A current sensor integrated circuit package includes a primary conductor having an input portion into which a current flows and an output portion from which the current flows, a plurality of secondary leads, and a semiconductor die disposed adjacent to a top surface of the primary conductor and positioned on an insulator portion. In some embodiments, at least one magnetic field sensing element is supported by the semiconductor die. In some embodiments, the package includes a package body with a first portion enclosing the semiconductor die and a first portion of the primary conductor and a second portion enclosing an elongated portion of the plurality of secondary leads, wherein a second portion of the primary conductor is exposed. A pad is secured to the package body and a pillar extends from the primary conductor to the pad.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
H10N 59/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comportant au moins un élément galvanomagnétique ou à effet Hall couvert par les groupes
2.
CORE-BASED CURRENT SENSORS WITH INTEGRATED COMPENSATION COILS
Systems, circuits, and methods provide core-based closed-loop current sensors utilizing a coil connected to an IC having a magnetic field sensor configured to measure current in one or more conductors such as busbars. A closed-loop current sensor includes a magnetic core having first and second ends separated by a gap and an aperture receiving the one or more conductors; a magnetic field sensor disposed on a substrate and integrated in an IC is disposed in the gap, where the magnetic field sensor is configured to receive magnetic flux from the gap, where the IC is configured to measure AC current in the one or more conductors; and a coil integrated with the substrate and coupled to the IC, wherein the coil is configured to provide negative magnetic feedback for closed-loop compensation.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 3/00 - Appareils ou procédés spécialement adaptés à la fabrication des appareils de mesure
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
3.
ISOLATED GATE DRIVER IC HAVING HETEROGENOUS ASIL COMMUNICATION
Methods and apparatus for heterogenous ASIL communication in an isolated gate driver. In embodiments, a gate driver includes an internal or external transformer to provide power and/or data communication from a primary side to a second side through an isolation barrier. One or more capacitive channels provide communication between the primary and secondary sides. By providing independent isolated channels of differing types, heterogenous ASIL functionality is provided.
Systems, circuits, and methods provide heat-sink-coupled conductive structures having eddy current mitigation structures, formed as S-notches, and integrated current sensors. An example conductive structure includes a high-current conductor structure having a main current path including an S-notch portion configured to mitigate eddy currents. The structure includes a low-current conductor structure connected to a first heat sink and having a main current path configured to conduct a second current. A differential current sensor is connected to the low-current conductor structure and configured to detect current flowing in the high-current conductor structure. A power module includes the conductive structure and a power converter that is configured to convert power between the first current in the high-current conductor structure and the second current in the low-current conductor structure. The conductive structures and power modules can be used for EV applications.
H02M 1/00 - Détails d'appareils pour transformation
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/10 - Mesure d'une somme, d'une différence, ou d'un rapport
According to one aspect of the disclosure, a sensor includes a substrate; a back bias magnet arranged to generate a bias field at least having components in a plane parallel to a surface of the substrate, the bias field having a horizontal symmetry axis within the plane; and a plurality of sensing element groups disposed at different locations on a surface of the substrate and laid out along a common line aligned with the horizontal symmetry axis of the back bias magnet, each of the plurality of sensing element groups having one or more tunneling magnetoresistance (TMR) vortices having an axis of maximum sensitivity aligned with the common line.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Isolation transformer packages and structures and related methods reduce or minimize deleterious effects arising from magnetostriction during operation of the included transformer. An example transformer based integrated circuit package includes a substrate including a cavity, with the cavity including an aperture. A magnetic core is disposed in the cavity, with the magnetic core includes a soft ferromagnetic material. The cavity is configured to provide a space between an interior surface of the cavity and an exterior surface of the magnetic core. A cap is disposed in the aperture and configured to seal the aperture. A plurality of conductive traces forming first and second coils is disposed about the magnetic core, with the first and second coils and magnetic core forming a transformer.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
H01L 23/04 - ConteneursScellements caractérisés par la forme
H01L 23/06 - ConteneursScellements caractérisés par le matériau du conteneur ou par ses propriétés électriques
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
7.
HYBRID GaN AND BCD DEVICES USING HETEROEPITAXY ON SILICON
According to one aspect of the present disclosure, a semiconductor device includes a first substrate having a lattice structure, wherein the first substrate includes a gallium nitride (GaN) area adjacent to a bipolar junction transistor (BJT) complementary metal oxide semiconductor (CMOS) double diffused metal oxide semiconductor (DMOS) (BCD) area. In some embodiments, the GaN area comprises one or more GaN device layers disposed on the first substrate. In some embodiments, the BCD area comprises one or more BCD device layers. In some embodiments, the first substrate comprises a silicon (100) lattice structure configuration. In some embodiments, the GaN devices layers comprise one or more GaN device layers having a cubic structure and one or more GaN device layers having a wurtzite structure.
H01L 29/20 - Corps semi-conducteurs caractérisés par les matériaux dont ils sont constitués comprenant, à part les matériaux de dopage ou autres impuretés, uniquement des composés AIIIBV
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins
H01L 29/66 - Types de dispositifs semi-conducteurs
A current sensor integrated circuit (IC) package includes an insulation structure disposed between a semiconductor die and a lead frame to control gap height and prevent the die from tilting and dropping the magnetic field coupling between the die the primary conductor. An insulation structure is disposed between the die and the lead frame such that the die remains level and magnetic coupling remains intact. An insulation structure may control the gap height between the lead frame and the die evenly during transfer molding, by supporting the die across its length and/or width. Epoxy dots are also or instead used to control the gap height and eliminate die tilt.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
9.
ELECTROSTATIC DISCHARGE PROTECTION FOR STACK DIE TECHNOLOGY
According to one aspect of the present disclosure, a semiconductor electrostatic discharge (ESD) device includes a substrate. In some embodiments one or more dielectric layers disposed on the substrate. In some embodiments, there are one or more polysilicon diodes disposed within the one or more dielectric layers. In some embodiments, there is a metallization layer with two or more metal interconnect pads. In some embodiments, there are two or more vias, wherein a first via is connected to a first metal interconnect pad and a second via is connected to a second metal interconnect pad, wherein the polysilicon diodes are connected to the two or more vias, wherein the one or more polysilicon diodes are configured to provide ESD protection at the metal interconnect pads.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type
10.
CLOSED LOOP MAGNETIC FIELD SENSOR WITH CURRENT CONTROL
Method and apparatus for a closed loop CAPS magnetic field sensor having an emitter coil current that corresponds to a distance from a target. An emitter coil drive circuit outputs an emitter current to an emitter coil for generating an emitter field and a reference coil drive circuit outputs a reference current to a reference coil for generating a reference field. The combined fields generate an applied field and a magnetic field sensing element generates an electric signal. The sensor has a closed loop configuration with a feedback path that includes the emitter coil drive circuit and the emitter coil and is configured to modify an amplitude of the emitter current signal based on a distance from the target to the magnetic field sensing element.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
11.
TRANSFORMER PACKAGES HAVING CORE COVERS WITH COIL PORTIONS
Systems, structures, packages, circuits, and methods provide transformer packages with transformers having core covers with coil portions. A first plurality of conductive traces in a substrate forms first portions of first and second transformer coils. A core cover includes a second plurality of conductive traces forming second portions of the transformer coils and configured to extend around a portion of a provided magnetic core. The core covers are configured such that first (primary) and second (secondary) transformer coils are formed when the second plurality of conductive traces is brought into contact with the first plurality of conductive traces. One or more integrated circuits may be included with transformer packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
12.
TRANSFORMER-BASED INTEGRATED CIRCUIT PACKAGES HAVING FRACTIONAL COIL STRUCTURES
Systems, structures, packages, circuits, and methods provide transformers (120; 350; 620) having fractional coil structures. A first plurality of conductive traces (104; 311; 604) in a substrate (101; 301; 601) forms first portions of first and second transformer coils (111a, 111b; 351a, 351b; 611a, 611b). Two or more fractional coil structures (108; 330; 630) are provided, with each including a second plurality of conductive traces forming second portions of the transformer coils and configured to extend around a portion of a provided magnetic core (106; 320; 606). The fractional coil structures are configured such that first (primary) and second (secondary) transformer coils are formed when the second plurality of conductive traces is brought into contact with the first plurality of conductive traces. A transformer having one or more fractional coil structures can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 27/30 - Fixation ou serrage de bobines, d'enroulements ou de parties de ceux-ci entre euxFixation ou montage des bobines ou enroulements sur le noyau, dans l'enveloppe ou sur un autre support
13.
TRANSFORMER-BASED INTEGRATED CIRCUIT PACKAGES HAVING FRACTIONAL COIL STRUCTURES
Systems, structures, packages, circuits, and methods provide transformers having fractional coil structures. A first plurality of conductive traces in a substrate forms first portions of first and second transformer coils. Two or more fractional coil structures are provided, with each including a second plurality of conductive traces forming second portions of the transformer coils and configured to extend around a portion of a provided magnetic core. The fractional coil structures are configured such that first (primary) and second (secondary) transformer coils are formed when the second plurality of conductive traces is brought into contact with the first plurality of conductive traces. A transformer having one or more fractional coil structures can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
H01F 1/06 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs métaux ou alliages sous forme de particules, p. ex. de poudre
H01F 1/10 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques durs substances non métalliques, p. ex. ferrites
H01F 1/34 - Aimants ou corps magnétiques, caractérisés par les matériaux magnétiques appropriésEmploi de matériaux spécifiés pour leurs propriétés magnétiques en matériaux inorganiques caractérisés par leur coercivité en matériaux magnétiques doux substances non métalliques, p. ex. ferrites
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H05K 1/18 - Circuits imprimés associés structurellement à des composants électriques non imprimés
14.
MAGNETORESISTANCE ELEMENT INCLUDING A MULTI-LAYERED FREE LAYER STACK TO TUNE HYSTERESIS AND OUTPUT AMPLITUDE
According to one aspect of the present disclosure, a magnetic field sensor includes a magnetoresistance (MR) element. In some embodiments, the MR element includes a reference layer, a free layer, and a barrier layer. In some embodiments the free layer includes two or more cobalt iron boron (CoFeB) layers, wherein a first one of the CoFeB layers is in contact with the barrier layer, and two or more spacer layers. In some embodiments, the CoFeB layers and the spacer layers alternate to form a multilayered free layer structure. In some embodiments, the magnetic field sensor comprises an angle sensor or a current sensor. In some embodiments, the contact between the first one of the CoFeB layers and the barrier layer is configured to reduce hysteresis in the MR element. In some embodiments, the alternating CoFeB layers and spacer layers are configured to increase output amplitude of the MR element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
An integrated circuit package having more than one semiconductor die includes a spark gap to provide a current path designed to protect the device. The spark gap can be provided between an exposed portion of a corner lead and an exposed portion of a tie bar and/or between exposed portions of adjacent leads. The spark gap distance is designed to achieve required ratings for a given application. Stacked and side-by-side die configurations are described.
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
16.
INTEGRATED CIRCUIT PIN FOR REFERENCE VOLTAGE AND FAULT COMMUNICATION
A sensor integrated circuit includes a sensing circuit configured to generate the sensor output signal and a fault circuit to detect a fault and generate a fault signal indicative of the fault. A combined signal indicative of the fault signal when a fault is detected and indicative of a reference voltage associated with the sensor IC at other times is provided at a shared connection of the sensor IC. Embodiments include a current sensor IC and fault detectors configured to detect one or more faults.
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
H02H 3/08 - Circuits de protection de sécurité pour déconnexion automatique due directement à un changement indésirable des conditions électriques normales de travail avec ou sans reconnexion sensibles à une surcharge
17.
LOW-POWER MAGNETIC SENSING DEVICE AND MAGNETIC SWITCH DEVICE COMPRISING THE MAGNETIC SENSING DEVICE
Magnetic sensing device integrated in a magnetic switch device that makes or breaks contact in the presence of an external magnetic field, comprising: a first transistor biased at a first terminal by a first bias voltage and a first magnetoresistive element having a first resistance variable with the external magnetic field. At a reference field strength, the first resistance has a first reference resistance value, and the first bias voltage is adjustable to control a first current at the second terminal of the first transistor at a first reference current value. When the external magnetic field is varied around the reference field strength, the first variable resistance varies around the first reference resistance value by a resistance delta, such that the first current modulates around the first reference current value by a current delta. A magnetic switch device comprising the magnetic sensing device is also disclosed.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/06 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
An integrated circuit (IC) package and assembly includes a stacked arrangement of one or more IC die to leverage additional functionality in a standard package width. Active IC die and high voltage IC capacitors may be stacked in various arrangements to minimize the footprint and width of the IC package. The die are interconnected with each other and a lead frame with wire bonds, silicon vias or other interconnections. Various bond pad configurations are used to interconnect the die. The stacked arrangement of the IC die reduces the width of the supporting lead frame and reduces the overall footprint of the IC package.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
H01L 25/00 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
According to aspects of the disclosure, a method is provided for use in a sensor, the method comprising: detecting that a frequency of a first signal is in a first range, the first signal being generated, at least in part, by one or more first magnetic field sensing elements, the first signal being generated in response to a magnetic field that is associated with a rotating target, the rotating target including a plurality of pole pairs; identifying a first resolution that corresponds to the first range and causing the first resolution to become a current resolution of the sensor; and transmitting a data stream in accordance with the current resolution of the sensor, wherein transmitting the data stream includes: (i) transmitting a plurality of speed pulses that encode a speed of the rotating target, and (ii) transmitting a plurality of data pulse sets.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01P 3/487 - Dispositifs caractérisés par l'utilisation de moyens électriques ou magnétiques pour mesurer la vitesse angulaire en mesurant la fréquence du courant ou de la tension engendrés de signaux ayant la forme d'impulsions délivrés par des aimants rotatifs
An integrated circuit (IC) regulator includes a pass element and a buffer. The pass element has an input terminal coupled to the regulator input, an output terminal coupled to the regulator output, and a control terminal and the buffer has an output coupled to the regulator output. A pass element current between the input terminal and output terminal is independent of the load current associated with a functional circuit of the IC and the buffer is configured to shunt any portion of the pass element current that is greater than the load current.
G05F 1/56 - Régulation de la tension ou de l'intensité là où la variable effectivement régulée par le dispositif de réglage final est du type continu utilisant des dispositifs à semi-conducteurs en série avec la charge comme dispositifs de réglage final
According to one aspect of the disclosure, a sensor for detecting speed of a target includes: one or more of magnetic field sensing elements operable to generate one or more magnetic field signals indicative of a magnetic field associated with the target having a speed; detection circuitry configured to detect one or more parameters of the target using the magnetic field signals or representations thereof; and an output circuit configured to generate a sensor output signal conveying information about the one or more parameters of the target at a fixed time interval independent of the target speed.
H04L 25/49 - Circuits d'émissionCircuits de réception à conversion de code au transmetteurCircuits d'émissionCircuits de réception à pré-distorsionCircuits d'émissionCircuits de réception à insertion d'intervalles morts pour obtenir un spectre de fréquence désiréCircuits d'émissionCircuits de réception à au moins trois niveaux d'amplitude
G01P 3/487 - Dispositifs caractérisés par l'utilisation de moyens électriques ou magnétiques pour mesurer la vitesse angulaire en mesurant la fréquence du courant ou de la tension engendrés de signaux ayant la forme d'impulsions délivrés par des aimants rotatifs
H03M 5/12 - Code à niveau biphasé, p. ex. code à décalage de phase, code ManchesterCode espace-marque biphasé, p. ex. code à double fréquence
22.
LOW-POWER MAGNETIC SENSING DEVICE AND MAGNETIC SWITCH DEVICE COMPRISING THE MAGNETIC SENSING DEVICE
Magnetic sensing device integrated in a magnetic switch device that makes or breaks contact in the presence of an external magnetic field, comprising: a first transistor biased at a first terminal by a first bias voltage and a first magnetoresistive element having a first resistance variable with the external magnetic field. At a reference field strength, the first resistance has a first reference resistance value, and the first bias voltage is adjustable to control a first current at the second terminal of the first transistor at a first reference current value. When the external magnetic field is varied around the reference field strength, the first variable resistance varies around the first reference resistance value by a resistance delta, such that the first current modulates around the first reference current value by a current delta. A magnetic switch device comprising the magnetic sensing device is also disclosed.
H03K 17/95 - Commutateurs de proximité utilisant un détecteur magnétique
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
23.
COMPENSATION MECHANISM FOR EXTENDED LINEARITY OF MAGNETIC FIELD SENSORS
A device, comprising: a magnetic field sensor including: (i) one or more first magnetic field sensing elements arranged to produce a first magnetic field signal in response to a magnetic field, (ii) a programmable gain amplifier (PGA) that is configured to amplify the first magnetic field signal to produce an amplified signal, and (iii) a first circuitry that is configured to generate an output signal based on the amplified signal; and a compensation circuit including: (i) one or more second magnetic field sensing elements that are arranged to produce a second magnetic field signal in response to the magnetic field, and (ii) a second circuitry that is configured to adjust a gain of the PGA based on the second magnetic field signal, thereby causing a gain of the PGA to be increased or decreased based on the magnetic field at one or more second magnetic field sensing elements.
A magnetic field sensor includes magnetoresistance elements supported by a surface of the die defining a plane, and a concentrator layer over the surface of the die and having an aperture. A first magnetoresistance element is adjacent to a first edge of the aperture and has a first reference direction parallel to the surface of the die and substantially perpendicular to the first aperture edge and a second magnetoresistance element is adjacent to a second edge of the aperture and has the first reference direction. The concentrator layer redirects the applied magnetic field to present a differential field parallel to the plane of the die to the magnetoresistance elements in response to applied field perpendicular to the plane of the die and to present a reduced magnitude and common mode field to the magnetoresistance elements in response to the applied field parallel to the plane of the die.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
25.
ANALOG MAGNETIC SENSOR DEVICE FOR MEASURING THE ORIENTATION OF AN EXTERNAL MAGNETIC FIELD
A two-dimensional analog angular magnetic sensor device for measuring an orientation of an external magnetic field, comprising at least a magnetic sensor, comprising a plurality of tunnel magnetoresistance (TMR) elements arranged in a full-bridge configuration and configured to provide a sine output voltage: VSIN=A·sin θ·Vdd, or configured to provide a cosine output voltage VCOS=A·cos θ·Vdd, wherein A is parameter depending on the TMR ratio of the TMR element and Vdd is a bias voltage inputted to the magnetic sensor. The magnetic sensor device further comprises an analog circuit configured to generates a circuit output voltage and electrically connected to the magnetic sensor such as that the magnetic sensor device generates a device output voltage that follows one of: a tangent output voltage VTAN:Vout=K·Vdd·VTAN=K·Vdd·tan θ, where K is a constant; or a cotangent output voltage (VCOTAN):
A two-dimensional analog angular magnetic sensor device for measuring an orientation of an external magnetic field, comprising at least a magnetic sensor, comprising a plurality of tunnel magnetoresistance (TMR) elements arranged in a full-bridge configuration and configured to provide a sine output voltage: VSIN=A·sin θ·Vdd, or configured to provide a cosine output voltage VCOS=A·cos θ·Vdd, wherein A is parameter depending on the TMR ratio of the TMR element and Vdd is a bias voltage inputted to the magnetic sensor. The magnetic sensor device further comprises an analog circuit configured to generates a circuit output voltage and electrically connected to the magnetic sensor such as that the magnetic sensor device generates a device output voltage that follows one of: a tangent output voltage VTAN:Vout=K·Vdd·VTAN=K·Vdd·tan θ, where K is a constant; or a cotangent output voltage (VCOTAN):
V
out
=
K
·
V
dd
·
V
COTAN
=
K
·
V
dd
·
cotan
θ
.
G01R 33/24 - Dispositions ou appareils pour la mesure des grandeurs magnétiques faisant intervenir la résonance magnétique pour la mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
26.
TRANSFORMER PACKAGES WITH MAGNETIC CORE SUSPENSION
According to one aspect of the present disclosure, a transformer based integrated circuit (IC) package includes a portion including a recess. In some embodiments, a magnetic core disposed in the recess, wherein the recess is configured to provide a space between an interior surface of the recess and an exterior surface of the magnetic core, wherein the magnetic core includes a soft ferromagnetic material. In some embodiments, two or more support structures disposed in the recess and connected to the magnetic core and package portion. In some embodiments, a plurality of conductive traces forming first and second coils disposed about the magnetic core, wherein the first and second coils and magnetic core are configured as a transformer. In some embodiments, a molding material is configured to encapsulate a surface of the package portion and the transformer, wherein the molding material is configured to form a package body.
H01F 27/38 - Organes de noyaux auxiliairesBobines ou enroulements auxiliaires
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Method and apparatus for trimming IC components. In an embodiment, a circuit includes a digital controller, a first programmable read only memory coupled to the controller, and a trimmable block having at least one trimmable component. A second programmable read only memory is coupled to the trimmable block, where the second programmable read only memory is independent of the first programmable read only memory.
A power source connection monitor in redundant power systems determines if valid connections are present to a positive and/or negative terminal of each of the power sources. A current detection integrated circuit serves as an internal tie between redundant control units creating an internal power source bus for each connection between the redundant external connections to each power source. The current detection integrated circuit monitors the current in the internal power source bus interconnections to determine its presence and direction. The current detection integrated circuit signals the control units of failing or failed connections to one or more of the power sources.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
30.
INDUCTIVE LINEAR STROKE SENSOR USING DUAL TRACKS WITH DIFFERENT PERIODICITY
A system including: a target having a first track and a second track, a first receiving coil that is aligned with the first track, the first receiving coil having a first period length; a second receiving coil that is aligned with the first track the second receiving coil having a second period length; a third receiving coil that is aligned with the second track the third receiving coil having a third period length; and a fourth receiving coil that is aligned with the second track, the fourth receiving coil having a first period length; and a magnetic field sensor that is configured to generate an output signal that is indicative of a position of the target, wherein the respective target length is less than any of the first period length, the second period length, the third period length, and the fourth period length.
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
Variable magnetic coupling touch sensors are described which have a deformable layer with ferromagnetic material distributed throughout its volume, and one or more magnetic field sensing elements that can detect changes in a magnetic field due to deformation of the deformable layer. The ferromagnetic material can include soft ferromagnetic material in some embodiments. The ferromagnetic material can include hard ferromagnetic material in some embodiments. In some embodiments, e.g., ones having soft ferromagnetic material(s), one or more transmitting elements/antennas, e.g., coils, may be utilized to produce an applied magnetic field. Monitoring circuitry can detect changes in a magnetic field or magnetic coupling due to deformation of the deformable layer and produce a corresponding output signal indicative of the deformation of the deformable layer. Magnitude, direction, and/or location of the force or pressure causing the deformation can be determined from the output signal.
Aspects of the present disclosure include systems, structures, circuits, and methods providing voltage-isolation transformers having substrate extensions for the transformer core. First and second substrates are configured about a magnetic core and first and second transformer coils. The first substrate can have a recess for receiving the magnetic core. The second substrate can include a protruding member designed to fit within an aperture of the core to facilitate placement or centering of the core. The second substrate is disposed to cover the recess of the first substrate. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H05K 1/03 - Emploi de matériaux pour réaliser le substrat
H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés
H05K 1/16 - Circuits imprimés comprenant des composants électriques imprimés incorporés, p. ex. une résistance, un condensateur, une inductance imprimés
33.
LAMINATED SUBSTRATE PACKAGES CONFIGURED FOR COUPLING TO ISOLATION TRANSFORMERS
Systems, structures, packages, circuits, and methods provide IC packages with laminated substrates configured for use with or coupling to a transformer package or assembly. IC packages can include a substrate having an encapsulant presenting an encapsulating volume for encapsulation of one or more IC die. The encapsulating volume can be configured below, at, or above a main surface of the substrate, with the packages including receiving/mounting structures to accommodate coupling of a transformer assembly. The packages and modules may include various types of circuits; in some examples, chips, chip packages, or modules may include a gate driver or other high voltage circuit.
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur
H01L 23/498 - Connexions électriques sur des substrats isolants
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
34.
ISOLATION TRANSFORMER PACKAGES WITH LAMINATED WINDING STRUCTURES
Aspects of the present disclosure include systems, structures, circuits, and methods providing laminated winding structures with coil portions for transformers. Transformer packages can include substrates with winding portions that connect to laminated winding structures to form complete transformer coils configured about a transformer core. The laminated winding structures can include spaces to receive a transformer core when mounted on a substrate. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
According to an embodiment, a magnetic field sensor includes: one or more magnetic field sensing elements; and a magnet structure to provide a bias magnetic field about the one or more magnetic field sensing elements, the magnet structure includes alternating magnetic layers and non-magnetic layers with at least three magnetic layers.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
36.
HALL PLATE CURRENT SENSOR HAVING STRESS COMPENSATION
Methods and apparatus for a voltage driven Hall plate current sensor integrated circuit (IC) package that includes a die including a Hall plate with a lateral epi resistor. A gm amplifier receives an output voltage from the Hall plate and a front end amplifier receives an output of the gm amplifier. A compensation circuit compensates for stress on the die that affects a resistance of the Hall plate and includes a lateral epi resistor coupled to a constant current for compensating for piezoresistive stress in the Hall plate.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
A system, comprising: a sensing element including a plurality of resistive elements; a switching matrix that is configured to change a total resistance of the sensing element by bringing online or offline one or more of the plurality of resistive elements, the total resistance of the sensing element, at any point in time, being based on respective resistances of only those of the plurality of resistive elements that are currently online; a matrix controller that is configured to detect when a value of a counter signal is updated and cause the switching matrix to change the total resistance of the sensing element by bringing offline or online one or more of the plurality of resistive elements based on the value of the counter signal; and a counter signal generator configured to detect whether an offset signal satisfies a predetermined condition and update the value of the counter signal.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
38.
SELF-CALIBRATING MAGNETORESISTANCE-BASED MAGNETIC FIELD SENSORS
Systems, circuits, and methods provide self-calibration for magnetoresistance-based magnetic field sensors. Examples can include use of a closed loop acting as a feedback or calibration loop that is configured to process a reference signal applied to one or more magnetoresistance elements in a MR-based magnetic field sensor that also detects one or more external magnetic fields. The closed loop can adjust a bias voltage applied to the one or more magnetoresistance elements based on the reference signal. The calibration loop can accordingly provide for automatic or self-calibration of sensitivity of one or more magnetoresistance elements of the sensors to compensate for external factors affecting sensitivity of the one or more magnetoresistance elements.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Systems, structures, packages, circuits, and methods provide leadless transformer packages for galvanic isolation. An example leadless transformer includes a substrate including opposed first and second surfaces and a plurality of conductive traces. The plurality of conductive traces includes a first group and a second group that are galvanically separate. The first group includes a plurality of exposed portions that are exposed at a first area of the substrate and the second group includes a plurality of exposed portions that are exposed at a second area of the substrate. A magnetic core is disposed on the substrate. First and second coils are each disposed about the magnetic core and configured for connection to the first and second groups of conductive traces, respectively. The package includes a dam disposed on the substrate and configured to surround the magnetic core, and an encapsulant is within the dam, encapsulating the magnetic core.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
A voltage-isolated transformer and integrated circuit package includes a substrate with opposed first and second surfaces and including a plurality of conductive traces, with a recess disposed in the second surface. The plurality of conductive traces includes a first group and a second group that are galvanically separate. A magnetic core is disposed on the first surface of the substrate. The magnetic core can include a soft ferromagnetic material. First and second coils are configured about the magnetic core and connected to the first and second groups of conductive traces, respectively, with the first and second coils and magnetic core being configured as a transformer. First and second integrated circuit die are disposed in the recess on the second surface. A dam is disposed on the first surface of the substrate and surrounding the magnetic core. An encapsulant disposed in the dam and encapsulating the magnetic core.
H01F 27/32 - Isolation des bobines, des enroulements, ou de leurs éléments
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
41.
METHOD AND APPARATUS FOR LIMITING MINORITY CARRIER INJECTION
A driver circuit comprising: a substrate; a first terminal; a second terminal; a switching circuit that is formed on the substrate, the switching circuit including a first switch and a second switch, the first switch having a first drain and a first source, the second switch having a second drain and a second source, the first drain being coupled to the first terminal, the first source being coupled to the second drain, the second source being coupled to ground, and the second terminal being coupled to the first source and the second drain; an electrostatic discharge (ESD) diode that is formed on the substrate; a trigger circuit that is formed on the substrate, the trigger circuit being configured to divert a first electrical current when the trigger circuit is activated, the first electrical current being diverted from the second terminal to the first terminal via the first switch.
H03K 17/06 - Modifications pour assurer un état complètement conducteur
H03K 17/082 - Modifications pour protéger le circuit de commutation contre la surintensité ou la surtension par réaction du circuit de sortie vers le circuit de commande
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
42.
SENSOR WITH COMMON MODE REJECTION AND OFFSET CORRECTION
A sensing bridge includes a first element type that is responsive to a magnetic field and a second element type that is not responsive to the magnetic field. The first element type can be a magnetoresistance element such as a TMR and the second element type can be a passive resistor. A switching matrix under control of a matrix controller is configured to change a total resistance of the sensing element by coupling or decoupling one or more dots of the TMR and/or passive resistor unit cells of the passive resistor to the sensing element. Test signal generation circuitry is configured to generate a common mode test magnetic field with which the common mode rejection ratio (CMRR) of a sensing bridge can be evaluated and corrected.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Systems, structures, packages, circuits, and methods provide leadframe-based packages with integrated IC-transformer structures having a transformer providing galvanic isolation for included IC die. An example leadframe-based voltage-isolated IC package includes a leadframe substrate with first and second leadframe, a magnetic core disposed on one side of the leadframe substrate, first and second IC die disposed on the other side of the leadframe substrate, a body including molding material encapsulating the first and second IC die; first and second coils configured about the magnetic core, and a wall configured to surround the magnetic core. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01L 25/16 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types couverts par plusieurs des sous-classes , , , , ou , p. ex. circuit hybrides
Methods and apparatus for a current sensor integrated circuit package including a current conductor, which may be a loop, having regions of different widths and first and second magnetic field sensing elements positioned in relation to the current loop. The first magnetic field sensing element generates a first output signal and the second magnetic field sensing element generates a second output signal. An adjustment circuit adjusts the output of the first magnetic field sensing element to generate an adjusted signal for the first magnetic field sensing element that is same as the second output signal. A diagnostic module receives the adjusted signal for the first magnetic field sensing element and the output of the second output signal to detect a presence of a stray field.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
Methods and apparatus for a device having a TMR element that includes a free layer, a spacer layer, and a reference layer. In embodiments, the free layer comprises a vortex layer configured to provide a magnetic vortex, and a coupling layer magnetically coupled to the vortex layer to modulate the vortex in the vortex layer.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
Methods and apparatus for a current sensor integrated circuit package that includes a die having a first magnetic field sensing element and a leadframe to support the die. The leadframe has a U-shaped current conductor loop with a throat region and a first notch in the throat region of the current conductor loop. A first magnetic field sensing element is positioned in relation to the first notch. In some embodiments, the first magnetic field sensing element is aligned with an edge of the first notch.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
Methods and apparatus for a signal isolator that mitigates the effects of CMTI strikes. In embodiments, a first die comprises a transmit module and the first die has a first voltage domain; and a second die comprises a receive module including a receive amplifier configured to receive from the transmit module a transmit signal that includes a differential signal and a common mode current. The second die may have a second voltage domain with the first and second die being separated by an isolation barrier. In embodiment, the receive amplifier includes a differential amplifier to receive the differential input signal from the transmit module; and a common mode module configured to sense the common mode current and sink or source the common mode current and minimize changes to an input impedance of the receive amplifier.
H03F 3/21 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
In some embodiments, an absolute position sensing system includes a magnetic field sensor and a target structure. The sensor includes an emitting coil configured to generate a magnetic field in response to a current through the emitting coil, a first arrangement of magnetic field sensing elements, and a second arrangement of magnetic field sensing elements. The target structure includes a plurality of coil elements arranged such that, during movement of the target structure relative to the sensor, the emitted field induces a current in different ones of the coil elements resulting in the generation of non-uniform magnetic fields about the first and second arrangements of magnetic field sensing elements. The sensor is configured to process a first signal from the first arrangement of magnetic field sensing elements and a second signal from the second arrangement of magnetic field sensing elements to determine an absolute position of the target structure.
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01D 5/16 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier la résistance
49.
TMR SENSOR HAVING MAGNETIC FIELD GENERATION FOR PILLAR STIMULATION
Methods and apparatus for a magnetic field sensor IC package having groups of arrays of TMR elements each having a pinning direction. An on-chip coil is routed under the TMR elements to conduct current for generating a magnetic field to stimulate the TMR elements. The device may be configured to sense changes in an applied magnetic field.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A signal encoding and decoding protocol to convey discrete sets of information combined in a single carrier signal is disclosed. The protocol uses modulation of both amplitude and pulse width to carry multiple sets of information. A first signal is pulse width modulated to encode a first data and a second signal is pulse amplitude modulated to encode a second data. The two modulated signals are combined to generate a carrier signal encoded with both the first and second data.
H03K 9/08 - Démodulation d'impulsions qui ont été modulées par un signal à variation continue d'impulsions modulées en durée ou en largeur
H04L 25/49 - Circuits d'émissionCircuits de réception à conversion de code au transmetteurCircuits d'émissionCircuits de réception à pré-distorsionCircuits d'émissionCircuits de réception à insertion d'intervalles morts pour obtenir un spectre de fréquence désiréCircuits d'émissionCircuits de réception à au moins trois niveaux d'amplitude
51.
CIRCUITS AND METHODS FOR SHUNT RESISTANCE MEASUREMENT
Apparatus and methods for measuring a shunt resistance through which an input current flows, wherein the input current has a first frequency range, include a voltage source configured to generate an AC voltage having a second frequency range that is higher than the first frequency range. An inductor, a capacitor, and the shunt resistance form an RLC network to which the voltage source is coupled. Processing circuitry coupled to receive a superimposed voltage across the shunt resistance is configured to generate a measured resistance indicative of the shunt resistance in response to the superimposed voltage.
G01R 27/16 - Mesure de l'impédance d'un élément ou d'un réseau dans lequel passe un courant provenant d'une autre source, p. ex. câble, ligne de transport de l'énergie
52.
PACKAGE CONFIGURATION FOR HIGH VOLTAGE GATE DRIVERS WITH A TRANSFORMER
According to one aspect of the present disclosure, a voltage isolated integrated circuit (IC) package configuration includes a first package comprising a transformer and a mold material enclosing the transformer to form a first package body, wherein the first package comprises a first lead set to permit electrical connection to the transformer. In some embodiments, a second package comprising a lead frame, two or more semiconductor die supported by the lead frame, and a mold material enclosing the two or more semiconductor die to form a second package body, wherein the lead frame comprises a second lead set to permit electrical connection to the two or more semiconductor die. In some embodiments, the one or more leads of the first lead set is directly electrically connected to one or more leads of the second lead set, wherein the first package and the second package are mechanically coupled together.
Example embodiments include methods and apparatus for a structure having a capacitor, where the structure includes a plurality of inter-metal dielectric (IMD) layers above a substrate, a plurality of metal layers between respective IMD layers. In embodiments, BEOL metal regions and interconnects form plates of the capacitor. In example embodiments, lateral capacitors can be formed away from the substrate.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
Methods and apparatus for optical detection having fast recovery from high amplitude input signals. In embodiments, a LIDAR system includes a photoreceiver to receive a return signal, and a circuit to modulate a gain of the photoreceiver over an acquisition window for the return signal, wherein the acquisition window contains time T0, and wherein the gain at time T0 is at a minimum for the acquisition window. In embodiments, the time T0 is at the beginning of the acquisition window.
A CAN transmitter includes an output branch, a replica branch including a replica of the output branch, and a feedback network. The output branch includes a first resistive element controlled by a first bias voltage and a second resistive element controlled by a second bias voltage. The replica branch has a feedback node that is replicated at a midpoint between the CANH bus terminal and the CANL bus terminal. The feedback network has a first input coupled to the feedback node, a second input configured to receive a midpoint reference voltage indicative of a desired midpoint voltage between the CANH and CANL terminals, and an output at which the first bias voltage is provided. A resistance controller is coupled to a control terminal of the second resistive element and configured to generate the second bias voltage based on a predetermined reference voltage and a bias current.
Aspects of the present disclosure include galvanically-isolated (voltage-isolated) transformer-based integrated circuit (IC) packages providing cavities or spaces, which can, in some examples, be formed by preferentially heating the included magnetic core or a material coating the magnetic core. The provision of a space around the magnetic core allows the magnetic core to underdo size changes due to magnetostriction during use without being constrained or substantially constrained, thus, providing for improved magnetic performance. The circuits, ICs and IC packages and modules may include various types of circuits. In some examples, IC packages or modules may include a galvanically-isolated gate driver or other high voltage circuit.
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventeur(s)
Solignac, Aurélie
Pannetier-Lecoeur, Myriam
Fermon, Claude
Campiglio, Paolo
Daga, Jean-Michel
Abrégé
Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A heterogeneous sensor system includes a magnetic field sensor and an inductive sensor. A checker is configured to receive the magnetic field sensor output signal and the inductive sensor output signal and determine whether an error has occurred based on a comparison of the magnetic field sensor output signal and the inductive sensor output signal. Targets include at least a portion that is conductive and may include a ferromagnetic portion for back biased magnetic sensing. Additional features include on axis and off axis positioning of the sensors with respect to the target, multi-track targets for absolute position sensing, angle sensing and torque sensing configurations.
G01L 3/10 - Dynamomètres de transmission rotatifs dans lesquels l'élément transmettant le couple comporte un arbre élastique en torsion impliquant des moyens électriques ou magnétiques d'indication
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 3/08 - Dispositions pour la mesure prévues pour les objets particuliers indiqués dans les sous-groupes du présent groupe avec dispositions pour protéger l'appareil, p. ex. contre les fonctionnements anormaux, contre les pannes
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
G01D 5/56 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens spécifiés dans plusieurs des groupes , , , et utilisant des moyens électriques ou magnétiques
G01L 3/14 - Dynamomètres de transmission rotatifs dans lesquels l'élément transmettant le couple est autre qu'un arbre élastique en torsion
Systems, circuits, and methods provide controlled active DC bus discharge, such as for electric vehicles (EVs) or hybrid vehicles. Controlled active DC bus discharge can be provided using gate drivers to control operation of traction inverter switches, such as power transistors, to accomplish a charge bleeding function. Power transistors can be configured so that the gate is connected to the drain, thereby forcing the gate threshold voltage across drain and source. The gate of a power transistor can be actively driven between a threshold voltage and Miller plateau threshold voltage. As a result, several volts can be generated across the power transistor while current decays, therefore safely discharging the system DC bus.
H02M 7/5387 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant alternatif sans possibilité de réversibilité par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs, p. ex. onduleurs à impulsions à un seul commutateur dans une configuration en pont
B60L 15/08 - Procédés, circuits ou dispositifs pour commander la propulsion des véhicules à traction électrique, p. ex. commande de la vitesse des moteurs de traction en vue de réaliser des performances désiréesAdaptation sur les véhicules à traction électrique de l'installation de commande à distance à partir d'un endroit fixe, de différents endroits du véhicule ou de différents véhicules d'un même train caractérisés par la forme du courant utilisé dans le circuit de commande utilisant des courants pulsés
H02M 1/088 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques pour la commande simultanée de dispositifs à semi-conducteurs connectés en série ou en parallèle
H02P 27/08 - Dispositions ou procédés pour la commande de moteurs à courant alternatif caractérisés par le type de tension d'alimentation utilisant une tension d’alimentation à fréquence variable, p. ex. tension d’alimentation d’onduleurs ou de convertisseurs utilisant des convertisseurs de courant continu en courant alternatif ou des onduleurs avec modulation de largeur d'impulsions
60.
INDUCTIVE 360-DEGREE ANGLE SENSOR USING A RADIALLY-SEPARATED DUAL TARGET
A method, comprising: providing a target including: (i) a base having a through-hole formed therein that defines an inner perimeter of the base, the base having an outer side running around an outer perimeter of the base, and the base having an inner side running around the inner perimeter of the base, (ii) a first set of first conductive features that are coupled to the outer side of the base, each of the first conductive features extending outwardly, (iii) and a second set of second conductive features that are coupled to the inner side of the base, each of the second conductive features extending inwardly; and detecting an angular position of the target based on a first electrical angle that is associated with the first set of first conductive features and a second electrical angle that is associated with the second set of second conductive features.
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
61.
MR SENSORS HAVING LAYER ORIENTATION CONTROL USING SOT CURRENT
Commissariat à l'énergie atomique et aux énergies alternatives (France)
Inventeur(s)
Solignac, Aurélie
Pannetier-Lecoeur, Myriam
Fermon, Claude
Campiglio, Paolo
Daga, Jean-Michel
Abrégé
Methods and apparatus for an MR device having a ferromagnetic material, a heavy metal layer configured to flow a charge current, and an insulating layer between the ferromagnetic material and the heavy metal layer. The insulating layer is configured to electrically insulate and to magnetically couple the heavy metal layer and the ferromagnetic layer for generating a field like (FL) field in the ferromagnetic material in response to the charge current. In some embodiments, the MR device comprises a TMR device having a free layer or a reference layer oriented by the charge current. In other embodiments, the MR device comprises a GMR device.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
62.
AUTOMATIC TUNING FOR BLDC MOTOR FIELD-ORIENTED CONTROLLER
Methods and apparatus for automatic tuning of parameters for field-oriented control (FOC) of a BLDC motor with a controller with user input. Automatic tuning can include measuring electrical parameters comprising Phase resistance (Rs), Phase inductance (Ls), and Back-electromotive force (BEMF) constant (Ke). Automatic tuning can further include tuning of ac alignment and start-up processing, tuning of a current closed loop, and tuning of a speed closed loop.
Methods and apparatus for motor startup with reduced acoustic noise include a startup module to generate a startup d-axis voltage during a startup interval and a startup q-axis voltage during the startup interval, wherein the startup interval ends at a time based on the observer error, and wherein the startup q-axis voltage increases during the startup interval. The startup module is configured to continuously linearly increase the speed of the motor during the startup interval. An observer generates a speed estimate, an angle estimate, and an observer error representative of a difference between an actual angle and the angle estimate. A voltage increment by which the startup q-axis voltage is increased during the startup interval is adjusted based on the observer error. The voltage increment can be equal to a constant value plus the observer error.
Methods and apparatus for magnetic field sensor having a sample chopping with a shared ADC. A sensor may include receiving a chopping sequence for samples from first and second channels that share an analog-to-digital converter (ADC) in a magnetic field sensor. The samples for the first and second channel are timed with respect to a virtual sampling time (VST), such that a sum of the sample times for the samples for the first channel is equal to the VST, and a sum of the sample times for the samples for the second channel is equal to VST.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
65.
MAGNETORESISTIVE ELEMENT HAVING THERMALLY ROBUST PERFORMANCES AFTER HIGH-FIELD EXPOSURE AND SENSOR COMPRISING THE MAGNETORESISTIVE ELEMENT
Magnetoresistive element comprising a reference layer having a fixed reference magnetization; a ferromagnetic sense layer having a free sense magnetization having a stable vortex configuration that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field; and a tunnel barrier layer between the reference layer and the sense layer and contacting a first side of the sense layer. The magnetoresistive element further comprises a hard magnetic layer arranged on a second side (212) of the sense layer opposed to the first side, the hard magnetic layer being configured to generate an interfacial magnetic coupling between the hard magnetic layer and the sense layer on the second side, such as to prevent chirality switching of the sense magnetization after the magnetoresistive element has been submitted to a heat treatment and an external magnetic field above vortex expulsion field.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
66.
TRANSFORMER PACKAGES WITH CONTROLLED MAGNETOSTRICTION
Aspects of the present disclosure include galvanically-isolated (voltage-isolated) transformer-based integrated circuit (IC) packages providing cavities or spaces for an included magnetic core to underdo size changes due to magnetostriction without being constrained or substantially constrained, thus, providing for improved magnetic performance. The circuits, ICs and IC packages and modules may include various types of circuits. In some examples, IC packages or modules may include a galvanically-isolated gate driver or other high voltage circuit.
H01F 41/00 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques
67.
Sensor with adjustable digital output signal resolution
A sensor integrated circuit includes a sensing element configured to generate a sensor output signal proportional to a sensed parameter, a front-end amplifier coupled to receive the sensor output signal and configured to generate an amplifier output signal, and a sigma-delta modulator coupled to receive the amplifier output signal and configured to generate a digital sensor output signal indicative of the sensed parameter. At least one of the front-end amplifier or the sigma-delta modulator has an adjustable setting configured to change a resolution of the digital sensor output signal.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
69.
CONTINUOUSLY CALIBRATED MAGNETIC FIELD SENSOR WITH IN-BAND CALIBRATION
A system, comprising: a reference magnetic field source that is configured to generate a reference magnetic field; a plurality of magnetic field sensing elements arranged in a sensing bridge, the sensing bridge being configured to sense the reference magnetic field and an external magnetic field simultaneously, the sensing bridge being configured to output a first signal and a second signal; a first circuit that is configured to generate a common mode signal of the sensing bridge based on the first signal and the second signal; an adjustment circuit that is configured to adjust a sensitivity of the sensing bridge based, at least in part, on a common mode signal of the sensing bridge; and a processing circuitry that is configured to use a differential signal of the sensing bridge to generate an output signal, the differential signal being based on a strength of the external magnetic field.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
70.
CONTINUOUSLY CALIBRATED MAGNETIC FIELD SENSOR WITH IN-BAND CALIBRATION
A system, comprising: a reference magnetic field source that is configured to generate a reference magnetic field; a plurality of magnetic field sensing elements arranged in a sensing bridge, the sensing bridge being configured to sense the reference magnetic field and an external magnetic field simultaneously, the sensing bridge being configured to output a first signal and a second signal; a first circuit that is configured to generate a common mode signal of the sensing bridge based on the first signal and the second signal; an adjustment circuit that is configured to adjust a sensitivity of the sensing bridge based, at least in part, on a common mode signal of the sensing bridge; and a processing circuitry that is configured to use a differential signal of the sensing bridge to generate an output signal, the differential signal being based on a strength of the external magnetic field.
Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
72.
Systems and Methods for Integrated Shielding in a Current Sensor
Systems and methods described herein are directed towards integrating a shield layer into a current sensor to shield a magnetic field sensing element and associated circuitry in the current sensor from electrical, voltage, or electrical transient noise. In an embodiment, a shield layer may be disposed along at least one surface of a die supporting a magnetic field sensing element. The shield layer may be disposed in various arrangements to shunt noise caused by a parasitic coupling between the magnetic field sensing element and the current carrying conductor away from the magnetic field sensing element.
G01R 15/14 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
73.
DUAL SEMICONDUCTOR DIE CURRENT SENSOR INTEGRATED CIRCUIT
A current sensor IC includes a lead frame having a first surface, a second opposite surface and including a primary conductor and signal leads. A first semiconductor die has a first surface adjacent to the first surface of the lead frame and supporting a first magnetic field sensing element and a second semiconductor die has a first surface adjacent to the second surface of the lead frame and a second opposite surface supporting a second magnetic field sensing element. Fabrication methods include a single mold method and a two-mold method in which a mold material can provide isolation between the first semiconductor die and the primary conductor. Also described is a current sensor IC in which both first and second semiconductor die are arranged in a flip-chip configuration. Diagnostic circuits and inter-die connections permit one semiconductor die to sense faults with the other semiconductor die.
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/31 - Encapsulations, p. ex. couches d’encapsulation, revêtements caractérisées par leur disposition
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
A semiconductor package, comprising: a substrate; an analog circuitry that is formed on the substrate; a first heating element that is formed on the substrate; a first temperature sensing element that is formed on the substrate; a first heating control circuitry that is formed on the substrate, the first heating control circuitry being configured to detect whether a first temperature measurement that is taken with the first temperature sensing element is below a first threshold, and turn on the first heating element in response to detecting that the first temperature measurement is below the first threshold, the first heating element being turned on only when the first temperature measurement is below the first threshold; and an encapsulating material configured to encapsulate the substrate, the analog circuitry, the first temperature sensing element, the first heating element, and the first heating control circuitry.
H05B 3/18 - Éléments chauffants caractérisés par la composition ou la nature des matériaux ou par la disposition du conducteur le conducteur étant enrobé dans un matériau isolant
G01K 1/02 - Moyens d’indication ou d’enregistrement spécialement adaptés aux thermomètres
G01K 3/00 - Thermomètres donnant une indication autre que la valeur instantanée de la température
G05D 23/20 - Commande de la température caractérisée par l'utilisation de moyens électriques avec un élément sensible présentant une variation de ses propriétés électriques ou magnétiques avec les changements de température
A buffer includes a first branch to receive a digital input signal and generate a first intermediate signal having falling edges that are delayed and faster than rising edges of the digital input signal and rising edges that are substantially coincident with falling edges of the digital input signal and a second branch to receive the digital input signal and generate a second intermediate signal having rising edges that are delayed and faster than falling edges of the digital input signal and falling edges that are substantially coincident with rising edges of the digital input signal. An output stage has a first input to receive the first intermediate signal, a second input to receive the second intermediate signal, and an output at which a buffer output signal is provided as a delayed version of the digital input signal having faster rising and falling edges than the digital input signal.
H03K 19/003 - Modifications pour accroître la fiabilité
H03K 5/134 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés utilisant une chaîne de dispositifs actifs de retard avec des transistors à effet de champ
H03K 5/1534 - Détecteurs de transition ou de front
A system, comprising: a conductor having a pair of primary surfaces, the conductor including a through-hole formed therein, the conductor including a first notch that is formed adjacent to the through-hole; and a printed circuit board that is inserted in the through-hole, the printed circuit board having a current sensor mounted thereon, the current sensor being disposed inside the through-hole, the current sensor including a first magnetic field sensing element and a second magnetic field sensing element having respective axes of maximum sensitivity that are substantially perpendicular to the primary surfaces of the conductor.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
77.
Interleaving sub-arrays of magnetoresistance elements based on reference directions to compensate for bridge offset
In one aspect, a bridge includes at least eight sets of sub-arrays. Each one of the at least eight sets of sub-arrays forms a corresponding one magnetoresistance element. Each one of the at least eight sets of sub-arrays has a reference direction. The at least eight sets of sub-arrays are arranged in a matrix on a die. A reference direction of each one of the at least eight sets of sub-arrays is different from a reference direction of at least one other of the at least eight sets of sub-arrays.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A method comprising: transmitting a data block that is part of a message, the data block including a plurality of data block symbols; detecting a duration of an end portion of the message, the duration being detected based on a difference between: (i) a time that is allotted for transmitting the message and (ii) a time needed for transmitting the data block as well as any other element of the message that precedes the end portion; and transmitting one or more auxiliary data symbols as part of the end portion of the message, wherein the end portion has a flexible duration that is selected to synchronize a total duration of the message to the time that is allotted for transmitting the message, and wherein each of the data block symbols and each of the auxiliary data symbols is encoded by using pulse-width modulation (PWM).
H03K 9/08 - Démodulation d'impulsions qui ont été modulées par un signal à variation continue d'impulsions modulées en durée ou en largeur
H04L 7/04 - Commande de vitesse ou de phase au moyen de signaux de synchronisation
H04L 25/49 - Circuits d'émissionCircuits de réception à conversion de code au transmetteurCircuits d'émissionCircuits de réception à pré-distorsionCircuits d'émissionCircuits de réception à insertion d'intervalles morts pour obtenir un spectre de fréquence désiréCircuits d'émissionCircuits de réception à au moins trois niveaux d'amplitude
Split-detector lidar photoreceivers are described which utilize range-dependent focus to transition from illuminating two detector elements with returns from near targets, within a close-range threshold distance, to illuminating just one detector element for all other returns. In some examples, a split-detector can have or include a “bullseye” (concentric) detector configuration. Because two separate detector elements with separate amplifier chains are used, one channel can be optimized for the strong to and near-target returns, while another channel can be optimized and used for all other returns.
According to one aspect of the disclosure, a method includes: receiving, by a magnetic field sensor, first and second magnetic field signals responsive to motion of a target; generating first and second digital pulse signals responsive to the first and second magnetic field signals, respectively; calculating a first time between a pulse edge of the first digital pulse signal and a next pulse edge of the second digital pulse signal; calculating a second time between two different pulse edges of the first digital pulse signal or two different pulse edges of the second digital pulse signal; calculating, using the calculated first and second times, a phase shift between the first and second magnetic field signals; and generating, using the calculated phase shift, a third magnetic field signal having a predetermined phase shift from the first magnetic field signal or from the first magnetic field signal.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
An apparatus, comprising: a first transmitting coil including at least one first portion and at least one second portion, the first and second portions having different polarities; and a second transmitting coil that is disposed above or below the first transmitting coil, the second transmitting coil including at least one third portion and at least one fourth portion, the third and fourth portions having different polarities, wherein the first and second transmitting coils are configured so that, when the first transmitting coil is not driven and the second transmitting coil is driven, a net magnetic flux through at least one of the first portions is approximately zero, the net magnetic flux being a magnetic flux that is entirely attributable to the second transmitting coil.
H02J 50/80 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique mettant en œuvre l’échange de données, concernant l’alimentation ou la distribution d’énergie électrique, entre les dispositifs de transmission et les dispositifs de réception
A system is provided comprising: a first target including a plurality of first teeth; and a second target that is coupled to the first target via a mechanical link, the second target including a plurality of second teeth, the second target being disposed above or below the first target, the plurality of first teeth including a different number of teeth than the plurality of second teeth, wherein the first target and the second target are configured to generate respective magnetic fields in response to one or more excitation magnetic fields, the respective magnetic fields being usable to measure a twisting force that is incident on the mechanical link that couples the first target to the second target.
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
G01D 3/02 - Dispositions pour la mesure prévues pour les objets particuliers indiqués dans les sous-groupes du présent groupe avec dispositions pour changer ou corriger la fonction de transfert
83.
SENSOR INTEGRATED CIRCUIT WITH CURRENT OUTPUT CALIBRATION
A sensor integrated circuit configured to generate a sensor output current indicative of a sensed parameter includes a power connection to receive a supply voltage, a ground connection, a sensing circuit configured to generate a parameter current proportional to the sensed parameter, and an output connection at which the sensor output current is provided. An output current calibration circuit is configured to determine an offset current that corresponds to a bias voltage at the output connection equal to a fixed percentage of the supply voltage when the parameter current is substantially zero. The sensor output current is provided as a combination of the parameter current and the offset current.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
A system is provided comprising: a first target including a plurality of first teeth; and a second target that is coupled to the first target via a mechanical link, the second target including a plurality of second teeth, the second target being disposed above or below the first target, the plurality of first teeth including a different number of teeth than the plurality of second teeth, wherein the first target and the second target are configured to generate respective magnetic fields in response to one or more excitation magnetic fields, the respective magnetic fields being usable to measure a twisting force that is incident on the mechanical link that couples the first target to the second target.
G01B 7/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
85.
MAGNETIC-FIELD BIOSENSOR MEASURING A DIFFERENTIAL SIGNAL FROM AT LEAST TWO MAGNETIC-FIELD SENSING ELEMENTS
In one aspect, a magnetic-field biosensor includes an insulator and a plurality of magnetic-field sensing elements that includes a first and a second magnetic-field sensing elements. The insulator has a first and a second plurality of portions, and the second plurality of portions is thicker than the first plurality of portions. The magnetic-field biosensor further includes a first receptor configured to attach to biological material and being on a first portion of the first plurality of portions and directly above the first magnetic-field sensing element; and a second receptor configured to attach to the biological material and being on a first portion of the second plurality of portions and directly above the second magnetic-field sensing element. Outputs of the first and the second magnetic-field sensing elements are used to sense a magnetic field from a first magnetic nanoparticle by reducing an effect of an applied magnetic field.
G01N 33/543 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet avec un support insoluble pour l'immobilisation de composés immunochimiques
B01L 3/00 - Récipients ou ustensiles pour laboratoires, p. ex. verrerie de laboratoireCompte-gouttes
G01N 27/74 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant des variables magnétiques des fluides
G01R 33/12 - Mesure de propriétés magnétiques des articles ou échantillons de solides ou de fluides
A system, comprising: a processing circuitry that is configured to: receive a signal S1 and a signal S2, the signal S1 being generated by a first receiving coil in response to a first magnetic field, the signal S2 being generated by a second receiving coil in response to the first magnetic field, receive a signal S3 and a signal S4, the signal S3 being generated by a third receiving coil in response to a second magnetic field, the signal S4 being generated by a fourth receiving coil in response to the second magnetic field; calculate a first electrical angle based on signals S1 and S2; calculate a second electrical angle based on signals S3 and S4; and generate an output signal based on the first and second electrical angles.
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
B62D 15/02 - Indicateurs de direction ou aides de direction
87.
VOLTAGE-ISOLATED INTEGRATED CIRCUIT PACKAGES WITH PIN-COUPLED COILS
Aspects of the present disclosure include systems, structures, circuits, and methods providing pin-coupled transformers and/or pin-coupled coil structures. A pin-coupled coil structure can include first and second substrates, each having a plurality of conductive traces. The conductive traces of the substrates are connected by conductive pins, forming one or more pin-coupled coil structures. Two pin-coupled coils structure can be configured around a transformer core forming a pin-coupled transformer structure. The pin-coupled transformer structure can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
H01F 17/00 - Inductances fixes du type pour signaux
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
88.
VOLTAGE-ISOLATED INTEGRATED CIRCUIT PACKAGES WITH PLANAR TRANSFORMERS
Aspects of the present disclosure include systems, structures, circuits, and methods providing planar transformers and planar transformer structures. The planar transformers and transformer structures can include first and second core layers of soft ferromagnetic material on opposite sides of an electrical substrate. First and second coils can be configured as conductive traces disposed on the opposite sides of the substrate. The first and second soft ferromagnetic layers are in contact in a contact region. One or more holes are disposed in either or both of the soft ferromagnetic layers and contain soft ferromagnetic material to reduce reluctance of the transformer structure. The planar transformer can be included in integrated circuit (chip) packages or modules. The packages and modules may include various types of circuits; in some examples, chip packages or modules may include a gate driver or other high voltage circuit.
H01F 41/24 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer des pellicules magnétiques sur des substrats à partir de liquides
H01F 41/26 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer des pellicules magnétiques sur des substrats à partir de liquides en utilisant des courants électriques
89.
MAGNETIC FIELD CURRENT SENSOR TO REDUCE STRAY MAGNETIC FIELDS
A magnetic field current sensor comprising: a conductor; magnetic field sensing elements including a first magnetic field sensing element generating a first signal, a second magnetic field sensing element generating a second signal, a third magnetic field sensing element generating a third signal, and a fourth magnetic field sensing element generating a fourth signal; circuitry that generates a difference signal indicative of twice the second signal less the first signal and less the fourth signal, wherein the second magnetic field sensing element is interleaved with the third magnetic field sensing element, wherein the second signal and the third signal are substantially equal, and wherein a distance between the first magnetic field sensing element and the second magnetic field sensing element is equal to a distance between the second magnetic field sensing element and the fourth magnetic field sensing element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
90.
SENSOR INTERFACE WITH TEMPERATURE SIGNAL PROCESSING
A sensor interface includes a signal path configured to receive a sensing element output signal from a sensing element and to generate an interface output signal indicative of a parameter sensed by the sensing element, an NTC interface and a diode interface. The NTC interface is configured to be coupled to an NTC element having a non-linear resistance over temperature and to generate an NTC signal indicative of a linearized version of the non-linear resistance of the NTC element and the diode interface configured to be coupled to a diode and to generate a diode signal indicative of an absolute temperature.
G01K 7/25 - Mesure de la température basée sur l'utilisation d'éléments électriques ou magnétiques directement sensibles à la chaleur utilisant des éléments résistifs l'élément étant une résistance non linéaire, p. ex. une thermistance dans un circuit spécialement adapté, p. ex. un circuit en pont pour modifier la caractéristique de sortie, p. ex. linéarisation
A magnetic field speed sensor includes one or more magnetic field sensing elements to generate a magnetic field signal indicative of a magnetic field associated with a moveable target and a controller to generate a controller output signal including a plurality of output words, each including a speed pulse and a plurality of data pulses capable of having four different amplitudes. The time between the speed pulses of consecutive output words is indicative of the speed of movement of the target. Each data pulse corresponds to a data bit having a binary value represented by a transition direction of the data pulse and the amplitude of the data pulse. Features include a programmable data pulse width or an adaptively adjustable data pulse width to avoid truncation.
G01P 3/487 - Dispositifs caractérisés par l'utilisation de moyens électriques ou magnétiques pour mesurer la vitesse angulaire en mesurant la fréquence du courant ou de la tension engendrés de signaux ayant la forme d'impulsions délivrés par des aimants rotatifs
A system, comprising: a power switch; a controller; a transformer having a primary winding and a secondary winding; a first control interface that is coupled between the controller and the primary winding, the first control interface being arranged to: (i) detect an electrical current through the primary winding and (ii) output a fault signal to the controller in response to detecting that the electrical current through the primary winding has crossed a threshold; and a second control interface that is coupled between the secondary winding and the power switch, the second control interface being configured to: (i) provide an electrical current received from the transformer to the power switch, (ii) detect whether an error is present in the operational conditions of the power switch, and (iii) in response to detecting the error, change a level of an electrical current through the secondary winding.
H02M 1/32 - Moyens pour protéger les convertisseurs autrement que par mise hors circuit automatique
H02M 1/00 - Détails d'appareils pour transformation
H02M 3/155 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs
Aspects of the present disclosure include systems, structures, circuits, and methods providing integrated circuit (IC) packages or modules having a transformer with first and second spiral coils disposed on or adjacent to a substrate, each including one or more coil portions on one or multiple levels and having varying distances to an aperture or coil-origin region. A portion of a soft ferromagnetic core of the transformer can pass through the aperture or be adjacent to the coil origin region. The IC packages and modules may include various types of circuits; in some examples, IC packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
Aspects of the present disclosure include systems, structures, circuits, and methods providing integrated circuit (IC) packages (500) or modules having a transformer (520) with first and second spiral coils (504, 506) disposed on or adjacent to a substrate (502), each including one or more coil portions on one or multiple levels and having varying distances to an aperture or coil-origin region. A portion (512c) of a soft ferromagnetic core (512) of the transformer can pass through the aperture (A) or be adjacent to the coil origin region (A). The IC packages and modules may include various types of circuits; in some examples, IC packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (France)
Inventeur(s)
Campiglio, Paolo
Nguyen Ba, Doan
Rioult, Maxime
Solignac, Aurélie
Daga, Jean-Michel
Abrégé
In one aspect, a method includes manufacturing a tunneling magnetoresistance (TMR) element to sense out-of-plane changes in magnetic field intensity in a magnetic field. The manufacturing includes depositing a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction. A top layer of the plurality of antiferromagnetic layers has a magnetization direction in the first direction. The manufacturing also includes depositing a ferromagnetic layer directly on the top layer; depositing a first multilayer structure directly on the ferromagnetic layer; depositing a metal layer directly on the first multilayer structure; and depositing a second multilayer structure directly on the metal layer. The ferromagnetic layer, the first multilayer structure, and the second multilayer structure are each parallel to an x-y plane and the first direction is either in a z-direction or in a -z direction.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
According to one aspect of the present disclosure, a magnetoresistance (MR) element includes a free layer. In some embodiments, the free layer also includes a vortex layer comprising a vortex and a skyrmion layer magnetically coupled to the vortex layer. In some embodiments, in the skyrmion layer is configured to form skyrmions that reduce annihilation of the vortex thereby increasing a linear response range of the MR element. In some embodiments, the MR element is a tunneling magnetoresistance element or a giant magnetoresistance element. In some embodiments, the MR element includes a barrier layer, wherein the vortex layer is closer to the barrier layer than the skyrmion layer.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
97.
TUNNEL MAGNETORESISTANCE ELEMENT TO DETECT OUT-OF-PLANE CHANGES IN A MAGNETIC FIELD INTENSITY OF A MAGNETIC FIELD
Commissariat à l'énergie atomique et aux énergies alternatives (France)
Inventeur(s)
Campiglio, Paolo
Nguyen Ba, Doan
Rioult, Maxime
Solignac, Aurélie
Daga, Jean-Michel
Abrégé
In one aspect, a method includes manufacturing a tunneling magnetoresistance (TMR) element to sense out-of-plane changes in magnetic field intensity in a magnetic field. The manufacturing includes depositing a plurality of antiferromagnetic layers having magnetization directions alternating by layer between a first direction and a second direction opposite the first direction. A top layer of the plurality of antiferromagnetic layers has a magnetization direction in the first direction. The manufacturing also includes depositing a ferromagnetic layer directly on the top layer; depositing a first multilayer structure directly on the ferromagnetic layer; depositing a metal layer directly on the first multilayer structure; and depositing a second multilayer structure directly on the metal layer. The ferromagnetic layer, the first multilayer structure, and the second multilayer structure are each parallel to an x-y plane and the first direction is either in a z-direction or in a −z direction.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Methods and apparatus for an optical system that can include a receiver to protect an optical sensor for damage. In one embodiment, a optical receiver includes a lens to receive an optical signal and a non-linear optical (NLO) element to receive an output from the lens, where the NLO element has an intensity dependent optical index. The receiver can include an optical sensor and an aperture located between the optical sensor and the NLO element.
A system comprising: a conductor having a through-hole and a first notch that are formed therein, the through-hole and the first notch being arranged to define, at least in part, a first branch of the conductor, and the through-hole also being arranged to define, at least in part, a second branch of the conductor; and a current sensor that is disposed directly above the first branch of the conductor and the side of the second branch of the conductor, such that no portion of the current sensor is situated directly above the second branch.
According to one aspect of the present disclosure, a semiconductor device includes a substrate having a first type dopant. In some embodiments, the semiconductor device also includes an epitaxial layer above the substrate, having a second type dopant and a top region. In some embodiments, the semiconductor device also includes a trench in the top region of the epitaxial layer; at least one doped ring implanted in the epitaxial layer below the trench; and a dielectric material filling within the trench. In some embodiments, there is a twelve-sided body tie in the epitaxial layer, wherein the sides of the twelve-sided body tie are not all equal to each other.
H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
H01L 29/08 - Corps semi-conducteurs caractérisés par les formes, les dimensions relatives, ou les dispositions des régions semi-conductrices avec des régions semi-conductrices connectées à une électrode transportant le courant à redresser, amplifier ou commuter, cette électrode faisant partie d'un dispositif à semi-conducteur qui comporte trois électrodes ou plus
H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
H01L 29/66 - Types de dispositifs semi-conducteurs