Abstract

A method for removing contaminants from a graphene product uses an accelerated neutral atom beam to remove product contaminants without disruption of the product's crystalline lattice and morphology to enable usage in high purity devices/systems such as exemplified in semi-conductor and like high purity needs applications.

IPC Classes  ?

• C01B 32/196 - Purification

Abstract

Orthopedic implants are treated by Neutral Beam irradiation to achieve on at least one or more portions of the implant surface energies matching surface energies of lubricious proteins of the implant usage environment. The irradiation reduces rubbing of the implant and debris shedding from the implant in a mammalian joint region.

IPC Classes  ?

• A61F 2/30 - Joints
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation

Abstract

A method for removing amorphous regions from a surface of a crystal substrate uses an accelerated neutral beam including reactive gas species for removing or reactively modifying material surfaces without sputtering. Accelerated neutral atom beam enabled surface reactions remove surface contaminants from substrate surfaces to create an interface region with exposed crystal lattice in preparation for next phase processing.

IPC Classes  ?

• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• C03C 15/02 - Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

Surfaces of a surgical implant material are modified with an accelerated neutral atom beam, surface properties of the modified material are characterized, and a reduction of wide range of bacteria colonization on such surfaces is achieved without using antibiotics.

IPC Classes  ?

• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• C03C 15/02 - Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A device such as a medical device and a method for making same provides a device surfaces modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets or to match surface energy of the device to that of a protein with the property of inhibition of bacterial colonization that can coat the all or part of the device surface to effect such inhibition.

IPC Classes  ?

• G03F 1/80 - Etching
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/311 - Etching the insulating layers
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• G03F 1/82 - Auxiliary processes, e.g. cleaning

Abstract

A method for removing amorphous regions from a surface of a crystal substrate uses an accelerated neutral beam including reactive gas species for removing or reactively modifying material surfaces without sputtering. Accelerated neutral atom beam enabled surface reactions remove surface contaminants from substrate surfaces to create an interface region with exposed crystal lattice in preparation for next phase processing.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• C03C 15/02 - Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/3065 - Plasma etchingReactive-ion etching
• H01L 21/3105 - After-treatment
• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks

Abstract

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

IPC Classes  ?

• G03F 1/80 - Etching
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/311 - Etching the insulating layers
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• G03F 1/82 - Auxiliary processes, e.g. cleaning
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces

Abstract

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target.

IPC Classes  ?

• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• G03F 1/82 - Auxiliary processes, e.g. cleaning
• G03F 1/86 - Inspecting by charged particle beam [CPB]

Abstract

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target.

IPC Classes  ?

• H01L 21/263 - Bombardment with wave or particle radiation with high-energy radiation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching

Abstract

A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/311 - Etching the insulating layers
• H01L 21/321 - After-treatment
• C03C 23/00 - Other surface treatment of glass not in the form of fibres or filaments
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

IPC Classes  ?

• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• C23C 14/58 - After-treatment
• H01J 37/32 - Gas-filled discharge tubes
• G02B 1/12 - Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
• G02B 1/02 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of crystals, e.g. rock-salt, semiconductors
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/311 - Etching the insulating layers
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• G03F 1/80 - Etching
• G03F 1/82 - Auxiliary processes, e.g. cleaning
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces

Abstract

A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

IPC Classes  ?

• G03F 1/80 - Etching
• H01L 21/311 - Etching the insulating layers
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• G03F 1/82 - Auxiliary processes, e.g. cleaning
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01L 21/321 - After-treatment
• H01J 37/31 - Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces

Abstract

A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• G03F 1/80 - Etching
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01L 21/311 - Etching the insulating layers
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• G03F 1/82 - Auxiliary processes, e.g. cleaning
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/32 - Gas-filled discharge tubes
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces

Abstract

A method for shallow etching a substrate surface forms a shallow modified substrate layer overlying unmodified substrate using an accelerated neutral beam and etches the modified layer, stopping at the unmodified substrate beneath, producing controlled shallow etched substrate surfaces.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• C03C 15/02 - Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/3065 - Plasma etchingReactive-ion etching
• H01L 21/3105 - After-treatment
• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks

Abstract

A device such as a medical device and a method for making same provides a surface modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H05H 5/04 - Direct voltage acceleratorsAccelerators using single pulses energised by electrostatic generators, e.g. by van de Graaff generator

Abstract

A method of modifying the surface of a medical device to release a drug in a controlled way by providing a barrier layer on the surface of one or more drug coatings. The barrier layer consists of modified drug material converted to a barrier layer by irradiation by an accelerated neutral beam derived from an accelerated gas cluster ion beam. Also medical devices formed thereby.

IPC Classes  ?

• A61L 31/16 - Biologically active materials, e.g. therapeutic substances
• B05D 1/02 - Processes for applying liquids or other fluent materials performed by spraying
• B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation

Abstract

A method for treating a substrate surface uses Neutral Beam irradiation derived from a gas-cluster ion-beam and articles produced thereby including lithography photomask substrates.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• G03F 1/80 - Etching
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• G03F 1/82 - Auxiliary processes, e.g. cleaning
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/311 - Etching the insulating layers
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities

Abstract

A method for shallow etching a substrate surface forms a shallow modified substrate layer overlying unmodified substrate using an accelerated neutral beam and etches the modified layer, stopping at the unmodified substrate beneath, producing controlled shallow etched substrate surfaces.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A method of forming a patterned hard mask on a surface of a substrate uses an accelerated neutral beam with carbon atoms. The objects set forth above as well as further and other objects and advantages of the present invention are achieved by the various embodiment's of the invention described herein below.

IPC Classes  ?

• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

X (0.05

IPC Classes  ?

• H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.

IPC Classes  ?

• G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
• B29C 39/20 - Making multilayered or multicoloured articles
• B29C 59/00 - Surface shaping, e.g. embossingApparatus therefor
• B29K 25/00 - Use of polymers of vinyl-aromatic compounds as moulding material
• B29K 83/00 - Use of polymers having silicon, with or without sulfur, nitrogen, oxygen or carbon only, in the main chain, as moulding material
• B29L 7/00 - Flat articles, e.g. films or sheets

Abstract

A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

IPC Classes  ?

• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• G03F 1/80 - Etching
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• G03F 1/82 - Auxiliary processes, e.g. cleaning
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/311 - Etching the insulating layers
• B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
• H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities

Abstract

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

IPC Classes  ?

• C23C 14/58 - After-treatment
• H01J 37/32 - Gas-filled discharge tubes
• G02B 1/12 - Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
• G02B 1/02 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of crystals, e.g. rock-salt, semiconductors
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path

Abstract

A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, and a modified surface layer of thickness T2 which is less than T1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.

IPC Classes  ?

• G03F 1/50 - Mask blanks not covered by groups Preparation thereof

Abstract

A method for treating a substrate surface uses Neutral Beam irradiation derived from a gas-cluster ion-beam and articles produced thereby including lithography photomask substrates. One embodiment provides a method of treating a surface of a substrate that contains one or more embedded particles or contains sub-surface damage, comprising the steps of: providing a reduced pressure chamber; forming a gas-cluster ion-beam comprising gas-cluster ions within the reduced pressure chamber; accelerating the gas-cluster ions to form an accelerated gas-duster ion-beam along a beam path within the reduced pressure chamber; promoting fragmentation and/or dissociation of at least a portion of the accelerated gas-cluster ions along the beam path; removing charged particles from the beam path to form an accelerated neutral beam along the beam path in the reduced pressure chamber; holding the surface in the beam path; and treating at least a portion of the surface of the substrate by irradiation.

IPC Classes  ?

• H01L 21/30 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/46 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements

Abstract

An apparatus and method for producing a deflection of a Neutral Beam derived from a gas-cluster ion-beam deflects the gas-cluster ion-beam prior to dissociation of gas clusters and removal of tons.

IPC Classes  ?

• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• H01J 49/06 - Electron- or ion-optical arrangements

Abstract

A device such as a medical device and a method for making same provides a surface modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets.

IPC Classes  ?

• G21K 5/00 - Irradiation devices

Abstract

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

IPC Classes  ?

• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation

Abstract

A method of preparing a preformed bone shape for implantation provides irradiating at least a portion of a preformed bone shape by a Neutral Beam derived from a GCIB, and the preformed bone shape so irradiated.

IPC Classes  ?

• A61F 13/00 - Bandages or dressingsAbsorbent pads
• A61L 27/54 - Biologically active materials, e.g. therapeutic substances
• A61L 27/36 - Materials for prostheses or for coating prostheses containing ingredients of undetermined constitution or reaction products thereof

Abstract

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

IPC Classes  ?

• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material

Abstract

A method of modifying the surface of a medical device to release a drug in a controlled way by providing a barrier layer on the surface of one or more drug coatings. The barrier layer consists of modified drug material converted to a barrier layer by irradiation by an accelerated neutral beam derived from an accelerated gas cluster ion beam. Also medical devices formed thereby.

IPC Classes  ?

• A61L 31/16 - Biologically active materials, e.g. therapeutic substances
• A61L 27/54 - Biologically active materials, e.g. therapeutic substances
• A61K 31/436 - Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having six-membered rings with one nitrogen as the only ring hetero atom ortho- or peri-condensed with heterocyclic ring systems the heterocyclic ring system containing a six-membered ring having oxygen as a ring hetero atom, e.g. rapamycin

Abstract

Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous techniques. This results in the ability to achieve improved depth profile resolution in measurements by analytical instruments such as SIMS and XPS (or ESCA) analytical instruments.

IPC Classes  ?

• G01N 23/00 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
• G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes

Abstract

A method for improving bioactivity and/or biodegradation time of a collagen surgical implant and collagen surgical implants having such improved properties. A gas-cluster ion-beam (GCIB) is formed in a reduced-pressure chamber, a collagen surgical implant is introduced into the reduced-pressure chamber, and at least a first portion of the surface of said collagen surgical implant is irradiated with a GCIB-derived beam.

IPC Classes  ?

• C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Abstract

A bone implantable medical device made from a biocompatible material, preferably comprising titania or zirconia, has at least a portion of its surface modified to facilitate improved integration with bone. The implantable device may incorporate a surface infused with osteoinductive agent and/or may incorporate holes loaded with a therapeutic agent. The infused surface and/or the holes may be patterned to determine the distribution of and amount of osteoinductive agent and/or therapeutic agent incorporated. The rate of release or elution profile of the therapeutic agent may be controlled. Methods for producing such a bone implantable medical device are also disclosed and employ the use of ion beam irradiation, preferably gas cluster ion beam irradiation for improving bone integration.

IPC Classes  ?

• A61K 6/083 - Compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
• A61F 2/28 - Bones
• B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation

Abstract

An apparatus and method for characterizing a particle beam provides receiving a particle beam in a central region of a reduced pressure enclosure; impacting the received beam against a beam strike that is thermally isolated from the enclosure; measuring a temperature change of the beam strike due to the impacting beam; measuring a pressure change in the enclosure due to receiving the beam; and processing the measured temperature change and the measured pressure change to determine beam characteristics.

IPC Classes  ?

• H01J 37/244 - DetectorsAssociated components or circuits therefor
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

An apparatus and method for characterizing a particle beam provides receiving a particle beam in a central region of a reduced pressure enclosure; impacting the received beam against a beam strike that is thermally isolated from the enclosure; measuring a temperature change of the beam strike due to the impacting beam; measuring a pressure change in the enclosure due to receiving the beam; and processing the measured temperature change and the measured pressure change to determine beam characteristics.

IPC Classes  ?

• H01L 21/44 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups

Abstract

A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.

IPC Classes  ?

• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• H01S 1/00 - Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
• A61F 2/02 - Prostheses implantable into the body

Abstract

A medical device for surgical implantation adapted to serve as a drug delivery system has one or more drug loaded holes with barrier layers to control release or elution of the drug from the holes or to control inward diffusion of fluids into the holes. The barrier layers are non-polymers and are formed from the drug material itself by beam processing. The holes may be in patterns to spatially control drug delivery. Flexible options permit combinations of drugs, variable drug dose per hole, multiple drugs per hole, temporal control of drug release sequence and profile. Methods for forming such a drug delivery system are also disclosed. Gas cluster ion beam and/or accelerated Neutral Beam derived from an accelerated gas cluster ion beam may be employed.

IPC Classes  ?

• A61F 2/06 - Blood vessels

Abstract

A method of modifying the surface of a medical device to release a drug in a controlled way by providing a barrier layer on the surface of one or more drug coatings. The barrier layer consists of modified drug material converted to a barrier layer by irradiation by an accelerated neutral beam derived from an accelerated gas cluster ion beam. Also medical devices formed thereby.

IPC Classes  ?

• A61L 33/00 - Antithrombogenic treatment of surgical articles, e.g. sutures, catheters, prostheses, or of articles for the manipulation or conditioning of bloodMaterials for such treatment
• B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials

Abstract

A method for improving bioactivity of a surface of an implantable object comprising titania, titanium, an alloy of titanium, and/or polytetrafluoroethylene (PTFE) and implantable objects prepared thereby provides forming an accelerated neutral beam derived from an accelerated gas-cluster ion-beam (GCIB) in a reduced-pressure chamber, introducing an implantable object into the reduced-pressure chamber, and irradiating at least a first portion of the surface of said implantable object with a GCIB-derived neutral beam.

IPC Classes  ?

• B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation

Abstract

Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous techniques. This results in the ability to achieve improved depth profile resolution in measurements by analytical instruments such as SIMS and XPS (or ESCA) analytical instruments.

IPC Classes  ?

• H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching

Abstract

An apparatus and method provides a drug layer formed on a surface region of a medical device, the drug layer comprised of a drug deposition and a carbonized or densified layer formed from the drug deposition by irradiation on an outer surface of the drug deposition, wherein the carbonized or densified layer does not penetrate through the drug deposition and is adapted to release drug from the drug deposition at a predetermined rate.

IPC Classes  ?

• A61L 33/00 - Antithrombogenic treatment of surgical articles, e.g. sutures, catheters, prostheses, or of articles for the manipulation or conditioning of bloodMaterials for such treatment
• B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials

Abstract

A bone implantable medical device made from a biocompatible material, preferably comprising titania or zirconia, has at least a portion of its surface modified to facilitate improved integration with bone. The implantable device may incorporate a surface infused with osteoinductive agent and/or may incorporate holes loaded with a therapeutic agent. The infused surface and/or the holes may be patterned to determine the distribution of and amount of osteoinductive agent and/or therapeutic agent incorporated. The rate of release or elution profile of the therapeutic agent may be controlled. Methods for producing such a bone implantable medical device are also disclosed and employ the use of accelerated Neutral Beam irradiation, wherein the Neutral Beam is derived from an accelerated gas cluster ion beam irradiation for improving bone integration.

IPC Classes  ?

• A61F 2/28 - Bones

Abstract

A method for improving bioactivity of a surface of a surgical suture and sutures prepared thereby provides forming a gas-cluster ion-beam (GCIB) in a reduced-pressure chamber, introducing a surgical suture into the reduced-pressure chamber, and irradiating at least a first portion of the surface of said surgical suture with a GCIB derived beam.

IPC Classes  ?

• C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material

Abstract

A method of disinfecting a biological material provides disposing at least a portion of the biological material in the path of the gas cluster ion beam or in the path of the accelerated neutral beam so as to irradiate at least a portion of the biological material to disinfect the irradiated portion.

IPC Classes  ?

• C12N 13/00 - Treatment of microorganisms or enzymes with electrical or wave energy, e.g. magnetism, sonic waves

Abstract

Methods and systems for sterilization of objects by gas-cluster ion-beam (GCIB) irradiation or by accelerated Neutral Beam are disclosed. The sterilization may be in conjunction with other beneficial GCIB surface processing of the objects. The objects may be medical devices or surgically implantable medical prostheses. The accelerated Neutral Beam is derived from an accelerated GCIB.

IPC Classes  ?

• A61L 2/08 - Radiation

Abstract

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

IPC Classes  ?

• B01D 59/00 - Separation of different isotopes of the same chemical element

Abstract

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

IPC Classes  ?

• H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
• H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy

Abstract

The invention provides for a method of improving bioactivity of a surface of an implantable object. The invention also provides for a method of improving bioactivity of a surface of biological laboratory ware. The invention further provides a method of attaching cells to an object. The invention even further provides for a method of preparing an object for medical implantation. The invention also provides for an article with attached cell, and for an article for medical implantation. Improvements result from the application of gas-cluster ion beam technology and from the application of neutral beam technology, wherein neutral beams are derived from accelerated gas-cluster ion beams.

IPC Classes  ?

• H05H 3/00 - Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
• A61F 2/02 - Prostheses implantable into the body
• A61L 27/18 - Macromolecular materials obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
• A61L 27/38 - Animal cells
• H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• A61B 17/00 - Surgical instruments, devices or methods

Abstract

The invention provides for a method of improving bioactivity of a surface of an implantable object. The invention also provides for a method of improving bioactivity of a surface of biological laboratory ware. The invention further provides a method of attaching cells to an object. The invention even further provides for a method of preparing an object for medical implantation. The invention also provides for an article with attached cell, and for an article for medical implantation. Improvements result from the application of gas-cluster ion beam technology and from the application of neutral beam technology, wherein neutral beams are derived from accelerated gas-cluster ion beams.

IPC Classes  ?

• D04H 1/00 - Non-woven fabrics formed wholly or mainly of staple fibres or like relatively short fibres

Abstract

A gas-cluster-jet generator with improved vacuum management techniques and apparatus is disclosed. The gas-cluster-jet generator comprises a substantially conically shaped vacuum chamber for housing the nozzle and jet exit portions of the gas-cluster-jet generator. A skimmer may be located at the narrow end of the conical chamber and a close-coupled vacuum pump is located at the wide end of the conical chamber. Support members for the nozzle are high conductivity “spider” supports that provide support rigidity while minimizing gas flow obstruction for high pumping speed. The conically shaped vacuum chamber redirects un-clustered gas in a direction opposite the direction of the gas-cluster-jet for efficient evacuation of the un-clustered gas. The nozzle and a skimmer may have fixed precision relative alignment, or may optionally have a nozzle aiming adjustment feature for aligning the gas-cluster-jet with the skimmer and downstream beamline components. Also disclosed are various configurations of gas-cluster ion-beam processing tools employing the improved gas-cluster-jet generator.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• G21K 5/10 - Irradiation devices with provision for relative movement of beam source and object to be irradiated

Abstract

A gas-cluster-jet generator with improved vacuum management techniques and apparatus is disclosed The gas-cluster-jet generator comprises a substantially conically shaped vacuum chamber for housing the nozzle and jet exit portions of the gas-cluster-jet generator. A skimmer may be located at the narrow end of the conical chamber and a close coupled vacuum pump is located at the wide end of the conical chamber. Support members for the nozzle are high conductivity "spider" supports that provide support rigidity while minimizing gas flow obstruction for high pumping speed. The conically shaped vacuum chamber redirects un-clustered gas in a direction opposite the direction of the gas-cluster-jet for efficient evacuation of the un-clustered gas. The nozzle and a skimmer may have fixed precision relative alignment, or may optionally have a nozzle aiming adjustment feature for aligning the gas-cluster-jet with the skimmer and downstream beamline components. Also disclosed are gas-cluster ion-beam processing tools.

IPC Classes  ?

• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

Abstract

The invention provides a method for preparing a biological mateπal for implanting The invention also provides a biological material for surgical implantation The invention further provides a biological composition for surgical implantation, wherein the biological composition has been treated with a gas cluster ion beam to modify the surface for enhanced hydrophilicity or wettability.

IPC Classes  ?

• A61K 9/00 - Medicinal preparations characterised by special physical form

Abstract

The invention provides methods for surgical grafting of a tissue. The method comprises the steps of explaining a graft tissue from a donor, irradiating at least a first portion of the graft tissue with an ion beam, and surgically grafting the graft tissue into a recipient wherein the tissue has been irradiated with a gas cluster ion beam.

IPC Classes  ?

• C12N 5/07 - Animal cells or tissues

Abstract

The invention provides for a method of improving bioactivity of a surface of an implantable object. The invention also provides for a method of improving bioactivity of a surface of biological laboratory ware. The invention further provide a method of attaching cells to an object. The invention even further provides for a method of preparing an object for medical implantation. The invention also provides for an article with attached cells, and for an article for medical implantation.

IPC Classes  ?

• A61F 2/02 - Prostheses implantable into the body

Abstract

The invention provides a method for preparing a biological material for implanting. The invention also provides a biological material for surgical implantation. The invention further provides a biological composition for surgical implantation.

IPC Classes  ?

• A61B 17/58 - Surgical instruments or methods for treatment of bones or jointsDevices specially adapted therefor for osteosynthesis, e.g. bone plates, screws or setting implements
• A61K 35/32 - BonesOsteocytesOsteoblastsTendonsTenocytesTeethOdontoblastsCartilageChondrocytesSynovial membrane
• A61K 35/34 - MusclesSmooth muscle cellsHeartCardiac stem cellsMyoblastsMyocytesCardiomyocytes
• A61K 35/12 - Materials from mammalsCompositions comprising non-specified tissues or cellsCompositions comprising non-embryonic stem cellsGenetically modified cells
• C23C 14/46 - Sputtering by ion beam produced by an external ion source

Abstract

The invention provides methods for surgical grafting of a tissue. The method comprises the steps of explanting a graft tissue from a donor, irradiating at least a first portion of the graft tissue with an ion beam, and surgically grafting the graft tissue into a recipient.

IPC Classes  ?

• A61K 25/12 -

Abstract

A bone implantable medical device made from a biocompatible material, preferably comprising titania or zirconia, has at least a portion of its surface modified to facilitate improved integration with bone. The implantable device may incorporate a surface infused with osteoinductive agent and/or may incorporate holes loaded with a therapeutic agent. The infused surface and/or the holes may be patterned to determine the distribution of and amount of osteoinductive agent and/or therapeutic agent incorporated. The rate of release or elution profile of the therapeutic agent may be controlled. Methods for producing such a bone implantable medical device are also disclosed and employ the use of ion beam irradiation, preferably gas cluster ion beam irradiation for improving bone integration.

IPC Classes  ?

• A61L 27/28 - Materials for coating prostheses
• A61L 27/04 - Metals or alloys
• A61L 27/54 - Biologically active materials, e.g. therapeutic substances

Abstract

A medical device for surgical implantation adapted to serve as a drug delivery system has one or more drug loaded holes with barrier layers to control release or elution of the drug from the holes or to control inward diffusion of fluids into the holes. The barrier layers are non-polymers and are formed from the drug material itself by ion beam processing. The holes may be in patterns to spatially control drug delivery. Flexible options permit combinations of drugs, variable drug dose per hole, multiple drugs per hole, temporal control of drug release sequence and profile. Methods for forming such a drug delivery system are also disclosed.

IPC Classes  ?

• A61L 27/54 - Biologically active materials, e.g. therapeutic substances
• A61L 27/50 - Materials characterised by their function or physical properties
• A61F 2/02 - Prostheses implantable into the body
• A61F 2/04 - Hollow or tubular parts of organs, e.g. bladders, tracheae, bronchi or bile ducts
• A61F 2/82 - Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents

Abstract

Methods and systems for sterilization of objects by gas-cluster ion-beam (GCIB) irradiation are disclosed. The sterilization may be in conjunction with other beneficial GCIB surface processing of the objects. The objects may be medical devices or surgically implantable medical prostheses.

IPC Classes  ?

• G21K 5/04 - Irradiation devices with beam-forming means
• A61L 2/00 - Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lensesAccessories therefor

Abstract

Methods and systems for sterilization of objects by gas-cluster ion-beam (GCIB) irradiation are disclosed. The sterilization may be in conjunction with other beneficial GCIB surface processing of the objects. The objects may be medical devices or surgically implantable medical prostheses.

IPC Classes  ?

• A61L 2/14 - Plasma, i.e. ionised gases
• A61L 2/20 - Gaseous substances, e.g. vapours

Abstract

Methods and systems for the improvement of a crystalline and/or poly-crystalline surgical blade include gas cluster ion beam irradiation of the blades in order to smooth; or to sharpen; or to reduce the brittleness and thus reduce susceptibility of the blade to crack, chip, or fracture; or to render the blades hydrophilic. Crystalline or poly-crystalline surgical blade (silicon for example) having a thin film cutting edge with improved properties.

IPC Classes  ?

• C23F 4/00 - Processes for removing metallic material from surfaces, not provided for in group or
• A61B 17/3211 - Surgical scalpels or knivesAccessories therefor

Abstract

A multi-layer drug coated medical device such as for example an expandable vascular drug eluting stent is formed by vacuum pulse spray techniques wherein each layer is irradiated to improve adhesion and/or drug elution properties prior to formation of subsequent layers. Layers may be homogeneous or of diverse drugs. Layers may incorporate a non-polymer elution-retarding material. Layers may alternate with one or more layers of non-polymer elution-retarding materials. Polymer binders and/or matrices are not used in the formation of the coatings, yet the pure drug coatings have good mechanical and elution rate properties. Systems, methods and medical device articles are disclosed.

IPC Classes  ?

• A61L 33/00 - Antithrombogenic treatment of surgical articles, e.g. sutures, catheters, prostheses, or of articles for the manipulation or conditioning of bloodMaterials for such treatment

Abstract

A multi-layer drug coated medical device such as for example an expandable vascular drug eluting stent is formed by vacuum pulse spray techniques wherein each layer is irradiated to improve adhesion and/or drug elution properties prior to formation of subsequent layers. Layers may be homogeneous or of diverse drugs. Layers may incorporate a non-polymer elution-retarding material. Layers may alternate with one or more layers of non-polymer elution-retarding materials. Polymer binders and/or matrices are not used in the formation of the coatings, yet the pure drug coatings have good mechanical and elution rate properties. Systems, methods and medical device articles are disclosed.

IPC Classes  ?

• B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
• B05C 13/02 - Means for manipulating or holding work, e.g. for separate articles for particular articles
• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• A61F 2/82 - Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents

Abstract

Irradiation of a surface of a material with a gas cluster ion beam modifies the wettability of the surface. The wettability may be increased or decreased dependent on the characteristics of the gas cluster ion beam. Improvements in wettability of a surface by the invention exceed those obtained by conventional plasma cleaning or etching. The improvements may be applied to surfaces of medical devices, such as vascular stents for example, and may be used to enable better wetting of medical device surfaces with liquid drugs in preparation for adhesion of the drug to the device surfaces, A mask may be used to limit processing to a portion of the surface. Medical devices formed by using the methods of the invention are disclosed.

IPC Classes  ?

• B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
• A61N 1/18 - Applying electric currents by contact electrodes
• A61B 19/00 - Instruments, implements or accessories for surgery or diagnosis not covered by any of the groups A61B 1/00-A61B 18/00, e.g. for stereotaxis, sterile operation, luxation treatment, wound edge protectors(protective face masks A41D 13/11; surgeons' or patients' gowns or dresses A41D 13/12; devices for carrying-off, for treatment of, or for carrying-over, body liquids A61M 1/00)