Systems, circuits, and methods provide heat-sink-coupled conductive structures having eddy current mitigation structures, formed as S-notches, and integrated current sensors. An example conductive structure includes a high-current conductor structure having a main current path including an S-notch portion configured to mitigate eddy currents. The structure includes a low-current conductor structure connected to a first heat sink and having a main current path configured to conduct a second current. A differential current sensor is connected to the low-current conductor structure and configured to detect current flowing in the high-current conductor structure. A power module includes the conductive structure and a power converter that is configured to convert power between the first current in the high-current conductor structure and the second current in the low-current conductor structure. The conductive structures and power modules can be used for EV applications.
H02M 1/00 - Détails d'appareils pour transformation
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/10 - Mesure d'une somme, d'une différence, ou d'un rapport
According to one aspect of the present disclosure, a voltage isolated integrated circuit (IC) assembly includes a first component comprising a first width and a first length to form a first recess to allow for inspection of a lead set of a second component. In some embodiments, the lead set extends out of the second component at a second length to form an electrical and mechanical connection to a substrate. In some embodiments, the first component is stacked on top of the second component such that the first and second components are in a stacked configuration.
Methods and apparatus for a multipath device, such as a current sensor. Example embodiments include a low pass filter to receive a first signal within a first frequency range for a first signal path and a second low pass filter to receive a second signal within a second frequency range for a second signal path, wherein the second frequency range is higher than the first frequency range. A network receives the filtered first signal and the filtered second signal, which has a corner frequency aligned with a crossover frequency of the network for generating a high pass output signal from the second low pass filter with a flat frequency response above the crossover frequency.
G01R 15/14 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p. ex. des transformateurs
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
4.
HIGH-ACCURACY SENSOR WITH HETEROGENEOUS ARCHITECTURE
A sensor, comprising: a first signal path having a first gain, the first signal path including a plurality of magnetoresistance (MR) elements, the first signal path being configured to generate a first signal; a second signal path having a second gain, the second signal path including one or more Hall elements, the second signal path being configured to generate a second signal; a feedback path that is configured to balance the first gain with the second gain, the feedback path including a first feedback coil, a second feedback coil, and a first variable resistor, the first feedback coil being arranged to influence the plurality of MR elements, the second feedback coil being arranged to influence the Hall elements, the first variable resistor being arranged to at least in part adjust an electrical current that is used to drive at least one of the first feedback coil and the second feedback coil.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
5.
MULTIPATH CIRCUIT HAVING ENHANCED FREQUENCY CROSSOVER PERFORMANCE
Methods and apparatus for a multipath device, such as a current sensor. Example embodiments include a low pass filter to receive a first signal within a first frequency range for a first signal path and a second low pass filter to receive a second signal within a second frequency range for a second signal path, wherein the second frequency range is higher than the first frequency range. A network receives the filtered first signal and the filtered second signal, which has a corner frequency aligned with a crossover frequency of the network for generating a high pass output signal from the second low pass filter with a flat frequency response above the crossover frequency.
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p. ex. des transformateurs
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
A semiconductor device includes a front-end circuit configured to generate an input signal is described. The semiconductor device also includes a first amplifier circuit having a first amplifier to receive the input signal and provide an unclamped signal. The semiconductor device also includes a second amplifier circuit having a second amplifier and a clamping circuit. The second amplifier receives the input signal, and the clamping circuit clamps an output from the second amplifier in response to the output exceeding a threshold (or trimming) value. The semiconductor device also includes a combiner circuit configured to receive the unclamped signal and the clamped signal and to produce a combined signal based on the unclamped signal and the clamped signal. The combined signal has one sensitivity at or below the threshold value and a second sensitivity above the threshold value. A trimming method for the semiconductor device is also described.
This disclosure describes circuitry to improve the cancellation of the input-referred offset in the opamp of a sensor front end by implementing a feedback path around the opamp in the digital domain. This implementation uses an A/D converter, a digital integrator and a D/A converter. The A/D converter can be a 1-bit converter constructed with a comparator. The performance of the comparator can be improved by using a chopping technique. The integrator can be initialized upon power-up to a state from a previous measurement, dramatically reducing the convergence time. The gain of the feedback path can be adjusted, which lowers or raises a low frequency pole. Lowering the gain lowers the pole frequency and improves the low frequency response of the transducer path. The low frequency pole can be set track the slowly varying opamp offset.
A sensor including: a substrate having a cavity formed in a first main surface of the substrate; a first mesa that is formed in the cavity; a second mesa that is formed in the cavity a first magnet that is formed in the cavity, the first magnet being arranged to at least partially fill the cavity, the first magnet being arranged to surround the first mesa and the second mesa.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
A semiconductor device includes a front-end circuit configured to generate an input signal is described. The semiconductor device also includes a first amplifier circuit having a first amplifier to receive the input signal and provide an unclamped signal. The semiconductor device also includes a second amplifier circuit having a second amplifier and a clamping circuit. The second amplifier receives the input signal, and the clamping circuit clamps an output from the second amplifier in response to the output exceeding a threshold (or trimming) value. The semiconductor device also includes a combiner circuit configured to receive the unclamped signal and the clamped signal and to produce a combined signal based on the unclamped signal and the clamped signal. The combined signal has one sensitivity at or below the threshold value and a second sensitivity above the threshold value. A trimming method for the semiconductor device is also described.
A sensor, including: a first sensing element and a first calibration coil that is disposed adjacent to the first sensing element, the first sensing element being configured to generate a first signal at least in response to a primary magnetic field and a first calibration magnetic field that is generated by the first calibration coil; a second sensing element and a second calibration coil that is disposed adjacent to the second sensing element, the second sensing element being configured to generate a second signal at least in response to the primary magnetic field and a second calibration magnetic field that is generated by the second calibration coil; and one or more first summation elements that are configured to: (i) generate a calibration signal based on a difference between the first signal and the second signal by subtracting the difference from a reference signal.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
In one aspect, a compact frequency spectrum detector includes one or more digital signal processing blocks configured to receive a digital signal and output information about at least one frequency component of the digital signal using a filter, wherein the at least one frequency component is specified by an index, wherein the one or more digital signal processing blocks are configured to calculate at least one constant based on the index by approximating a trigonometric function using a second order expansion of the trigonometric function, wherein the at least one constant is provided as input to the filter. In another aspect, a system includes an artificial intelligence (AI) agent and a plurality of sensors each having a compact frequency spectrum detector configured to compute information about at least one frequency component of a digital signal and transmit the computed information to the AI agent.
Disclosed are example systems, methods, and structures for providing an improved transformer. Also disclosed are example systems, methods, and structures for providing an improved system including a transformer. Further disclosed are example systems, methods, and structures for providing an improved magnetic core for a transformer. For example, disclosed are example systems, methods, and structures for providing an improved ferrite core for transformers used in galvanically isolated circuits, such as galvanically isolated gate drivers. Example systems, methods, and structures described herein provide for constructing transformer cores out of multiple components composed of different materials. By using multiple different materials to construct a transformer core, the size (i.e., dimensions) of a transformer may be minimized. Moreover, constructing a transformer core of multiple materials may minimize performance changes of a transformer across temperature variations.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
13.
DEMAGNETIZATION MECHANISM FOR ISOLATED GATE DRIVERS
Magnetically isolated gate drivers include primary side gate drivers configured to produce demagnetization voltages that counter integrated flux resulting from refresh pulses sent through the transformer. A magnetically-isolated gate driver circuit includes an isolation transformer including a primary coil and a secondary coil configured about a magnetic core, control circuitry including a control signal pulse generator configured to produce refresh power pulses and including a demagnetization circuit, connected to the primary coil; where the demagnetization circuit is configured to produce demagnetization pulses to demagnetize or mitigate against saturation of the magnetic core.
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
14.
HIGH-SIDE DRIVERS PROVIDING ADAPTIVE POWER DELIVERY
Systems, structures, packages, circuits, and methods provide gate drivers providing adaptive power refresh techniques for high-side drivers used to control operation of power (switching) devices such a MOSFETs or other transistors. One or more time-to-voltage circuits are used to measure ON times of input control voltage signals of a gate driver. Each time-to-voltage circuit includes an input, a first switch connected to the input, a current source, a capacitor, and a reset switch configured in parallel with capacitor. Measurement of ON times of successive pulses are used to control a voltage controlled oscillator, which is used to generate refresh power pulses at timing positions distinct from the input control voltage signals to avoid pulse clash while providing sufficient power to high-side circuitry.
A correction method for correcting an output signal provided by a magnetoresistive sensor in the presence of an external magnetic field, includes: determining a deviation of the output signal from a linear response by an amplitude of a high order component signal of the output voltage; and determining a corrected output signal by compensating the output signal for the high order component signal such that the corrected output signal varies linearly with a variation of the external magnetic field within a variation range. Further, an integrated circuit (IC) can be configured to perform the method and a characterization method to derive common parameters used when performing the correction method, for a plurality of magnetoresistive sensors.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01D 3/02 - Dispositions pour la mesure prévues pour les objets particuliers indiqués dans les sous-groupes du présent groupe avec dispositions pour changer ou corriger la fonction de transfert
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
16.
XMR SENSOR WITH CONTINUOUS-TIME COIL COMPENSATION LOOP
A magnetoresistance sensing device includes an on-chip coil capable of generating a magnetic field measured by a wheat stone bridge. The on-chip coil is used in a compensation loop and constructed in parallel with a main signal path using a separate, matched xMR compensation bridge. The separate xMR bridge allows generating and measuring a compensation signal continuously and differentially, which improves signal fidelity without introducing noise into the primary signal path. One or more chopper switches are provided to eliminate offset and flicker noise.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Methods and apparatus for a signal acquisition system having a normal mode diagnostic modes. In embodiments, a method includes performing offset cancellation by cancelling the first input signal during an offset diagnostic mode, comparing an output of the amplifier to a first threshold in response to cancelling the first signal, and generating an offset fault when the first threshold is exceeded. In an injection diagnostic mode, a method includes injecting a second signal into the amplifier, combining an output from the amplifier during the injection of the second signal and a reconstructed signal generated from the first signal to generate a combiner output signal, comparing the combiner output signal to a second threshold, and examining a result of the comparison of the combiner output signal and the second threshold to detect a circuit fault.
Magnetoresistive element (20) for sensing an external magnetic field, comprising a tunnel barrier layer (22) sandwiched between a ferromagnetic reference layer (21) having a pinned reference magnetization (210), and a ferromagnetic sense layer (23) having a sense magnetization (230), wherein the reference, tunnel barrier, and sense layers (21, 22, 23) are stacked perpendicular to a layer plane (PL) thereof. The reference magnetization (210) is oriented substantially perpendicular to the layer plane (PL), and the sense magnetization (230) is oriented substantially parallel to the layer plane (PL). At least the sense layer (23) has an annular cross-section in the layer plane (PL), with an inner diameter (Dint) and an outer diameter (Dout). The sense magnetization (230) has a closed flux path configuration that is orientable either in the clockwise or counterclockwise direction. The inner diameter (Dintt) is larger than 300 nm, and a difference between the inner and outer diameters (Dint, Dout) is greater than 150 nm.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A sensor, comprising: one or more magnetic field sensing elements that are configured to generate a sensing signal, the sensing signal being indicative of a strength of a magnetic field that is incident on the one or more magnetic field sensing elements; a processing circuitry that is configured to generate an output signal based on the sensing signal; and a first amplifier that is configured to drive a first coil based on the sensing signal, the first coil being coupled in a first negative feedback loop of the first amplifier, wherein the first negative feedback loop spans between a first input terminal of the first amplifier and a first output terminal of the first amplifier, and wherein the sensing signal is, at least in part, applied at the first input terminals of the first amplifier.
According to one aspect, a magnetic flux concentrator includes: a ferromagnetic material having a loop shape interrupted by an air gap region and forming a central opening, wherein the air gap region includes a first side having at least two protrusions and a second side having at least one protrusion interleaved with, and not in mechanical contact with, the protrusions of the first side. According to another aspect, a sensor utilizes such a magnetic flux concentrator to detect a difference in current between two conductors.
A sensor, comprising: a first signal path including one or more first Hall elements that are configured to generate a first signal in response to an external magnetic field that is incident on the sensor and a reference magnetic field, the first signal path being configured to process the first signal to generate a first processed signal; a second signal path including one or more second Hall elements that are configured to generate a second signal in response to the external magnetic field and the reference magnetic field, the second signal path being configured to process the second signal to generate a second processed signal; a feedback coil that is configured to generate the reference magnetic field; and a feedback circuit that is configured to use the use the first processed signal to adjust respective biases of the first Hall elements and the second Hall elements.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
22.
FLUX CONCENTRATOR AND MAGNETORESISTANCE CONFIGURATIONS
A magnetic field sensor includes magnetoresistance elements supported by a surface of the die defining a plane, and a concentrator layer over the surface of the die and having an aperture. A first magnetoresistance element is adjacent to a first edge of the aperture and has a first reference direction parallel to the surface of the die and substantially perpendicular to the first aperture edge and a second magnetoresistance element is adjacent to a second edge of the aperture and has the first reference direction. The concentrator layer redirects the applied magnetic field to present a differential field parallel to the plane of the die to the magnetoresistance elements in response to applied field perpendicular to the plane of the die and to present a reduced magnitude and common mode field to the magnetoresistance elements in response to the applied field parallel to the plane of the die.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A sensor comprising: a sensing bridge including a first leg and a second leg, the first leg including a first magnetoresistance (MR) element that is coupled to a second MR element via a first transistor, the second leg including a third MR element that is coupled to a fourth MR element via a second transistor; a frontend circuit having a first input and a second input, the first input being coupled to the first leg, and the second input being coupled to the second leg; and a first resistive digital-to-analog converter (R-DAC) that is coupled to at least the first leg, the first R-DAC being arranged to receive a first trim code and modify a first resistance of the first leg based on the first trim code.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
A sensor, including: a gradiometer including a plurality of magnetoresistors, the gradiometer being configured to generate a sensing signal in response to a magnetic field that is at least in part produced as a result of an electrical current flowing through a conductor; and electronic circuitry configured to detect an electrical current consumption of the gradiometer, compare the electrical current consumption against at least one of a first threshold and a second threshold, and output an indication that the sensor is subject to tampering based on an outcome of the comparison.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/165 - Indication de ce qu'un courant ou une tension est, soit supérieur ou inférieur à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée
A method, comprising: identifying a default supply voltage of a relay; identifying an actual supply voltage of the relay; selecting an actual duty cycle based on the actual supply voltage and the default supply voltage; and driving a coil of the relay by using a signal that has the selected actual duty cycle.
H01H 47/02 - Circuits autres que ceux appropriés à une application particulière du relais et prévue pour obtenir une caractéristique de fonctionnement donnée ou pour assurer un courant d'excitation donné en vue de modifier le fonctionnement du relais
H01H 47/00 - Circuits autres que ceux appropriés à une application particulière du relais et prévue pour obtenir une caractéristique de fonctionnement donnée ou pour assurer un courant d'excitation donné
H01H 47/22 - Circuits autres que ceux appropriés à une application particulière du relais et prévue pour obtenir une caractéristique de fonctionnement donnée ou pour assurer un courant d'excitation donné pour l'alimentation de la bobine du relais en courant d'excitation
26.
SYSTEMS AND METHODS FOR OBTAINING A REPRESENTATION OF MAGNITUDE OF A SENSED MAGNETIC FIELD
Disclosed are example systems and methods for obtaining a representation of magnitude of a magnetic field as sensed by a sensor device. In particular, described are example systems and methods for obtaining a squared modulus value representative of magnitude of a magnetic field as sensed by a sensor device. In some embodiments, amplitudes of signals representing a magnetic field generated by a target may be sampled by the sensor device, and pulse width modulated (PWM) signals representative of the amplitudes may be generated. A double integration of a constant value over the widths of the PWM signals may then be performed, and the results of the double integrations added to obtain a squared modulus value representative of a magnitude of the magnetic field as sensed by the sensor device.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
27.
SENSOR HAVING NOISE REDUCTION USING CASCADED FILTERS
Methods and apparatus for a sensor having noise filtering using cascaded filters. A detection module can detect noise above a threshold level and a control module coupled to the detection module can output a control signal based on whether the detection module detects the noise above the threshold level. A filter module includes a first filter and a second filter cascaded with the first filter. The first filter has reconstruction mode to output a signal based on the input prior to detection of the noise above the threshold level. The second filter filters an output of the first filter to smooth the output of the first filter.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
Aspects of the present disclosure include systems, structures, circuits, and methods providing voltage-isolated integrated circuit (IC) packages or modules having a transformer integrated with or implemented on a lead frame. A portion of transformer windings may include a conductive portion of a lead frame. Conductive structure, such as wire bonds, may be used for other portions of transformer windings. In some examples, an insulating coating may be placed on the package to increase the isolation capability of the final package. The IC packages and modules may include various types of circuits; in some examples, IC packages or modules may include a galvanically isolated gate driver or other high voltage circuit.
Disclosed are example systems, methods, and structures for improving magnetic field sensor performance. In particular, described are example systems, methods, and structures for improving magnetic field sensor performance in applications where magnetic field sensing elements detect a deflection of a magnetic field generated by a magnet. Systems, methods, and structures disclosed herein may provide a sensor device that includes magnetic field sensing elements and a plurality of magnet structures embedded in a semiconductor die. In some embodiments, the plurality of magnet structures may be configured to generate a magnetic field corresponding to a layout of the magnetic field sensing elements in the semiconductor die.
G01D 5/244 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant les caractéristiques d'impulsionsMoyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions
30.
ADAPTIVE POWER LIMITATION CIRCUIT AND HANDSHAKE DEACTIVATION/REACTIVATION PROTOCOL FOR A MULTIPHASE DCDC CONTROLLER
A device includes an adaptive power limitation circuit configured to automatically determine active phases of a DCDC converter based upon power level of the DCDC converter. The adaptive power limitation circuit includes a translinear circuit configured to convert the power level of the DCDC converter to a current level and a clamping circuit, operatively connected to the translinear circuit, configured to clamp a maximum output current of the adaptive power limitation circuit to a predetermined value.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
31.
ADAPTIVE POWER LIMITATION CIRCUIT AND HANDSHAKE DEACTIVATION/REACTIVATION PROTOCOL FOR A MULTIPHASE DCDC CONTROLLER
A method pulls down, by a responder device having at least two responder channels, a first pin to a pre-determined voltage level when all responder channels of the responder device are turned OFF; detects that a requestor coupled to the responder has frozen a synchronization signal on a second pin when voltage on the first pin is below a certain threshold; terminates a pulling down, by the responder device, the first pin to the pre-determined voltage level after the responder device detects no activity on the second pin; generates a synchronization signal, by the requestor device, on a second pin when a load power demand reaches a reactivation threshold; and turns ON all responder channels of the responder device, by the responder device, when the responder device detects the synchronization signal on the second pin.
H02M 1/00 - Détails d'appareils pour transformation
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
32.
SYSTEMS AND METHODS FOR ERROR CHECKING IN MAGNETIC FIELD SENSING APPLICATIONS
Disclosed are example systems and methods for error checking in magnetic field sensing applications. In particular, described are example systems and methods for error checking in magnetic field sensors used for determining a rotation angle of an object that rotates. In some embodiments, a plurality of signals representative of a magnetic field generated by a magnetic target may be received. The plurality of signals may be combined to determine a value, and a determination made as to whether the determined value is an expected value. When the determined value is not an expected value, an output signal representing an error may be output.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
An apparatus, comprising: a processing circuitry; a first magnetoresistance (MR) sensing element including a first sequence of first MR structures that are coupled to each other, the first sequence of first MR structures defining at least one first turn that is wound in a first direction; a second MR sensing element including a second sequence of second MR structures that are coupled to each other, the second sequence of second MR structures defining at least one second turn that is wound in a second direction, the second direction being opposite to the first direction; a third MR sensing element including a third sequence of third MR structures that are coupled to each other, the third sequence of third MR structures defining at least one third turn that is wound in the first direction; a fourth MR sensing element including a fourth sequence of fourth MR structures that are coupled to each other, the fourth sequence of fourth MR structures defining at least one fourth turn that is wound in the second direction.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
Systems, structures, packages, circuits, and methods provide high-side gate driver circuits configured to control operation of high-side power (switching) transistors without use of external bootstrap capacitors. A high-side driver can include three sections, including a pull-up section, first pull-down section, and a second pull-down or Miller clamp section. The gate drivers can include a charge pump circuit and can avoid use of bootstrap capacitors and related circuitry. Partitioned gate drivers can include an individual pull-up section, an individual first pull-down section, and an individual second pull-down section for each of multiple high-side power transistors.
H02M 1/08 - Circuits spécialement adaptés à la production d'une tension de commande pour les dispositifs à semi-conducteurs incorporés dans des convertisseurs statiques
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
35.
MULTI-CHANNEL ISOLATION TRANSFORMER AND GATE DRIVER STRUCTURES
Systems, structures, packages, circuits, and methods provide multi-channel isolation transformer and gate driver structures with one or more primary and multiple secondary coils. The transformer structures include magnetic cores configured for use with multiple channels providing galvanic isolation for each channel. The channels can pass control (data) and/or power signals/pulses. One or more integrated circuits may be included with transformer packages, structures, and modules. In some examples, structure, chip packages, or modules may include one or more galvanically isolated gate drivers and/or other high voltage circuits.
A sensor, comprising: a first signal path including a plurality of magnetoresistance (MR) elements, the first signal path being configured to generate a first signal based, at least in part, on an output of the MR elements, the output of the MR elements being generated, at least in part, in response to an external magnetic field that is incident on the sensor and a first feedback magnetic field; a second signal path including one or more Hall elements, the second signal path being configured to generate a second signal based, at least in part, on an output of the Hall elements; a first feedback coil that is configured to generate the first feedback magnetic field, the first feedback coil being driven with a first drive current, the first drive current being generated, at least in part, based on the first signal.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
37.
TMR SENSOR HAVING ANTIFERROMAGNETICALLY COUPLED VORTICES
Methods and apparatus for a sensor having a TMR stack with first and second vortices that are antiferromagnetically coupled together in a synthetic anti-ferromagnet (SAF) arrangement to create a TMR free layer. Due to the opposite behavior of the vortices, and to the coupling which opposes them, relatively strong fields are needed to induce magnetic modifications in the free layer. With this arrangement, the free layer of the stack has relatively wide linear response.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
Example embodiments provide for a magnetic field bio sensor having a first coil with first and second portions on different metal layers connected by first vias and a second coil having first and second portions on different ones of the metal layers connected by second vias. The second portion of the first coil overlaps with the first portion of the second coil to promote heat dissipation via an inactive one of the first and second coils and reduce die area.
G01N 27/74 - Recherche ou analyse des matériaux par l'emploi de moyens électriques, électrochimiques ou magnétiques en recherchant des variables magnétiques des fluides
G01N 33/487 - Analyse physique de matériau biologique de matériau biologique liquide
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Disclosed are example systems and methods for power management. In particular, described are example systems and methods that may be used to provide different power modes. For example, different sub-systems that consume different amounts of power may be used in the system. In some embodiments, one of the sub-systems may always be active (i.e., always on (AON)) when the system is powered on, and another of the sub-systems may be switched between being active and being inactive (i.e., powered on and off (ONO)) depending on power mode. In some embodiments, the systems and methods disclosed herein may prevent data sent from an ONO sub-system from being stored in an AON sub-system until the ONO sub-system determines it has been properly reset. In some embodiments, the systems and methods disclosed herein may isolate an AON sub-system from signals sent from an ONO sub-system prior to powering down the ONO sub-system.
Methods and apparatus for a sensor having an ADC including acquiring data samples at a first resolution in a sensor having an ADC that digitizes the data samples and processing the data samples to obtain a value for parameter and determine a difference between the value and a first threshold. Further data samples are acquired at a second resolution higher than the first resolution if the difference is less than a selected amount.
H03M 1/20 - Augmentation de la résolution par l'utilisation d'un système à n bits pour obtenir n+m bits, p. ex. par addition d'un signal aléatoire
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
Method and apparatus for a magnetic sensor device having a magnetic field sensing element to generate an output signal and a signal processing module coupled to the magnetic field sensing element, the signal processing module including linearization module having an analog translinear circuit.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
42.
Counterfeit integrated circuit detector based on blockchain technology
A device and method provide a visible or audible indication of whether an integrated circuit (IC) is authentic using cryptographic hashes stored on a blockchain. The IC includes a cryptographic mining circuit that creates blocks for storage in the blockchain. Each such block includes the value of a cryptographic hash function applied to a serial number unique to the IC and the hash value most recently stored in the blockchain. The necessary data are communicated between the IC and a blockchain server by an intermediary electronic authentication device, which also receives data from the server that indicate whether the second hash value equals an expected hash value computed by (or provided to) the server. The electronic authentication device accordingly provides a suitable visible or audible message to a user.
H04L 9/32 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
H04L 9/00 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité
An apparatus, comprising: a substrate; a switching device that is formed over the substrate, the switching device including a gate layer, a source layer, and a drain layer; a first layer of dielectric material that is formed over the switching device; a first contact member that is electrically coupled to one of the gate layer, the source layer, and the drain layer, the first contact member being formed of at least one electrically-conductive material, the first contact member extending through the first layer of dielectric material; a plurality of first magnetic field sensing elements, the plurality of first magnetic field sensing elements being arranged to at least partially surround the first contact member, the plurality of first magnetic field sensing elements being arranged, at least in part, to form a sensing circuit for measuring a level of electrical current through the first contact member.
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
Methods and apparatus for energizing and de-energizing a coil that controls a position of a contactor. In embodiments, a first switching device is coupled between the first end of a coil and a first potential node and a second switching device is coupled between the second end of the coil and a second potential node. A third switching device is coupled across a connection of the coil and the second switching device and a zener diode coupled across the second switching device. A contactor has a position determined by a current level through the coil.
H01H 47/32 - Courant d'excitation fourni par un dispositif semi-conducteur
H01H 47/00 - Circuits autres que ceux appropriés à une application particulière du relais et prévue pour obtenir une caractéristique de fonctionnement donnée ou pour assurer un courant d'excitation donné
H01H 47/36 - Bobine(s) de relais faisant partie d'un circuit en pont
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
A method, comprising: generating a comparison signal SP having a first value when a voltage that is applied at one end of a contactor coil of a relay is above a threshold VP and a second value when the voltage is below the threshold VP; generating a comparison signal SD having the first value when the voltage is above a threshold VD and the second value when the voltage is below the threshold VD; detecting whether the relay is in a faulty state based on the comparison signals SP and SD; and generating an indication of a fault when the relay is detected to be in a faulty state.
Systems, circuits, and methods provide ring shaped TMR elements having increased linearity. Such ring shaped TMR elements provide transducer output responses to changes in input magnetic field levels that are more linear compared to prior TMR techniques and devices. In some embodiments, a free layer having a ring shape can create a circular magnetization resulting in a TMR element linearity that can be adjusted depending on the width of the ring shaped element. In some embodiments, such ring shaped TMR elements can overcome small diameter fabrication limits of prior art vortex elements.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
47.
Magnetic sensor having sensing elements on sloped substrate
Methods and apparatus for a magnetic sensor having a substrate with a major surface and opposing sloped surfaces and magnetoresistive (MR) magnetic field sensing elements coupled in a bridge configuration. At least some of the magnetic field sensing elements are located on the sloped surfaces. In embodiments, the sensor comprises a 3D magnetometer. In some embodiments, the bridge configuration comprises an x-axis bridge, a y-axis bridge, and a z-axis bridge.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/02 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A method comprising: generating, by a peak detector, a comparison signal by comparing a coil current of a relay against a dynamic threshold, the comparison signal having a first value when the coil current is above the dynamic threshold, the comparison signal having a second value when the coil current is below the dynamic threshold, wherein the peak detector is configured to: cause the dynamic threshold to track the coil current until a positive peak in the coil current is reached that has a value PP, and set the dynamic threshold to a rebound value R in response to detecting that a negative peak in the coil current is reached, the rebound value R being based on the value PP; detecting whether the relay is in a faulty state based on the comparison signal; and generating an indication of a fault when the relay is in a faulty state.
Disclosed are example systems, methods, and structures for reducing conductor cross-talk error. In particular, disclosed is an example conductor structure that can conduct current and that accommodates placement of a current sensor device. The systems, methods, and structures disclosed herein may allow for multiple example conductor structures to be placed in proximity to each other, and may allow a current sensor device to measure an amount of current flowing in one of the conductor structures, while reducing the impact of any current flowing in a neighboring conductor structure on the measurement of the current sensor device. Also disclosed herein are example methods for making such a conductor structure. Further disclosed herein are example systems that incorporate both such an example conductor structure and a current sensor device, and example methods for configuring a current sensor system including both such an example conductor structure and current sensor device.
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
50.
Rapid serial data out (RSDO) backdoor enabling SPI communication
Rapid-data-transfer sensor arrays include a controller and a plurality of sensor integrated circuits (ICs) connected in series and configured to periodically take measurements and provide measurement data to the controller as serial data. The sensor IC includes a power regulation circuit configured to selectively supply power for a low-power mode and an active mode for recording data and an internal shift register. When finished with the measurement, the sensor IC is configured to provide measurement data to the shift register for transfer to the controller. The controller is configured to initiate serial transfer of data from each of the shift registers of the first plurality of sensor ICs to the controller. Switching functionality provides the capability to switch sensors or sensor ICs from one operational mode to another, e.g., from a rapid serial data out (RDSO) mode to an SPI mode.
A drive circuit comprises a transformer, a primary side circuit communicating with a primary winding of the transformer, and a secondary side circuit communicating with a secondary winding of the transformer. The primary side circuit couples to a primary side supply voltage and to an input signal and couples a first signal to the primary winding. The secondary side circuit communicates with the semiconductor switch and provides, responsive to the first signal, a second signal to control the semiconductor switch, comprising at least one of a primary bias and a secondary bias. For a first gate charge level range, the secondary side circuit provides the primary bias. For a second gate charge level range greater than the first range, the secondary side circuit is controlled by a secondary bias circuit comprising a storage capacitor configured to accumulate voltage when the secondary side circuit is providing the primary bias.
H03K 17/687 - Commutation ou ouverture de porte électronique, c.-à-d. par d'autres moyens que la fermeture et l'ouverture de contacts caractérisée par l'utilisation de composants spécifiés par l'utilisation, comme éléments actifs, de dispositifs à semi-conducteurs les dispositifs étant des transistors à effet de champ
A redundant inductive sensor system includes at least two interface circuits, each associated with a respective transmitting coil that is electromagnetically coupled to one or more receiving coils. The first interface circuit transmits during a first transmitting interval and the second interface circuit transmits during a second transmitting interval that does not overlap with the first transmitting interval. The first interface circuit receives the second signal during a first listening interval of the first interface circuit encompassing the second transmitting interval and the second interface circuit receives the first signal during a second listening interval of the second interface circuit encompassing the first transmitting interval. By listening to transmissions from transmitting coils other than an associated transmitting coil, interface circuits can detect errors in other interface circuits.
G01B 7/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques
G01V 3/10 - Prospection ou détection électrique ou magnétiqueMesure des caractéristiques du champ magnétique de la terre, p. ex. de la déclinaison ou de la déviation fonctionnant au moyen de champs magnétiques ou électriques produits ou modifiés par les objets ou les structures géologiques, ou par les dispositifs de détection en utilisant des cadres inducteurs
53.
CO-LOCATED DIFFERENTIAL MAGNETIC SENSOR CLUSTERS FOR SAFETY REDUNDANCY
Systems, structures, packages, circuits, and methods provide magnetic current sensors with redundant magnetic field elements or groups of elements used for current sensing. Such systems, structures, packages, circuits, and methods allow for the measurement of a diagnostic channel to be similar in amplitude to the measurement of the main channel in the case of gradient magnetic fields. Some embodiments can utilize three magnetic sensing elements or groups of elements to provide redundant safety while using less area. The sensors can provide fault indications when comparisons between the measurements made for the main and diagnostic channels are outside of a specified range or do not compare favorably.
G01R 19/10 - Mesure d'une somme, d'une différence, ou d'un rapport
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
54.
MAGENTIC FIELD SENSOR WITH INDEPENDENT MAGNETIC FEEDBACK LOOPS
A sensor, comprising: a first sensing bridge that is configured to generate, at least in part, a first sensing signal, the first sensing bridge including a plurality of first magnetic field sensing elements; a first amplifier that is configured to amplify the first sensing signal to generate a first amplified sensing signal; a first coil that is configured to receive the first amplified sensing signal and generate a feedback magnetic field in response; a second sensing bridge that is configured to generate, at least in part, a second sensing signal, the second sensing bridge including a plurality of second magnetic field sensing elements; a second amplifier that is configured to amplify the second sensing signal to generate a second amplified sensing signal; a second coil that is configured to receive the second amplified sensing signal and generate a second feedback magnetic field in response.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
The present disclosure concerns a magnetic sensor (100) for sensing an external magnetic field, comprising a plurality of magnetoresistive sensor elements (10), each comprising a reference layer (21) having a reference magnetization (210), a sense layer (23) having a sense magnetization (230) comprising a stable vortex configuration, and a tunnel barrier layer (22). In a layer plane (PL) of the layers (21, 22, 23), each magnetoresistive sensor element (10) has a regular polygon shape comprising n vertices and has a lateral size (D) in the layer plane (PL) between 0.2 pm and 5 pm. Each magnetoresistive sensor element (10) has an aspect ratio of its thickness (ty) to its lateral size (D) between 0.005 and 2. Each magnetoresistive sensor element (10) is rotated in the layer plane (PL) by 36072n relative to an adjacent magnetic sensor element (10). Alternatively, the reference magnetization (210) of each magnetoresistive sensor elements (10) is rotated by 36072n in the layer plane (PL) relative to the reference magnetization (210) of an adjacent magnetoresistive sensor element (10).
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
Tactile sensors have conductive traces disposed on a deformable conductive layer that is disposed on electrodes on a substrate. Monitoring circuitry can detect changes in conductivity, resistance, and/or current due to deformation of the deformable layer in response to applied forces and produce corresponding output signals indicative of the deformation of the deformable layer. Magnitude, direction, duration and/or location of the force or pressure causing the deformation can be determined from the output signals. Related methods of manufacturing tactile sensors are described.
G01L 1/22 - Mesure des forces ou des contraintes, en général en mesurant les variations de la résistance ohmique des matériaux solides ou des fluides conducteurs de l'électricitéMesure des forces ou des contraintes, en général en faisant usage des cellules électrocinétiques, c.-à-d. des cellules contenant un liquide, dans lesquelles un potentiel électrique est produit ou modifié par l'application d'une contrainte en utilisant des jauges de contrainte à résistance
57.
SYSTEMS, METHODS, AND TECHNIQUES FOR VARYING OUTPUT RESOLUTION OF A SENSOR DEVICE
Disclosed are example systems, methods, and techniques for adaptively varying a resolution of information output from a sensor device. In particular, described are example systems, methods, and techniques for adaptively varying a resolution of information output from a sensor device based on a frequency of rotation of a target. Also described herein are example systems, methods, and techniques for conveying which of a series of events caused information to be output from a sensor device.
G01D 5/243 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la phase ou la fréquence d'un courant alternatif
58.
CASCADE MAGNETIC SENSOR CIRCUIT AND A LINEAR MAGNETIC SENSOR DEVICE COMPRISING THE CASCADE MAGNETIC SENSOR CIRCUIT
The present disclosure concerns magnetic sensor device (10) for sensing an external magnetic filed vector (H) comprising a cascade magnetic sensor circuit (100) comprises N magnetic sensors (2n), wherein N equal to or greater than 2, wherein said N magnetic sensors (2n) comprises a first magnetic sensor (21) and at least another magnetic sensor (2n) electrically connected in cascade with each other. The first magnetic sensor (21) is configured to generate a first output voltage (Vout1) dependent on an external magnetic field vector (H) when inputted with an input bias voltage (Vdd). The output voltage of the nth magnetic sensor is used as input bias voltage of the next (n+1) magnetic sensor. The magnetic sensor device (10) further comprises at least one reference magnetic field sensor (2Ref). The corrected output voltage has improved linearity compared to the reference output voltage.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A current sensor integrated circuit (IC) package is flip-chip bonded using a conductive film to connect the IC circuit bond pads to the lead frame. A conductive film is positioned between the die surface of a semiconductor die and at least one signal lead of the lead frame. The conductive film is conductive in a first direction between the die and the signal lead and nonconductive in other directions. The conductive film is further configured to control a gap height between the die and the lead frame to reduce die tilt, thus improving the sensitivity and performance consistency of the package.
Systems, structures, packages, circuits, and methods provide winding-less transformer structures, sub-assemblies and assemblies. Larger substate panels, e.g., a PCB or other type of substrate, can be constructed with designated locations in smaller subunits for transformer cores, which when placed at those designated locations create portions of transformers. The cores can be affixed onto the larger panels, which can then be partitioned or broken into smaller parts that can each form a subassembly. The subassemblies can then be combined with appropriate matching structures to complete the coil structures for the transformers. One or more integrated circuits such as gate drivers may be included with transformer sub-assemblies, assemblies, packages or modules.
H01F 41/02 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants
H01F 41/04 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour la fabrication de noyaux, bobines ou aimants pour la fabrication de bobines
61.
ANGLE SENSOR HAVING HETEROGENOUS REDUNDANT SENSING
Methods and apparatus for having heterogenous redundant angle sensing. In embodiments, an angle sensor has inductive sensing and magnetic sensing for a target having a magnetic portion and a metallic portion. In embodiments, the magnetic portion includes a ring magnet centered within the metallic portion, which can be referred to as a cap. In some embodiments, the target-facing side of the cap is sloped. In some embodiments, the target-facing side of the cap and the ring magnet are sloped.
G01D 5/22 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile influençant deux bobines par une action différentielle
G01B 7/00 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques
G01B 7/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes
G01D 5/243 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la phase ou la fréquence d'un courant alternatif
Methods and apparatus for having heterogenous redundant angle sensing. In embodiments, an angle sensor has inductive sensing and magnetic sensing for a target having a magnetic portion and a metallic portion. In embodiments, the magnetic portion includes a ring magnet centered within the metallic portion, which can be referred to as a cap. In some embodiments, the target-facing side of the cap is sloped. In some embodiments, the target-facing side of the cap and the ring magnet are sloped.
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
63.
DIFFERENTIAL SENSING ELEMENT PLACEMENT IN CURRENT SENSORS FOR HETEROGENEOUS STRAY FIELD IMMUNITY
A sensor, comprising: a conductor having a curved portion; a first anchor magnetic field sensing element that is formed at an intersection of a first axis and a second axis that is substantially perpendicular to the first axis, the first magnetic field sensing element being formed on a space that is partially enclosed by the curved portion; a first magnetic field sensing element that is formed on the first axis, the first magnetic field sensing element being disposed on an opposite side of the conductor from the first anchor magnetic field sensing element; and a second magnetic field sensing element that is formed on the second axis, the second magnetic field sensing element being disposed on an opposite side of the conductor from the first anchor magnetic field sensing element.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
64.
Wireless power transmission with channel redundancy
Systems, structures, packages, circuits, and methods provide wireless power and communication signal transmission systems with channel redundancy. Embodiments can be used in mechanical systems having rotating components. Two emission coils can have different topologies and can be used with three or four reception coils. The chosen topologies can be selected to ensure and/or facilitate minimal mutual inductance across topologies when the reception coils are rotated relative to the emission coils. To minimize mutual inductance between coils of different power transmission channels, twists can be added to the coil topologies to alter coil field polarity. Angle sensing can be achieved by determining efficiency of power transmission between the transmission and reception coils.
H04B 1/00 - Détails des systèmes de transmission, non couverts par l'un des groupes Détails des systèmes de transmission non caractérisés par le milieu utilisé pour la transmission
H02J 50/40 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant plusieurs dispositifs de transmission ou de réception
H04B 5/79 - Systèmes de transmission en champ proche, p. ex. systèmes à transmission capacitive ou inductive spécialement adaptés à des fins spécifiques pour le transfert de données en combinaison avec le transfert d'énergie
H02J 50/12 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif du type couplage à résonance
Methods and apparatus for a lidar system having spatio-temporal filtering to reduce false alarms in image data. In embodiments, the probability of a lidar return being real and not a false alarm is calculated based on both the current and historical presence of other returns which are spatially adjacent to the return being calculated. The probability is used to filter false alarms through thresholding.
G01S 17/04 - Systèmes de détermination de la présence d'une cible
G01S 7/48 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 7/487 - Extraction des signaux d'écho désirés
H04N 25/40 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner
H04N 25/618 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit pour les bruits aléatoires ou de haute fréquence
66.
MAGNETORESISTIVE ELEMENT FOR SENSING A MAGNETIC FIELD IN AN OUT-OF-PLANE DIRECTION WITH INCREASED SENSITIVITY
The present disclosure concerns a magnetoresistive sensor (MR) element, comprising a reference layer having a reference magnetization; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field, the sense magnetization being reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The MR element further comprises a dipolar assisting layer, configured to generate a dipolar stray field oriented substantially out-of-plane, such that the dipolar stray field is added to the out-of-plane external magnetic field, resulting in an effective magnetic field that is larger than and proportional to the external magnetic field. The present disclosure further concerns a magnetic sensor device comprising the MR element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
A device, comprising: a position sensor including an optical sensing element and an image processor, the image processor being configured to use the optical sensing element to take images of a visual mark that is formed on a target, detect a position of the target based on the images, and generate a first signal that is indicative of the position of the target; a current sensor including one or more magnetic field sensing elements, the current sensor being configured to measure a level of electrical current through a conductor, and generate a second signal that is indicative of the level of the electrical current through the conductor; and a motor controller that is configured to receive the first and second signals and generate a third signal for powering an electric motor, the third signal being generated based on the first and second signals; and a semiconductor package.
G06V 10/764 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant la classification, p. ex. des objets vidéo
The present disclosure concerns a magnetoresistive sensor (MR) element, comprising a reference layer having a reference magnetization; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field, the sense magnetization being reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The MR element further comprises a dipolar assisting layer, configured to generate a dipolar stray field oriented substantially out-of-plane, such that the dipolar stray field is added to the out-of-plane external magnetic field, resulting in an effective magnetic field that is larger than and proportional to the external magnetic field. The present disclosure further concerns a magnetic sensor device comprising the MR element.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Systems, structures, circuits, packages and methods provide low-power devices such as sensors and sensor packages having one or more Wiegand coils that can be used for activation of a sensor or other device, as well as potentially supplying operating power. In some embodiments, one or more Wiegand coils can be located in a sensor package, e.g., as one or more discrete components in the package and/or on formed on or connected to a semiconductor die within the package, for providing wake-up and/or continuous power. The Wiegand coil(s) can be separated from the sensor die in some embodiments. In some embodiments, the Wiegand coil(s) can be constructed on the die itself.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H02J 50/00 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique
H02J 50/10 - Circuits ou systèmes pour l'alimentation ou la distribution sans fil d'énergie électrique utilisant un couplage inductif
70.
BANDWIDTH BY TUNING RELATIVE CONDUCTOR SIZE IN A VERTICAL SLIT CONDUCTOR
A system comprising: a conductor having a first through-hole and a second through-hole formed therein, the first and second through-holes being arranged to define a first leg, a second leg, and a third leg of the conductor, the first leg having a first width, the second leg having a second width that is substantially equal to the first width, and the third leg having a third width, the second leg being disposed between the first through-hole and the second through-hole, the first leg being disposed across the first through-hole from the second leg, and the third leg being disposed across the second through-hole from the second leg; and a current sensor that is disposed in the first through-hole, the current sensor being arranged to measure a level of electrical current through the conductor, wherein a ratio between the first width and the third width is in the range of 0.45-0.60.
G01R 19/25 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe utilisant une méthode de mesure numérique
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
71.
System for compensating for an output latency in a speed sensor
A speed sensor device includes sensing elements to sense an angle of a moving target and to generate sine and cosine signals in response thereto; a signal condition circuit to process the sine and cosine signals, the processed sine and cosine signals having a phase lag introduced by the signal condition circuit; and a phase lead filter to receive the processed sine and cosine signals and to reduce the phase lag in the processed sine and cosine signals.
G01P 3/487 - Dispositifs caractérisés par l'utilisation de moyens électriques ou magnétiques pour mesurer la vitesse angulaire en mesurant la fréquence du courant ou de la tension engendrés de signaux ayant la forme d'impulsions délivrés par des aimants rotatifs
72.
SPARK GAP STRUCTURES AND METHODS IN AN INTEGRATED CIRCUIT DEVICE
Apparatus includes a substrate, a metal layer over the substrate, and a passivation layer over the metal layer. The metal layer includes a first metal portion coupled to a first bond pad and having a first terminal end and a second metal portion coupled to a second bond pad and having a second terminal end spaced from the first terminal end by a gap configured to form a spark gap between the first terminal end and the second terminal end. The apparatus may additionally or alternatively include a first die having a first ground contact and a first Through Silicon Via (TSV) and a second die having a second ground contact that is galvanically isolated from the first ground contact and a second TSV with the first TSV and the second TSV vertically aligned to form a second spark gap between the first die and the second die.
H01L 23/60 - Protection contre les charges ou les décharges électrostatiques, p. ex. écrans Faraday
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01T 1/14 - Moyens associés structurellement avec un éclateur pour le protéger contre la surcharge ou pour le déconnecter en cas de défaut
H02H 9/06 - Circuits de protection de sécurité pour limiter l'excès de courant ou de tension sans déconnexion sensibles à un excès de tension utilisant des éclateurs à étincelles
73.
TUNNEL MAGNETORESISTANCE ELEMENT AND SENSOR HAVING INCREASED MEASUREMENT RANGE
The present disclosure concerns a tunnel magnetoresistance (TMR) element comprising a tunnel barrier layer sandwiched between a reference layer having a pinned reference magnetization and a sense layer having a sense magnetization that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field. The sense magnetization comprises a stable vortex configuration having a vortex core magnetization polarity that is reversed when a vortex core polarity switching field is applied on the TMR element. The TMR element further comprises a shifting layer adjacent to the sense layer, the shifting layer having a shifting magnetization, the shifting layer being configured to induce a stray field on the sense layer and increases the vortex core polarity switching field. The present disclosure further concerns a TMR sensor comprising a plurality of the TMR elements. The TMR element and TMR sensor have improved robustness and field of application.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
H01F 1/055 - Alliages caractérisés par leur composition contenant des métaux des terres rares et des métaux de transition magnétiques, p. ex. SmCo5
74.
TUNNEL MAGNETORESISTANCE ELEMENT AND SENSOR HAVING INCREASED MEASUREMENT RANGE
The present disclosure concerns a tunnel magnetoresistance (TMR) element comprising a tunnel barrier layer sandwiched between a reference layer having a pinned reference magnetization and a sense layer having a sense magnetization that is orientable relative to the fixed reference magnetization in the presence of an external magnetic field. The sense magnetization comprises a stable vortex configuration having a vortex core magnetization polarity that is reversed when a vortex core polarity switching field is applied on the TMR element. The TMR element further comprises a shifting layer adjacent to the sense layer, the shifting layer having a shifting magnetization, the shifting layer being configured to induce a stray field on the sense layer and increases the vortex core polarity switching field. The present disclosure further concerns a TMR sensor comprising a plurality of the TMR elements. The TMR element and TMR sensor have improved robustness and field of application.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
75.
SYSTEMS, METHODS, AND TECHNIQUES FOR POSITIONING A SENSOR DEVICE
Disclosed are example systems, methods, and techniques for positioning a sensor device. In particular, described are example systems, methods, and techniques for positioning a sensor device such that the sensor device is aligned with a rotation axis of a target. Using the systems, methods, and techniques disclosed herein, a sensor device may be centered over a rotation axis of a target in an end-of-shaft sensing application. The systems, methods, and techniques disclosed herein may be used to align a sensor device with a rotation axis of a target in a manner that is more efficient than traditional approaches for calibrating a sensor device.
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
G01B 7/31 - Dispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour mesurer des angles ou des cônesDispositions pour la mesure caractérisées par l'utilisation de techniques électriques ou magnétiques pour tester l'alignement des axes pour tester l'alignement des axes
The structure includes one or more capacitors formed in metal layers of a semiconductor die with the capacitors connected in series. The dielectric thickness of the capacitors is optimized to decrease parasitic capacitance and increase the breakdown voltage of the capacitor assembly.
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
77.
METHOD AND APPARATUS FOR SENSING FLASH MEMORY OUTPUT
A read amplifier, comprising: a transistor having a first terminal and a second terminal, the second terminal being coupled to a sense node, the transistor being arranged to: (i) receive, on the second terminal, a data signal that is generated at least in part by a memory matrix, and (ii) output, on the sense node, an amplified data signal; and a feedback circuit arranged to generate, based at least in part on the data signal, a feedback signal that is applied at a gate of the transistor; and a pre-charge circuit that is configured to pre-charge the sense node to a predetermined value, such that, after the sense node is pre-charged, a voltage at the sense node settles at a value corresponding to the amplified data signal.
A relay, comprising: a housing enclosure; a first terminal; a second terminal; an armature arranged to assume one of an engaged and disengaged position, such that when the armature is in the engaged position the first terminal is electrically coupled to the second terminal by the armature, and when the armature is in the disengaged position, the first terminal is electrically isolated from the second terminal as a result of the armature being removed from at least one of the first terminal and/or the second terminal; a solenoid that is disposed inside the housing enclosure and arranged to actuate the armature between the disengaged position and the engaged position; and a position sensor that is disposed inside the housing enclosure, the position sensor being arranged to monitor a position of the armature and output an indication of whether the armature is in the disengaged position or the engaged position.
H01H 50/18 - Éléments mobiles de circuits magnétiques, p. ex. armature
G01D 5/20 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension en faisant varier l'inductance, p. ex. une armature mobile
Method for forming a magnetoresistive element by forming a sense layer having a free sense magnetization, a reference layer having a fixed reference magnetization, wherein the reference layer is formed by deposition in a Krypton atmosphere, a tunnel barrier layer between the reference layer and the sense layer, and a hard layer having a fixed reference magnetization layer opposite to that of the reference layer. The magnetoresistive element may be configured to measure an external magnetic field oriented substantially perpendicular to the plane of the reference layer. The reference magnetizations of the reference and hard layers may be oriented substantially perpendicularly to the plane of the reference and hard layers. The sense magnetization may have a vortex configuration in the absence of an external magnetic field.
H01F 41/32 - Appareils ou procédés spécialement adaptés à la fabrication ou à l'assemblage des aimants, des inductances ou des transformateursAppareils ou procédés spécialement adaptés à la fabrication des matériaux caractérisés par leurs propriétés magnétiques pour appliquer un matériau conducteur, isolant ou magnétique sur une pellicule magnétique
C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
C23C 14/14 - Matériau métallique, bore ou silicium
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
Method for forming a magnetoresistive element by forming a sense layer having a free sense magnetization, a reference layer having a fixed reference magnetization, wherein the reference layer is formed by deposition in a Krypton atmosphere, a tunnel barrier layer between the reference layer and the sense layer, and a hard layer having a fixed reference magnetization layer opposite to that of the reference layer. The magnetoresistive element may be configured to measure an external magnetic field oriented substantially perpendicular to the plane of the reference layer. The reference magnetizations of the reference and hard layers may be oriented substantially perpendicularly to the plane of the reference and hard layers. The sense magnetization may have a vortex configuration in the absence of an external magnetic field.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
81.
INTEGRATED CIRCUIT PACKAGE WITH SPLIT DIE ATTACH PADDLE
An integrated circuit package includes a lead frame with a split die-attach paddle (DAP) that supports a semiconductor die with one or more magnetic field sensing elements. The split paddle reduces magnetic reluctance for enhancing coupling to the die and reducing eddy currents. The package provides mechanical stability to prevent die tilt, limiting sensing errors and protecting the die from stress from downstream mechanical forces during test and assembly pick processes. The mechanical stability is provided by one or more leads, strip tie-bars and/or band bars.
A current sensor for sensing a current through a conductor includes a magnetic field sensing element configured to generate a magnetic field signal indicative of a magnetic field associated with the current through the conductor, a first processing path responsive to the magnetic field signal and configured to generate a first current sensor output signal, a resistive element coupled to the conductor, a second processing path coupled across the resistive element and configured to measure a voltage across the resistive element and generate a second current sensor output signal, and a shared processor configured to calibrate the first processing path and second processing path. The shared processor can be configured to generate one or more of a sensitivity calibration signal, a temperature calibration signal, an offset calibration signal, or a lifetime drift calibration signal.
Disclosed are systems, methods, and techniques for linearizing sensor device rotation angle measurements. In particular, described are systems, methods, and techniques for linearizing sensor device rotation angle measurements without knowledge of actual rotation angles of a target. That is, using systems, methods, and techniques disclosed herein, a sensor device may self-linearize rotation angle measurements of a target. In some embodiments, a linearization process may be applied continuously or periodically over time so as to address changes in the nonlinearities of a rotation angle measurement system.
G01D 5/244 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant les caractéristiques d'impulsionsMoyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques produisant des impulsions ou des trains d'impulsions
Provided are compact current sensing systems based on printed circuit boards (PCB) and/or integrated circuits (IC). Sensors are configured to detect or sense a current, such as a leakage current. Semiconductor die supporting magnetic field sensing elements are placed equidistantly and symmetrically from one or more conductors to sense a current in the conductor. A circuit may output a signal based on a difference between the outputs of the sensing elements.
G01R 15/20 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs galvano-magnétiques, p. ex. des dispositifs à effet Hall
G01R 19/00 - Dispositions pour procéder aux mesures de courant ou de tension ou pour en indiquer l'existence ou le signe
G01R 19/10 - Mesure d'une somme, d'une différence, ou d'un rapport
Method and apparatus for a 3D sensor having die Hall element clusters located on first and second die. In an embodiment, a sensor IC package includes a first die having first, second, and third Hall clusters having different axes of magnetic field sensitivity and a second die having a fourth Hall cluster having sensitivity in the first and third axes of sensitivity. The sensor provides 3D field sensing for stroke, end of shaft and side shaft sensing applications.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01D 5/14 - Moyens mécaniques pour le transfert de la grandeur de sortie d'un organe sensibleMoyens pour convertir la grandeur de sortie d'un organe sensible en une autre variable, lorsque la forme ou la nature de l'organe sensible n'imposent pas un moyen de conversion déterminéTransducteurs non spécialement adaptés à une variable particulière utilisant des moyens électriques ou magnétiques influençant la valeur d'un courant ou d'une tension
A signal encoding and decoding protocol to transmit both clock information and a data payload in a single line is disclosed. Data may be encoded in a unipolar non-return-to-zero line in which an initial pulse width determines a clock frequency, followed by a series of pulses indicating the data payload. Each clock transition following an initial synchronization pulse indicates a data bit in which the value of the bit is determined in relation to the previous bit. Edge information may indicate a change in bit value from the previous bit. If the transmission signal remains at the same level for a subsequent clock period, the bit value remains the same.
A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1/f noise.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
H01F 10/32 - Multicouches couplées par échange de spin, p. ex. superréseaux à structure nanométrique
H10N 50/20 - Dispositifs à courant commandé à polarisation de spin
88.
STRUCTURES, METHODS, AND TECHNIQUES FOR DECREASING A LATERAL DIMENSION OF TUNNELING MAGNETORESISTANCE PILLARS
Disclosed are example structures that have tunneling magnetoresistance (TMR) pillars with a decreased lateral dimension. Also described are methods and techniques for forming these structures. Also described herein are structures, and methods and techniques for forming structures, where a conductive hard mask may be provided on top of TMR pillars for direct contact with a top metal layer. Using the methods and techniques described herein, TMR pillars with a decreased lateral dimension may be utilized in structures.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
A system, comprising: a ring magnet that is coupled to a first portion of a mechanical element, the first portion extending in a first direction, the first ring magnet having npp1 pole pairs, where npp1 is an odd integer, and npp1≥3; a second ring magnet that is coupled to a second portion of a mechanical element, the second portion extending in a second direction that is opposite to the first direction, the second ring magnet having npp2 pole pairs, where npp2=4*m*npp2, m is an integer, and m≥1; first and second magnetic field sensor, the first and second magnetic field sensors being disposed at an angle of approximately 90/npp1 degrees relative to each other; and third and fourth magnetic field sensors, the third and fourth magnetic field sensors being disposed at an angle of approximately 180 degrees relative to each other.
G01L 3/10 - Dynamomètres de transmission rotatifs dans lesquels l'élément transmettant le couple comporte un arbre élastique en torsion impliquant des moyens électriques ou magnétiques d'indication
A system and method are disclosed to test signal paths within sensor signal channels by providing an additional signal channel having testing means. The additional signal channel has a test signal generator, a test signal evaluator, and a signal path that is provided in parallel to existing signal paths within the sensor. Signal paths between each sensing element and each output are manipulated by input and output path couplers so that sense signals always reach the correct outputs but the intermediary signal path(s) may be changed according to a self-test protocol. In particular, the signal path(s) may be selected for cyclical testing. The signal path under test is subjected to test signals from the test signal generator which are then evaluated by the test signal evaluator for correctness, and faults signaled. The test signals may be selected to test each signal processing function in the signal path.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
AC current sensors are described having a primary current path that is integrated in a substrate or separate from the substrate; one or more conductive loops integrated in the substrate and configured for inductive coupling with the primary current path; and an integrated circuit connected to the conductive loop(s) and configured to measure AC current in the primary current path. The one or more integrated coils or loops can include one or more twisted loops configured to provide differential sensing of current in the primary current path and reject stray magnetic fields. In some embodiments, the one or more integrated coils or loops include one or more pairs of integrated coils or loops, with one coil or loop of each pair on each side of the main current path.
G01R 15/18 - Adaptations fournissant une isolation en tension ou en courant, p. ex. adaptations pour les réseaux à haute tension ou à courant fort utilisant des dispositifs inductifs, p. ex. des transformateurs
A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer has a reference magnetization and comprises a reference SAF structure and an in-plane sensitivity axis. A SOT electrode configured to pass a SOT current adapted to switch the first reference magnetization in two opposed directions along the sensitivity axis by a spin orbit torque interaction. Also disclosed is a sensing device comprising at least one sensing branch including at least one magnetic sensor element and a sensing operation using the sensing device for sensing an external magnetic field. The magnetic sensor element allows for sensing the external magnetic field with low 1/f noise.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
93.
MULTI-SUBSTRATE TRANSFORMER PACKAGES WITH MAGNETOSTRICTION MANAGEMENT
Isolation transformer packages and structures and related methods reduce or minimize deleterious effects arising from magnetostriction during operation of the included transformer. An example transformer based integrated circuit package includes first and second substrates that include a space for receiving a magnetic core and that are joined together. A magnetic core is disposed in the space defined by the substrates, with the magnetic core including a soft ferromagnetic material. The space between surfaces of the substrates and an exterior surface of the magnetic core allows the magnetic core to expand and contract during operation. Pluralities of conductive traces of both substrates, having first and second galvanically separate groups, form first and second transformer coils disposed about the magnetic core. An injection port can be disposed in the first or second substrate to allow injection of underfill into one or more regions between the first substrate and the second substrate.
H01L 21/48 - Fabrication ou traitement de parties, p. ex. de conteneurs, avant l'assemblage des dispositifs, en utilisant des procédés non couverts par l'un uniquement des groupes ou
H01L 23/538 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre la structure d'interconnexion entre une pluralité de puces semi-conductrices se trouvant au-dessus ou à l'intérieur de substrats isolants
According to some embodiments, a sensor includes: one or more sensing elements configured to generate a magnetic field signal having a magnetic field component that varies in response to a magnetic field and an offset component contributed by the one or more sensing elements; a modulation circuit configured to modulate the magnetic field component of the magnetic field signal at a modulation frequency; an amplifier configured to receive the modulated signal and provide an amplified modulated signal having a current responsive to at least the magnetic field and the offset contributed by the one or more sensing elements; and a sample and hold circuit configured to receive the amplified modulated signal and provide a conditioned signal having a current that varies in response to the magnetic field signal and having substantially zero offset contribution from the one or more sensing elements and from the amplifier.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
H03F 3/21 - Amplificateurs de puissance, p. ex. amplificateurs de classe B, amplificateur de classe C comportant uniquement des dispositifs à semi-conducteurs
95.
TMR SENSOR HAVING VORTEX STACK TO ENHANCE LINEARITY
Methods and apparatus for devices including TMR elements with a free layer having a vortex layer to provide a magnetic vortex, a spacer layer, a reference layer, and a bias layer to offset the vortex by magnetic exchange bias. Sensor embodiments increase linearity for enhancing sensor performance.
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
Systems, structures, circuits, and methods provide coil pairs that are used with magnetic-field type current sensors. Coil pairs, with a smaller coil nested within a larger coil, can be employed with or for magnetic field/flux sensors or sensing elements to compensate for the degradation in sensitivity as the frequency of the sensed current increases. A coil pair can be integrated into or on a substrate having a field-based current sensor. In use, frequency-dependent current is induced in a larger coil that is then driven through a smaller coil which concentrates a magnetic field on the sensitive element. The larger coil is configured to provide an increasing current as the frequency of the ambient magnetic field increases and provide the increasing current to the second coil to compensate for a frequency-dependent coupling factor between the magnetic field sensor and the ambient magnetic field.
G01R 33/00 - Dispositions ou appareils pour la mesure des grandeurs magnétiques
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
97.
ASYNCHRONOUS STATE MACHINE BASED DRIVER FOR DC/DC REGULATORS
A device includes a signal generator configured to generate signals to control first and second switches coupled in a first half-bridge DC-DC converter configuration, the first and second switches being configured in a buck mode of operation or in a boost mode of operation.
H02M 1/00 - Détails d'appareils pour transformation
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
98.
Asynchronous state machine based driver for DC/DC regulators
A device includes a signal generator configured to generate signals to control first and second switches coupled in a first half-bridge DC-DC converter configuration, the first and second switches being configured in a buck mode of operation or in a boost mode of operation.
H02M 3/158 - Transformation d'une puissance d'entrée en courant continu en une puissance de sortie en courant continu sans transformation intermédiaire en courant alternatif par convertisseurs statiques utilisant des tubes à décharge avec électrode de commande ou des dispositifs à semi-conducteurs avec électrode de commande utilisant des dispositifs du type triode ou transistor exigeant l'application continue d'un signal de commande utilisant uniquement des dispositifs à semi-conducteurs avec commande automatique de la tension ou du courant de sortie, p. ex. régulateurs à commutation comprenant plusieurs dispositifs à semi-conducteurs comme dispositifs de commande finale pour une charge unique
99.
MULTIPLE-SENSITIVITY SENSOR WITH DYNAMIC OFFSET CORRECTION AND HIGH DYNAMIC RANGE
A method is provided for use in a sensor, comprising: generating a sensing signal by using one or more sensing elements; amplifying the sensing signal by using a first gain to produce, at least in part, a first amplified signal, the first amplified signal having a first offset; amplifying the sensing signal by using a second gain to produce, at least in part, a second amplified signal, the second amplified signal having a second offset; generating an adjusted signal based on the first amplified signal, the second amplified signal, the first gain, and the second gain, the adjusted signal approximating a difference between the second amplified signal and an offset of the second amplified signal; and using the adjusted signal to generate an output of the sensor.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
A magnetic field sensor comprises a die, first and second magnetic field sensing elements supported by the die, at respective spaced apart positions, and a lead frame supporting the die. The lead frame comprises a die attach segment having first and second openings formed therein, where there is no lead frame covering either magnetic field sensing element. The die attach segment includes a horizontal support portion disposed between the first and second openings, having a size configured to provide die support along a predetermined portion of at least one predetermined horizontal axis of the die. In other aspects, the lead frame comprises multiple die attach segments separated by slots, where at least one of the multiple die attach segments supports the die along its horizontal axis. At least one of the slots mitigates a current loop arising from operation of at least one of the magnetic field sensing elements.
G01R 33/07 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs à effet Hall
G01R 33/09 - Mesure de la direction ou de l'intensité de champs magnétiques ou de flux magnétiques en utilisant des dispositifs galvano-magnétiques des dispositifs magnéto-résistifs
