A method and system for growing a cesium lithium borate (CsLiB6O10) crystal is provided. Lasers and characterization systems incorporating a cesium lithium borate crystal grown according to the method disclosed herein are also provided. The method includes growing a crystal from a melt that contains chloride (Cl-) ions. These crystals have lower defect density and contain fewer OH groups and/or less water than crystals grown by conventional techniques and so are suitable for use at high powers and short deep UV wavelengths. A frequency conversion apparatus and an optical system containing a frequency conversion apparatus are also provided.
A thermal pump may include a cylinder having a hot end and a cold end, with heating elements at the hot end and cooling elements at the cold end. A piston assembly movable within the cylinder may include a regenerator, a hot displacer, and a cold displacer. The hot displacer can include a thermally-conductive segment shaped to surround the heating elements when in a cooling position, and a thermally-insulating segment between the conductive segment and the regenerator. The cold displacer can include a thermally-conductive segment shaped to surround the cooling elements when in a heating position, and a thermally-insulating segment between the conductive segment and the regenerator.
F04B 37/08 - Pumps specially adapted for elastic fluids and having pertinent characteristics not provided for in, or of interest apart from, groups for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
3.
SIMULTANEOUS, MULTIPLE CHANNEL MEASUREMENTS OF SEMICONDUCTOR STRUCTURES AT DIFFERENT NOMINAL AZIMUTH ANGLES
Methods and systems for simultaneously performing optical based measurements of a semiconductor structure with multiple measurement channels each at different nominal azimuth angles are presented herein. In a further aspect, the measurement channels simultaneously collect measurement data resolved in wavelength, collection angle, polarization, or any combination thereof, at each nominal azimuth angle. In some embodiments, optical radiation generated by a shared illumination source is subdivided into multiple segments, each routed to a different measurement channel. In this manner, more of the optical output of the illumination source is simultaneously directed to the measurement spot of the semiconductor wafer. In some embodiments, multiple illumination pupil apertures are arranged to select different numerical apertures in the azimuth direction, the angle of incidence direction, or both, corresponding to each measurement channel. In another aspect, different measurement channels of a multi-angle measurement system perform measurements over a different spectral range.
The effective quantum efficiency of a metal-channel photomultiplier tube can be increased with an optical system. The optical system can direct incident light from areas of low efficiency on the cathode of the metal-channel photomultiplier tube instead to areas of high efficiency on the cathode. These high-efficiency areas of the cathode can correspond to a position between the dynode structure.
Methods and systems for simultaneously performing optical based measurements of a semiconductor structure with multiple measurement channels each at different nominal azimuth angles are presented herein. In a further aspect, the measurement channels simultaneously collect measurement data resolved in wavelength, collection angle, polarization, or any combination thereof, at each nominal azimuth angle. In some embodiments, optical radiation generated by a shared illumination source is subdivided into multiple segments, each routed to a different measurement channel. In this manner, more of the optical output of the illumination source is simultaneously directed to the measurement spot of the semiconductor wafer. In some embodiments, multiple illumination pupil apertures are arranged to select different numerical apertures in the azimuth direction, the angle of incidence direction, or both, corresponding to each measurement channel. In another aspect, different measurement channels of a multi-angle measurement system perform measurements over a different spectral range.
An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on a first surface of the semiconductor membrane, and a boron-coated, textured surface on a second surface of the semiconductor membrane. The textured surface comprises pseudo-random, periodic, and/or random distribution of upright pyramids, inverted pyramids, and/or nanocones. The textured surface reduces the reflection of incident light across wide bands in the DUV and VUV regimes, thus increasing the amount of light absorbed and improving the efficiency of the image sensor. Reflectance may be further reduced by applying an antireflective coating on the textured surface. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. and incorporated in an inspection system.
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
Optics within a light source may be protected from adverse effects of plasma under low pressure operating conditions. The operation of the source involves excitation of high-temperature plasma producing radiation at a desired wavelength. The operation may include the supply of the fuel, excitation energy, supplemental substances, and extraction of produced radiation by means of refractive and/or reflective optics. The plasma generated during regular operation co-produces highly energetic charged particles and fuel vapors, which, upon interaction with the surface of the optics results in the degradation of the optics performance. To mitigate the degradation, protective gas shields and ducts may be implemented around the optics. The ducts may improve the efficiency of the protective gas shields, which may allow for the reduction of the protective gas consumption requirements.
An overlay metrology system may include an illumination sub-system with one or more lenses that can direct illumination to an overlay target on a sample when implementing a metrology recipe. The illumination may include a first illumination dipole and a second illumination dipole. The overlay target may include two or more cells, where each cell may include first-direction features having periodicity along a first direction and second-direction features having periodicity along a second direction. The system may also include an imaging sub-system with an objective lens that can collect diffraction orders of the illumination generated by the overlay target and one or more detectors. The illumination sub-system and the imaging sub-system may be configured to generate a first image and a second image of the overlay target. A controller with one or more processors may generate overlay measurements based on the first and second images.
An overlay metrology system may include an illumination sub-system with one or more lenses that can direct illumination to an overlay target on a sample when implementing a metrology recipe. The illumination may include a first illumination dipole and a second illumination dipole. The overlay target may include two or more cells, where each cell may include first-direction features having periodicity along a first direction and second-direction features having periodicity along a second direction. The system may also include an imaging sub-system with an objective lens that can collect diffraction orders of the illumination generated by the overlay target and one or more detectors. The illumination sub-system and the imaging sub-system may be configured to generate a first image and a second image of the overlay target. A controller with one or more processors may generate overlay measurements based on the first and second images.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
10.
SPLIT OBJECTIVE LENS FOR ELECTRON BEAMS TO ENHANCE TOPOGRAPHICAL IMAGING
A system uses a split objective lens with an electron beam. The system has an electron beam source that generates an electron beam, a stage configured to hold a workpiece in a path of the electron beam, a detector that receives secondary electrons and back-scattered electrons emitted from the workpiece on the stage, and an objective lens disposed in the path of the electron beam. The objective lens includes an inner pole piece, an outer pole piece, and a coil between the inner pole piece and the outer pole piece. The inner pole piece defines a gap along the path of the electron beam.
A metrology system including a measurement sub-system to collect zero-order double diffraction from a metrology target in response to an illumination beam, where the metrology target includes one or more grating-over-grating structures, having common pitches on two sample layers. The system may further include a controller to generate an after-develop inspection (ADI) metrology measurement of the metrology target at an ADI process step, generate an after-etch inspection (AEI) metrology measurement of the metrology target at an AEI process step, determine a non-zero offset (NZO) measurement based on a difference of the ADI metrology measurement and the AEI metrology measurement, and control one or more process tools based on at least one of the ADI metrology measurement, the AEI metrology measurement, or the NZO measurement.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A metrology system including a measurement sub-system to collect zero-order double diffraction from a metrology target in response to an illumination beam, where the metrology target includes one or more grating-over-grating structures, having common pitches on two sample layers. The system may further include a controller to generate an after-develop inspection (ADI) metrology measurement of the metrology target at an ADI process step, generate an after-etch inspection (AEI) metrology measurement of the metrology target at an AEI process step, determine a non-zero offset (NZO) measurement based on a difference of the ADI metrology measurement and the AEI metrology measurement, and control one or more process tools based on at least one of the ADI metrology measurement, the AEI metrology measurement, or the NZO measurement.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
13.
SPLIT OBJECTIVE LENS FOR ELECTRON BEAM TO ENHANCE TOPOGRAPHICAL IMAGING
A system uses a split objective lens with an electron beam. The system has an electron beam source that generates an electron beam, a stage configured to hold a workpiece in a path of the electron beam, a detector that receives secondary electrons and back-scattered electrons emitted from the workpiece on the stage, and an objective lens disposed in the path of the electron beam. The objective lens includes an inner pole piece, an outer pole piece, and a coil between the inner pole piece and the outer pole piece. The inner pole piece defines a gap along the path of the electron beam.
Methods and systems for high throughput and high resolution measurement of surface topography of substrates employed in semiconductor device manufacturing are described herein. A beam steering device scans an illumination beam along a beam scan path incident on a substrate surface. In addition, a specimen positioning system moves the substrate with respect to the illumination beam. In some embodiments, a hypercentric focusing lens in the illumination beam path between the beam steering device and the substrate eliminates the need for an optical element in the optical path between the surface under measurement and a position sensitive detector in the optical path of the reflected beam. A computing system generates a map of wafer tilt based on the detected position of the reflected beam at the detector. In a further aspect, a high resolution surface height map is generated based on the measured surface tilt map.
Methods and systems for high throughput and high resolution measurement of surface topography of substrates employed in semiconductor device manufacturing are described herein. A beam steering device scans an illumination beam along a beam scan path incident on a substrate surface. In addition, a specimen positioning system moves the substrate with respect to the illumination beam. In some embodiments, a hypercentric focusing lens in the illumination beam path between the beam steering device and the substrate eliminates the need for an optical element in the optical path between the surface under measurement and a position sensitive detector in the optical path of the reflected beam. A computing system generates a map of wafer tilt based on the detected position of the reflected beam at the detector. In a further aspect, a high resolution surface height map is generated based on the measured surface tilt map.
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01B 7/06 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width, or thickness for measuring thickness
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
A metrology system may include a light source providing illumination, a single objective lens to direct the illumination to an overlay target with a top-substrate feature and a bottom-substrate feature and collect sample light from the overlay target, an adjustable illumination aperture stop to adjust an illumination numerical aperture, a detector configured to image the sample based on the sample light with both the top-substrate feature and the bottom-substrate feature within a field of view, and an adjustable collection aperture stop configured to adjust an imaging NA. The system may include a controller to receive a thickness of the top substrate, generate at least a portion of the metrology recipe defining imaging parameters providing a desired contrast, receive an image of the overlay target based on the metrology recipe, and generate an overlay measurement between the top substrate and the bottom substrate based on the image.
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
17.
ULTRA-HIGH SENSITIVITY HYBRID INSPECTION WITH FULL WAFER COVERAGE CAPABILITY WITH STEP AND SETTLE STAGE
A hybrid inspection system comprising is disclosed. The hybrid inspection system includes an optical inspection tool configured to identify candidate defects on a sample by directing an illumination beam to the sample with light and collecting scattered light from the sample in response to the illumination beam. The hybrid inspection system includes a multi-column inspection tool to identify defects of interest from the candidate defects, wherein the multi-column inspection tool comprises: two or more columns to simultaneously image two or more measurement regions on the sample and a translation stage configured to secure and position the sample with respect to the two or more columns, wherein the translation stage is configured to image at least a portion of the candidate defects using a step-and-settle sampling plan.
A hyperspectral inspection system is disclosed. The hyperspectral inspection system may include a broadband light source configured to emit broadband light. The hyperspectral inspection system may include a set of illumination optics configured to direct broadband light to a sample. The hyperspectral inspection system may include a hyperspectral camera assembly, and a set of imaging optics configured to collect light from the sample and direct light to the hyperspectral camera assembly to acquire multiple images of the sample at different wavelength bands. The hyperspectral camera assembly may include a set of sensors and a set of filter plates positioned in front of the set of sensors, wherein a respective filter plate is positioned in front of a respective sensor.
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
19.
SYSTEM AND METHOD FOR SPECTROSCOPIC CRITICAL DIMENSION MEASUREMENT WITH TWO-DIMENSIONAL DETECTOR ASSEMBLY
The system includes a light source configured to emit light to illuminate a workpiece, an optical subsystem including one or more lenses, mirrors, and diffraction gratings configured to direct and manipulate the light reflected by the workpiece, and a detector assembly configured to detect the light reflected by the workpiece. The detector assembly includes a two-dimensional sensor array and a two-dimensional microlens array, and each sensor is configured to independently generate measurement data based on the light transmitted through the two-dimensional microlens array. The system further includes a processor configured to receive the measurement data from each sensor and a corresponding location of each sensor in the two-dimensional sensor array and determine a spectroscopic critical dimension (SCD) of the workpiece based on the measurement data generated across the two-dimensional sensor array and the corresponding location of each sensor.
A positioning system may use an external motor actuator to eliminate an on-board actuator of the x/y-axis stage by connecting to the x/y-axis stage via a beam. The beam may be connected to the motor actuator mounted on a base of the positioning system. The beam may be connected to an upper axis carriage by linear bearings, allowing the x/y-axis stage to move in a perpendicular direction as the x/y-axis stage follows the beam. The positioning system may be used in a processing system to x/y-axis scan the chuck under a processing head.
B23K 15/08 - Removing material, e.g. by cutting, by hole drilling
B23K 37/04 - Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
A hybrid inspection system comprising is disclosed. The hybrid inspection system includes an optical inspection tool configured to identify candidate defects on a sample by directing an illumination beam to the sample with light and collecting scattered light from the sample in response to the illumination beam. The hybrid inspection system includes a multi-column inspection tool to identify defects of interest from the candidate defects, wherein the multi-column inspection tool comprises: two or more columns to simultaneously image two or more measurement regions on the sample and a translation stage configured to secure and position the sample with respect to the two or more columns, wherein the translation stage is configured to image at least a portion of the candidate defects using a step-and-settle sampling plan.
A metrology system may include a light source providing illumination, a single objective lens to direct the illumination to an overlay target with a top-substrate feature and a bottom-substrate feature and collect sample light from the overlay target, an adjustable illumination aperture stop to adjust an illumination numerical aperture, a detector configured to image the sample based on the sample light with both the top-substrate feature and the bottom-substrate feature within a field of view, and an adjustable collection aperture stop configured to adjust an imaging NA. The system may include a controller to receive a thickness of the top substrate, generate at least a portion of the metrology recipe defining imaging parameters providing a desired contrast, receive an image of the overlay target based on the metrology recipe, and generate an overlay measurement between the top substrate and the bottom substrate based on the image.
A positioning system may use an external motor actuator to eliminate an on-board actuator of the x/y-axis stage by connecting to the x/y-axis stage via a beam. The beam may be connected to the motor actuator mounted on a base of the positioning system. The beam may be connected to an upper axis carriage by linear bearings, allowing the x/y-axis stage to move in a perpendicular direction as the x/y-axis stage follows the beam. The positioning system may be used in a processing system to x/y-axis scan the chuck under a processing head.
H02K 41/03 - Synchronous motorsMotors moving step by stepReluctance motors
H02K 15/02 - Processes or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines of stator or rotor bodies
H01J 37/20 - Means for supporting or positioning the object or the materialMeans for adjusting diaphragms or lenses associated with the support
24.
MULTIWAVELENGTH MEASUREMENTS FOR SCANNING OVERLAY METROLOGY
A metrology system and method for imaging samples such as semiconductor devices having metrology targets for measuring overlay. In embodiments, the system includes an illumination source configured to generate a multiwavelength illumination beam, collection channels for collecting wavelength-selective collected light from the sample in accordance with a metrology recipe, and a controller configured to receive wavelength-selective datasets and determine at least one overlay measurement from the wavelength-selective datasets received.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
25.
COHERENT OUTSIDE-THE-LENS IMAGING OF MOIRÉ TARGETS FOR OVERLAY METROLOGY
An overlay metrology system may include an illumination source configured to generate one or more illumination beams, an objective lens, an illumination sub-system, and an imaging system to generate one or more images of an overlay target having one or more Moiré structures, where a particular image is based on two selected mutually coherent diffraction lobes per measurement direction associated with one or more illumination beams rotated azimuthally with respect to one or more measurement directions. The system may further include a controller to generate one or more overlay measurements based on the one or more images.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
26.
MULTIWAVELENGTH MEASUREMENTS FOR SCANNING OVERLAY METROLOGY
A metrology system and method for imaging samples such as semiconductor devices having metrology targets for measuring overlay. In embodiments, the system includes an illumination source configured to generate a multiwavelength illumination beam, collection channels for collecting wavelength-selective collected light from the sample in accordance with a metrology recipe, and a controller configured to receive wavelength-selective datasets and determine at least one overlay measurement from the wavelength-selective datasets received.
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
27.
COHERENT OUTSIDE-THE-LENS IMAGING OF MOIRÉ TARGETS FOR OVERLAY METROLOGY
An overlay metrology system may include an illumination source configured to generate one or more illumination beams, an objective lens, an illumination sub-system, and an imaging system to generate one or more images of an overlay target having one or more Moiré structures, where a particular image is based on two selected mutually coherent diffraction lobes per measurement direction associated with one or more illumination beams rotated azimuthally with respect to one or more measurement directions. The system may further include a controller to generate one or more overlay measurements based on the one or more images.
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
28.
SYSTEM AND METHOD FOR SPECTROSCOPIC CRITICAL DIMENSION MEASUREMENT WITH TWO-DIMENSIONAL DETECTOR ASSEMBLY
The system includes a light source configured to emit light to illuminate a workpiece, an optical subsystem including one or more lenses, mirrors, and diffraction gratings configured to direct and manipulate the light reflected by the workpiece, and a detector assembly configured to detect the light reflected by the workpiece. The detector assembly includes a two-dimensional sensor array and a two-dimensional microlens array, and each sensor is configured to independently generate measurement data based on the light transmitted through the two-dimensional microlens array. The system further includes a processor configured to receive the measurement data from each sensor and a corresponding location of each sensor in the two-dimensional sensor array and determine a spectroscopic critical dimension (SCD) of the workpiece based on the measurement data generated across the two-dimensional sensor array and the corresponding location of each sensor.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A metrology system may include an illumination source to generate one or more illumination beams, a detector, and an imaging sub-system including one or more lenses to image a sample onto the detector, where the sample includes overlapping periodic features on two sample layers. The imaging sub-system may image the overlapping periodic features using zero-order double diffraction of the one or more illumination beams by the overlapping periodic features. The system may further include a controller to receive an image of the overlapping periodic features from the detector based on the zero-order double diffraction of the one or more illumination beams by the overlapping periodic features and generate metrology measurements of the sample based on the image. Constituent features of the overlapping periodic features may be unresolved in the image, but the metrology measurements may be spatially resolved across the image.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Methods and systems for performing accurate and robust scatterometry based measurements of relatively large dimension structures fabricated using semiconductor fabrication processes are presented herein. In some examples, relatively large dimension structures include spiral-shaped features that are not periodic. In one aspect, one or more relatively large dimension device structures are fabricated on a specimen along with one or more proxy metrology targets. Each of the one or more proxy metrology targets are spatially periodic and include an array of nominally identical curved segments characterized by a radius of curvature. The radius of curvature associated with each of the plurality of proxy metrology targets corresponds to the radius of curvature of each of the plurality of turnings of a spiral-shaped device structure. In preferred embodiments, the film stack and line/space ratio associated with each of the proxy metrology targets is the same as the device structures.
An overlay target may include a first bonded substrate arranged on a first layer. The overlay target may include a second bonded substrate arranged on a second layer. The overlay target may include a third bonded substrate arranged on a third layer, where each bonded substrate includes one or more features embedded in the respective bonded substrate.
A metrology system may include an illumination source to generate one or more illumination beams, a detector, and an imaging sub-system including one or more lenses to image a sample onto the detector, where the sample includes overlapping periodic features on two sample layers. The imaging sub-system may image the overlapping periodic features using zero-order double diffraction of the one or more illumination beams by the overlapping periodic features. The system may further include a controller to receive an image of the overlapping periodic features from the detector based on the zero-order double diffraction of the one or more illumination beams by the overlapping periodic features, and generate metrology measurements of the sample based on the image. Constituent features of the overlapping periodic features may be unresolved in the image, but the metrology measurements may be spatially resolved across the image.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An overlay target may include a first bonded substrate arranged on a first layer. The overlay target may include a second bonded substrate arranged on a second layer. The overlay target may include a third bonded substrate arranged on a third layer, where each bonded substrate includes one or more features embedded in the respective bonded substrate.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
34.
METHODS AND SYSTEMS OF FILM FRAME PRE-ALIGNMENT FOR SEMICONDUCTOR MEASUREMENT EQUIPMENT
Methods and systems for high precision, high throughput measurement of devices mounted to a Film Frame (FF) are described herein. A pre-alignment system precisely measures the position and orientation of both a film frame and a wafer supported by the film frame with respect to a coordinate system fixed to a measurement system employed to characterize devices under measurement. In this manner, the film frame and the wafer supported by the film frame are loaded onto a measurement system chuck with a known orientation and position with respect to the measurement system. Precise knowledge of position and orientation of the film frame and wafer enables measurement system navigation through wafer sites with minimal throughput loss as additional search and alignment sequences are generally not required. In preferred embodiments, a pre-alignment system is integrated with a measurement system to perform pre-alignment functionality within a shared equipment footprint.
Methods and systems for performing accurate and robust scatterometry based measurements of relatively large dimension structures fabricated using semiconductor fabrication processes are presented herein. In some examples, relatively large dimension structures include spiral-shaped features that are not periodic. In one aspect, one or more relatively large dimension device structures are fabricated on a specimen along with one or more proxy metrology targets. Each of the one or more proxy metrology targets are spatially periodic and include an array of nominally identical curved segments characterized by a radius of curvature. The radius of curvature associated with each of the plurality of proxy metrology targets corresponds to the radius of curvature of each of the plurality of turnings of a spiral-shaped device structure. In preferred embodiments, the film stack and line/space ratio associated with each of the proxy metrology targets is the same as the device structures.
An auto-focusing system is disclosed. The system includes an illumination source. The system includes an aperture. The system includes a projection mask. The system includes a detector assembly. The system includes a relay system, the relay system being configured to optically couple illumination transmitted through the projection mask to an imaging system. The relay system also being configured to project one or more patterns from the projection mask onto a specimen and transmit an image of the projection mask from the specimen to the detector assembly. The system includes a controller including one or more processors configured to execute a set of program instructions. The program instructions being configured to cause the one or more processors to: receive one or more images of the projection mask from the detector assembly and determine quality of the one or more images of the projection mask.
A laser-sustained broadband light source is disclosed. The light source may include a gas containment structure, a pump laser source, and a light collector element. The gas containment structure may include a body formed from an optically transparent material, such as fused silica, and one or more windows transmissive to vacuum ultraviolet (VUV) light. The one or more windows may be bonded to one or more extension portions, thereby ensuring a sealed internal gas volume and avoiding exposure of metal components to destructive VUV radiation. The pump laser source may be configured to direct the pump beam into the gas containment structure to sustain a plasma, emitting broadband light through the one or more windows. Optional retroreflectors may be included to enhance light collection efficiency. The light source configuration extends the spectral range into the VUV and/or infrared regions, improves manufacturability, and enhances plasma stability.
Methods and systems for determining information for a specimen are provided. One system includes a deep learning (DL) model configured for transforming information for a design for a specimen into an encoded representation of the design that includes encoded design attributes as a function of position in the design. A computer system stores the encoded representation for use in a process performed on the specimen by a tool. The encoded representation may be configured as a design attribute map that can be used for applications such as, but not limited to, defect classification and nuisance filtering. One significant advantage of the embodiments described herein is that they enable such applications to be performed inline even for substantially large numbers of defects.
A system may include a lateral shearing interferometer. The lateral shearing interferometer may enable measuring a surface profile of a sample, such as the pattern wafers, using reflected light from the sample. The reflected light may be reflected at a grazing incidence angle. A controller may receive images from the lateral shearing interferometer and measure the surface profile. The controller may measure the surface profile by reconstructing a phase of the reflected light from the images. The controller may reconstruct the phase using spatial reconstruction or time-domain reconstruction. The gratings may allow the controller to measure the edge roll-off in one or two dimensions. The controller may also calibrate the grazing incidence angle and determine refractive indices of thin-films on the sample. The controller may also perform full measurements of the surface profile using line beams, rectangular beams, or full-sample beams.
Methods and systems for high precision, high throughput measurement of devices mounted to a Film Frame (FF) are described herein. A pre-alignment system precisely measures the position and orientation of both a film frame and a wafer supported by the film frame with respect to a coordinate system fixed to a measurement system employed to characterize devices under measurement. In this manner, the film frame and the wafer supported by the film frame are loaded onto a measurement system chuck with a known orientation and position with respect to the measurement system. Precise knowledge of position and orientation of the film frame and wafer enables measurement system navigation through wafer sites with minimal throughput loss as additional search and alignment sequences are generally not required. In preferred embodiments, a pre-alignment system is integrated with a measurement system to perform pre-alignment functionality within a shared equipment footprint.
G06T 7/73 - Determining position or orientation of objects or cameras using feature-based methods
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H04N 23/56 - Cameras or camera modules comprising electronic image sensorsControl thereof provided with illuminating means
A refillable plasma lamp assembly for laser-sustained plasma light sources is disclosed. The lamp assembly includes a transparent lamp body defining a sealed internal volume, a glass-to-metal fitting with a metal flange, and a glass-to-metal seal hermetically coupling the lamp body and fitting. The lamp flange is configured to connect to an external gas fitting for supplying and removing working gas to and from the sealed internal volume during plasma operation. The lamp body may be connected to a glass portion of the glass-to-metal fitting via a glass-to-glass connection. The lamp assembly may include a fill port for gas exchange between the lamp flange and the external gas fitting. This construction enables dynamic control of gas composition and pressure in semiconductor metrology and inspection applications. The refillable design improves safety by permitting unpressurized shipping and resists deterioration from reactive gases.
A laser-sustained broadband light source is disclosed. The light source may include a gas containment structure, a pump laser source, and a light collector element. The gas containment structure may include a body formed from an optically transparent material, such as fused silica, and one or more windows transmissive to vacuum ultraviolet (VUV) light. The one or more windows may be bonded to one or more extension portions, thereby ensuring a sealed internal gas volume and avoiding exposure of metal components to destructive VUV radiation. The pump laser source may be configured to direct the pump beam into the gas containment structure to sustain a plasma, emitting broadband light through the one or more windows. Optional retroreflectors may be included to enhance light collection efficiency. The light source configuration extends the spectral range into the VUV and/or infrared regions, improves manufacturability, and enhances plasma stability.
H01J 61/10 - Shield, screens, or guides for influencing the discharge
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01J 61/02 - Gas-discharge or vapour-discharge lamps Details
H01J 61/16 - Selection of substances for gas fillingsSpecified operating pressure or temperature having helium, argon, neon, krypton, or xenon as the principle constituent
43.
VUV LASER-SUSTAINED PLASMA LIGHT SOURCE WITH DIRECT GAS FLOW
A high-power vacuum ultraviolet laser-sustained broadband plasma light source is disclosed. The light source includes a laser pump source to sustain a plasma within a gas chamber assembly. The gas chamber assembly includes a gas chamber and a laser input for directing a laser pump beam into a plasma region and a laser output for transmitting unabsorbed laser pump light outside the chamber. The gas chamber assembly includes one or more broadband output windows. The gas chamber assembly includes one or more transparent nozzles configured to direct gas flow into the plasma region and transmit the one or more laser pump beams to the plasma region. The gas chamber assembly includes one or more transparent cones configured to shield one or more optical collection paths from gas flow. The gas chamber assembly includes gas inlets and outlets for maintaining gas flow through the plasma region.
H01J 61/28 - Means for producing, introducing, or replenishing gas or vapour during operation of the lamp
H01J 61/02 - Gas-discharge or vapour-discharge lamps Details
H01J 61/16 - Selection of substances for gas fillingsSpecified operating pressure or temperature having helium, argon, neon, krypton, or xenon as the principle constituent
H01J 65/04 - Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating
44.
MULTI AXES MOTION MECHANISM ENABLING MULTIPLE OPTICAL COLUMNS METROLOGY SYSTEM
The system includes a stage configured to support a workpiece and a plurality of optical heads arranged above the stage. Each optical head includes a camera configured to capture a first image of one of a plurality of targets defined on a surface of the workpiece positioned along an optical axis of the camera and a motion mechanism configured to translate the optical head along three axes relative to the stage and rotate the optical head along two axes orthogonal to the optical axis. For each optical head, a processor determines a corrective movement of the optical head based on a misalignment of the optical axis of the camera relative to the target in a first image of the target captured by the camera, and sends instructions to the motion mechanism to move the optical head according to the corrective movement to align the optical axis with the target.
A laser assembly and a method for generating continuous-wave (CW) light at approximately 193 nm (between 180 nm and 200 nm) and at a power of 1 W or higher using two CW laser sources: one laser source generating first fundamental light that is twice frequency doubled or otherwise converted into first CW light having a first deep-ultraviolet (DUV) wavelength between 250 nm and 275 nm, the other laser source generating second CW light having an infrared (IR) wavelength between 1300 nm and 1700 nm. A resonant cavity receives the second CW light and generates enhanced CW light at 100 W or higher. A first non-linear optical (NLO) crystal mixes a first enhanced CW light portion and the first CW light to generate sum-frequency generation (SFG) light having a second DUV wavelength. A second NLO crystal mixes a second enhanced CW light portion and the SFG light to generate output CW light at approximately 193 nm.
H01S 3/08 - Construction or shape of optical resonators or components thereof
H01S 3/081 - Construction or shape of optical resonators or components thereof comprising three or more reflectors
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H01S 3/105 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity
46.
Feature Transformer Architecture For Advanced Semiconductor Metrology
Methods and systems for measurements of complex semiconductor structures employing measurement signal combinations derived from optical, x-ray, or electron based measurements of the structure of interest are described herein. The derived measurement signal combinations highlight signal features that exhibit enhanced sensitivity to one or more parameters of interest characterizing the semiconductor structure under measurement. In one aspect, one or more measurement signal combinations are analytically derived by operation of a mathematical function or combination of multiple mathematical functions on measurement signals. In another aspect, one or more measurement signal combinations are derived by operation of a Measurement Signal Object (MSO) model on measurement signals. An MSO model is determined using a transformer architecture employing an attention mechanism operating on tokenized measurement data. A trained MSO model identifies measurement signal objects most highly correlated to parameters of interest.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
47.
MACHINE LEARNING BASED METROLOGY UPSAMPLING USING A TRANSFORMER ARCHITECTURE
Methods and systems for upsampling specimen information are provided. In general, the embodiments are configured for upsampling metrology information for a specimen using a transformer architecture. The transformer is configured for self-attention and cross-attention. Inputs to an encoder of the transformer for sparse locations on a specimen may include metrology information and coordinates of the sparse locations in addition to other information such as additional metrology variables and information generated by a process tool that performs a process on the specimen. Inputs to a decoder of the transformer for the dense locations include only the coordinates of the dense locations and some information generated for the dense locations by the process tool. The decoder outputs the metrology information for the dense locations.
A system may include a lateral shearing interferometer. The lateral shearing interferometer may enable measuring a surface profile of a sample, such as the pattern wafers, using reflected light from the sample. The reflected light may be reflected at a grazing incidence angle. A controller may receive images from the lateral shearing interferometer and measure the surface profile. The controller may measure the surface profile by reconstructing a phase of the reflected light from the images. The controller may reconstruct the phase using spatial reconstruction or time-domain reconstruction. The gratings may allow the controller to measure the edge roll-off in one or two dimensions. The controller may also calibrate the grazing incidence angle and determine refractive indices of thin-films on the sample. The controller may also perform full measurements of the surface profile using line beams, rectangular beams, or full-sample beams.
Methods and systems for determining information for a specimen are provided. One system includes a deep learning (DL) model configured for transforming information for a design for a specimen into an encoded representation of the design that includes encoded design attributes as a function of position in the design. A computer system stores the encoded representation for use in a process performed on the specimen by a tool. The encoded representation may be configured as a design attribute map that can be used for applications such as, but not limited to, defect classification and nuisance filtering. One significant advantage of the embodiments described herein is that they enable such applications to be performed inline even for substantially large numbers of defects.
G01N 23/18 - Investigating the presence of defects or foreign matter
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
A high-power vacuum ultraviolet laser-sustained broadband plasma light source is disclosed. The light source includes a laser pump source to sustain a plasma within a gas chamber assembly. The gas chamber assembly includes a gas chamber and a laser input for directing a laser pump beam into a plasma region and a laser output for transmitting unabsorbed laser pump light outside the chamber. The gas chamber assembly includes one or more broadband output windows. The gas chamber assembly includes one or more transparent nozzles configured to direct gas flow into the plasma region and transmit the one or more laser pump beams to the plasma region. The gas chamber assembly includes one or more transparent cones configured to shield one or more optical collection paths from gas flow. The gas chamber assembly includes gas inlets and outlets for maintaining gas flow through the plasma region.
A refillable plasma lamp assembly for laser-sustained plasma light sources is disclosed. The lamp assembly includes a transparent lamp body defining a sealed internal volume, a glass-to-metal fitting with a metal flange, and a glass-to-metal seal hermetically coupling the lamp body and fitting. The lamp flange is configured to connect to an external gas fitting for supplying and removing working gas to and from the sealed internal volume during plasma operation. The lamp body may be connected to a glass portion of the glass-to-metal fitting via a glass-to-glass connection. The lamp assembly may include a fill port for gas exchange between the lamp flange and the external gas fitting. This construction enables dynamic control of gas composition and pressure in semiconductor metrology and inspection applications. The refillable design improves safety by permitting unpressurized shipping and resists deterioration from reactive gases.
H01J 65/04 - Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating
H01J 61/36 - Seals between parts of vesselsSeals for leading-in conductorsLeading-in conductors
52.
MACHINE LEARNING BASED METROLOGY UPSAMPLING USING A TRANSFORMER ARCHITECTURE
Methods and systems for upsampling specimen information are provided. In general, the embodiments are configured for upsampling metrology information for a specimen using a transformer architecture. The transformer is configured for self-attention and cross-attention. Inputs to an encoder of the transformer for sparse locations on a specimen may include metrology information and coordinates of the sparse locations in addition to other information such as additional metrology variables and information generated by a process tool that performs a process on the specimen. Inputs to a decoder of the transformer for the dense locations include only the coordinates of the dense locations and some information generated for the dense locations by the process tool. The decoder outputs the metrology information for the dense locations.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The system includes a stage configured to support a workpiece and a plurality of optical heads arranged above the stage. Each optical head includes a camera configured to capture a first image of one of a plurality of targets defined on a surface of the workpiece positioned along an optical axis of the camera and a motion mechanism configured to translate the optical head along three axes relative to the stage and rotate the optical head along two axes orthogonal to the optical axis. For each optical head, a processor determines a corrective movement of the optical head based on a misalignment of the optical axis of the camera relative to the target in a first image of the target captured by the camera, and sends instructions to the motion mechanism to move the optical head according to the corrective movement to align the optical axis with the target.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
54.
High Power 193 Nanometer Continuous-Wave Laser Light
A laser assembly and a method for generating continuous-wave (CW) light at approximately 193 nm (between 180 nm and 200 nm) and at a power of 1W or higher using two CW laser sources: one laser source generating first fundamental light that is twice frequency doubled or otherwise converted into first CW light having a first deep-ultraviolet (DUV) wavelength between 250 nm and 275 nm, the other laser source generating second CW light having an infrared (IR) wavelength between 1300 nm and 1700 nm. A resonant cavity receives the second CW light and generates enhanced CW light at 100 W or higher. A first non-linear optical (NLO) crystal mixes a first enhanced CW light portion and the first CW light to generate sum-frequency generation (SFG) light having a second DUV wavelength. A second NLO crystal mixes a second enhanced CW light portion and the SFG light to generate output CW light at approximately 193 nm.
Semiconductor manufacturing apparatus, namely, physical vapor deposition (PVD) systems and magnetron modules for use in sputter deposition chambers, for controlling thin-film deposition and improving film uniformity and material utilization.
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductor manufacturing apparatus, namely, physical vapor deposition (PVD) systems and magnetron modules for use in sputter deposition chambers, for controlling thin-film deposition and improving film uniformity and material utilization
57.
Cleanroom compatible robotic end effector exchange system
The system includes a robot interface disposed on a robot arm, and an end effector configured to selectively couple to the robot arm via the robot interface. The end effector includes an upper jaw, a lower jaw, and a pair of arms configured to carry a substrate. The upper jaw and the lower jaw are spaced apart in a first direction and biased together, and the pair of arms are spaced apart in a second direction orthogonal to the first direction. When the end effector is coupled to the robot arm, the robot interface is disposed between the upper jaw and the lower jaw. To exchange the end effector, the upper jaw and the lower jaw can be separated to release the robot interface.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
B25J 15/04 - Gripping heads with provision for the remote detachment or exchange of the head or parts thereof
B25J 19/00 - Accessories fitted to manipulators, e.g. for monitoring, for viewingSafety devices combined with or specially adapted for use in connection with manipulators
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
58.
FEATURE TRANSFORMER ARCHITECTURE FOR ADVANCED SEMICONDUCTOR METROLOGY
Methods and systems for measurements of complex semiconductor structures employing measurement signal combinations derived from optical, x-ray, or electron based measurements of the structure of interest are described herein. The derived measurement signal combinations highlight signal features that exhibit enhanced sensitivity to one or more parameters of interest characterizing the semiconductor structure under measurement. In one aspect, one or more measurement signal combinations are analytically derived by operation of a mathematical function or combination of multiple mathematical functions on measurement signals. In another aspect, one or more measurement signal combinations are derived by operation of a Measurement Signal Object (MSO) model on measurement signals. An MSO model is determined using a transformer architecture employing an attention mechanism operating on tokenized measurement data. A trained MSO model identifies measurement signal objects most highly correlated to parameters of interest.
Methods and systems for generating bright-field ellipsometric images indicative of structural defects sized below the optical resolution limit are presented herein. In some examples, bright-field ellipsometric images offer a higher signal to noise ratio of small defect signals to nuisance pattern noise signals compared to dark-field imaging at the null condition. Various ellipsometric imaging techniques are employed to generate images of a wafer or reticle under inspection. The images provide intensity contrast that is indicative of phase differences induced by the scattering response of different structures in the imaging field of the ellipsometric imaging system. In one aspect, an ellipsometric imaging system employs a polarizer in the illumination path and an analyzer and at least one waveplate in the imaging path. The ellipsometric imaging system generates images having intensity differences that differentiate defects of interest from nuisance pattern noise with relatively high signal to noise ratio.
A metrology system includes an illumination source generating illumination beams. Illumination optics direct the beams to a sample surface at non-zero incidence angles. Detectors collect light from the sample surface, with collection optics directing this light to the detectors. A controller with processors executes program instructions to receive metrology data from detectors based on collected light. The metrology data includes measurements at multiple tilt angles based on non-zero incidence. The processors determine a bottom critical dimension value at zero-degree incidence by extrapolating measurement data collected at the multiple tilt angles.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
61.
ELLIPSOMETRIC IMAGING FOR OPTICAL DEFECT INSPECTION
Methods and systems for generating bright-field ellipsometric images indicative of structural defects sized below the optical resolution limit are presented herein. In some examples, bright-field ellipsometric images offer a higher signal to noise ratio of small defect signals to nuisance pattern noise signals compared to dark-field imaging at the null condition. Various ellipsometric imaging techniques are employed to generate images of a wafer or reticle under inspection. The images provide intensity contrast that is indicative of phase differences induced by the scattering response of different structures in the imaging field of the ellipsometric imaging system. In one aspect, an ellipsometric imaging system employs a polarizer in the illumination path and an analyzer and at least one waveplate in the imaging path. The ellipsometric imaging system generates images having intensity differences that differentiate defects of interest from nuisance pattern noise with relatively high signal to noise ratio.
An inspection system may include an objective lens housing, where the objective lens housing is configured to house an objective lens. The inspection system may include a purging sub-system configured to deliver a gas to a sample as the sample is scanned. The purging sub-system may include a gas source configured to provide the gas, one or more flow valves, one or more flow controllers, an upstream purging channel within the objective lens housing of the objective lens, and an upstream purging outlet connected to the upstream purging channel and configured to purge the gas. The upstream purging outlet may be positioned upstream from a scan direction of the sample, such that as the sample is scanned, the gas is moved towards a field of view of the objective lens.
A metrology system includes an illumination source generating illumination beams. Illumination optics direct the beams to a sample surface at non-zero incidence angles. Detectors collect light from the sample surface, with collection optics directing this light to the detectors. A controller with processors executes program instructions to receive metrology data from detectors based on collected light. The metrology data includes measurements at multiple tilt angles based on non-zero incidence. The processors determine a bottom critical dimension value at zero-degree incidence by extrapolating measurement data collected at the multiple tilt angles.
An inspection system may include an objective lens housing, where the objective lens housing is configured to house an objective lens. The inspection system may include a purging sub-system configured to deliver a gas to a sample as the sample is scanned. The purging sub-system may include a gas source configured to provide the gas, one or more flow valves, one or more flow controllers, an upstream purging channel within the objective lens housing of the objective lens, and an upstream purging outlet connected to the upstream purging channel and configured to purge the gas. The upstream purging outlet may be positioned upstream from a scan direction of the sample, such that as the sample is scanned, the gas is moved towards a field of view of the objective lens.
A binary segmented image is determined from a scanning electron beam image using a supervised deep learning image segmentation model. The binary segmented image is rendered to be binary and is segmented to include only some features of the image. The binary segmented image is matched to a region of a design image. Defect detection is performed in the image using the region of the design image.
A binary segmented image is determined from a scanning electron beam image using a supervised deep learning image segmentation model. The binary segmented image is rendered to be binary and is segmented to include only some features of the image. The binary segmented image is matched to a region of a design image. Defect detection is performed in the image using the region of the design image.
A process condition measurement device may include a substrate and a cover. The cover may cover the substrate to protect sensors and interconnects from a process environment, such as from corrosive gases, plasma, and radio frequency signals. The cover may uncover portions of the substrate to improve the thermo-mechanical behavior of the substrate. The cover may uncover portions of the substrate by blank-through holes which are offset from the sensors and interconnects. The cover may also uncover portions of the substrate by grooves formed through the cover. The process condition measurement device may also include a thin-film which is formed over the interconnects. The thin-film may protect interconnects from the process environment. The blank-through holes, the grooves, and the thin-films may be used separately or in combination.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Methods and systems for compensating for uncertainty in illumination angle of incidence to enable accurate measurements of semiconductor structures are described herein. In one aspect, measurements are performed at one or more nominal angles of incidence, an actual angle of incidence corresponding to each measurement is estimated, and a value of a parameter of interest characterizing a measured structure is estimated based at least in part on the collected measurement data and the actual angle of incidence. In some examples, an actual angle of incidence is directly measured. In some other examples, an actual angle of incidence is estimated from measurement data collected over a range of nominal illumination angles of incidence. In some other examples, an actual angle of incidence with respect to a tilted structure is estimated from measurement data collected over a range of nominal illumination angles of incidence.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
69.
METHODS AND SYSTEMS FOR IN-SITU DISCOVERY OF ILLUMINATION ANGLES IN SEMICONDUCTOR MEASUREMENTS
Methods and systems for compensating for uncertainty in illumination angle of incidence to enable accurate measurements of semiconductor structures are described herein. In one aspect, measurements are performed at one or more nominal angles of incidence, an actual angle of incidence corresponding to each measurement is estimated, and a value of a parameter of interest characterizing a measured structure is estimated based at least in part on the collected measurement data and the actual angle of incidence. In some examples, an actual angle of incidence is directly measured. In some other examples, an actual angle of incidence is estimated from measurement data collected over a range of nominal illumination angles of incidence. In some other examples, an actual angle of incidence with respect to a tilted structure is estimated from measurement data collected over a range of nominal illumination angles of incidence.
G01N 23/20 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using diffraction of the radiation by the materials, e.g. for investigating crystal structureInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materialsInvestigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by using reflection of the radiation by the materials
A process condition measurement device may include a substrate and a cover. The cover may cover the substrate to protect sensors and interconnects from a process environment, such as from corrosive gases, plasma, and radio frequency signals. The cover may uncover portions of the substrate to improve the thermo-mechanical behavior of the substrate. The cover may uncover portions of the substrate by blank-through holes which are offset from the sensors and interconnects. The cover may also uncover portions of the substrate by grooves formed through the cover. The process condition measurement device may also include a thin-film which is formed over the interconnects. The thin-film may protect interconnects from the process environment. The blank-through holes, the grooves, and the thin-films may be used separately or in combination.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
09 - Scientific and electric apparatus and instruments
Goods & Services
Computer software for scientific, academic, and industrial research, namely, computer software used with surface and optical profiling and profilometer instruments to acquire, visualize, analyze, and generate reports of surface topography and metrology measurement data.
A method of performing 3D metrology on a structure includes directing an electron beam onto a surface of the structure, capturing a first set of images of the structure at a first landing angle, capturing a second set of images of the structure at a second landing angle, the second landing angle being different from the first landing angle, and determining, by comparing the first set of images to the second set of images, at least one 3D parameter of the structure. The first set of images at the first landing angle and the second set of images at the second landing angle are captured in a single run of the electron beam across the surface of the structure.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
73.
METHODS OF CALIBRATING A LANDING ANGLE OF AN ELECTRON BEAM
A method of calibrating a landing angle of an electron beam includes fabricating a landing angle standard structure, determining a tilt angle of the landing angle standard structure relative a reference plane, scanning the landing angle standard structure to generate a plurality of images of the landing angle standard structure, determining a width difference between a first sidewall formed on the landing angle standard structure and a second sidewall formed on the landing structure, determining, using the width difference between the first sidewall and the second sidewall, a beam tilt of the electron beam, determining, by comparing the beam tilt of the electron beam to the tilt angle of the landing angle standard structure, the landing angle of the electron beam, and adjusting the electron beam, such that the landing angle of the electron beam is normal to a surface of the landing angle standard structure.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
74.
SYSTEM AND METHOD FOR OPTIMIZING THROUGH SILICON VIA OVERLAY
A wafer shape metrology system includes a wafer shape metrology sub-system configured to perform stress-free shape measurements on an active wafer, a carrier wafer, and a bonded device wafer. The active wafer includes functioning logic circuitry and the carrier wafer is electrically passive. The wafer shape metrology system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller is configured to receive stress-free shape measurements; determine overlay distortion between features on the active wafer and the carrier wafer; and convert the overlay distortion to a feed-forward correction for one or more lithographic scanners. The controller is also configured to determine a control range for a bonder or lithography scanner; predict an overlay distortion pattern; calculate an optimal control signature based on a minimal achievable overlay; and provide a feed-forward correction to the bonder or lithography scanner based on the calculated optimal control signature.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
75.
METHODS OF CALIBRATING A LANDING ANGLE OF AN ELECTRON BEAM
A method of calibrating a landing angle of an electron beam includes fabricating a landing angle standard structure, determining a tilt angle of the landing angle standard structure relative a reference plane, scanning the landing angle standard structure to generate a plurality of images of the landing angle standard structure, determining a width difference between a first sidewall formed on the landing angle standard structure and a second sidewall formed on the landing structure, determining, using the width difference between the first sidewall and the second sidewall, a beam tilt of the electron beam, determining, by comparing the beam tilt of the electron beam to the tilt angle of the landing angle standard structure, the landing angle of the electron beam, and adjusting the electron beam, such that the landing angle of the electron beam is normal to a surface of the landing angle standard structure.
A method of performing 3D metrology on a structure includes directing an electron beam onto a surface of the structure, capturing a first set of images of the structure at a first landing angle, capturing a second set of images of the structure at a second landing angle, the second landing angle being different from the first landing angle, and determining, by comparing the first set of images to the second set of images, at least one 3D parameter of the structure. The first set of images at the first landing angle and the second set of images at the second landing angle are captured in a single run of the electron beam across the surface of the structure.
G01B 15/04 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01L 21/66 - Testing or measuring during manufacture or treatment
09 - Scientific and electric apparatus and instruments
Goods & Services
Computer software for scientific, academic, and industrial research, namely, computer software used with surface and optical profiling and profilometer instruments to acquire, visualize, analyze, and generate reports of surface topography and metrology measurement data
09 - Scientific and electric apparatus and instruments
Goods & Services
Computer software for use in the printed circuit board industry, namely, computer software for automated printed circuit board design and construction planning; computer software for calculating and determining one or more appropriate printed circuit board design including sets of raw materials, layer configurations, and build parameters for manufacturing a specific printed circuit board; computer software for supporting PCB design optimization and manufacturing preparation.
79.
SYSTEM AND METHOD FOR TARGET CENTERING DETECTION IN OVERLAY METROLOGY
A system for target centering detection may be configured receive one or more acquisition images of a sample from an overlay metrology sub-system and determine, using a machine learning-based centering model, one or more stage correctables based on the received one or more acquisition images. The system may be configured to cause a sample stage of the overlay metrology sub-system to adjust a stage position based on the determined one or more stage correctables and receive one or more measurement images of the sample from the overlay metrology sub-system based on the adjusted stage position of the sample stage. The system may then be configured to determine one or more overlay measurements based on the received one or more measurement images.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
80.
AUTOMATED MODEL TERM SELECTION FOR MONITORING AND OPTIMIZED PROCESS CONTROL
Automated model term selection may use lasso regression for selecting model terms and a cross-validation scheme to optimize a regularization parameter of the lasso regression. A value of the regularization parameter may be selected by cross-validating the regularization parameter across a range of possible values using metrology measurements of a sample. A modeled correction may be generated based on the metrology measurements and the value of the regularization parameter using the regression. The regression may reduce a residual between the modeled correction and the metrology measurements. The model terms may include a sub-set of possible model terms up to a maximum order. Selecting the model terms from the possible model terms may prevent overfitting the modeled correction. The regularization parameter may control the number of the model terms which are selected.
G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
G01B 15/00 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
H01L 21/66 - Testing or measuring during manufacture or treatment
81.
AUTOMATED MODEL TERM SELECTION FOR MONITORING AND OPTIMIZED PROCESS CONTROL
Automated model term selection may use lasso regression for selecting model terms and a cross-validation scheme to optimize a regularization parameter of the lasso regression. A value of the regularization parameter may be selected by cross-validating the regularization parameter across a range of possible values using metrology measurements of a sample. A modeled correction may be generated based on the metrology measurements and the value of the regularization parameter using the regression. The regression may reduce a residual between the modeled correction and the metrology measurements. The model terms may include a sub-set of possible model terms up to a maximum order. Selecting the model terms from the possible model terms may prevent overfitting the modeled correction. The regularization parameter may control the number of the model terms which are selected.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
82.
SYSTEMS AND METHODS FOR DUAL-CONJUGATE IMAGING FOR OVERLAY METROLOGY
A metrology system for imaging samples such as semiconductor devices having metrology targets for measuring overlay. In embodiments, a multi-channel imaging system is configured to image two relevant spaced layers of a sample simultaneously at the same magnification using a common detector. In embodiments, the multi-channel imaging system includes a first imaging light for imaging the metrology target at a first depth, and a second imaging light for imaging the metrology target at a second depth, wherein the first and second imaging lights are generating by splitting collected light from the sample, and wherein first and second sub-images associated with the respective first and second imaging lights are used to generate metrology measurements.
A metrology system for imaging samples such as semiconductor devices having metrology targets for measuring overlay. In embodiments, a multi-channel imaging system is configured to image two relevant spaced layers of a sample simultaneously at the same magnification using a common detector. In embodiments, the multi-channel imaging system includes a first imaging light for imaging the metrology target at a first depth, and a second imaging light for imaging the metrology target at a second depth, wherein the first and second imaging lights are generating by splitting collected light from the sample, and wherein first and second sub-images associated with the respective first and second imaging lights are used to generate metrology measurements.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
84.
SIGNAL-TO-NOISE METRIC FOR ANNOTATION GUIDANCE, DL MODEL TUNABILITY, AND ROBUSTNESS
Methods and systems for determining a signal-to-noise metric for locations of interest on a specimen are provided. One or more statistics of non-defect signals from background patch images in a test image that are similar to a patch image of a location of interest in the test image are determined. The background patch images are found by searching a reference image for patch images that are similar to the location of interest patch image and finding the corresponding patch images in the test image. The signal of the location of interest in the test image and the one or more statistics are used to determine a signal-to-noise metric for the location of interest. The signal-to-noise metric can be used in applications such as defect annotation, deep learning (DL) model tunability, DL model repeatability, and novel defect detection.
G06V 10/98 - Detection or correction of errors, e.g. by rescanning the pattern or by human interventionEvaluation of the quality of the acquired patterns
A modeled correction may be generated based on metrology measurements and a weighting map. Residuals between the modeled correction and the metrology measurements may be weighted according to the weighting map. The modeled correction may be weighed via the weighting map according to a position at which the metrology measurements were generated on a sample. The modeled correction may include dose, focus, and overlay. A process tool may be controlled based on the modeled correction to control the dose, focus, and overlay.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
86.
SYSTEM AND METHOD FOR TARGET CENTERING DETECTION IN OVERLAY METROLOGY
A system for target centering detection may be configured receive one or more acquisition images of a sample from an overlay metrology sub-system and determine, using a machine learning-based centering model, one or more stage correctables based on the received one or more acquisition images. The system may be configured to cause a sample stage of the overlay metrology sub-system to adjust a stage position based on the determined one or more stage correctables and receive one or more measurement images of the sample from the overlay metrology sub-system based on the adjusted stage position of the sample stage. The system may then be configured to determine one or more overlay measurements based on the received one or more measurement images.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G06V 10/764 - Arrangements for image or video recognition or understanding using pattern recognition or machine learning using classification, e.g. of video objects
G06V 10/774 - Generating sets of training patternsBootstrap methods, e.g. bagging or boosting
87.
PROCESS CONTROL FOR DOSE, FOCUS, AND OVERLAY USING WEIGHTING MAPS BASED ON SPATIAL PROCESS KPIS
A modeled correction may be generated based on metrology measurements and a weighting map. Residuals between the modeled correction and the metrology measurements may be weighted according to the weighting map. The modeled correction may be weighed via the weighting map according to a position at which the metrology measurements were generated on a sample. The modeled correction may include dose, focus, and overlay. A process tool may be controlled based on the modeled correction to control the dose, focus, and overlay.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
88.
SIGNAL-TO-NOISE METRIC FOR ANNOTATION GUIDANCE, DL MODEL TUNABILITY, AND ROBUSTNESS
Methods and systems for determining a signal-to-noise metric for locations of interest on a specimen are provided. One or more statistics of non-defect signals from background patch images in a test image that are similar to a patch image of a location of interest in the test image are determined. The background patch images are found by searching a reference image for patch images that are similar to the location of interest patch image and finding the corresponding patch images in the test image. The signal of the location of interest in the test image and the one or more statistics are used to determine a signal-to-noise metric for the location of interest. The signal-to-noise metric can be used in applications such as defect annotation, deep learning (DL) model tunability, DL model repeatability, and novel defect detection.
09 - Scientific and electric apparatus and instruments
Goods & Services
Metrology apparatus for semiconductor manufacturing, namely, in-situ units for measuring thin film stress on semiconductor wafers during transport into and out of process chambers of physical vapor deposition (PVD) and chemical vapor deposition (CVD) tools; downloadable and recorded computer software for controlling, operating, and analyzing measurements from such metrology apparatus.
09 - Scientific and electric apparatus and instruments
Goods & Services
Computer software; computer software algorithms for semiconductor metrology and inspection; computer software for performing measurements of critical dimensions, and feature registration of semiconductor wafers and structures; computer software for use in optical and electron beam metrology systems; computer software provided as part of an integrated software suite for semiconductor manufacturing process control and analysis.
09 - Scientific and electric apparatus and instruments
Goods & Services
Computer software; computer software algorithms for semiconductor metrology and inspection; computer software for performing measurements of critical dimensions, and feature registration of semiconductor wafers and structures; computer software for use in optical and electron beam metrology systems; computer software provided as part of an integrated software suite for semiconductor manufacturing process control and analysis.
09 - Scientific and electric apparatus and instruments
Goods & Services
Metrology apparatus for semiconductor manufacturing, namely, in-situ units for measuring thin film stress on semiconductor wafers during transport into and out of process chambers of physical vapor deposition and chemical vapor deposition tools; downloadable and recorded computer software for controlling, operating, and analyzing measurements from in-situ units for measuring thin film stress on semiconductor wafers during transport into and out of process chambers of physical vapor deposition and chemical vapor deposition tools
A droplet generator may form a stable chain of droplets. The droplet generator may enhance the stability of the chain of droplets using a nozzle, a multi-stage skimmer, and/or gas-distribution ring. The nozzle may include a nozzle orifice and filter which may control a target-material flow forming a jet and subsequently coalescing into droplets. The skimmer may include apertures and/or capillaries which are arranged axially along the path of the chain of droplets to skim off a flow of ambient gas. The gas-distribution ring may include a set of holes for even gas distribution, improving the flow of ambient gas within an intermediate chamber. The droplet generator may also include gas, electrical, pressure-sensor, and/or temperature-sensor interfaces. The droplet generator may also include clamps to connect the intermediate chamber with the nozzle and skimmer.
A droplet generator may form a stable chain of droplets. The droplet generator may enhance the stability of the chain of droplets using a nozzle, a multi-stage skimmer, and/or gas-distribution ring. The nozzle may include a nozzle orifice and filter which may control a target-material flow forming a jet and subsequently coalescing into droplets. The skimmer may include apertures and/or capillaries which are arranged axially along the path of the chain of droplets to skim off a flow of ambient gas. The gas-distribution ring may include a set of holes for even gas distribution, improving the flow of ambient gas within an intermediate chamber. The droplet generator may also include gas, electrical, pressure-sensor, and/or temperature-sensor interfaces. The droplet generator may also include clamps to connect the intermediate chamber with the nozzle and skimmer.
A catoptric (mirror-based) optical system uses Scheimpflug optics and non-concentric optics to generate unobscured highly magnified images (e.g., >100x) in EUV reticle inspection tools. The Scheimpflug optics collect light beams from an object plane and directs the light beams along a first optical axis to generate an intermediate image at an intermediate image plane that is oblique to the object plane. The non-concentric optics redirect the light beams from the first optical axis to a second optical axis that is perpendicular to the intermediate image plane and generates a magnified image on a final image plane that is parallel to the intermediate image plane. The Scheimpflug optics may include a first mirror positioned to collect light beams reflected normal to the object plane and a second mirror positioned adjacent to the normal direction and configured to redirect the light beams onto the first optical axis.
An inspection system may be an EUV reticle inspection tool. The inspection system may include objective optics and imaging optics. The imaging optics may include pupil-relay optics. A first pupil-relay mirror of the pupil-relay optics may be extended into and retracted from the imaging path to enable imaging field images and pupil images on a detector. The pupil images may be used for measuring the intensity profile in pupil. Configurations of the pupil-relay optics may include the first pupil-relay mirror extending between a second and third objective mirrors of the objective optics or extending between fourth objective mirror of the objective optics and the detector.
A catoptric (mirror-based) optical system uses Scheimpflug optics and non-concentric optics to generate unobscured highly magnified images (e.g., >100×) in EUV reticle inspection tools. The Scheimpflug optics collect light beams from an object plane and directs the light beams along a first optical axis to generate an intermediate image at an intermediate image plane that is oblique to the object plane. The non-concentric optics redirect the light beams from the first optical axis to a second optical axis that is perpendicular to the intermediate image plane and generates a magnified image on a final image plane that is parallel to the intermediate image plane. The Scheimpflug optics may include a first mirror positioned to collect light beams reflected normal to the object plane and a second mirror positioned adjacent to the normal direction and configured to redirect the light beams onto the first optical axis.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 17/06 - Catoptric systems, e.g. image erecting and reversing system using mirrors only
A mirror assembly is disclosed. The mirror assembly includes an ellipsoid optical surface. The mirror assembly includes a hyperboloid optical surface, wherein the ellipsoid optical surface and the hyperboloid optical surface are arranged in a Wolter mirror configuration. The mirror assembly includes a substrate. The substrate includes a first portion, wherein the ellipsoid optical surface is located on the first portion of the substrate. The substrate includes a second portion, wherein the hyperboloid optical surface is located on the second portion of the substrate, wherein the first portion and the second portion form a monolithic body.
G02B 17/06 - Catoptric systems, e.g. image erecting and reversing system using mirrors only
G01N 23/04 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material
A mirror assembly is disclosed. The mirror assembly includes an ellipsoid optical surface. The mirror assembly includes a hyperboloid optical surface, wherein the ellipsoid optical surface and the hyperboloid optical surface are arranged in a Wolter mirror configuration. The mirror assembly includes a substrate. The substrate includes a first portion, wherein the ellipsoid optical surface is located on the first portion of the substrate. The substrate includes a second portion, wherein the hyperboloid optical surface is located on the second portion of the substrate, wherein the first portion and the second portion form a monolithic body.
G01N 21/25 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
G01N 21/33 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
An inspection system may be an EUV reticle inspection tool. The inspection system may include objective optics and imaging optics. The imaging optics may include pupil-relay optics. A first pupil-relay mirror of the pupil-relay optics may be extended into and retracted from the imaging path to enable imaging field images and pupil images on a detector. The pupil images may be used for measuring the intensity profile in pupil. Configurations of the pupil-relay optics may include the first pupil-relay mirror extending between a second and third objective mirrors of the objective optics or extending between fourth objective mirror of the objective optics and the detector.
