Methods and systems for measurements of complex semiconductor structures employing component measurement signals derived from optical, x-ray, or electron based measurements of the structure of interest are described herein. Component measurement signals capture the measurement response of a subset of a number of structural features of the semiconductor structure under measurement. In some embodiments, component measurement signals are employed in the context of a model based regression analysis to estimate values of one or more parameters of interest. In some embodiments, component measurement signals are employed to train machine learning based or library based measurement models. A training set of component measurement signals includes any combination of real signals and synthetically generated signals at present and prior process states from current and historical measurement targets and component targets. In a further aspect, loss functions and exit criteria for different component measurement models of a structure under measurement are defined differently.
Methods and systems for measurements of complex semiconductor structures employing component measurement signals derived from optical, x-ray, or electron based measurements of the structure of interest are described herein. Component measurement signals capture the measurement response of a subset of a number of structural features of the semiconductor structure under measurement. In some embodiments, component measurement signals are employed in the context of a model based regression analysis to estimate values of one or more parameters of interest. In some embodiments, component measurement signals are employed to train machine learning based or library based measurement models. A training set of component measurement signals includes any combination of real signals and synthetically generated signals at present and prior process states from current and historical measurement targets and component targets. In a further aspect, loss functions and exit criteria for different component measurement models of a structure under measurement are defined differently.
G01B 15/00 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
G01N 23/225 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques
An illumination system may include an optical homogenizer to homogenize a beam of light and a grating positioned in a path for the homogenized beam of light, to diffract light from the homogenized beam. The illumination system also includes a detector to receive light diffracted by the grating and to measure a power of the received light. The grating is disposed, for example, on an inner surface of the optical homogenizer or on a surface of a focusing mirror. Alternatively, the grating is disposed on the surface of the focusing mirror and the optical homogenizer is omitted from the illumination system.
G01J 1/42 - Photométrie, p. ex. posemètres photographiques en utilisant des détecteurs électriques de radiations
G02B 27/09 - Mise en forme du faisceau, p. ex. changement de la section transversale, non prévue ailleurs
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An illumination system may include an optical homogenizer to homogenize a beam of light and a grating positioned in a path for the homogenized beam of light, to diffract light from the homogenized beam. The illumination system also includes a detector to receive light diffracted by the grating and to measure a power of the received light. The grating is disposed, for example, on an inner surface of the optical homogenizer or on a surface of a focusing mirror. Alternatively, the grating is disposed on the surface of the focusing mirror and the optical homogenizer is omitted from the illumination system.
An overlay metrology system is disclosed. The overlay metrology system may include a controller with one or more processors. The processors may be configured to execute program instructions causing the processors to receive pupil images of collected light from an overlay target and receive a known phase distribution to be introduced to an illumination beam directed at the overlay target. The processors may model an intensity function relating the pupil images, the known phase distribution, and one or more decentered shift parameters of structures of the overlay target. The processors may fit the pupil images to the intensity function depending on the known phase distribution and the decentered shift parameters. The processors may generate an overlay measurement based on the fit.
A system and method for pixel-to-design alignment for inspection of a dynamic random-access memory wafer are disclosed. The system includes a controller configured to communicate with an inspection sub-system. One or more processors of the controller are configured to receive an input frame from the inspection sub-system, apply a bandpass filter to the input frame to generate a band-passed image, determine a one-dimensional projection profile along a first direction and a second direction of the band-passed image, determine a local range for a portion of the projection profiles, determine a threshold value for the local range which creates two or more distinct regions, identify one or more conjunction locations of two or more non-repeating patterns based on the two or more distinct regions, and obtain a location for one or more pixel-to-design alignment targets based on the one or more conjunction locations.
An overlay metrology system is disclosed. The overlay metrology system may include a controller with one or more processors. The processors may be configured to execute program instructions causing the processors to receive pupil images of collected light from an overlay target and receive a known phase distribution to be introduced to an illumination beam directed at the overlay target. The processors may model an intensity function relating the pupil images, the known phase distribution, and one or more decentered shift parameters of structures of the overlay target. The processors may fit the pupil images to the intensity function depending on the known phase distribution and the decentered shift parameters. The processors may generate an overlay measurement based on the fit.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
8.
SYSTEM AND METHOD OF FINDING PIXEL-TO-DESIGN TARGET FOR DRAM INSPECTION
A system and method for pixel-to-design alignment for inspection of a dynamic random-access memory wafer are disclosed. The system includes a controller configured to communicate with an inspection sub-system. One or more processors of the controller are configured to receive an input frame from the inspection sub-system, apply a bandpass filter to the input frame to generate a band-passed image, determine a one-dimensional projection profile along a first direction and a second direction of the band-passed image, determine a local range for a portion of the projection profiles, determine a threshold value for the local range which creates two or more distinct regions, identify one or more conjunction locations of two or more non-repeating patterns based on the two or more distinct regions, and obtain a location for one or more pixel-to-design alignment targets based on the one or more conjunction locations.
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
09 - Appareils et instruments scientifiques et électriques
Produits et services
Apparatus and instruments for physics; Diagnostic equipment for research laboratory use; Marine navigation equipment and instruments; Surveying apparatus and instruments; Photographic cameras; Optical instruments; Weighing machines; Measures; Signal lanterns; Computer monitors; Life saving apparatus and equipment; Teaching apparatus and equipment; Cinematographic cameras; Electric installations for the remote control of industrial operations; Power converters; Electric apparatus for commutation; Regulating apparatus, electric; Pneumatic-electrical control device; Accumulators, electric; Recorders for sound and image medias; Sound transmitting apparatus; Sound reproduction apparatus; Central Processing Unit (CPU) for information, data, sounds and images processing; Blank magnetic data carriers; Recordable blank DVD discs; Mechanisms for coin-operated apparatus; Cash registers; Calculating machines; Data processing apparatus; Computers; Computer software, recorded; Computer software applications, downloadable; Fire-extinguishing apparatus; Monocrystalline silicon; Electronic chip; Carbon material; Transistors; electricity control panels ; Audio and video compact discs
09 - Appareils et instruments scientifiques et électriques
Produits et services
Apparatus and instruments for physics; Diagnostic equipment for research laboratory use; Marine navigation equipment and instruments; Surveying apparatus and instruments; Photographic cameras; Optical instruments; Weighing machines; Measures; Signal lanterns; Computer monitors; Life saving apparatus and equipment; Teaching apparatus and equipment; Cinematographic cameras; Electric installations for the remote control of industrial operations; Power converters; Electric apparatus for commutation; Regulating apparatus, electric; Pneumatic-electrical control device; Accumulators, electric; Recorders for sound and image medias; Sound transmitting apparatus; Sound reproduction apparatus; Central Processing Unit (CPU) for information, data, sounds and images processing; Blank magnetic data carriers; Recordable blank DVD discs; Mechanisms for coin-operated apparatus; Cash registers; Calculating machines; Data processing apparatus; Computers; Computer software, recorded; Computer software applications, downloadable; Fire-extinguishing apparatus; Monocrystalline silicon; Electronic chip; Carbon material; Transistors; electricity control panels ; Audio and video compact discs
09 - Appareils et instruments scientifiques et électriques
Produits et services
Apparatus and instruments for physics; Diagnostic equipment for research laboratory use; Marine navigation equipment and instruments; Surveying apparatus and instruments; Photographic cameras; Optical instruments; Weighing machines; Measures; Signal lanterns; Computer monitors; Life saving apparatus and equipment; Teaching apparatus and equipment; Cinematographic cameras; Electric installations for the remote control of industrial operations; Power converters; Electric apparatus for commutation; Regulating apparatus, electric; Pneumatic-electrical control device; Accumulators, electric; Recorders for sound and image medias; Sound transmitting apparatus; Sound reproduction apparatus; Central Processing Unit (CPU) for information, data, sounds and images processing; Blank magnetic data carriers; Recordable blank DVD discs; Mechanisms for coin-operated apparatus; Cash registers; Calculating machines; Data processing apparatus; Computers; Computer software, recorded; Computer software applications, downloadable; Fire-extinguishing apparatus; Monocrystalline silicon; Electronic chip; Carbon material; Transistors; electricity control panels ; Audio and video compact discs
09 - Appareils et instruments scientifiques et électriques
Produits et services
Apparatus and instruments for physics; Diagnostic equipment for research laboratory use; Marine navigation equipment and instruments; Surveying apparatus and instruments; Photographic cameras; Optical instruments; Weighing machines; Measures; Signal lanterns; Computer monitors; Life saving apparatus and equipment; Teaching apparatus and equipment; Cinematographic cameras; Electric installations for the remote control of industrial operations; Power converters; Electric apparatus for commutation; Regulating apparatus, electric; Pneumatic-electrical control device; Accumulators, electric; Recorders for sound and image medias; Sound transmitting apparatus; Sound reproduction apparatus; Central Processing Unit (CPU) for information, data, sounds and images processing; Blank magnetic data carriers; Recordable blank DVD discs; Mechanisms for coin-operated apparatus; Cash registers; Calculating machines; Data processing apparatus; Computers; Computer software, recorded; Computer software applications, downloadable; Fire-extinguishing apparatus; Monocrystalline silicon; Electronic chip; Carbon material; Transistors; electricity control panels ; Audio and video compact discs
13.
Supercritical Fluid Cleaning for Components in Optical or Electron Beam Systems
To clean components in semiconductor manufacturing equipment, such as an optical system or an electron beam system, a component is heated in a chamber. A supercritical fluid formulation is applied to the component in the chamber, which removes molecular and/or particulate contaminants. The supercritical fluid formulation can include one or more of carbon dioxide, water, HCF, alkane, alkene, nitrous oxide, methanol, ethanol, or acetone.
09 - Appareils et instruments scientifiques et électriques
Produits et services
Apparatus and instruments for physics; Diagnostic equipment for research laboratory use; Marine navigation equipment and instruments; Surveying apparatus and instruments; Photographic cameras; Optical instruments; Weighing machines; Measures; Signal lanterns; Computer monitors; Life saving apparatus and equipment; Teaching apparatus and equipment; Cinematographic cameras; Electric installations for the remote control of industrial operations; Power converters; Electric apparatus for commutation; Regulating apparatus, electric; Pneumatic-electrical control device; Accumulators, electric; Recorders for sound and image medias; Sound transmitting apparatus; Sound reproduction apparatus; Central Processing Unit (CPU) for information, data, sounds and images processing; Blank magnetic data carriers; Recordable blank DVD discs; Mechanisms for coin-operated apparatus; Cash registers; Calculating machines; Data processing apparatus; Computers; Computer software, recorded; Computer software applications, downloadable; Fire-extinguishing apparatus; Monocrystalline silicon; Electronic chip; Carbon material; Transistors; electricity control panels ; Audio and video compact discs
A method for in-situ swath positioning includes generating an in-situ swath positioning database by selecting a plurality of high contrast alignment targets from a set of pixel-to-design alignment images within a pixel-to-design alignment database. The method includes performing a first runtime swath of a plurality of runtime dies, where each runtime frame associated with the first runtime swath includes a high contrast alignment target from the in-situ swath positioning database. The method may include determining one or more offset values for each runtime die based on the plurality of high contrast alignment targets and one or more runtime frames associated with the first runtime swath. The one or more offset values may include an x-offset value and a y-offset value for each die. The method may include adjusting an initial stage position based on the determined one or more offset values prior to performing a second runtime swath.
ABSTRACT A substrate is mounted on a chuck in a chamber of an EUV tool. An illumination aperture in the chamber provides a beam of light to illuminate the substrate on the chuck. The beam of light includes extreme ultraviolet (EUV) in-band (IB) light and out-of-band (OOB) light The OOB light has longer wavelengths than the EUV IB light. A beam-narrowing aperture in the chamber, which is switchable into and out of a path for the beam of light, selectively narrows the beam oflight to illuminate the substrate. A band-selection filter filters out the OOB light or the EUV IB light. Imaging optics in the chamber relay light from the substrate to an imaging plane. A grating spectrally disperses the light from the substrate. A sensor detects the light from the substrate as relayed by the imaging optics and spectrally dispersed by the grating.
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 21/956 - Inspection de motifs sur la surface d'objets
G01N 21/33 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière ultraviolette
An assembly is in a path of a beam of light, which has a first and second spectral components at different wavelengths. A first spectral component and a second spectral component of the beam of light are projected through an aperture. A sensor is disposed around the aperture to only receive a second spectral component of the beam of light. A position of the beam of light relative to the aperture can be determined using information from the sensor.
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 21/956 - Inspection de motifs sur la surface d'objets
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
A method for in-situ swath positioning includes generating an in-situ swath positioning database by selecting a plurality of high contrast alignment targets from a set of pixel-to-design alignment images within a pixel-to-design alignment database. The method includes performing a first runtime swath of a plurality of runtime dies, where each runtime frame associated with the first runtime swath includes a high contrast alignment target from the in-situ swath positioning database. The method may include determining one or more offset values for each runtime die based on the plurality of high contrast alignment targets and one or more runtime frames associated with the first runtime swath. The one or more offset values may include an x-offset value and a y-offset value for each die. The method may include adjusting an initial stage position based on the determined one or more offset values prior to performing a second runtime swath.
G06T 7/33 - Détermination des paramètres de transformation pour l'alignement des images, c.-à-d. recalage des images utilisant des procédés basés sur les caractéristiques
A method for semiconductor metrology includes depositing first and second film layers on a substrate, patterning the layers to define a first target including a first feature in the first layer and a second feature in the second layer adjacent to the first feature, and a second target on the substrate including a first part, which is identical to the first target, and a second part adjacent to the first part such that the second overlay target has rotational symmetry of 180° around a normal to the substrate. The method further includes capturing and processing a first image of the second target to compute a calibration function based on the first and second parts of the target, and capturing and processing a second image of the first target while applying the calibration function to estimate an overlay error between the first and second film layers at the first location.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
09 - Appareils et instruments scientifiques et électriques
Produits et services
Imaging metrology tools, namely, scientific and electronic imaging instruments for inspecting and characterizing physical properties, including micro-bump arrays, of semiconductors, integrated circuits, and microelectronics, and their packaging; Computer hardware and software for testing, inspecting, characterizing, and predicting physical and electrical properties of semiconductors, integrated circuits, and microelectronics; Optical inspection apparatus for inspection of semiconductor materials, namely, semiconductor wafers, semiconductor panels, and their packaging; Electronic imaging platforms in the field of inspection of semiconductor materials, namely, semiconductor wafers, semiconductor panels, and their packaging
21.
Methods And Systems For Spectral Measurements Based On Perturbed Spectra
Methods and systems for measuring structural parameters characterizing a measurement target based on changes in measurement signal values due to one or more perturbations of an effective illumination angle of incidence on the measurement target are presented herein. In some examples, a measurement model estimates values of the structural parameters based on the changes in measurement signal values. In some examples, at least one derivative of detected measurement signals with respect to effective illumination angle is determined, and values of the structural parameters are estimated based on the at least one derivative. In some examples, values of one or more tunable measurement model parameters are estimated based on at least one derivative. In some examples, the fitting performance of a measurement model is quantified based on measurements performed at both unperturbed and perturbed orientations of a structure under measurement with respect to the illumination beam.
An assembly is in a path of a beam of light, which has a first and second spectral components at different wavelengths. A first spectral component and a second spectral component of the beam of light are projected through an aperture. A sensor is disposed around the aperture to only receive a second spectral component of the beam of light. A position of the beam of light relative to the aperture can be determined using information from the sensor.
G01N 21/01 - Dispositions ou appareils pour faciliter la recherche optique
G02B 26/08 - Dispositifs ou dispositions optiques pour la commande de la lumière utilisant des éléments optiques mobiles ou déformables pour commander la direction de la lumière
G05D 3/12 - Commande de la position ou de la direction utilisant la contre-réaction
23.
In-Situ In-Band and Out-of-Band Spectral Measurement for EUV Tools
A substrate is mounted on a chuck in a chamber of an EUV tool. An illumination aperture in the chamber provides a beam of light to illuminate the substrate on the chuck. The beam of light includes extreme ultraviolet (EUV) in-band (IB) light and out-of-band (OOB) light. The OOB light has longer wavelengths than the EUV IB light. A beam-narrowing aperture in the chamber, which is switchable into and out of a path for the beam of light, selectively narrows the beam of light to illuminate the substrate. A band-selection filter filters out the OOB light or the EUV IB light. Imaging optics in the chamber relay light from the substrate to an imaging plane. A grating spectrally disperses the light from the substrate. A sensor detects the light from the substrate as relayed by the imaging optics and spectrally dispersed by the grating.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A system for generating a motion profile is disclosed. The system includes a controller. The controller receives a target position for a stage. The controller generates a motion profile for transitioning the stage to the target position. The motion profile includes an acceleration profile having one or more segments that vary as a function of time. The controller modifies the segments of the acceleration profile by: determining a midpoint for each segment, determining a reference line for each segment with a slope that is greater than the corresponding segment, dividing each segment into a first sub-segment and a second sub-segment, defining the first sub-segment as a function such that a starting point is tangential to a first axis and an ending point is tangential to the reference line, defining the second sub-segment by rotating the first sub-segment about the midpoint, and actuating the stage in response to the motion profile.
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A system for generating a motion profile is disclosed. The system includes a controller. The controller receives a target position for a stage. The controller generates a motion profile for transitioning the stage to the target position. The motion profile includes an acceleration profile having one or more segments that vary as a function of time. The controller modifies the segments of the acceleration profile by: determining a midpoint for each segment, determining a reference line for each segment with a slope that is greater than the corresponding segment, dividing each segment into a first sub-segment and a second sub-segment, defining the first sub-segment as a function such that a starting point is tangential to a first axis and an ending point is tangential to the reference line, defining the second sub-segment by rotating the first sub-segment about the midpoint, and actuating the stage in response to the motion profile.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
A workpiece is measured using multiple-pass spectroscopic ellipsometry and multi-wavelength Raman spectroscopy, which may be performed in the same system. These measurements are combined to form combined measured data. A stress measurement of the workpiece is determined using the combined measured data. The stress measurement can be determined using a model or a machine learning algorithm.
Methods and systems for determining random variation in one or more structures on a specimen are provided. One method includes determining characteristic(s) of output generated by an output acquisition subsystem for structure(s) formed on a specimen and simulating the characteristic(s) of the output with initial parameter values for the structure(s). The method also includes determining parameter values of the structure(s) formed on the specimen as the initial parameter values that resulted in the simulated characteristic(s) that best match the determined characteristic(s). The determined parameter values are responsive to random variation in parameter(s) of the structure(s) on the specimen.
G01N 23/20 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffraction de la radiation par les matériaux, p. ex. pour rechercher la structure cristallineRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffusion de la radiation par les matériaux, p. ex. pour rechercher les matériaux non cristallinsRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
28.
TRANSISTOR CHANNEL STRESS AND MOBILITY METROLOGY USING MULTIPASS SPECTROSCOPIC ELLIPSOMETRY AND RAMAN JOINT MEASUREMENT
A workpiece is measured using multiple-pass spectroscopic ellipsometry and multi-wavelength Raman spectroscopy, which may be performed in the same system. These measurements are combined to form combined measured data. A stress measurement of the workpiece is determined using the combined measured data. The stress measurement can be determined using a model or a machine learning algorithm.
G01L 1/24 - Mesure des forces ou des contraintes, en général en mesurant les variations des propriétés optiques du matériau quand il est soumis à une contrainte, p. ex. par l'analyse des contraintes par photo-élasticité
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
29.
METROLOGY METHOD OF CALIBRATING AND MONITORING RADIATION IN EUV LITHOGRAPHIC SYSTEMS
An instrumented substrate may provide a metrology platform for monitoring extreme ultraviolet (EUV) radiation in an image plane of a EUV lithography tool. The instrumented substrate may include in-band dosage sensors. The in-band dosage sensors may generate dosage measurements corresponding to the illumination which is in-band. The instrumented substrate may also include out-of-band dosage sensors and in-band scattered dosage sensors. The instrumented substrate may be housed within a front opening unified pod (FOUP) of a system.
G01N 21/33 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière ultraviolette
Methods and systems for determining random variation in one or more structures on a specimen are provided. One method includes determining characteristic(s) of output generated by an output acquisition subsystem for structure(s) formed on a specimen and simulating the characteristic(s) of the output with initial parameter values for the structure(s). The method also includes determining parameter values of the structure(s) formed on the specimen as the initial parameter values that resulted in the simulated characteristic(s) that best match the determined characteristic(s). The determined parameter values are responsive to random variation in parameter(s) of the structure(s) on the specimen.
G01N 23/20008 - Détails de construction des appareils d’analyse, p. ex. caractérisés par la source de rayons X, le détecteur ou le système optique à rayons XLeurs accessoiresPréparation d’échantillons à cet effet
G06F 17/18 - Opérations mathématiques complexes pour l'évaluation de données statistiques
G06N 20/20 - Techniques d’ensemble en apprentissage automatique
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
31.
Metrology in the Presence of CMOS Under Array (CUA) Structures Utilizing Model-Less Machine Learning
A system may include a controller including one or more processors configured to execute program instructions causing the one or more processors to implement a measurement recipe by: receiving optical measurement data for training samples including complementary metal-oxide-semiconductor under array (CuA) devices, wherein the CuA devices include CMOS structures disposed beneath periodic memory array structures; receiving reference data for the training samples, wherein the reference data includes measurements of geometric parameters of the CuA devices; training a machine learning model with the optical measurement data for the training samples and the reference data; receiving optical measurement data for test samples including CuA devices; and determining one or more measurements of the geometric parameters of the CuA devices on the test samples using the machine learning model with the optical measurement data for the test samples.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
An overlay metrology system may receive images of an overlay target on a sample, where the overlay target includes Moiré structures in which first-layer features and second-layer features partially overlap, where overlap regions include regions of overlap between the first-layer and second-layer features, where non-overlap regions include regions of non-overlap between the first-layer and second-layer features. The system may further, determine a coarse overlay measurement based at least in part on the one or more non-overlap regions of the one or more images, determine a fine overlay measurement based at least in part on the one or more overlap regions of the one or more images, and generate an output overlay measurement based on the coarse overlay measurement and the fine overlay measurement.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01B 15/08 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons pour mesurer la rugosité ou l'irrégularité des surfaces
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Shape-changed induced stress for a target thickness of a bonded wafer can be determined. A bonding strength for the bonded wafer can then be determined using the shape-changed induced stress. Bonding parameters can be determined for the bonding strength. The bonding strength that is determined can be compared with an inline bonding strength for formation of the bonded wafer.
H01L 21/18 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives les dispositifs ayant des barrières de potentiel, p. ex. une jonction PN, une région d'appauvrissement ou une région de concentration de porteurs de charges les dispositifs ayant des corps semi-conducteurs comprenant des éléments du groupe IV du tableau périodique, ou des composés AIIIBV, avec ou sans impuretés, p. ex. des matériaux de dopage
H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
An image sensor includes a p-type silicon layer, a silicon layer disposed on the p-type silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a boron layer disposed on the p-type SiGe layer, and an anti-reflective coating disposed on the boron layer. A trench can be formed in the image sensor such that the boron layer is disposed in the trench.
A measurement system may include two or more sets of optical sub-systems to simultaneously generate measurement data on two or more samples, a coarse translation stage providing motion along a plane, two or more fine translation stages disposed on the coarse translation stage arranged in a common pattern as the two or more sets of optical sub-systems, where each of the fine translation stages provides motion along the plane and is arranged to position one of the two or more samples under one of the two or more sets of optical sub-systems. The system may further include a controller to independently direct each of the fine translation stages and the associated one of the optical sub-systems to generate measurement data for the respective samples, and generate one or more measurements for the samples based on the associated measurement data.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
36.
METROLOGY METHOD OF CALIBRATING AND MONITORING RADIATION IN EUV LITHOGRAPHIC SYSTEMS
An instrumented substrate may provide a metrology platform for monitoring extreme ultraviolet (EUV) radiation in an image plane of a EUV lithography tool. The instrumented substrate may include in-band dosage sensors. The in-band dosage sensors may generate dosage measurements corresponding to the illumination which is in-band. The instrumented substrate may also include out-of-band dosage sensors and in-band scattered dosage sensors. The instrumented substrate may be housed within a front opening unified pod (FOUP) of a system.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
Shape-changed induced stress for a target thickness of a bonded wafer can be determined. A bonding strength for the bonded wafer can then be determined using the shape-changed induced stress. Bonding parameters can be determined for the bonding strength. The bonding strength that is determined can be compared with an inline bonding strength for formation of the bonded wafer.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
38.
SINGLE WAFER ORIENTATION TOOL-INDUCED SHIFT CLEANING
A metrology system may include a spectroscopic metrology sub-system and a controller, the controller including one or more processors configured to execute program instructions configured to cause the one or more processors to: generate a tool-induced shift (TIS) model of a training sample by the metrology sub-system comprising: receiving training data from metrology measurements of the training sample, the training data comprising spectral data associated with at least one off-diagonal Mueller matrix element generated by one or more first measurements of the training sample at a first azimuthal angle and one or more second measurements of the training sample at a second azimuthal angle, deriving overlay spectra data and TIS spectra data from the training data, decomposing the overlay spectra data and the TIS spectra data, and inferring a TIS signature for the training sample; and to remove the TIS signature from a test sample.
G01B 11/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur
G01B 11/26 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes
An overlay metrology system may receive images of an overlay target on a sample, where the overlay target includes Moiré structures in which first-layer features and second-layer features partially overlap, where overlap regions include regions of overlap between the first-layer and second-layer features, where non-overlap regions include regions of non-overlap between the first-layer and second-layer features. The system may further, determine a coarse overlay measurement based at least in part on the one or more non-overlap regions of the one or more images, determine a fine overlay measurement based at least in part on the one or more overlap regions of the one or more images, and generate an output overlay measurement based on the coarse overlay measurement and the fine overlay measurement.
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A metrology system may include a spectroscopic metrology sub-system and a controller, the controller including one or more processors configured to execute program instructions configured to cause the one or more processors to: generate a tool-induced shift (TIS) model of a training sample by the metrology sub-system comprising: receiving training data from metrology measurements of the training sample, the training data comprising spectral data associated with at least one off-diagonal Mueller matrix element generated by one or more first measurements of the training sample at a first azimuthal angle and one or more second measurements of the training sample at a second azimuthal angle, deriving overlay spectra data and TIS spectra data from the training data, decomposing the overlay spectra data and the TIS spectra data, and inferring a TIS signature for the training sample; and to remove the TIS signature from a test sample.
An image sensor includes a p-type silicon layer, a silicon layer disposed on the p-type silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a boron layer disposed on the p-type SiGe layer, and an anti-reflective coating disposed on the boron layer. A trench can be formed in the image sensor such that the boron layer is disposed in the trench.
A measurement system may include two or more sets of optical sub-systems to simultaneously generate measurement data on two or more samples, a coarse translation stage providing motion along a plane, two or more fine translation stages disposed on the coarse translation stage arranged in a common pattern as the two or more sets of optical sub-systems, where each of the fine translation stages provides motion along the plane and is arranged to position one of the two or more samples under one of the two or more sets of optical sub-systems. The system may further include a controller to independently direct each of the fine translation stages and the associated one of the optical sub-systems to generate measurement data for the respective samples, and generate one or more measurements for the samples based on the associated measurement data.
Methods and systems for measuring structural parameters characterizing a measurement target based on changes in measurement signal values due to one or more perturbations of an effective illumination angle of incidence on the measurement target are presented herein. In some examples, a measurement model estimates values of the structural parameters based on the changes in measurement signal values. In some examples, at least one derivative of detected measurement signals with respect to effective illumination angle is determined, and values of the structural parameters are estimated based on the at least one derivative. In some examples, values of one or more tunable measurement model parameters are estimated based on at least one derivative. In some examples, the fitting performance of a measurement model is quantified based on measurements performed at both unperturbed and perturbed orientations of a structure under measurement with respect to the illumination beam.
G01N 21/84 - Systèmes spécialement adaptés à des applications particulières
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
G01N 23/225 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques
G01B 11/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur
G01B 15/00 - Dispositions pour la mesure caractérisées par l'utilisation d'ondes électromagnétiques ou de radiations de particules, p. ex. par l'utilisation de micro-ondes, de rayons X, de rayons gamma ou d'électrons
A measurement system is disclosed. The measurement system may include a controller including processors configured to execute program instructions causing the processors to: receive recipes including instructions for characterizing the set of samples with an optical sub-system, wherein the recipes include thicknesses for the set of samples; receive on-tool thickness measurements for the set of samples from the sample measurement sub-system; validate the thicknesses of the set of samples provided by the recipes with the on-tool thickness measurements generated by a sample measurement sub-system configured to measure a thickness of at least one sample from the set of samples prior to characterization by the optical sub-system; provide the focus adjustment system with sample-specific hard stop positions based on the validated thicknesses of the set of samples; and generate one or more measurements of the set of samples based on measurement data from the optical sub-system.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
An inspection system may receive first measurement data of training samples after a first process step with an in-line measurement sub-system, where the first process step is prior to fabrication of a test feature on the one or more training samples; and receive second measurement data of the test feature after a second process step, where the second process step is after fabrication of the test feature. An inspection system may determine delta metrics associated with the first and second measurement data for the test feature. An inspection system may generate a measurement model for determining metrology measurements of the test feature based on at least one of the second measurement data or the delta metrics. An inspection system may determine values of the metrology measurements for additional instances of the test feature based on at least one of the second measurement data or the delta metrics.
G01N 21/956 - Inspection de motifs sur la surface d'objets
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 23/083 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et mesurant l'absorption le rayonnement consistant en rayons X
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
An inspection system may receive first measurement data of training samples after a first process step with an in-line measurement sub-system, where the first process step is prior to fabrication of a test feature on the one or more training samples; and receive second measurement data of the test feature after a second process step, where the second process step is after fabrication of the test feature. An inspection system may determine delta metrics associated with the first and second measurement data for the test feature. An inspection system may generate a measurement model for determining metrology measurements of the test feature based on at least one of the second measurement data or the delta metrics. An inspection system may determine values of the metrology measurements for additional instances of the test feature based on at least one of the second measurement data or the delta metrics.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
A system includes a stator, and a first carrier and a second carrier disposed over a horizontal surface of the stator. A plurality of electromagnetic coils are disposed in an array beneath the horizontal surface. The first carrier and the second carrier each include plurality of magnets arranged in an array and are configured to support a first substrate and a second substrate, respectively. A controller is configured to individually energize each of the plurality of electromagnetic coils, which causes the first carrier and the second carrier to levitate above the horizontal surface and independently move in a loop relative to the horizontal surface. The plurality of electromagnetic coils can apply a differential force to adjust a planar alignment of the first substrate or the second substrate, and a metrology tool can take one or more measurements of the first substrate or the second substrate.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01N 21/17 - Systèmes dans lesquels la lumière incidente est modifiée suivant les propriétés du matériau examiné
48.
DEFECT SYNTHESIS AND DETECTION VIA DEFECT GENERATIVE PRE-TRAINED TRANSFORMER FOR SEMICONDUCTOR APPLICATIONS
Methods and systems for determining information for a specimen are provided. One system includes a computer subsystem and one or more components executed by the computer subsystem. The one or more components include a pre-trained defect generative pre-trained transformer (DefectGPT) encoder configured for determining information for a specimen based on one or more inputs specific to the specimen. The computer subsystem is configured for inputting the one or more inputs into the pre-trained DefectGPT encoder.
A measurement system is disclosed. The measurement system may include a controller including processors configured to execute program instructions causing the processors to: receive recipes including instructions for characterizing the set of samples with an optical sub-system, wherein the recipes include thicknesses for the set of samples; receive on-tool thickness measurements for the set of samples from the sample measurement sub-system; validate the thicknesses of the set of samples provided by the recipes with the on-tool thickness measurements generated by a sample measurement sub-system configured to measure a thickness of at least one sample from the set of samples prior to characterization by the optical sub-system; provide the focus adjustment system with sample-specific hard stop positions based on the validated thicknesses of the set of samples; and generate one or more measurements of the set of samples based on measurement data from the optical sub-system.
G01B 11/06 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur pour mesurer l'épaisseur
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
50.
MONITORING OF HF IN BUFFERED HYDROFLUORIC ACID (BHF)
The disclosed subject matter relates to method for determining HF concentration in highly buffered hydrofluoric acid (BHF), with e.g., <1000 ppm HF and >15 wt. % NH4F, through measurement of etched Si concentration and NH4F, which demonstrates a substantial accuracy and reliability in detection.
G01N 21/67 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité électriquement, p. ex. par électroluminescence en utilisant des arcs électriques ou des décharges électriques
G01N 21/359 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge proche
51.
MONITORING OF HF IN BUFFERED HYDROFLUORIC ACID (BHF)
G01N 21/359 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge proche
G01N 21/73 - Systèmes dans lesquels le matériau analysé est excité de façon à ce qu'il émette de la lumière ou qu'il produise un changement de la longueur d'onde de la lumière incidente excité thermiquement en utilisant des brûleurs ou torches à plasma
Methods and systems for determining information for a specimen are provided. One system includes a computer subsystem and one or more components executed by the computer subsystem. The one or more components include a pre-trained defect generative pre-trained transformer (DefectGPT) encoder configured for determining information for a specimen based on one or more inputs specific to the specimen. The computer subsystem is configured for inputting the one or more inputs into the pre-trained DefectGPT encoder.
An inspection system for electronic components includes a platform. The inspection system also includes a carrier for supporting an electronic component and moving the electronic component to different locations about the platform. The inspection system further includes an inspection device positioned to inspect the electronic component for a defect when the electronic component is not supported by the carrier. The inspection system yet further includes a cleaning sub-system for cleaning the electronic component with no contact between the cleaning sub-system and the electronic component.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
A system includes a stator, and a first carrier and a second carrier disposed over a horizontal surface of the stator. A plurality of electromagnetic coils are disposed in an array beneath the horizontal surface. The first carrier and the second carrier each include plurality of magnets arranged in an array and are configured to support a first substrate and a second substrate, respectively. A controller is configured to individually energize each of the plurality of electromagnetic coils, which causes the first carrier and the second carrier to levitate above the horizontal surface and independently move in a loop relative to the horizontal surface. The plurality of electromagnetic coils can apply a differential force to adjust a planar alignment of the first substrate or the second substrate, and a metrology tool can take one or more measurements of the first substrate or the second substrate.
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H02K 1/18 - Moyens de montage ou de fixation des parties magnétiques fixes sur ou aux structures constituant le stator
H02K 1/2783 - Aimants montés en surfaceAimants sertis le noyau étant muni d’aimants disposés en réseaux de Halbach
55.
ENHANCED MODES FOR SCANNING ACOUSTIC MICROSCOPE INSPECTION IN SEMICONDUCTOR INSPECTION
A scanning acoustic microscope system may include one or more measurement assemblies, wherein a respective one of the measurement assemblies comprises a transducer and a receiver, wherein the receiver of at least one of the one or more measurement assemblies comprises a multipixel sensor to simultaneously generate sensor data for multiple locations associated with a sample. The tool may include a stage configured to scan the sample for measurement by the one or more measurement assemblies. The tool may include a controller communicatively coupled to the one or more measurement assemblies, wherein the controller includes one or more processors configured to execute program instructions causing the processors to implement a metrology recipe by: receiving the sensor data from the one or more measurement assemblies while the sample is scanned by the stage; and generating one or more measurements for the sample based on the sensor data.
A transfer head may include a plurality of brackets and a plurality of front pickup shafts and rear pickup shafts slidably coupled to the plurality of brackets along a first axis, wherein at least one of the plurality of front pickup shafts and the rear pickup shafts are couplable to a pick-up gear. The transfer head may include a first axis pitch-change sub-system configured to slide the plurality of front pickup shafts relative to the plurality of rear pickup shafts. The transfer head may include a second axis pitch-change sub-system comprising: a cam comprising a plurality of cam slots configured to engage the plurality of brackets, wherein a movement of the cam causes a change in pitch between the plurality of brackets and a corresponding change in pitch between the plurality of the front pickup shafts and the rear pickup shafts along the second axis.
B25J 15/06 - Têtes de préhension avec moyens de retenue magnétiques ou fonctionnant par succion
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
57.
SPECTROSCOPIC ELLIPSOMETRY WITH DETECTOR RESOLVED NUMERICAL APERTURE FOR DEEP STRUCTURE METROLOGY
Methods and systems for performing spectroscopic ellipsometry measurements of semiconductor structures with a collection NA resolved at the detector are presented herein. The collection NA defines a small measurement box size. Resolving the collection NA at the detector dramatically increases measurement sensitivity. In some examples, the collection NA is subdivided into 50-100 subranges at the detector. In some embodiments, a spectroscopic ellipsometer employing angle-resolved detection of the collection NA includes a coherent illumination source with high spectral intensity across a range of wavelengths from 400 nanometers to 2,500 nanometers. In some embodiments, the illumination beam is scanned over the surface of the specimen under measurement at high frequency during measurement. Spectroscopic ellipsometry measurements with detector resolved collection NA enable critical dimension, shape and profile measurements, and film measurements of deep structures fabricated in accordance with current semiconductor fabrication nodes and those contemplated for fabrication at future semiconductor fabrication nodes.
A scanning acoustic microscope system may include one or more measurement assemblies, wherein a respective one of the measurement assemblies comprises a transducer and a receiver, wherein the receiver of at least one of the one or more measurement assemblies comprises a multipixel sensor to simultaneously generate sensor data for multiple locations associated with a sample. The tool may include a stage configured to scan the sample for measurement by the one or more measurement assemblies. The tool may include a controller communicatively coupled to the one or more measurement assemblies, wherein the controller includes one or more processors configured to execute program instructions causing the processors to implement a metrology recipe by: receiving the sensor data from the one or more measurement assemblies while the sample is scanned by the stage; and generating one or more measurements for the sample based on the sensor data.
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
G01N 23/04 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en transmettant la radiation à travers le matériau et formant des images des matériaux
G01N 23/18 - Recherche de la présence de défauts ou de matériaux étrangers
59.
PICK AND PLACE HEAD WITH AUTOMATIC PITCH ADJUSTMENT
A transfer head may include a plurality of brackets and a plurality of front pickup shafts and rear pickup shafts slidably coupled to the plurality of brackets along a first axis, wherein at least one of the plurality of front pickup shafts and the rear pickup shafts are couplable to a pick-up gear. The transfer head may include a first axis pitch-change sub-system configured to slide the plurality of front pickup shafts relative to the plurality of rear pickup shafts. The transfer head may include a second axis pitch-change sub-system comprising: a cam comprising a plurality of cam slots configured to engage the plurality of brackets, wherein a movement of the cam causes a change in pitch between the plurality of brackets and a corresponding change in pitch between the plurality of the front pickup shafts and the rear pickup shafts along the second axis.
B65G 49/06 - Systèmes transporteurs caractérisés par leur utilisation à des fins particulières, non prévus ailleurs pour des matériaux ou objets fragiles ou dommageables pour des feuilles fragiles, p. ex. en verre
B65G 47/91 - Dispositifs pour saisir et déposer les articles ou les matériaux comportant des pinces pneumatiques, p. ex. aspirantes
B25J 15/06 - Têtes de préhension avec moyens de retenue magnétiques ou fonctionnant par succion
60.
IMAGING THOUSANDS OF ELECTRON BEAMS DURING WORKPIECE INSPECTION
Beamlets are generated from the electron beam using an aperture array downstream of the single global collimated lens. The beamlets are directed through an image lens array in a path of the beamlets downstream of the aperture array that individually focuses the beamlets onto the intermediate image plane with the image lens array. The beamlets are then directed at a workpiece on a stage using a transfer lens array downstream of the image lens array. A path of the beamlets does not include a crossover.
Beamlets are generated from the electron beam using an aperture array downstream of the single global collimated lens. The beamlets are directed through an image lens array in a path of the beamlets downstream of the aperture array that individually focuses the beamlets onto the intermediate image plane with the image lens array. The beamlets are then directed at a workpiece on a stage using a transfer lens array downstream of the image lens array. A path of the beamlets does not include a crossover.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
H01J 37/06 - Sources d'électronsCanons à électrons
An initial probability of occurrence of a stochastic defect over an inspection area of a workpiece is received. All locations of the stochastic defects are sorted by the initial probability of occurrence. A cumulative expected detect count is determined and the cumulative expected defect count is normalized to be a fraction of a total expected defect count. A number of defect locations is determined to capture potential stochastic defects above a threshold of total stochastic defects.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06N 7/01 - Modèles graphiques probabilistes, p. ex. réseaux probabilistes
63.
METHOD TO CALIBRATE, PREDICT, AND CONTROL STOCHASTIC DEFECTS IN EUV LITHOGRAPHY
Based on an initial probability of occurrence of a stochastic defect over a layout of a workpiece, a subset of locations on the workpiece are selected where the initial probability is above a threshold. The subset of locations are grouped by pattern shapes. An expected defect count is determined for each of the pattern shapes. A subset of the pattern shapes is then selected for repair.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06N 7/01 - Modèles graphiques probabilistes, p. ex. réseaux probabilistes
64.
SMALL IN-DIE TARGET DESIGN FOR OVERLAY MEASUREMENT
An overlay metrology system may generate overlay measurements based on isolated images of features on different layers of an overlay target. For example, a target may include a first-layer structure including periodic features with a fine pitch selected to be unresolved by the overlay metrology system, where the gratings structures are oriented to rotate a polarization of rotated diffraction orders relative to a polarization of incident illumination, where the rotated diffraction orders include at least first-order diffraction. In this way, first images generated with a collection polarizer oriented to capture the rotated diffraction orders may include only the first-layer structure, whereas second images generated with a collection polarizer oriented to be aligned with a polarization of incident illumination may include only the second-layer features.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
65.
Spectroscopic Ellipsometry With Detector Resolved Numerical Aperture For Deep Structure Metrology
Methods and systems for performing spectroscopic ellipsometry measurements of semiconductor structures with a collection NA resolved at the detector are presented herein. The collection NA defines a small measurement box size. Resolving the collection NA at the detector dramatically increases measurement sensitivity. In some examples, the collection NA is subdivided into 50-100 subranges at the detector. In some embodiments, a spectroscopic ellipsometer employing angle-resolved detection of the collection NA includes a coherent illumination source with high spectral intensity across a range of wavelengths from 400 nanometers to 2,500 nanometers. In some embodiments, the illumination beam is scanned over the surface of the specimen under measurement at high frequency during measurement. Spectroscopic ellipsometry measurements with detector resolved collection NA enable critical dimension, shape and profile measurements, and film measurements of deep structures fabricated in accordance with current semiconductor fabrication nodes and those contemplated for fabrication at future semiconductor fabrication nodes.
G01N 21/31 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique
66.
SMALL IN-DIE TARGET DESIGN FOR OVERLAY MEASUREMENT
An overlay metrology system may generate overlay measurements based on isolated images of features on different layers of an overlay target. For example, a target may include a first-layer structure including periodic features with a fine pitch selected to be unresolved by the overlay metrology system, where the gratings structures are oriented to rotate a polarization of rotated diffraction orders relative to a polarization of incident illumination, where the rotated diffraction orders include at least first-order diffraction. In this way, first images generated with a collection polarizer oriented to capture the rotated diffraction orders may include only the first-layer structure, whereas second images generated with a collection polarizer oriented to be aligned with a polarization of incident illumination may include only the second-layer features.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
67.
ELECTRICAL PERFORMANCE PREDICTION BASED ON STRUCTURAL MEASUREMENTS OF PARTIALLY FABRICATED SEMICONDUCTOR DEVICES
Methods and systems for measurement of an expected electrical performance of a semiconductor device after device formation is complete based on structural measurements of the device in a partially fabricated state are described herein. In a further aspect, process parameters associated with a process step are adjusted based on the predicted electrical performance to improve process yield. In this manner, process parameters are tuned without having to wait several weeks for electrical performance test measurements to occur at the end of a process flow. In preferred embodiments, a Multiple Reflection Spectroscopic Ellipsometry (MRSE) system is employed to perform structural measurements of a semiconductor device in a partially fabricated state to predict electrical performance of the device at the end of the device fabrication process flow. MRSE based measurements are performed at one or more critical process steps where the structural measurements correlate strongly with final electrical performance.
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01R 31/26 - Test de dispositifs individuels à semi-conducteurs
G01B 11/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
68.
METHOD TO CALIBRATE, PREDICT, AND CONTROL STOCHASTIC DEFECTS IN EUV LITHOGRAPHY
Using an initial probability of occurrence of a stochastic defect over an inspection area of a workpiece, one or more defects within the inspection area are imaged using an optical tool or an electron beam tool. A probability of occurrence of a stochastic defect at each of the defect locations is generated using the model. The defect locations are grouped into probability bins. A consistency between the initial probability and observed results is determined and the model can be tuned based on the consistency.
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 23/2251 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux en utilisant des microsondes électroniques ou ioniques en utilisant des faisceaux d’électrons incidents, p. ex. la microscopie électronique à balayage [SEM]
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
A laser-sustained broadband light source is disclosed. The light source may include a gas containment structure for plasma generation. The gas containment structure may include a first portion formed from a first grade of sapphire and a second portion formed from a second grade of sapphire. The first portion is coupled to one or more sections of the second portion of second grade sapphire. The light source may include sapphire-to-sapphire bonding between the first-grade sapphire of the first portion and the second-grade sapphire of the second portion, thereby eliminating metal-to-sapphire brazing and avoiding exposure of metal components to destructive UV and/or VUV light. The light source may include a primary laser pump source configured to direct a primary pump beam into the gas containment structure to sustain a plasma and a light collector element configured to collect broadband light emitted from the plasma.
A laser-sustained broadband light source is disclosed. The light source may include a gas containment structure for plasma generation. The gas containment structure may include a first portion formed from a first grade of sapphire and a second portion formed from a second grade of sapphire. The first portion is coupled to one or more sections of the second portion of second grade sapphire. The light source may include sapphire-to-sapphire bonding between the first-grade sapphire of the first portion and the second-grade sapphire of the second portion, thereby eliminating metal-to-sapphire brazing and avoiding exposure of metal components to destructive UV and/or VUV light. The light source may include a primary laser pump source configured to direct a primary pump beam into the gas containment structure to sustain a plasma and a light collector element configured to collect broadband light emitted from the plasma.
H05G 2/00 - Appareils ou procédés spécialement adaptés à la production de rayons X, n'utilisant pas de tubes à rayons X, p. ex. utilisant la génération d'un plasma
71.
Electrical Performance Prediction Based On Structural Measurements Of Partially Fabricated Semiconductor Devices
Methods and systems for measurement of an expected electrical performance of a semiconductor device after device formation is complete based on structural measurements of the device in a partially fabricated state are described herein. In a further aspect, process parameters associated with a process step are adjusted based on the predicted electrical performance to improve process yield. In this manner, process parameters are tuned without having to wait several weeks for electrical performance test measurements to occur at the end of a process flow. In preferred embodiments, a Multiple Reflection Spectroscopic Ellipsometry (MRSE) system is employed to perform structural measurements of a semiconductor device in a partially fabricated state to predict electrical performance of the device at the end of the device fabrication process flow. MRSE based measurements are performed at one or more critical process steps where the structural measurements correlate strongly with final electrical performance.
Using an initial probability of occurrence of a stochastic defect over an inspection area of a workpiece, one or more defects within the inspection area are imaged using an optical tool or an electron beam tool. A probability of occurrence of a stochastic defect at each of the defect locations is generated using the model. The defect locations are grouped into probability bins. A consistency between the initial probability and observed results is determined and the model can be tuned based on the consistency.
An initial probability of occurrence of a stochastic defect over an inspection area of a workpiece is received. All locations of the stochastic defects are sorted by the initial probability of occurrence. A cumulative expected defect count is determined and the cumulative expected defect count is normalized to be a fraction of a total expected defect count. A number of defect locations is determined to capture potential stochastic defects above a threshold of total stochastic defects.
Based on an initial probability of occurrence of a stochastic defect over a layout of a workpiece, a subset of locations on the workpiece are selected where the initial probability is above a threshold. The subset of locations are grouped by pattern shapes. An expected defect count is determined for each of the pattern shapes. A subset of the pattern shapes is then selected for repair.
A system includes a wafer shape metrology sub-system configured to perform one or more shape measurements on post-bonding pairs of wafers. The system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller receives a set of measured distortion patterns. The controller applies a bonder control model to the measured distortion patterns to determine a set of overlay distortion signatures. The bonder control model is made up of a set of orthogonal wafer signatures that represent the achievable adjustments. The controller determines whether the set of overlay distortion signatures associated with the measured distortion patterns are outside tolerance limits provides one or more feedback adjustments to the bonder tool.
G05B 19/18 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
76.
AUTOMATIC METHOD TO FIND EXTENT OF REPEATING GEOMETRY IN AN INTEGRATED CIRCUIT LAYOUT
Methods and systems for determining information for an area having unknown patterns and unknown pattern repeatability are provided. One or more computer systems of the system are configured for detecting first and second polygons in first and second rows, respectively, in a design for a specimen. The first and second rows have first dimensions perpendicular to an edge of a known area in the design from inner boundaries of the rows to outer boundaries of the rows. The computer system(s) are also configured for determining first and second repeating pitches of the first and second polygons, respectively. When the first and second repeating pitches are different from each other, the computer system(s) are configured for determining an outer boundary of the area having the unknown patterns and the unknown pattern repeatability as the outer boundary of the first row.
477) crystal is provided. The method includes lowering a seed crystal into a melt having a mixture comprising a source of Sr, B, O, and Cl. The method also includes heating and melting the mixture to a temperature sufficient to form a strontium tetraborate crystal.
A measurement system may include an illumination source configured to generate one or more illumination beams and one or more objective lenses. One or more of the objective lenses may be configured as illumination objective lenses to direct illumination from the illumination source to one or more targets on a sample. One or more of the objective lenses may be configured as collection objective lenses, where each of the collection objective lenses is configured to collect a selected diffraction order of the illumination from the sample. The system may further include one or more detectors, each configured to image the sample based on at least one of the selected diffraction orders from at least one of the collection objective lenses and a controller to generate measurements of the one or more targets on the sample based on one or more images from the detectors.
A metrology system is used to measure a bonded wafer with a top wafer disposed on a carrier wafer. An imaging system generates wafer edge profile images of a circumferential edge of the bonded wafer. The wafer edge profile images can be converted to greyscale. An edge of the bonded wafer can be determined in each of the wafer edge profile images. The pixels in the wafer edge profile images can be converted to a grid and an offset can be determined between the top wafer and carrier wafer.
G01B 11/27 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour tester l'alignement des axes pour tester l'alignement des axes
G01B 11/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur
A measurement system may include an illumination source configured to generate one or more illumination beams and one or more objective lenses. One or more of the objective lenses may be configured as illumination objective lenses to direct illumination from the illumination source to one or more targets on a sample. One or more of the objective lenses may be configured as collection objective lenses, where each of the collection objective lenses is configured to collect a selected diffraction order of the illumination from the sample. The system may further include one or more detectors, each configured to image the sample based on at least one of the selected diffraction orders from at least one of the collection objective lenses and a controller to generate measurements of the one or more targets on the sample based on one or more images from the detectors.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
81.
AUTOMATIC METHOD TO FIND EXTENT OF REPEATING GEOMETRY IN AN INTEGRATED CIRCUIT LAYOUT
Methods and systems for determining information for an area having unknown patterns and unknown pattern repeatability are provided. One or more computer systems of the system are configured for detecting first and second polygons in first and second rows, respectively, in a design for a specimen. The first and second rows have first dimensions perpendicular to an edge of a known area in the design from inner boundaries of the rows to outer boundaries of the rows. The computer system(s) are also configured for determining first and second repeating pitches of the first and second polygons, respectively. When the first and second repeating pitches are different from each other, the computer system(s) are configured for determining an outer boundary of the area having the unknown patterns and the unknown pattern repeatability as the outer boundary of the first row.
G06V 10/22 - Prétraitement de l’image par la sélection d’une région spécifique contenant ou référençant une formeLocalisation ou traitement de régions spécifiques visant à guider la détection ou la reconnaissance
The system includes a primary vacuum chamber and a secondary vacuum chamber connected to the primary vacuum chamber via a gate valve. The gate valve operates between an open position in which the secondary vacuum chamber is in fluid communication with the primary vacuum chamber and a closed position in which the secondary vacuum chamber is sealed from the primary vacuum chamber. A heat exchanger cools the secondary vacuum chamber to adsorb contaminants from the primary vacuum chamber into the secondary vacuum chamber when the gate valve is in the open position. A gas source injects a carrier gas into the secondary vacuum chamber when the gate valve is in the closed position. The heat exchanger also heats the carrier gas in the secondary vacuum chamber to desorb the contaminants into a gas sample with the carrier gas. A sample container collects the gas sample from the secondary vacuum chamber.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
83.
OPTICS FOR IN-SITU SCANNING ELECTRON MICROSCOPE REPAIR
An apparatus is loaded into a scanning electron microscope (SEM) through a load lock of the SEM and onto a stage of the SEM. The apparatus includes a substrate and also includes optics, mechanically coupled to the substrate, to direct light upward away from the substrate. With the apparatus on the stage of the SEM, the optics are used to direct the light upward through an aperture of the SEM onto an electron detector in the SEM.
H01J 37/04 - Dispositions des électrodes et organes associés en vue de produire ou de commander la décharge, p. ex. dispositif électronoptique, dispositif ionoptique
Methods and systems for performing X-ray model based scatterometry measurements of semiconductor structures with reduced computational effort are described herein. More specifically, measured detector image data is transformed to diffraction order efficiency data. The measured diffraction order efficiency data is compared with a parameter-efficiency library including simulated diffraction order efficiency data and associated sets of specimen parameter values. One or more sets of specimen parameter values are selected as seed values for regression on the measured detector image data based on the fit between the measured and simulated diffraction order efficiency data. The seed values are provided as initial values of one or more parameters of interest for the first iteration of the regression. The seed values enable the image based regression to converge to the global minimum with a dramatically reduced number of iterations. Thus, accurate X-ray scatterometry measurements of complex semiconductor structures are realized with less computational effort.
G01N 23/20 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffraction de la radiation par les matériaux, p. ex. pour rechercher la structure cristallineRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la diffusion de la radiation par les matériaux, p. ex. pour rechercher les matériaux non cristallinsRecherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en utilisant la réflexion de la radiation par les matériaux
H01L 21/66 - Test ou mesure durant la fabrication ou le traitement
85.
METHOD TO PERFORM IN-SITU VACUUM CONTAMINATION MEASUREMENT AND IDENTIFICATION IN ARBITRARILY LARGE CHAMBERS
The system includes a primary vacuum chamber and a secondary vacuum chamber connected to the primary vacuum chamber via a gate valve. The gate valve operates between an open position in which the secondary vacuum chamber is in fluid communication with the primary vacuum chamber and a closed position in which the secondary vacuum chamber is sealed from the primary vacuum chamber. A heat exchanger cools the secondary vacuum chamber to adsorb contaminants from the primary vacuum chamber into the secondary vacuum chamber when the gate valve is in the open position. A gas source injects a carrier gas into the secondary vacuum chamber when the gate valve is in the closed position. The heat exchanger also heats the carrier gas in the secondary vacuum chamber to desorb the contaminants into a gas sample with the carrier gas. A sample container collects the gas sample from the secondary vacuum chamber.
G01N 1/22 - Dispositifs pour prélever des échantillons à l'état gazeux
G01N 1/28 - Préparation d'échantillons pour l'analyse
G01N 17/00 - Recherche de la résistance des matériaux aux intempéries, à la corrosion ou à la lumière
G01N 19/08 - Détection de la présence de criques ou d'irrégularités
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
86.
Forward Library Based Seeding For Efficient X-Ray Scatterometry Measurements
Methods and systems for performing X-ray model based scatterometry measurements of semiconductor structures with reduced computational effort are described herein. More specifically, measured detector image data is transformed to diffraction order efficiency data. The measured diffraction order efficiency data is compared with a parameter-efficiency library including simulated diffraction order efficiency data and associated sets of specimen parameter values. One or more sets of specimen parameter values are selected as seed values for regression on the measured detector image data based on the fit between the measured and simulated diffraction order efficiency data. The seed values are provided as initial values of one or more parameters of interest for the first iteration of the regression. The seed values enable the image based regression to converge to the global minimum with a dramatically reduced number of iterations. Thus, accurate X-ray scatterometry measurements of complex semiconductor structures are realized with less computational effort.
G01N 23/207 - Diffractométrie, p. ex. en utilisant une sonde en position centrale et un ou plusieurs détecteurs déplaçables en positions circonférentielles
87.
CONCENTRICITY OFFSET MEASUREMENT FOR HYBRID BONDING
A metrology system is used to measure a bonded wafer with a top wafer disposed on a carrier wafer. An imaging system generates wafer edge profile images of a circumferential edge of the bonded wafer. The wafer edge profile images can be converted to greyscale. An edge of the bonded wafer can be determined in each of the wafer edge profile images. The pixels in the wafer edge profile images can be converted to a grid and an offset can be determined between the top wafer and carrier wafer.
A metrology system may include a dual frequency comb source providing a first comb beam with a first repetition rate and a second comb beam with a second repetition rate, a beamsplitter to generate one or more dual frequency comb illumination beams from the first comb beam and the second comb beam, and a beam combiner to form a dual frequency comb illumination beam from the first comb beam and the second comb beam. The system may further include an illumination sub-system to illuminate a sample with the dual frequency comb illumination beam through an objective lens, a collection sub-system to collect sample light from the sample with the objective lens, and a detector to capture a radio-frequency signal based on the sample light. The system may further extract spectral measurement data associated with the sample from the radio-frequency signal and generate metrology measurements based on the spectral measurement data.
G01B 11/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
An apparatus is loaded into a scanning electron microscope (SEM) through a load lock of the SEM and onto a stage of the SEM. The apparatus includes a substrate and also includes optics, mechanically coupled to the substrate, to direct light upward away from the substrate. With the apparatus on the stage of the SEM, the optics are used to direct the light upward through an aperture of the SEM onto an electron detector in the SEM.
A method for growing a strontium tetraborate (SrB4O7) crystal is provided. The method includes lowering a seed crystal into a melt having a mixture comprising a source of Sr, B, O, and Cl. The method also includes heating and melting the mixture to a temperature sufficient to form a strontium tetraborate crystal.
Methods and systems for performing spectroscopic ellipsometry (SE) measurements of semiconductor structures based on data sets resolved in wavelength, azimuth angle, and angle of incidence are presented herein. In some embodiments, machine learning based measurement models are trained to infer estimated values of one or more parameters of interest characterizing a structure under measurement based on SE measurement data resolved in wavelength, azimuth angle, and angle of incidence. In some other embodiments, regression is performed on a physics based measurement model to estimate values of one or more parameters of interest characterizing a structure under measurement. A dispersive element in the collection beam path disperses collected light across the active surface of a detector to resolve collected light according to wavelength and one angular dimension. Furthermore, multiple images are collected by the detector to resolve collected light across the other angular dimension.
A metrology system may include a dual frequency comb source providing a first comb beam with a first repetition rate and a second comb beam with a second repetition rate, a beamsplitter to generate one or more dual frequency comb illumination beams from the first comb beam and the second comb beam, and a beam combiner to form a dual frequency comb illumination beam from the first comb beam and the second comb beam. The system may further include an illumination sub-system to illuminate a sample with the dual frequency comb illumination beam through an objective lens, a collection sub-system to collect sample light from the sample with the objective lens, and a detector to capture a radio-frequency signal based on the sample light. The system may further extract spectral measurement data associated with the sample from the radio-frequency signal and generate metrology measurements based on the spectral measurement data.
Methods and systems for alignment for semiconductor applications are provided. One method includes determining different align-to-design offsets for multiple instances of an alignment target formed on a specimen by separately aligning images of the multiple instances of the alignment target generated by an imaging subsystem to a rendered image for the alignment target with different alignment methods, respectively. The method also includes identifying the multiple instances having a difference between the different align-to-design offsets below a predetermined threshold. In addition, the method includes determining a runtime align-to-design offset for the alignment target from the different align-to-design offsets determined for only the identified multiple instances. That runtime align-to-design offset can then be used in a process performed on the specimen with an imaging subsystem.
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
94.
ANGLE OF INCIDENCE AND AZIMUTH ANGLE RESOLVED SPECTROSCOPIC ELLIPSOMETRY FOR SEMICONDUCTOR METROLOGY
Methods and systems for performing spectroscopic ellipsometry (SE) measurements of semiconductor structures based on data sets resolved in wavelength, azimuth angle, and angle of incidence are presented herein. In some embodiments, machine learning based measurement models are trained to infer estimated values of one or more parameters of interest characterizing a structure under measurement based on SE measurement data resolved in wavelength, azimuth angle, and angle of incidence. In some other embodiments, regression is performed on a physics based measurement model to estimate values of one or more parameters of interest characterizing a structure under measurement. A dispersive element in the collection beam path disperses collected light across the active surface of a detector to resolve collected light according to wavelength and one angular dimension. Furthermore, multiple images are collected by the detector to resolve collected light across the other angular dimension.
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
Methods and systems for selecting modes for a mode selection process are provided. One system includes a computer subsystem configured for determining information for a specimen and at least one value of a characteristic of the information from images generated for the specimen with an initial subset of different modes of an imaging subsystem. The computer subsystem is also configured for predicting probabilities that better values of the characteristic are determined from the images generated with the different modes other than the initial subset based on the determined at least one value of the characteristic and a relationship between the different modes and associated values of the characteristic of the information. In addition, the computer subsystem is configured for selecting an additional subset of the different modes for which the generating and determining steps are performed next by the imaging and computer subsystems, respectively, based on the predicted probabilities.
Photon or electron detectors may include polycrystalline silicon resistive gates with voltage gradients applied to reduce lag and improve operating speeds. The polycrystalline silicon resistive gates may be doped polycrystalline silicon which is heavily doped with donor atoms or acceptor atoms and ion-implanted with an electrically inactive species. The electrically inactive species may be implanted in a pattern to form multiple ion-implanted regions with different resistivities. The ion-implanted regions are formed in select patterns to control the resistivity of the polycrystalline silicon resistive gates and to modify the lateral electric field across the differentially-biased polycrystalline silicon resistive gate. The X-ray detectors may also include a circuit element with a current-mode differential connection to improve clock feedthrough and power dissipation characteristics.
Methods and systems for alignment for semiconductor applications are provided. One method includes determining different align-to-design offsets for multiple instances of an alignment target formed on a specimen by separately aligning images of the multiple instances of the alignment target generated by an imaging subsystem to a rendered image for the alignment target with different alignment methods, respectively. The method also includes identifying the multiple instances having a difference between the different align-to-design offsets below a predetermined threshold. In addition, the method includes determining a runtime align-to-design offset for the alignment target from the different align-to-design offsets determined for only the identified multiple instances. That runtime align-to-design offset can then be used in a process performed on the specimen with an imaging subsystem.
G06V 10/24 - Alignement, centrage, détection de l’orientation ou correction de l’image
G06F 9/455 - ÉmulationInterprétationSimulation de logiciel, p. ex. virtualisation ou émulation des moteurs d’exécution d’applications ou de systèmes d’exploitation
G06V 10/762 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant le regroupement, p. ex. de visages similaires sur les réseaux sociaux
98.
QUANTITATIVE LINEAR INDEPENDENT VECTOR BASED METHOD (QLIVBM) FOR IMAGE ALIGNMENT
Methods and systems for image alignment are provided. One method includes separately aligning candidate alignment target images in images generated for a specimen to corresponding setup images for setup alignment targets selected to have mutually linearly independent vectors between locations of the setup alignment targets and a reference location. The method also includes, for any of the candidate images successfully aligned to its corresponding setup image, separately determining coordinates of the reference location from coordinates of the aligned candidate images and their corresponding mutually linearly independent vectors. In addition, the method includes determining final coordinates of the reference location in the images generated for the specimen from the separately determined coordinates of the reference location.
G06T 7/33 - Détermination des paramètres de transformation pour l'alignement des images, c.-à-d. recalage des images utilisant des procédés basés sur les caractéristiques
A method for dynamic aberration correction includes generating a primary electron beam with an electron beam source. The method includes directing the primary electron beams to a sample with an electron-optical column and deflecting the primary electron beam to an objective lens of the electron-optical column using a first Wien filter to correct for coma blur in the primary electron beam. The method includes generating off-axis chromatic aberration in the primary electron beam using the objective lens. The method includes adjusting one of a strength or orientation of the Wien filter to correct the off-axis chromatic aberration in the primary electron beam generated by the objective lens. The method includes detecting one or more secondary electrons emanating from the sample.
Methods and systems for selecting modes for a mode selection process are provided. One system includes a computer subsystem configured for determining information for a specimen and at least one value of a characteristic of the information from images generated for the specimen with an initial subset of different modes of an imaging subsystem. The computer subsystem is also configured for predicting probabilities that better values of the characteristic are determined from the images generated with the different modes other than the initial subset based on the determined at least one value of the characteristic and a relationship between the different modes and associated values of the characteristic of the information. In addition, the computer subsystem is configured for selecting an additional subset of the different modes for which the generating and determining steps are performed next by the imaging and computer subsystems, respectively, based on the predicted probabilities.
