Abstract

A semiconductor package includes a lead frame, a chip, and a molding encapsulation. The lead frame comprises a die paddle, a first plurality of leads, additional one or more leads, a second plurality of leads, a first tie bar, a second tie bar, a third tie bar, and a fourth tie bar. A respective end surface of each lead of the first plurality of leads, the additional one or more leads, and the second plurality of leads is plated with a metal. A respective end surface of the first tie bar, the second tie bar, the third tie bar, and the fourth tie bar is not plated with the metal. A method for fabricating a semiconductor package includes the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, applying a trimming process, applying a plating process, and applying a singulation process.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

An interconnected base plate comprises a metal layer, a plurality of metal pads, and a molding encapsulation. The mold compound layer encloses a majority portion of the plurality of metal pads 240. A respective top surface of each of the plurality of metal pads is exposed from a top surface of the molding encapsulation. The respective top surface of said each of the first plurality of metal pads and the top surface of the mold compound layer are co-planar. A power module comprises the interconnected base plate, a plurality of chips, a plurality of bonding wires, a plurality of terminals, a plastic case, and a module-level molding encapsulation. A method, for fabricating an interconnected base plate, comprises the steps of forming a plurality of metal pads; loading a metal layer; forming a molding encapsulation; and applying a singulation process.

IPC Classes  ?

• H01L 23/492 - Bases or plates
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 23/053 - ContainersSeals characterised by the shape the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/16 - Fillings or auxiliary members in containers, e.g. centering rings
• H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings

Abstract

A semiconductor device comprises a semiconductor substrate, a plurality of metal layers, an adhesive layer, a compound layer, and a plurality of contact pads. A thickness of the semiconductor substrate is in a range from 15 μm to 35 μm. A thickness of the compound layer is larger than the thickness of the semiconductor substrate. A coefficient of thermal expansion of the compound layer is less than or equal to 9 ppm/° C. A glass transition temperature of the compound layer is larger than 150° C. The plurality of metal layers comprises a first titanium layer, a first nickel layer, a silver layer, a second nickel layer, and a metallic layer. In a first example, the metallic layer is a second titanium layer. In a second example, the metallic layer is a Titanium Nitride (TiN) layer.

IPC Classes  ?

• H01L 23/482 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
• H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Abstract

A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second FET, an integrated circuit (IC), a plurality of bond wires, and a molding encapsulation. The lead frame comprises a first die paddle and a second die paddle. The first FET is flipped and attached to the first die paddle. The second FET is flipped and attached to the second die paddle. A method comprises the steps of providing a lead frame comprising a first die paddle and a second die paddle; applying a first adhesive layer; mounting a first FET and a second FET; applying a second adhesive layer; mounting an IC; applying bonding wires; forming a molding encapsulation; and applying a singulation process so as to form a plurality of semiconductor packages.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 29/772 - Field-effect transistors

Abstract

A device for resistor lossless current sensing includes a first power transistor, a sense transistor and current sense conversion circuit. The first sense transistor has its gate conductively coupled with a gate of the first power transistor and its drain conductively coupled with the drain of the first power transistor. The current sense conversion circuit is configured to convert a current output from the first sense transistor to an output voltage. The current output from the first sense resistor and output voltage are proportional to the current from the current input to the device and the current sense conversion circuit generates the output voltage which is not in a current path through the first power transistor.

IPC Classes  ?

• H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
• G01R 31/3842 - Arrangements for monitoring battery or accumulator variables, e.g. SoC combining voltage and current measurements
• H01M 10/42 - Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
• H01M 10/44 - Methods for charging or discharging
• H02H 7/18 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteriesEmergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for accumulators

Abstract

A circuit for providing temperature compensation to sense signals in a single-ended DC resistance (DCR) sensing network for a multiphase switching power supply includes a temperature compensation calculator circuit generating a compensation adjust signal indicative of a sensed temperature; a compensating impedance network receiving the positive sense signals for all the phases and generating a correction signal for each phase in response to at least the positive sense signal for each phase and the compensation adjust signal; an average circuit coupled to average the correction signals of all phases, where copies of the average correction signal are applied to modify the positive sense signals; and an amplifier circuit receiving a summed positive sense signal being the sum of the modified positive sense signals for all the phases and a summed negative sense signal to generate an output signal having substantially zero temperature coefficient over the first frequency range.

IPC Classes  ?

• H03F 1/30 - Modifications of amplifiers to reduce influence of variations of temperature or supply voltage
• H03F 1/56 - Modifications of input or output impedances, not otherwise provided for
• H03F 3/45 - Differential amplifiers

Abstract

A controller for a switching regulator incorporates a protection circuit to limit the negative current to a negative current threshold while operating the switching regulator to sink current from the load without damage to the power switches. In some embodiments, in response to the negative current reaching the negative current threshold, the protection circuit turns off the low-side power switch and turns on the high-side power switch for a maximum time period. In the event the negative current has not recovered, the high-side power switch and the low-side power switch are both turned off while the high-side power switch conducts the negative current through the high-side power switch body diode. When the negative current recovers to a recovery level, the low-side power switch can then be turned on. The protection circuit repeats the process each time the negative current is detected to have reached the negative current threshold.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/00 - Details of apparatus for conversion
• H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
• H02M 1/32 - Means for protecting converters other than by automatic disconnection

Abstract

A transient voltage suppressor (TVS) device includes a silicon controlled rectifier (SCR) as the clamp device between a high-side steering diode and a low-side steering diode. The SCR includes alternating emitter and base regions arranged interleaving in a direction along a major surface of a semiconductor layer and orthogonal to a current path of the SCR. The TVS device realizes low capacitance and high holding voltage at the protected node.

IPC Classes  ?

• H10D 89/60 - Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
• H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage

Abstract

A semiconductor package comprises a first device and a second device. The structure of the first semiconductor device is similar to that of the second semiconductor device. The first semiconductor device comprises a lead frame strip, a first plurality of field effect transistors (FETs), a first plurality of clips, a second plurality of FETs, a second plurality of clips, and a first molding encapsulation. A method is applied to fabricate a plurality of semiconductor packages. The method comprises the steps of providing a lead frame strip, attaching a first plurality of FETs, attaching a first plurality of clips, attaching a second plurality of FETs, attaching a second plurality of clips, and forming a molding encapsulation.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A transistor device comprising a semiconductor substrate composition a first gate electrode material disposed over a portion of a surface of the substrate composition wherein the first gate electrode material includes a first gate electrode contact region near at least one edge of the substrate composition. A gate insulating material is located over the first gate electrode material including two or more first gate vias through the gate insulating material in the first gate electrode contact region wherein the two or more first gate vias expose the first gate electrode material. A transistor device package includes a gate controller integrated circuit including a first transistor gate driver output node. A first gate conductive redistribution material connects the first gate electrode material of the first transistor device to the output node of the gate controller integrated circuit through the two or more first gate vias.

IPC Classes  ?

• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 23/498 - Leads on insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Abstract

A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises a top plate, a plurality of drain pads, a plurality of slanted sections, a gate pad, and a plurality of source pads. The top plate of the lead frame comprises a thicker region and a thinner region. Each slanted section of the plurality of slanted sections connects a respective drain pad of the plurality of drain pads to the top plate. A respective side surface of each drain pad of the plurality of drain pads is exposed from a side surface of the molding encapsulation. A respective bottom surface of each drain pad of the plurality of drain pads is exposed from a bottom surface of the molding encapsulation. A top surface of the thicker region is exposed from a top surface of the molding encapsulation.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A semiconductor package comprising a lead frame, a low side field-effect transistor (FET), a high side FET, a metal clip, an interposer, an integrated circuit (IC) controller, and a molding encapsulation. A method, for fabricating a semiconductor package, comprises the steps of: providing a lead frame; attaching a low side FET and a high side FET; mounting a metal clip; attaching an interposer; mounting an IC controller, forming a molding encapsulation; and applying a singulation process.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/552 - Protection against radiation, e.g. light

Abstract

A power converter incorporating a synchronous rectifier implements adaptive gate voltage regulation for fast turn-off of the synchronous rectifier. In some embodiments, the adaptive gate voltage regulation circuit detects a voltage indicative of a drain current of the synchronous rectifier in each SR conduction cycle and monitors a slope of the detected voltage indicative of a rate of decrease of the drain current of the synchronous rectifier. The adaptive gate voltage regulation circuit further selects a gate discharge current as a function of the slope of the detected voltage to apply to the gate terminal of the synchronous rectifier.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/36 - Means for starting or stopping converters

Abstract

A multiple gate transistor and method of its manufacture are described. The transistor comprises a common substrate, a source, a drain, a body, a first gate electrode and a second gate electrode. The first gate electrode and the second gate electrode are colinearly aligned along a horizontal plane of the common substrate and are separated by a dielectric wall. The dielectric wall provides electrical isolation between the first gate electrode and the second gate electrode.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/40 - Electrodes
• H01L 29/66 - Types of semiconductor device

Abstract

Apparatus and associated methods relate to circuit load balancing in a multi-phase power supply system (MPPSS). In an illustrative example, a MPPSS may include multiple power phases, each driven by a corresponding power phase driver (e.g., a DRMOS). A controller, for example, may include multiple current balancing inputs, each corresponding to one of the power phases. For example, the current balancing inputs may be generated by a dual mode current sensing circuit (DMCSC). For example, in a data collection mode of a power phase, the DMCSC may store information of an output current. In a sensing mode of the power phase, the DMCSC may generate a current balancing input to the controller based on a direct current resistance of the current sensing circuit and an active resistance in the low side driver circuit. Various embodiments may advantageously measure current imbalance in a cost effective manner.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• G01R 19/00 - Arrangements for measuring currents or voltages or for indicating presence or sign thereof

Abstract

A trench MOSFET device implements a trench source/body contact structure and includes a first MOSFET section and a second MOSFET section where the first MOSFET section has a body contact resistance lower than a body contact resistance of the second MOSFET section. In some embodiments, the first MOSFET section includes trench source/body contacts to make electrical contact with the source region and with a body contact doped region having a first doping level. In one embodiment, the second MOSFET section includes trench source/body contacts that contacts only the source region. In another embodiment, the second MOSFET section includes trench source/body contacts to make electrical contact with the source region and with a second body contact doped region having a second doping level lower than the first doping level. In some embodiments, the first MOSFET section has a transistor area much smaller than the transistor area of the second MOSFET section.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/66 - Types of semiconductor device
• H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
• H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit

Abstract

A chip scale semiconductor package comprises a silicon layer, a back side metal layer, and a plurality of front side pads. Each of the plurality of front side pads comprises a respective copper member and a respective solder member. A method comprises the steps of: providing a wafer; grinding the back side of the wafer forming a peripheral ring; applying a metallization process to a grinded surface; removing the peripheral ring; forming a front side seed layer; forming a front side photoresist layer; applying a photolithography process; applying a front side copper plating process; applying a front side solder plating process; stripping the front side photoresist layer; etching the front side seed layer; and applying a singulation process.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/498 - Leads on insulating substrates

Abstract

A semiconductor package comprises a semiconductor substrate, a plurality of contact pads, a plurality of metal bumps, a metal layer, and a molding encapsulation. A thickness of the semiconductor substrate is less than 35 microns. A first method comprises the steps of providing a device wafer; attaching a first carrier; applying a thinning process; forming a metal layer; applying a first tape; removing the first carrier; applying a first singulation process; removing the first tape; attaching a second carrier; forming a molding encapsulation; removing the second carrier; forming a plurality of metal bumps; applying a second tape; and applying a singulation process and removing the second tape. A second method comprises the steps of providing a device wafer; attaching a carrier; applying a thinning process; forming a metal layer; forming a molding encapsulation; removing the carrier; forming a plurality of metal bumps; and applying a singulation process.

IPC Classes  ?

• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A semiconductor package comprises a semiconductor substrate, a plurality of contact pads, a seed layer, a first thick metal layer, a second thick metal layer, and a coating metal layer. Direct attachment of the first thick metal layer and the second thick metal layer comprises bonded metal atoms. The first thick metal layer and the second thick metal layer are bonded by an SAB process. A method comprises the steps of providing an upper device portion, providing a lower carrier portion, applying an SAB process, applying a de-bonding process, applying a tape, applying a singulation process, and removing the tape.

IPC Classes  ?

• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

A semiconductor package comprises two or more chips, a first molding layer, a second molding layer, a third molding layer, a fourth molding layer, a bottom redistribution layer (RDL), a middle RDL, and a top RDL. The two or more chips comprise a first chip and a second chip. The top RDL comprises a first copper plate and a second copper plate. A plurality of vias electrically connect the second copper plate to the second chip. A method comprises the steps of preparing two or more chips; forming a chip-level molding layer; forming a middle RDL; forming a lower-level molding layer; forming a bottom RDL; forming a lowest-level molding layer; forming a top RDL; and forming a top-level molding layer so as to fabricate a semiconductor package.

IPC Classes  ?

• H01L 23/498 - Leads on insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A protection structure for a power transistor includes one or more pairs of back-to-back pn junction diodes formed in a trench polysilicon layer provided in trenches formed in a semiconductor substrate. At least a portion of the trench polysilicon layer protrudes above the top surface of the semiconductor substrate. Alternating N-type doped regions and P-type doped regions are formed in the trench polysilicon layer along a length of the trench. The protection structure, when coupled across the gate and source terminals of the power transistor can be advantageously applied to protect the power transistor from high voltage ESD events.

IPC Classes  ?

• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 29/66 - Types of semiconductor device

Abstract

A transient voltage suppressing (TVS) device including a first silicon-controlled rectifier and a voltage clamp having a first terminal and a second terminal. The first terminal is connected to a cathode of the first silicon-controlled rectifier.

IPC Classes  ?

• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier

Abstract

A reverse conducting IGBT comprising a substrate having a top side and a back side opposite the top side, one or more IGBT top side cells, one or more diode top side cells including, an IGBT back side collector region is formed in the back side of the substrate underneath the one or more IGBT top side cells, and a boundary area formed in the back side of the substrate underneath a portion of the one or more diode top side cells.

IPC Classes  ?

• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 29/40 - Electrodes
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/861 - Diodes

Abstract

Apparatus and associated methods relate to a post temperature calibration translation circuit (PTCTC) configured to generate a signal corresponding to a predetermined temperature voltage translation relationship (TVTR). In an illustrative example, the PTCTC may be coupled to a motor controller including a control logic to regulate a power input to a motor based on the TVTR. The PTCTC further includes an input port configured to receive a temperature sensor output based on a predetermined transfer function. At least one analog corrective translation circuit (ACTC), for example, may generate temperature input signals to the motor power controller based on the temperature sensor output. The temperature input signals are generated based on a calibrated transfer function such that the temperature input signals substantially match an output according to the TVTR. Various embodiments may advantageously avoid modification of the control logic when the predetermined transfer function is altered.

IPC Classes  ?

• H02P 29/68 - Controlling or determining the temperature of the motor or of the drive based on the temperature of a drive component or a semiconductor component
• G01K 15/00 - Testing or calibrating of thermometers

Abstract

A power MOSFET drain-source on resistance (Rdson) compensation device comprises circuitry configured to receive an input signal proportional to a voltage drop across a power MOSFET, a temperature dependent information and a gate-source voltage dependent information. The circuitry includes control logic and a first linear discrete voltage divider, wherein the first linear discrete voltage divider is configured to output a compensated voltage based on an at least one compensating control signal from the control logic that is based on at least one of the temperature dependent information or gate-source voltage dependent information.

IPC Classes  ?

• G01R 15/04 - Voltage dividers
• G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
• G01R 31/26 - Testing of individual semiconductor devices

Abstract

A power converter incorporating a synchronous rectifier implements adaptive gate voltage regulation for fast turn-off of the synchronous rectifier. In some embodiments, the adaptive gate voltage regulation circuit and method monitors the slope of the synchronous rectifier current during the on period of the synchronous rectifier. In response to detecting the synchronous rectifier current decreasing rapidly, a larger gate discharge current is applied to quickly discharge the synchronous rectifier gate voltage. In response to detecting the synchronous rectifier current decreasing more moderately, a smaller gate discharge current is applied to discharge the synchronous rectifier gate voltage in a moderate manner. When the synchronous rectifier can be turned off quickly, large reverse current and large drain voltage spike at the synchronous rectifier is avoided. The adaptive gate voltage regulation circuit and method is particularly useful when the power converter is operated in the discontinuous conduction mode.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/36 - Means for starting or stopping converters

Abstract

A device, system, and method for inductor current sensing in a Switch Mode Power Supply (SMPS) are described. An input node signal indicating a voltage level at a switch node is sampled at a first time point and a second time point. An artificial ramp signal is generated and adjusted based on the first sampled node voltage and the second sampled node voltage to generate an output ramp signal having a triangular wave form with a rising slope proportional to the rising slope of the inductor current and a falling slope proportional to the falling slope of the inductor current.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/00 - Details of apparatus for conversion

Abstract

A power converter incorporating a synchronous rectifier implements adaptive turn-off voltage control for fast turn-off of the synchronous rectifier in the continuous conduction mode. In some embodiments, the synchronous rectifier turn off detection threshold is adaptively changed as a function of the detected operation mode of the power converter. In response to detecting the power converter being operated in the continuous conduction mode, the synchronous rectifier turn off detection threshold is set to a voltage value farther away from zero volt as compared to the nominal turn off detection threshold. In this manner, the synchronous rectifier can be turned off earlier while in the continuous conduction mode. When the synchronous rectifier can be turned off quickly, large reverse current or negative current as well as large drain voltage spike at the synchronous rectifier can be avoided. The reliability of the synchronous rectifier and the power converter is improved.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/36 - Means for starting or stopping converters

Abstract

Apparatus and associated methods relate to a Source Terminal Replication Compensation Circuit for simulating an accurate fraction of a load current. In an illustrative example, a Source Terminal Replication Compensation Circuit (STRCC) may be connected to a motor driving circuit. The STRCC, for example, may include a simulation transistor configured to have a simulated structure of a main transistor in a motor driving circuit. The STRCC may include, for example, a disturbance rejection module (DRM). The DRM may be connected to a source terminal of the sense transistor, and a source terminal of the main transistor. When the DRM is connected to a current sensing resistor, a sense current is generated as a predetermined fraction of a load current of the motor driving circuit, wherein the predetermined fraction is less than 1%. Various embodiments may advantageously reduce heat dissipations at the current sensor resistor.

IPC Classes  ?

• G01R 19/165 - Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
• H02P 6/28 - Arrangements for controlling current
• H02P 27/08 - Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters with pulse width modulation
• H02K 7/14 - Structural association with mechanical loads, e.g. with hand-held machine tools or fans

Abstract

A semiconductor package includes a lead frame, a low side field-effect transistor (FET), a high side FET, a metal clip, and a molding encapsulation. The low side FET is flipped and is attached to a first die paddle of the lead frame. The lead frame comprises one or more voltage input (Vin) leads; a gate lead; one or more switching node (Lx) leads; a first die paddle; a second die paddle; and an end paddle. Each of an exposed bottom surface of the one or more Lx leads is directly connected to an exposed bottom surface of the end paddle. A longitudinal direction of an exposed bottom surface of the gate lead is perpendicular to a longitudinal direction of each of the exposed bottom surface of the one or more Lx leads. An entirely of each of the one or more Vin leads is of the full thickness.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A power device, circuit and method of making are described. The power device circuit includes a semiconductor substrate composition having a substrate layer of a first conductivity type wherein the first conductivity type is opposite a second conductivity type. Two or more lateral double diffused metal oxide semiconductor (LDMOS) devices are formed in the substrate layer and integrated into an isolation region of a high voltage well, wherein each LDMOS is isolated from a power device substrate area by an isolator structure formed from the substrate layer. One or more boost structures are integrated into the isolation region of the high voltage well wherein the one or more boost structures are in contact with the high voltage well and extend into the isolation region of the high voltage well.

IPC Classes  ?

• H03K 3/011 - Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
• H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/40 - Electrodes

Abstract

A semiconductor package includes a lead frame, a chip, and a molding encapsulation. The lead frame comprises a die paddle, a first plurality of leads, additional one or more leads, a second plurality of leads, a first tie bar, a second tie bar, a third tie bar, and a fourth tie bar. A respective end surface of each lead of the first plurality of leads, the additional one or more leads, and the second plurality of leads is plated with a metal. A respective end surface of the first tie bar, the second tie bar, the third tie bar, and the fourth tie bar is not plated with the metal. A method for fabricating a semiconductor package includes the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, applying a trimming process, applying a plating process, and applying a singulation process.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation. A buck converter comprises a smart power stage (SPS) network and an E-fuse solution network. The SPS network comprises a high side switch, a low side switch, and a gate driver. A drain of the low side switch is coupled to a source of the high side switch via a switch node. The gate driver is coupled to a gate of the high side switch and a gate of the low side switch. The E-fuse solution network comprises a sense resistor, an E-fuse switch, an E-fuse integrated circuit (IC), and an SD circuit.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/495 - Lead-frames
• H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
• H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
• H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts
• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

Abstract

A power semiconductor package comprises a lead frame, a semiconductor chip, and a molding encapsulation. The lead frame comprises an elevated section comprising a source section; a drain section; and a plurality of leads. The semiconductor chip includes a metal-oxide-semiconductor field-effect transistor (MOSFET) disposed over the lead frame. The semiconductor chip comprises a source electrode, a drain electrode, and a gate electrode. The source electrode of the semiconductor chip is electrically and mechanically connected to the source section of the elevated section of the lead frame. The semiconductor chip is served as a low side field-effect transistor as a flipped-chip connected to a heat sink by a first thermal interface material. A high side field-effect transistor is connected to the heat sink by a second thermal interface material. The low side field-effect transistor and the high side field-effect transistor are mounted on a printed circuit board.

IPC Classes  ?

• H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
• H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
• H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
• H05K 1/18 - Printed circuits structurally associated with non-printed electric components

Abstract

A controller for a switching regulator incorporates a protection circuit to limit the negative current to a negative current threshold while operating the switching regulator to sink current from the load without damage to the power switches. In some embodiments, in response to the negative current reaching the negative current threshold, the protection circuit turns off the low-side power switch and turns on the high-side power switch for a maximum time period. In the event the negative current has not recovered, the high-side power switch and the low-side power switch are both turned off while the high-side power switch conducts the negative current through the high-side power switch body diode. When the negative current recovers to a recovery level, the low-side power switch can then be turned on. The protection circuit repeats the process each time the negative current is detected to have reached the negative current threshold.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/00 - Details of apparatus for conversion
• H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
• H02M 1/32 - Means for protecting converters other than by automatic disconnection

Abstract

A power module includes a lead frame, a substrate mounted on the lead frame, a first anchor pad, a second anchor pad, a plurality of die pads, and a plurality of transistor dies. The lead frame includes a first lead frame anchored bar attached to the first anchor pad, and a second lead frame anchored bar attached to the second anchor pad. The power module may include a single control IC or two or more control ICs. For the case including a single control IC, the singe control IC controls a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. For the case including two control ICs, a low voltage IC controls a first transistor, a second transistor, and a third transistor and the high voltage IC controls a fourth transistor, a fifth transistor, and a sixth transistor.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A semiconductor device comprises a semiconductor substrate, a plurality of metal layers, an adhesive layer, a compound layer, and a plurality of contact pads. A thickness of the semiconductor substrate is in a range from 15 μm to 35 μm. A thickness of the compound layer is larger than the thickness of the semiconductor substrate. A coefficient of thermal expansion of the compound layer is less than or equal to 9 ppm/° C. A glass transition temperature of the compound layer is larger than 150° C. The plurality of metal layers comprises a first titanium layer, a first nickel layer, a silver layer, a second nickel layer, and a metallic layer. In a first example, the metallic layer is a second titanium layer. In a second example, the metallic layer is a Titanium Nitride (TiN) layer.

IPC Classes  ?

• H01L 23/482 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body
• H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Abstract

A control circuit for controlling a switching regulator includes a timer, a comparator, a driver circuit and a controller. The timer generates an input signal indicative of whether a predetermined amount of time has elapsed since an activation of a drive signal. The comparator is configured to compare a feedback voltage with a reference voltage to generate a comparison signal. The driver circuit is controlled by a control signal to generate the drive signal according to one of the input signal and the comparison signal. The control signal indicates whether a mode is enabled. When the mode is enabled, the driver circuit is configured to generate the drive signal according to the input signal. The controller is configured to, in response to an activation of the input signal, generate the control signal according to a result of a comparison of the feedback voltage with another reference voltage higher than the reference voltage.

IPC Classes  ?

• H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
• H02M 1/00 - Details of apparatus for conversion

Abstract

An intelligent power module (IPM) comprises a first transistor die supporting element, a second transistor die supporting element, a third transistor die supporting element, and a fourth transistor die supporting element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a tie bar, a low voltage IC, a high voltage IC, a plurality of leads, a first slanted section, a second slanted section, a third slanted section, a fourth slanted section, a fifth slanted section, and a molding encapsulation. A respective bottom surface of each of the first, second, third, and fourth transistor die supporting elements are exposed from the molding encapsulation.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H02P 29/00 - Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors

Abstract

A multi-phase current mode hysteretic modulator implements phase current balancing among the multiple power stages using slope-compensated emulated phase current signals and individual phase control signal for each phase. In some embodiments, the slope-compensated emulated phase current signals of all the phases are averaged and compared to the slope-compensated emulated phase current signal of each phase to generate a phase current balance control signal for each phase. The phase current balance control signal is combined with the voltage control loop error signal to generate a phase control signal for each phase where the phase control signals are generated for the multiple phases to control the phase current delivered by each power stage.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/00 - Details of apparatus for conversion

Abstract

out may, for example, correspond to a pulse-width modulated output delivered to a load through an inductor. Various embodiments may advantageously increase the effective bandwidth of the modulation circuit while maintaining desired frequency response characteristics.

IPC Classes  ?

• H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
• H02M 1/00 - Details of apparatus for conversion
• H02M 3/156 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

Abstract

A device and a method of making the device comprising, a semiconductor substrate layer and an epitaxial layer formed on the semiconductor substrate. One or more trenches are formed in the epitaxial layer, each trench having a pair of opposing sidewalls, wherein a distance between the opposing sidewalls is greater near a bottom of the trench than near a top of the trench, wherein the bottom of the trench is closer to the semiconductor substrate layer than the top.

IPC Classes  ?

• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H10D 62/17 - Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
• H10D 64/27 - Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
• H10D 84/01 - Manufacture or treatment
• H10D 84/03 - Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology

Abstract

A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles comprising a first die paddle. The first die paddle comprises one or more through holes, one or more protrusions with grooves on top surfaces of the one or more protrusions, or one or more squeezed extensions. Each of the one or more through holes is filled with a respective portion of the molding encapsulation. Each of the one or more through holes may be of a rectangular shape, a rectangular shape with four filleted corners, a circular shape, or an oval shape. Each of the grooves is filled with a respective portion of the molding encapsulation. A respective side wall of each of the one or more squeezed extensions is of a swallowtail shape. The swallowtail shape directly contacts the molding encapsulation.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A controller for a switching regulator receiving an input voltage and generating a regulated output voltage includes a buck control circuit and a boost control circuit. The controller activates the buck control circuit to generate the regulated output voltage having a first voltage value less than the input voltage. The controller activates the boost control circuit to return charges stored on the output capacitor at the output node to the input node, thereby driving the regulated output voltage to a second voltage value lower than the first voltage value. In some embodiments, in response to a command instructing the controller to allow the output voltage to decay, the controller operates in the boost mode using the boost control circuit to recycle the stored charge at the output node while ramping down the output voltage.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/00 - Details of apparatus for conversion
• H02M 1/36 - Means for starting or stopping converters

Abstract

A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.

IPC Classes  ?

• G01K 7/01 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using semiconducting elements having PN junctions
• H02H 5/04 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
• G01K 7/22 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a non-linear resistance, e.g. thermistor
• G01K 7/28 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being an electrolyte in a specially-adapted circuit, e.g. bridge circuit
• H02H 9/00 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
• H02H 9/02 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
• H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage

Abstract

A power semiconductor package comprises a lead frame, a semiconductor chip, and a molding encapsulation. The lead frame comprises an elevated section comprising a source section; a drain section; and a plurality of leads. The semiconductor chip includes a metal-oxide-semiconductor field-effect transistor (MOSFET) disposed over the lead frame. The semiconductor chip comprises a source electrode, a drain electrode, and a gate electrode. The source electrode of the semiconductor chip is electrically and mechanically connected to the source section of the elevated section of the lead frame. The semiconductor chip is served as a low side field-effect transistor as a flipped-chip connected to a heat sink by a first thermal interface material. A high side field-effect transistor is connected to the heat sink by a second thermal interface material. The low side field-effect transistor and the high side field-effect transistor are mounted on a printed circuit board.

IPC Classes  ?

• H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
• H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
• H05K 1/18 - Printed circuits structurally associated with non-printed electric components
• H05K 1/11 - Printed elements for providing electric connections to or between printed circuits

Abstract

A multi-phase current mode hysteretic modulator implements phase current balancing among the multiple power stages using slope-compensated emulated phase current signals and individual phase control signal for each phase. In some embodiments, the slope-compensated emulated phase current signals of all the phases are averaged and compared to the slope-compensated emulated phase current signal of each phase to generate a phase current balance control signal for each phase. The phase current balance control signal is combined with the voltage control loop error signal to generate a phase control signal for each phase where the phase control signals are generated for the multiple phases to control the phase current delivered by each power stage.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/00 - Details of apparatus for conversion

Abstract

An improved inverted field-effect-transistor semiconductor device and method of making thereof may comprise a source layer on a bottom and a drain disposed on a top of a semiconductor substrate and a vertical current conducting channel between the source layer and the drain controlled by a trench gate electrode disposed in a gate trench lined with an insulating material. A heavily doped drain region is disposed near the top of the substrate surrounding an upper portion of a shield trench and the gate trench. A doped body contact region is disposed in the substrate and surrounding a lower portion of the shield trench. A shield electrode extends upward from the source layer in the shield trench for electrically shorting the source layer and the body region wherein the shield structure extends upward to a heavily doped drain region and is insulated from the heavily doped drain region to act as a shield electrode.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/66 - Types of semiconductor device
• H01L 29/40 - Electrodes

Abstract

A semiconductor package comprises a semiconductor substrate, a first metal layer, an adhesive layer, a second metal layer, a rigid supporting layer, and a plurality of contact pads. A thickness of the semiconductor substrate is equal to or less than 50 microns. A thickness of the rigid supporting layer is larger than the thickness of the semiconductor substrate. A thickness of the second metal layer is larger than a thickness of the first metal layer. A method comprises the steps of providing a device wafer; providing a supporting wafer; attaching the supporting wafer to the device wafer via an adhesive layer; and applying a singulaton process so as to form a plurality of semiconductor packages.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 23/15 - Ceramic or glass substrates

Abstract

A flyback converter to control conduction time in AC/DC conversion technology. The flyback converter includes a primary side and a secondary side. The primary side includes a main switch connecting a primary coil to the input of the flyback converter in series. The secondary side includes a secondary coil coupling with the output terminal of the flyback converter. When a switching frequency of the main switch is at a preset first on time in the range between the off frequency and the second switching frequency, the on-time of the main switch continuously changes corresponding to output load changes. When the switching frequency of the main switch is higher than the first switching frequency, the on time of the main switch is constant. The on time is controlled to change linearly, so as to avoid excessive changes in the output voltage ripples, thereby improving circuit efficiency.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only

Abstract

Apparatus and associated methods relate to a power supply noise disturbance rejection circuit (NDRC) having a first circuit reference potential (CRP1), a second circuit reference potential (CRP2), and a galvanic link conductively connecting CRP1 and CRP2 and providing a non-zero resistance return path for at least one current mode signal (CMS). In an illustrative example, a power supply monitor circuit (PSMC) may be referenced to CRP1 and a control circuit to CRP2. The PMSC may, for example, generate a voltage mode signal (VMS) relative to CRP1 and representing an output parameter of a power supply circuit (PSC), and convert the VMS into a first CMS (CMS1). The control circuit may, for example, generate a control signal for the PSC from CMS1. Various embodiments may advantageously attenuate a noise margin of a CMS presented at the control circuit by a factor of at least 10 relative to an equivalent VMS.

IPC Classes  ?

• H03K 5/125 - Discriminating pulses
• H03K 5/1252 - Suppression or limitation of noise or interference
• H04B 15/00 - Suppression or limitation of noise or interference

Abstract

An electronic device includes a communication circuit, a sensor, a display, a memory, and a processor. The memory stores one or more instructions that, when executed, may cause the processor to obtain data associated with a health information service by using the sensor, to extract at least one feature from the data based on information stored in the memory and associated with the at least one feature to be used to train a model for determining whether to synchronize the data, to determine whether to synchronize the data based on the model stored in the memory by using the at least one feature, and to send the data to a first external electronic device providing the health information service through the communication circuit, in response to a determination to synchronize the data. Moreover, other embodiments found throughout the present disclosure are also disclosed.

IPC Classes  ?

• G16H 10/60 - ICT specially adapted for the handling or processing of patient-related medical or healthcare data for patient-specific data, e.g. for electronic patient records
• G06N 20/00 - Machine learning

Abstract

Transistor device and method of making thereof comprising a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type on top of the substrate. A body region doped with a second conductivity type is formed in the epitaxial layer wherein the second conductivity type is opposite the first conductivity type and a source region doped with the first conductivity type is formed in the body region of the epitaxial layer. An integrated planar-trench gate having a planar gate portion is formed on the surface of the epitaxial layer that is contiguous with a gate trench portion formed in the epitaxial layer.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• H01L 29/66 - Types of semiconductor device
• H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
• H01L 21/761 - PN junctions
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation

Abstract

A wafer level chip scale semiconductor package comprises a device semiconductor layer, a backside metallization layer, a film laminate layer, and a metal layer. The device semiconductor layer comprises a plurality of metal electrodes disposed on a front surface of the device semiconductor. Each side surface of the backside metallization layer is coplanar with a corresponding side surface of the device semiconductor layer. Each side surface of the metal layer is coplanar with a corresponding side surface of the film laminate layer. A surface area of a back surface of the backside metallization layer is smaller than a surface area of a front surface of the metal layer.

IPC Classes  ?

• H01L 21/32 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers using masks
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

A method comprises the steps of providing a wafer; applying a redistribution layer, grinding a back side of the wafer; depositing a metal layer; and applying a singulation process. A semiconductor package comprises a metal-oxide-semiconductor field-effect transistor (MOSFET), a redistribution layer, and a metal layer. The MOSFET comprises a source electrode, a gate electrode, a drain electrode and a plurality of partial drain plugs. The source electrode, the gate electrode, and the drain electrode are positioned at a front side of the MOSFET.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings

Abstract

A power stage in a multi-phase switching power supply incorporates a current sense circuit coupled to the output voltage disconnect transistor to conduct a portion of an inductor current flowing in the output inductor of the power stage. The current sense circuit is controlled by the same control signal controlling the output voltage disconnect transistor. The portion of the inductor current being conducted by the current sense circuit includes an upslope current and a downslope current of the inductor current. A phase redundant controller generates a sense current signal indicative of the portion of the inductor current conducted by the current sense circuit. Accurate current sensing is implemented for the power stage where the current sense value dose not require temperature compensation.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/00 - Details of apparatus for conversion

Abstract

A semiconductor device and a method of making thereof are disclosed. The device includes a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type formed on the substrate. A buffer layer between the substrate and the epitaxial layer is doped with the first conductivity type at a doping level between that of the substrate and that of the epitaxial layer. A cell includes a body region doped with the second conductivity formed in the epitaxial layer. The second conductivity type is opposite the first conductivity type. The cell includes a source region doped with the first conductivity type and formed in at least the body region. The device further includes a short region doped with the second conductivity type formed in the epitaxial layer separated from source region of the cell by the body region of the cell wherein the short region is conductively coupled with the source region.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/66 - Types of semiconductor device
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

A silicon carbide MOSFET device and method for making thereof are disclosed. The silicon carbide MOSFET device comprises a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type. A body region of a second conductivity type opposite the first is formed in epitaxial layer and an accumulation mode region of the first conductivity type is formed in the body region and an inversion mode region of the second conductivity type formed in the body region. The accumulation mode region is located between the inversion mode region and a junction field effect transistor (JFET) region of the epitaxial layer.

IPC Classes  ?

• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/66 - Types of semiconductor device
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/10 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

Abstract

out may, for example, correspond to a pulse-width modulated output delivered to a load through an inductor. Various embodiments may advantageously increase the effective bandwidth of the modulation circuit while maintaining desired frequency response characteristics.

IPC Classes  ?

• H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
• H02M 1/00 - Details of apparatus for conversion
• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

Abstract

A semiconductor package comprises a lead frame, a low side metal-oxide-semiconductor field-effect transistor (MOSFET), an E-fuse MOSFET, a high side MOSFET, a metal connection, a gate driver, an E-fuse IC, and a molding encapsulation. A buck converter comprises a smart power stage (SPS) network and an E-fuse solution network. The SPS network comprises a high side switch, a low side switch, and a gate driver. A drain of the low side switch is coupled to a source of the high side switch via a switch node. The gate driver is coupled to a gate of the high side switch and a gate of the low side switch. The E-fuse solution network comprises a sense resistor, an E-fuse switch, an E-fuse integrated circuit (IC), and an SD circuit.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/495 - Lead-frames
• H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
• H01L 23/525 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H01L 23/62 - Protection against overcurrent or overload, e.g. fuses, shunts

Abstract

A transient voltage suppressor (TVS) device includes a silicon controlled rectifier (SCR) as the clamp device between a high-side steering diode and a low-side steering diode. The SCR includes alternating emitter and base regions arranged interleaving in a direction along a major surface of a semiconductor layer and orthogonal to a current path of the SCR. The TVS device realizes low capacitance and high holding voltage at the protected node.

IPC Classes  ?

• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage

Abstract

A semi-wafer level packaging method comprises the steps of providing a wafer; grinding a back side of the wafer; forming a metallization layer; removing a peripheral ring; bonding a first tape; applying a dicing process; bonding a second tape; removing the first tape; bonding a supporting structure; bonding a third tape; removing the second tape; and applying a singulation process. A semi-wafer level packaging method comprises the steps of providing a wafer; attaching a carrier wafer to the wafer; grinding a back side of the wafer; forming a metallization layer; applying a dicing process; bonding a supporting structure; removing the carrier wafer; bonding a tape; and applying a singulation process.

IPC Classes  ?

• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

A semiconductor package comprises a lead frame, a chip, and a molding encapsulation. The lead frame comprises one or more die paddles, a first plurality of leads, and a second plurality of leads. A respective end surface of each lead of the first plurality of leads and the second plurality of leads is plated with a metal. A first respective window on a first side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A second respective window on a second side of each lead of the first plurality of leads and the second plurality of leads is not plated with the metal. A method for fabricating a semiconductor package comprises the steps of providing a lead frame array, mounting a chip, forming a molding encapsulation, and applying a cutting process or a punching process.

IPC Classes  ?

• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/495 - Lead-frames

Abstract

Apparatus and associated methods relate to a power supply noise disturbance rejection circuit (NDRC) having a first circuit reference potential (CRP1), a second circuit reference potential (CRP2), and a galvanic link conductively connecting CRP1 and CRP2 and providing a non-zero resistance return path for at least one current mode signal (CMS). In an illustrative example, a power supply monitor circuit (PSMC) may be referenced to CRP1 and a control circuit to CRP2. The PMSC may, for example, generate a voltage mode signal (VMS) relative to CRP1 and representing an output parameter of a power supply circuit (PSC), and convert the VMS into a first CMS (CMS1). The control circuit may, for example, generate a control signal for the PSC from CMS1. Various embodiments may advantageously attenuate a noise margin of a CMS presented at the control circuit by a factor of at least 10 relative to an equivalent VMS.

IPC Classes  ?

• H03K 5/125 - Discriminating pulses
• H03K 5/1252 - Suppression or limitation of noise or interference
• H04B 15/00 - Suppression or limitation of noise or interference

Abstract

A port controller circuit is configured to control power transfer on a power path between a first terminal and a second terminal. The controller circuit includes first and second transistors connected in series between the first terminal and the second terminal, a control terminal of the first transistor receiving a first gate voltage and a control terminal of the second transistor receiving a second gate voltage. A first gate voltage control circuit generates the first gate voltage driving the control terminal of the first transistor and regulates the first gate voltage to keep the first transistor turned on. In response to the first gate voltage control circuit regulating the first gate voltage to a voltage value less than a first voltage level, the first gate voltage control circuit asserts a first signal to indicate a fault condition at the first transistor.

IPC Classes  ?

• G06F 1/26 - Power supply means, e.g. regulation thereof
• G06F 13/38 - Information transfer, e.g. on bus

Abstract

A system and method in an electronic system including multiple serial ports, each coupled to a port controller circuit. In one embodiment, the method includes providing a monitor terminal at each port controller circuit, each monitor terminal having a first resistance value; connecting together electrically at least two of the monitor terminals of the port controller circuits of the multiple serial ports; and sensing, at each port controller circuit, a first voltage at the monitor terminal. In operation, when the first voltage is outside a predetermined voltage window, a first signal is generated at a first port controller circuit where the first signal has a state indicating a failure detected in at least one of the port controller circuits with connected monitor terminals.

IPC Classes  ?

• H02H 3/00 - Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition, with or without subsequent reconnection
• H02H 7/20 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
• G01R 31/52 - Testing for short-circuits, leakage current or ground faults
• H02H 1/00 - Details of emergency protective circuit arrangements

Abstract

An isolated converter has a constant voltage mode and a constant current mode. The isolated converter includes a transformer, a main switch, a driver, a controller, and an isolator. The controller includes a constant current control unit, a voltage comparator, and a control logic unit. The constant current control unit generates a voltage adjustment signal to adjust the reference voltage or voltage feedback signal according to a current feedback signal for sensing the output current. The control logic unit generates a trigger signal according to the comparison signal of the voltage comparator. The isolator connects the output terminal of the controller and the driver. The input terminal is used to transmit the trigger signal to the input terminal of the driver. The isolated converter can provide excellent constant voltage transient response and stable constant current regulation according to load conditions by improving the controller.

IPC Classes  ?

• H02M 1/00 - Details of apparatus for conversion

Abstract

A port controller circuit implements monitoring and detection of power path short failures by regulating the control voltage to the power switches during the on-state of the power switches. A failure condition is indicated when the control voltage to a power switch is regulated to a voltage level outside of a permissible range. The port controller circuit implements real-time monitoring where a short within the power path can be detected while the power path is enabled and the fault condition can be used to disable other port controller circuits in a multi-port system. In one embodiment, a port controller circuit includes a pair of back-to-back transistors forming the power path and the real-time fault detection scheme is applied to control each transistor independently to determine if either transistor has a fault condition.

IPC Classes  ?

• G06F 1/26 - Power supply means, e.g. regulation thereof
• G06F 13/38 - Information transfer, e.g. on bus

Abstract

A power stage in a multi-phase switching power supply incorporates a current sense transistor coupled in series with the output inductor to sense the phase current for the power stage. In some embodiments, the current sense transistor mirrors the output voltage disconnect transistor (the ORing FET) used to switchably connect a power stage to the output voltage node. The current sense transistor measures a portion of the inductor current flowing through the output inductor where the inductor current is indicative of the phase current of the power stage. Accurate current sensing is implemented for the power stage where the current sense value dose not require temperature compensation.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/00 - Details of apparatus for conversion

Abstract

A semiconductor package fabrication method comprises the steps of providing a wafer, applying a seed layer, forming a photo resist layer, plating a copper layer, removing the photo resist layer, removing the seed layer, applying a grinding process, forming metallization, and applying a singulation process. A semiconductor package comprises a silicon layer, an aluminum layer, a passivation layer, a polyimide layer, a copper layer, and metallization. In one example, an area of a contact area of a gate clip is smaller than an area of a gate copper surface. The area of the contact area of the gate clip is larger than a gate aluminum surface. In another example, an area of a contact area of a gate pin is larger than an area of a gate copper surface. The area of the contact area of the gate pin is larger than a gate aluminum surface.

IPC Classes  ?

• H01L 29/66 - Types of semiconductor device
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/495 - Lead-frames

Abstract

A multi-port system and method implements fault detection using a resistor connected to each port controller where the resistors of at least two port controllers are connected together in parallel. Each port controller supplies a predetermined current to the associated resistor and senses the resistor voltage of the parallelly connected resistors to detect for a fault condition. A failure condition is indicated when the resistor voltage is outside of a given threshold window. In this manner, for a single point failure, such as a short along the power path of a port controller, the other port controller senses a change in the resistor voltage and can assert a fault signal. In one embodiment, the fault signal is an open drain output and operates to pull down on a fault bus, which disables all the port controllers in the system through a disable input.

IPC Classes  ?

• H02H 7/00 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
• H02H 7/20 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
• G01R 31/52 - Testing for short-circuits, leakage current or ground faults
• H02H 1/00 - Details of emergency protective circuit arrangements

Abstract

A flyback converter, including: a transformer, a first switch, a second switch, and a control circuit. The transformer includes a first side and a second side. The first switch is coupled to the first side at an input terminal. The second switch is coupled to the second side and an output terminal. The control circuit is coupled between the output terminal and the second switch, wherein the control circuit is arranged to adjust a voltage on the input terminal by changing a flow of a current between the second switch and the second side.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• H02M 1/00 - Details of apparatus for conversion

Abstract

A flyback converter includes a transformer, a sensing impedance, a switch and a control circuit. The sensing impedance is coupled between the transformer and an output terminal of the flyback converter. The switch is coupled to the transformer. The transformer is charged when the switch activates. The transformer is discharged when the switch deactivates. The control circuit is arranged to detect if the sensing impedance is bypassed, and further arranged to adjust an operating frequency of the switch when the sensing impedance is bypassed.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only

Abstract

A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second low side FET, a first high side FET, a second high side FET, a first metal clip, a second metal clip, and a molding encapsulation. The semiconductor package further comprises an optional integrated circuit (IC) controller or an optional inductor. A method for fabricating a semiconductor package. The method comprises the steps of providing a lead frame; attaching a first low side FET, a second low side FET, a first high side FET, and a second high side FET to the lead frame; mounting a first metal clip and a second metal clip; forming a molding encapsulation; and applying a singulation process.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 49/02 - Thin-film or thick-film devices
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A signal transmission circuit is configured for transmitting control information from a secondary side of a power converter to a primary side of the power converter. The signal transmission circuit includes a transmitter circuit, a signal transformer and a detection circuit. The transmitter circuit is configured to generate a ramp signal at least according to a first control signal outputted from the secondary side. The first control signal indicates the control information provided for a switch in the primary side. The signal transformer, coupled to the transmitter circuit, is configured to convert the ramp signal to generate an output signal. The output signal includes a positive-going component and a negative-going component to indicate the control information. The detection circuit, coupled to the signal transformer, is configured to detect the positive-going component and the negative-going component to provide the control information for the switch.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/00 - Details of apparatus for conversion

Abstract

Apparatus and associated methods relate to implementing an auto-inductance-detection architecture to reconstruct current monitor output (IMON) when a low-side switch in a power stage is on. In an illustrative example, an IMON generation circuit may include a variable resistor. A close loop control (e.g., OTA, switches, and variable resistor) may be configured to adjust a resistance value of the variable resistor automatically. The IMON generation circuit may also include a low pass filter coupled to a switching node of the power stage to receive a corresponding signal and provide a DC value. The difference between the corresponding signal and the DC value may be configured to enable or disable the close loop control. By providing the close loop control, the IMON generation circuit may advantageously perform auto-inductance detection (AID) and provide a more accurate IMON reconstruction method.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• H02M 1/00 - Details of apparatus for conversion

Abstract

A process is applied to develop a plurality of reverse conducting insulated gate bipolar transistors (RCIGBTs). The process comprises the steps of providing a wafer, applying a first grinding process, patterning a mask, applying an etching process, removing the mask, implanting N++ type dopant, applying a second grinding process forming a TAIKO ring, implanting P+ type dopant, annealing and depositing TiNiAg or TiNiVAg, removing the TAIKO ring, attaching a tape, and applying a singulation process. The mask can be a soft mask or a hard mask. The etching process can be a wet etching only; a wet etching followed by a dry etching; or a dry etching only.

IPC Classes  ?

• H01L 21/425 - Bombardment with radiation with high-energy radiation producing ion implantation
• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
• H01L 29/66 - Types of semiconductor device
• H01L 21/8222 - Bipolar technology
• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/82 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
• H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer

Abstract

When a constant on-time flyback converter is in the switch-on stage, the gate voltage of the switch and the input voltage of the flyback converter adopt the primary side of the transformer to control. The gate voltage is controlled by the second control signal generated by the controller. The flyback converter is then turn off to enter the switch off stage. When the flyback converter is in the switch off stage, the secondary side controller on the secondary side of the transformer, based on the output voltage and output current of the secondary side, sends a first control signal to the primary side controller to control the main switch to turn on. Thus, the flyback converter enters the switch-on stage. Therefore, the calculation complexity is reduced, and there is no need to set a blanking time, such that the flyback converter can be used in high switching frequency applications.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• H02M 1/00 - Details of apparatus for conversion

Abstract

A flyback converter to control conduction time in AC/DC conversion technology. The flyback converter includes a primary side and a secondary side. The primary side includes a main switch connecting a primary coil to the input of the flyback converter in series. The secondary side includes a secondary coil coupling with the output terminal of the flyback converter. When a switching frequency of the main switch is at a preset first on time in the range between the off frequency and the second switching frequency, the on-time of the main switch continuously changes corresponding to output load changes. When the switching frequency of the main switch is higher than the first switching frequency, the on time of the main switch is constant. The on time is controlled to change linearly, so as to avoid excessive changes in the output voltage ripples, thereby improving circuit efficiency.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only

Abstract

A semiconductor package comprises a semiconductor substrate, a first metal layer, an adhesive layer, a second metal layer, a rigid supporting layer, and a plurality of contact pads. A thickness of the semiconductor substrate is equal to or less than 50 microns. A thickness of the rigid supporting layer is larger than the thickness of the semiconductor substrate. A thickness of the second metal layer is larger than a thickness of the first metal layer. A method comprises the steps of providing a device wafer; providing a supporting wafer; attaching the supporting wafer to the device wafer via an adhesive layer; and applying a singulation process so as to form a plurality of semiconductor packages.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 23/15 - Ceramic or glass substrates

Abstract

An intelligent power module (IPM) comprises a first, second, third and fourth die supporting elements, a first group of insulated gate bipolar transistors (IGBTs), a second group of IGBTs, a first group of super-junction metal-oxide-semiconductor field-effect transistors (MOSFETs), a second group of super-junction MOSFETs, a fifth die supporting element, a low voltage IC, a high voltage IC, and a molding encapsulation. The low and high voltage ICs are attached to the fifth die supporting element. The molding encapsulation encloses the first, second, third and fourth die supporting elements, the first group of IGBTs, the second group of IGBTs, the first group of super-junction MOSFETs, the second group of super-junction MOSFETs, the fifth die supporting element, the low voltage IC, the high voltage IC.

IPC Classes  ?

• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H02K 11/33 - Drive circuits, e.g. power electronics
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement