Disclosed are methods that include forming an image based on counting a number of detected pulses of secondary electrons (6030,6060) from a sample, the secondary electrons being produced by exposing the sample to an ion beam from a gas ion source, and each detected pulse exceeding a minimum pulse value (6080).
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
G01N 23/22 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/22 - Optical or photographic arrangements associated with the tube
A helium ion microscope is used for determining dopant information of a sample. Such information embraces the dopant concentration and dopant location. Concerning the dopant location it is possible to determine lateral dimensions of specific areas as well as depth profiles with the disclosed method. The helium ion microscope is adapted to detect in an energy- and angle resolved manner different types of particles, such as scattered heliums ions, secondary electrons, scattered helium atoms. Furthermore, the energy of the incident helium ion beam and its incident angle with respect to the surface are varied.
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
In one aspect the invention provides a gas field ion microscope that includes an ion source in connection with an optical column, such that an ion beam generated at the ion source travels through the optical column and impinges on a sample. The ion source includes an emitter having a width that tapers to a tip comprising a few atoms. In other aspects, the invention provides methods for using the ion microscope to analyze samples and enhancing the performance of a gas field ion source.
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes
H01J 37/252 - Tubes for spot-analysing by electron or ion beamsMicroanalysers
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
B81B 1/00 - Devices without movable or flexible elements, e.g. microcapillary devices
G01N 23/225 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes