Abstract

The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions.

IPC Classes  ?

• C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
• C30B 29/40 - AIIIBV compounds
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B01F 23/10 - Mixing gases with gases
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• B01F 25/00 - Flow mixersMixers for falling materials, e.g. solid particles

Abstract

The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions.

IPC Classes  ?

• C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
• C30B 25/16 - Controlling or regulating
• C30B 25/22 - Sandwich processes
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
• C30B 29/38 - Nitrides
• C30B 29/40 - AIIIBV compounds
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• C23C 16/34 - Nitrides
• B01F 3/02 - Mixing, e.g. dispersing, emulsifying, according to the phases to be mixed gases with gases or vapours
• B01F 5/02 - Jet mixers
• B01F 15/06 - Heating or cooling systems