Presented is a method for forming a silicon insulating layer, and more particularly, to a method for forming a silicon insulating layer that is doped with oxygen on a substrate. A method for forming a silicon insulating layer according to an exemplary embodiment may be a method for forming a silicon insulating layer that is doped with oxygen and include preparing a substrate in a reaction space, forming a silicon insulating layer on the substrate through an atomic layer deposition process, and generating plasma in the reaction space by using a gas containing oxygen to dope oxygen into the silicon insulating layer.
322 compound by supplying a B precursor and an X precursor onto a substrate in a chamber; and (b) supplying an A precursor onto the substrate in the chamber, wherein steps (a) and (b) are repeatedly carried out, the A precursor is composed of at least one compound selected from an amine-based compound and an amidine-based compound, the B precursor is composed of an organometallic compound comprising a divalent cation, and the X precursor is composed of hydrogen halide.
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
3.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING
The present inventive concept relates to a substrate processing apparatus, including: a chamber; a susceptor supporting a substrate having a tetragonal shape where a length of a side is 730 mm or more; a gas supply unit supplying a gas toward the susceptor; a lift pin inserted into the susceptor to be raised or lowered, the lift pin raising or lowering the substrate; and a lamp heater disposed under the susceptor, and a substrate processing method.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present inventive concept relates to a substrate processing apparatus comprising: a chamber providing a processing space; a lid for covering the top of the chamber; a substrate support part supporting at least one substrate and rotating about a rotation axis such that the substrate passes through an imaging area; a gas injection part for injecting a process gas toward the substrate support part; an area image capturing part for capturing an image of the imaging area to obtain a thermal image of the imaging area; and a calculation part for calculating the temperature data of the substrate from the thermal image.
According to one embodiment of the present invention, a method for forming a metal-containing thin film on a substrate comprises the steps of: preparing a substrate in a deposition chamber; depositing a metal atomic layer on the substrate by supplying, to the substrate, a carrier gas including sputtered metal atoms formed from a sputtering target located in a sputtering chamber separate from the deposition chamber; and chemically reacting the metal atomic layer with a reaction gas to form a metal-containing thin film containing the metal atoms.
Disclosed is A method of forming gallium oxide layer on a substrate comprising: a process of forming a first gallium oxide layer; and a process of forming a second gallium oxide layer on the first gallium oxide layer, wherein any one of the process of forming the first gallium oxide layer and the process of forming the second gallium oxide layer uses atomic layer deposition(ALD), and another one of the process of forming the first gallium oxide layer and the process of forming the second gallium oxide layer uses chemical vaporization deposition (CVD).
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
7.
ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR
The present invention provides an electronic device and a manufacturing method therefor, the electronic device comprising: a first electrode; and a dielectric layer provided on the first electrode, wherein the dielectric layer comprises: a first dielectric layer provided on the first electrode and including titanium oxide; and a second dielectric layer provided on the first dielectric layer and including yttrium oxide.
The present invention relates to: a method for forming an electronic circuit element in which a substrate having at least one through-hole, in which metal wiring, a logic element, and a memory element are formed, is sequentially stacked on and electrically connected to the upper part of a substrate including metal wiring, a logic element, and a memory element; and the electronic circuit element. According to the method for forming an electronic circuit element and the electronic circuit element of the present invention, a substrate having at least one through-hole, in which metal wiring, a logic element, and a memory element are formed, is sequentially stacked on and electrically connected to the upper part of a substrate including metal wiring, a logic element, and a memory element, and thus an electronic circuit element having a stacked structure can be manufactured using a small number of substrates without an etching process or a polishing process.
H10D 84/80 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs
9.
PEROVSKITE SOLAR CELL AND METHOD FOR MANUFACTURING SAME
The present inventive concept provides a solar cell and a method for manufacturing same, the solar cell comprising: a light absorbing layer comprising a perovskite compound; and an electron transporting layer on one surface of the light absorbing layer, wherein the electron transporting layer consists of a first electron transporting layer on the one surface of the light absorbing layer, and a second electron transporting layer on the first electron transporting layer, the first electron transporting layer consists of an inorganic metal nitride, and the second electron transporting layer consists of an inorganic metal nitride oxide.
The present invention relates to a silicon oxide film formation method and, more specifically, to a silicon oxide film formation method for forming a silicon oxide film on a substrate. The silicon oxide film formation method according to an embodiment of the present invention comprises the steps of: (a) spraying a silicon-containing gas onto a substrate; (b) forming first plasma on the substrate by using a first gas; and (c) spraying an oxygen-containing gas onto the substrate, wherein a process cycle including steps (a) to (c) is repeatedly performed.
Provided are a transistor and a method for manufacturing the same, and more particularly, to a transistor having improved characteristics and a method for manufacturing the same. A transistor includes a channel layer including at least one of metal oxide, metal nitride, or metal oxynitride, source and drain electrodes disposed on the channel layer, and a first treatment layer disposed between the channel layer and the source and drain electrodes.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided are a semiconductor device and a method for manufacturing the same, and more specifically, to a method for manufacturing a semiconductor device including a semiconductor layer containing gallium nitride. A semiconductor device includes a glass substrate, a seed layer disposed on the glass substrate, and a semiconductor layer containing gallium nitride and disposed on the seed layer.
C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present inventive concept provides a method of cleaning a chamber forming a perovskite compound, the method including a step of exposing an inner portion of the chamber to hydrogen (H)-containing gas plasma and a step of exposing the inner portion of the chamber to oxygen (O)-containing gas plasma, wherein the step of exposing the inner portion of the chamber to the oxygen (O)-containing gas plasma is performed after the step of exposing the inner portion of the chamber to the hydrogen (H)-containing gas plasma.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The present invention provides a method for forming a Group III-V layer on a substrate in a chamber, the method comprising the steps of: forming a first layer on a substrate by atomic layer deposition (ALD); and forming a second layer of Group III-V on the first layer.
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
15.
METHOD FOR FORMING ELECTRODE AND METHOD FOR FORMING CAPACITOR BY USING SAME
The present invention provides a method for forming an electrode including a first layer and a second layer on a substrate, the method comprising the steps of: forming the first layer on the substrate; and forming the second layer on the first layer, wherein the first layer contains Ru, and the second layer contains an oxide of Ru (RuO).
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present inventive concept provides a method for forming a thin film of a perovskite compound, the method comprising: a step for depositing a perovskite compound by reacting at least one compound selected from amine-based compounds and amidine-based compounds, an organometallic compound including a divalent cation, and at least one halogenated hydrogen; and a step for removing impurities present in the perovskite compound.
H10K 71/00 - Manufacture or treatment specially adapted for the organic devices covered by this subclass
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H10K 30/10 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
A method for cleaning a chamber in which a film containing ruthenium has been deposited, according to one embodiment of the present invention, comprises the steps of: a) injecting an oxygen-containing gas into the chamber; and b) injecting a hydrogen-containing gas into the chamber.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
C23C 16/52 - Controlling or regulating the coating process
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided are a method for manufacturing a solar cell and a solar cell manufactured thereby, the method comprising the steps of: forming, on a substrate having a plurality of through holes, a buffer layer having first openings in regions corresponding to the plurality of through holes; forming, on the buffer layer, an undoped group III-V compound layer having second openings in regions corresponding to the plurality of through holes; filling the insides of the plurality of through holes, the first openings, and the second openings with a first electrode; and forming a first doped group III-V compound layer on the first electrode and the undoped group III-V compound layer.
The present invention provides a method for manufacturing a solar cell, comprising: a step of first patterning the periphery of one surface of a substrate so as to form a groove; a step of forming a thin film layer on one surface or the other surface of the substrate; and a step of cutting the periphery of the substrate along the groove.
The present invention relates to a substrate processing device comprising: a chamber comprising a process space; a lid positioned on the upper part of the process space; a substrate support part facing the lid and supporting a substrate; a first gas spray part disposed at a first region side of the process space; and a second gas spray part which is disposed at a second region side of the process space and comprises an electrode for forming plasma, wherein the height of the lower surface of the second gas spray part is higher than the height of the lower surface of the lid, and the height of the lower surface of the first gas spray part is equal to or lower than the height of the lower surface of the lid.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/52 - Controlling or regulating the coating process
The present invention relates to a method for forming a thin film using a substrate processing apparatus comprising: a chamber comprising a first space into which a source gas is injected and a second space into which a reactant gas is injected; and a susceptor positioned inside the chamber and supporting a first substrate and a second substrate. The method comprises the steps of: a) injecting, a plurality of times, a source gas onto the first substrate positioned in the first space; b) continuously injecting the reactant gas onto the second substrate positioned in the second space; c) positioning the first substrate in the second space and positioning the second substrate in the first space; d) injecting, a plurality of times, the source gas onto the second substrate positioned in the first space; and e) continuously injecting the reactant gas onto the first substrate positioned in the second space.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
A substrate processing apparatus according to an example embodiment includes: a chamber having a sidewall; a susceptor mounting a substrate inside the chamber; an upper dome covering an upper surface of the chamber and formed of a dielectric material; a lower dome covering a lower surface of the chamber and formed of a dielectric material; a liner disposed on internal side of the chamber and disposed between the upper dome and the lower dome; and an antenna disposed on the upper dome and generating inductively-coupled plasma. A ratio of a diameter of the antenna to a diameter of the substrate may be 80 percent to 120 percent.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
The present invention provides a solar cell comprising: a substrate; a first passivation layer provided on one surface of the substrate; a first conductive semiconductor layer provided on one surface of the first passivation layer; a first transparent conductive layer provided on one surface of the first conductive semiconductor layer; and a first electrode provided on one surface of the first transparent conductive layer, wherein the first conductive semiconductor layer comprises: a first semiconductor layer including a nanocrystalline or microcrystalline semiconductor layer; a second semiconductor layer provided on the first semiconductor layer and including a nanocrystalline or microcrystalline oxide semiconductor layer; and a third semiconductor layer provided on the second semiconductor layer and including a nanocrystalline or microcrystalline semiconductor layer.
A method for forming a carbon-containing film, according to an embodiment of the present invention, may comprise the steps of: spraying, into a chamber in which a substrate is accommodated, a carbon-containing gas so as to form an amorphous film on the substrate; and forming plasma while spraying a nitrogen-containing gas into the chamber, so as to crystallize the amorphous film while doping the amorphous film with nitrogen. Therefore, according to embodiments of the present invention, a crystalline carbon-containing film can be easily formed at a low temperature. Thus, when the crystalline carbon-containing film is formed, damage, caused by high-temperature heat, to a substrate and/or a lower film can be suppressed or prevented.
The present invention provides a method for forming a metal film on a substrate, the thin film forming method comprising the steps of: supplying a source gas including a metal precursor gas onto the substrate; and supplying a first plasma gas onto the substrate and forming a first plasma, wherein the first plasma gas includes at least one gas selected from the group consisting of chlorine (Cl) gas and fluorine (F) gas.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A method for forming a capacitor electrode in accordance with the exemplary embodiment of the present disclosure includes preparing a substrate, forming a first thin film containing titanium (Ti) by injecting a source containing titanium on the substrate, and forming a second thin film by injecting a source containing a noble metal element or copper (Cu) on the substrate. Accordingly, in accordance with exemplary embodiments of the present disclosure, it is possible to suppress or prevent damage to an underlayer during electrode formation. In addition, it is possible to lower the resistivity of the electrode, and there is an effect of improving electrical characteristics of the electrode. In addition, there is an effect of improving quality characteristics of a capacitor as damage to the underlayer is suppressed or prevented and the electrical characteristics of the electrode are improved.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention provides a method for forming a thin film on a substrate in a chamber, the method for forming a thin film comprising the step of changing the position of the substrate at least once between a first position in the chamber, a second position different from the first position, and a third position different from the first position.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/04 - Coating on selected surface areas, e.g. using masks
28.
SUBSTRATE HEATING DEVICE AND SUBSTRATE PROCESSING DEVICE COMPRISING SAME
Provided are a substrate heating device and an apparatus for processing a substrate having the same, and more particularly, to a substrate heating device that heats a substrate and an apparatus for processing a substrate having the same. The substrate heating device includes a substrate support part configured to seat a substrate thereon and a plurality of heaters which is provided below the substrate support part and each of which includes a connection terminal provided on an end of each of the plurality of heaters and a heat generation body extending from the connection terminal in one direction. The plurality of heaters are disposed alternatively so that partial areas comprising the ends overlap each other in a direction crossing the one direction.
The present inventive concept relates to a thin-film transistor and a manufacturing method therefor. The thin film transistor
comprises: a gate electrode; an active layer spaced apart from the gate electrode; a source electrode provided on one side of the
active layer; a drain electrode provided on the other side of the active layer; and a contact layer provided in at least one between the
active layer and the source electrode and between the active layer and the drain electrode. The contact layer includes a first metal
oxide of at least one selected from Zn, In, and Ga.
The present inventive concept relates to a substrate processing device, comprising: a chamber; a chamber lid that supports the upper portion of the chamber; a susceptor that is installed to face the chamber lid and supports a substrate; a gas ejection unit that ejects a plurality of gases; and an anti-sag bolt that is installed in the chamber lid and can be combined with the gas injection unit, wherein the anti-sag bolt includes a plurality of flow paths through which a plurality of gases can flow.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
A substrate processing apparatus according to an example embodiment includes a chamber having a sidewall, a susceptor having an inclined side surface and mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a dielectric material, a lower dome covering a lower surface of the chamber and formed of a dielectric material, and a liner disposed inside the chamber and disposed between the upper dome and the lower dome. The liner may include an inclined portion having an inclined inner side surface opposing the included side surface of the susceptor.
The present disclosure relates to a tandem solar cell, and more particularly, to a tandem solar cell in which a plurality of solar cells are electrically connected. The tandem solar cell in accordance with an exemplary embodiment of the present disclosure includes a first solar cell unit having a first upper electrode and a first lower electrode that are disposed spaced apart from each other, a second solar cell unit provided under the first solar cell unit and having a second upper electrode and a second lower electrode that are disposed spaced apart from each other, a first output terminal connected to the first upper electrode, a second output terminal connected to the second lower electrode, and a third output terminal connected to both the first lower electrode and the second upper electrode.
Etching machines used for manufacturing light emitting diodes (LEDs); atomic layer deposition (ALD) machines used for manufacturing light emitting diodes (LEDs); deposition machines used for manufacturing light emitting diodes (LEDs); etching machines used for manufacturing organic light emitting diodes (OLEDs); atomic layer deposition (ALD) machines used for manufacturing organic light emitting diodes (OLEDs); deposition machines used for manufacturing organic light emitting diodes (OLEDs); metal organic chemical vapor deposition machines; etching machines used for manufacturing semiconductors; atomic layer deposition (ALD) machines used for manufacturing semiconductors; deposition machines used for manufacturing semiconductors; semiconductor processing machines; low pressure chemical vapor deposition machines; etching machines used for manufacturing solar cells; atomic layer deposition (ALD) machines used for manufacturing solar cells; deposition machines used for manufacturing solar cells; etching machines used for manufacturing flat panel displays; atomic layer deposition (ALD) machines used for manufacturing flat panel displays; deposition machines used for manufacturing flat panel displays; plasma enhanced chemical vapor deposition machines; plasma chemical vapor deposition machines
34.
METHOD FOR FORMING CRYSTALLINE SILICON LAYER AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME
The present invention provides a method for forming a silicon layer on a substrate, the method comprising the steps of: a) forming a first plasma while spraying a silicon-containing gas and a hydrogen-containing gas onto a substrate; and b) forming a crystalline silicon layer by forming a second plasma on the substrate using one or more gases from argon (Ar), hydrogen (H2), helium (He), and germanium (Ge) gases.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
The present disclosure relates to an apparatus for injecting a gas, an apparatus for processing a substrate, and a method for depositing a thin-film, and more specifically, to an apparatus for injecting a gas to deposit a thin-film by injecting a gas to a substrate, an apparatus for processing a substrate, and a method for depositing a thin-film. An apparatus for injecting a gas in accordance with an exemplary embodiment includes: a first electrode in which a first gas supply path and a second gas supply path are separately defined and which has first and second gas supply holes connected to the first and second gas supply paths, respectively; and a second electrode which is electrically insulated from and spaced apart from the first electrode and has a plurality of openings arranged alternately with the first and second supply holes.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/507 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
The present inventive concept is a substrate processing method in which processing steps are carried out on a substrate supported on a support unit in a processing space that is divided into a first processing area and a second processing area, the substrate processing method comprising: a step in which a first gas and a first purge gas are sprayed in the first processing area; and a step in which a second purge gas and a second gas are sequentially sprayed in the second processing area.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present invention provides a method for forming a capacitor, the method comprising the steps of: forming a first electrode layer, containing titanium nitride (TiN), on a substrate; forming a first barrier layer, containing titanium oxynitride (TiON), on the first electrode layer; and forming a dielectric layer, containing titanium oxide (TiO), on the first barrier layer.
The present inventive concept relates to an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device the method comprising: a deposition cycle step of performing a deposition cycle for depositing an IGZO channel layer on a substrate; and a repeat step of repeatedly performing the deposition cycle step until the IGZO channel layer is formed with a predetermined thickness, wherein in the deposition cycle step, the IGZO channel layer is formed by performing an indium oxide sub-cycle for depositing indium oxide (InO), a gallium oxide sub-cycle for depositing gallium oxide (GaO), and a zinc oxide sub-cycle for depositing zinc oxide (ZnO).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention relates to a gas supply apparatus, comprising: a chamber including a processing area divided into a first area and a second area; first gas blocks of n rows formed at the top of the first area; and second gas blocks of m rows formed at the top of the second area, wherein the number of first supply units of the n rows is greater than the number of second supply units of the m rows (n>m).
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Provided is a method for manufacturing a transistor, and more particularly, a method for manufacturing a transistor, which is performed to manufacture a transistor having improved characteristics. The method for manufacturing the transistor including a metal line and a channel layer includes preparing a substrate patterned to expose a first channel layer comprising metal oxide; and forming a second channel layer on an exposed surface of the first channel layer by using at least one of IGZO, IZO, InO, or ZnO.
The present invention relates to a layer formation method and, more specifically, to a semiconductor device manufacturing method for forming a semiconductor device through a low-temperature process. The layer formation method according to an embodiment of the present invention is a method for manufacturing a semiconductor device which comprises a silicon substrate containing germanium (Ge) or a substrate on which a silicon layer containing germanium (Ge) is formed, and which comprises an undoped gallium nitride (GaN) layer, an N-type gallium nitride (GaN) layer, an active layer and a P-type gallium nitride (GaN) layer, wherein a step of forming at least one gallium nitride layer from among the undoped gallium nitride (GaN) layer, the N-type gallium nitride (GaN) layer, the active layer and the P-type gallium nitride (GaN) layer comprises the steps of: a) sequentially supplying a gallium (Ga) precursor and a nitrogen (N2) precursor at 500° C. or lower, thereby forming a gallium nitride (GaN) layer on the substrate; and b) exposing the gallium nitride (GaN) layer to a hydrogen-containing plasma, and steps a) and b) are repeated multiple times.
The purpose of the present invention is to provide a method for forming an electronic device on a substrate, and an electronic device formed thereby, the method comprising the steps of: spraying a gas containing a Group III element onto the substrate; forming a first layer containing a Group III-V element by forming a first plasma containing a nitrogen element while spraying a gas containing a Group V element onto the substrate; and forming a second plasma containing a nitrogen element on the first layer containing the Group III-V element, wherein the first plasma does not contain hydrogen atoms.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present inventive concept relates to a gas supply apparatus for a substrate processing apparatus, the gas supply apparatus comprising: a first supply line connected to a first gas spray unit; a plurality of first gas supply devices connected to the first supply line; a first measurement device measuring a first pressure at the first supply line; a second supply line connected to a second gas spray unit; a plurality of second gas supply devices connected to the second supply line; and a second measurement device measuring a second pressure at the second supply line, wherein the first measurement device checks if the first pressure deviates from a first reference value, and the second measurement device checks if the second pressure deviates from a second reference value.
222) includes a step for supplying a titanium (Ti)-containing gas onto the substrate, a step for supplying an oxygen (O)-containing gas onto the substrate, and a step for forming a plasma of a helium (He)- or germanium (Ge)-containing gas on the substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
45.
PARTITION WALL OF SUBSTRATE SUPPORT PART, SUBSTRATE SUPPORT PART, AND SUBSTRATE PROCESSING APPARATUS
The present invention relates to a partition wall of a substrate support part, the substrate support part, and a substrate processing apparatus. The partition wall, which is formed on the substrate support part facing a gas injection part for injecting a gas, comprises: a protrusion extending from the central region of a support of the substrate support part toward the gas injection part; a first partition section protruding toward the gas injection part and extending from one end of the protrusion toward one end of the support; and a second partition section protruding toward the gas injection part and extending from the other end of the protrusion toward the other end of the support.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
46.
METHOD FOR FORMING CARBON LAYER AND SUBSTRATE PROCESSING METHOD USING SAME
The present invention provides a method for forming a carbon layer and a substrate processing method using same. The method for forming a carbon layer comprises: a step for supplying a carbon-containing gas onto a first layer containing silicon; a first plasma processing step for supplying an inert gas onto the first layer and forming a first plasma; and a second plasma processing step for supplying an oxygen-containing gas and forming a second plasma after the first plasma processing step.
In accordance with an exemplary embodiment, a method for forming a barrier layer, which forms a barrier layer on a substrate by generating plasma, includes: injecting a NH3-containing gas to be adsorbed onto the substrate; primarily purging of injecting a purge gas toward the substrate after the injecting of the NH3-containing gas is stopped; generating plasma by using a H2 gas; injecting a Ti-containing gas toward the substrate to form a TiN thin-film on the substrate; and secondarily purging of injecting a purge gas toward the substrate after the injecting of the Ti-containing gas is stopped, and the method form one process cycle of sequentially performing the injecting of the NH3-containing gas, the primarily purging, the generating of the plasma, the injecting of the Ti-containing gas, and the secondarily purging. In accordance with exemplary embodiments, a barrier layer made of a TiN thin-film may be formed by an ALD method at a low temperature. Thus, the substrate or the thin-film formed on the substrate may be prevented from being damaged by high-temperature heat. Thus, a device including the barrier layer may be prevented from being defected or improved in performance. Also, impurities on the barrier layer may be removed by generating hydrogen plasma. Thus, degradation in quality of the device or the barrier layer caused by the impurities may be prevented.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
An electrode forming method for a semiconductor device in accordance with exemplary embodiments includes preparing a substrate, injecting a precursor containing a low-resistance metal element onto the substrate, and forming a low-resistance metal thin film layer by injecting a gas containing hydrogen (H) or oxygen (O) onto the substrate. Therefore, in accordance with exemplary embodiments, it is possible to provide an electrode from which ligand impurities derived from a precursor containing a low-resistance metal element are removed. Therefore, it is possible to provide an electrode with low resistance.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
The present invention relates to a method for forming a metal oxide film, the method comprising the steps of: preparing a substrate; (i) supplying a precursor comprising indium onto the substrate; (ii) supplying a precursor comprising silicon onto the substrate; (iii) supplying a gas comprising oxygen onto the substrate; and (iv) repeating steps (i) and (ii) N times (N is a natural number).
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
Provided are a gas injection device, an apparatus for processing a substrate, and a method for depositing a thin film, and more particularly, a gas injection device that injects a gas onto a substrate to deposit a thin film, an apparatus for processing a substrate, and a method for depositing a thin film. A gas injection device in accordance with an exemplary embodiment include a first plate in which a first gas supply path and a second gas supply path are provided to be separated from each other and which has a first gas supply hole and a second gas supply hole, which are connected to the first gas supply path and the second gas supply path, respectively, and a second plate spaced apart from the first plate and having a plurality of openings arranged alternately with the first gas supply hole and the second gas supply hole.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
The present invention relates to a substrate processing apparatus and a thin-film forming method and, more specifically, to a substrate processing apparatus for forming a thin film by injecting gas onto a substrate. A substrate processing apparatus according to an embodiment of the present invention comprises: a chamber; a substrate support unit capable of supporting a plurality of substrates and installed in the chamber; and a gas injection unit installed in the chamber to inject gas toward the substrate support unit, wherein the gas injection unit comprises: a first plate having a first gas supply hole through which a first gas may be supplied and a second gas supply hole through which a second gas may be supplied; and a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of gas injection holes.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Provided is an apparatus for packing a semiconductor, and more particularly, to an apparatus for packing a semiconductor, which packages a semiconductor element in a wafer level packaging manner. The apparatus for packaging the semiconductor includes a loading unit having a space in which a process of disposing a mask member on a wafer including a plurality of semiconductor elements is performed, a deposition unit having a space, in which a process of transferring the wafer and the mask member from the loading unit to form a conductive pattern layer on the wafer is performed, and connected to the loading unit, and an unloading unit having a space, in which a process of transferring the wafer and the mask member from the deposition unit to separate the mask member from the wafer is performed, and connected to the deposition unit.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
53.
METHOD OF MANUFACTURING POWER SEMICONDUCTOR ELEMENT
Provided is a method for manufacturing a power semiconductor device, which includes forming an active layer including a first active layer and a second active layer, which are doped with impurities different from each other, on an SiC substrate. The forming of the active layer includes preparing the SiC substrate comprising a first area and a second area, sequentially injecting a source gas mixed with a first doping gas, a purge gas, a reactant gas, and a purge gas onto the first area of the SiC substrate to form the first active layer, and sequentially injecting a source gas mixed with a second doping gas, a purge gas, a reactant gas, and a purge gas onto the second area of the SiC substrate to form the second active layer. The second doping gas and the first doping gas include elements different from each other, respectively. Thus, in accordance with exemplary embodiments, the active layer may be formed at a low temperature. Thus, the substrate or the thin film formed on the substrate may be prevented from being damaged by the high-temperature heat. In addition, the power or time required for heating the substrate to form the active layer may be saved, and the overall process time may be shortened. In addition, the active layer may be crystallized to be formed. That is, the crystallized active layer may be formed while forming the active layer at the low temperature.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
54.
SUBSTRATE PROCESSING DEVICE AND THIN FILM FORMATION METHOD
The present invention relates to a substrate processing device and a thin film formation method, the device comprising: a chamber; a heater arranged inside the chamber; a lifting unit for lifting/lowering the heater; a substrate support inserted to be liftable/lowerable with respect to the heater; a substrate support lifting unit for lifting/lowering the substrate support; and an injection unit for injecting gas into the inside of the chamber, wherein the substrate support supports the substrate such that the bottom surface of the substrate is spaced apart from the top surface of the heater, and the injection unit exposes the substrate to the gas in a state in which the bottom surface of the substrate loaded on the substrate support is spaced apart from the top surface of the heater.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present invention provides a method for manufacturing a solar cell, comprising a step of forming a first semiconductor layer on one surface of a substrate, wherein the step of forming a first semiconductor layer comprises repeatedly performing a cycle that includes a step of forming an amorphous semiconductor layer and a step of crystallizing at least a portion of the amorphous semiconductor layer, the step of forming an amorphous semiconductor layer comprises supplying a silicon-containing gas and a first gas, and the step of crystallizing at least a portion of the amorphous semiconductor layer comprises forming plasma that includes a second gas.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
56.
OXIDE TRANSISTOR AND METHOD FOR MANUFACTURING SAME
The present inventive concept provides a method of manufacturing an oxide transistor, the method comprising: a step of forming a first channel layer by supplying a gas containing indium (In) and zinc (Zn) and supplying a gas containing oxygen; a step of forming a spacer on the first channel layer by supplying a gas containing gallium (Ga) and supplying a gas containing oxygen; and a step of forming a second channel layer on the spacer by supplying a gas containing indium (In) and zinc (Zn) and supplying a gas containing oxygen, and an oxide transistor made by the method.
The present invention relates to a substrate processing system and a substrate processing method, which are capable of generating diagnostic data including information related to a processing state of a substrate. The substrate processing system according to an embodiment of the present invention comprises: a substrate processing unit for treating a substrate according to a set processing condition; a substrate inspection unit for monitoring a plurality of substrates treated by the substrate processing unit; an analysis unit capable of generating, from information monitored by the substrate inspection unit for a predetermined time period, diagnostic data including information related to the processing state of the substrate treated by the substrate processing unit; and a control unit, which can receive the diagnostic data generated by the analysis unit and transmit same to the outside, wherein the substrate inspection unit monitors a first area of a first substrate and a second area of a second substrate from among a plurality of substrates, the first area and the second area being different from each other with respect to at least one area.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
58.
METHOD FOR FORMING GRAPHENE LAYER AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME
The present invention provides a method for forming a graphene layer, the method comprising the steps of: spraying hydrocarbon gas on a substrate and forming first plasma; and forming second plasma on the substrate, wherein the step of spraying hydrocarbon gas and forming the first plasma is performed without the supply of hydrogen gas.
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present invention relates to a method for forming a III-V thin film, comprising the steps of: spraying one or more gases containing group III elements; and spraying one or more gases containing group V elements.
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
60.
SUBSTRATE SUPPORT APPARATUS, SUBSTRATE PROCESSING EQUIPMENT AND SUBSTRATE PROCESSING METHOD
The present invention relates to a substrate support apparatus, substrate processing equipment and a substrate processing method, and, more specifically, to a substrate support apparatus, a substrate processing apparatus and a substrate processing method for rotating a substrate to the opposite surface. According to an embodiment of the present invention, the substrate support apparatus capable of gripping and flipping a substrate comprises: a gripping unit including a pair of arms that can be opened and closed to grip the edges of the substrate; a driving unit including a shaft extending in one direction, and a driving source capable of moving the shaft in one direction and rotating same around the one direction; and a connection unit for connecting the gripping unit and the driving unit so that the pair of arms are opened and closed in conjunction with the movement of the shaft in the one direction and are rotated in conjunction with the rotation of the shaft.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a thin film forming method and, more specifically, to a thin film forming method for forming a group III-V thin film on a substrate. A thin film forming method according to an embodiment of the present invention is directed to a method for forming a group III-V thin film on a substrate including a structure layer, wherein the method comprises the steps of: supplying a source gas containing a group III element to the structure layer; and supplying a reactant gas containing a group V element to the structure layer.
The present inventive concept relates to: a method for producing a thin film, the method comprising a first forming step for forming a first thin film layer on a substrate by spraying a first source gas comprising a high dielectric constant (High-k) material, a second forming step for forming a second thin film layer on the substrate by spraying a second source gas comprising a high dielectric constant material, and a crystallization step for crystallizing at least one among the first thin film layer and the second thin film layer by using plasma; a thin film; and a substrate processing apparatus.
Provided is an electronic element including: a light-receiving element including a first active layer; a light-emitting element including a second active layer; and a switch for turning on or off at least one of the light-receiving element and the light-emitting element, wherein a first semiconductor layer and a third semiconductor layer, containing nitride doped with an N type, and a second semiconductor layer containing nitride doped with a P type are included, and the switch includes first and second switches so that an electric field is formed between first and third electrodes and between second and fourth electrodes in response to driving of the first and second switches.
H10F 55/00 - Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto
H10F 77/14 - Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/831 - Electrodes characterised by their shape
H01H 13/83 - Switches having rectilinearly-movable operating part or parts adapted for pushing or pulling in one direction only, e.g. push-button switch having a plurality of operating members associated with different sets of contacts, e.g. keyboard characterised by legends, e.g. Braille, liquid crystal displays, light emitting or optical elements
64.
GAS INJECTION APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND THIN FILM FORMATION METHOD
The present invention relates to a gas injection apparatus, a substrate processing apparatus, and a thin film formation method and, more specifically, to a gas injection apparatus, a substrate processing apparatus, and a thin film formation method, which are for depositing a thin film by injecting gas onto a substrate. The gas injection apparatus according to an embodiment of the present invention comprises: a first plate having first gas supply ports capable of supplying a first gas and second gas supply ports capable of supplying a second gas; a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of openings arranged to be offset from the first gas supply ports and the second gas supply ports, wherein the openings include: first openings formed on the first plate side; and second openings connected to the first openings and having a length equal to or smaller than that of the first openings.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
The present inventive concept relates to a gas supply method of a substrate processing apparatus including: a first step of supplying a first source carrier gas from a first source carrier supply unit to a source storage unit to supply a source of the source storage unit to a vaporizer at a certain flow rate through a Mass Flow Controller; a second step of vaporizing the source supplied via the Mass Flow Controller from the source storage unit by using the vaporizer, based on a second source carrier gas supplied from a second source carrier supply unit to the vaporizer; a third step of supplying the source, vaporized by the vaporizer, to the chamber through a second source line; and a fourth step of stopping supply of the source of the source storage unit on the vaporizer and supplying the second source carrier gas to the vaporizer.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
66.
RAW MATERIAL SUPPLY DEVICE, SUBSTRATE PROCESSING DEVICE, AND RAW MATERIAL SUPPLY METHOD
The present invention relates to a raw material supply device for supplying a raw material to a chamber in which a process for processing a substrate is performed, and to the raw material supply device, a substrate processing device, and a raw material supply method, the raw material supply device comprising: a plurality of canisters for storing the raw material; a connection part having one end connected to the canisters and the other end connected to the chamber; and a plurality of supply valves for selectively opening or closing each of the canisters individually with respect to the inside of the connection part, wherein each of the canisters includes a heating part for heating the raw material, and each of the canisters is detachably mounted to the connection part.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/52 - Controlling or regulating the coating process
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
67.
METHOD FOR FORMING ALUMINUM NITRIDE THIN FILM AND METHOD FOR FORMING THIN FILM INCLUDING SAME
An embodiment of the present invention relates to a method for forming an aluminum nitride thin film on a substrate supported in a process space inside a chamber, the method comprising the steps of: (a) exposing the substrate to an aluminum-containing gas; (b) exposing the substrate to a nitrogen-containing gas to form an atomic layer or monolayer containing aluminum and nitrogen; and (c) exposing the substrate to a nitrogen-containing plasma, wherein steps (a) to (c) may be repeated multiple times. Therefore, according to embodiments of the present invention, an aluminum nitride single-crystal thin film can be formed at a low temperature. That is, the aluminum nitride thin film can be crystallized even when the temperature of the substrate is adjusted to a low temperature. Therefore, when forming the aluminum nitride single-crystal thin film, it is possible to suppress or prevent damage to an underlying film caused by high-temperature heat.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/507 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
A method for forming a capacitor electrode in accordance with an exemplary embodiment includes a step of forming a TiN thin-film by injecting a source containing titanium (Ti) and a reactant containing nitrogen and a step of forming SiN thin-film by injecting a source containing silicon (Si) and a reactant containing nitrogen, and at least one of the source containing titanium (Ti) and the source containing silicon (Si) is injected a plurality of times.
A method for forming a capacitor electrode in accordance with an exemplary embodiment includes a step of forming a TiN thin-film by injecting a source containing titanium (Ti) and a reactant containing nitrogen and a step of forming SiN thin-film by injecting a source containing silicon (Si) and a reactant containing nitrogen, and at least one of the source containing titanium (Ti) and the source containing silicon (Si) is injected a plurality of times.
Thus, in accordance with exemplary embodiments, when at least one of a lower electrode and an upper electrode of a capacitor is formed by laminating the TiN thin-film and the SiN thin-film, a deposition speed of the SiN thin film may be improved, and step coverage of the thin film may be improved.
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H10D 1/68 - Capacitors having no potential barriers
The present invention relates to a method for forming a gallium nitride film on a substrate in a chamber, the method comprising the steps of: injecting a gallium-containing source gas onto the substrate; and injecting a nitrogen-containing reactant gas onto the substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
The present inventive concept relates to a substrate processing apparatus comprising: a chamber; a substrate support part for supporting a substrate inside the chamber; a gas injection unit including a plurality of first injection holes for injecting a first process gas toward the substrate and a gas inlet part communicating with the first injection holes and for introducing the first process gas; a gas supply unit including a gas supply connection part connected to the gas inlet part and supplying the first process gas to the gas injection unit; and a sealing part for maintaining airtightness between the gas inlet unit and the gas supply connection unit.
F16L 21/035 - Joints with sleeve or socket with elastic sealing rings between pipe and sleeve or between pipe and socket, e.g. with rolling or other prefabricated profiled rings placed around the spigot end before connection
F16L 21/03 - Joints with sleeve or socket with elastic sealing rings between pipe and sleeve or between pipe and socket, e.g. with rolling or other prefabricated profiled rings placed in the socket before connection
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a method for forming a gallium nitride (GaN) film on a substrate, the method comprising the steps of: forming a first gallium nitride film by supplying a gallium precursor and a nitrogen-containing gas onto the substrate; and forming a second gallium nitride film by supplying a gallium precursor and subsequently supplying a nitrogen-containing gas onto the substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
72.
RETAINER, HEATER, CHAMBER FOR SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING APPARATUS
The present invention relates to a retainer, a heater, a chamber for a substrate processing apparatus, and a substrate processing apparatus. The apparatus comprises a heater for heating the inside of a chamber and a retainer inserted into a housing coupled to the chamber so as to contain the heater, thereby retaining the heater. The retainer is elastically deformed to be inserted into an opening formed in the housing from outside the housing, thereby retaining and supporting the heater on the housing.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
73.
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Provided are a thin film transistor and a method for manufacturing the same, and more particularly, to a thin film transistor having improved characteristics and a method for manufacturing the same. A thin film transistor in accordance with an exemplary embodiment includes a gate electrode, an active layer containing oxide of a first metal element and disposed to be vertically spaced apart from the gate electrode, source and drain electrodes disposed to be spaced apart from each other on the active layer, and a contact layer disposed between the active layer and the source and drain electrodes.
The present invention provides an electric/electronic device comprising: a substrate; a thin film layer formed on the substrate; and a first encapsulation layer formed on the thin film layer, wherein the first encapsulation layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate. The present invention aims at providing an electric/electronic device, a method for manufacturing same, and a substrate processing apparatus for forming same, in which, by forming an encapsulation layer, the electric/electronic device having the effect of blocking moisture or oxygen introduced from the outside through the upper surface, side surface, and lower surface of the electric/electronic device.
The present invention relates to a thin film forming method, and a transistor and a capacitor which are manufactured using same and, more specifically, to a thin film forming method for forming a metal oxide thin film, and a transistor and a capacitor which are manufactured using same. The thin film forming method according to an embodiment of the present invention is a thin film forming method for forming a thin film on a substrate provided in a reaction space, by using an atomic layer deposition process in which a step of supplying a raw material gas and a step of supplying a reaction gas are sequentially performed, the method including a step of forming a dielectric layer containing a metal by performing a step of supplying a hydrogen-containing gas after at least one of the step of supplying the raw material gas and the step of supplying the reaction gas, wherein the step of supplying the hydrogen-containing gas includes a step of applying power to the reaction space.
The present invention relates to a substrate processing apparatus and a substrate processing method, the substrate processing apparatus comprising: a chamber in which a processing process for a substrate is performed; a substrate support unit that supports the substrate inside the chamber; an acquisition unit that acquires data by detecting a state of the substrate; and a control unit that determines state information of the substrate by using the data acquired by the acquisition unit, wherein the state information includes at least one of a damage state of the substrate and an unloadable state of the substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
An embodiment of the present invention provides a method for forming a gallium nitride thin film on one or more substrates, arranged in an inner space of a chamber in which a gas spray unit is installed, by using the gas spray unit. The gas spray unit comprises: a first electrode provided with a base electrode and a protruding electrode that extends and protrudes below the base electrode; and a second electrode separately disposed below the protruding electrode, wherein the protruding electrode passes through a hole formed in the second electrode, a first gas flow path is formed inside the protruding electrode, and a second gas flow path is formed inside the first electrode so that gas can be sprayed above the second electrode. The method may comprise the steps of: using the first gas flow path to spray a gallium-containing source gas toward the one or more substrates; and using the second gas flow path to spray a nitrogen-containing reactant gas toward the substrates and using the potential difference between the first electrode and the second electrode to generate a hydrogen plasma and thereby form the gallium nitride thin film. Therefore, according to embodiments of the present invention, a gallium nitride thin film and a silicon carbide thin film that have high densities can be formed at low temperatures.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
The present invention relates to a method for manufacturing a solar cell on a glass substrate and provides a method for manufacturing a solar cell, the method comprising the steps of: forming a reflective layer on one surface of the glass substrate; and forming an electron transport layer or a hole transport layer on the reflective layer, wherein the reflective layer is formed by a deposition method.
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/15 - Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
79.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The present invention relates to a substrate processing apparatus and a substrate processing method. This substrate processing apparatus comprises: a chamber; a susceptor on which at least three substrates are placed; and a gas injection unit that injects gas toward the plurality of substrates, wherein the gas injection unit comprises: a first injection unit that injects a source gas; a second injection unit that injects a reactant gas; a third injection unit that injects a surface treatment gas; and a plasma electrode that forms plasma in at least one of the first injection unit, the second injection unit, and the third injection unit.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
The present inventive concept provides a method of forming a dielectric film comprising a step of supplying a first source gas; a step of supplying a first purge gas; a step of supplying a first reaction gas; and a step of supplying a second purge gas, wherein the step of supplying the first source gas comprises supplying a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition apparatus, and wherein the step of supplying the first reaction gas comprises supplying a compound selected from the group consisting of O3 and H2O into the vacuum deposition apparatus.
34254 4 (where R1 includes a metal selected from the group consisting of Pb, Sn, Ge, Sb, Bi, and Ba), and iii) at least one hydrogen halide selected from the group consisting of HI, HBr, Hf, and HCl.
H10K 30/84 - Layers having high charge carrier mobility
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 71/60 - Forming conductive regions or layers, e.g. electrodes
82.
METHOD FOR FORMING GRAPHENE ELECTRODE AND METHOD FOR MANUFACTURING SOLAR CELL USING SAME
The present invention provides a method for forming a graphene electrode, the method comprising: a step for supplying a silicon-containing gas onto a substrate; a step for supplying a carbon-containing gas onto the substrate; and a step for forming hydrogen plasma on the substrate. The present invention also provides a method for manufacturing a solar cell using the graphene electrode.
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
Semiconductor processing machines; low pressure chemical vapor deposition machines; plasma chemical vapor deposition machines; plasma enhanced chemical vapor deposition machines; metal organic chemical vapor deposition machines; deposition machines used for manufacturing semiconductor; etching machines used for manufacturing semiconductor; deposition machines used for manufacturing solar cells; etching machines used for manufacturing solar cells; deposition machines used for manufacturing light emitting diode (LED); etching machines used for manufacturing light emitting diode (LED); deposition machines used for manufacturing Organic Light Emitting Diodes (OLED); etching machines used for manufacturing Organic Light Emitting Diodes (OLED); deposition machines used for manufacturing Flat Panel Display; etching machines used for manufacturing Flat Panel Display; atomic layer deposition (ALD) machines used for manufacturing semiconductor; atomic layer deposition (ALD) machines used for manufacturing solar cells; atomic layer deposition (ALD) machines used for manufacturing light emitting diode (LED); atomic layer deposition (ALD) machines used for manufacturing Organic Light Emitting Diodes (OLED); atomic layer deposition (ALD) machines used for manufacturing Flat Panel Display
A method for forming a silicon carbide film on a substrate accommodated in a chamber according to an embodiment of the present invention may include the steps of: injecting a silicon (Si)-containing gas into the chamber; forming an amorphous silicon carbide film on the substrate by forming first hydrogen plasma in the chamber while injecting a carbon (C)-containing gas into the chamber; and crystallizing the amorphous silicon carbide film by forming second hydrogen plasma in the chamber. Therefore, according to embodiments of the present invention, a crystalline silicon carbide film can be formed at a low temperature. That is, a crystalline silicon carbide film having few or no defects can be formed.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/507 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
The present invention relates to a load lock chamber, a substrate processing system, and a substrate processing method, wherein the load lock chamber comprises: a chamber body connected to a substrate storage unit for storing substrates and a transfer chamber for transferring the substrates; a first gate valve provided between the substrate storage unit and the chamber body; a second gate valve provided between the chamber body and the transfer chamber; and an ion spray unit for spraying ions to the substrates.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a substrate processing method and, more specifically, to a substrate processing method for growing a thin film on a substrate. The substrate processing method according to an embodiment of the present invention includes: a preparation step of preparing a substrate in a reaction space; a cleaning step of exposing the substrate to first plasma; a thin film forming step of forming a thin film on the substrate; and an etching step of exposing, to second plasma, the substrate on which the thin film is formed.
The present invention relates to a substrate processing method, a substrate processing apparatus, and a semiconductor device and, more specifically, to a substrate processing method for depositing a thin film on a substrate having through-holes formed therein, a substrate processing apparatus, and a semiconductor device. A substrate processing method according to an embodiment of the present invention includes the steps of: preparing a substrate having a semiconductor device region and a dummy region, wherein through-holes are formed in each of the semiconductor device region and the dummy region; and forming thin films on both surfaces of the substrate including all or part of the semiconductor device region and part of the dummy region.
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 23/58 - Structural electrical arrangements for semiconductor devices not otherwise provided for
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
89.
SUBSTRATE PROCESSING APPARATUS AND INTERLOCK METHOD THEREOF
Disclosed herein are a substrate processing apparatus and an interlock method thereof, which can generate an interlock signal, when the temperature of each upper or lower electrode in a process chamber exceeds a range set by a user, thereby cutting off application of RF power to the substrate processing apparatus. According to the substrate processing apparatus and the interlock method thereof, in an emergency where the temperatures of the upper and lower electrodes, a difference therebetween, an inter-electrode distance, and the resistance value of each electrode are out of the respective ranges set by the user, an interlock signal and an alarm signal can be generated to cut off the application of RF power to the substrate processing apparatus. Thus, it is possible to protect equipment by preventing the equipment from being damaged by RF power and to maintain the uniformity of a thin film deposited on a substrate.
The present inventive concept relates to a method for treatment of a substrate having an insulating layer and an electrode layer formed thereon, the method comprising: a plasma treatment step of treating the substrate with plasma by using treatment gas containing fluorine (F); a selective adsorption step of spraying the substrate, subjected to the plasma treatment step, with source gas containing a high-k material to adsorb the high-k material only on the electrode layer; and a selective deposition step of spraying the substrate, subjected to the selective adsorption step, with reaction gas to deposit a high-k layer only on the electrode layer.
The present invention provides a thin film forming method and a manufacturing method for an electroluminescent display device using same, a method for forming a thin film on a substrate having a first sub-pixel area and a second sub-pixel area, the method including a step of forming a first light emitting layer in the first sub-pixel area, wherein the step of forming of a first light emitting layer in the first sub-pixel area includes forming of a semiconductor layer containing gallium (Ga) in the first sub-pixel area.
The present invention relates to a canister and a substrate treatment apparatus, the canister comprising: a canister body for storing a source material; an inlet part for introducing carrier gas, supplied from an injection part, into the canister body; and an outlet part for discharging the source material, stored in the canister body, to the outside, wherein the inlet part has one end through which the carrier gas is supplied into the canister body and the other end which is connected to the injection part, and the one end of the inlet part is disposed at a position spaced upward from the top of the source material stored in the canister body, so as to supply the carrier gas toward the top of the source material.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
B01F 27/96 - Mixers with rotary stirring devices in fixed receptaclesKneaders with stirrers rotating about a substantially vertical axis with openwork frames or cages
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
93.
SUBSTRATE PROCESSING APPARATUS, AND EDGE FRAME OF SUBSTRATE PROCESSING APPARATUS
The present invention relates to a substrate processing apparatus, and an edge frame of the substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a substrate support unit which is arranged inside the chamber and which is for supporting a substrate; an edge frame arranged on the substrate and the substrate support unit; and a step adjustment unit having a first interval between the substrate and the lower part of the edge frame.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
The present inventive concept provides a solar cell and a method for manufacturing the solar cell. The solar cell comprises a solar cell layer on a substrate and an encapsulation layer provided on the solar cell layer. The encapsulation layer comprises a metal oxide doped with a dopant material or a metal oxynitride doped with a dopant material; and the metal oxide or the metal oxynitride comprises at least one metal selected from the group consisting of W, Nb, and Sn.
A substrate processing apparatus according to an embodiment of the present invention comprises: a chamber for providing a processing space in which a substrate is processed; a gas supply unit for supplying gas to the substrate inside the chamber; a source material transfer line connected to the gas supply unit; and a storage container for supplying a SAM source material to the chamber through the source material transfer line.
H10K 30/82 - Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/15 - Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
H10K 30/86 - Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
H10K 30/85 - Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
H10K 39/15 - Organic photovoltaic [PV] modulesArrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
The present invention provides a method for cleaning a chamber for forming a perovskite compound, the chamber cleaning method comprising the steps of: exposing the inside of the chamber to a hydrogen (H)-containing gas plasma; and exposing the inside of the chamber to an oxygen (O)-containing gas plasma, wherein the step of exposing the inside of the chamber to an oxygen (O)-containing gas plasma is performed after the step of exposing the inside of the chamber to a hydrogen (H)-containing gas plasma.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present inventive concept relates to a thin film manufacturing method and a thin film. The thin film manufacturing method comprises: an adsorption step of adsorbing a high-k material on a substrate by spraying a source gas consisting of a high-k material; a deposition step of depositing a thin film consisting of the high-k material on the substrate by spraying a reaction gas that reacts with the source gas; and a crystallization step of crystallizing the high-k material using plasma.
The present inventive concept relates to an apparatus for processing a substrate, the apparatus comprising: a chamber which includes a lid on top; a first plate which is installed under the lid and in which a plurality of gas holes is formed; a second plate coupled to the first plate and including a plurality of gas holes that communicate with some of the plurality of gas holes of the first plate; and a distance adjustment part which is connected to the second plate, adjusts the distance between the lid and the first plate, and is connected to an RF power feeding line.
A substrate processing device. The device comprises: a first source supply unit; a second source supply unit; a first supply line for connecting the first source supply unit to a spraying unit; a second supply line for connecting the second source supply unit to the spraying unit; a mixing unit provided at the first supply line to be arranged between the first source supply unit and the spraying unit; a first connection line for connecting the second supply line to the first supply line and/or the mixing unit; and a first path change unit provided at a first connection point at which the first connection line is connected to the second supply line, wherein the first path change unit changes the flow path of a second source gas supplied from the second source supply unit.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/52 - Controlling or regulating the coating process
H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
The present invention relates to a method for forming a thin film on a substrate, the method comprising the steps of: preparing a substrate on which one or two or more films among a metal film, a metal oxide film, a silicon nitride (SiN) film, and a silicon oxide (SiO) film are formed; spraying a gallium (Ga)-containing source gas onto the substrate; and spraying a nitrogen (N)-containing reactant gas onto the substrate and forming a gallium nitride (GaN) film on the substrate at a temperature of 300-600°C.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
