Processes for the inherently selective formation of silicon-containing films on various substrates are disclosed, which involve the use of precursors containing at least one oxygen atom and at least one silicon-nitrogen bond, and a non-oxidizing plasma.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
2.
HIGH PURITY POLYSILOXANE MACROMERS AND METHOD FOR MAKING THE SAME
A method of synthesizing a high purity acryloxyalkyldimethylchlorosilane involves (a) reacting an acrylate salt with a haloalkyldimethylalkoxysilane to form an acryloxy-substituted alkyldimethylalkoxysilane; and (b) displacing the alkoxy group in the acryloxy-substituted alkyldimethylalkoxysilane using a chloride-containing compound to form the acryloxyalkyldimethylchlorosilane. The acryloxyalkyldimethylchlorosilane, which may be used as an end-capper for AROP, has a purity of greater than about 99% and contains no detectable isomeric or hydrogenated impurities.
C08G 77/24 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen halogen-containing groups
3.
SILOXANE COMPOSITION FOR LOWER TEMPERATURE ADHESION
Organosiloxane compositions that cure by a catalyzed hydrosilylation reaction are provided. These curable organosiloxane compositions exhibit excellent adhesion at lower temperature cure to a variety of substrates which the compositions are in contact with during curing.
Organosiloxane compositions that cure by a catalyzed hydrosilylation reaction are provided. These curable organosiloxane compositions exhibit excellent adhesion at lower temperature cure to a variety of substrates which the compositions are in contact with during curing.
Thin glass-like ceramic films which possess organic or physically functional structures with thicknesses in the 15 to 500 nm range and bottom-up methods for their fabrication are described. SiO2-rich structures having gradient properties are formed from a silsesquioxane having an electronegative β substituent and at least one organofunctional silane or at least one metal alkoxide.
C08G 77/18 - Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
C23C 18/14 - Decomposition by irradiation, e.g. photolysis, particle radiation
6.
HIGH PURITY TIN COMPOUNDS CONTAINING UNSATURATED SUBSTITUENT AND METHOD FOR PREPARATION THEREOF
Monoorgano tin trialkoxide compounds having chemical formula R′Sn(OR)3 and containing less than about 5 mol % tin tetraalkoxide are described. R′ is a linear or branched, unsaturated hydrocarbon group having about 2 to about 4 carbon atoms and each R is independently trimethylsilyl, phenyl, or a linear or branched, optionally fluorinated, alkyl group having about 1 to about 5 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.
Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.
A61K 8/892 - Polysiloxanes saturated, e.g. dimethicone, phenyl trimethicone, C24-C28 methicone or stearyl dimethicone modified by a hydroxy group, e.g. dimethiconol
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
A61Q 5/06 - Preparations for styling the hair, e.g. by temporary shaping or colouring
8.
BONDING STRUCTURE, AND CONTAINER, PIPE FOR TRANSFERRING HIGHLY PURE ORGANOTIN COMPOUND, AND HIGHLY PURE ORGANOTIN COMPOUND MANUFACTURING APPARATUS HAVING THE SAME
A bonding structure used for forming a sealed space (for example, a container) for containing or transferring an organotin compound, wherein the bonding structure is a structure in which a first member is connected with a second member via a gasket or an O-ring, and the gasket or the O-ring is formed with a fluororesin derived from monomers of at least tetrafluoroethylene and perfluoromethyl vinyl ether.
HIGH PURITY TIN COMPOUND, STORAGE METHOD AND PRODUCTION METHOD FOR SAME, AND TIN HYDROLYSIS PRODUCT, TIN HYDROLYSIS PRODUCT SOLUTION AND TIN HYDROLYSIS PRODUCT THIN FILM EACH USING SAME
23244 (In general formula (1) and general formula (2), R moiety represents a hydrocarbon group which has 1 to 30 carbon atoms and may be substituted by a halogen atom, an oxygen atom or a nitrogen atom, and R' moieties may be the same as or different from each other and each represent a hydrocarbon group which has 1 to 10 carbon atoms. Meanwhile, two R' moieties on the same nitrogen atom may combine with each other to form a three- to seven-membered ring containing the nitrogen atom.)
A bonding structure used for forming a sealed space (for example, a container) for containing or transferring an organotin compound, wherein the bonding structure is a structure in which a first metal member (for example, a lid of the container) is connected to a second metal member (for example, a container body of the container) via a metal gasket or a metal O-ring, and the metal gasket or the metal O-ring has a surface having a Vickers hardness set to be not less than lower than a Vickers hardness of a surface of a portion of the metal member, the portion being contacted with the metal gasket or the metal O-ring.
Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
12.
SILICON CARBIDE THIN FILMS AND VAPOR DEPOSITION METHODS THEREOF
A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
A method for purifying a tin compound, including: making an inert gas pass through in, or on a surface of, a liquid containing a tin compound represented by a chemical formula RSnX3, where R represents a hydrocarbon group having 1 to 30 carbon atoms optionally substituted with a halogen atom, and X represents a hydrolysable substituent, to perform stripping, before or after a distillation step of the tin compound.
A silicone gel forming composition containing an α-dimethylvinylsiloxy-ω-dimethylhydride terminal polydimethylsiloxane; an α-dimethylvinylsiloxy-ω-n-butyl terminal polydimethylsiloxane; and a hydrosilylation catalyst is provided. When cured, the gel has good adhesion to skin and presents no pain upon application to and removal from the skin.
A series of norbornene compounds having heterocyclic functionality are described, as well as methods for their preparation. Also described are rapid, low-temperature, low-(VOC)-methods for attaching these norbornene compounds to surfaces for use as chemical attachment points for a variety of functional molecules.
A silicone gel forming composition containing an a-dimethylvinylsiloxy-co-dimethylhydride terminal polydimethylsiloxane; an a-dimethylvinylsiloxy-oj-n-butyl terminal polydimethylsiloxane; and a hydrosilylation catalyst is provided. When cured, the gel has good adhesion to skin and presents no pain upon application to and removal from the skin.
A series of norbornene compounds having heterocyclic functionality are described, as well as methods for their preparation. Also described are rapid, low-temperature, low-(VOC)-methods for attaching these norbomene compounds to surfaces for use as chemical attachment points for a variety of functional molecules.
Monoorgano tin trialkoxide compounds having chemical formula R′Sn(OR)3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R′ is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.
Cyclic azastannanes and cyclic oxostannanes having formulas (I) and (II) where X is an alkoxy or dialkylamino group are a new class of cyclic compounds. These compounds have desirably high vapor pressure and high purity (containing low levels of polyalkyl contaminants after purification), and have particular interest for EUV photoresist applications. Methods for preparing these compounds are described.
Monoalkyl tin triamide compounds having purity of at least about 99 mol % and the chemical formula RSn(NMe2)3 are described. R1 is selected from RA, RB, and RC; RA is a primary alkyl group having about 1 to 10 carbon atoms, RB is a secondary alkyl group having about 3 to 10 carbon atoms, and RC is a tertiary alkyl group having about 3 to 10 carbon atoms; each R2 is independently an alkyl group having about 1 to 10 carbon atoms; and a content of R1Sn(NR22)2(N(R2)CH2NR22) is less than about 1 mol %. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyl tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of dialkyl tin and other tin impurities.
An excellent method of manufacturing a patterned substrate which is capable of easily patterning an insulation layer to provide a patterned substrate even when a difficult-to-etch material is used for the insulation layer, a patterned substrate obtained thereby, and a patterned substrate intermediate thereof are provided. The method of manufacturing a patterned substrate with the insulation layer and an electrode layer stacked in this order on a substrate comprising: forming an organic resist material layer; irradiating the organic resist material layer with radiation or an electromagnetic wave of a wavelength of 10 to 780 nm and developing the organic resist material layer to form a first patterning layer; and removing the first patterning layer.
3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R′ is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.
Monoorgano tin trialkoxide compounds having chemical formula R′Sn(OR)3 and containing less than about 5 mol % diorgano tin dialkoxide are described. R′ is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.
33 and containing less than about 5 mol% diorgano tin dialkoxide are described. R' is a linear or branched, optionally fluorinated, unsaturated hydrocarbon group having about 2 to about 20 carbon atoms and each R is independently a linear or branched, optionally fluorinated, alkyl group having about 1 to about 10 carbon atoms. Methods for synthesizing and purifying these compounds are also provided. The monoorgano tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of diorgano tin impurities.
Monoalkyl tin triamide compounds having purity of at least about 99 mol % and the chemical formula RSn(NMe2)3 are described. R1 is selected from RA, RB, and RC; RA is a primary alkyl group having about 1 to 10 carbon atoms, RB is a secondary alkyl group having about 3 to 10 carbon atoms, and RC is a tertiary alkyl group having about 3 to 10 carbon atoms; each R2 is independently an alkyl group having about 1 to 10 carbon atoms; and a content of R1Sn(NR22)2(N(R2)CH2NR22) is less than about 1 mol %. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyl tin compounds may be used for the formation of high-resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of dialkyl tin and other tin impurities.
233 are described. R1is selected from RA, RBand RC; RAis a primary alkyl group having about 1 to 10 carbon atoms, RBis a secondary alkyl group having about 3 to 10 carbon atoms, and RCis a tertiary alkyl group having about 3 to 10 carbon atoms; each R2is independently an alkyl group having about 1 to 10 carbon atoms; and a content of R1Sn(NR2222(N(R222NR222) is less than about 1 mol%. Methods for synthesizing, purifying, and storing these compounds are also provided. The monoalkyl tin compounds may be used for the formation of high -resolution EUV lithography patterning precursors and are attractive due to their high purity and minimal concentration of dialkyl tin and other tin impurities.
The disclosure relates to the inherently selective mixed oxide deposition of a dielectric film on non-metallic substrates without concomitant growth on metallic substrates using a sequence of exposure to metal alkyl, heteroatom silacyclic compound, and water. The resulting films show much higher growth rates than corresponding metal oxide and inherent selectivity towards non-metallic surfaces. Films as thick as 14 nm can be grown on dielectric substrates such as thermal oxide and silicon nitride without any growth observed on metallic films such as copper and without the use of an inhibitor. Such dielectric-on-dielectric (DoD) growth is a critical element of many proposed fabrication schemes for future semiconductor device fabrication such as fully self-aligned vias.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
The selective deposition of a metal oxide or dielectric layer on non-metallic substrates without concomitant growth on metallic substrates using cyclic azasilanes, cyclic thiasilanes, or cyclic tellurasilanes to inhibit growth on the metal surface is described. Films over seven nanometers thick can be grown on dielectric substrates, such as thermal silicon dioxide and silicon, without any growth observed on metallic areas such as copper. Such dielectric-on-dielectric (DoD) growth is a critical element of many proposed fabrication schemes for future semiconductor device fabrication such as fully self-aligned vias.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/02 - Pretreatment of the material to be coated
The disclosure relates to the inherently selective mixed oxide deposition of a dielectric film on non-metallic substrates without concomitant growth on metallic substrates using a sequence of exposure to metal alkyl, heteroatom silacyclic compound, and water. The resulting films show much higher growth rates than corresponding metal oxide and inherent selectivity towards non-metallic surfaces. Films as thick as 15 nm can be grown on dielectric substrates such as thermal oxide and silicon nitride without any growth observed on metallic films such as copper and without the use of an inhibitor. Such dielectric-on-dielectric (DoD) growth is a critical element of many proposed fabrication schemes for future semiconductor device fabrication such as fully self-aligned vias.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/32 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers using masks
30.
AREA SELECTIVE ATOMIC LAYER DEPOSITION OF METAL OXIDE OR DIELECTRIC LAYER ON PATTERNED SUBSTRATE
The selective deposition of a metal oxide or dielectric layer on non-metallic substrates without concomitant growth on metallic substrates using cyclic azasilanes, cyclic thiasilanes, or cyclic tellurasilanes to inhibit growth on the metal surface is described. Films over seven nanometers thick can be grown on dielectric substrates, such as thermal silicon dioxide and silicon, without any growth observed on metallic areas such as copper. Such dielectric-on-dielectric (DoD) growth is a critical element of many proposed fabrication schemes for future semiconductor device fabrication such as fully self-aligned vias.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
31.
N-ALKYL SUBSTITUTED CYCLIC AND OLIGOMERIC PERHYDRIDOSILAZANES, METHODS OF PREPARATION THEREOF, AND SILICON NITRIDE FILMS FORMED THEREFROM
Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.
Fluorinated alkyltin compounds having formula (I) and formula (IV) are described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2, R′ is a primary or secondary monofluoroalkyl group having about 2 to about 10 carbon atoms and R is a primary, secondary, or tertiary alkyl group having about 1 to about 4 carbon atoms.
Fluorinated alkyltin compounds having formula (I) and formula (IV) are described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2, R′ is a primary or secondary monofluoroalkyl group having about 2 to about 10 carbon atoms and R is a primary, secondary, or tertiary alkyl group having about 1 to about 4 carbon atoms.
(RfCH2)nSnX(4-n) (I)
Fluorinated alkyltin compounds having formula (I) and formula (IV) are described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2, R′ is a primary or secondary monofluoroalkyl group having about 2 to about 10 carbon atoms and R is a primary, secondary, or tertiary alkyl group having about 1 to about 4 carbon atoms.
(RfCH2)nSnX(4-n) (I)
R′Sn(NR2)3 (IV)
Fluorinated alkyltin compounds having formula (I) and formula (IV) are described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2, R′ is a primary or secondary monofluoroalkyl group having about 2 to about 10 carbon atoms and R is a primary, secondary, or tertiary alkyl group having about 1 to about 4 carbon atoms.
(RfCH2)nSnX(4-n) (I)
R′Sn(NR2)3 (IV)
A method for forming a fluorinated oxostannate film from the fluorinated alkyl tin compounds is also provided.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Two classes of cyclic tin compounds, trioxa-aza-1-stannabicyclo-[3.3.3]-undecanes, also referred to as stannatranes, and tetraaza-1-stannabicyclo-[3.3.3] undecanes, also referred to as azastannatranes, are described, as are methods for their preparation. These cyclic tin compounds are resistant to rearrangement and the generation of dialkyltin impurities is not observed during the synthesis, purification or deposition of these compounds to form oxostannate films.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
Two classes of cyclic tin compounds, trioxa-aza-1-stannabicyclo-[3.3.3]-undecanes, also referred to as stannatranes, and tetraaza-1-stannabicyclo-[3.3.3] undecanes, also referred to as azastannatranes, are described, as are methods for their preparation. These cyclic tin compounds are resistant to rearrangement and the generation of dialkyltin impurities is not observed during the synthesis, purification or deposition of these compounds to form oxostannate films.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
35.
AZASTANNATRANES, STANNATRANES, AND METHODS OF PREPARATION AND USE THEREOF
Two classes of cyclic tin compounds, trioxa-aza-1-stannabicyclo-[3.3.3]-undecanes, also referred to as stannatranes, and tetraaza-1-stannabicyclo-[3.3.3] undecanes, also referred to as azastannatranes, are described, as are methods for their preparation. These cyclic tin compounds are resistant to rearrangement and the generation of dialkyltin impurities is not observed during the synthesis, purification or deposition of these compounds to form oxostannate films.
A method of protecting hair from damage by applying a long-chain unhydrolyzed alkyltrialkoxysilane to hair shafts and then hydrolyzing and polymerizing the alkyltrialkoxysilane to form a non-penetrating outer layer on the hair shaft by utilizing pH adjusted water followed by the application of heat. Alternatively, the alkyltrialkoxysilane may be applied to the hair in combination with an alkyl or alkenyl succinic anhydride prior to the application of heat.
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
A method of protecting hair from damage by applying a long-chain unhydrolyzed alkyltrialkoxysilane to hair shafts and then hydrolyzing and polymerizing the alkyltrialkoxysilane to form a non-penetrating outer layer on the hair shaft by utilizing pH adjusted water followed by the application of heat. Alternatively, the alkyltrialkoxysilane may be applied to the hair in combination with an alkyl or alkenyl succinic anhydride prior to the application of heat.
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
A method of synthesizing a high purity acryloxyalkyldimethylchlorosilane involves (a) reacting an acrylate salt with a haloalkyldimethylalkoxysilane to form an acryloxy-substituted alkyldimethylalkoxysilane; and (b) displacing the alkoxy group in the acryloxy-substituted alkyldimethylalkoxysilane using a chloride-containing compound to form the acryloxyalkyldimethylchlorosilane. The acryloxyalkyldimethylchlorosilane, which may be used as an end-capper for AROP, has a purity of greater than about 99% and contains no detectable isomeric or hydrogenated impurities.
A method of synthesizing a high purity acryloxyalkyldimethylchlorosilane involves (a) reacting an acrylate salt with a haloalkyldimethylalkoxysilane to form an acryloxy-substituted alkyldimethylalkoxysilane; and (b) displacing the alkoxy group in the acryloxy-substituted alkyldimethylalkoxysilane using a chloride-containing compound to form the acryloxyalkyldimethylchlorosilane. The acryloxyalkyldimethylchlorosilane, which may be used as an end-capper for AROP, has a purity of greater than about 99% and contains no detectable isomeric or hydrogenated impurities.
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
40.
METHODS AND COMPOSITIONS FOR THE PROTECTION OF HAIR
A method of protecting hair from damage by applying a long-chain unhydrolyzed alkyltrialkoxysilane to hair shafts and then hydrolyzing and polymerizing the alkyltrialkoxysilane to form a non-penetrating outer layer on the hair shaft by utilizing pH adjusted water followed by the application of heat. Alternatively, the alkyltrialkoxysilane may be applied to the hair in combination with an alkyl or alkenyl succinic anhydride prior to the application of heat.
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
A method of synthesizing a high purity acryloxyalkyldimethylchlorosilane involves (a) reacting an acrylate salt with a haloalkyldimethylalkoxysilane to form an acryloxy-substituted alkyldimethylalkoxysilane; and (b) displacing the alkoxy group in the acryloxy-substituted alkyldimethylalkoxysilane using a chloride-containing compound to form the acryloxyalkyldimethylchlorosilane. The acryloxyalkyldimethylchlorosilane, which may be used as an end-capper for AROP, has a purity of greater than about 99% and contains no detectable isomeric or hydrogenated impurities.
C08G 77/24 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen halogen-containing groups
42.
METHOD FOR INDUCING GREATER WETTABILITY OF CONTACT LENS COMPOSITIONS DURING MOLDING
A method for producing a contact lens having a water contact angle below about 90° involves preparing a molding resin comprising a polyether modified polyolefin; forming the molding resin into a mold; preparing a contact lens composition; filling the contact lens composition into the mold; and polymerizing the contact lens composition to form a contact lens. A method of inducing water contact angle below 90° and improved surface wettability of a contact lens involves cast polymerizing a mixture of monomers in a mold formed from a molding resin containing a polyether modified polyolefin to form a contact lens having a water contact angle of less than about 90°. Single-use molds for contact lens manufacture are also provided.
A method for producing a contact lens having a water contact angle below about 90° involves preparing a molding resin comprising a polyether modified polyolefin; forming the molding resin into a mold; preparing a contact lens composition; filling the contact lens composition into the mold; and polymerizing the contact lens composition to form a contact lens. A method of inducing water contact angle below 90° and improved surface wettability of a contact lens involves cast polymerizing a mixture of monomers in a mold formed from a molding resin containing a polyether modified polyolefin to form a contact lens having a water contact angle of less than about 90°. Single-use molds for contact lens manufacture are also provided.
C08F 230/08 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
C08L 51/08 - Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
44.
METHOD FOR INDUCING GREATER WETTABILITY OF CONTACT LENS COMPOSITIONS DURING MOLDING
A method for producing a contact lens having a water contact angle below about 90° involves preparing a molding resin comprising a polyether modified polyolefin; forming the molding resin into a mold; preparing a contact lens composition; filling the contact lens composition into the mold; and polymerizing the contact lens composition to form a contact lens. A method of inducing water contact angle below 90° and improved surface wettability of a contact lens involves cast polymerizing a mixture of monomers in a mold formed from a molding resin containing a polyether modified polyolefin to form a contact lens having a water contact angle of less than about 90°. Single-use molds for contact lens manufacture are also provided.
C08F 230/08 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
C08L 51/08 - Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
45.
METHOD AND PRECURSORS FOR PRODUCING OXOSTANNATE RICH FILMS
A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2:
A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200° C.; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physisorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2:
(RfCH2)nSnX(4-n) (I)
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.
C07F 7/08 - Compounds having one or more C—Si linkages
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
47.
METHOD AND PRECURSORS FOR PRODUCING OXOSTANNATE RICH FILMS
A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200°C; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physi sorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Rfis a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2: (Rf2(4-n)(4-n) (I)
A method for forming a fluorinated oxostannate film involves vaporizing a volatile fluorinated alkyltin compound having at least two hydrolytically sensitive functional groups or at least two reactive functional groups which are sensitive to oxidation at a temperature greater than 200°C; providing a substrate; physisorbing or chemisorbing the fluorinated alkyltin compound onto the substrate; and exposing the physi sorbed or chemisorbed fluorinated alkyltin compound to a sequence of hydrolysis, irradiation, and/or oxidation steps to form the fluorinated oxostannate thin film on the substrate. Fluorinated alkyltin compounds having formula (I) are also described, in which Rf is a fluorinated or partially fluorinated linear or branched alkyl group having about 1 to about 5 carbon atoms, X is a dialkylamino group having about 1 to about 4 carbon atoms, and n is 1 or 2: (RfCH2)nSnX(4-n) (I)
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Silicon-based tetrahydrocannabinol derivatives and methods for their synthesis are provided, in which the derivatives contain a tetrahydrocannabinol molecule and at least one silicon-based group containing Si-O-Si bonds. The derivatives are useful in topical and dermatological compositions, have potential beneficial topical properties, and enhance solubility and compatibility in topical and dermatological formulations containing the silicon-based materials.
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
Silicon-based tetrahydrocannabinol derivatives and methods for their synthesis are provided, in which the derivatives contain a tetrahydrocannabinol molecule and at least one silicon-based group containing Si—O—Si bonds. The derivatives are useful in topical and dermatological compositions, have potential beneficial topical properties, and enhance solubility and compatibility in topical and dermatological formulations containing the silicon-based materials.
Silicon-based tetrahydrocannabinol derivatives and methods for their synthesis are provided, in which the derivatives contain a tetrahydrocannabinol molecule and at least one silicon-based group containing Si-O-Si bonds. The derivatives are useful in topical and dermatological compositions, have potential beneficial topical properties, and enhance solubility and compatibility in topical and dermatological formulations containing the silicon-based materials.
Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.
A61K 8/892 - Polysiloxanes saturated, e.g. dimethicone, phenyl trimethicone, C24-C28 methicone or stearyl dimethicone modified by a hydroxy group, e.g. dimethiconol
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.
C23C 16/16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/452 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:0) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:0 films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.
A vapor deposition process is provided for the growth of as-deposited hydrogen-free silicon carbide (SiC) and SiC films including oxygen (SiC:O) thin films. For producing the SiC thin films, the process includes providing a silahydrocarbon precursor, such as TSCH (1,3,5-trisilacyclohexane), in the vapor phase, with or without a diluent gas, to a reaction zone containing a heated substrate, such that adsorption and decomposition of the precursor occurs to form stoichiometric, hydrogen-free, silicon carbide (SiC) in a 1:1 atom ratio between silicon and carbon on the substrate surface without exposure to any other reactive chemical species or co-reactants. For the SiC:O films, an oxygen source is added to the reaction zone to dope the SiC films with oxygen. In the silahydrocarbon precursors, every carbon atom is bonded to two silicon atoms, with each silicon atom being additionally bonded to two or more hydrogen atoms.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
60.
SILICON-BASED THIN FILMS FROM N-ALKYL SUBSTITUTED PERHYDRIDOCYCLOTRISILAZANES
Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C07F 7/21 - Cyclic compounds having at least one ring containing silicon but no carbon in the ring
61.
GRADIENT GLASS-LIKE CERAMIC STRUCTURES AND BOTTOM-UP FABRICATION METHOD THEREOF
Thin glass-like ceramic films which possess organic or physically functional structures with thicknesses in the 15 to 500 nm range and bottom-up methods for their fabrication are described. SiCk-rich structures having gradient properties are formed from a silsesquioxane having an electronegative β substituent and at least one organofunctional silane or at least one metal alkoxide.
C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
62.
N-alkyl substituted cyclic and oligomeric perhydridosilazanes, methods of preparation thereof, and silicon nitride films formed therefrom
Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.
A method for deposition of a thin film onto a substrate is provided. The method includes providing a source precursor containing on or more of elements constituting the thin film, generating a transient species from the source precursor, and depositing a thin film onto the substrate from the transient species. The transient species being a reactive intermediate that has a limited lifetime in a condensed phase at or above room temperature.
C23C 16/16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/452 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
Silicon-based cannabidiol derivatives and methods for their synthesis are provided, in which the derivatives contain a cannabidiol molecule and at least one silicon-based group containing Si-O-Si bonds. The derivatives are useful in cosmetic and topical compositions, have potential beneficial topical properties, and enhance solubility and compatibility in cosmetic formulations containing the silicon-based materials. Silicone elastomers infused with compositions containing the silicon-based cannabidiol derivatives and trisiloxanes are also provided.
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
A61Q 1/00 - Make-up preparationsBody powdersPreparations for removing make-up
C07C 43/305 - Compounds having groups having acetal carbon atoms as ring members or bound to carbon atoms of rings other than six-membered aromatic rings
Silicon-based cannabidiol derivatives and methods for their synthesis are provided, in which the derivatives contain a cannabidiol molecule and at least one silicon-based group containing Si—O—Si bonds. The derivatives are useful in cosmetic and topical compositions, have potential beneficial topical properties, and enhance solubility and compatibility in cosmetic formulations containing the silicon-based materials. Silicone elastomers infused with compositions containing the silicon-based cannabidiol derivatives and trisiloxanes are also provided.
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
C07F 7/08 - Compounds having one or more C—Si linkages
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
01 - Chemical and biological materials for industrial, scientific and agricultural use
05 - Pharmaceutical, veterinary and sanitary products
Goods & Services
Mold, mildew, bacteria, and fungus inhibiting chemicals of water and alcohol base for preventing growth of mold, mildew, bacteria, and fungus on various surfaces Water and alcohol-based antimicrobial coatings to treat the growth of and destroy mold, mildew, bacteria and fungus on various surfaces
68.
COMPOSITIONS AND METHODS FOR RESHAPING KERATIN-RICH SUBSTRATES AND FORMING ADHERENT FLEXIBLE FILMS
Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.
Compositions and methods for reshaping keratin-rich substrates while forming adherent flexible films contain emulsified or soluble mixtures of silanols and hemiaminals or the reaction products of silanols and hemiaminals including silylated hemiaminals. A method for treating split-ends in hair is also described.
A61K 8/892 - Polysiloxanes saturated, e.g. dimethicone, phenyl trimethicone, C24-C28 methicone or stearyl dimethicone modified by a hydroxy group, e.g. dimethiconol
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
A new class of compounds known as chalcogenosilacyclopentanes is described. These compounds are five-membered ring structures containing a silicon-selenium or silicon-tellurium bond, as shown in Formulas (I) and (II). In these compounds, the substituents on the silicon and on the ring carbons may be hydrogen, alkyl, alkoxy, aromatic, or ether groups. The chalcogenosilacyclopentane compounds undergo ring-opening reactions with hydroxyl and other protic functionalities and may be used to prepare substrates that are amenable to thin film deposition techniques such as ALD and CVD.
C07F 7/08 - Compounds having one or more C—Si linkages
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
A thin film deposition process is provided. The process includes, in a single cycle, providing a precursor in the vapor phase with or without a carrier gas to a reaction zone containing a substrate, such that a monolayer of the precursor is adsorbed to a surface of the substrate and the adsorbed monolayer subsequently undergoes conversion to a discrete atomic or molecular layer of a thin film, without any intervening pulse of or exposure to other chemical species or co-reactants.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/02 - Pretreatment of the material to be coated
72.
Bifunctional poly(alkyleneoxides) with aminoalkyl and unsaturated termini and derivatives thereof
A heterofunctional poly(alkyleneoxide) according to the invention contains a first polymer terminus containing a protected, unprotected, or derivatized amine or aminoalkyl functionality and a second polymer terminus containing an unsaturated functionality. Reaction products, derivatives, and methods of making these materials are also described.
C08G 65/337 - Polymers modified by chemical after-treatment with organic compounds containing other elements
C08G 65/329 - Polymers modified by chemical after-treatment with organic compounds
C08G 65/336 - Polymers modified by chemical after-treatment with organic compounds containing silicon
C08G 65/26 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers and other compounds
Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.
Materials containing the reaction products of a cyclic azasilane with water and a compound or polymer containing an isocyanate or epoxy functional group and methods for their synthesis are provided. Stable mixtures containing a cyclic azasilane and a compound or polymer containing an isocyanate or epoxy functional group according to invention are stored under anhydrous conditions. The invention also provides a novel class of materials, mono and bis(cycloaza)disiloxanes comprising one or two cyclic structures bridged by an Si—O—Si bond.
C08G 18/71 - Monoisocyanates or monoisothiocyanates
C08G 18/73 - Polyisocyanates or polyisothiocyanates acyclic
C08G 18/28 - Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
A new class of cyclotrisiloxanes having alkyl ether substituents on one, two, or three of the ring silicon atoms and a method for their preparation are provided. These compounds undergo living anionic ring-opening polymerization to generate unique polymer structures. A new class of hydridosilylethylcyclotrisiloxanes is also described.
A new class of cyclotrisiloxanes having hydridosiloxanylalkyl substituents on one, two, or three of the ring silicon atoms and a method for their preparation are provided. These compounds undergo living anionic ring-opening polymerization to generate unique polymer structures.
C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
C08G 77/50 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
C07F 19/00 - Metal compounds according to more than one of main groups
C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
C07F 7/21 - Cyclic compounds having at least one ring containing silicon but no carbon in the ring
77.
Methods and System for the Integrated Synthesis, Delivery, and Processing of Source Chemicals for Thin Film Manufacturing
An integrated system for synthesis of a film-forming precursor, consumption of the precursor and formation of a thin film on a substrate is provided. The integrated system includes a raw material source, a precursor synthesis chamber in communication with the raw material source, a thin film processing chamber in communication with the precursor synthesis chamber for supplying the precursor from the precursor synthesis chamber to the thin film processing chamber in a controlled manner for consumption of the precursor to form the thin film on the substrate, a monitoring system for monitoring of the thin film formation in the thin film processing chamber and/or the precursor synthesis in the precursor synthesis chamber, and a controller for controlling a rate of the precursor synthesis, precursor consumption and/or thin film formation. The rate of precursor synthesis is synchronized with the rate of precursor consumption for formation of the thin film.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23F 4/00 - Processes for removing metallic material from surfaces, not provided for in group or
78.
UV curable adhesive and coating compositions activated by surface hydroxyl groups or moisture
Compositions which undergo cure by irradiation with UV, visible light or electron beam only after activation by hydroxylated surfaces or exposure to moisture are based on mixtures of cyclic thiasilanes and unsaturated silanes, siloxanes or hydrocarbons.
C08G 77/28 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen sulfur-containing groups
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
C08G 77/20 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
79.
High-speed moisture-cure hybrid siloxane/silsesquioxane-urethane and siloxane/silsesquioxane-epoxy systems with adhesive properties
Materials containing the reaction products of a cyclic azasilane with water and a compound or polymer containing an isocyanate or epoxy functional group and methods for their synthesis are provided. Stable mixtures containing a cyclic azasilane and a compound or polymer containing an isocyanate or epoxy functional group according to invention are stored under anhydrous conditions. The invention also provides a novel class of materials, mono and bis(cycloaza)disiloxanes comprising one or two cyclic structures bridged by an Si—O—Si bond.
C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
C08G 18/71 - Monoisocyanates or monoisothiocyanates
C08G 18/73 - Polyisocyanates or polyisothiocyanates acyclic
C08G 18/28 - Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
A stabilized mixture containing an alkyltrialkoxysilane hydrolysate solution and an amine functional silicone emulsion is provided. The stabilized mixture may be utilized in a masonry treatment product or a cellulosic or wood treatment product, such as to provide waterproofing properties, or in a hair care treatment product for improving hair combability. A method of preparing the mixture involves hydrolyzing an alkoxysilane to form an aqueous solution containing alkylsilanetriols and/or oligomeric alkylsilanetriol condensates; and stabilizing the solution by adding an amine functional silicone.
A61K 8/58 - Cosmetics or similar toiletry preparations characterised by the composition containing organic compounds containing atoms other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur or phosphorus
A61K 8/898 - Polysiloxanes containing atoms other than silicon, carbon, oxygen and hydrogen, e.g. dimethicone copolyol phosphate containing nitrogen, e.g. amodimethicone, trimethyl silyl amodimethicone or dimethicone propyl PG-betaine
B05D 5/08 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
C04B 103/00 - Function or property of the active ingredients
C08G 77/26 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen nitrogen-containing groups
C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
81.
Hydridosilapyrroles, hydridosilaazapyrroles, thiasilacyclopentanes, method for preparation thereof, and reaction products therefrom
Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.
Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.
A novel synthetic route to new classes of polymeric coupling agents using substituted epoxy monomers is reported. In the presence of an initiating agent and tris(pentafluorophenyl)borane catalyst, substituted epoxy monomers bearing polyalkylene oxide and trialkoxysilane moieties undergo a ring-opening polymerization. The polymerization is highly versatile and allows for the fine-tuning of functional, structural, and architectural features of the resulting polymeric coupling agents. These new polyalkylene oxides substituted with organosilyl groups are capable of bonding to and modifying inorganic surfaces. The products of this invention form thin hydrophilic films.
This invention pertains to UV-absorbing coatings that may optionally be covered with an anti-reflective layer and that are applied to exterior-facing surfaces such as a window or other glass surface that are transparent or translucent. Such coatings are visible to various species of birds, but are generally transparent to humans. The UV absorbing coatings have a silane- or silane-derived chromophore or a combination of a silane- or siloxane-based material and a chromophore, which chromophores absorb UV light at about 300 to about 400 nm. More particularly, the silane- or siloxane-based chromophore is 2-hydroxy-4-(3-triethoxysilylpropoxy) diphenylketone or a derivative thereof.
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
C03C 17/30 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
A01M 29/08 - Scaring or repelling devices, e.g. bird-scaring apparatus using visual means, e.g. scarecrows, moving elements, specific shapes, patterns or the like using reflection, colours or films with specific transparency or reflectivity
B32B 37/24 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
E06B 5/10 - Doors, windows, or like closures for special purposesBorder constructions therefor for protection against air-raid or other war-like actionDoors, windows, or like closures for special purposesBorder constructions therefor for other protective purposes
Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.
Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.
This invention pertains to UV-absorbing coatings that may optionally be covered with an anti-reflective layer and that are applied to exterior-facing surfaces such as a window or other glass surface that are transparent or translucent. Such coatings are visible to various species of birds, but are generally transparent to humans. The UV absorbing coatings have a silane- or silane-derived chromophore or a combination of a silane- or siloxane-based material and a chromophore, which chromophores absorb UV light at about 300 to about 400 nm. More particularly, the silane- or siloxane-based chromophore is 2-hydroxy-4-(3-triethoxysilylpropoxy)diphenylketone or a derivative thereof.
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
C03C 17/30 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
A01M 29/08 - Scaring or repelling devices, e.g. bird-scaring apparatus using visual means, e.g. scarecrows, moving elements, specific shapes, patterns or the like using reflection, colours or films with specific transparency or reflectivity
B32B 37/24 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
89.
High-speed moisture-cure hybrid siloxane/silsesquioxane-urethane and siloxane/silsesquioxane-epoxy systems with adhesive properties
Materials containing the reaction products of a cyclic azasilane with water and a compound or polymer containing an isocyanate or epoxy functional group and methods for their synthesis are provided. Stable mixtures containing a cyclic azasilane and a compound or polymer containing an isocyanate or epoxy functional group according to invention are stored under anhydrous conditions. The invention also provides a novel class of materials, mono and bis(cycloaza)disiloxanes comprising one or two cyclic structures bridged by an Si—O—Si bond.
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
C08G 18/71 - Monoisocyanates or monoisothiocyanates
C08G 18/73 - Polyisocyanates or polyisothiocyanates acyclic
C08G 18/28 - Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
2 (I).
3, m is an integer of 1 to about 24, R″ is a hydrocarbon bridge having 1 to about 11 carbon atoms, n is an integer from 0 to 2, and X is H, Cl or an alkoxy group. The inventive materials may be used to produce siloxanes or silicones by hydrolytic condensation and have utility in surface modification.
A continuous or semi-continuous process for producing a high purity germane includes (a) preparing a reaction mixture containing hydrogen and crude germane and (b) separating the hydrogen from the crude germane by a pressure swing adsorption process. The pressure swing adsorption process results in a hydrogen-rich product stream and a germane-rich product stream. The method further includes (c) purifying the germane-rich product stream by continuous distillation thereof to remove impurities therefrom and to produce a high purity germane containing less than 0.1 volume percent of impurities.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
F25J 3/08 - Separating gaseous impurities from gases or gaseous mixtures
C01B 3/56 - Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solidsRegeneration of used solids
C01B 6/06 - Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or poloniumMonoboraneDiboraneAddition complexes thereof
A series of silicon compounds are provided, which are excellent precursors to small carbosilanes, such as 1,3,5-trisilapentane, 2,4,6-trisilaheptane, tris(silylmethyl)silane and tetrakis(silylmethyl)silane. A method of preparing a carbosilane involves forming a Grignard, lithium, or metallic reagent from a halomethyltrialkoxysilane, reacting the Grignard, lithium, or metallic reagent with a dihalodihydridosilane, a trihalohydridosilane, a tetrahalosilane, a dialkoxydihydridosilane, a trialkoxyhydridosilane, or a tetraalkoxysilane to yield a carbosilane precursor, and reducing the precursor to form the carbosilane.
A convenient, practical method for forming elastomers from dual functional siloxanes that cure by a step-growth mechanism is provided. The method involves preparing a first mixture containing a first telechelic siloxane and a hydrosilylation catalyst; preparing a second mixture containing a second telechelic siloxane and a dual functional siloxane having two different polymer termini; and reacting the first mixture with the second mixture to produce the siloxane elastomer. The first and second mixtures may be stored separately until time of use.
C08L 83/14 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
C08G 77/38 - Polysiloxanes modified by chemical after-treatment
Novel silicon compounds containing a siloxane or silane moiety and at least one moiety derived from a furfuryl alcohol, and methods for their synthesis, are provided. The novel compounds may be used as surface modifying agents, surfactants, defoamers, and as monomers for silicone polymerization.
A series of silicon compounds are provided, which are excellent precursors to small carbosilanes, such as 1,3,5-trisilapentane, 2,4,6-trisilaheptane, tris(silylmethyl)silane and tetrakis(silylmethyl)silane. A method of preparing a carbosilane involves forming a Grignard, lithium, or metallic reagent from a halomethyltrialkoxysilane, reacting the Grignard, lithium, or metallic reagent with a dihalodihydridosilane, a trihalohydridosilane, a tetrahalosilane, a dialkoxydihydridosilane, a trialkoxyhydridosilane, or a tetraalkoxysilane to yield a carbosilane precursor, and reducing the precursor to form the carbosilane.
polymeric coating materials, namely, modified silicone coatings for use in increasing water repellency for glass and vitreous surfaces; modified coatings and encapsulants made of silicone applied to electronic and optical devices, microelectrodes, and other electronic devices to create strong, mechanically protective, permeable films; modified silicone coatings applied to glass and vitreous surfaces to impart water-repellency, lubricity and surface resistivity; Polymeric materials, namely, processed silsesquioxane resins used as additives to modify surface properties, wettability and strength of coatings and composites; Polysiloxane and silane coating compositions for providing silicone films on glass, siliceous and vitreous surfaces or imparting glass-like properties to other surfaces of laboratory and industrial equipment; pigments
100.
Dual functional linear siloxanes, step-growth polymers derived therefrom, and methods of preparation thereof
