A groove forming apparatus includes a laser light source configured to emit a laser beam, a multi-beam generator configured to split the laser beam into a plurality of sub-laser beams, a focusing lens unit configured to focus the plurality of sub-laser beams on a processing object, a first telecentric lens provided between the multi-beam generator and the focusing lens unit, and a second telecentric lens provided between the first telecentric lens and the focusing lens unit.
A disclosed laser processing method comprises the steps of: performing primary processing while positioning a processing beam having a first processing width smaller than a target width of a groove at a first position inside the target width and relatively moving the processing beam with respect to an object to be processed; and alternately performing a plurality of secondary processing and tertiary processing in which the processing is performed while sequentially positioning the processing beam at a plurality of second positions moved by a first step in a first direction with respect to the first position and at a plurality of third positions moved by a second step in an opposite direction of the second position with respect to the first position and relatively moving the processing beam in a second direction with respect to the object to be processed.
Disclosed are a laser annealing system and a method of fabricating a semiconductor device using the same. The laser annealing system having multiple laser devices may include a stage, on which a substrate is loaded, a light source generating a plurality of laser beams to be provided to the substrate, an optical delivery system disposed between the light source and the stage and used to deliver the laser beams, a homogenizing system disposed between the optical delivery system and the stage, the homogenizing system including an array lens including a plurality of lens cells which allow the laser beams to pass therethrough and homogenize the laser beams, and an imaging optical system disposed between the homogenizing system and the stage to image the laser beams on the substrate.
G02B 27/18 - Optical systems or apparatus not provided for by any of the groups , for optical projection, e.g. combination of mirror and condenser and objective
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
A laser processing apparatus includes a stage configured to support a substrate as a processing target and a reflective structure for measurement, a laser output portion configured to output a laser beam, a focusing lens configured to focus the laser beam on the substrate in a processing mode for processing the substrate and to focus the laser beam on the reflective structure in a measuring mode for measuring the laser beam, an aberration measuring optical system configured to receive a reflected light of the laser beam from the reflective structure through the focusing lens and to measure aberration of the laser beam, and an aberration corrector provided on an optical path of the laser beam incident from the laser output portion to the focusing lens and configured to correct the aberration of the laser beam based on the measured aberration information of the laser beam.
A wafer inspection system according to an embodiment includes: a first image sensor that is configured to inspect a wafer loaded on a stage and photographs one surface of the wafer a plurality of times; a second image sensor that photographs the opposite surface of the wafer a plurality of times; and a control unit that controls a time point at which the wafer is photographed, by applying a photographing signal to each of the first image sensor and the second image sensor, wherein each of the first image sensor and the second image sensor is relatively moved in a first direction with respect to the stage, and the relative movement may be continuously performed in a process in which each of the first image sensor and the second image sensor photographs the wafer a plurality of times.
Disclosed is a cleaning unit for a notching apparatus, which cleans a jig supporting an object to be processed in the notching apparatus. The cleaning unit disclosed herein may comprise: an outer brush configured to brush an outer surface of the jig, in which the outer surface supports the object to be processed; and an inner brush configured to brush an inner surface of the jig, which is opposite to the outer surface, and having a shape different from that of the outer brush.
B23K 26/16 - Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
B23K 37/04 - Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
The disclosed laser processing apparatus comprises: a beam splitter for splitting a laser beam from a light source into a first beam having a first polarization and a second beam having a second polarization; a beam converter for changing the beam mode of at least one of the first beam and the second beam; a beam combiner for overlapping the first and second beams on the same optical path; and a projection optical system for projecting the overlapped first and second beams onto an object being processed.
Disclosed is a method for dividing a processing target in which a pattern layer is disposed between a first wafer layer and a second wafer layer. The dividing method disclosed herein may comprise the steps of: forming a processing groove extending in the depth direction from one surface of the processing target to at least the pattern layer; forming a modified region inside the processing target by focusing a laser beam onto a position spaced apart from the other surface of the processing target; and applying an external force to the processing target and thereby forming a crack extending along the modified region.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 23/00 - Details of semiconductor or other solid state devices
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/38 - Removing material by boring or cutting
The disclosed method for dividing a processing object comprises the steps of: preparing a processing object including a substrate layer and at least one material layer formed on the upper surface of the substrate layer; shaping laser light into a processing beam; forming a recess to be cut that partially extends from the material layer to the inside of the substrate layer, while relatively moving the processing beam one or more times in the processing direction with respect to the processing object; and dividing the processing object along the recess to be cut. In at least one relative movement from among the one or more relative movements in the step of forming the recess to be cut, the processing beam has a Gaussian intensity profile, and the recess to be cut having a shape of which the width becomes narrower as the depth increases in a cross section orthogonal to the processing direction is formed in the processing object by the processing beam having the Gaussian intensity profile.
B23K 26/364 - Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
B23K 26/38 - Removing material by boring or cutting
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
The present invention relates to a laser processing method and to a laser processing method for processing a processing line of a substrate by using a laser processing apparatus comprising: a scanner for deflecting a laser beam; a scanning lens for forming a focal point of the laser beam on the substrate; and a stage on which the substrate is seated and moves. A scan field of the scanning lens is divided into a masking area that is not irradiated with the laser beam and an irradiation area which is disposed adjacent to the masking area and irradiated with the laser beam, and the scanner and the stage are driven in synchronization so that the processing line is processed while disposed in the irradiation area.
A support unit for supporting a workpiece in a notching apparatus is disclosed. The disclosed support unit comprises: a pair of support rollers which are spaced apart in the moving direction of a workpiece, and which are disposed to come into contact with the workpiece; and at least one guard part, which is disposed between the pair of support rollers so as to prevent foreign substances generated while a laser beam is emitted at the workpiece from becoming stuck to the pair of support rollers.
A method of operating an apparatus for laser annealing, includes reducing temporal or spatial coherency of a plurality of laser beams by beam superimposing; and reducing an electric field inner product magnitude of beams having the reduced temporal or spatial coherency by a fly eye lens array to reduce coherency, and/or by modifying a polarization state between the beams by beam superimposing.
G02B 27/14 - Beam splitting or combining systems operating by reflection only
G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
13.
VARIABLE-PULSE-WIDTH FLAT-TOP LASER DEVICE AND OPERATING METHOD THEREFOR
Provided are a variable pulse width flat-top laser device and an operation method therefor. A variable pulse width flat-top laser device includes a light source unit including first and second laser light sources driven at different times to respectively emit pulse-type first and second laser beams, a beam shaping unit configured to shape the first and second laser beams emitted from the light source unit into flat-top laser beams, a combination/split unit located between the light source unit and the beam shaping unit, and including a first beam combination/split unit configured to combine optical paths of the first and second laser beams and split a combined optical path into at least two optical paths so that the split at least two optical paths are directed to different regions of an incident surface of the beam shaping unit, and an imaging optical system configured to time-sequentially overlay the flat-top laser beams shaped by the beam shaping unit on a target object to form an image.
A laser processing apparatus is disclosed. The disclosed laser processing apparatus comprises: a laser device; a chuck table comprising a first surface, which comprises a curved surface and is a surface on which a workpiece is placed, and a second surface which is at the opposite side to the first surface; a suction unit for adhering the workpiece to the first surface of the chuck table; and a focusing optical system for focusing a pulsed laser beam, provided from the laser device, into the interior of the workpiece placed on the chuck table. The laser device generates a pulsed laser beam, each pulse having a waveform in which, with respect to the peak of the laser beam, the front slope is gentle, and the rear slope is steeper than the front slope.
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 37/04 - Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
B23Q 17/24 - Arrangements for indicating or measuring on machine tools using optics
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A laser device and a laser processing device including same are disclosed. The laser device disclosed herein comprises: a pulse beam generation unit for generating a shaped pulse laser beam; a first optical amplification unit for amplifying the pulse laser beam generated by the pulse beam generation unit; and a control unit for controlling the pulse beam generation unit to generate a shaped pulse laser beam having a shape in which the slope before a peak value of the pulse laser beam is gentle and the slope after the peak value is steeper than the slope before the peak value.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION (Republic of Korea)
Inventor
Lee, Hee Chul
Lee, Hong Seok
Kang, Yoon Shik
Wi, Seong Man
Abstract
Provided are an illumination optical system and a method of forming a laser beam using the same. The illumination optical system comprises a lens array unit configured to receive a plurality of laser beams provided from one side, a spatial light modulator configured to control phases of the plurality of laser beams passing through the lens array unit, and a condensing lens configured to overlap the plurality of laser beams passing through the spatial light modulator to form a flat-top beam, wherein the plurality of laser beams includes a first laser beam and a second laser beam passing through two adjacent lenses, and wherein the spatial light modulator is configured to control the first laser beam and the second laser beam to have different phases.
A laser processing apparatus is disclosed. Disclosed is the laser processing apparatus comprising: a laser light source for generating laser light; a spatial light modulator for forming a processing modulation pattern by modulating the laser light provided by the laser light source; a condensing optical system for condensing, onto an object to be processed, the laser light modulated by the spatial light modulator; a relay lens optical system positioned between the spatial light modulator and the condensing optical system; and a control unit for controlling the spatial light modulator such that the laser light is modulated according to the processing modulation pattern. The relay lens optical system transfers an image of the processing modulation pattern formed by the spatial light modulator to the incident side of the condensing optical system, and includes a first lens group, a second lens group and a field lens between the first lens group and the second lens group.
Disclosed is a laser processing apparatus for processing an electrode. The laser processing apparatus comprises: a first laser source that outputs a first laser beam for preheating an edge region of an active material layer of an electrode; a second laser source that outputs a second laser beam for etching the edge region; and a controller that controls the first laser source and the second laser source, wherein an irradiation region of the first laser beam is larger than an irradiation region of the second laser beam.
A laser processing apparatus is provided. The laser processing apparatus includes a light source unit configured to emit a first laser beam and a second laser beam, a beam shaping unit configured to generate a processing beam from the first laser beam and the second laser beam based on an operation mode of the laser processing apparatus, and a beam measurement unit configured to measure a waveform of at least one laser beam, wherein, when the operation mode is a processing mode, the first laser beam and the second laser beam overlap each other, and the beam measurement unit measures a waveform of the processing beam, and when the operation mode is a test mode, the first laser beam and the second laser beam do not overlap each other, and the beam measurement unit measures waveforms of the first laser beam and the second laser beam.
A groove forming apparatus includes a laser light source configured to emit a laser beam, a multi-beam generator configured to split the laser beam into a plurality of sub-laser beams, a focusing lens unit configured to focus the plurality of sub-laser beams on a processing object, a first telecentric lens provided between the multi-beam generator and the focusing lens unit, and a second telecentric lens provided between the first telecentric lens and the focusing lens unit.
An optical amplifier is disclosed. The optical amplifier includes: a gain medium which has a first surface on which a seed beam is incident, a second surface positioned opposite to the first surface, and a side surface connecting the first surface and the second surface, and in which the incident seed beam is amplified while moving to the second surface and emitted to the second surface; and a pumping source providing a pump beam to at least one of the first surface or the second surface, wherein a pump beam removal region is provided in one region of the side surface of the gain medium, the pump beam removal region being surface-treated so that at least a portion of the pump beam existing inside the gain medium is emitted to the outside of the gain medium, and the pump beam removal region is located closer to the first surface than a region in which the pump beam is first reflected from the side surface of the gain medium.
H01S 3/06 - Construction or shape of active medium
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 3/042 - Arrangements for thermal management for solid state lasers
H01S 3/13 - Stabilisation of laser output parameters, e.g. frequency or amplitude
A laser device according to various embodiments may comprise: a housing; an inlet valve that is disposed in a first direction of the housing and configured to receive cooling water; an outlet valve that is disposed in a second direction of the housing and configured to discharge the cooling water; a laser output unit that is accommodated in the housing and configured to receive power and output a laser beam; and a cooling structure for cooling the laser output unit. The cooling structure may include: a support member for accommodating the laser output unit therein; and a flow path that is formed to go from the surface of the support member toward the inside of the support member and is for providing a path through which the cooling water flows.
A laser processing device is disclosed. The laser processing device comprises: a light source that provides a laser beam; a beam expander comprising a birefringent material that double-refracts the laser beam to form a first laser beam polarized from the laser beam in a first direction and a second laser beam polarized in a second direction perpendicular to the first direction; a focusing lens for imaging the first laser beam and the second laser beam on an object to be processed, wherein focuses of the first laser beam and the second laser beam are formed at different depths from a surface of the object to be processed.
Provided is a laser device. A laser device includes a light source unit configured to emit a first laser beam and a second laser beam, and a beam shaping unit configured to receive the first laser beam and the second laser beam on an incident surface and to shape the first laser beam and the second laser beam into a first processing beam, wherein the beam shaping unit is further configured, to have the incident surface including four quadrants, to receive the first laser beam on a first quadrant and the second laser beam on a second quadrant, and to shape the first laser beam and the second laser beam being emitted at different timing from the first laser beam into the first processing beam.
An electrode manufacturing device is disclosed. The electrode manufacturing device includes a transfer unit configured to transfer an electrode, a laser output unit configured to emit a laser beam to the electrode, a guide unit including a first surface and a second surface for guiding the electrode so that the electrode is transferred along a preset path while the laser beam is emitted, and a cleaning unit disposed adjacent to the guide unit, and configured to remove dust deposited on the guide unit, wherein the guide unit rotates between a first state and a second state, in the first state, the first surface is disposed to guide the electrode and the second surface is disposed to be cleaned by the cleaning unit, and in the second state, the first surface is disposed to be cleaned by the cleaning unit and the second surface is disposed to guide the electrode.
H01M 10/04 - Construction or manufacture in general
B23K 26/38 - Removing material by boring or cutting
B23K 26/142 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor for the removal of by-products
Various embodiments of the present disclosure relate to a rework device and a method for controlling same, the rework device enabling uniform radiant heating, by a laser source, of only a target part seated at a predetermined position on a printed circuit board. To this end, in the rework device, a uniformizing filter may be stacked on the target part, which has been mounted at a rework position provided on the printed circuit board, and thus mounted thereto. A laser generated by a light source part is provided to the target part to which the uniformizing filter has been mounted, and an opening may be provided through a blocking mask to prevent the periphery of the target part from being exposed.
B23K 26/57 - Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
B23K 37/04 - Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
H01L 23/00 - Details of semiconductor or other solid state devices
A groove forming apparatus comprises: a laser light source which emits a laser beam; a multi-beam generator which splits the laser beam into a plurality of sub-laser beams; a focusing lens unit which condenses the plurality of sub-laser beams; a first telecentric lens provided between the multi-beam generator and the focusing lens unit; and a second telecentric lens provided between the first telecentric lens and the focusing lens unit.
Provided are a variable pulse width flat-top laser device and an operation method therefor. A variable pulse width flat-top laser device includes a light source unit including first and second laser light sources driven at different times to respectively emit pulse-type first and second laser beams, a beam shaping unit configured to shape the first and second laser beams emitted from the light source unit into flat-top laser beams, a combination/split unit located between the light source unit and the beam shaping unit, and including a first beam combination/split unit configured to combine optical paths of the first and second laser beams and split a combined optical path into at least two optical paths so that the split at least two optical paths are directed to different regions of an incident surface of the beam shaping unit, and an imaging optical system configured to time-sequentially overlay the flat-top laser beams shaped by the beam shaping unit on a target object to form an image.
A method of operating an apparatus for laser annealing, includes reducing temporal or spatial coherency of a plurality of laser beams by beam superimposing; and reducing an electric field inner product magnitude of beams having the reduced temporal or spatial coherency by a fly eye lens array to reduce coherency, and/or by modifying a polarization state between the beams by beam superimposing.
G02B 27/14 - Beam splitting or combining systems operating by reflection only
G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising
B23K 103/00 - Materials to be soldered, welded or cut
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An electrode manufacturing device for manufacturing an electrode includes: a first support unit having a plate shape extending along a plane and injecting a first pressurized fluid in a 1st-1st direction perpendicular to the plane; a second support unit having a plate shape extending along one plane, disposed to face the first support unit at a certain distance, and injecting a second pressurized fluid in a 1st-2nd direction opposite to the 1st-1st direction; a transfer unit configured to transfer an electrode having a sheet-shape in a direction of gravity and dispose a first area of the electrode between the first support unit and the second support unit; and a laser beam notching unit configured to notch and cut a portion of a second area of the electrode by irradiating a laser beam to the electrode in the 1st-1st direction.
B23K 26/38 - Removing material by boring or cutting
B08B 5/04 - Cleaning by suction, with or without auxiliary action
H01M 50/533 - Electrode connections inside a battery casing characterised by the shape of the leads or tabs
B23K 26/142 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor for the removal of by-products
B23K 26/14 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor
B23K 37/04 - Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
A hole formation device comprises: a laser light source; an acousto-optic modulator for controlling the processing path of a laser beam provided from the laser light source; and a scan head for emitting, at an object to be processed, the laser beam provided from the acousto-optic modulator, wherein: the acousto-optic modulator controls the processing path of the laser beam so that the laser beam is emitted at the object to be processed along a first loop processing path so as to form a first trench in the object to be processed, and so that the laser beam is emitted at the object to be processed along a second loop processing path so as to form a second trench in the object to be processed; and the second trench is provided to be spaced from the first trench in an area surrounded by the first trench.
B23K 26/382 - Removing material by boring or cutting by boring
B23K 26/082 - Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
H01S 5/30 - Structure or shape of the active regionMaterials used for the active region
H01S 3/101 - Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted
G02F 1/11 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
32.
VARIABLE-PULSE-WIDTH FLAT-TOP LASER DEVICE AND OPERATING METHOD THEREFOR
A variable-pulse-width flat-top laser device and an operating method therefor are disclosed. The disclosed variable-pulse-width flat-top laser device comprises: a light source unit including first and second laser light sources driven at different times so as to respectively emit pulse-type first and second laser beams, respectively; a beam shaping unit for shaping, into flat-top laser beams, the first and second laser beams emitted from the light source unit; a combination/branching unit arranged between the light source unit and the beam shaping unit so as to include a first beam combination/split unit, which combines the optical paths of the first and second laser beams and splits the combined optical path into at least two optical paths so that the split at least two optical paths are directed to different regions of the incident surface of the beam shaping unit; and an imaging optical system for sequentially overlaying the flat-top laser beams shaped by the beam shaping unit on an object and forming an image.
B23K 26/067 - Dividing the beam into multiple beams, e.g. multi-focusing
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
33.
Laser annealing system and method of fabricating a semiconductor device using the same
Disclosed are a laser annealing system and a method of fabricating a semiconductor device using the same. The laser annealing system having multiple laser devices may include a stage, on which a substrate is loaded, a light source generating a plurality of laser beams to be provided to the substrate, an optical delivery system disposed between the light source and the stage and used to deliver the laser beams, a homogenizing system disposed between the optical delivery system and the stage, the homogenizing system including an array lens including a plurality of lens cells which allow the laser beams to pass therethrough and homogenize the laser beams, and an imaging optical system disposed between the homogenizing system and the stage to image the laser beams on the substrate.
G02B 27/18 - Optical systems or apparatus not provided for by any of the groups , for optical projection, e.g. combination of mirror and condenser and objective
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
A laser marking device includes a laser emission unit configured to emit a laser beam to a first surface of an object to be processed, and a pressing unit configured to press a second surface that is opposite to the first surface of the object to be processed to make the first surface of the object to be flat. The pressing unit includes a first pressing portion configured to press an edge area of the second surface in a contact manner, and at least one second pressing portion configured to press a middle area of the second surface in a non-contact manner to maintain a separation distance from the second surface within a certain distance.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
A laser marking device includes a laser emission unit configured to emit a laser beam to a first surface of an object to be processed, and a pressing unit configured to press a second surface that is opposite to the first surface of the object to be processed to make the first surface of the object to be flat. The pressing unit includes a first pressing portion configured to press an edge area of the second surface in a contact manner, and at least one second pressing portion configured to press a middle area of the second surface in a non-contact manner to maintain a separation distance from the second surface within a certain distance.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
36.
Warpage reduction device and warpage reduction method
A warpage reduction device the present disclosure includes a jig having a warped shape capable of distributing stress of a workpiece, a light source heating the workpiece so as to be flat, a pressurizer applying pressure to the heated workpiece to be pressed against the jig so as to be deformed, a cooler cooling the deformed workpiece, and a controller controlling operations of the light source, the pressurizer, and the cooler.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B29C 51/10 - Forming by pressure difference, e.g. vacuum
Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.
G01N 21/25 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B23K 26/354 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
B23K 26/03 - Observing, e.g. monitoring, the workpiece
Provided is an apparatus and method for correcting a marking position, in which, by measuring and correcting a marking position by using a processing film for position correction, marking may be accurately performed on a position on a semiconductor chip during a marking operation, before a marking operation is performed on semiconductor chips provided on a wafer. The apparatus for correcting a marking position of a wafer includes a support configured to support a processing film for position correction, a laser head configured to emit a laser beam to the processing film for position correction to form a pattern, a vision camera configured to obtain pattern position information, a movable table configured to move the support in a horizontal direction, and a controller configured to compare and match the pattern position information and marking position information set in the laser head.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
39.
LASER PROCESSING DEVICE INCLUDING ANGLE CONTROL OPTICAL SYSTEM
A laser processing device according to the present disclosure comprises: a light source for emitting a laser beam; an optical modulator for controlling, within the swing angle thereof, an angle at which the laser beam travels; a 4F angle control optical system for changing the swing angle of the optical modulator; and a flying head for processing an object to be processed, by using a laser beam transmitted from the 4F angle control optical system.
B23K 26/064 - Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
B23K 26/066 - Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
Disclosed is a high-power light source device having a compact structure in which laser beams emitted from a plurality of laser light sources are efficiently combined. The disclosed light source device includes: a first row of laser light sources and a second row of laser light sources, which are disposed to face each other; a third row of reflective mirrors disposed on the outside of the second row of laser light sources; a fourth row of reflective mirrors disposed on the outside of the first row of laser light sources; and a beam combiner, wherein the first row of laser light sources and the second row of laser light sources are alternately disposed, the first row of laser light sources are provided so as to have a stepped portion therebetween, and the second row of laser light sources are provided so as to have a stepped portion therebetween.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising
A warpage reduction device according to the present disclosure comprises: a jig having a curved shape capable of distributing stress in a material; a light source for heating the material so as to flatten the same; a pressurizer for applying pressure to the heated material so as to press the heated material against the jig and thus deform the same; a cooler for cooling the deformed material; and a control unit for controlling operations of the light source, the pressurizer, and the cooler.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/00 - Details of semiconductor or other solid state devices
42.
Laser processing device and laser processing method
The laser processing device includes: a measuring device configured to measure a change in a height of an object and including a first light source configured to emit probe light, a first light focusing unit configured to focus the probe light on the object, a light sensing unit configured to detect a change in the probe light reflected from a reflective surface of the object and including a Shack-Hartmann sensor, and a calculation unit configured to calculate the change in the height of the object by using the change in the reflected light detected by the light sensing unit; a second light source configured to emit laser light for processing to the object; and a focus adjusting device configured to adjust a focus of the laser light emitted to the object by using the change in the height of the object to be processed measured by the measuring device.
G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
B23K 26/046 - Automatically focusing the laser beam
B23K 26/02 - Positioning or observing the workpiece, e.g. with respect to the point of impactAligning, aiming or focusing the laser beam
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 26/04 - Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 27/14 - Beam splitting or combining systems operating by reflection only
G02B 7/28 - Systems for automatic generation of focusing signals
A laser amplification device is disclosed. The disclosed laser amplification device comprises a seed beam light source for supplying a seed beam and a solid amplifier for amplifying the output of the seed beam, wherein the solid amplifier comprises: a laser medium; a pumping beam light source for supplying a pumping beam exciting the laser medium; a pumping beam mirror for reflecting, to the laser medium again, the pumping beam having passed through the laser medium; a plurality of dichroic mirrors for reflecting the seed beam such that the seed beam passes through the laser medium by the same path as the pumping path of the pumping beam; and a plurality of mirrors arranged on the optical path of the seed beam.
H01S 3/08 - Construction or shape of optical resonators or components thereof
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
G02B 27/14 - Beam splitting or combining systems operating by reflection only
Provided is an adhesive removing device for removing an adhesive for adhering a mask and a pellicle from the mask. The adhesive removing device includes: a laser irradiating unit configured to irradiate a laser beam to an adhesive layer formed between the mask and the pellicle; a controller configured to control a wavelength, a waveform, and an energy density of the laser beam, so as to remove the adhesive layer through emission of the laser beam; and an imaging unit configured to monitor a region to which the laser beam is irradiated.
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
45.
LASER PROCESSING SYSTEM AND LASER PROCESSING METHOD
Disclosed is a laser processing method. The disclosed laser processing method simultaneously enables height measurement and laser processing of an object to be processed, by using a height measurement unit and a laser irradiation unit which are arranged in the direction of processing.
Provided is an automatic inspection device and method for inspecting processing quality of laser processing equipment that forms a modified area by irradiating a laser beam into an object to be processed. The automatic inspection device includes: an image film coated on a bottom surface of the object to be processed; an image sensing unit configured to detect a damage image of the object to be processed formed on the image film through irradiation of the laser beam; and an image processing unit configured to process the damage image detected by the image sensing unit.
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B23K 31/12 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups relating to investigating the properties, e.g. the weldability, of materials
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/082 - Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/66 - Testing or measuring during manufacture or treatment
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/064 - Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
B23K 26/03 - Observing, e.g. monitoring, the workpiece
The present invention relates to an optical coupler and, according to one embodiment, the optical coupler can comprise: a first ferrule which is a hollow tubular member extending along one direction and which has one end portion to which a first optical fiber is connected; a first lens arranged so as to be spaced from the other end portion of the first ferrule at predetermined intervals; a second ferrule which is a hollow tubular member extending along one direction and which has one end portion to which a second optical fiber is connected; and a second lens arranged so as to be spaced from the other end portion of the second ferrule at predetermined intervals.
A thin disk laser device is disclosed. The disclosed thin disk laser device comprises: a first parabolic reflector and a second parabolic reflector which face each other and are arranged in the same axis; a first thin disk and a second thin disk which respectively have a laser medium and a reflective surface and are respectively arranged at peaks of the first parabolic reflector and the second parabolic reflector so as to form a multi-path of pumping light together with the first parabolic reflector and the second parabolic reflector; a first inner mirror and a second inner mirror which are arranged in a space between the first parabolic reflector and the second parabolic reflector and reflect signal light; and a plurality of mirrors arranged on a light path of the signal light between the first inner mirror and the second inner mirror, wherein the first inner mirror, the second inner mirror and the plurality of mirrors amplify the signal light by repeating the reflection of the signal light between the first thin disk and the second thin disk.
H01S 3/06 - Construction or shape of active medium
H01S 3/105 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
49.
MASK CLEANING APPARATUS AND LASER ANNEALING APPARATUS
A mask cleaning apparatus is disclosed. The disclosed mask cleaning apparatus comprises: a laser source for generating a laser beam; and a laser emitting unit for emitting a laser beam at an adhesive on a photomask, wherein the laser emitting unit includes: a rotational driving unit for providing a rotational driving force; and a rotating optical system disposed on a moving path of the laser beam, rotated by the rotational driving unit, and moving, by the rotation, the location of the laser beam emitted at the adhesive on the photomask so as to compensate for a spatial energy variation of the laser beam.
The present invention relates to an object alignment method using an imaging device and an imaging method. According to an imaging method, a clear image can be obtained by performing auto-focusing in an imaging process using a reference table in which chuck thickness values measured at a plurality of sampling points are stored. In addition, objects can be aligned using images obtained from an imaging device.
The present invention relates to a marking position correcting device and a marking position correcting method wherein, before semiconductor chips provided on a wafer are subjected to a marking process, marked positions are measured and corrected using a screen formed on a surface of a transparent substrate such that markings can be made in correct positions on the semiconductor chip. In addition, the position in which a laser beam is detected and the position of a marking point formed on the screen by the laser beam may differ from each other due to the refractive index of the transparent substrate, but the refractive index of the transparent substrate is compensated for, according to the present invention, when calculating the position of the marking point, thereby making the correction of the marking position accurate. A marking position correcting device according to an embodiment of the present invention is a marking position correcting device for correcting the marking position on a wafer, comprising: a position correcting member comprising a transparent substrate and a screen provided on the transparent screen; a laser head for emitting a laser beam to the screen and forming a marking point; a vision camera for acquiring information regarding the position of a detection point formed as the laser beam passes through the screen and the transparent substrate; a calculation unit for calculating information regarding the position of the marking point using the information regarding the position of the detection point acquired by the vision camera; and a control unit for comparing and matching the information regarding the position of the marking point and information regarding the marking position set on the laser head.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
According to exemplary embodiments, a laser device and a laser generation method are provided. The laser device according to an embodiment generates a trigger signal from a laser modulation signal. In addition, the laser device emits pumping light at a gain medium by synchronizing an optical pumping device by means of the trigger signal.
H01S 3/0933 - Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/062 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
Disclosed is an apparatus and method for measuring straightness. The disclosed method for measuring straightness comprises the steps of: acquiring photographed images by photographing a reference line marked on an object while changing a photographing position along a processing direction of the object; and measuring straightness in the processing direction from positions of the reference line appearing in the photographed images, wherein, in the step of acquiring the photographed images, the line width of the reference line appearing in the photographed images is smaller than the resolution of a photographing unit.
G01B 11/04 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness specially adapted for measuring length or width of objects while moving
G01B 11/10 - Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23Q 17/24 - Arrangements for indicating or measuring on machine tools using optics
A laser marking device is disclosed. The disclosed laser marking device comprises: a laser emission unit for emitting a laser beam at a first surface of an object to be processed; and a pressing unit for pressing a second surface which is a surface opposite to the first surface of the object to be processed so as to planarize the first surface of the object to be processed, wherein the pressing unit comprises: a first pressing part for pressing, by a contact method, an edge region of the second surface; and at least one second pressing part for pressing, by a contactless method, a center region of the second surface such that a spacing distance from the second surface is maintained to be within a predetermined distance.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a marking position correcting apparatus and a marking position correcting method, which are capable of marking at a correct position on semiconductor chips during a marking operation, by measuring and correcting a position to be marked using a processing film for position correction before performing the marking operation on the semiconductor chips provided on a wafer. A marking position correcting apparatus according to one embodiment of the present invention relates to a marking position correcting apparatus for correcting a marking position of a wafer, comprising: a support for supporting a processing film for position correction; a laser head for irradiating a laser beam onto the processing film for position correction to form a pattern; a vision camera for obtaining position information of the pattern; a moving table for moving the support in a horizontal direction; and a control unit for comparing and matching the position information of the pattern with marking position information set in the laser head.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
56.
LASER DEFLASHING METHOD, AND LASER PROCESSING METHOD AND DEVICE USING SAME
Disclosed are a laser deflashing method, and laser processing method and device using same. The laser deflashing method, which is for removing metal particles and/or a heat-affected zone generated on the periphery of a cutting line of a metal material, comprises the steps of: forming an oil pattern on a cutting area of a metal material; and cutting the metal material, by means of radiating a first laser beam on the cutting area on which the oil pattern is formed, and then removing a heat-affected zone and/or metal particles by means of radiating a second laser beam on the periphery of a cutting line of the metal material.
Disclosed are a laser pulse control apparatus and a laser pulse control method. The disclosed laser pulse control apparatus comprises: a pulse laser generator for generating a plurality of laser pluses at regular time intervals; an optical modulator which is driven so as to selectively extract some of the laser pulses; a control unit for controlling the driving of the optical modulator by changing an electrical signal applied to the optical modulator over time; and an optical amplifier for amplifying the extracted laser pulses.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 3/107 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
H01S 3/106 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
58.
ULTRASONIC CLEANING DEVICE AND ULTRASONIC CLEANING METHOD USING SAME
Disclosed is an ultrasonic cleaning device for cleaning a surface of a processing material with ultrasonic waves, and an ultrasonic cleaning method using the same. The disclosed ultrasonic cleaning device comprises: a first cleaning unit movably provided in a vertical direction and a horizontal direction and including an upper ultrasonic generator for emitting ultrasonic waves toward an upper surface of the processing material; and a second cleaning unit in which the processing object is provided during the cleaning processes and which includes a lower ultrasonic generator emitting ultrasonic waves toward a lower surface of the processing material.
B08B 7/02 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
Disclosed are a laser soldering repairing process, a laser soldering process and a laser soldering system. The laser soldering repairing process is a repairing process performed, by means of a laser, on a repair area on which a soldering process has not been performed of a solder area on a substrate. The laser soldering repairing process comprises the steps of: performing laser cleaning by means of radiating a cleaning laser beam on a repair area of a substrate; preparing a solder ball on the cleaned repair area of the substrate; and radiating a soldering laser beam on the solder ball and thus heating the solder ball and attaching same to the repair area.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A photographing apparatus is disclosed. The disclosed photographing apparatus comprises: a light source for irradiating light; a focusing optical system for changing a path of light reflected from an object; a photographing unit for photographing an image of the object formed by the focusing optical system; and a distance adjusting unit for adjusting a distance between the focusing optical system and the object. The photographing unit photographs the image of the object every time the distance between the focusing optical system and the object changes by a predetermined distance, wherein the predetermined distance is set to be smaller than a depth of field of the focusing optical system.
Disclosed are a laser processing apparatus and a laser processing method. The disclosed laser processing apparatus time-divides a pulse laser beam into a plurality of processing beams by means of an acousto-optic modulation unit. The laser processing apparatus forms a processing pattern by irradiating the plurality of processing beams to different positions.
A laser processing system is disclosed. The disclosed laser processing system comprises: a detection unit for detecting a thickness of a workpiece in an optical manner; a laser irradiation unit for irradiating a laser beam onto the workpiece on the basis of the thickness detected by the detection unit; and a cooling unit configured to cool the detection unit.
The present invention relates to a wafer alignment apparatus for aligning a wafer of which the central part and the peripheral part are different in thickness, and a wafer transfer apparatus. A wafer alignment apparatus according to one embodiment of the present application may comprise: a housing; a wafer chuck which is arranged on the upper part of the housing and supports a wafer of which the central part and the peripheral part are different in thickness; and a rotation apparatus for rotating the wafer chuck with respect to one axis.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
The present invention relates to a wafer cleaning apparatus. The wafer cleaning apparatus, according to one embodiment of the present inention, comprises: a housing having a cylindrical shape of which the upper surface is open; a wafer chuck, arranged inside the housing, for supporting a wafer; a cleansing solution spraying device for spraying a cleansing fluid on the wafer; and a spraying portion, which is arranged on the upper surface of the housing, for spraying a gas having a specific flow velocity while maintaining a specific spray angle with the upper surface.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
65.
LASER PROCESSING METHOD USING INCLINATION ANGLE OF LASER BEAM
Disclosed is a laser processing method using the inclination angle of a laser beam. The disclosed laser processing method is to remove an edge portion of a workpiece loaded on a stage by irradiating the laser beam to the edge portion. The method comprises the steps of: passing the laser beam through a focusing lens; and irradiating the edge of the workpiece with a tilted beam including an outer surface inclined with respect to the central axis of the focusing lens among the laser beams having passed through the focusing lens. The edge portion of the workpiece is processed to be oblique so as to correspond to the outer surface of the inclined beam.
Disclosed is a wafer marking method using a laser for marking a wafer having processing tape attached thereto. The disclosed laser marking method comprises the steps of: penetrating a 532-nm wavelength laser beam through the processing tape attached to one side of the wafer; and performing marking on the one side of the wafer by moving the 532-nm wavelength laser beam at a predetermined velocity, wherein the 532-nm wavelength laser beam has a frequency of 8 kHz to 40 kHz, and an output power of 0.8 W to 2 W.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
C03C 23/00 - Other surface treatment of glass not in the form of fibres or filaments
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/18 - Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
B23K 26/082 - Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
B23K 26/352 - Working by laser beam, e.g. welding, cutting or boring for surface treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A lens optical system and a laser processing apparatus comprising the same are disclosed. The disclosed lens optical system comprises: a body part including a first surface on which light is incident and a second flat surface opposite to the first surface; a circular lens part provided at the center of the second surface; and at least one annular lens part provided on the first surface so as to surround the circular lens part. Here, the circular lens part and the at least one annular lens part may have different radii of curvature, thereby forming a plurality of light-converging points spaced apart from each other along a traveling direction of the light.
A laser processing apparatus, according to one embodiment of the present invention, comprises: a first laser emission unit; and a cooling head having a plurality of nozzle units for discharging a cooling fluid such that the cooling fluid is injected so as to surround an emission area of a laser beam formed by the first laser emission unit.
B23Q 11/00 - Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling workSafety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
Disclosed is a method for marking, by using a laser marker, a plurality of wafer dice divided by a wafer dicing process. The disclosed marking method for wafer dice comprises the steps of: setting a plurality of scan regions having a mutually overlapping portion on a wafer including the wafer dice; scanning the scan regions of the wafer a plurality of times by using a line scan camera; collecting position information of each of wafer dice located in regions in which the scan regions do not overlap; collecting, through image synthesis, position information of each of wafer dice located in regions in which the scan regions overlap; and marking, by using the laser marker, each of all the wafer dice of which the position information has been collected.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
B23K 26/03 - Observing, e.g. monitoring, the workpiece
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
The present invention relates to a wafer alignment method and alignment equipment using the same, the method comprising the steps of: loading a wafer, including a notch for alignment, on a stage of which the X axis and the Y axis are set; capturing a first image of the wafer, then rotating the wafer 180 degrees, and then capturing a second image of the wafer; comparing the first image and the second image so as to move the center of the wafer on the X axis of the stage; capturing a third image of the wafer, then rotating the wafer 180 degrees, and then capturing a fourth image of the wafer; comparing the third image and the fourth image so as to move the center of the wafer on the Y axis of the stage such that the center of the wafer coincides with the center of the stage; and rotating the wafer so as to allow a center line of the wafer passing through the notch to coincide with an alignment line of the stage.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
71.
LASER MARKING DEVICE AND LASER MARKING METHOD USING SAME
The present invention relates to a laser marking device and a laser marking method using same, which can prevent warpage that can occur in a wafer, through a vacuum plate on which the wafer is seated and a pressing member that applies pressure to the edge portion of the wafer. Also, by only moving the wafer vertically, wafer movement can be minimized, and expedient and accurate marking work can be executed without having to re-check the position of a semiconductor chip. A laser marking device according to an embodiment of the present invention, which is a laser marking device that uses a laser beam to execute marking work on semiconductor chips provided on a wafer, comprises: a laser head for emitting the laser beam; a stage on which the wafer is seated, and which includes an opening through which the laser beam passes and is irradiated on the semiconductor chips; a wafer support for supporting a portion of the wafer and enabling the wafer to move in a vertical direction with respect to the stage; and rotating means for rotating the stage.
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
An embodiment of the present invention provides a photo-mask repair system and method for repairing a photo-mask, which is used in a semiconductor process, through dissociation of gas using a laser beam when the photo-mask is required to be repaired. The disclosed photo-mask repair system comprises: a chamber in which a photo-mask to be repaired is placed; a vacuum device for maintaining the interior of the chamber in a vacuum state; a gas supply unit for supplying an etching gas and a passivation gas into the chamber; and a laser device disposed within the chamber and dissociating the etching gas within the chamber by applying a laser beam to a portion of the photo-mask to be repaired, wherein the passivation gas is adsorbed onto the portion of the photo-mask to be repaired to uniformly etch the same.
A laser processing method and a laser processing device, which use multiple focuses, are disclosed. The disclosed laser processing method processes, using a laser, an object to be processed, which is loaded on a stage, and comprises the steps of: splitting a laser beam into a plurality of laser beams; emitting the plurality of split laser beams at the object to be processed, so as to respectively form focusing points at different depths; and processing the object to be processed by relatively moving, with respect to the stage, the laser beams along a line scheduled to be processed, wherein a focusing point formed at a deeper position from the surface of the object to be processed, on which the laser beams are incident, is formed more toward the moving direction of the laser beams than a focusing point formed at a shallower position in the line scheduled to be processed.
Disclosed are a device and a method for inspecting a processing quality of a laser processing equipment which forms a modified area by irradiating a laser beam into an object to be processed. The disclosed automatic inspection device comprises: an image film coated on the bottom surface of the object to be processed; an image detection unit for detecting a damaged image of the object to be processed, which has been formed on the image film by irradiating the laser beam; and an image processing unit for processing the damaged image detected by the image detection unit.
Disclosed are a device and method for aligning a laser optical system constituting a laser processing apparatus. The disclosed optical system aligning device for a laser processing apparatus comprises: a laser optical system through which a laser beam passes; a Shack-Hartmann sensor for measuring a light wavefront of the laser beam emitted from the laser optical system; and a computing unit for expressing the light wavefront of the laser beam detected by the Shack-Hartmann sensor in an equation, and calculating an eccentric value for the laser optical system, which arises when the laser optical system becomes misaligned.
A laser processing system is disclosed. The disclosed laser processing system comprises: a laser emission unit for emitting a laser beam; a chamber unit in which an object to be processed can be accommodated and through which the laser beam penetrates from the outside so as to be emitted at the object to be processed; and a frequency conversion unit disposed between the chamber unit and the laser emission unit, enabled to be rotated, and having a rotary plate, which has at least one slit.
A laser processing device according to one embodiment of the present invention can comprise: a laser emission unit emitting a laser beam so as to form a processing groove on a wafer; a wafer chuck on which the wafer is loaded, and which moves along a first axial direction; a cam disposed so as to be fixed to the wafer chuck; a cam guide formed to extend along the first axial direction, and making contact with the cam so as to guide a movement path of the wafer chuck; a first slide guide extending along the first axial direction and guiding the movement path of the wafer chuck; and a sensor unit for sensing the movement of the first slide guide in a second axial direction orthogonal to the first axial direction.
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/76 - Making of isolation regions between components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/66 - Testing or measuring during manufacture or treatment
78.
LASER MARKING SYSTEM AND LASER MARKING METHOD USING SAME
Disclosed are a laser marking system and a laser marking method. The disclosed laser marking system comprises: a laser oscillator; a beam splitter for dividing a laser beam emitted from the laser oscillator into first and second marking laser beams; first and second beam control units, which are disposed in movement paths of the first and second marking laser beams and have refractive indices changing according to changes in voltages applied thereto, so as to control characteristics of the first and second marking laser beams; and first and second Galvano scanners for controlling directions of the first and second marking laser beams which have passed through the first and second beam control units.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/067 - Dividing the beam into multiple beams, e.g. multi-focusing
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
B23K 103/00 - Materials to be soldered, welded or cut
79.
Laser processing method for cutting semiconductor wafer having metal layer formed thereon and laser processing device
Disclosed are a laser processing method for cutting a semiconductor wafer having a metal layer formed thereon and a laser processing device. The disclosed laser processing method transmits a plurality of laser beams, which propagate coaxially, to the semiconductor wafer, thereby forming focusing points in positions adjacent to a surface of the metal layer, which constitutes a boundary with the semiconductor wafer, and to one surface of the semiconductor wafer, respectively.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/50 - Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups or
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
80.
DEVICE AND METHOD FOR MEASURING CHANGE IN THICKNESS OR HEIGHT OF OBJECT
Disclosed are a device and a method for measuring a change in the thickness or the height of an object, the device being provided on the upper part of the object. The disclosed measuring device comprises: a light source which emits a probe light; a light focusing unit which focuses the probe light and irradiates same on an object; a light sensing unit which comprises a Shack-Hartmann sensor and detects a change in a reflected light coming from a reflective surface of the object; and a calculation unit which calculates a change in the height of the reflective surface by using the change in the reflected light detected by the light sensing unit.
Disclosed are a laser processing device and a laser processing method. The disclosed laser processing device comprises: a measuring device which measures a change in the height of a subject to be processed, and comprises a first light source, a first light focusing unit, a light sensing unit and a calculation unit, the first light source emitting a probe light for measurement, the first light focusing unit focusing the probe light and irradiating same on the subject to be processed, the light sensing unit comprising a Shack-Hartmann sensor and detecting a change in a reflected light which is the probe light being reflected from a reflective surface of the subject to be processed, and the calculation unit calculating a change in the height of the subject to be processed by using the change in the reflected light detected by the light sensing unit; a second light source which emits, on the subject to be processed, a laser light for processing; and a focus adjusting device which adjusts the focus of the laser light irradiated on the subject to be processed by using the change in the height of the subject to be processed measured by the measuring device.
A device for removing an adhesive for adhering a mask and a pellicle from the mask is disclosed. The disclosed adhesive removing device comprises: a laser emitting unit for emitting a laser beam at an adhesive layer formed between the mask and the pellicle; a control unit for controlling the wavelength, waveform, and energy density of the laser beam so as to remove the adhesive layer by the emission of the laser beam; and a photographing unit for monitoring a region at which the laser beam is emitted.
Disclosed are a laser processing device and a laser processing method using the same. The disclosed processing device for processing an object to be processed, which is loaded on a stage, using a laser, comprises: a laser light source; a first scanner which is driven to rotate a laser beam emitted from the laser light source; a second scanner which is driven to move the laser beam emitted from the first scanner to a predetermined position of the object to be processed; and a scanner control unit for controlling the driving of the first scanner and the second scanner.
A laser processing apparatus and method are disclosed according to exemplary embodiments. According to the embodiments, provided is a laser processing apparatus comprising: a laser light source which emits a pulse laser; and an optical modulator which shields parts of a laser pulse wave having a laser intensity lower than a predetermined threshold and transmits parts of the laser pulse wave above the predetermined threshold to modulate the shape of the laser pulse.
Disclosed is a laser soldering device for performing a soldering process by emitting a laser beam at a soldering process area on a substrate. The disclosed laser soldering device comprises: a laser light source for oscillating a multi-mode laser beam; and an optical system processing the multi-mode laser beam emitted from the laser light source and emitting the laser beam at the soldering process area, and including a collimator forming the incident multi-mode laser beam as a parallel beam of a certain size and emitting the parallel beam.
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
B23K 26/064 - Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
B23K 26/067 - Dividing the beam into multiple beams, e.g. multi-focusing
B23K 26/211 - Bonding by welding with interposition of special material to facilitate connection of the parts
B23K 31/12 - Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by any single one of main groups relating to investigating the properties, e.g. the weldability, of materials
A laser processing device is disclosed. The disclosed laser processing device comprises: a beam generation unit for emitting a plurality of laser beams; a plurality of scanners for adjusting paths of the plurality of laser beams emitted from the beam generation unit; and a telecentric lens unit allowing laser beams reflected from the scanners to be incident thereon, and condensing the laser beams such that the incident laser beams are vertically incident to a workpiece.
Disclosed are a chamber unit for real-time temperature measurement of a laser irradiation region, and a laser processing system including the same. The disclosed chamber unit comprises: a base plate; a cover plate provided to cover the base plate; a first window which is provided on the cover plate and through which a laser beam penetrates; and a second window which is provided on the cover plate to be separated from the first window and through which a measurement beam for temperature measurement of a specific region of an object to be processed penetrates. .
The present invention relates to a laser processing system and a laser processing method. According to embodiments of the present invention, the laser processing system comprises: a beam splitter for splitting a laser beam, emitted from a laser light source, into a processing beam and a measurement beam; a sensor unit for measuring the strength of the measurement beam from the beam splitter; a control unit for determining whether a change in the strength of the measurement beam over time is within a predetermined tolerance range; and a shutter for blocking the travel of the processing beam when it is determined by the control unit that a change in the strength of the measurement beam over time is out of the predetermined tolerance range.
A focusing point detection device is disclosed. The focusing point detection device, according to one embodiment, comprises: a first beam splitter which is provided between a light source emitting a processing beam and a light-collecting optical system light-collecting the processing beam, and which reflects at least one portion of a reflected beam reflected from a subject to be processed; a first lens unit which focuses the reflected beam reflected from the first beam splitter; and a first optical sensor which is provided in the direction from the first lens unit where the reflected beam is focused, and which measures the energy density of the reflected beam focused by the first lens unit.
A laser processing device is disclosed. The disclosed laser processing device comprises: a light source emitting a processing beam for laser-processing a subject to be processed; a light-collecting optical system light-collecting the processing beam; and an auto-focusing unit adjusting the position of the light-collecting optical system so that the focusing point of the processing beam is formed inside the subject to be processed. The auto-focusing unit comprises: a first beam splitter which is provided between the light-collecting optical system and the light source, and reflects at least one portion of a reflected beam reflected from the subject to be processed; a first lens unit which focuses the reflected beam reflected from the first beam splitter; and a first optical sensor which is provided in the direction from the first lens unit where the reflected beam is focused, and which measures the energy density of the reflected beam focused by the first lens unit.
A method for cutting a glass processed product by using a laser beam is disclosed. The disclosed method for cutting a glass processed product comprises the steps of: irradiating the glass processed product with a first laser beam so as to cut the glass processed product; and irradiating a cut surface of the glass processed product with a second laser beam so as to process the cut surface of the glass processed product. The first and second laser beams are configured to have different wavelengths from each other.
Disclosed is a wafer marking method using a laser for marking a wafer having processing tape attached thereto. The disclosed laser marking method comprises the steps of: penetrating a 532-nm wavelength laser beam through the processing tape attached to one side of the wafer; and performing marking on the one side of the wafer by moving the 532-nm wavelength laser beam at a predetermined velocity, wherein the 532-nm wavelength laser beam has a frequency of 8 kHz to 40 kHz, and an output power of 0.8 W to 2 W.
Disclosed is a method for marking, by using a laser marker, a plurality of wafer dice divided by a wafer dicing process. The disclosed marking method for wafer dice comprises the steps of: setting a plurality of scan regions having a mutually overlapping portion on a wafer including the wafer dice; scanning the scan regions of the wafer a plurality of times by using a line scan camera; collecting position information of each of wafer dice located in regions in which the scan regions do not overlap; collecting, through image synthesis, position information of each of wafer dice located in regions in which the scan regions overlap; and marking, by using the laser marker, each of all the wafer dice of which the position information has been collected.
Disclosed are a laser processing method for cutting a semiconductor wafer having a metal layer formed thereon and a laser processing device. The disclosed laser processing method transmits a plurality of laser beams, which propagate coaxially, to the semiconductor wafer, thereby forming focusing points in positions adjacent to a surface of the metal layer, which constitutes a boundary with the semiconductor wafer, and to one surface of the semiconductor wafer, respectively.
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
95.
CONTINUOUS LASER PROCESSING METHOD USING MULTIPLE POSITIONING CONTROL, AND SYSTEM APPLYING SAME
Disclosed are a laser processing method and a laser processing system applying the same. The laser processing method comprises the steps of: driving a low-rate driver having a workpiece mounted and moving, to the pattern formation position (target position) of the workpiece, the processing region of a high-rate driver which laser-processes the workpiece; laser-processing if the pattern formation position of the workpiece enters into the processing region of the high-rate driver; and transferring the low-rate driver to the next pattern formation position of the workpiece during the laser-processing. DRWAING: FIG. 1: 110 Control host 120 Laser drive 130 Laser system 140 Scanner control part 150 Scanner system 160 Stage control part 170 Stage system AA Feedback (FB)
Disclosed are a laser processing method and a laser processing system employing the same. The laser processing method comprises: a first step of calculating the middle position of adjacent patterns from among a plurality of patterns to be processed; a second step of transferring a low-speed drive to the middle position; and a third step of processing the plurality of patterns by driving a high-speed drive at the middle position, wherein the laser processing for the plurality of patterns to be processed is performed by repeating the first to third steps.
Provided are a high speed laser processing method and apparatus. The laser processing method includes: mounting a processing target on a stage; irradiating a processing laser beam emitted from a laser beam source unit to the processing target by condensing the processing laser beam by using a condensing unit; and processing the processing target while moving the stage and the condensing unit in opposite directions.
Disclosed is a laser machining apparatus comprising: a first scanner for deflecting a first laser beam to a first direction and/or a second direction which is orthogonal to the first direction; a second scanner for deflecting the second laser beam to the first direction and/or the second direction; a condensing lens for condensing the first and second laser beams on a machining target; and a beam guide for guiding the first and second laser beams to the condensing lens by selectively reflecting or transmitting the laser beams.
Disclosed is a laser machining apparatus capable of two-beam machining, the laser machining apparatus comprising: a first scanner for deflecting an incident laser beam to a first direction and/or a second direction which is orthogonal to the first direction; a first laser beam which is incident on the incidence point of the first scanner; a second laser beam which is not parallel to the first laser beam; a second scanner for controlling the angle of the second laser beam on the first laser beam so that the incidence of the second laser beam is on the incident point of the second scanner; and a condensing lens, which is positioned on the exit side of the first scanner, for condensing the first and second laser beams on mutually different locations of the target object.
Disclosed are a laser processing apparatus and method that can effectively remove a low-k material formed on a wafer. A laser processing apparatus of the invention is a laser processing apparatus that processes a subject on which a low-k material is formed. The laser processing apparatus includes a laser generating unit that emits a laser beam; and an optical system that splits the laser beam emitted from the laser generating unit into two and irradiates the split laser beams onto the subject In this case, the optical system includes a pair of condensing lenses in which cut surfaces that are cut at a predetermined distance from central axes to be parallel to the central axes contact with each other, and the interval between the two split laser beams is the same as the interval between two edges of the low-k material in a removal subject region. According to the invention, after splitting a laser beam into two laser beams and primarily removing the edges of the low-k material in the removal subject region using the laser beams, the remaining low-k material between the edges is removed. As a result, it is possible to improve processing quality.
H01L 21/30 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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