The present technology generally relates to compositions and methods for polishing surfaces comprising a metal and a dielectric film material. Embodiments include methods for polishing a surface comprising W, TEOS/SiO2 and SiN, comprising applying a polishing slurry comprising an abrasive, a SiN polishing rate enhancer, and an anionic surfactant, and methods of buffering a metal oxide salt in a CMP slurry to obtain an increased robustness against TEOS removal comprising polishing a surface comprising a metal and TEOS by applying a polishing slurry comprising an anionic modified colloidal silica abrasive and an anionic surfactant.
Provided is a polishing composition that allows carbon-added silicon oxide (SiOC) to be polished at a higher polishing speed than the polishing speed of silicon nitride (i.e., the selection ratio of SiOC/silicon nitride is high).
Provided is a polishing composition that allows carbon-added silicon oxide (SiOC) to be polished at a higher polishing speed than the polishing speed of silicon nitride (i.e., the selection ratio of SiOC/silicon nitride is high).
A polishing composition containing spinous silica particles and a dispersing medium, in which the pH is less than 5.
Provided is a polishing composition that can improve the surface quality of a surface to be polished after polishing while achieving an excellent polishing removal rate for an object to be polished. The polishing composition to be provided contains sodium permanganate as an oxidant. The polishing composition contains or does not contain an abrasive A with a Mohs hardness of less than 8 is contained as an abrasive. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
A polishing composition that can achieve an excellent polishing removal rate for an object to be polished is provided. The polishing composition used for polishing the object to be polished is provided. The polishing composition contains water, and sodium permanganate as an oxidant. In some preferred embodiments, the polishing composition further contains a metal salt selected from salts each of which has a cation containing a metal belonging to Groups 3 to 16 in the periodic table, and an anion. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
The present invention provides a means for adjusting the polishing removal rate of a metal material relative to the polishing removal rate of a resin material, while maintaining the polishing removal rates high, in polishing of a polishing object that contains the resin material and the metal material. The present disclosure relates to a polishing composition which is used for polishing of a polishing object that contains a resin material and a metal material, and which contains abrasive grains, a first amine compound that has 0 or one amino group, a second amine compound that has two or more amino groups, and a dispersion medium.
There is provided a sliding apparatus having low frictional resistance with a snow surface or an ice surface and excellent sliding properties. A sliding apparatus for sliding on a sliding object (snow surface or ice surface) has a sliding surface (1) contacting the sliding object. The sliding surface (1) is divided into a plurality of regions (1A, 1B, 1C) different in the surface arithmetic mean roughness Ra, and the plurality of regions (1A, 1B, 1C) is arranged in order along the longitudinal direction. Among the plurality of regions (1A, 1B, 1C), the surface arithmetic mean roughness Ra of a front region (1A) which is a region first contacting the sliding object in sliding is smaller than the surface arithmetic mean roughness Ra of the rear region (1B) positioned rearward in the sliding direction with respect to the front region (1A).
A63C 5/12 - Making thereofSelection of particular materials
B24B 29/02 - Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
7.
POLISHING COMPOSITION, POLISHING COMPOSITION PRODUCTION METHOD, POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD
There are provided a polishing composition capable of increasing the polishing removal rate of silicon nitride, a polishing composition production method, a polishing method, and a semiconductor substrate production method. The polishing composition contains abrasives having a zeta potential of −5 mV or less and a cationic surfactant.
There are provided a polishing composition less likely to leave cloudiness on the surface of an object to be polished even when there is a time interval before wiping-off, a method for producing the same, and a polishing method.
There are provided a polishing composition less likely to leave cloudiness on the surface of an object to be polished even when there is a time interval before wiping-off, a method for producing the same, and a polishing method.
A polishing composition contains abrasives, a hydrophobic dispersion medium, water, and a surfactant. The surfactant contains polyoxyethylene alkyl ether represented by Formula (i) RO—(C2H4O)n—H. In Formula (i), R is a branched-chain alkyl group having a number of carbon atoms of 12 or more and 20 or less, and n represents the average number of added moles of oxyethylene and is 3 or more and 50 or less.
105050 at which the cumulative particle volume from the smallest particle size accounts for 50% of the total particle volume is at most 40 μm. At 1 atm, the difference between the highest value and the lowest value of the boiling points of the plurality of metal oxides is at least 500°C. By using said powder for thermal spraying, the ratio of phase separation can be reduced while denseness is enhanced and surface roughness is reduced in a thermal-sprayed coating.
Provided are a high-performance polishing composition, a method for producing same, and a polishing method. The polishing composition contains abrasive particles, water, and a hydrophobic dispersion medium. In the particle size distribution of the abrasive particles, when the cumulative volume of the abrasive particles from the large particle size side in the cumulative particle size distribution on a volume basis becomes 10%, 50%, and 90%, respectively, are defined as D10, D50, and D90, respectively, the particle size distribution width (D10-D90)/D50 of the abrasive particles is 0.4 to 2.0, and the specific surface area (m2/g) of the abrasive particles is 12 to 20.
5050) of greater than 1.0 µm and a primary particle roundness of at least 0.90. The anti-caking agent is inorganic particles different from the abrasive grains, and the product of the zeta potential of the abrasive grains and the zeta potential of the anti-caking agent is positive.
The present invention provides a method for producing a polishing composition in which it is easy to confirm the degree of dissolution of a chelating agent during the production process. Provided is a method for producing a polishing composition for polishing a surface formed of a silicon material. The method for producing a polishing composition comprises: preparing a basic chelating agent-containing liquid that contains a basic compound, water, and a chelating agent; and mixing the chelating agent-containing liquid and a silica dispersion liquid that contains silica particles and water.
The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing.
The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing.
The present invention is a polishing composition containing abrasive grains and an alkylamine compound having at least one linear or branched alkyl group having 2 or more and 15 or less carbon atoms, in which a pH is less than 7, and a zeta potential of the abrasive grains in the polishing composition is negative.
Provided is a means for allowing residues remaining on the surface of a polished object to be further reduced. Provided is a composition for surface treatment containing components (A) to (C) below and having pH of more than 7.0: the component (A): a piperazine-based compound represented by a formula (a) below and having two or more amino groups having pKa larger than the pH of the composition for surface treatment, the component (B): an anionic polymer, and the component (C): a buffer represented by a formula: A-COO—NH4+ (A is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).
Provided is a means for allowing residues remaining on the surface of a polished object to be further reduced. Provided is a composition for surface treatment containing components (A) to (C) below and having pH of more than 7.0: the component (A): a piperazine-based compound represented by a formula (a) below and having two or more amino groups having pKa larger than the pH of the composition for surface treatment, the component (B): an anionic polymer, and the component (C): a buffer represented by a formula: A-COO—NH4+ (A is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).
The present invention provides a means that is capable of sufficiently removing residues present on the surface of a polished silicon carbide substrate. The present invention pertains to a method for polishing and washing a silicon carbide substrate, the method comprising: a step for supplying a polishing composition to the silicon carbide substrate and polishing the same; and a step for washing the polished silicon carbide substrate using a washing agent. The washing agent contains a chelating agent, a surfactant, and a solvent. The solvent consists only of water.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B23Q 11/00 - Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling workSafety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
B24B 37/00 - Lapping machines or devicesAccessories
C04B 35/505 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds based on yttrium oxide
Provided is a polishing composition with which surface roughness after polishing can be improved. Also provided is a polishing composition used for polishing a surface composed of a silicon material. This polishing composition comprises abrasive grains and a water-soluble polymer, wherein the abrasive grains includes organic particles. In some aspects, the organic particles may be one or more types of particles selected from among an acrylic resin, a styrene resin, a styrene-acrylic resin, a polyamide resin, a polyimide resin, an epoxy resin, a polyester resin, a polyurethane resin, a phenolic resin, a melamine resin, a benzoguanamine resin, a polyethersulfone resin, and a polytetrafluoroethylene resin.
The present invention provides a polishing composition capable of improving polishing removal speed. The polishing composition contains resin particles and an oxidizing agent, the oxidizing agent contains a composite metal oxide, and the concentration of organic particles is at least 0.01 wt%.
The present invention provides a polishing composition with which friction on a polishing target can be reduced while maintaining a satisfactory polishing speed. The polishing composition contains inorganic particles, an oxidizing agent, and resin particles, the oxidizing agent contains a composite metal oxide, and the ratio (Nrp/Nip) of the number (Nip) of inorganic particles and the number (Nrp) of resin particles is 80 or higher.
Provided are a high-performance polishing composition, a method for producing the same, and a polishing method. The polishing composition contains abrasive grains, water, and a hydrophobic dispersion medium. The value of a shape parameter K, obtained by dividing the specific surface area (m2/g) by the square of the particle diameter D50 (μm) of the abrasive grains, is from 0.6 to 60.
Provided is a technology that enhances the uniformity of components in a thermally sprayed film. The thermal spraying powder disclosed herein is thermal spraying powder for forming an electrode of a solid oxide fuel cell or a solid oxide electrolysis cell. This thermal spraying powder has a granule strength of at least 25 MPa.
The present invention provides a technique for improving the uniformity of components in a spray coating. The powder for thermal spraying disclosed herein is a powder for thermal spraying for forming an electrode of a solid oxide fuel cell or a solid oxide electrolytic cell. This powder for thermal spraying has a peak in a range of 0.15-1 µm inclusive in a log differential pore volume distribution having a pore diameter of 1 µm or less obtained by a mercury press-in method.
To provide a polishing composition that can polish silicon nitride film at a high polishing removal rate and suppress the polishing removal rate for polycrystalline silicon film.
To provide a polishing composition that can polish silicon nitride film at a high polishing removal rate and suppress the polishing removal rate for polycrystalline silicon film.
A polishing composition containing abrasive grains having a negative zeta potential in the polishing composition, and a polyalkylene oxide compound represented by formula (1); and having a pH of less than 7.
Provided is a polishing composition with which it is possible to achieve high HLM rim protrusion resolving ability. Provided is a polishing composition containing abrasive grains, a basic compound, a water-soluble macromolecule A, a water-soluble macromolecule B, and water. The water-soluble macromolecule A is a polymer having a unit structure that is expressed by general formula (1) (In the formula, R1is a hydrocarbon group having 5 or fewer carbon atoms, and R2 is a hydrogen atom or a hydrocarbon group having 3 or fewer carbon atoms.), and the water-soluble macromolecule B is a polymer having no cellulose structure in the molecule.
Provided is a polishing composition with which it is possible to achieve high HLM rim protrusion resolving ability while suppressing the occurrence of defects and residue. Provided is a polishing composition containing abrasive grains, a basic compound, a water-soluble macromolecule, and water. In the abrasive grains, the average secondary particle diameter D2 measured by a dynamic light scattering method is larger than 60 nm. The polishing composition contains, as the water-soluble macromolecule, a water-soluble macromolecule a that is a polymer a having a constituent unit that is expressed by general formula (1) (In the formula, R1is a hydrocarbon group having 5 or fewer carbon atoms, and R2 is a hydrogen atom or a hydrocarbon group having 3 or fewer carbon atoms.).
The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate.
The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate.
The present invention is a polishing composition containing abrasive grains and a quaternary phosphonium salt, in which a pH is less than 7.0, and a zeta potential of the abrasive grains in the polishing composition is −10 mV or less.
The present invention provides a polishing composition with which it is possible to improve the post-polishing surface quality of an object to be polished. The present disclosure relates to a polishing composition containing: (A) abrasive grains; (B) a compound α having a polyethylene oxide structure and a polypropylene oxide structure; (C) a water-soluble polymer different from the compound α; (D) a basic compound; and (E) a dispersion medium. (B) The compound α is contained at 0.0001 mass% or more with respect to the total mass of the polishing composition, and the ratio [{(B) + (C)}/(A)] of the total mass of (B) the compound α and (C) the water-soluble polymer to the mass of (A) the abrasive grains is 0.058 or more and less than 0.150.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing silicon oxynitride (SiON) surfaces. In particular, the CMP composition includes an abrasive, an additive, and water, combined in specified amounts to provide a composition with advantageous properties such as high SiON removal rates even upon dilution of the composition with a diluent.
Molybdenum polishing compositions and methods according to the present disclosure include abrasive particles, a first and a second oxidizers, and a first and a second molybdenum static etch rate suppressors, wherein the pH of the polishing composition is from 4 to 9. Compositions according to the present disclosure are effective to efficiently polish molybdenum at a high removal rate, which achieving a low molybdenum static etch rate, thereby obtaining a high Mo RR/SER ratio. Compositions and methods according to the present disclosure thus result in improved molybdenum polishing processes and higher-quality molybdenum surfaces than are achieved by conventional polishing compositions.
The present invention provides a polishing composition with which it is possible to improve the surface flatness and the ability to eliminate a bump at the periphery of an HLM, while maintaining a polishing rate. Provided is a polishing composition for polishing a silicon wafer. The polishing composition contains: silica particles that serve as abrasive grains; a compound A; a basic compound; and a water-soluble polymer. The compound A has an aliphatic hydrocarbon group a having 11 or less carbon atoms, and an ionic functional group b.
A silica sol which does not gelate, has a high purity, and contains a high concentration of silica particles is provided. A silica sol containing silica particles and water, wherein a product of an average primary particle size of the silica particles and an average circularity of the silica particles is 15.0 or more and 31.2 or less, a concentration of the silica particles is 20 mass % or more, a total organic carbon amount per silica particle is less than 10 mass ppm, when the concentration of the silica particles is 20 mass %, a viscosity at 25° C. is 300 mPa·s or less, and a concentration of a metal impurity is less than 1 mass ppm.
The present invention provides a method capable of increasing a ratio (selection ratio) of a polishing removal rate of silicon oxide or silicon nitride to a polishing removal rate of polysilicon and further reducing residues (preferably organic residues) on a surface of a polished object to be polished. The present invention is a polishing composition containing colloidal silica, an inorganic salt containing no halogen, and a water-soluble polymer, in which a product of a valence number (unit: valency) of an anion of the inorganic salt and a concentration (unit: mM) of the anion in the polishing composition is 57 or more.
The present invention provides a polishing composition which is capable of rapidly removing scratches and exhibits a high polishing rate without deteriorating surface quality. One aspect of the present invention relates to the polishing composition contains abrasive grains having a Mohs hardness of 8 or more, and a dispersing medium, wherein the abrasive grains have two or more local maximum points at different particle sizes in a volume-based particle size distribution measured by a porous electrical resistance method.
There is provided a method for producing a resin member used in a production process of electronic devices capable of suppressing the adhesion of adhering substances to the surface over a long period of term. The method for producing a resin member used in a production process of electronic devices includes: a processing step of applying abrasive processing to the surface of a raw member to set a surface roughness Ra to 100 nm or less and a contact angle of pure water with respect to the surface to 70° or more and less than 110°.
B24B 55/00 - Safety devices for grinding or polishing machinesAccessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
Provided is a polishing pad having a high following performance even when a surface to be polished is a curved face. A polishing pad (1) in an embodiment of the present invention includes a polishing layer (2) having a polishing face (21) and a support layer (3) that is formed from a material softer than the polishing layer (2) and is fixed to a face (22) opposite to the polishing face (21) of the polishing layer (2). The support layer (3) has a hardness of not less than 30 and less than 70 in terms of F hardness.
B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
36.
POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate.
An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate.
The present invention provides a polishing composition including abrasive grains and an acidic compound. The abrasive grains are inorganic particles having an organic acid immobilized on a surface thereof. In a particle size distribution of the abrasive grains measured by a dynamic light scattering method, D90/D10 is 2.2 or more and D50 is 70 nm or more, where D10 is a particle diameter when a cumulative particle mass from a fine particle side reaches 10% of the total particle mass, D50 is a particle diameter when the cumulative particle mass from the fine particle side reaches 50% of the total particle mass, and D90 is a particle diameter when the cumulative particle mass from the fine particle side reaches 90% of the total particle mass.
A method for manufacturing a silica sol according to an embodiment of the present invention includes: a step of preparing a silica sol reaction liquid by hydrolyzing and polycondensing an alkoxysilane or a condensate thereof using an alkali catalyst in a solvent; and at least one of a step of concentrating the silica sol reaction liquid by an ultrasonic atomization separation method and a step of replacing the silica sol reaction liquid with water by the ultrasonic atomization separation method.
To provide a polishing composition that can polish titanium nitride film at a higher polishing removal rate with respect to the polishing removal rate for silicon oxide film (specifically, a high selection ratio expressed removal rate titanium as polishing for nitride film/polishing removal rate for silicon oxide film) and that has high dispersion stability.
To provide a polishing composition that can polish titanium nitride film at a higher polishing removal rate with respect to the polishing removal rate for silicon oxide film (specifically, a high selection ratio expressed removal rate titanium as polishing for nitride film/polishing removal rate for silicon oxide film) and that has high dispersion stability.
A polishing composition containing abrasive grains, an acid, a surfactant, and an oxidizing agent, wherein the abrasive grains have a positive zeta potential, the acid is an inorganic acid, the surfactant contains a compound having a polypropylene glycol structure, the oxidizing agent is hydrogen peroxide, and the pH is 2 or more and 4 or less.
The powder material for additive manufacturing disclosed herein includes tungsten carbide (WC), cobalt (Co), and a carbon additive including carbon (C) as a main constituent element, and the value of a carbon content A (% by mass), which is represented by the following formula: [(mass of C derived from WC)+(mass of C derived from carbon additive)]/(mass of WC)×100, satisfies the condition of 6.4≤A≤7.2.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
The present invention enables to provide plate-like titanium pyrophosphate, having both high uniformity in size and specific particle shape, which is expected to be highly useful. The present invention relates to plate-like titanium pyrophosphate having an aspect ratio of 5 or more expressed as a ratio of the in-plane length DPL50 of primary particles, at which the cumulative frequency from the smaller particle size side is 50% in a volume-based cumulative particle size distribution, to the thickness DPT50 of primary particles, at which the cumulative frequency from the smaller particle size side is 50% in a volume-based cumulative particle size distribution (the in-plane length DPL50 of primary particles/the thickness DPT50 of primary particles), wherein the relationship among the particle size D10 of secondary particles, at which the cumulative frequency from the smaller particle size side is 10% in a volume-based cumulative particle size distribution, the particle size D50 of secondary particles, at which the cumulative frequency from the smaller particle size side is 50% in a volume-based cumulative particle size distribution, and the particle size D90 of secondary particles, at which the cumulative frequency from the smaller particle size side is 90% in a volume-based cumulative particle size distribution, satisfies a specific relationship; and a method for producing the same.
Provided is a polishing composition with excellent machining capacity, and good cleaning property after polishing.
Provided is a polishing composition with excellent machining capacity, and good cleaning property after polishing.
A polishing composition containing abrasive grains, water, and a hydrophobic dispersing medium, wherein the hydrophobic dispersing medium contains at least one selected from the group consisting of normal paraffin hydrocarbons, isoparaffin hydrocarbons, naphthenic hydrocarbons, and terpene hydrocarbons, and has a flash point of 30° C. or more and 100° C. or less, or a vapor pressure at 20° C. of 0.004 kPa or more and 2 kPa or less.
Provided is a powder having a high transmittance that is suitable as a filler for optical materials and resins for which transparency is demanded. The powder of the present invention includes crystalline plate-shaped titanium phosphate particles, in which a ratio of particles having a particle diameter of 0.52 μm or more to 0.87 μm or less is 7.0% by mass or less.
Provided is a means for sufficiently removing residues remaining on the surface of a polished object and reducing the surface roughness of the polished object. The present invention relates to a surface treatment composition containing components (A) to (C), and having pH of more than 7.0:
the component (A): a cyclic amine compound having a nitrogen-containing non-aromatic heterocyclic ring,
the component (B): a nonionic polymer,
the component (C): a buffer represented by a formula: A-COO−NH4+ wherein A is an alkyl group having from 1 to 10 carbon atoms, or a phenyl group.
Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.
Provided is a polishing composition that can reduce increase in temperature of a polishing pad during polishing. The polishing composition provided by the present invention contains water, oxidant A selected from compounds other than peroxide, a first metal salt selected from alkaline-earth metal salts, and a second metal salt selected from salts each of which has a cation of a metal belonging to groups 3 to 16 in the periodic table, and an anion.
Provided is a method for producing a silica sol. A gel-like material cannot be generated and highly associated silica particles can be obtained. A method for producing a silica sol comprises a step of making a reaction liquid by mixing liquid (A) comprising an alkaline catalyst, water, a first organic solvent and silica particles for association with liquid (B) comprising at least one of tetramethoxysilane and a condensate thereof and a second organic solvent, wherein during the mixing, an addition rate of the liquid (B) is 8.5×10−4 to 5.6×10−3 (mol of silicon atoms in liquid (B)/mol of water in liquid (A)) per minute.
The present invention provides technology that enables a decrease in the risk that a powder material will be scattered by imparting energy thereto in an additive manufacturing process. This powder material for additive manufacturing comprises a first material which is constituted by a ceramic and a second material which is constituted by at least one element from among magnesium (Mg), zinc (Zn), molybdenum (Mo), tungsten (W), copper (Cu), aluminum (Al), carbon (C), and silicon (Si). The powder material is constituted by composite particles in which the first material and the second material are mixed.
C22C 29/02 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on carbides or carbonitrides
C22C 29/12 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on oxides
C22C 29/16 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on nitrides
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
B28B 1/30 - Producing shaped articles from the material by applying the material on to a core, or other moulding surface to form a layer thereon
B33Y 70/10 - Composites of different types of material, e.g. mixtures of ceramics and polymers or mixtures of metals and biomaterials
B22F 10/34 - Process control of powder characteristics, e.g. density, oxidation or flowability
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
The present invention provides a polishing composition that allows etching to proceed efficiently. Provided is a polishing composition containing: silica particles as the abrasive grains; a basic compound; and water. Here, the basic compound includes an organic amine A represented by general formula (1) described in claim 1 of the present application, and a basic compound B that is a different basic compound from the organic amine A. Here, in formula (1), R1 is a hydrogen atom or an organic group, and X is an oxygen atom or a sulfur atom.
Provided are a polishing composition, a substrate protection agent, and manufacturing methods therefor, said polishing composition containing a cellulose derivative, and being effective for reducing surface defects after polishing. Provided is a manufacturing method for a polishing composition containing abrasive grains, a basic compound, a cellulose derivative, and a surfactant. Said manufacturing method comprises a step (A) for producing a base cellulose derivative solution by dissolving a base cellulose derivative in a solvent, and either: a step (B1) for heating the base cellulose derivative solution, and a step (B2) for adding a base surfactant to the base cellulose derivative solution that has undergone the step (B1); or a step (C1) for producing an additive-agent mixed liquid by adding a base surfactant to the base cellulose derivative solution, and a step (C2) for heating the additive-agent mixed liquid.
Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.
A polishing composition capable of increasing a polishing selectivity ratio of SiOC to silicon nitride, a production method of the polishing composition, a polishing method, and a manufacturing method of a semiconductor substrate are provided.
A polishing composition capable of increasing a polishing selectivity ratio of SiOC to silicon nitride, a production method of the polishing composition, a polishing method, and a manufacturing method of a semiconductor substrate are provided.
The polishing composition contains abrasives having a zeta potential of −5 mV or less, a cationic surfactant, a phosphonic acid-based chelating agent, and a cationic compound having a molecular weight of 300 or less.
Provided is a polishing composition that enables polishing a resin object to be polished at a high polishing removal rate and enables polishing the surface of a resin object to be polished into a flat and smooth surface. The polishing composition includes abrasives, a surfactant, and water, and the surfactant includes an acetylene compound having a carbon-carbon triple bond and represented by Chemical Formula (1). In Chemical Formula (1), R1, R2, R3, and R4 are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 or more and 20 or less carbon atoms; R5 and R6 are each independently a substituted or unsubstituted alkylene group having 1 or more and 5 or less carbon atoms; m is an integer of 1 or more; n is an integer of 0 or more; and m+n is 50 or less. The polishing composition is used to polish a resin object to be polished.
Provided is a polishing composition that enables polishing a resin object to be polished at a high polishing removal rate and enables polishing the surface of a resin object to be polished into a flat and smooth surface. The polishing composition includes abrasives, a surfactant, and water, and the surfactant includes an acetylene compound having a carbon-carbon triple bond and represented by Chemical Formula (1). In Chemical Formula (1), R1, R2, R3, and R4 are each independently a hydrogen atom or a substituted or unsubstituted alkyl group having 1 or more and 20 or less carbon atoms; R5 and R6 are each independently a substituted or unsubstituted alkylene group having 1 or more and 5 or less carbon atoms; m is an integer of 1 or more; n is an integer of 0 or more; and m+n is 50 or less. The polishing composition is used to polish a resin object to be polished.
Provided is a polishing composition capable of achieving high HLM rim protrusion resolving ability while maintaining a polishing rate. Also provided is a polishing composition for preliminarily polishing the surface of a silicon material. The polishing composition contains abrasive grains, a basic compound, a water-soluble polymer, and water. The water-soluble polymer contains a nonionically modified polyvinyl alcohol-based polymer. Here, the nonionically modified polyvinyl alcohol-based polymer does not include a hydroxyl group in a modified structural unit.
The present invention is to provide a means for reducing surface roughness (Ra) while maintaining a high polishing rate in polishing of an object to be polished containing a resin and a filler. A polishing composition of the present invention comprises alumina particles, colloidal silica particles, and a dispersing medium for use in polishing an object to be polished containing a resin and a filler, in which the alumina particles have an average particle size of less than 2.8 μm, and the colloidal silica particles have an average particle size less than the average particle size of the alumina particles.
Provided is a soft focus filler excellent in both transmittance and haze. The soft focus filler of the present invention includes a powder including plate-shaped crystal particles of titanium phosphate.
Provided are a polishing composition, a polishing method, and a method for manufacturing a substrate.
Provided are a polishing composition, a polishing method, and a method for manufacturing a substrate.
The polishing composition contains polishing abrasive grains, an additive molecule, a pH adjusting agent, and a dispersing medium. The polishing abrasive grains contain silica particles, and the silanol group density on the surface of the silica particles is 0 to 3.0 groups/nm2. The silanol group density is calculated and determined based on the specific surface area measured by the BET method and the amount of silanol groups measured by titration. The pH adjusting agent is used to adjust the pH of the polishing composition to a range of 1.5 or more and 4.5 or less. The additive molecule has a structure represented by Formula (I).
Provided are a polishing composition, a polishing method, and a method for manufacturing a substrate.
The polishing composition contains polishing abrasive grains, an additive molecule, a pH adjusting agent, and a dispersing medium. The polishing abrasive grains contain silica particles, and the silanol group density on the surface of the silica particles is 0 to 3.0 groups/nm2. The silanol group density is calculated and determined based on the specific surface area measured by the BET method and the amount of silanol groups measured by titration. The pH adjusting agent is used to adjust the pH of the polishing composition to a range of 1.5 or more and 4.5 or less. The additive molecule has a structure represented by Formula (I).
Provided are a polishing composition, a polishing method, and a method for manufacturing a substrate.
The polishing composition contains polishing abrasive grains, an additive molecule, a pH adjusting agent, and a dispersing medium. The polishing abrasive grains contain silica particles, and the silanol group density on the surface of the silica particles is 0 to 3.0 groups/nm2. The silanol group density is calculated and determined based on the specific surface area measured by the BET method and the amount of silanol groups measured by titration. The pH adjusting agent is used to adjust the pH of the polishing composition to a range of 1.5 or more and 4.5 or less. The additive molecule has a structure represented by Formula (I).
(In Formula (I), R1, R2, n, m, p, q, and r are as defined in the specification.)
There is provided a thermal spray coating which has excellent plasma erosion resistance, which protects members of a plasma etching device from plasma erosion over a long period of term, and which can contribute to the stable production of devices and a longer life of members. The thermal spray material which is one aspect of this invention contains a composite compound containing a rare earth fluoride in the proportion of 40 mol % or more and 80 mol % or less, a magnesium fluoride in the proportion of 10 mol % or more and 40 mol % or less, and a calcium fluoride in the proportion of 0 mol % or more and 40 mol % or less.
C23C 4/04 - Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
Provided is a polishing composition containing a water-soluble polymer, the polishing composition being capable of achieving a high-quality surface without compromising polishing rate. The polishing composition comprises: silica particles (A) as abrasive particles; a basic compound (B); a modified polyvinyl alcohol-based polymer (C1) as a water-soluble polymer (C); and a chelating agent (D). The modified polyvinyl alcohol-based polymer (C1) exhibits an etching rate of 20 nm/hour or less as determined on the basis of a predetermined etching rate measurement.
Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more at a high polishing speed while reducing surface defects due to polishing. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more, the polishing composition containing a cationically modified silica, a trialkylamine oxide, and an oxidizing agent, wherein the content of the trialkylamine oxide is 3 mass ppm or more and 40 mass ppm or less with respect to the total mass of the polishing composition, and the pH is less than 5.
The present invention provides means for preventing sedimentation of abrasive grains and improving redispersibility of abrasive grains, while improving polishing performance. The present invention relates to a polishing composition comprising abrasive grains, an oxidant, a metal cation exhibiting a hydrated metal ion pKa of less than 7.0, a metal salt A which is a salt with an anion, a layered compound, and a dispersant, the polishing composition including the metal salt A at a concentration of 8 mM or more.
Provided is a polishing composition in which a polishing speed of silicon germanium is sufficiently high and a selection ratio of the polishing speed of silicon germanium is sufficiently high. A polishing composition includes: abrasive grains; an inorganic salt; and an oxidizing agent, in which the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm2 and 2.0/nm2 or less, and a pH of the polishing composition is 6.0 or more.
A titanium phosphate powder containing plate-like particles with a reduced content ratio of byproducts other than the plate-like particles, and exhibiting crystallinity of titanium phosphate represented by a chemical formula Ti(HPO4)2·nH2O (0≤n≤1) is provided in the present disclosure. The present disclosure relates to a method for producing a titanium phosphate powder exhibiting crystallinity of titanium phosphate represented by a chemical formula Ti(HPO4)2·nH2O (0≤n≤1), and containing plate-like particles, the method comprising putting an acidic raw material aqueous solution containing phosphorus and titanium in a sealed vessel, and storing the sealed vessel containing the raw material aqueous solution for a period of 2 hours or more, with the ambient temperature of the sealed vessel maintained under a constant temperature condition within a range of 40° C. or more and less than 100° C., wherein during the storage, the raw material aqueous solution is not stirred, or during the storage, the raw material aqueous solution is stirred, and in the case where the raw material aqueous solution is stirred during the storage, a swirl flow rate in stirring the raw material aqueous solution is within a range of more than 0 m/s and 0.30 m/s or less.
The present invention is to provide a means for reducing residual abrasive grains on a surface of an object to be polished after polishing. The polishing composition of the present invention comprises abrasive grains and a dispersing medium, wherein the abrasive grains are silica particles having an average particle size (D50) of more than 1.0 μm and a circularity of primary particles of 0.90 or more.
Provided is a white pigment for cosmetics, and the white pigment has a higher function as a base pigment than that of titanium oxide. A white pigment for cosmetics of the present invention includes a titanium phosphate powder having a whiteness of 92.91 or more as determined in accordance with JIS Z 8715.
Provided is a powder having excellent hiding power, such that the powder can be used in place of titanium dioxide as a white pigment in a cosmetic. The powder of the present invention includes plate-shaped crystal particles, the volume D50% diameter thereof is 0.7 μm or more and 8.0 μm or less, and a coefficient of variation (CV value) of a primary particle diameter is 1.0 or less.
Provided is a method that enables good cleaning of a polished substrate formed of a high-hardness material. Provided is a method of polishing and cleaning a substrate formed of a material having a Vickers hardness of 1500 Hv or more. The method includes: polishing a substrate to be polished using a polishing composition; and cleaning the polished substrate using a cleaner. The polishing composition contains a polishing auxiliary. Furthermore, the cleaner contains a surfactant.
METHOD FOR PRODUCING WETTING AGENT FOR SEMICONDUCTOR, CONTAINING POLYVINYL ALCOHOL COMPOSITION, POLISHING COMPOSITION CONTAINING WETTING AGENT FOR SEMICONDUCTOR, OBTAINED BY THE PRODUCTION METHOD, AND METHOD FOR PRODUCING POLISHING COMPOSITION
To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition.
To provide a polyvinyl alcohol composition effectively suppressed in generation of an aggregated product, in a method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition.
A method for producing a wetting agent for a semiconductor, containing a polyvinyl alcohol composition, wherein the polyvinyl alcohol composition is obtained through an addition-in-liquid step of adding into the inside of any one solution of a first liquid containing polyvinyl alcohol and water and a second liquid other than the first liquid, the other liquid of the first liquid and the second liquid.
C08J 3/07 - Making solutions, dispersions, lattices or gels by other methods than by solution, emulsion or suspension polymerisation techniques in aqueous media from polymer solutions
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
71.
COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING AND METHOD FOR USING COMPOSITION
[Problem] To provide a chemical-mechanical polishing (CMP) composition for polishing a molybdenum surface. [Solution] Provided is a CMP composition comprising, in specific amounts, abrasive grains, a molybdenum (Mo) removal rate enhancer, a TEOS removal rate enhancer, an oxidizer, and water. The CMP composition maintains a high Mo (RR) removal rate : Mo (ER) etching rate selectivity, and exhibits advantageous properties such as a high Mo and TEOS removal rate.
Provided is an absorption method of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table. The method includes: preparing mesoporous alumina that satisfies at least one of the following items:
(1) a surface hydroxyl content is 3.5 mmol/g or more;
(2) a low-temperature CO2 desorption amount in CO2 thermal desorption amount spectrometry is 5 µmol/g or more; and
(3) a low-temperature NH3 desorption amount in NH3 thermal desorption amount spectrometry is 25 µmol/g or more; and
bringing a liquid containing an absorption target element in contact with the mesoporous alumina to absorb the absorption target element in the mesoporous alumina. The absorption target element is at least one type selected from the group consisting of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table.
B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
B01J 20/08 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising oxides or hydroxides of metals not provided for in group comprising aluminium oxide or hydroxideSolid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising oxides or hydroxides of metals not provided for in group comprising bauxite
Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.
Provided is a means capable of sufficiently removing residues on a surface of an object to be polished while polishing the object to be polished at a moderate speed.
Provided is a means capable of sufficiently removing residues on a surface of an object to be polished while polishing the object to be polished at a moderate speed.
Provided is a polishing composition containing: anionically-modified colloidal silica; a dispersing medium; an anionic water-soluble polymer which is a copolymer including a structural unit having a sulfonic acid group or a salt group thereof and a structural unit having a carboxy group or a salt group thereof; a polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; a nitrogen-free non-ionic polymer other than the polypropylene glycol having a weight average molecular weight of 200 or more and 700 or less; and a nitrogen-containing non-ionic polymer.
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
The present invention provides a means capable of further improving stability and washability under acidic conditions. The present invention is sulfonic acid-modified colloidal silica having an amount of sulfonic acid groups per 1 g of particles of 1.5 μmol/g or more and 13.0 μmol/g or less.
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more:
component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below,
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more:
component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below,
component (B): a buffer represented by a formula: R—COO—NH4+.
The silicon carbide powder is a powder of silicon carbide having an α-type crystal system, where the number of small corner portions among corner portions on a surface of a primary particle of silicon carbide constituting the powder of silicon carbide is 2.5 or less per one primary particle. The small corner portion is a corner portion, among corner portions present in a contour of the primary particle in a projection image of the primary particle, where twice a curvature radius of the corner portion is 1/5 or less of a Heywood diameter of the projection image of the primary particle.
[Problem] To provide a polishing composition and a polishing method which enable barrier polishing at a removal speed ratio that is controllable for tantalum, cobalt and copper. [Solution] A polishing composition comprising small (about 12 nm) anionic modified abrasive particles, a metal corrosion inhibitor, and a phosphate surfactant can achieve a selectivity for Co from Ta of 10 or more and a selectivity for Co from Cu of about 1.
[Problem] To provide a columnar zinc oxide manufacturing method whereby columnar zinc oxide can be obtained at a high content ratio. [Solution] A columnar zinc oxide manufacturing method that includes a step for preparing a sheet-shaped zinc compound having an electrical conduction rate of 0.5 mS/cm or lower in a supernatant liquid, and a step for heating a dispersion liquid containing the sheet-shaped zinc compound and a dispersion medium to 50°C or higher, said heating being carried out such that the weight change rate of the dispersion liquid from before to after heating is 2% or less.
The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.
Means capable of sufficiently removing residues remaining on a surface of a polished object containing silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon is provided. A composition for surface treatment, comprising: a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, wherein the nitrogen-free nonionic polymer has a weight-average molecular weight of less than 100,000, the ratio of a weight-average molecular weight of the nitrogen-containing nonionic polymer to the weight-average molecular weight of the nitrogen-free nonionic polymer (nitrogen-containing nonionic polymer/nitrogen-free nonionic polymer) is 0.1 or more and 10 or less, and the composition for surface treatment has a pH of less than 7.0.
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing components (A) to (C), and having pH of more than 7.0:
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing components (A) to (C), and having pH of more than 7.0:
the component (A): a quaternary nitrogen-containing onium salt compound having at least one of a linear or branched alkyl group having 7 or more carbon atoms and a linear or branched alkenyl group having 7 or more carbon atoms,
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing components (A) to (C), and having pH of more than 7.0:
the component (A): a quaternary nitrogen-containing onium salt compound having at least one of a linear or branched alkyl group having 7 or more carbon atoms and a linear or branched alkenyl group having 7 or more carbon atoms,
the component (B): a nonionic polymer,
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing components (A) to (C), and having pH of more than 7.0:
the component (A): a quaternary nitrogen-containing onium salt compound having at least one of a linear or branched alkyl group having 7 or more carbon atoms and a linear or branched alkenyl group having 7 or more carbon atoms,
the component (B): a nonionic polymer,
the component (C): a buffer represented by a formula:
A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing components (A) to (C), and having pH of more than 7.0:
the component (A): a quaternary nitrogen-containing onium salt compound having at least one of a linear or branched alkyl group having 7 or more carbon atoms and a linear or branched alkenyl group having 7 or more carbon atoms,
the component (B): a nonionic polymer,
the component (C): a buffer represented by a formula:
A-COO—NH4+.
Provided is a polishing composition that can achieve an excellent polishing/removal rate for a polishing target. The polishing composition provided by the present invention is used for polishing a polishing target. The polishing composition contains water, sodium permanganate that functions as an oxidizer, and a transition metal salt that is different from the oxidizer. The oxidizer is contained in an amount more than 10 wt%. In some preferable modes, the transition metal salt is an oxy-transition metal salt or a multinuclear transition metal complex formed of a transition metal and oxygen and/or hydrogen. The polishing composition can be preferably applied for polishing of a polishing target that is composed of a high-hardness material having a Vickers hardness of 1500 Hv or more.
The present invention relates to a polishing composition including abrasive grains and a dispersion medium, wherein the pH is less than 5.0, the abrasive grains comprise surface-modified silica particles having an organic acid immobilized on surfaces thereof, the surface coverage of silanol groups present on the surfaces of the surface-modified silica particles is more than 0% but not more than 6.0%, and the average primary particle diameter of the abrasive grains is 20-100 nm inclusive. According to the present invention, the polishing speed of a silicon oxide film is improved, and a means for polishing a silicon oxide film and a silicon nitride film at approximately the same speed is provided.
The present invention provides a polishing composition that can realize a high-quality surface. The polishing composition includes silica particles (A), a basic compound (B), a first water-soluble polymer (C1), a second water-soluble polymer (C2), and water (D), wherein the first water-soluble polymer (C1) is a polyvinyl alcohol-based polymer. The product (ER×ζ) of the etching rate ER [μm/h] of the polishing composition and the zeta potential ζ [mV] of the polishing composition is -900 nmV/h to -90 nmV/h inclusive.
C08L 29/04 - Polyvinyl alcoholPartially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
C08L 101/14 - Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity the macromolecular compounds being water soluble or water swellable, e.g. aqueous gels
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
5050) exceeds 1.0 μｍ and in which the circularity of primary particles is 0.90 or more, and a dispersion degree D of the abrasive grains is 2.0 or less.
Provided is a polishing composition capable of imparting a high surface quality and improving the polishing rate. Specifically provided is a polishing composition containing: silica particles that serve as abrasive grains; a basic compound; water; a cellulose derivative as a first water-soluble polymer; a polyvinyl alcohol-based polymer as a second water-soluble polymer; and a nitrogen atom-containing polymer as a third water-soluble polymer. In the polishing composition, the ratio (C1/(C2+C3)) of the content C1 of the first water-soluble polymer with respect to the total of the content C2 of the second water-soluble polymer and the content C3 of the third water-soluble polymer is 0.1 or greater.
Provided is a polishing composition capable of imparting a high surface quality and improving the polishing rate. Specifically provided is a polishing composition containing: silica particles (A); a basic compound (B); a first water-soluble polymer (C1); a second water-soluble polymer (C2); and an alkali metal salt of an inorganic acid (D) (excluding alkali metal carbonates).
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces. In particular, the CMP composition includes an abrasive, a molybdenum (Mo) etching inhibitor, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo:TEOS removal rate selectivity and/or high Mo:SiN removal rate selectivity.
Provided is a white pigment for cosmetics capable of giving a cosmetic having an excellent performance smoothly applicable onto the skin. A white pigment for cosmetics of the present invention includes a titanium phosphate powder, the titanium phosphate powder includes crystal particles of titanium phosphate, and the titanium phosphate powder has an average friction coefficient (MIU) of less than 1.45.
MITSUBISHI HEAVY INDUSTRIES AERO ENGINES, LTD. (Japan)
FUJIMI INCORPORATED (Japan)
TOCALO CO., LTD. (Japan)
Inventor
Kinouchi, Arata
Masuda, Takaya
Habu, Yoichiro
Takagi, Kaito
Noda, Kazuo
Abstract
A method for applying a thermal barrier coating according to one embodiment includes a step for forming a topcoat layer on a bond coat layer formed on a heat-resistant alloy substrate of an object. In the step for forming the topcoat layer, the topcoat layer is formed by spraying a suspension including ceramic powder by atmospheric pressure plasma spraying while cooling a part of plasma flame by supplying water as a cooling fluid around the plasma flame at a supply rate of 25-100 ml/min (inclusive).
F01D 5/28 - Selecting particular materialsMeasures against erosion or corrosion
F01D 25/00 - Component parts, details, or accessories, not provided for in, or of interest apart from, other groups
F02C 7/00 - Features, component parts, details or accessories, not provided for in, or of interest apart from, groups Air intakes for jet-propulsion plants
92.
POLISHING COMPOSITION, POLISHING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
To provide means for improving a ratio of a polishing speed of SiOC to a polishing speed of SiN. There is provided a polishing composition containing: abrasive grains containing at least one kind of zirconia particles; a selection ratio improver containing at least one kind of a salt composed of a monovalent anion and a monovalent or higher valent cation and improving a ratio of a polishing speed of SiOC to a polishing speed of SiN; and a pH adjusting agent containing at least one kind of an acid, in which a pH is more than 3.0 and less than 7.0, and a zeta potential of the abrasive grain is a positive value.
DISPERSION FOR SINTERED-CERAMIC OBJECT FORMATION, GREEN SHEET FOR SINTERED-CERAMIC OBJECT FORMATION, PREPREG FOR SINTERED-CERAMIC OBJECT FORMATION, AND SINTERED CERAMIC OBJECT
The present invention provides a means whereby a dispersion for sintered-ceramic object formation comprising ceramic particles, a resin, and a plasticizer is inhibited from suffering the bleeding-out of some of the components during the formation of a sintered ceramic object. This invention relates to a dispersion for sintered-ceramic object formation comprising the following (A) to (D) components and having a pH at 25°C of 4.0 or higher: (A) component, ceramic particles; (B) component, a resin; (C) component, a plasticizer; and (D) component, water.
[Problem] To provide a polishing composition and method capable of controlling the SiN removal rate. [Solution] According to the present invention, a polishing composition that contains water, a SiN polishing rate inhibitor, and a polishing agent including cationic particles and that has a pH lower than 5 can reduce the SiN polishing rate with respect to a second material X (e.g., spin-on carbon). In addition, a polishing composition that contains water, a SiN polishing rate accelerator, and a polishing agent including cationic particles, and that has a pH not lower than 5 can increase the SiN polishing rate with respect to the second material X (e.g., spin-on carbon).
The present invention provides a means which makes it possible to polish a target object at a high polishing rate and also makes it possible to maintain the surface quality of the polished target object at a good level. The present invention is a polishing composition comprising abrasive grains and a basic compound, in which the basic compound comprises ammonia and a piperazine compound, and the content ratio C1 of the piperazine compound represented by formula (1) is more than 0% and 5.5% or less when the content of the ammonia in the polishing composition is defined as A1 (unit: % by mass) and the content of the piperazine compound in the polishing composition is defined as B1 (unit: % by mass).
Provided is a polishing method that can efficiently achieve a surface of a super-hard material from which latent defects are precisely eliminated. The polishing method provided by the present invention is used for polishing a substrate made of a material having a Vickers hardness of 1500 Hv or higher. The polishing method includes: a step of carrying out preliminary polishing on the substrate using a preliminary polishing composition; and a step of carrying out final polishing on the preliminarily polished substrate using a final polishing composition. Here, a surface roughness RaPRE of the preliminarily polished substrate measured by an AFM is 0.1 nm or less, and a polishing removal in the final polishing step is 0.3 µm or more.
The present invention provides means capable of imparting high temporal stability to a hardening aid solution which serves as a raw material and capable of imparting high strength and high quality stability to a hardened body of the self-hardening material, in the hardened body of the self-hardening material that contains a ceramic powder containing Si element at least on the surface thereof. The present invention relates to a hardening aid solution containing Si element, an alkali, and a dispersing medium, wherein the dispersing medium contains water; a dissolution concentration of the Si element is 20000 mass ppm or more; the number of moles of the alkali present in 1 kg of the dispersing medium is 2 mol/kg or more; an absolute value of an amount of change in a dissolution concentration of Si element in a solution obtained by diluting the hardening aid solution by 2 times based on the mass using an aqueous KOH solution having a concentration of 3 mol/L is 2000 mass ppm or less, between before and after a heat dissolution test including heating the solution at a solution temperature of 80° C. for 5 hours, and then allowing the solution to stand in an ambient environment at 25° C. for 1 hour; and the hardening aid solution is used for hardening a powder containing a ceramic powder containing Si element at least on the surface thereof.
C04B 35/626 - Preparing or treating the powders individually or as batches
C04B 35/14 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on silica
98.
POLISHING COMPOSITIONS FOR SILICON CARBIDE SURFACES AND METHODS OF USE THEREOF
The present disclosure relates to chemical-mechanical polishing (CMP) compositions for polishing polycrystalline silicon carbide-containing surfaces. More particularly, the polishing compositions are in the form of a slurry with a pH of 8 or more comprising an oxidant and an abrasive.
Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.
Provided is a method for producing a porous metal oxide. The method includes: preparing a slurry by mixing a metal source, a pore forming agent and an aqueous solvent; drying the slurry to obtain a metal oxide precursor; and sintering the metal oxide precursor to generate a porous metal oxide. The metal source is an organometallic compound or hydrolyzate thereof containing a metal that makes up the porous metal oxide; the pore forming agent is an inorganic compound that generates a gas by decomposing at a temperature equal to or lower than a temperature at which the metal oxide precursor is sintered; and the slurry is prepared using 50 parts by weight or more of the pore forming agent with respect to 100 parts by weight of the metal source.
