Abstract

3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.

IPC Classes  ?

• C30B 29/36 - Carbides
• C23C 16/32 - Carbides
• C30B 25/02 - Epitaxial-layer growth
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C01B 32/977 - Preparation from organic compounds containing silicon
• C01B 32/956 - Silicon carbide

Abstract

The present invention relates to a chemical vapor deposition silicon carbide (SIC) bulk with improved etching characteristics, in which: the SIC is prepared by a chemical vapor deposition method using methyltrichlorosilane (MTS) and hydrogen (H2) and nitrogen (N2) gases; the SIC prepared by the chemical vapor deposition method is β- SiC(3C-SiC); 6H-SiC is present within the SIC prepared by the chemical vapor deposition method; five peaks having the reference code 03-065-0360 are present when the SIC bulk is XRD-analyzed such that peaks are checked, and a peak having a reference code 00-049-1428 is also present in the SIC bulk; and a nitrogen concentration value at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer, is 4.0x1018 atoms/cm3 or more, and thus a SiC, of which etching characteristics are improved so as to improve yield rate in a semiconductor process and retention period is increased so as to reduce costs, can be provided, and an SiC, of which the uniformity of resistance value and nitrogen concentration is greatly improved so as to be usable in an ultra-fine process, can be provided.

IPC Classes  ?

• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/32 - Carbides