The present disclosure relates to the technical field of semiconductor manufacturing, and provides a monitoring device and method for an epitaxial reaction chamber. The monitoring device for an epitaxial reaction chamber comprises: a gas detector arranged at a gas inlet of the epitaxial reaction chamber and used for detecting components and flow velocity of a process gas introduced into the epitaxial reaction chamber; a timer arranged at the gas inlet of the epitaxial reaction chamber and used for recording the start time and end time of introducing the process gas into the epitaxial reaction chamber; and a processor used for determining the total deposition thickness of the epitaxial reaction chamber on the basis of data of the gas detector and the timer.
Disclosed in the embodiments of the present application are a device and method for cleaning a wafer. The device may comprise: a cleaning tank body; a first pump, the first pump being used for pumping, during a process of immersing a wafer in an etching liquid accommodated in the cleaning tank body, the etching liquid at the bottom of the cleaning tank body to a liquid level of the etching liquid accommodated in the cleaning tank body via the outside of the cleaning tank body, such that the etching liquid accommodated in the cleaning tank body integrally moves downwards so as to remain stationary with respect to the wafer; and a second pump, the second pump being used for pumping, during a process of moving the wafer out of the etching liquid accommodated in the cleaning tank body, the etching liquid at the liquid level to the bottom of the cleaning tank body via the outside of the cleaning tank body, such that the etching liquid accommodated in the cleaning tank body integrally moves upwards so as to remain stationary with respect to the wafer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
3.
METHOD AND APPARATUS FOR IDENTIFYING WAFER EDGE DEFECT TYPE, MEDIUM AND WAFER PROCESSING METHOD
The embodiments of the present disclosure disclose a method and apparatus for identifying a wafer edge defect type, a medium and a wafer processing method. The method for identifying a wafer edge defect type comprises: receiving a collected edge image of a wafer under test; according to image features of the edge image, determining an area to be identified having a defect; acquiring morphology features of the defect present in said area; and, according to the morphology features and features of said area, determining the type of the defect present in said area.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
4.
METHOD AND APPARATUS FOR DYNAMICALLY ADJUSTING STANDBY POSITION OF OVERHEAD CRANE, MEDIUM, AND SYSTEM
A method and an apparatus for dynamically adjusting a standby position of an overhead crane, a medium, and a system. The method comprises: receiving a conveying command issued by a manufacturing execution system in response to a material request of a target device; by means of the conveying command, determining the starting position of a material, the position of the target device, and optimal path information, and splitting the conveying command according to the starting position of the material, to generate a first conveying instruction; generating a first scheduling instruction and a second conveying instruction according to the optimal path information and the position of the target device, respectively, and issuing the first scheduling instruction to an overhead crane control system so as to group all standby positions of the overhead crane in advance, and set the standby position and the driving distance of an idle overhead crane in each group; sending the first conveying instruction to a storage system, so as to instruct that the material be conveyed to a device loading port from a target material initial position; and sending the second conveying instruction to the overhead crane control system to convey the material from the device loading port to the target device.
A control method and apparatus (800) for conveying of a semiconductor material, and a device, a medium and a product, which are applied to a conveying device controller. The method comprises: in response to a first conveying command, a conveying device controller controlling a conveying device to acquire a target semiconductor material from a warehouse (S202), wherein the first conveying command comprises conveying the target semiconductor material from the warehouse to a target loading port of a first process device; the conveying device controller acquiring from the first process device the loading port state of the target loading port of the first process device (S204); and when the loading port state is abnormal, the conveying device controller controlling the conveying device to stop executing the first conveying command (S206).
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
6.
SINGLE CRYSTAL FURNACE AND PREPARATION METHOD FOR MONOCRYSTALLINE SILICON
A single crystal furnace and a preparation method for monocrystalline silicon, relating to the technical field of semiconductor manufacturing. The single crystal furnace comprises a furnace body; a crucible supporting assembly is arranged in the furnace body; a crucible is arranged at the upper part of the crucible supporting assembly; a flow guide tube is arranged directly above the crucible; a heater is arranged between the inner wall of the furnace body and the periphery of the crucible; a seed crystal pulling mechanism is arranged at the top of the furnace body. The single crystal furnace further comprises: a water cooling structure located on the side of the flow guide tube away from the crucible supporting assembly, the water cooling structure comprising a plurality of mutually independent water cooling areas that are sequentially arranged in the direction away from the flow guide tube; and a mass flow controller used for respectively controlling the flow and the temperature of cooling water in different water cooling areas.
Provided in the present disclosure are a silicon wafer tray and a semiconductor process apparatus, belonging to the technical field of semiconductor manufacturing. The silicon wafer tray is used for carrying a silicon wafer in a low-temperature oxide (LTO) process. The silicon wafer tray comprises a first surface for carrying the silicon wafer and a second surface opposite the first surface, wherein the second surface is provided with a first recess that is recessed towards the first surface.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
8.
APPARATUS AND METHOD FOR CALIBRATING POSITION OF SILICON WAFER RELATIVE TO BASE, AND EPITAXIAL DEVICE
Embodiments of the present application disclose an apparatus and method for calibrating the position of a silicon wafer relative to a base, and an epitaxial device. The method comprises: measuring a first distance and a second distance between the periphery of a base and the periphery of a silicon wafer along the first diameter of the base, and a third distance and a fourth distance between the periphery of the base and the periphery of the silicon wafer along the second diameter of the base perpendicular to the first diameter; on the basis of the first distance, the second distance, a first reference distance, and a second reference distance, acquiring a first movement direction and a first movement distance that are used for moving the silicon wafer in the direction of the first diameter to be aligned with a reference position in the direction of the second diameter; on the basis of the third distance, the fourth distance, a third reference distance, and a fourth reference distance, acquiring a second movement direction and a second movement distance that are used for moving the silicon wafer in the direction of the second diameter to be aligned with a reference position in the direction of the first diameter; and moving the silicon wafer according to the first movement direction and the first movement distance, and moving the silicon wafer according to the second movement direction and the second movement distance.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
9.
Silicon material processing apparatus, silicon ingot production equipment, and silicon material processing method
A silicon material processing apparatus includes a feed assembly, a scanning assembly, a controller, and a loading assembly. The feed assembly is used for conveying a silicon material and includes a feeding area, a scanning area, and a loading area sequentially arranged along the conveying direction. The silicon material to be conveyed is added to the feeding assembly in the feeding area. The scanning assembly is arranged correspondingly to the scanning area and is used for collecting silicon material information of a silicon material that is located in the scanning area. The silicon material information includes one or more of a shape characteristics and a size characteristics of the silicon material. The controller is connected with the scanning assembly and is used for generating a loading strategy according to the silicon material information.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 15/26 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using television detectorsStabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using photo or X-ray detectors
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
10.
Method and system for positioning center of V-type notch of wafer, and computer storage medium
A method is for positioning a center of a V-type notch of a wafer. The method includes: determining, based on collected edge data of a V-type notch of a wafer, a center of a concentric circle corresponding to edges of the V-type notch; and judging, based on a position relation between the center and a set reference scale line, whether the V-type notch is at a preset target center position. The method also includes determining, based on the position relation between the center and the set reference scale line, a rotation direction and rotation angle of the wafer when the V-type notch is out of the preset target center position; and driving, according to the rotation direction and rotation angle of the wafer, the wafer to rotate until the V-type notch is rotated to the preset target center position.
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
11.
EPITAXIAL WAFER FABRICATION DEVICE, AND EPITAXIAL WAFER FABRICATION METHOD AND APPARATUS
An epitaxial wafer fabrication device, and an epitaxial wafer fabrication method and apparatus. The epitaxial wafer fabrication device comprises: a reaction chamber; and a gas input pipeline and an exhaust pipeline, which are provided in the reaction chamber, wherein the exhaust pipeline is configured to discharge gas from the reaction chamber; and the gas input pipeline comprises a main input pipeline and an auxiliary input pipeline, which are independently controlled, the main input pipeline being configured to input doping gas and silicon source gas into the reaction chamber, and the auxiliary input pipeline being configured to input doping gas into the reaction chamber.
An apparatus for regulating at least one hot zone for growing a silicon single crystal which is arranged inside a crystal puller includes an insulator, a first control unit and a second control unit. The insulator has a top on which a reflector is fixedly arranged. The first control unit is configured to keep a position of a crucible in a height direction unchanged during growth of the silicon single crystal. The second control unit is configured to move the insulator along a vertical direction during growth of the silicon single crystal, so as to keep a distance between a bottom of the reflector and a liquid surface of silicon melt constant.
Provided in the present disclosure is a crystal-bar manufacturing management method. The crystal-bar manufacturing management method comprises the following steps: testing thin sheets obtained by means of cutting a pulled crystal bar into a plurality of crystal ingots and performing cutting on each crystal ingot from head to tail, so as to determine quality parameters of each crystal ingot; and evaluating the quality grade of each crystal ingot on the basis of the quality parameters and a pulling process parameter that corresponds to the crystal ingot. The present disclosure further relates to a crystal-bar manufacturing management system.
The present disclosure discloses a heater in a Hot-Zone of a single crystal pulling apparatus and a single crystal pulling apparatus. The heater in the Hot-Zone of the single crystal pulling apparatus includes a side-main heater and an auxiliary heater. Each of the side-main heater and the auxiliary heater is a cylindrical structure with openings at two ends thereof. Each of the side-main heater and the auxiliary heater includes a top open end and a bottom open end. The auxiliary heater is sleeved around the side-main heater, and the top open end of the auxiliary heater extends out of the top open end of the side-main heater.
XI' AN ESWIN MATERIAL TECHNOLOGY CO., LTD. (China)
XI' AN ESWIN SILICON WAFER TECHNOLOGY CO., LTD. (China)
Inventor
Chen, Fan
Zhang, Pengju
Guo, Chaochao
Abstract
A silicon material processing apparatus, a silicon rod production device, and a silicon material processing method. The silicon material processing apparatus comprises: a feed assembly, which comprises a feeding area, a scanning area, and a loading area, a scanning assembly being arranged correspondingly to the scanning region and being used for collecting silicon material information of a silicon material that is located in the scanning region, and the silicon material information comprising one or more of a shape feature and a size feature of the silicon material; a controller, which is connected to the scanning assembly and is used for generating a loading strategy according to the silicon material information; and a loading assembly, which is arranged correspondingly to the loading area and is used for moving, according to the loading strategy, the silicon material that is located in the loading region to a target position.
C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
A thermal field adjusting device and method for single crystal growth. The thermal field adjusting device comprises: a thermal insulation cylinder, on the top of which a flow guide cylinder is fixedly mounted; and a first control unit and a second control unit, wherein the first control unit is configured to control, during a crystal pulling process, the height position of a crucible to be unchanged; and the second control unit is configured to drive, during the crystal pulling process, the thermal insulation cylinder to move up and down in a vertical direction, so that the distance between the bottom of the flow guide cylinder and the liquid level of molten silicon is always kept consistent.
Disclosed in the embodiments of the present application are a method and a system for positioning the center of a V-shaped notch of a wafer, and a computer storage medium. The positioning method comprises: according to acquired edge data of a V-shaped notch of a wafer, determining the center of a concentric circle corresponding to the edge of the V-shaped notch; on the basis of the position between the center of the circle and a set reference scale line, determining whether the V-shaped notch is in a set target center position; when the V-shaped notch is not in the set target center position, determining a rotation direction and a rotation angle of the wafer on the basis of the position between the center of the circle and the set reference scale line; and, according to the rotation direction and the rotation angle of the wafer, driving the wafer to rotate, so that the V-shaped notch rotates to the set target center position.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
18.
Cylinder assembly for improving region of defect-free growth of crystal ingot for single crystal pulling apparatus and single crystal pulling apparatus
A cylinder assembly of a single crystal pulling apparatus and a single crystal pulling apparatus are provided in the present disclosure. The cylinder assembly includes an inner cylinder, an outer cylinder, an annular plate and a sleeve. The inner cylinder has a shape of inverted conical. An upper end of the inner cylinder is connected to an upper end of the outer cylinder. A lower end of the outer cylinder is hermetically connected to an outer edge of the annular plate. A lower end of the inner cylinder is fixedly connected to an upper surface of the annular plate. The sleeve passes through and is fixed in an annular opening of the annular plate.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
C30B 15/14 - Heating of the melt or the crystallised materials
An assembly sleeve of a single crystal pulling apparatus, and the single crystal pulling apparatus are provided. The assembly sleeve includes inner and outer cylinders and a bottom cylinder. The outer cylinder is provided with openings at both ends and sleeved onto the inner cylinder. The bottom cylinder is arranged at the opening at a lower end of the outer cylinder, and includes an annular plate and a lower cylinder. Each of the inner lower cylinders is of an inverted-cone shape, an upper end of the inner cylinder is connected to an upper end of the outer cylinder, an outer edge of the annular plate is hermetically connected to the lower end of the outer cylinder, an inner edge of the annular plate is connected to an upper end of the lower cylinder, and a lower end of the inner cylinder is fixedly connected to an upper surface of the annular plate.
The present disclosure provides a single crystal pulling apparatus Hot-Zone structure, a single crystal pulling apparatus and a crystal ingot. The single crystal pulling apparatus Hot-Zone structure is applied to a single crystal pulling apparatus. The single crystal pulling apparatus includes a puller body and a crucible provided in the center of the puller body. The single crystal pulling apparatus Hot-Zone structure includes: a side heater provided in a periphery of the crucible, and a diversion assembly provided between the side heater and the crucible, and configured to form a gas flow passage with an outer wall of the crucible, to discharge a gas to the outside of the puller body.
Provided are a hot zone heater of a single crystal furnace, and the single crystal furnace. The hot zone heater of the single crystal furnace comprises a lateral main heater and an auxiliary heater. The lateral main heater and the auxiliary heater are both of a cylindrical structure with two open ends. The lateral main heater and the auxiliary heater each comprise a top opening end and a bottom opening end opposite to each other. The auxiliary heater is sleeved outside the lateral main heater, and the top opening end of the auxiliary heater extends out of the top opening end of the lateral main heater.
A combined sleeve of a single-crystal furnace, and a single-crystal furnace. The combined sleeve comprises: an inner barrel, an outer barrel, an annular base plate and a casing pipe, wherein the inner barrel is inverted-taper-shaped; the upper end of the inner barrel is connected to the upper end of the outer barrel; the lower end of the outer barrel is in sealing connection with an outer edge portion of the annular base plate; the lower end of the inner barrel is fixedly connected to an upper surface of the annular base plate; and the casing pipe passes through and is fixed in an annular opening of the annular base plate.
Disclosed are a combined sleeve of a single crystal furnace and the single crystal furnace. The combined sleeve comprises: an inner cylinder, an outer cylinder and a bottom cylinder, wherein the outer cylinder is provided with an upper opening and a lower opening, the outer cylinder is arranged on the periphery of the inner cylinder in a sleeving manner, and the bottom cylinder is arranged at an opening at the bottom end of the outer cylinder; the bottom cylinder comprises an annular bottom disc and a lower cylinder; the inner cylinder and the lower cylinder are both of inverted cone shapes; the upper end of the inner cylinder is connected to the upper end of the outer cylinder; the outer edge of the annular bottom disc is hermetically connected to the lower end of the outer cylinder; an inner edge of the annular bottom disc is connected to the upper part of the lower cylinder; and the lower end of the inner cylinder is fixedly connected to the upper surface of the annular bottom disc.
A thermal field structure for a single crystal furnace, a single crystal furnace, and a crystal bar. The thermal field structure for a single crystal furnace can be used in a single crystal furnace. The single crystal furnace comprises a furnace body and a crucible arranged in the middle of the inside of the furnace body. The thermal field structure for a single crystal furnace comprises a side heater arranged on the periphery of the crucible; and a deflector assembly arranged between the side heater and the crucible for forming a gas flow channel with the outer wall of the crucible to discharge the gas from the furnace body.
patents
