11 is greater than 138,000 and less than 950,000 on the basis of the acetalization degree m [%] of the acetalized polyvinyl alcohol, the number of carbons C of R111 of the acetalized polyvinyl alcohol. (R1 is a hydrocarbon group, and the hydrocarbon group may be substituted with a functional group).
Provided is a polishing composition that offers suitable wettability of a surface after polishing and can effectively suppress defects such as haze lines. The polishing composition contains abrasive grains, a basic compound, an acetalized polyvinyl alcohol, and water. The acetalized polyvinyl alcohol includes a unit represented by formula (I) and a vinyl alcohol unit. The acetalization degree of the acetalized polyvinyl alcohol is more than 8% and less than 19%. (R1 is a hydrocarbon group.)
An object of the present invention is to provide a new polishing composition that can suppress the number of PIDs after polishing while controlling a selectivity. Provided is a polishing composition comprising colloidal silica, an alkali metal salt, and a polymer compound having an amide bond, the polishing composition having a pH of 9.0 to 11.5, (i) wherein the polishing composition is used in a step of polishing a second layer to expose a first layer in an object to be polished including the first layer provided with a recess portion and the second layer formed to fill the inside of the recess portion, and wherein the first layer is selected from the group consisting of a layer having an oxygen-silicon bond and a layer having a nitrogen-silicon bond, and the second layer has a silicon-silicon bond; and/or (ii) wherein the number of silanol groups in the colloidal silica is 6/nm2 or more and 22/nm2 or less.
An object of the present invention is to provide a new polishing composition that can reduce remaining of an object to be polished, which has to be polished, such as polysilicon, and suppress recesses. Provided is a polishing composition comprising colloidal silica; an alkali metal salt; polyalkylene glycol; at least one selected from the group consisting of a cellulose derivative and a polymer compound X; and water, the polishing composition having a pH of 9.0 to 11.5, the polymer compound X containing a repeating unit represented by the following formula (1):
An object of the present invention is to provide a new polishing composition that can reduce remaining of an object to be polished, which has to be polished, such as polysilicon, and suppress recesses. Provided is a polishing composition comprising colloidal silica; an alkali metal salt; polyalkylene glycol; at least one selected from the group consisting of a cellulose derivative and a polymer compound X; and water, the polishing composition having a pH of 9.0 to 11.5, the polymer compound X containing a repeating unit represented by the following formula (1):
wherein A is a group selected from at least one kind of the followings:
An object of the present invention is to provide a new polishing composition that can reduce remaining of an object to be polished, which has to be polished, such as polysilicon, and suppress recesses. Provided is a polishing composition comprising colloidal silica; an alkali metal salt; polyalkylene glycol; at least one selected from the group consisting of a cellulose derivative and a polymer compound X; and water, the polishing composition having a pH of 9.0 to 11.5, the polymer compound X containing a repeating unit represented by the following formula (1):
wherein A is a group selected from at least one kind of the followings:
wherein m is an integer of 1 to 5; R1 to R4 are each independently selected from the group consisting of a hydrogen atom and an alkyl group having 1 to 4 carbon atoms, wherein R1 and R2 may form a ring and, in a case where the ring is formed, at least one oxygen atom may be contained in the ring, and wherein R3 and R4 may form a ring and, in a case where the ring is formed, at least one oxygen atom may be contained in the ring; and at least one oxygen atom may be contained in a ring in the formula 1-1,
the polymer compound X optionally further containing a repeating unit represented by the following formula (2):
An object of the present invention is to provide a new polishing composition that can reduce remaining of an object to be polished, which has to be polished, such as polysilicon, and suppress recesses. Provided is a polishing composition comprising colloidal silica; an alkali metal salt; polyalkylene glycol; at least one selected from the group consisting of a cellulose derivative and a polymer compound X; and water, the polishing composition having a pH of 9.0 to 11.5, the polymer compound X containing a repeating unit represented by the following formula (1):
wherein A is a group selected from at least one kind of the followings:
wherein m is an integer of 1 to 5; R1 to R4 are each independently selected from the group consisting of a hydrogen atom and an alkyl group having 1 to 4 carbon atoms, wherein R1 and R2 may form a ring and, in a case where the ring is formed, at least one oxygen atom may be contained in the ring, and wherein R3 and R4 may form a ring and, in a case where the ring is formed, at least one oxygen atom may be contained in the ring; and at least one oxygen atom may be contained in a ring in the formula 1-1,
the polymer compound X optionally further containing a repeating unit represented by the following formula (2):
wherein A is a hydroxy group,
(i) wherein the polishing composition is used in a step of polishing a second layer to expose a first layer in an object to be polished including the first layer provided with a recess portion and the second layer formed to fill the inside of the recess portion, and wherein the first layer is selected from the group consisting of a layer having an oxygen-silicon bond or a layer having a nitrogen-silicon bond, and the second layer has a silicon-silicon bond; and/or (ii) wherein the number of silanol groups in the colloidal silica is 6/nm2 or more and 22/nm2 or less.
The present disclosure provides a means capable of reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure is a polishing composition containing abrasive grains, an inorganic salt, an organic onium salt, in which the organic onium salt contains at least one of a tetraalkylammonium salt represented by Chemical Formula 1 below or a tetraalkylphosphonium salt represented by Chemical Formula 2 below, and a zeta potential of the abrasive grains in the polishing composition is negative:
The present disclosure provides a means capable of reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure is a polishing composition containing abrasive grains, an inorganic salt, an organic onium salt, in which the organic onium salt contains at least one of a tetraalkylammonium salt represented by Chemical Formula 1 below or a tetraalkylphosphonium salt represented by Chemical Formula 2 below, and a zeta potential of the abrasive grains in the polishing composition is negative:
in the Chemical Formula 1 and the Chemical Formula 2,
R1 to R8 each independently represent an unsubstituted alkyl group having 1 or more and 4 or less carbon atoms, and
A− and X− each independently represent a monovalent anion.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing silicon (Si) surfaces. In particular, the CMP composition includes a first and second removal rate enhancer and a silica abrasive to provide a composition with advantageous properties such as high Si removal rate while also maintaining low polish debris formation.
Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one metal-containing oxidizer.
An object of the present invention is to provide a polishing composition that can polish objects to be polished, including organic films, at a high rate. A further object of the present invention is to provide a polishing composition that can suppress remaining of abrasive grains after polishing. A polishing composition for polishing an object to be polished, comprising abrasive grains and a liquid medium, wherein the abrasive grains comprise zirconia particles, and wherein the zirconia particles have an effective elasticity ratio of 50 to 220 GPa.
An object is to provide a polishing composition capable of reducing a polishing removal rate of polysilicon. An object is to provide a means capable of reducing a polishing removal rate of polysilicon and further reducing defects on a surface of polysilicon after polishing. A polishing composition contains abrasive grains and a polishing removal rate inhibitor that reduces a polishing removal rate of polysilicon, and the polishing removal rate inhibitor is a water-soluble polymer meeting all requirements below: 1) a number average molecular weight is 200 or more and 600 or less; 2) a compound having a repeating unit formed of AO in which A is an alkylene group and O is an oxygen atom is contained; and 3) a compound having a special repeating unit in which two oxygen atoms are further added to the repeating unit is contained in an amount of more than 0 mass % and less than 0.1 mass % with respect to the entire water-soluble polymer.
The purpose of the present invention is to provide a novel method for producing a polishing composition and a novel method for producing a rinse composition, which enables reducing coarse particles and enables suppressing generation of defects. The method for producing a polishing composition includes preparing a first liquid by providing an abrasive grain dispersion containing abrasive grains and water, and filtering the abrasive grain dispersion; preparing a second liquid by providing at least one chemical component-containing aqueous solution containing a chemical component and water, and filtering the aqueous solution when one chemical component-containing aqueous solution is provided, or filtering a mixture X containing at least one chemical component-containing aqueous solution; and mixing the first liquid and the second liquid to prepare a third liquid, and filtering the third liquid.
Provided is a polishing composition that can reduce post-polishing haze at the surface of a polished object. A polishing composition according to the present invention includes a silica sol that includes silica particles that have an average aspect ratio of at least 1.50, the percentage of silica particles in the silica sol that have an aspect ratio of at least 1.50 being at least 40%.
[Problem] To provide a technique for obtaining a new zinc oxide having little variation in particle size and aspect ratio, to provide a zinc oxide having a new average aspect ratio which has not been proposed in the prior art, and to provide a new zinc oxide production method which has not been proposed in the prior art. [Solution] A zinc oxide particle aggregate satisfying at least one of the following conditions: i) an average aspect ratio of 2.0-19.4 with a standard deviation of the aspect ratio being less than 2.0; ii) a standard deviation of a major axis of a plurality of zinc oxide particles being 4.5 μm or less; and iii) an average aspect ratio of more than 10.
Provided is a polishing composition capable of improving the polishing speed in the preliminary polishing of a silicon wafer. The present disclosure relates to a polishing composition used in the preliminary polishing of a silicon wafer, the polishing composition containing abrasive grains and at least one imidazole compound selected from the group consisting of imidazole and derivatives thereof (excluding 1-(3-aminopropyl)imidazole), the content of the imidazole compound being 0.005 mass% or more and less than 0.08 mass% in relation to the total mass of the polishing composition.
The present invention provides a polishing composition wherein combustive properties are reduced despite the use of sodium permanganate as an oxidizing agent, and solubility is not diminished. A polishing composition disclosed herein contains sodium permanganate that serves as an oxidizing agent, a metal salt A, and water. With respect to the metal salt A, (i) the metal salt A is a salt of an anion and a cation a that contains a metal having a pKa of a hydrated metal ion of 7.0 or more, and (ii) the solubility in water at 20°C of a permanganate salt of the cation a is equal to or lower than that of sodium permanganate. The concentration CA of the metal salt A is 200 mM to 550 mM inclusive. In addition, the content of sodium permanganate is more than 1% by weight.
Systems and methods are provided for chemical planarization. The polishing composition for polishing the wafer includes an abrasive, a pH adjuster, and an oxidizer while the rinse composition for rinsing the wafer includes at least one polymer and a pH adjuster. A ratio of an oxidation-reduction potential of the rinse composition to an oxidation-reduction potential of the polishing composition is greater than 0 and less than 0.76.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
An object of the present invention is to provide a polishing composition that can polish objects to be polished, including organic films, at a high rate. A further object of the present invention is to provide a polishing composition that can suppress remaining of abrasive grains after polishing. A polishing composition for polishing an object to be polished, comprising abrasive grains and a liquid medium, wherein the abrasive grains comprise zirconia particles, and wherein the zirconia particles have a Zr—C ratio of 5.5 to 21%.
There are provided a polishing composition and a polishing method that enable high-speed polishing of simple-substance silicon under acidic conditions. A polishing composition for polishing simple-substance silicon contains: abrasives; and an adsorbing compound, in which, the pH is 1 or more and 6 or less, when a substrate having a surface containing simple-substance silicon is subjected to polishing of the surface using an aqueous solution containing the adsorbing compound and water, and then the adhesion force of the abrasives to the surface of the polished substrate and the coverage of the adsorbing compound are measured, a value obtained by multiplying the adhesion force and the coverage is more than 50 and less than 100, the adhesion force is attachment strength between the abrasives and the surface of the substrate calculated by the force curve measurement using a probe provided in an atomic force microscope, the probe contains the same material as that of the abrasives and has a tip portion having the same radius of curvature as that of the abrasives, and the coverage is the ratio of the area of a part covered with the adsorbing compound of the surface of the substrate to the area of the entire surface of the substrate.
There are provided a slurry composition suppressed in a change in physical properties and capable of being imparted with stable polishing performance even after stored over a long period of time, a method for storing the slurry composition, a method for producing a CMP slurry, and a polishing method.
There are provided a slurry composition suppressed in a change in physical properties and capable of being imparted with stable polishing performance even after stored over a long period of time, a method for storing the slurry composition, a method for producing a CMP slurry, and a polishing method.
A slurry composition contains: colloidal silica; and an acidic compound, in which the pH is less than 7, the colloidal silica has a surface modified by an aminosilane coupling agent, and, when the average secondary particle diameter of the colloidal silica is set to dp [mm], the ratio of the volume of the colloidal silica to the volume of the slurry composition is set to F, and the ratio of circumference of circle to its diameter is set to π, the average distance between particle surfaces h of the colloidal silica represented by Equation (1) is less than 65 nm,
There are provided a slurry composition suppressed in a change in physical properties and capable of being imparted with stable polishing performance even after stored over a long period of time, a method for storing the slurry composition, a method for producing a CMP slurry, and a polishing method.
A slurry composition contains: colloidal silica; and an acidic compound, in which the pH is less than 7, the colloidal silica has a surface modified by an aminosilane coupling agent, and, when the average secondary particle diameter of the colloidal silica is set to dp [mm], the ratio of the volume of the colloidal silica to the volume of the slurry composition is set to F, and the ratio of circumference of circle to its diameter is set to π, the average distance between particle surfaces h of the colloidal silica represented by Equation (1) is less than 65 nm,
[
Math
.
1
]
h
=
d
p
{
(
3
3
π
f
+
5
6
)
-
1
}
.
(
1
)
The present disclosure provides a polishing composition used for polishing an object to be polished containing a resin material, wherein a silica particle, and water are contained, and the silica particle has a secondary particle size D50 of 50 nm or more.
Provided is a method for producing a silica sol capable of increasing the ratio of heteromorphized silica particles. A method for producing a silica sol according to an aspect of the present disclosure includes a step of preparing a first liquid including silica core particles having an average value of longest diameters of primary particles of 20 nm or less, and a step of preparing a second liquid including linked silica core particles by holding the first liquid for 72 hours or longer.
The present invention provides a polishing composition with which it is possible to achieve an excellent polishing removal rate on an object to be polished through improving the solubility of potassium permanganate in the composition for polishing. A polishing composition disclosed herein includes potassium permanganate as an oxidizing agent, a metal salt A, and water. Here, the metal salt A is a salt of a cation a containing a metal having a hydrated metal ion pKa of 7.0 or more (excluding alkaline earth metal cations) and an anion, and a permanganate of the cation a has the same or larger solubility in water at 20°C than potassium permanganate. Also, the content of the potassium permanganate is 5.0 wt% or more, and the ratio (CA/CK) of the concentration CA [mM] of the metal salt A to the concentration CK [mM] of the potassium permanganate is larger than 0.1.
Provided is a polishing composition that can exhibit an excellent polishing removal rate and has a suitably suppressed combustion promoting property. A polishing composition disclosed herein comprises: sodium permanganate and potassium permanganate as an oxidizing agent; abrasive grains composed of a material having a Mohs hardness of 6 or more; and water. The ratio (CK/CS) of the concentration CK [mM] of the potassium permanganate to the concentration CS [mM] of the sodium permanganate is 0.33 or more. The content of the sodium permanganate is less than 22.5 wt%.
Provided is a polishing composition with which it is possible to effectively eliminate a partial protrusion that could be present on the surface of an object being polished while maintaining a polishing rate. The provided polishing composition includes abrasive grains, a basic compound, an additive A, and water. The additive A is a salt of an inorganic anion containing two or more phosphorus atoms.
Provided is a polishing composition with which protuberance eliminating capability at the edge of a laser marking can be improved while maintaining polishing rate. Provided is a polishing composition for preliminary polishing of a silicon wafer having a laser marking. The polishing composition contains abrasive grains, a basic compound, a water-soluble polymer, and an anionic surfactant.
The present disclosure is to provide means capable of improving a polishing removal rate of an object to be polished (particularly, silicon oxide) and reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure provides a polishing composition containing abrasive grains in which an average primary particle size is 1 nm or more and 150 nm or less, and a dispersing medium, in which an aggregation rate of the abrasive grains is 40% or more and less than 75%.
The present disclosure provides a means capable of reducing defects on a surface of a resin material after polishing while maintaining a high polishing removal rate in polishing of a polishing target containing a resin material.
The present disclosure provides a means capable of reducing defects on a surface of a resin material after polishing while maintaining a high polishing removal rate in polishing of a polishing target containing a resin material.
The present disclosure is a polishing composition used for polishing a polishing target containing a resin material, the polishing composition containing water and alumina particles, in which, in the alumina particles, when a particle size at which a cumulative frequency from a small particle size side is 2% in a volume-based particle size distribution is denoted by D2, a particle size at which a cumulative frequency from a small particle size side is 50% in a volume-based particle size distribution is denoted by D50, a particle size at which a cumulative frequency from a small particle size side is 98% in a volume-based particle size distribution is denoted by D98, a BET specific surface area is denoted by SA, and a theoretical specific surface area calculated from the D50 is denoted by SA′, a degree of deformity N represented by formula (1) below satisfies a relationship of formula (2) below, and a degree of distortion S represented by formula (3) below satisfies a relationship of formula (4) below.
The present disclosure provides a means capable of reducing defects on a surface of a resin material after polishing while maintaining a high polishing removal rate in polishing of a polishing target containing a resin material.
The present disclosure is a polishing composition used for polishing a polishing target containing a resin material, the polishing composition containing water and alumina particles, in which, in the alumina particles, when a particle size at which a cumulative frequency from a small particle size side is 2% in a volume-based particle size distribution is denoted by D2, a particle size at which a cumulative frequency from a small particle size side is 50% in a volume-based particle size distribution is denoted by D50, a particle size at which a cumulative frequency from a small particle size side is 98% in a volume-based particle size distribution is denoted by D98, a BET specific surface area is denoted by SA, and a theoretical specific surface area calculated from the D50 is denoted by SA′, a degree of deformity N represented by formula (1) below satisfies a relationship of formula (2) below, and a degree of distortion S represented by formula (3) below satisfies a relationship of formula (4) below.
Degree
of
deformity
N
=
SA
SA
′
(
1
)
2
≤
N
≤
6
(
2
)
Degree
of
distortion
S
=
(
D
5
0
/
D
2
)
(
D
9
8
/
D
5
0
)
(
3
)
0.5
≤
S
≤
0
.
8
0
(
4
)
To provide compositions and methods of polishing molybdenum surfaces that have a high removal rate and low static etch rate for molybdenum. Provided is a polishing composition, comprising: an abrasive, an oxidizer containing halogen oxoacids or salts thereof, a first inhibitor comprising a diamine, and a second inhibitor comprising a triamine.
There is provided a means capable of sufficiently removing organic residues present on the surface of an object to be polished after polishing containing silicon nitride or polysilicon. A surface treatment composition containing: a polymer having a constituent unit represented by Formula (1) in [Chem. 1] below; at least one of an anionic surfactant and a nonionic surfactant; and water, in which the surface treatment composition is used for treating the surface of an object to be polished after polishing,
There is provided a means capable of sufficiently removing organic residues present on the surface of an object to be polished after polishing containing silicon nitride or polysilicon. A surface treatment composition containing: a polymer having a constituent unit represented by Formula (1) in [Chem. 1] below; at least one of an anionic surfactant and a nonionic surfactant; and water, in which the surface treatment composition is used for treating the surface of an object to be polished after polishing,
in which, in Formula (1) above, R1 is a hydrocarbon group having the number of carbon atoms of 1 to 5, and R2 is a hydrogen atom or a hydrocarbon group having the number of carbon atoms of 1 to 3.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing molybdenum surfaces.
In particular, the CMP composition includes abrasive grains, a molybdenum (Mo) removal rate enhancer, a TEOS removal rate enhancer, an oxidizer, and water, combined in specified amounts to provide a composition with advantageous properties such as high Mo and TEOS removal rates while maintaining high Mo (RR) removal rate:Mo (ER) etching rate selectivity.
The present invention is to provide a means for improving a polishing removal rate of an object to be polished. There is provided a polishing composition containing: abrasive grains; a dispersing medium; and a water-soluble polymer, in which the abrasive grains are silica particles having an average particle size (d50) of more than 1.0 μm and a circularity of primary particles of 0.90 or more, and a dispersion degree D of the abrasive grains is 2.0 or less.
[Problem] To provide a production method of a columnar zinc oxide capable of obtaining a columnar zinc oxide at a high content proportion.
[Problem] To provide a production method of a columnar zinc oxide capable of obtaining a columnar zinc oxide at a high content proportion.
[Means for solution] A production method of a columnar zinc oxide, including a step of preparing a plate-shaped zinc compound in which an electrical conductivity of a supernatant liquid is 0.5 mS/cm or less, and a step of heating a dispersion liquid containing the plate-shaped zinc compound and a dispersing medium to 50° C. or higher, in which the heating is performed so that a weight change rate of the dispersion liquid before and after heating is 2% or less.
Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for tantalum, cobalt, and copper.
Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for tantalum, cobalt, and copper.
Polishing compositions comprising small (about 12 nm) anionically-modified abrasive particles, a metal corrosion inhibitor, and a phosphate surfactant are capable of achieving Ta to Co selectivities of greater than 10 and Cu to Co selectivities of approximately 1.
Provided is a polishing composition that can offer a high-grade surface. The polishing composition contains silica particles (A), a basic compound (B), a first water-soluble polymer (C1), a second water-soluble polymer (C2), and water (D), wherein the first water-soluble polymer (C1) is a polyvinyl alcohol-based polymer. A product (ER×ζ) of an etching rate ER [nm/h] of the polishing composition and zeta potential ζ [mV] of the polishing composition is −900 pmV/h or more and −90 pm V/h or less.
Provided is a polishing composition capable of realizing high polishing removal rate on an object to be polished. The polishing composition provided by this invention is used for polishing an object to be polished. The polishing composition includes water, sodium permanganate as an oxidant, and a transition metal salt different from the oxidant. The polishing composition includes the oxidant in an amount of more than 10 wt %. In some preferable embodiments, the transition metal salt is an oxo-transition metal salt, or a multi-nuclear transition metal complex including a transition metal and one or both of oxygen and hydrogen. The polishing composition can be preferably used in polishing an object formed of a high-harness material having a Vickers hardness of 1500 Hv or higher.
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
36.
DISPERSION FOR FORMING CERAMIC SINTERED BODY, GREEN SHEET FOR FORMING CERAMIC SINTERED BODY, PREPREG MATERIAL FORMING CERAMIC SINTERED BODY, AND CERAMIC SINTERED BODY
The present invention provides means for preventing the occurrence of bleeding-out of some components during the formation of a ceramic sintered body in a dispersion for forming a ceramic sintered body containing ceramic particles, a resin, and a plasticizer. The present disclosure relates to a dispersion for forming a ceramic sintered body, containing components (A) to (D) below and having a pH at 25° C. of 4.0 or more:
a component (A): ceramic particles,
a component (B): a resin,
a component (C): a plasticizer, and
a component (D): water.
The present invention relates to a polishing composition containing abrasive grains and a dispersing medium, in which a pH is less than 5.0, the abrasive grains are surface-modified silica particles in which an organic acid is immobilized on a surface thereof, a surface coverage of silanol groups present on the surface of the surface-modified silica particles is more than 0% and 6.0% or less, and an average primary particle diameter of the abrasive grains is 20 nm or more and 100 nm or less. According to the present invention, there is provided a means capable of improving a polishing removal rate of a silicon oxide film and polishing a silicon oxide film and a silicon nitride film at the substantially same rate.
[Problem] To provide polishing compositions and methods that can enable control over the SiN removal rate.
[Problem] To provide polishing compositions and methods that can enable control over the SiN removal rate.
[Solution] Polishing compositions comprising an abrasive comprising cationic particles; a SiN polishing rate suppressor; and water, wherein the composition has a pH of less than 5, are capable of reducing the polishing rate of SiN to a second material X (e.g., spin-on carbon). Polishing compositions comprising an abrasive comprising cationic particles; a SiN polishing rate enhancer; and water, wherein the composition has a pH of less than or equal to 5, are capable of increasing the polishing rate of SiN to a second material X (e.g., spin-on carbon).
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
39.
SURFACE TREATMENT METHOD, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE INCLUDING THE SURFACE TREATMENT METHOD, COMPOSITION FOR SURFACE TREATMENT, AND SYSTEM FOR PRODUCING SEMICONDUCTOR SUBSTRATE INCLUDING THE COMPOSITION FOR SURFACE TREATMENT
The present invention provides a means capable of sufficiently removing a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon nitride. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon nitride using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having a negatively charged functional group and having a viscosity of an aqueous solution having a concentration of 20% by mass at 25° C. of 10 mPa·s or more and a dispersing medium, and the surface treatment method includes controlling a zeta potential of the silicon nitride and a zeta potential of the inorganic oxide abrasive grains each to −30 mV or less using the composition for surface treatment.
[Problem] To provide a polishing composition having excellent processing power. [Solution] Provided is: a polishing composition containing abrasive grains, a polyoxyethylene alkyl ether, a hydrophobic dispersion medium, and water, wherein the polyoxyethylene alkyl ether has a C8-12 alkyl group, the polyoxyethylene alkyl ether is contained in an amount of 2.0 mol% or more when the hydrophobic dispersion medium content in terms of moles is 100 mol%; or a polishing composition containing abrasive grains, a flocculant, water, and a hydrophobic dispersion medium, the abrasive grains being such that the ratio (Dns50/Dws50) of the average secondary particle diameter Dns50 which is measured without performing a dispersion treatment using ultrasonic waves to the average secondary particle diameter Dws50 after a dispersion treatment using ultrasonic waves has been performed at an ultrasonic frequency of 28 kHz for 1 minute is 5-50.
Provided is a means capable of reducing impurities in titanium phosphate powder. This method for producing titanium phosphate powder comprises bringing a crude titanium sulfate solution and activated carbon into contact, filtering the product with a filter, and mixing the resulting titanium sulfate solution with a phosphoric acid solution to prepare a mixed solution.
A polishing composition having excellent bump cancellation ability at a periphery of an HLM and being able to improve a polishing removal rate is provided. This polishing composition contains an abrasive, a basic compound, and water. The polishing composition contains a globular abrasive as the abrasive and further contains an alkali metal salt.
REREE is a maximum light intensity at light receiving angles in a range of -42° to -40.5° at the time when the normal line to the surface coated with the SPF booster is taken as 0° and when the surface is irradiated with total light from an incidence angle of -45°. The SPF booster is a powder of crystalline titanium phosphate having a primary particle diameter D50 of 0.1-10 μm, the D50 being a particle diameter in a volume-based cumulative particle diameter distribution of the primary particles at which the cumulative frequency from the small-particle-diameter side is 50%.
An object of the present invention is to provide a novel polishing composition capable of reducing remaining of an object to be polished, which has to be polished, such as polysilicon, and suppressing recesses. There is provided a polishing composition containing colloidal silica, an alkali metal salt, and water, a pH of the polishing composition being 9.0 to 11.5, wherein (i) in an object to be polished including a first layer provided with a recess portion and a second layer formed to fill the inside of the recess portion, the polishing composition is used for a step of polishing the second layer to expose the first layer, the first layer is selected from a layer having an oxygen-silicon bond and a layer having a nitrogen-silicon bond, and the second layer has a silicon-silicon bond, and/or (ii) the number of silanol groups in the colloidal silica is 6/nm2 or more and 22/nm2 or less.
The present invention provides a mechanism capable of reducing a polishing removal rate of polysilicon and further reducing defects (organic residues, for example) on a surface of polysilicon after polishing.
The present invention provides a mechanism capable of reducing a polishing removal rate of polysilicon and further reducing defects (organic residues, for example) on a surface of polysilicon after polishing.
The present invention is a polishing composition containing: abrasive grains; a removal rate inhibitor that reduces a polishing removal rate of polysilicon; and a defect reducing agent that reduces defects on a surface of polysilicon, wherein the removal rate inhibitor is a water-soluble polymer having a polyoxyalkylene chain, which has a number average molecular weight of 200 or more and 600 or less, and in which a content of a component with a molecular weight of 700 or more is more than 0% by mass and less than 1% by mass.
There is provided a polishing composition capable of improving a polishing removal rate of a certain film type and suppressing a polishing removal rate of another certain film type, that is, capable of controlling a so-called polishing selection ratio, in an object to be polished containing two or more different film types. The present invention relates to a polishing composition containing abrasive grains, an acid, a polishing inhibitor, and an oxidizing agent, in which the abrasive grains have a positive zeta potential, the acid is an organic acid, the polishing inhibitor contains a nonionic surfactant, the oxidizing agent is hydrogen peroxide, and a pH of the polishing composition is 2 or more and 4 or less.
The present invention provides a polishing composition that contains a cellulose derivative, the polishing composition being capable of maintaining low haze and having exceptional defect reduction properties. Provided is a polishing composition that contains a cellulose derivative and a basic compound. The weight-average molecular weight (Mw) of the cellulose derivative is less than 80,000.
Provided is a polishing composition which is used for polishing surfaces made of a silicon material and which can yield polished surfaces having excellent wettability and a reduced number of defects. The polishing composition is used for polishing surfaces made of a silicon material. The polishing composition comprises abrasive grains, a basic compound, a random copolymer comprising a vinyl alcohol unit and an N-vinylpyrrolidone unit, and a nonionic surfactant. The nonionic surfactant has a molecular weight of less than 3,000. The content α [wt%] of the nonionic surfactant is in the range of 0.00035<α<0.00500.
An object of the present invention is to provide a means capable of sufficiently removing residues remaining on the surface of a polished object to be polished containing a silicon-containing material.
An object of the present invention is to provide a means capable of sufficiently removing residues remaining on the surface of a polished object to be polished containing a silicon-containing material.
The present invention is a post-chemical mechanical polishing cleaning composition containing a nitrogen-containing nonionic polymer and an anionic polymer containing a sulfonic acid group, in which the content of the nitrogen-containing nonionic polymer is more than 0.1% by mass and less than 1.0% by mass with respect to the entire post-chemical mechanical polishing cleaning composition, and the pH is less than 7.0.
An object of the present invention is to provide a powder material for additive manufacturing capable of forming an additive-manufactured product having more excellent mechanical strength. The present invention provides a powder material for additive manufacturing containing a carbide ceramic and a metal, in which a content of the metal is 8 to 43 volume % with respect to a total amount of the carbide ceramic and the metal, and in an XRD spectrum of an additive manufactured product obtained by additive manufacturing including laser light irradiation, peaks other than those derived from the powder material before the laser light irradiation are not included; or a solid solubility of the carbide ceramic in the metal at 1250° C. is 8 mass % or less.
This invention provides a means that is capable of improving the surface quality of a polished object after polishing. This invention is a polishing composition used for polishing a surface made up of a silicon material, the polishing composition containing abrasive grains, a basic compound, a polyvinyl alcohol-based polymer, and polyhydric alcohol having a molecular weight of 600 or less.
The present disclosure provides a means that can provide a prepreg having a fine and dense matrix structure by improving the impregnability of the matrix between nonwoven fabric fibers. The present disclosure relates to a method for producing a unidirectional ceramic fiber prepreg, the method comprising: a step for preparing a plurality of unidirectionally oriented ceramic fibers and a ceramic particle-containing composition; a step for obtaining a coating film by coating the ceramic particle-containing composition on a support; a step for obtaining a ceramic particle-containing composition impregnated body by immersing the plurality of unidirectionally oriented ceramic fibers in the coating film; and a step for peeling the support, after the ceramic particle-containing composition impregnated body has been dried, to obtain a unidirectional ceramic fiber prepreg.
C04B 35/80 - Fibres, filaments, whiskers, platelets, or the like
B28B 1/52 - Producing shaped articles from the material specially adapted for producing articles from mixtures containing fibres
B29B 11/16 - Making preforms characterised by structure or composition comprising fillers or reinforcements
B29C 70/20 - Fibrous reinforcements only characterised by the structure of fibrous reinforcements using fibres of substantial or continuous length oriented in a single direction, e.g. roving or other parallel fibres
C08J 5/04 - Reinforcing macromolecular compounds with loose or coherent fibrous material
D06M 11/45 - Oxides or hydroxides of elements of Groups 3 or 13 of the Periodic TableAluminates
D06M 11/74 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with carbon or compounds thereof with carbon or graphiteTreating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with carbon or compounds thereof with carbidesTreating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with carbon or compounds thereof with graphitic acids or their salts
[Problem] The present invention addresses the problem of providing a polishing composition which is capable of further improving the polishing speed of an object to be polished such as silicon carbide, and is capable of maintaining the properties of the polishing composition even if stored at relatively high temperatures. [Solution] The present invention provides a polishing composition which contains an oxidizing agent, a zirconium (IV) salt that serves as a metal salt, and an aqueous medium.
The present invention provides a polishing composition that is for polishing a surface that comprises a silicon material, the polishing composition giving the surface excellent wettability after polishing and making it possible to reduce defects. Provided is a polishing composition for polishing a surface that comprises a silicon material. The polishing composition contains abrasive grains (A), a basic compound (B), a first water-soluble polymer (C1), and a second water-soluble polymer (C2) that has a different chemical structure from the first water-soluble polymer (C1). The first water-soluble polymer (C1) is a random copolymer that includes a vinyl alcohol unit and an N-vinylpyrrolidone unit.
Provided is a mechanism capable of further reducing the number of residues remaining on a surface of a polished object to be polished after CMP. A post-chemical mechanical polishing cleaning composition containing the following components (A) and (B), and having a pH of more than 7.0 and 10.0 or less is provided:
Component (A): a nonionic polymer
Component (B): at least one compound selected from the group consisting of a compound having an amino group and a hydroxyl group, a compound represented by formula (1): H2N[(CH2)xNR1]yR2, and hexamethylenetetramine.
Polishing compositions and methods are provided which enable barrier polishing with tunable removal rate ratios for copper, tantalum, and TEOS. Polishing compositions comprising silica particles (greater than 12 nm), a metal corrosion inhibitor, and a phosphate surfactant are capable of achieving Ta to TEOS selectivities of greater than 1 and low Co removal rates (e.g., less than 200 Å/min), allowing for good topography correction (e.g., reduced dishing).
MITSUBISHI HEAVY INDUSTRIES AERO ENGINES, LTD. (Japan)
FUJIMI INCORPORATED (Japan)
TOCALO CO., LTD. (Japan)
Inventor
Kinouchi, Arata
Masuda, Takaya
Habu, Yoichiro
Takagi, Kaito
Noda, Kazuo
Abstract
A method for applying a thermal barrier coating according to an embodiment, includes: a step of forming a top coat layer on a bond coat layer formed on a heat-resistant alloy base material of an object. The step of forming the top coat layer includes forming the top coat layer by thermal-spraying a suspension, which contains ceramic powder, with atmospheric pressure plasma spraying, while cooling a portion of a plasma flame by supplying water as a cooling fluid to a periphery of the plasma flame at a supply rate of not less than 25 ml/min and not greater than 100 ml/min.
The present invention provides: a silicon carbide powder which is unlikely to cause thickening even when added to a different material that is liquid, such as a liquid resin or molten metal; and a production method for the same. Provided is a silicon carbide powder comprising primary particles of silicon carbide for which the crystal system is α-type, wherein at least one element selected from aluminum, yttrium, and ytterbium is contained on the surfaces of the primary particles of silicon carbide, and the Hausner ratio of the silicon carbide powder is not more than 2.1.
C04B 35/565 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides based on silicon carbide
59.
POLISHING COMPOSITION AND SURFACE TREATMENT METHOD
Means for effectively removing hafnium oxide can be provided. A polishing composition contains (a) an anionic abrasive, (b) a nitrogen-containing additive, and (c) a dispersing medium, wherein the pH of the polishing composition is 2 or more and less than 5, and the (b) nitrogen-containing additive contains at least one selected from the group consisting of the following (i), the following (ii), and the following (iii); (i) a compound selected from the group consisting of a guanidine compound having a specific structure, an amidine compound having a specific structure, and salts thereof; (ii) a cyclic amino acid; and (iii) a sulfonic acid compound having an amino group.
The present disclosure relates to chemical mechanical polishing (CMP) compositions comprising a first and second molybdenum static etching rate suppressor, an anionic silica abrasive, and an oxidizer.
The present disclosure relates to chemical mechanical polishing (CMP) compositions comprising a first and second molybdenum static etching rate suppressor, an anionic silica abrasive, and an oxidizer.
The first molybdenum static etching rate suppressor is a phosphate-containing polyethylene surfactant or a sulfate-containing polyethylene surfactant, and the second molybdenum static etching rate suppressor is a basic amino acid, and this combination provides advantageous properties such as high molybdenum removal rate while also exhibiting a low molybdenum static etching rate, thus providing compositions well suited for polishing a molybdenum surface.
The present disclosure relates to a polishing compositions that increase a silicon oxide removal rate without impairing the stability of an abrasive. The present disclosure relates to a polishing composition comprising an abrasive, a base compound, a silicon oxide removal rate controller, and an oxidizer, wherein the abrasive is a silica abrasive with a primary particle size ranging from about 30 nm to about 70 nm and a secondary particle size ranging from about 50 nm to about 130 nm; the base compound is an inorganic base; the silicon oxide removal rate controller is a zwitterion; and the oxidizer is a peroxide.
The present invention provides a polishing composition which exhibits an improved polishing rate with respect to a non-altered surface, while maintaining or improving the polishing rate with respect to an altered surface. A polishing composition disclosed herein contains abrasive grains and a basic compound A. With respect to the basic compound A, the sum of the atomic weights of atoms constituting the cation or conjugate acid of the basic compound A is 40 or more, and the cation or conjugate acid of the basic compound A does not contain a carbon atom.
The present technology generally relates to compositions and methods for polishing surfaces comprising a metal and a dielectric film material. Embodiments include methods for polishing a surface comprising W, TEOS/SiO2 and SiN, comprising applying a polishing slurry comprising an abrasive, a SiN polishing rate enhancer, and an anionic surfactant, and methods of buffering a metal oxide salt in a CMP slurry to obtain an increased robustness against TEOS removal comprising polishing a surface comprising a metal and TEOS by applying a polishing slurry comprising an anionic modified colloidal silica abrasive and an anionic surfactant.
Provided is a polishing composition that allows carbon-added silicon oxide (SiOC) to be polished at a higher polishing speed than the polishing speed of silicon nitride (i.e., the selection ratio of SiOC/silicon nitride is high).
Provided is a polishing composition that allows carbon-added silicon oxide (SiOC) to be polished at a higher polishing speed than the polishing speed of silicon nitride (i.e., the selection ratio of SiOC/silicon nitride is high).
A polishing composition containing spinous silica particles and a dispersing medium, in which the pH is less than 5.
Provided is a polishing composition that can improve the surface quality of a surface to be polished after polishing while achieving an excellent polishing removal rate for an object to be polished. The polishing composition to be provided contains sodium permanganate as an oxidant. The polishing composition contains or does not contain an abrasive A with a Mohs hardness of less than 8 is contained as an abrasive. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
A polishing composition that can achieve an excellent polishing removal rate for an object to be polished is provided. The polishing composition used for polishing the object to be polished is provided. The polishing composition contains water, and sodium permanganate as an oxidant. In some preferred embodiments, the polishing composition further contains a metal salt selected from salts each of which has a cation containing a metal belonging to Groups 3 to 16 in the periodic table, and an anion. The polishing composition can also be preferably used to polish an object to be polished formed of a high hardness material having a Vickers hardness of 1500 Hv or more.
The present invention provides a means for adjusting the polishing removal rate of a metal material relative to the polishing removal rate of a resin material, while maintaining the polishing removal rates high, in polishing of a polishing object that contains the resin material and the metal material. The present disclosure relates to a polishing composition which is used for polishing of a polishing object that contains a resin material and a metal material, and which contains abrasive grains, a first amine compound that has 0 or one amino group, a second amine compound that has two or more amino groups, and a dispersion medium.
There is provided a sliding apparatus having low frictional resistance with a snow surface or an ice surface and excellent sliding properties. A sliding apparatus for sliding on a sliding object (snow surface or ice surface) has a sliding surface (1) contacting the sliding object. The sliding surface (1) is divided into a plurality of regions (1A, 1B, 1C) different in the surface arithmetic mean roughness Ra, and the plurality of regions (1A, 1B, 1C) is arranged in order along the longitudinal direction. Among the plurality of regions (1A, 1B, 1C), the surface arithmetic mean roughness Ra of a front region (1A) which is a region first contacting the sliding object in sliding is smaller than the surface arithmetic mean roughness Ra of the rear region (1B) positioned rearward in the sliding direction with respect to the front region (1A).
A63C 5/12 - Making thereofSelection of particular materials
B24B 29/02 - Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
69.
POLISHING COMPOSITION, POLISHING COMPOSITION PRODUCTION METHOD, POLISHING METHOD, AND SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD
There are provided a polishing composition capable of increasing the polishing removal rate of silicon nitride, a polishing composition production method, a polishing method, and a semiconductor substrate production method. The polishing composition contains abrasives having a zeta potential of −5 mV or less and a cationic surfactant.
There are provided a polishing composition less likely to leave cloudiness on the surface of an object to be polished even when there is a time interval before wiping-off, a method for producing the same, and a polishing method.
There are provided a polishing composition less likely to leave cloudiness on the surface of an object to be polished even when there is a time interval before wiping-off, a method for producing the same, and a polishing method.
A polishing composition contains abrasives, a hydrophobic dispersion medium, water, and a surfactant. The surfactant contains polyoxyethylene alkyl ether represented by Formula (i) RO—(C2H4O)n—H. In Formula (i), R is a branched-chain alkyl group having a number of carbon atoms of 12 or more and 20 or less, and n represents the average number of added moles of oxyethylene and is 3 or more and 50 or less.
105050 at which the cumulative particle volume from the smallest particle size accounts for 50% of the total particle volume is at most 40 μm. At 1 atm, the difference between the highest value and the lowest value of the boiling points of the plurality of metal oxides is at least 500°C. By using said powder for thermal spraying, the ratio of phase separation can be reduced while denseness is enhanced and surface roughness is reduced in a thermal-sprayed coating.
Provided are a high-performance polishing composition, a method for producing same, and a polishing method. The polishing composition contains abrasive particles, water, and a hydrophobic dispersion medium. In the particle size distribution of the abrasive particles, when the cumulative volume of the abrasive particles from the large particle size side in the cumulative particle size distribution on a volume basis becomes 10%, 50%, and 90%, respectively, are defined as D10, D50, and D90, respectively, the particle size distribution width (D10-D90)/D50 of the abrasive particles is 0.4 to 2.0, and the specific surface area (m2/g) of the abrasive particles is 12 to 20.
5050) of greater than 1.0 µm and a primary particle roundness of at least 0.90. The anti-caking agent is inorganic particles different from the abrasive grains, and the product of the zeta potential of the abrasive grains and the zeta potential of the anti-caking agent is positive.
The present invention provides a method for producing a polishing composition in which it is easy to confirm the degree of dissolution of a chelating agent during the production process. Provided is a method for producing a polishing composition for polishing a surface formed of a silicon material. The method for producing a polishing composition comprises: preparing a basic chelating agent-containing liquid that contains a basic compound, water, and a chelating agent; and mixing the chelating agent-containing liquid and a silica dispersion liquid that contains silica particles and water.
The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing.
The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing.
The present invention is a polishing composition containing abrasive grains and an alkylamine compound having at least one linear or branched alkyl group having 2 or more and 15 or less carbon atoms, in which a pH is less than 7, and a zeta potential of the abrasive grains in the polishing composition is negative.
Provided is a means for allowing residues remaining on the surface of a polished object to be further reduced. Provided is a composition for surface treatment containing components (A) to (C) below and having pH of more than 7.0: the component (A): a piperazine-based compound represented by a formula (a) below and having two or more amino groups having pKa larger than the pH of the composition for surface treatment, the component (B): an anionic polymer, and the component (C): a buffer represented by a formula: A-COO—NH4+ (A is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).
Provided is a means for allowing residues remaining on the surface of a polished object to be further reduced. Provided is a composition for surface treatment containing components (A) to (C) below and having pH of more than 7.0: the component (A): a piperazine-based compound represented by a formula (a) below and having two or more amino groups having pKa larger than the pH of the composition for surface treatment, the component (B): an anionic polymer, and the component (C): a buffer represented by a formula: A-COO—NH4+ (A is an alkyl group having 1 or more and 10 or less carbon atoms or a phenyl group).
The present invention provides a means that is capable of sufficiently removing residues present on the surface of a polished silicon carbide substrate. The present invention pertains to a method for polishing and washing a silicon carbide substrate, the method comprising: a step for supplying a polishing composition to the silicon carbide substrate and polishing the same; and a step for washing the polished silicon carbide substrate using a washing agent. The washing agent contains a chelating agent, a surfactant, and a solvent. The solvent consists only of water.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B23Q 11/00 - Accessories fitted to machine tools for keeping tools or parts of the machine in good working condition or for cooling workSafety devices specially combined with or arranged in, or specially adapted for use in connection with, machine tools
B24B 37/00 - Lapping machines or devicesAccessories
C04B 35/505 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare earth compounds based on yttrium oxide
Provided is a polishing composition with which surface roughness after polishing can be improved. Also provided is a polishing composition used for polishing a surface composed of a silicon material. This polishing composition comprises abrasive grains and a water-soluble polymer, wherein the abrasive grains includes organic particles. In some aspects, the organic particles may be one or more types of particles selected from among an acrylic resin, a styrene resin, a styrene-acrylic resin, a polyamide resin, a polyimide resin, an epoxy resin, a polyester resin, a polyurethane resin, a phenolic resin, a melamine resin, a benzoguanamine resin, a polyethersulfone resin, and a polytetrafluoroethylene resin.
The present invention provides a polishing composition capable of improving polishing removal speed. The polishing composition contains resin particles and an oxidizing agent, the oxidizing agent contains a composite metal oxide, and the concentration of organic particles is at least 0.01 wt%.
The present invention provides a polishing composition with which friction on a polishing target can be reduced while maintaining a satisfactory polishing speed. The polishing composition contains inorganic particles, an oxidizing agent, and resin particles, the oxidizing agent contains a composite metal oxide, and the ratio (Nrp/Nip) of the number (Nip) of inorganic particles and the number (Nrp) of resin particles is 80 or higher.
Provided are a high-performance polishing composition, a method for producing the same, and a polishing method. The polishing composition contains abrasive grains, water, and a hydrophobic dispersion medium. The value of a shape parameter K, obtained by dividing the specific surface area (m2/g) by the square of the particle diameter D50 (μm) of the abrasive grains, is from 0.6 to 60.
Provided is a technology that enhances the uniformity of components in a thermally sprayed film. The thermal spraying powder disclosed herein is thermal spraying powder for forming an electrode of a solid oxide fuel cell or a solid oxide electrolysis cell. This thermal spraying powder has a granule strength of at least 25 MPa.
The present invention provides a technique for improving the uniformity of components in a spray coating. The powder for thermal spraying disclosed herein is a powder for thermal spraying for forming an electrode of a solid oxide fuel cell or a solid oxide electrolytic cell. This powder for thermal spraying has a peak in a range of 0.15-1 µm inclusive in a log differential pore volume distribution having a pore diameter of 1 µm or less obtained by a mercury press-in method.
To provide a polishing composition that can polish silicon nitride film at a high polishing removal rate and suppress the polishing removal rate for polycrystalline silicon film.
To provide a polishing composition that can polish silicon nitride film at a high polishing removal rate and suppress the polishing removal rate for polycrystalline silicon film.
A polishing composition containing abrasive grains having a negative zeta potential in the polishing composition, and a polyalkylene oxide compound represented by formula (1); and having a pH of less than 7.
Provided is a polishing composition with which it is possible to achieve high HLM rim protrusion resolving ability. Provided is a polishing composition containing abrasive grains, a basic compound, a water-soluble macromolecule A, a water-soluble macromolecule B, and water. The water-soluble macromolecule A is a polymer having a unit structure that is expressed by general formula (1) (In the formula, R1is a hydrocarbon group having 5 or fewer carbon atoms, and R2 is a hydrogen atom or a hydrocarbon group having 3 or fewer carbon atoms.), and the water-soluble macromolecule B is a polymer having no cellulose structure in the molecule.
Provided is a polishing composition with which it is possible to achieve high HLM rim protrusion resolving ability while suppressing the occurrence of defects and residue. Provided is a polishing composition containing abrasive grains, a basic compound, a water-soluble macromolecule, and water. In the abrasive grains, the average secondary particle diameter D2 measured by a dynamic light scattering method is larger than 60 nm. The polishing composition contains, as the water-soluble macromolecule, a water-soluble macromolecule a that is a polymer a having a constituent unit that is expressed by general formula (1) (In the formula, R1is a hydrocarbon group having 5 or fewer carbon atoms, and R2 is a hydrogen atom or a hydrocarbon group having 3 or fewer carbon atoms.).
The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate.
The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate.
The present invention is a polishing composition containing abrasive grains and a quaternary phosphonium salt, in which a pH is less than 7.0, and a zeta potential of the abrasive grains in the polishing composition is −10 mV or less.
The present invention provides a polishing composition with which it is possible to improve the post-polishing surface quality of an object to be polished. The present disclosure relates to a polishing composition containing: (A) abrasive grains; (B) a compound α having a polyethylene oxide structure and a polypropylene oxide structure; (C) a water-soluble polymer different from the compound α; (D) a basic compound; and (E) a dispersion medium. (B) The compound α is contained at 0.0001 mass% or more with respect to the total mass of the polishing composition, and the ratio [{(B) + (C)}/(A)] of the total mass of (B) the compound α and (C) the water-soluble polymer to the mass of (A) the abrasive grains is 0.058 or more and less than 0.150.
The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing silicon oxynitride (SiON) surfaces. In particular, the CMP composition includes an abrasive, an additive, and water, combined in specified amounts to provide a composition with advantageous properties such as high SiON removal rates even upon dilution of the composition with a diluent.
Molybdenum polishing compositions and methods according to the present disclosure include abrasive particles, a first and a second oxidizers, and a first and a second molybdenum static etch rate suppressors, wherein the pH of the polishing composition is from 4 to 9. Compositions according to the present disclosure are effective to efficiently polish molybdenum at a high removal rate, which achieving a low molybdenum static etch rate, thereby obtaining a high Mo RR/SER ratio. Compositions and methods according to the present disclosure thus result in improved molybdenum polishing processes and higher-quality molybdenum surfaces than are achieved by conventional polishing compositions.
The present invention provides a polishing composition with which it is possible to improve the surface flatness and the ability to eliminate a bump at the periphery of an HLM, while maintaining a polishing rate. Provided is a polishing composition for polishing a silicon wafer. The polishing composition contains: silica particles that serve as abrasive grains; a compound A; a basic compound; and a water-soluble polymer. The compound A has an aliphatic hydrocarbon group a having 11 or less carbon atoms, and an ionic functional group b.
A silica sol which does not gelate, has a high purity, and contains a high concentration of silica particles is provided. A silica sol containing silica particles and water, wherein a product of an average primary particle size of the silica particles and an average circularity of the silica particles is 15.0 or more and 31.2 or less, a concentration of the silica particles is 20 mass % or more, a total organic carbon amount per silica particle is less than 10 mass ppm, when the concentration of the silica particles is 20 mass %, a viscosity at 25° C. is 300 mPa·s or less, and a concentration of a metal impurity is less than 1 mass ppm.
The present invention provides a method capable of increasing a ratio (selection ratio) of a polishing removal rate of silicon oxide or silicon nitride to a polishing removal rate of polysilicon and further reducing residues (preferably organic residues) on a surface of a polished object to be polished. The present invention is a polishing composition containing colloidal silica, an inorganic salt containing no halogen, and a water-soluble polymer, in which a product of a valence number (unit: valency) of an anion of the inorganic salt and a concentration (unit: mM) of the anion in the polishing composition is 57 or more.
The present invention provides a polishing composition which is capable of rapidly removing scratches and exhibits a high polishing rate without deteriorating surface quality. One aspect of the present invention relates to the polishing composition contains abrasive grains having a Mohs hardness of 8 or more, and a dispersing medium, wherein the abrasive grains have two or more local maximum points at different particle sizes in a volume-based particle size distribution measured by a porous electrical resistance method.
There is provided a method for producing a resin member used in a production process of electronic devices capable of suppressing the adhesion of adhering substances to the surface over a long period of term. The method for producing a resin member used in a production process of electronic devices includes: a processing step of applying abrasive processing to the surface of a raw member to set a surface roughness Ra to 100 nm or less and a contact angle of pure water with respect to the surface to 70° or more and less than 110°.
B24B 55/00 - Safety devices for grinding or polishing machinesAccessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
Provided is a polishing pad having a high following performance even when a surface to be polished is a curved face. A polishing pad (1) in an embodiment of the present invention includes a polishing layer (2) having a polishing face (21) and a support layer (3) that is formed from a material softer than the polishing layer (2) and is fixed to a face (22) opposite to the polishing face (21) of the polishing layer (2). The support layer (3) has a hardness of not less than 30 and less than 70 in terms of F hardness.
B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 37/26 - Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
98.
POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate.
An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate.
The present invention provides a polishing composition including abrasive grains and an acidic compound. The abrasive grains are inorganic particles having an organic acid immobilized on a surface thereof. In a particle size distribution of the abrasive grains measured by a dynamic light scattering method, D90/D10 is 2.2 or more and D50 is 70 nm or more, where D10 is a particle diameter when a cumulative particle mass from a fine particle side reaches 10% of the total particle mass, D50 is a particle diameter when the cumulative particle mass from the fine particle side reaches 50% of the total particle mass, and D90 is a particle diameter when the cumulative particle mass from the fine particle side reaches 90% of the total particle mass.
A method for manufacturing a silica sol according to an embodiment of the present invention includes: a step of preparing a silica sol reaction liquid by hydrolyzing and polycondensing an alkoxysilane or a condensate thereof using an alkali catalyst in a solvent; and at least one of a step of concentrating the silica sol reaction liquid by an ultrasonic atomization separation method and a step of replacing the silica sol reaction liquid with water by the ultrasonic atomization separation method.
