Abrégé

The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions.

Classes IPC  ?

• C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
• C30B 29/40 - Composés AIII BV
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• B01F 23/10 - Mélange de gaz avec des gaz
• H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
• B01F 25/00 - Mélangeurs à écoulementMélangeurs pour matières tombantes, p. ex. particules solides

Abrégé

The invention relates to methods for the chemical application of coatings by the decay of gaseous compounds, in particular to methods for injecting gases into a reaction chamber. The invention also relates to means for feeding gases into a reaction chamber, said means providing for the regulation of streams of reactive gases, and ensures the possibility of obtaining multi-layer epitaxial structures having set parameters and based on nitrides of group III metals while simultaneously increasing the productivity and cost-effectiveness of the process of the epitaxial growth thereof. Before being fed into a reactor, all of the gas streams are sent to a mixing chamber connected to the reactor, and are then fed into the reactor via a flux former under laminar flow conditions. The mixing chamber and the flux former are equipped with means for maintaining a set temperature. As a result of these solutions, a gaseous mixture with set parameters is fed into the reactor, and the formation of vortices is simultaneously prevented. The maximum allowable volume of the mixing chamber is chosen to take into account the process parameters and the required rarity of heterojunctions.

Classes IPC  ?

• C30B 25/14 - Moyens d'introduction et d'évacuation des gazModification du courant des gaz réactifs
• C30B 25/16 - Commande ou régulation
• C30B 25/22 - Procédés dans lesquels la croissance intervient sur les deux faces
• C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
• C30B 29/38 - Nitrures
• C30B 29/40 - Composés AIII BV
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
• C23C 16/52 - Commande ou régulation du processus de dépôt
• C23C 16/34 - Nitrures
• B01F 3/02 - Mélange, p.ex. dispersion, émulsion, selon les phases à mélanger de gaz avec des gaz ou des vapeurs
• B01F 5/02 - Mélangeurs à jet
• B01F 15/06 - Systèmes de chauffage ou de refroidissement