A magnetoresistance (MR) structure includes one or more MR elements each having a serpentine layout formed from two or more groups of parallel lines, the two or more groups of parallel lines connected by a first plurality of metal pads at a first end of the MR structure and a second plurality of metal pads at a second end of the MR structure opposite from the first end. A coil structure and technique for exciting the one or more magnetoresistance (MR) elements are also disclosed.
Systems, circuits, and methods provide for detection of open-circuit states in an external conductor using inductive coupling. An on-chip coil is used to generate a reference magnetic field. An in-package conductor loop is connected to the external conductor. When the external conductor is continuous, the reference magnetic field generates an induced current in the in-package conductor whereas no induced current is generated when the external conductor is broken. The presence of an induced current produces an induced magnetic field, tending to cancel the reference magnetic field. The cancellation or attenuation of the reference magnetic field can be detected by an included magnetic field sensor and a comparator. Examples can include use of a closed loop acting as a feedback loop. The feedback loop can adjust the strength of a feedback magnetic field directed at the magnetic field sensor and used to compensate for nonlinearities of the magnetic field sensor.
G01R 31/327 - Testing of circuit interrupters, switches or circuit-breakers
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
G01R 19/25 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
3.
GMR LAYOUT FOR COMPACT TRANSDUCER WITH MISMATCH CONTROL
A magnetoresistance (MR) structure includes one or more MR elements each having a serpentine layout formed from two or more groups of parallel lines, the two or more groups of parallel lines connected by a first plurality of metal pads at a first end of the MR structure and a second plurality of metal pads at a second end of the MR structure opposite from the first end. A coil structure and technique for exciting the one or more magnetoresistance (MR) elements are also disclosed.
Systems, circuits, and methods provide heat-sink-coupled conductive structures having eddy current mitigation structures, formed as S-notches, and integrated current sensors. An example conductive structure includes a high-current conductor structure having a main current path including an S-notch portion configured to mitigate eddy currents. The structure includes a low-current conductor structure connected to a first heat sink and having a main current path configured to conduct a second current. A differential current sensor is connected to the low-current conductor structure and configured to detect current flowing in the high-current conductor structure. A power module includes the conductive structure and a power converter that is configured to convert power between the first current in the high-current conductor structure and the second current in the low-current conductor structure. The conductive structures and power modules can be used for EV applications.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
Systems, circuits, and methods provide core-based closed-loop current sensors utilizing a coil connected to an IC having a magnetic field sensor configured to measure current in one or more conductors such as busbars. A closed-loop current sensor includes a magnetic core having first and second ends separated by a gap and an aperture receiving the one or more conductors; a magnetic field sensor disposed on a substrate and integrated in an IC is disposed in the gap, where the magnetic field sensor is configured to receive magnetic flux from the gap, where the IC is configured to measure AC current in the one or more conductors; and a coil integrated with the substrate and coupled to the IC, wherein the coil is configured to provide negative magnetic feedback for closed-loop compensation.
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
G01R 3/00 - Apparatus or processes specially adapted for the manufacture of measuring instruments
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
According to one aspect of the disclosure, a sensor includes a substrate; a back bias magnet arranged to generate a bias field at least having components in a plane parallel to a surface of the substrate, the bias field having a horizontal symmetry axis within the plane; and a plurality of sensing element groups disposed at different locations on a surface of the substrate and laid out along a common line aligned with the horizontal symmetry axis of the back bias magnet, each of the plurality of sensing element groups having one or more tunneling magnetoresistance (TMR) vortices having an axis of maximum sensitivity aligned with the common line.
Methods and apparatus for heterogenous ASIL communication in an isolated gate driver. In embodiments, a gate driver includes an internal or external transformer to provide power and/or data communication from a primary side to a second side through an isolation barrier. One or more capacitive channels provide communication between the primary and secondary sides. By providing independent isolated channels of differing types, heterogenous ASIL functionality is provided.
A current sensor integrated circuit package includes a primary conductor having an input portion into which a current flows and an output portion from which the current flows, a plurality of secondary leads, and a semiconductor die disposed adjacent to a top surface of the primary conductor and positioned on an insulator portion. In some embodiments, at least one magnetic field sensing element is supported by the semiconductor die. In some embodiments, the package includes a package body with a first portion enclosing the semiconductor die and a first portion of the primary conductor and a second portion enclosing an elongated portion of the plurality of secondary leads, wherein a second portion of the primary conductor is exposed. A pad is secured to the package body and a pillar extends from the primary conductor to the pad.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
H10N 59/00 - Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups
9.
ISOLATION TRANSFORMER PACKAGES WITH MAGNETOSTRICTION MANAGEMENT
Isolation transformer packages and structures and related methods reduce or minimize deleterious effects arising from magnetostriction during operation of the included transformer. An example transformer based integrated circuit package includes a substrate including a cavity, with the cavity including an aperture. A magnetic core is disposed in the cavity, with the magnetic core includes a soft ferromagnetic material. The cavity is configured to provide a space between an interior surface of the cavity and an exterior surface of the magnetic core. A cap is disposed in the aperture and configured to seal the aperture. A plurality of conductive traces forming first and second coils is disposed about the magnetic core, with the first and second coils and magnetic core forming a transformer.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
H01L 23/04 - ContainersSeals characterised by the shape
H01L 23/06 - ContainersSeals characterised by the material of the container or its electrical properties
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
10.
HYBRID GaN AND BCD DEVICES USING HETEROEPITAXY ON SILICON
According to one aspect of the present disclosure, a semiconductor device includes a first substrate having a lattice structure, wherein the first substrate includes a gallium nitride (GaN) area adjacent to a bipolar junction transistor (BJT) complementary metal oxide semiconductor (CMOS) double diffused metal oxide semiconductor (DMOS) (BCD) area. In some embodiments, the GaN area comprises one or more GaN device layers disposed on the first substrate. In some embodiments, the BCD area comprises one or more BCD device layers. In some embodiments, the first substrate comprises a silicon (100) lattice structure configuration. In some embodiments, the GaN devices layers comprise one or more GaN device layers having a cubic structure and one or more GaN device layers having a wurtzite structure.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
A current sensor integrated circuit (IC) package includes an insulation structure disposed between a semiconductor die and a lead frame to control gap height and prevent the die from tilting and dropping the magnetic field coupling between the die the primary conductor. An insulation structure is disposed between the die and the lead frame such that the die remains level and magnetic coupling remains intact. An insulation structure may control the gap height between the lead frame and the die evenly during transfer molding, by supporting the die across its length and/or width. Epoxy dots are also or instead used to control the gap height and eliminate die tilt.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
12.
CLOSED LOOP MAGNETIC FIELD SENSOR WITH CURRENT CONTROL
Method and apparatus for a closed loop CAPS magnetic field sensor having an emitter coil current that corresponds to a distance from a target. An emitter coil drive circuit outputs an emitter current to an emitter coil for generating an emitter field and a reference coil drive circuit outputs a reference current to a reference coil for generating a reference field. The combined fields generate an applied field and a magnetic field sensing element generates an electric signal. The sensor has a closed loop configuration with a feedback path that includes the emitter coil drive circuit and the emitter coil and is configured to modify an amplitude of the emitter current signal based on a distance from the target to the magnetic field sensing element.
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
Systems, structures, packages, circuits, and methods provide transformer packages with transformers having core covers with coil portions. A first plurality of conductive traces in a substrate forms first portions of first and second transformer coils. A core cover includes a second plurality of conductive traces forming second portions of the transformer coils and configured to extend around a portion of a provided magnetic core. The core covers are configured such that first (primary) and second (secondary) transformer coils are formed when the second plurality of conductive traces is brought into contact with the first plurality of conductive traces. One or more integrated circuits may be included with transformer packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
14.
ELECTROSTATIC DISCHARGE PROTECTION FOR STACK DIE TECHNOLOGY
According to one aspect of the present disclosure, a semiconductor electrostatic discharge (ESD) device includes a substrate. In some embodiments one or more dielectric layers disposed on the substrate. In some embodiments, there are one or more polysilicon diodes disposed within the one or more dielectric layers. In some embodiments, there is a metallization layer with two or more metal interconnect pads. In some embodiments, there are two or more vias, wherein a first via is connected to a first metal interconnect pad and a second via is connected to a second metal interconnect pad, wherein the polysilicon diodes are connected to the two or more vias, wherein the one or more polysilicon diodes are configured to provide ESD protection at the metal interconnect pads.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
15.
TRANSFORMER-BASED INTEGRATED CIRCUIT PACKAGES HAVING FRACTIONAL COIL STRUCTURES
Systems, structures, packages, circuits, and methods provide transformers (120; 350; 620) having fractional coil structures. A first plurality of conductive traces (104; 311; 604) in a substrate (101; 301; 601) forms first portions of first and second transformer coils (111a, 111b; 351a, 351b; 611a, 611b). Two or more fractional coil structures (108; 330; 630) are provided, with each including a second plurality of conductive traces forming second portions of the transformer coils and configured to extend around a portion of a provided magnetic core (106; 320; 606). The fractional coil structures are configured such that first (primary) and second (secondary) transformer coils are formed when the second plurality of conductive traces is brought into contact with the first plurality of conductive traces. A transformer having one or more fractional coil structures can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
Systems, structures, packages, circuits, and methods provide transformers having fractional coil structures. A first plurality of conductive traces in a substrate forms first portions of first and second transformer coils. Two or more fractional coil structures are provided, with each including a second plurality of conductive traces forming second portions of the transformer coils and configured to extend around a portion of a provided magnetic core. The fractional coil structures are configured such that first (primary) and second (secondary) transformer coils are formed when the second plurality of conductive traces is brought into contact with the first plurality of conductive traces. A transformer having one or more fractional coil structures can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01F 1/06 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder
H01F 1/10 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials non-metallic substances, e.g. ferrites
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H05K 1/18 - Printed circuits structurally associated with non-printed electric components
17.
MAGNETORESISTANCE ELEMENT INCLUDING A MULTI-LAYERED FREE LAYER STACK TO TUNE HYSTERESIS AND OUTPUT AMPLITUDE
According to one aspect of the present disclosure, a magnetic field sensor includes a magnetoresistance (MR) element. In some embodiments, the MR element includes a reference layer, a free layer, and a barrier layer. In some embodiments the free layer includes two or more cobalt iron boron (CoFeB) layers, wherein a first one of the CoFeB layers is in contact with the barrier layer, and two or more spacer layers. In some embodiments, the CoFeB layers and the spacer layers alternate to form a multilayered free layer structure. In some embodiments, the magnetic field sensor comprises an angle sensor or a current sensor. In some embodiments, the contact between the first one of the CoFeB layers and the barrier layer is configured to reduce hysteresis in the MR element. In some embodiments, the alternating CoFeB layers and spacer layers are configured to increase output amplitude of the MR element.
An integrated circuit package having more than one semiconductor die includes a spark gap to provide a current path designed to protect the device. The spark gap can be provided between an exposed portion of a corner lead and an exposed portion of a tie bar and/or between exposed portions of adjacent leads. The spark gap distance is designed to achieve required ratings for a given application. Stacked and side-by-side die configurations are described.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
19.
INTEGRATED CIRCUIT PIN FOR REFERENCE VOLTAGE AND FAULT COMMUNICATION
A sensor integrated circuit includes a sensing circuit configured to generate the sensor output signal and a fault circuit to detect a fault and generate a fault signal indicative of the fault. A combined signal indicative of the fault signal when a fault is detected and indicative of a reference voltage associated with the sensor IC at other times is provided at a shared connection of the sensor IC. Embodiments include a current sensor IC and fault detectors configured to detect one or more faults.
G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
H02H 3/08 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection responsive to excess current
20.
LOW-POWER MAGNETIC SENSING DEVICE AND MAGNETIC SWITCH DEVICE COMPRISING THE MAGNETIC SENSING DEVICE
Magnetic sensing device integrated in a magnetic switch device that makes or breaks contact in the presence of an external magnetic field, comprising: a first transistor biased at a first terminal by a first bias voltage and a first magnetoresistive element having a first resistance variable with the external magnetic field. At a reference field strength, the first resistance has a first reference resistance value, and the first bias voltage is adjustable to control a first current at the second terminal of the first transistor at a first reference current value. When the external magnetic field is varied around the reference field strength, the first variable resistance varies around the first reference resistance value by a resistance delta, such that the first current modulates around the first reference current value by a current delta. A magnetic switch device comprising the magnetic sensing device is also disclosed.
An integrated circuit (IC) package and assembly includes a stacked arrangement of one or more IC die to leverage additional functionality in a standard package width. Active IC die and high voltage IC capacitors may be stacked in various arrangements to minimize the footprint and width of the IC package. The die are interconnected with each other and a lead frame with wire bonds, silicon vias or other interconnections. Various bond pad configurations are used to interconnect the die. The stacked arrangement of the IC die reduces the width of the supporting lead frame and reduces the overall footprint of the IC package.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
According to aspects of the disclosure, a method is provided for use in a sensor, the method comprising: detecting that a frequency of a first signal is in a first range, the first signal being generated, at least in part, by one or more first magnetic field sensing elements, the first signal being generated in response to a magnetic field that is associated with a rotating target, the rotating target including a plurality of pole pairs; identifying a first resolution that corresponds to the first range and causing the first resolution to become a current resolution of the sensor; and transmitting a data stream in accordance with the current resolution of the sensor, wherein transmitting the data stream includes: (i) transmitting a plurality of speed pulses that encode a speed of the rotating target, and (ii) transmitting a plurality of data pulse sets.
G01D 5/14 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
G01P 3/487 - Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals delivered by rotating magnets
An integrated circuit (IC) regulator includes a pass element and a buffer. The pass element has an input terminal coupled to the regulator input, an output terminal coupled to the regulator output, and a control terminal and the buffer has an output coupled to the regulator output. A pass element current between the input terminal and output terminal is independent of the load current associated with a functional circuit of the IC and the buffer is configured to shunt any portion of the pass element current that is greater than the load current.
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
According to one aspect of the disclosure, a sensor for detecting speed of a target includes: one or more of magnetic field sensing elements operable to generate one or more magnetic field signals indicative of a magnetic field associated with the target having a speed; detection circuitry configured to detect one or more parameters of the target using the magnetic field signals or representations thereof; and an output circuit configured to generate a sensor output signal conveying information about the one or more parameters of the target at a fixed time interval independent of the target speed.
H04L 25/49 - Transmitting circuitsReceiving circuits using code conversion at the transmitterTransmitting circuitsReceiving circuits using predistortionTransmitting circuitsReceiving circuits using insertion of idle bits for obtaining a desired frequency spectrumTransmitting circuitsReceiving circuits using three or more amplitude levels
G01P 3/487 - Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals delivered by rotating magnets
H03M 5/12 - Biphase level code, e.g. split phase code, Manchester codeBiphase space or mark code, e.g. double frequency code
25.
LOW-POWER MAGNETIC SENSING DEVICE AND MAGNETIC SWITCH DEVICE COMPRISING THE MAGNETIC SENSING DEVICE
Magnetic sensing device integrated in a magnetic switch device that makes or breaks contact in the presence of an external magnetic field, comprising: a first transistor biased at a first terminal by a first bias voltage and a first magnetoresistive element having a first resistance variable with the external magnetic field. At a reference field strength, the first resistance has a first reference resistance value, and the first bias voltage is adjustable to control a first current at the second terminal of the first transistor at a first reference current value. When the external magnetic field is varied around the reference field strength, the first variable resistance varies around the first reference resistance value by a resistance delta, such that the first current modulates around the first reference current value by a current delta. A magnetic switch device comprising the magnetic sensing device is also disclosed.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
26.
COMPENSATION MECHANISM FOR EXTENDED LINEARITY OF MAGNETIC FIELD SENSORS
A device, comprising: a magnetic field sensor including: (i) one or more first magnetic field sensing elements arranged to produce a first magnetic field signal in response to a magnetic field, (ii) a programmable gain amplifier (PGA) that is configured to amplify the first magnetic field signal to produce an amplified signal, and (iii) a first circuitry that is configured to generate an output signal based on the amplified signal; and a compensation circuit including: (i) one or more second magnetic field sensing elements that are arranged to produce a second magnetic field signal in response to the magnetic field, and (ii) a second circuitry that is configured to adjust a gain of the PGA based on the second magnetic field signal, thereby causing a gain of the PGA to be increased or decreased based on the magnetic field at one or more second magnetic field sensing elements.
A magnetic field sensor includes magnetoresistance elements supported by a surface of the die defining a plane, and a concentrator layer over the surface of the die and having an aperture. A first magnetoresistance element is adjacent to a first edge of the aperture and has a first reference direction parallel to the surface of the die and substantially perpendicular to the first aperture edge and a second magnetoresistance element is adjacent to a second edge of the aperture and has the first reference direction. The concentrator layer redirects the applied magnetic field to present a differential field parallel to the plane of the die to the magnetoresistance elements in response to applied field perpendicular to the plane of the die and to present a reduced magnitude and common mode field to the magnetoresistance elements in response to the applied field parallel to the plane of the die.
A two-dimensional analog angular magnetic sensor device for measuring an orientation of an external magnetic field, comprising at least a magnetic sensor, comprising a plurality of tunnel magnetoresistance (TMR) elements arranged in a full-bridge configuration and configured to provide a sine output voltage: VSIN=A·sin θ·Vdd, or configured to provide a cosine output voltage VCOS=A·cos θ·Vdd, wherein A is parameter depending on the TMR ratio of the TMR element and Vdd is a bias voltage inputted to the magnetic sensor. The magnetic sensor device further comprises an analog circuit configured to generates a circuit output voltage and electrically connected to the magnetic sensor such as that the magnetic sensor device generates a device output voltage that follows one of: a tangent output voltage VTAN:Vout=K·Vdd·VTAN=K·Vdd·tan θ, where K is a constant; or a cotangent output voltage (VCOTAN):
A two-dimensional analog angular magnetic sensor device for measuring an orientation of an external magnetic field, comprising at least a magnetic sensor, comprising a plurality of tunnel magnetoresistance (TMR) elements arranged in a full-bridge configuration and configured to provide a sine output voltage: VSIN=A·sin θ·Vdd, or configured to provide a cosine output voltage VCOS=A·cos θ·Vdd, wherein A is parameter depending on the TMR ratio of the TMR element and Vdd is a bias voltage inputted to the magnetic sensor. The magnetic sensor device further comprises an analog circuit configured to generates a circuit output voltage and electrically connected to the magnetic sensor such as that the magnetic sensor device generates a device output voltage that follows one of: a tangent output voltage VTAN:Vout=K·Vdd·VTAN=K·Vdd·tan θ, where K is a constant; or a cotangent output voltage (VCOTAN):
V
out
=
K
·
V
dd
·
V
COTAN
=
K
·
V
dd
·
cotan
θ
.
G01R 33/24 - Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
According to one aspect of the present disclosure, a transformer based integrated circuit (IC) package includes a portion including a recess. In some embodiments, a magnetic core disposed in the recess, wherein the recess is configured to provide a space between an interior surface of the recess and an exterior surface of the magnetic core, wherein the magnetic core includes a soft ferromagnetic material. In some embodiments, two or more support structures disposed in the recess and connected to the magnetic core and package portion. In some embodiments, a plurality of conductive traces forming first and second coils disposed about the magnetic core, wherein the first and second coils and magnetic core are configured as a transformer. In some embodiments, a molding material is configured to encapsulate a surface of the package portion and the transformer, wherein the molding material is configured to form a package body.
H01F 27/38 - Auxiliary core membersAuxiliary coils or windings
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
G01D 5/14 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
Method and apparatus for trimming IC components. In an embodiment, a circuit includes a digital controller, a first programmable read only memory coupled to the controller, and a trimmable block having at least one trimmable component. A second programmable read only memory is coupled to the trimmable block, where the second programmable read only memory is independent of the first programmable read only memory.
A power source connection monitor in redundant power systems determines if valid connections are present to a positive and/or negative terminal of each of the power sources. A current detection integrated circuit serves as an internal tie between redundant control units creating an internal power source bus for each connection between the redundant external connections to each power source. The current detection integrated circuit monitors the current in the internal power source bus interconnections to determine its presence and direction. The current detection integrated circuit signals the control units of failing or failed connections to one or more of the power sources.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
33.
INDUCTIVE LINEAR STROKE SENSOR USING DUAL TRACKS WITH DIFFERENT PERIODICITY
A system including: a target having a first track and a second track, a first receiving coil that is aligned with the first track, the first receiving coil having a first period length; a second receiving coil that is aligned with the first track the second receiving coil having a second period length; a third receiving coil that is aligned with the second track the third receiving coil having a third period length; and a fourth receiving coil that is aligned with the second track, the fourth receiving coil having a first period length; and a magnetic field sensor that is configured to generate an output signal that is indicative of a position of the target, wherein the respective target length is less than any of the first period length, the second period length, the third period length, and the fourth period length.
G01D 5/20 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying inductance, e.g. by a movable armature
Variable magnetic coupling touch sensors are described which have a deformable layer with ferromagnetic material distributed throughout its volume, and one or more magnetic field sensing elements that can detect changes in a magnetic field due to deformation of the deformable layer. The ferromagnetic material can include soft ferromagnetic material in some embodiments. The ferromagnetic material can include hard ferromagnetic material in some embodiments. In some embodiments, e.g., ones having soft ferromagnetic material(s), one or more transmitting elements/antennas, e.g., coils, may be utilized to produce an applied magnetic field. Monitoring circuitry can detect changes in a magnetic field or magnetic coupling due to deformation of the deformable layer and produce a corresponding output signal indicative of the deformation of the deformable layer. Magnitude, direction, and/or location of the force or pressure causing the deformation can be determined from the output signal.
Aspects of the present disclosure include systems, structures, circuits, and methods providing voltage-isolation transformers having substrate extensions for the transformer core. First and second substrates are configured about a magnetic core and first and second transformer coils. The first substrate can have a recess for receiving the magnetic core. The second substrate can include a protruding member designed to fit within an aperture of the core to facilitate placement or centering of the core. The second substrate is disposed to cover the recess of the first substrate. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
Systems, structures, packages, circuits, and methods provide IC packages with laminated substrates configured for use with or coupling to a transformer package or assembly. IC packages can include a substrate having an encapsulant presenting an encapsulating volume for encapsulation of one or more IC die. The encapsulating volume can be configured below, at, or above a main surface of the substrate, with the packages including receiving/mounting structures to accommodate coupling of a transformer assembly. The packages and modules may include various types of circuits; in some examples, chips, chip packages, or modules may include a gate driver or other high voltage circuit.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
37.
ISOLATION TRANSFORMER PACKAGES WITH LAMINATED WINDING STRUCTURES
Aspects of the present disclosure include systems, structures, circuits, and methods providing laminated winding structures with coil portions for transformers. Transformer packages can include substrates with winding portions that connect to laminated winding structures to form complete transformer coils configured about a transformer core. The laminated winding structures can include spaces to receive a transformer core when mounted on a substrate. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 27/32 - Insulating of coils, windings, or parts thereof
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
38.
HALL PLATE CURRENT SENSOR HAVING STRESS COMPENSATION
Methods and apparatus for a voltage driven Hall plate current sensor integrated circuit (IC) package that includes a die including a Hall plate with a lateral epi resistor. A gm amplifier receives an output voltage from the Hall plate and a front end amplifier receives an output of the gm amplifier. A compensation circuit compensates for stress on the die that affects a resistance of the Hall plate and includes a lateral epi resistor coupled to a constant current for compensating for piezoresistive stress in the Hall plate.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
According to an embodiment, a magnetic field sensor includes: one or more magnetic field sensing elements; and a magnet structure to provide a bias magnetic field about the one or more magnetic field sensing elements, the magnet structure includes alternating magnetic layers and non-magnetic layers with at least three magnetic layers.
A system, comprising: a sensing element including a plurality of resistive elements; a switching matrix that is configured to change a total resistance of the sensing element by bringing online or offline one or more of the plurality of resistive elements, the total resistance of the sensing element, at any point in time, being based on respective resistances of only those of the plurality of resistive elements that are currently online; a matrix controller that is configured to detect when a value of a counter signal is updated and cause the switching matrix to change the total resistance of the sensing element by bringing offline or online one or more of the plurality of resistive elements based on the value of the counter signal; and a counter signal generator configured to detect whether an offset signal satisfies a predetermined condition and update the value of the counter signal.
Systems, structures, packages, circuits, and methods provide leadless transformer packages for galvanic isolation. An example leadless transformer includes a substrate including opposed first and second surfaces and a plurality of conductive traces. The plurality of conductive traces includes a first group and a second group that are galvanically separate. The first group includes a plurality of exposed portions that are exposed at a first area of the substrate and the second group includes a plurality of exposed portions that are exposed at a second area of the substrate. A magnetic core is disposed on the substrate. First and second coils are each disposed about the magnetic core and configured for connection to the first and second groups of conductive traces, respectively. The package includes a dam disposed on the substrate and configured to surround the magnetic core, and an encapsulant is within the dam, encapsulating the magnetic core.
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
A voltage-isolated transformer and integrated circuit package includes a substrate with opposed first and second surfaces and including a plurality of conductive traces, with a recess disposed in the second surface. The plurality of conductive traces includes a first group and a second group that are galvanically separate. A magnetic core is disposed on the first surface of the substrate. The magnetic core can include a soft ferromagnetic material. First and second coils are configured about the magnetic core and connected to the first and second groups of conductive traces, respectively, with the first and second coils and magnetic core being configured as a transformer. First and second integrated circuit die are disposed in the recess on the second surface. A dam is disposed on the first surface of the substrate and surrounding the magnetic core. An encapsulant disposed in the dam and encapsulating the magnetic core.
H01F 27/32 - Insulating of coils, windings, or parts thereof
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
43.
METHOD AND APPARATUS FOR LIMITING MINORITY CARRIER INJECTION
A driver circuit comprising: a substrate; a first terminal; a second terminal; a switching circuit that is formed on the substrate, the switching circuit including a first switch and a second switch, the first switch having a first drain and a first source, the second switch having a second drain and a second source, the first drain being coupled to the first terminal, the first source being coupled to the second drain, the second source being coupled to ground, and the second terminal being coupled to the first source and the second drain; an electrostatic discharge (ESD) diode that is formed on the substrate; a trigger circuit that is formed on the substrate, the trigger circuit being configured to divert a first electrical current when the trigger circuit is activated, the first electrical current being diverted from the second terminal to the first terminal via the first switch.
H03K 17/06 - Modifications for ensuring a fully conducting state
H03K 17/082 - Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
44.
SENSOR WITH COMMON MODE REJECTION AND OFFSET CORRECTION
A sensing bridge includes a first element type that is responsive to a magnetic field and a second element type that is not responsive to the magnetic field. The first element type can be a magnetoresistance element such as a TMR and the second element type can be a passive resistor. A switching matrix under control of a matrix controller is configured to change a total resistance of the sensing element by coupling or decoupling one or more dots of the TMR and/or passive resistor unit cells of the passive resistor to the sensing element. Test signal generation circuitry is configured to generate a common mode test magnetic field with which the common mode rejection ratio (CMRR) of a sensing bridge can be evaluated and corrected.
Systems, circuits, and methods provide self-calibration for magnetoresistance-based magnetic field sensors. Examples can include use of a closed loop acting as a feedback or calibration loop that is configured to process a reference signal applied to one or more magnetoresistance elements in a MR-based magnetic field sensor that also detects one or more external magnetic fields. The closed loop can adjust a bias voltage applied to the one or more magnetoresistance elements based on the reference signal. The calibration loop can accordingly provide for automatic or self-calibration of sensitivity of one or more magnetoresistance elements of the sensors to compensate for external factors affecting sensitivity of the one or more magnetoresistance elements.
Systems, structures, packages, circuits, and methods provide leadframe-based packages with integrated IC-transformer structures having a transformer providing galvanic isolation for included IC die. An example leadframe-based voltage-isolated IC package includes a leadframe substrate with first and second leadframe, a magnetic core disposed on one side of the leadframe substrate, first and second IC die disposed on the other side of the leadframe substrate, a body including molding material encapsulating the first and second IC die; first and second coils configured about the magnetic core, and a wall configured to surround the magnetic core. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
Methods and apparatus for a current sensor integrated circuit package including a current conductor, which may be a loop, having regions of different widths and first and second magnetic field sensing elements positioned in relation to the current loop. The first magnetic field sensing element generates a first output signal and the second magnetic field sensing element generates a second output signal. An adjustment circuit adjusts the output of the first magnetic field sensing element to generate an adjusted signal for the first magnetic field sensing element that is same as the second output signal. A diagnostic module receives the adjusted signal for the first magnetic field sensing element and the output of the second output signal to detect a presence of a stray field.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
Methods and apparatus for a device having a TMR element that includes a free layer, a spacer layer, and a reference layer. In embodiments, the free layer comprises a vortex layer configured to provide a magnetic vortex, and a coupling layer magnetically coupled to the vortex layer to modulate the vortex in the vortex layer.
Methods and apparatus for a current sensor integrated circuit package that includes a die having a first magnetic field sensing element and a leadframe to support the die. The leadframe has a U-shaped current conductor loop with a throat region and a first notch in the throat region of the current conductor loop. A first magnetic field sensing element is positioned in relation to the first notch. In some embodiments, the first magnetic field sensing element is aligned with an edge of the first notch.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
Methods and apparatus for a signal isolator that mitigates the effects of CMTI strikes. In embodiments, a first die comprises a transmit module and the first die has a first voltage domain; and a second die comprises a receive module including a receive amplifier configured to receive from the transmit module a transmit signal that includes a differential signal and a common mode current. The second die may have a second voltage domain with the first and second die being separated by an isolation barrier. In embodiment, the receive amplifier includes a differential amplifier to receive the differential input signal from the transmit module; and a common mode module configured to sense the common mode current and sink or source the common mode current and minimize changes to an input impedance of the receive amplifier.
In some embodiments, an absolute position sensing system includes a magnetic field sensor and a target structure. The sensor includes an emitting coil configured to generate a magnetic field in response to a current through the emitting coil, a first arrangement of magnetic field sensing elements, and a second arrangement of magnetic field sensing elements. The target structure includes a plurality of coil elements arranged such that, during movement of the target structure relative to the sensor, the emitted field induces a current in different ones of the coil elements resulting in the generation of non-uniform magnetic fields about the first and second arrangements of magnetic field sensing elements. The sensor is configured to process a first signal from the first arrangement of magnetic field sensing elements and a second signal from the second arrangement of magnetic field sensing elements to determine an absolute position of the target structure.
G01D 5/20 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying inductance, e.g. by a movable armature
G01D 5/14 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
G01D 5/16 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
52.
TMR SENSOR HAVING MAGNETIC FIELD GENERATION FOR PILLAR STIMULATION
Methods and apparatus for a magnetic field sensor IC package having groups of arrays of TMR elements each having a pinning direction. An on-chip coil is routed under the TMR elements to conduct current for generating a magnetic field to stimulate the TMR elements. The device may be configured to sense changes in an applied magnetic field.
A signal encoding and decoding protocol to convey discrete sets of information combined in a single carrier signal is disclosed. The protocol uses modulation of both amplitude and pulse width to carry multiple sets of information. A first signal is pulse width modulated to encode a first data and a second signal is pulse amplitude modulated to encode a second data. The two modulated signals are combined to generate a carrier signal encoded with both the first and second data.
H03K 9/08 - Demodulating pulses which have been modulated with a continuously-variable signal of duration- or width-modulated pulses
H04L 25/49 - Transmitting circuitsReceiving circuits using code conversion at the transmitterTransmitting circuitsReceiving circuits using predistortionTransmitting circuitsReceiving circuits using insertion of idle bits for obtaining a desired frequency spectrumTransmitting circuitsReceiving circuits using three or more amplitude levels
54.
CIRCUITS AND METHODS FOR SHUNT RESISTANCE MEASUREMENT
Apparatus and methods for measuring a shunt resistance through which an input current flows, wherein the input current has a first frequency range, include a voltage source configured to generate an AC voltage having a second frequency range that is higher than the first frequency range. An inductor, a capacitor, and the shunt resistance form an RLC network to which the voltage source is coupled. Processing circuitry coupled to receive a superimposed voltage across the shunt resistance is configured to generate a measured resistance indicative of the shunt resistance in response to the superimposed voltage.
According to one aspect of the present disclosure, a voltage isolated integrated circuit (IC) package configuration includes a first package comprising a transformer and a mold material enclosing the transformer to form a first package body, wherein the first package comprises a first lead set to permit electrical connection to the transformer. In some embodiments, a second package comprising a lead frame, two or more semiconductor die supported by the lead frame, and a mold material enclosing the two or more semiconductor die to form a second package body, wherein the lead frame comprises a second lead set to permit electrical connection to the two or more semiconductor die. In some embodiments, the one or more leads of the first lead set is directly electrically connected to one or more leads of the second lead set, wherein the first package and the second package are mechanically coupled together.
Example embodiments include methods and apparatus for a structure having a capacitor, where the structure includes a plurality of inter-metal dielectric (IMD) layers above a substrate, a plurality of metal layers between respective IMD layers. In embodiments, BEOL metal regions and interconnects form plates of the capacitor. In example embodiments, lateral capacitors can be formed away from the substrate.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
Methods and apparatus for optical detection having fast recovery from high amplitude input signals. In embodiments, a LIDAR system includes a photoreceiver to receive a return signal, and a circuit to modulate a gain of the photoreceiver over an acquisition window for the return signal, wherein the acquisition window contains time T0, and wherein the gain at time T0 is at a minimum for the acquisition window. In embodiments, the time T0 is at the beginning of the acquisition window.
A CAN transmitter includes an output branch, a replica branch including a replica of the output branch, and a feedback network. The output branch includes a first resistive element controlled by a first bias voltage and a second resistive element controlled by a second bias voltage. The replica branch has a feedback node that is replicated at a midpoint between the CANH bus terminal and the CANL bus terminal. The feedback network has a first input coupled to the feedback node, a second input configured to receive a midpoint reference voltage indicative of a desired midpoint voltage between the CANH and CANL terminals, and an output at which the first bias voltage is provided. A resistance controller is coupled to a control terminal of the second resistive element and configured to generate the second bias voltage based on a predetermined reference voltage and a bias current.
Aspects of the present disclosure include galvanically-isolated (voltage-isolated) transformer-based integrated circuit (IC) packages providing cavities or spaces, which can, in some examples, be formed by preferentially heating the included magnetic core or a material coating the magnetic core. The provision of a space around the magnetic core allows the magnetic core to underdo size changes due to magnetostriction during use without being constrained or substantially constrained, thus, providing for improved magnetic performance. The circuits, ICs and IC packages and modules may include various types of circuits. In some examples, IC packages or modules may include a galvanically-isolated gate driver or other high voltage circuit.
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
Solignac, Aurélie
Pannetier-Lecoeur, Myriam
Fermon, Claude
Campiglio, Paolo
Daga, Jean-Michel
Abstract
Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.
Systems, circuits, and methods provide controlled active DC bus discharge, such as for electric vehicles (EVs) or hybrid vehicles. Controlled active DC bus discharge can be provided using gate drivers to control operation of traction inverter switches, such as power transistors, to accomplish a charge bleeding function. Power transistors can be configured so that the gate is connected to the drain, thereby forcing the gate threshold voltage across drain and source. The gate of a power transistor can be actively driven between a threshold voltage and Miller plateau threshold voltage. As a result, several volts can be generated across the power transistor while current decays, therefore safely discharging the system DC bus.
H02M 7/5387 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
B60L 15/08 - Methods, circuits or devices for controlling the propulsion of electrically-propelled vehicles, e.g. their traction-motor speed, to achieve a desired performanceAdaptation of control equipment on electrically-propelled vehicles for remote actuation from a stationary place, from alternative parts of the vehicle or from alternative vehicles of the same vehicle train characterised by the form of the current used in the control circuit using pulses
H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
H02P 27/08 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters with pulse width modulation
62.
INDUCTIVE 360-DEGREE ANGLE SENSOR USING A RADIALLY-SEPARATED DUAL TARGET
A method, comprising: providing a target including: (i) a base having a through-hole formed therein that defines an inner perimeter of the base, the base having an outer side running around an outer perimeter of the base, and the base having an inner side running around the inner perimeter of the base, (ii) a first set of first conductive features that are coupled to the outer side of the base, each of the first conductive features extending outwardly, (iii) and a second set of second conductive features that are coupled to the inner side of the base, each of the second conductive features extending inwardly; and detecting an angular position of the target based on a first electrical angle that is associated with the first set of first conductive features and a second electrical angle that is associated with the second set of second conductive features.
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
A heterogeneous sensor system includes a magnetic field sensor and an inductive sensor. A checker is configured to receive the magnetic field sensor output signal and the inductive sensor output signal and determine whether an error has occurred based on a comparison of the magnetic field sensor output signal and the inductive sensor output signal. Targets include at least a portion that is conductive and may include a ferromagnetic portion for back biased magnetic sensing. Additional features include on axis and off axis positioning of the sensors with respect to the target, multi-track targets for absolute position sensing, angle sensing and torque sensing configurations.
G01L 3/10 - Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft involving electric or magnetic means for indicating
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
G01D 3/08 - Measuring arrangements with provision for the special purposes referred to in the subgroups of this group with provision for safeguarding the apparatus, e.g. against abnormal operation, against breakdown
G01D 5/14 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
G01D 5/20 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying inductance, e.g. by a movable armature
G01D 5/56 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using means specified in two or more of groups , , , , and using electric or magnetic means
G01L 3/14 - Rotary-transmission dynamometers wherein the torque-transmitting element is other than a torsionally-flexible shaft
64.
MR SENSORS HAVING LAYER ORIENTATION CONTROL USING SOT CURRENT
Commissariat à l'énergie atomique et aux énergies alternatives (France)
Inventor
Solignac, Aurélie
Pannetier-Lecoeur, Myriam
Fermon, Claude
Campiglio, Paolo
Daga, Jean-Michel
Abstract
Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.
Methods and apparatus for automatic tuning of parameters for field-oriented control (FOC) of a BLDC motor with a controller with user input. Automatic tuning can include measuring electrical parameters comprising Phase resistance (Rs), Phase inductance (Ls), and Back-electromotive force (BEMF) constant (Ke). Automatic tuning can further include tuning of ac alignment and start-up processing, tuning of a current closed loop, and tuning of a speed closed loop.
Methods and apparatus for motor startup with reduced acoustic noise include a startup module to generate a startup d-axis voltage during a startup interval and a startup q-axis voltage during the startup interval, wherein the startup interval ends at a time based on the observer error, and wherein the startup q-axis voltage increases during the startup interval. The startup module is configured to continuously linearly increase the speed of the motor during the startup interval. An observer generates a speed estimate, an angle estimate, and an observer error representative of a difference between an actual angle and the angle estimate. A voltage increment by which the startup q-axis voltage is increased during the startup interval is adjusted based on the observer error. The voltage increment can be equal to a constant value plus the observer error.
Methods and apparatus for magnetic field sensor having a sample chopping with a shared ADC. A sensor may include receiving a chopping sequence for samples from first and second channels that share an analog-to-digital converter (ADC) in a magnetic field sensor. The samples for the first and second channel are timed with respect to a virtual sampling time (VST), such that a sum of the sample times for the samples for the first channel is equal to the VST, and a sum of the sample times for the samples for the second channel is equal to VST.
Magnetoresistive element comprising a reference layer having a fixed reference magnetization; a ferromagnetic sense layer having a free sense magnetization having a stable vortex configuration that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field; and a tunnel barrier layer between the reference layer and the sense layer and contacting a first side of the sense layer. The magnetoresistive element further comprises a hard magnetic layer arranged on a second side (212) of the sense layer opposed to the first side, the hard magnetic layer being configured to generate an interfacial magnetic coupling between the hard magnetic layer and the sense layer on the second side, such as to prevent chirality switching of the sense magnetization after the magnetoresistive element has been submitted to a heat treatment and an external magnetic field above vortex expulsion field.
Aspects of the present disclosure include galvanically-isolated (voltage-isolated) transformer-based integrated circuit (IC) packages providing cavities or spaces for an included magnetic core to underdo size changes due to magnetostriction without being constrained or substantially constrained, thus, providing for improved magnetic performance. The circuits, ICs and IC packages and modules may include various types of circuits. In some examples, IC packages or modules may include a galvanically-isolated gate driver or other high voltage circuit.
H01F 41/00 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
70.
Sensor with adjustable digital output signal resolution
A sensor integrated circuit includes a sensing element configured to generate a sensor output signal proportional to a sensed parameter, a front-end amplifier coupled to receive the sensor output signal and configured to generate an amplifier output signal, and a sigma-delta modulator coupled to receive the amplifier output signal and configured to generate a digital sensor output signal indicative of the sensed parameter. At least one of the front-end amplifier or the sigma-delta modulator has an adjustable setting configured to change a resolution of the digital sensor output signal.
Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.
A system, comprising: a reference magnetic field source that is configured to generate a reference magnetic field; a plurality of magnetic field sensing elements arranged in a sensing bridge, the sensing bridge being configured to sense the reference magnetic field and an external magnetic field simultaneously, the sensing bridge being configured to output a first signal and a second signal; a first circuit that is configured to generate a common mode signal of the sensing bridge based on the first signal and the second signal; an adjustment circuit that is configured to adjust a sensitivity of the sensing bridge based, at least in part, on a common mode signal of the sensing bridge; and a processing circuitry that is configured to use a differential signal of the sensing bridge to generate an output signal, the differential signal being based on a strength of the external magnetic field.
A system, comprising: a reference magnetic field source that is configured to generate a reference magnetic field; a plurality of magnetic field sensing elements arranged in a sensing bridge, the sensing bridge being configured to sense the reference magnetic field and an external magnetic field simultaneously, the sensing bridge being configured to output a first signal and a second signal; a first circuit that is configured to generate a common mode signal of the sensing bridge based on the first signal and the second signal; an adjustment circuit that is configured to adjust a sensitivity of the sensing bridge based, at least in part, on a common mode signal of the sensing bridge; and a processing circuitry that is configured to use a differential signal of the sensing bridge to generate an output signal, the differential signal being based on a strength of the external magnetic field.
Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.
Systems and methods described herein are directed towards integrating a shield layer into a current sensor to shield a magnetic field sensing element and associated circuitry in the current sensor from electrical, voltage, or electrical transient noise. In an embodiment, a shield layer may be disposed along at least one surface of a die supporting a magnetic field sensing element. The shield layer may be disposed in various arrangements to shunt noise caused by a parasitic coupling between the magnetic field sensing element and the current carrying conductor away from the magnetic field sensing element.
G01R 15/14 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
76.
DUAL SEMICONDUCTOR DIE CURRENT SENSOR INTEGRATED CIRCUIT
A current sensor IC includes a lead frame having a first surface, a second opposite surface and including a primary conductor and signal leads. A first semiconductor die has a first surface adjacent to the first surface of the lead frame and supporting a first magnetic field sensing element and a second semiconductor die has a first surface adjacent to the second surface of the lead frame and a second opposite surface supporting a second magnetic field sensing element. Fabrication methods include a single mold method and a two-mold method in which a mold material can provide isolation between the first semiconductor die and the primary conductor. Also described is a current sensor IC in which both first and second semiconductor die are arranged in a flip-chip configuration. Diagnostic circuits and inter-die connections permit one semiconductor die to sense faults with the other semiconductor die.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A semiconductor package, comprising: a substrate; an analog circuitry that is formed on the substrate; a first heating element that is formed on the substrate; a first temperature sensing element that is formed on the substrate; a first heating control circuitry that is formed on the substrate, the first heating control circuitry being configured to detect whether a first temperature measurement that is taken with the first temperature sensing element is below a first threshold, and turn on the first heating element in response to detecting that the first temperature measurement is below the first threshold, the first heating element being turned on only when the first temperature measurement is below the first threshold; and an encapsulating material configured to encapsulate the substrate, the analog circuitry, the first temperature sensing element, the first heating element, and the first heating control circuitry.
H05B 3/18 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
G01K 1/02 - Means for indicating or recording specially adapted for thermometers
G01K 3/00 - Thermometers giving results other than momentary value of temperature
G05D 23/20 - Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
A buffer includes a first branch to receive a digital input signal and generate a first intermediate signal having falling edges that are delayed and faster than rising edges of the digital input signal and rising edges that are substantially coincident with falling edges of the digital input signal and a second branch to receive the digital input signal and generate a second intermediate signal having rising edges that are delayed and faster than falling edges of the digital input signal and falling edges that are substantially coincident with rising edges of the digital input signal. An output stage has a first input to receive the first intermediate signal, a second input to receive the second intermediate signal, and an output at which a buffer output signal is provided as a delayed version of the digital input signal having faster rising and falling edges than the digital input signal.
H03K 19/003 - Modifications for increasing the reliability
H03K 5/134 - Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active-delay devices with field-effect transistors
A system, comprising: a conductor having a pair of primary surfaces, the conductor including a through-hole formed therein, the conductor including a first notch that is formed adjacent to the through-hole; and a printed circuit board that is inserted in the through-hole, the printed circuit board having a current sensor mounted thereon, the current sensor being disposed inside the through-hole, the current sensor including a first magnetic field sensing element and a second magnetic field sensing element having respective axes of maximum sensitivity that are substantially perpendicular to the primary surfaces of the conductor.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof
In one aspect, a bridge includes at least eight sets of sub-arrays. Each one of the at least eight sets of sub-arrays forms a corresponding one magnetoresistance element. Each one of the at least eight sets of sub-arrays has a reference direction. The at least eight sets of sub-arrays are arranged in a matrix on a die. A reference direction of each one of the at least eight sets of sub-arrays is different from a reference direction of at least one other of the at least eight sets of sub-arrays.
A method comprising: transmitting a data block that is part of a message, the data block including a plurality of data block symbols; detecting a duration of an end portion of the message, the duration being detected based on a difference between: (i) a time that is allotted for transmitting the message and (ii) a time needed for transmitting the data block as well as any other element of the message that precedes the end portion; and transmitting one or more auxiliary data symbols as part of the end portion of the message, wherein the end portion has a flexible duration that is selected to synchronize a total duration of the message to the time that is allotted for transmitting the message, and wherein each of the data block symbols and each of the auxiliary data symbols is encoded by using pulse-width modulation (PWM).
H03K 9/08 - Demodulating pulses which have been modulated with a continuously-variable signal of duration- or width-modulated pulses
H04L 7/04 - Speed or phase control by synchronisation signals
H04L 25/49 - Transmitting circuitsReceiving circuits using code conversion at the transmitterTransmitting circuitsReceiving circuits using predistortionTransmitting circuitsReceiving circuits using insertion of idle bits for obtaining a desired frequency spectrumTransmitting circuitsReceiving circuits using three or more amplitude levels
Split-detector lidar photoreceivers are described which utilize range-dependent focus to transition from illuminating two detector elements with returns from near targets, within a close-range threshold distance, to illuminating just one detector element for all other returns. In some examples, a split-detector can have or include a “bullseye” (concentric) detector configuration. Because two separate detector elements with separate amplifier chains are used, one channel can be optimized for the strong to and near-target returns, while another channel can be optimized and used for all other returns.
According to one aspect of the disclosure, a method includes: receiving, by a magnetic field sensor, first and second magnetic field signals responsive to motion of a target; generating first and second digital pulse signals responsive to the first and second magnetic field signals, respectively; calculating a first time between a pulse edge of the first digital pulse signal and a next pulse edge of the second digital pulse signal; calculating a second time between two different pulse edges of the first digital pulse signal or two different pulse edges of the second digital pulse signal; calculating, using the calculated first and second times, a phase shift between the first and second magnetic field signals; and generating, using the calculated phase shift, a third magnetic field signal having a predetermined phase shift from the first magnetic field signal or from the first magnetic field signal.
G01D 5/14 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
An apparatus, comprising: a first transmitting coil including at least one first portion and at least one second portion, the first and second portions having different polarities; and a second transmitting coil that is disposed above or below the first transmitting coil, the second transmitting coil including at least one third portion and at least one fourth portion, the third and fourth portions having different polarities, wherein the first and second transmitting coils are configured so that, when the first transmitting coil is not driven and the second transmitting coil is driven, a net magnetic flux through at least one of the first portions is approximately zero, the net magnetic flux being a magnetic flux that is entirely attributable to the second transmitting coil.
H02J 50/80 - Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
A system is provided comprising: a first target including a plurality of first teeth; and a second target that is coupled to the first target via a mechanical link, the second target including a plurality of second teeth, the second target being disposed above or below the first target, the plurality of first teeth including a different number of teeth than the plurality of second teeth, wherein the first target and the second target are configured to generate respective magnetic fields in response to one or more excitation magnetic fields, the respective magnetic fields being usable to measure a twisting force that is incident on the mechanical link that couples the first target to the second target.
G01D 5/20 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying inductance, e.g. by a movable armature
G01D 3/02 - Measuring arrangements with provision for the special purposes referred to in the subgroups of this group with provision for altering or correcting the transfer function
86.
SENSOR INTEGRATED CIRCUIT WITH CURRENT OUTPUT CALIBRATION
A sensor integrated circuit configured to generate a sensor output current indicative of a sensed parameter includes a power connection to receive a supply voltage, a ground connection, a sensing circuit configured to generate a parameter current proportional to the sensed parameter, and an output connection at which the sensor output current is provided. An output current calibration circuit is configured to determine an offset current that corresponds to a bias voltage at the output connection equal to a fixed percentage of the supply voltage when the parameter current is substantially zero. The sensor output current is provided as a combination of the parameter current and the offset current.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
A system is provided comprising: a first target including a plurality of first teeth; and a second target that is coupled to the first target via a mechanical link, the second target including a plurality of second teeth, the second target being disposed above or below the first target, the plurality of first teeth including a different number of teeth than the plurality of second teeth, wherein the first target and the second target are configured to generate respective magnetic fields in response to one or more excitation magnetic fields, the respective magnetic fields being usable to measure a twisting force that is incident on the mechanical link that couples the first target to the second target.
G01B 7/00 - Measuring arrangements characterised by the use of electric or magnetic techniques
G01B 7/30 - Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapersMeasuring arrangements characterised by the use of electric or magnetic techniques for testing the alignment of axes
In one aspect, a magnetic-field biosensor includes an insulator and a plurality of magnetic-field sensing elements that includes a first and a second magnetic-field sensing elements. The insulator has a first and a second plurality of portions, and the second plurality of portions is thicker than the first plurality of portions. The magnetic-field biosensor further includes a first receptor configured to attach to biological material and being on a first portion of the first plurality of portions and directly above the first magnetic-field sensing element; and a second receptor configured to attach to the biological material and being on a first portion of the second plurality of portions and directly above the second magnetic-field sensing element. Outputs of the first and the second magnetic-field sensing elements are used to sense a magnetic field from a first magnetic nanoparticle by reducing an effect of an applied magnetic field.
G01N 33/543 - ImmunoassayBiospecific binding assayMaterials therefor with an insoluble carrier for immobilising immunochemicals
B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers
G01N 27/74 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables of fluids
G01R 33/12 - Measuring magnetic properties of articles or specimens of solids or fluids
A system, comprising: a processing circuitry that is configured to: receive a signal S1 and a signal S2, the signal S1 being generated by a first receiving coil in response to a first magnetic field, the signal S2 being generated by a second receiving coil in response to the first magnetic field, receive a signal S3 and a signal S4, the signal S3 being generated by a third receiving coil in response to a second magnetic field, the signal S4 being generated by a fourth receiving coil in response to the second magnetic field; calculate a first electrical angle based on signals S1 and S2; calculate a second electrical angle based on signals S3 and S4; and generate an output signal based on the first and second electrical angles.
G01D 5/20 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying inductance, e.g. by a movable armature
Aspects of the present disclosure include systems, structures, circuits, and methods providing pin-coupled transformers and/or pin-coupled coil structures. A pin-coupled coil structure can include first and second substrates, each having a plurality of conductive traces. The conductive traces of the substrates are connected by conductive pins, forming one or more pin-coupled coil structures. Two pin-coupled coils structure can be configured around a transformer core forming a pin-coupled transformer structure. The pin-coupled transformer structure can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
91.
VOLTAGE-ISOLATED INTEGRATED CIRCUIT PACKAGES WITH PLANAR TRANSFORMERS
Aspects of the present disclosure include systems, structures, circuits, and methods providing planar transformers and planar transformer structures. The planar transformers and transformer structures can include first and second core layers of soft ferromagnetic material on opposite sides of an electrical substrate. First and second coils can be configured as conductive traces disposed on the opposite sides of the substrate. The first and second soft ferromagnetic layers are in contact in a contact region. One or more holes are disposed in either or both of the soft ferromagnetic layers and contain soft ferromagnetic material to reduce reluctance of the transformer structure. The planar transformer can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a gate driver or other high voltage circuit.
H01F 41/24 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
H01F 41/26 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids using electric currents
92.
MAGNETIC FIELD CURRENT SENSOR TO REDUCE STRAY MAGNETIC FIELDS
A magnetic field current sensor comprising: a conductor; magnetic field sensing elements including a first magnetic field sensing element generating a first signal, a second magnetic field sensing element generating a second signal, a third magnetic field sensing element generating a third signal, and a fourth magnetic field sensing element generating a fourth signal; circuitry that generates a difference signal indicative of twice the second signal less the first signal and less the fourth signal, wherein the second magnetic field sensing element is interleaved with the third magnetic field sensing element, wherein the second signal and the third signal are substantially equal, and wherein a distance between the first magnetic field sensing element and the second magnetic field sensing element is equal to a distance between the second magnetic field sensing element and the fourth magnetic field sensing element.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
93.
SENSOR INTERFACE WITH TEMPERATURE SIGNAL PROCESSING
A sensor interface includes a signal path configured to receive a sensing element output signal from a sensing element and to generate an interface output signal indicative of a parameter sensed by the sensing element, an NTC interface and a diode interface. The NTC interface is configured to be coupled to an NTC element having a non-linear resistance over temperature and to generate an NTC signal indicative of a linearized version of the non-linear resistance of the NTC element and the diode interface configured to be coupled to a diode and to generate a diode signal indicative of an absolute temperature.
G01K 7/25 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a non-linear resistance, e.g. thermistor in a specially-adapted circuit, e.g. bridge circuit for modifying the output characteristic, e.g. linearising
A magnetic field speed sensor includes one or more magnetic field sensing elements to generate a magnetic field signal indicative of a magnetic field associated with a moveable target and a controller to generate a controller output signal including a plurality of output words, each including a speed pulse and a plurality of data pulses capable of having four different amplitudes. The time between the speed pulses of consecutive output words is indicative of the speed of movement of the target. Each data pulse corresponds to a data bit having a binary value represented by a transition direction of the data pulse and the amplitude of the data pulse. Features include a programmable data pulse width or an adaptively adjustable data pulse width to avoid truncation.
G01P 3/487 - Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals delivered by rotating magnets
A system, comprising: a power switch; a controller; a transformer having a primary winding and a secondary winding; a first control interface that is coupled between the controller and the primary winding, the first control interface being arranged to: (i) detect an electrical current through the primary winding and (ii) output a fault signal to the controller in response to detecting that the electrical current through the primary winding has crossed a threshold; and a second control interface that is coupled between the secondary winding and the power switch, the second control interface being configured to: (i) provide an electrical current received from the transformer to the power switch, (ii) detect whether an error is present in the operational conditions of the power switch, and (iii) in response to detecting the error, change a level of an electrical current through the secondary winding.
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
Aspects of the present disclosure include systems, structures, circuits, and methods providing integrated circuit (IC) packages or modules having a transformer with first and second spiral coils disposed on or adjacent to a substrate, each including one or more coil portions on one or multiple levels and having varying distances to an aperture or coil-origin region. A portion of a soft ferromagnetic core of the transformer can pass through the aperture or be adjacent to the coil origin region. The IC packages and modules may include various types of circuits; in some examples, IC packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01F 41/04 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets for manufacturing coils
Aspects of the present disclosure include systems, structures, circuits, and methods providing integrated circuit (IC) packages (500) or modules having a transformer (520) with first and second spiral coils (504, 506) disposed on or adjacent to a substrate (502), each including one or more coil portions on one or multiple levels and having varying distances to an aperture or coil-origin region. A portion (512c) of a soft ferromagnetic core (512) of the transformer can pass through the aperture (A) or be adjacent to the coil origin region (A). The IC packages and modules may include various types of circuits; in some examples, IC packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventor
Campiglio, Paolo
Nguyen Ba, Doan
Rioult, Maxime
Solignac, Aurélie
Daga, Jean-Michel
Abstract
In one aspect, a method includes manufacturing a tunneling magnetoresistance (TMR) element to sense out-of-plane changes in magnetic field intensity in a magnetic field. The manufacturing includes depositing a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction. A top layer of the plurality of antiferromagnetic layers has a magnetization direction in the first direction. The manufacturing also includes depositing a ferromagnetic layer directly on the top layer; depositing a first multilayer structure directly on the ferromagnetic layer; depositing a metal layer directly on the first multilayer structure; and depositing a second multilayer structure directly on the metal layer. The ferromagnetic layer, the first multilayer structure, and the second multilayer structure are each parallel to an x-y plane and the first direction is either in a z-direction or in a -z direction.
According to one aspect of the present disclosure, a magnetoresistance (MR) element includes a free layer. In some embodiments, the free layer also includes a vortex layer comprising a vortex and a skyrmion layer magnetically coupled to the vortex layer. In some embodiments, in the skyrmion layer is configured to form skyrmions that reduce annihilation of the vortex thereby increasing a linear response range of the MR element. In some embodiments, the MR element is a tunneling magnetoresistance element or a giant magnetoresistance element. In some embodiments, the MR element includes a barrier layer, wherein the vortex layer is closer to the barrier layer than the skyrmion layer.
Commissariat à l'énergie atomique et aux énergies alternatives (France)
Inventor
Campiglio, Paolo
Nguyen Ba, Doan
Rioult, Maxime
Solignac, Aurélie
Daga, Jean-Michel
Abstract
In one aspect, a method includes manufacturing a tunneling magnetoresistance (TMR) element to sense out-of-plane changes in magnetic field intensity in a magnetic field. The manufacturing includes depositing a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction. A top layer of the plurality of antiferromagnetic layers has a magnetization direction in the first direction. The manufacturing also includes depositing a ferromagnetic layer directly on the top layer; depositing a first multilayer structure directly on the ferromagnetic layer; depositing a metal layer directly on the first multilayer structure; and depositing a second multilayer structure directly on the metal layer. The ferromagnetic layer, the first multilayer structure, and the second multilayer structure are each parallel to an x-y plane and the first direction is either in a z-direction or in a −z direction.
