A ZrO2 dispersion liquid containing, a ZrO2 particle coated with a silane coupling agent, and a dispersion medium for the ZrO2 particle, wherein a BET specific surface area of the ZrO2 particle coated with the silane coupling agent obtained by removing the dispersion medium is 36% or more of a BET specific surface area of the ZrO2 particle before coating with the silane coupling agent.
To establish an unprecedented novel method for producing D-luciferin and a D-luciferin derivative without using expensive 2-cyano-6-hydroxybenzothiazole that is obtained by a multi-stage production process. In the method for producing D-luciferin and a D-luciferin derivative, the above object is achieved via a novel substituted diaminodithioether represented by the following formula (1):
To establish an unprecedented novel method for producing D-luciferin and a D-luciferin derivative without using expensive 2-cyano-6-hydroxybenzothiazole that is obtained by a multi-stage production process. In the method for producing D-luciferin and a D-luciferin derivative, the above object is achieved via a novel substituted diaminodithioether represented by the following formula (1):
To establish an unprecedented novel method for producing D-luciferin and a D-luciferin derivative without using expensive 2-cyano-6-hydroxybenzothiazole that is obtained by a multi-stage production process. In the method for producing D-luciferin and a D-luciferin derivative, the above object is achieved via a novel substituted diaminodithioether represented by the following formula (1):
wherein X is H, OCH3 or OH; and Y, Z and W are H or monovalent organic groups, which serves as a precursor.
C07C 323/58 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton having the sulfur atoms of the thio groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being further substituted by nitrogen atoms, not being part of nitro or nitroso groups with amino groups bound to the carbon skeleton
C07C 319/20 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides by reactions not involving the formation of sulfide groups
C07D 417/04 - Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and sulfur atoms as the only ring hetero atoms, not provided for by group containing two hetero rings directly linked by a ring-member-to-ring- member bond
The purpose of the present invention is to provide a fluoroolefin production method, which has a high reaction conversion ratio and selectivity of a target substance, is capable of obtaining the target substance with a high yield, has a low ratio of by-products, does not generate liquid waste, and solves the problems of the prior art. The fluoroolefin production method is characterized in that a fluorinated alkane is subjected to a dehydrofluorination reaction in the presence of activated carbon containing a metal salt.
466) is produced by chlorination and dehydrochlorination from the dimer, and the hexachlorobutadiene is fluorinated to produce chlorofluorobutane (CFB).
C07C 17/281 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by addition reactions of only halogenated hydrocarbons of only one compound
Provided is an electrophotographic carrier comprising a resin-coated carrier comprising magnetic core material particles and a coating layer that coats the surfaces of the core material particles with a resin, wherein the coating layer at least includes an acrylic resin A that does not contain a styrene component, an acrylic resin B that contains a styrene component, and a fluororesin, and the ratio of the styrene component contained in all the acrylic resins in the coating layer is less than 45.2 mass %. Also provided is a two-component developer using the same. The ratio of a constituent unit derived from a styrene monomer in the acrylic resin B is preferably 30 mol % to 90 mol % inclusive with respect to all of the constituent units constituting the acrylic resin B.
G03G 9/113 - Developers with toner particles characterised by carrier particles having coatings applied thereto
G03G 9/107 - Developers with toner particles characterised by carrier particles having magnetic components
7.
USE OF 1,1,1,3,5,5,5-HEPTAFLUORO-2-PENTENE IN NONAQUEOUS ELECTROLYTIC SOLUTION, NONAQUEOUS ELECTROLYTIC SOLUTION CONTAINING 1,1,1,3,5,5,5-HEPTAFLUORO-2-PENTENE, AND SECONDARY BATTERY INCLUDING SAID NONAQUEOUS ELECTROLYTIC SOLUTION
Provided are: a new use application of 1,1,1,3,5,5,5-heptafluoro-2-pentene (HFO-1447), especially, a new use application of the HFO-1447 in a nonaqueous electrolytic solution; a nonaqueous electrolytic solution containing HFO-1447; and a secondary battery including said nonaqueous electrolytic solution. Also provided are: a use of 1,1,1,3,5,5,5-heptafluoro-2-pentene in a nonaqueous electrolytic solution; a nonaqueous electrolytic solution containing an electrolyte, which is 1,1,1,3,5,5,5-heptafluoro-2-pentene, and a nonaqueous organic solvent; and a secondary battery including said nonaqueous electrolytic solution.
A purpose of the present invention is to provide a method for producing 1,1,1,3,5,5,5-heptafluoro-2-pentene (HFO-1447) that is highly pure, particularly with a purity of higher than 99%. Another purpose of the present invention is to provide highly pure 1,1,1,3,5,5,5-heptafluoro-2-pentene (HFO-1447) and a use thereof. Provided is a method for producing 1,1,1,3,5,5,5-heptafluoro-2-pentene, said method comprising (a) reacting 3-chloro-hexafluoro-2-pentene with hydrogen fluoride at a temperature of higher than -10°C but not higher than 20°C in the presence of a metal halide catalyst to produce 3-chloro-1,1,1,3,5,5,5-heptafluoropentane, and then (b) subjecting the 3-chloro-1,1,1,3,5,5,5-heptafluoropentane obtained in (a) to a dehydrochlorination reaction in the presence of an activated carbon catalyst to produce 1,1,1,3,5,5,5-heptafluoro-2-pentene.
The purpose of the present invention is to provide a novel method for producing 3-chloro-1,1,1,5,5,5-hexafluoro-2-pentene Provided is a method for producing 3-chloro-1,1,1,5,5,5-hexafluoro-2-pentene, the method including a step for reacting 1,1,1,3,3,5,5,5-octafluoropentane with hydrogen fluoride. Also provided are: a method for producing 3-chloro-1,1,1,5,5,5-hexafluoro-2-pentene, the method including a step for reacting 1,1,3-trichloro-5,5,5-trifluoro-1,3-pentadiene with hydrogen fluoride; and a method for producing 3-chloro-1,1,1,5,5,5-hexafluoro-2-pentene, the method including a step for reacting 1,1,3,5,5,5-hexachloro-1,3-pentadiene with hydrogen fluoride.
Provided are: 1,1,1,5,5,5-hexafluoro-3-(2,2,2-trifluoroethoxy)-2-pentene which is a new compound; and a use application and a production method for the new compound. The present invention provides 1,1,1,5,5,5-hexafluoro-3-(2,2,2-trifluoroethoxy)-2-pentene. This new compound can be produced by, for example, reacting 1,1,1,5,5,5-hexafluoro-3-chloro-2-pentene and 2,2,2-trifluoro ethanol in the presence of a base. Further, the new compound is useful as an additive in a nonaqueous electrolytic solution of a secondary battery.
z is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.
Disclosed is A method for recovering lithium from slag containing at least aluminum and lithium, the slag being provided by melting a lithium-ion secondary battery to be disposed of to obtain molten metal containing valuable metal and molten slag containing at least aluminum and lithium and separating the slag containing at least aluminum and lithium from the molten metal containing valuable metal. The condition of the melting of the lithium-ion secondary battery is adjusted such that the slag has an aluminum to lithium mass ratio, Al/Lo, of 6 or less. The method includes: contacting the slag with an aqueous liquid to obtain a leachate containing lithium leached from the slag; and contacting the leachate with a basic substance to cause unwanted metal contained in the leachate to precipitate in the form of a slightly soluble substance, followed by solid-liquid separation to obtain a purified solution having lithium dissolved therein.
Provided is a method for recovering lithium from a material containing fluorine and lithium. The method includes: mixing the material with an aqueous sulfuric acid solution or water to prepare a mixed liquid; and mixing the mixed liquid with a slightly or sparingly soluble calcium-containing alkaline agent to form a precipitate containing fluorine and calcium, followed by solid-liquid separation to obtain a purified solution having lithium dissolved therein. In the preparation of the a mixed liquid, the material and the sulfuric acid aqueous solution or water are mixed and heated at 60° to 90° C.
Provided is a novel method for producing a diarylacetylene derivative. An alkyne derivative having aryl substituents at both ends is provided by subjecting a tetrahalogenated ethylene and phenylboronic acid to a cross-coupling reaction and then conducting a treatment with a base.
C07C 5/00 - Preparation of hydrocarbons from hydrocarbons containing the same number of carbon atoms
C07C 15/54 - Cyclic hydrocarbons containing only six-membered aromatic rings as cyclic part substituted by unsaturated hydrocarbon radicals polycyclic non-condensed containing a group with formula
C07C 25/24 - Halogenated aromatic hydrocarbons with unsaturated side chains
C07C 41/18 - Preparation of ethers by reactions not forming ether-oxygen bonds
C07C 43/215 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
C07C 17/25 - Preparation of halogenated hydrocarbons by splitting-off hydrogen halides from halogenated hydrocarbons
C10M 125/10 - Metal oxides, hydroxides, carbonates or bicarbonates
C10M 177/00 - Special methods of preparation of lubricating compositionsChemical modification by after-treatment of components or of the whole of a lubricating composition, not covered by other classes
Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.
2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
B08B 5/00 - Cleaning by methods involving the use of air flow or gas flow
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
B08B 7/04 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
An object is to provide a fluorine-containing copolymer composition that exhibits long-term stability as well as a fluororesin paint or varnish prepared using the composition.
An object is to provide a fluorine-containing copolymer composition that exhibits long-term stability as well as a fluororesin paint or varnish prepared using the composition.
Provided are: a composition comprising a fluorine-containing copolymer synthesized through copolymerization of 0.001 to 50 mol % of particular ethylenically unsaturated organosilicon compound polymerization units relative to 5 to 85 mol % of fluoroolefin polymerization units by a solution polymerization method, a solvent, and an amine compound; a fluororesin paint or varnish prepared using the composition; and a method of producing the fluorine-containing copolymer composition.
Provided is a tank container which can accommodate and transport powder formed of hazardous material powder or the like while suppressing the contact of the powder with moisture in the air and an increase in temperature to a temperature equal to or higher than a predetermined temperature, and which can also easily discharge the powder, and a method of manufacturing the tank container. A tank container includes: a tank main body portion formed into an airtight cylindrical shape, which is configured to accommodate powder therein, and which is closed at both ends along a longitudinal direction; a plurality of accommodation and discharge portions, which are arranged so as to be adjacent to each other along the longitudinal direction in a lower portion of the tank main body portion, which have base end portions each airtightly joined to an inner wall of the tank main body and to an adjacent portion, and which have distal end portions each formed into an inverted tapered shape so as to protrude outward respectively from openings formed on an outer peripheral surface of the tank main body portion; a heat insulating portion formed on the outer peripheral surface of the tank main body portion; and a container frame portion having the tank main body portion fixed thereto.
Coated zirconia fine particle containing a zirconia fine particle and a coating layer coating the surface of the fine particle. The coating layer includes one or more metal elements selected from Mg, Ca, Al and rare-earth elements, and the coated zirconia fine particle has an average particle size of 3 to 100 nm and a specific surface area of 20 to 500 m2/g.
01 - Chemical and biological materials for industrial, scientific and agricultural use
Goods & Services
Chemicals; chemicals in solid, liquid or gas form; fluorspar
compounds; gas for industrial purposes; caustics for
industrial purposes; chemical source material for the
deposition of thin films upon semiconductor wafers for the
manufacture of semiconductors; detergents for use in
manufacturing processes; halides; organometallic compounds.
An electrode for electrolytic fluorination contains nickel as a base material with a fluorine content <1,000 ppm. Preferably, in at least a surface portion thereof, the nickel content ≥99 mass %, the iron content ≤400 ppm, the copper content ≤250 ppm, and the manganese content ≤1,000 ppm. A method for producing an electrode includes arranging a nickel base material electrode in a nickel plating bath as a cathode, and applying nickel plating to the nickel base material electrode by electrolytic nickel plating, the method including (1) using, as an anode, a nickel component deposited on a cathode, or a nickel component that has settled in a molten salt, in a process of producing nitrogen trifluoride by molten salt electrolysis using a nickel base material anode, or the nickel base material anode; or (2) using, as the cathode, the nickel base material anode.
01 - Chemical and biological materials for industrial, scientific and agricultural use
Goods & Services
Industrial Chemicals; Industrial chemicals in solid, liquid or gas form; fluorspar compounds; industrial gases for use in the manufacture of semiconductors and liquid crystal displays; caustics for industrial purposes; chemical source material for the deposition of thin films upon semiconductor wafers for the manufacture of semiconductors; detergents for use in manufacturing processes; halides; organometallic compounds being industrial chemicals
An object is to prevent lowering in the yield of R—COF due to contamination by impurities and thereby to produce a high-purity product of R—COF in a stable manner. According to the present invention, provided are: a method of purifying a carboxylic acid fluoride, comprising a step of removing a hydrogen halide by bringing a carboxylic acid fluoride containing the hydrogen halide into contact with a metal fluoride; a method of producing a high-purity carboxylic acid fluoride, comprising a step of bringing a carboxylic acid fluoride containing a hydrogen halide into contact with a metal fluoride as well as a high-purity carboxylic acid fluoride obtained therefrom; and a method of using a metal fluoride as an adsorbent for a hydrogen halide in a method of removing a hydrogen halide from a carboxylic acid fluoride containing the hydrogen halide.
C07C 323/58 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton having the sulfur atoms of the thio groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being further substituted by nitrogen atoms, not being part of nitro or nitroso groups with amino groups bound to the carbon skeleton
C07C 319/14 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides
26.
Coating composition excellent in abrasion resistance
Impurities are removed from a fluoroolefin having a structure of ═CF2 or ═CHF that has been obtained by a dehydrohalogenation reaction and that contains haloalkene, haloalkane, and/or haloalkyne impurities.
Impurities are removed from a fluoroolefin having a structure of ═CF2 or ═CHF that has been obtained by a dehydrohalogenation reaction and that contains haloalkene, haloalkane, and/or haloalkyne impurities.
Provided are: a method of purifying a fluoroolefin having a structure of ═CF2 or ═CHF, comprising bringing a fluoroolefin having a structure of ═CF2 or ═CHF that has been obtained by a dehydrohalogenation reaction and that contains at least one of haloalkane, haloalkene, and/or haloalkyne impurities into contact with a solid adsorbent to remove the impurities through adsorption; a high-purity fluoroolefin; and a production method therefor.
An object is to provide a method of producing a carboxylic acid fluoride at an increased product yield in a reaction system without forming HCl as a by-product, in other words, without forming a complex between HCl and a carboxylic acid fluoride as a product. Another object is to provide a method of producing a carboxylic acid fluoride without the necessity of using a photoreaction apparatus or a specific hydrogen fluoride adduct and hence without problems of complicating the process.
An object is to provide a method of producing a carboxylic acid fluoride at an increased product yield in a reaction system without forming HCl as a by-product, in other words, without forming a complex between HCl and a carboxylic acid fluoride as a product. Another object is to provide a method of producing a carboxylic acid fluoride without the necessity of using a photoreaction apparatus or a specific hydrogen fluoride adduct and hence without problems of complicating the process.
Provided is a method of producing a carboxylic acid fluoride, comprising reacting a carboxylic acid chloride with a metal fluoride. In this production method, the carboxylic acid is preferably a carboxylic acid having a carbon number of 1 to 7, the carboxylic acid is preferably a carboxylic acid substituted with fluorine, or the carboxylic acid is preferably trifluoroacetic acid.
C07C 51/363 - Preparation of carboxylic acids or their salts, halides, or anhydrides by reactions not involving formation of carboxyl groups by introduction of halogenPreparation of carboxylic acids or their salts, halides, or anhydrides by reactions not involving formation of carboxyl groups by substitution of halogen atoms by other halogen atoms
29.
Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same
A method for recovering lithium from a material that contains fluorine and lithium, wherein: the material is mixed with an aqueous sulfuric acid solution or water, thereby obtaining a mixed solution in which fluorine and lithium in the material have been dissolved; and a purified solution, in which lithium is dissolved, is obtained by means of solid-liquid separation after forming a sediment that contains fluorine and calcium by mixing the mixed solution with a poorly soluble or slightly soluble calcium-containing alkaline agent. It is preferable that, when the mixed solution is obtained, the material that contains fluorine and lithium is mixed with an aqueous sulfuric acid solution or water, and heated at a temperature within the temperature range of from 60°C to 90°C.
A method for recovering lithium, wherein after obtaining a molten metal that contains a valuable metal and a molten slag that contains at least aluminum and lithium by melting a lithium ion secondary battery to be discarded, lithium is recovered from the slag that contains at least aluminum and lithium, said slag having been separated from the molten metal that contains a valuable metal. With respect to this method for recovering lithium, the melting conditions of the lithium ion secondary battery are adjusted so that the mass ratio of aluminum to lithium contained in the slag, namely the value of aluminum/lithium is 6 or less; a leachate, into which lithium contained in the slag has leached, is obtained by bringing the slag and an aqueous liquid into contact with each other; and a purified solution, in which lithium is dissolved, is obtained by means of solid-liquid separation by bringing the leachate and a basic substance into contact with each other, thereby having unwanted metals contained in the leachate precipitate in the form of a poorly soluble substance.
A method for recovering lithium from a material that contains fluorine and lithium, wherein: the material is mixed with an aqueous sulfuric acid solution or water, thereby obtaining a mixed solution in which fluorine and lithium in the material have been dissolved; and a purified solution, in which lithium is dissolved, is obtained by means of solid-liquid separation after forming a sediment that contains fluorine and calcium by mixing the mixed solution with a poorly soluble or slightly soluble calcium-containing alkaline agent. It is preferable that, when the mixed solution is obtained, the material that contains fluorine and lithium is mixed with an aqueous sulfuric acid solution or water, and heated at a temperature within the temperature range of from 60°C to 90°C.
Provided is a tank container capable of accommodating and transporting powder comprising hazardous material powder, etc., while preventing the powder from coming into contact with moisture in the air or from rising to or above a predetermined temperature, and capable of easily discharging the powder. Also provided is a method for manufacturing the tank container. The present invention is equipped with: an airtight cylindrical tank body that accommodates powder inside and is closed at both ends along the longitudinal direction; a plurality of accommodation and discharge portions that are arranged adjacent to each other along the longitudinal direction in the lower part of the tank body, and have base ends airtightly bonded to the inner wall of the tank body and to the adjacent parts, and leading ends formed in the shape of inverted pyramids in such a manner as to project outward from openings that are formed on the outer peripheral surface of the tank body; a heat insulating portion that is disposed on the outer peripheral surface of the tank body; and a container frame portion to which the tank body is fixed.
A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf—COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or —COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).
The purpose of the present invention is to provide a fluorine-containing copolymer composition that is stable over a long period of time, and a fluororesin coating or varnish in which said composition is used. Provided are: a composition containing a solvent, an amino compound, and a fluorine-containing copolymer synthesized by copolymerizing, by means of a solution polymerization method, 0.001-50 mol% of a specified ethylene-based unsaturated organic silicon compound polymerization unit with 5-85 mol% of a fluoroolefin polymerization unit; a fluororesin coating or varnish in which said composition is used; and a production method for the fluorine-containing copolymer composition.
C08L 27/12 - Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogenCompositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
C09D 127/12 - Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogenCoating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
C09D 143/04 - Homopolymers or copolymers of monomers containing silicon
Provided is a method for stably providing a high purity R-COF product, the method configured so that a reduction in R-COF yield caused by contamination by impurities is prevented. According to the present invention, provided are: a method for purifying a carboxylic acid fluoride, the method including a step for bringing a hydrogen halide-containing carboxylic acid fluoride into contact with a metal fluoride so as to remove the hydrogen halide; a method for producing a high purity carboxylic acid fluoride, the method including a step for bringing a hydrogen halide-containing carboxylic acid fluoride into contact with a metal fluoride; a high-purity carboxylic acid fluoride obtained using this method; and a method for using a metal fluoride as a hydrogen halide adsorbent in a method for removing a hydrogen halide from a hydrogen halide-containing carboxylic acid fluoride.
The present invention is a coated zirconia microparticle comprising a zirconia microparticle and a coating layer that coats the surface of the microparticle, wherein: the coating layer contains one or more metal elements selected from Mg, Ca, Al and a rare earth element; the average particle diameter is 3 to 100 nm; and the specific surface area is 20 to 500 m2/g.
Provided is a novel compound that is expected to be used as a solvent, a cleaning agent, a blowing agent, an intermediate for a functional material, and so forth, as well as a production method therefor and uses thereof
As the novel compound, 1,2-dichoro-1-(2,2,2-trifluoroethoxy)ethylene is provided. This compound can be produced, for example, by allowing an addition reaction between 2,2,2-trifluoroethanol and trichloroethylene in the presence of a base.
C07C 41/09 - Preparation of ethers by dehydration of compounds containing hydroxy groups
C08J 9/14 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent organic
42.
Production method and production apparatus for molybdenum hexafluoride
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.
2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
B08B 5/00 - Cleaning by methods involving the use of air flow or gas flow
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
B08B 7/04 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
2222 or =CHF structure and containing at least one type of impurity from among haloalkanes and/or haloalkenes and/or haloalkynes obtained by a dehydrohalogenation reaction, and adsorption-removing the impurities; a high-purity fluoroolefin; and a manufacturing method therefor.
B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
C09D 127/12 - Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogenCoating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
C09D 143/04 - Homopolymers or copolymers of monomers containing silicon
C09D 169/00 - Coating compositions based on polycarbonatesCoating compositions based on derivatives of polycarbonates
C09D 201/04 - Coating compositions based on unspecified macromolecular compounds characterised by the presence of specified groups containing halogen atoms
The present invention aims to provide a carboxylic acid fluoride production method having improved product yield, without creating an HCl by-product in the reaction system, i.e., without forming a complex with carboxylic acid fluoride having HCl as the product thereof. The present invention also aims to provide a production method for carboxylic acid fluoride whereby the use of a photoreaction device or specific hydrogen fluoride adduct is not required and the issue of complication of the work process does not arise. Provided is a carboxylic acid fluoride production method that includes a step in which carboxylic acid chloride and a metal fluoride are reacted. In this production method, the carboxylic acid is ideally a C1–7 carboxylic acid, the carboxylic acid is ideally a fluorine-substituted carboxylic acid, and the carboxylic acid is ideally a trifluoro acetic acid.
9 is each independently hydrogen, fluorine, or chlorine; X is bromine or iodine] to a coupling reaction in the presence of a zero-valent metal and a metal salt.
C07C 17/266 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions of hydrocarbons and halogenated hydrocarbons
C07C 17/269 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions of only halogenated hydrocarbons
C07C 17/275 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by addition reactions of hydrocarbons and halogenated hydrocarbons
C07C 17/278 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by addition reactions of only halogenated hydrocarbons
C07C 17/281 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by addition reactions of only halogenated hydrocarbons of only one compound
C07C 17/263 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions
C07C 17/26 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton
C07C 17/272 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by addition reactions
48.
Method of producing fluorine-containing sulfide compounds
C07C 319/20 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides by reactions not involving the formation of sulfide groups
C07C 323/03 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and halogen atoms, or nitro or nitroso groups bound to the same carbon skeleton having sulfur atoms of thio groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being acyclic and saturated
−1 in wavenumber, and the concentration of the fluorine-based gas is quantified based on an amount of absorption of light having a predetermined wavenumber by the sample and a calibration curve.
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
50.
NON-AQUEOUS ELECTROLYTE SOLUTION AND POWER STORAGE DEVICE USING SAME
H01M 10/0567 - Liquid materials characterised by the additives
H01G 11/64 - Liquid electrolytes characterised by additives
H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
An electrolytic cell has a partition that covers an upper region of one electrode of an anode and a cathode in order to separate a gas generated from the anode and a gas generated from the cathode from each other. The partition has wall surfaces that are each opposite a surface of the electrode. The wall surfaces have, in lower end-side regions thereof, ribs extending in a direction that has a lateral direction component. The ribs and the partition are made of a fluororesin and are integrally formed.
Disclosed is a nonaqueous electrolyte solution containing a lithium electrolyte, methyl 3,3,3-trifluoropropionate, and a phosphazene compound. Preferably, the phosphazene compound is a cyclic phosphazene compound represented by the disclosed general formula (I).
Provided is a novel etching gas composition including a sulfur-containing unsaturated compound, which is useful for etching a silicon-based film laminated structure. The dry etching gas composition includes a sulfur-containing fluorocarbon compound having an unsaturated bond and represented by a general formula (1): CxFySz (where x, y and z are 2 ≤ x ≤ 5, y ≤ 2x, 1 ≤ z ≤ 2).
22 with respect to a low dielectric constant material (Low-k material (SiON, SiCN, SiOCN, SiOC)). This dry etching gas composition contains a saturated and cyclic sulfur-containing fluorocarbon compound represented by general formula (1): CxFySz (in the formula, x, y, and z are 2 ≤ x ≤ 5, y ≤ 2x, 1 ≤ z ≤ 2).
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 27/11582 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H01L 29/788 - Field-effect transistors with field effect produced by an insulated gate with floating gate
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
Disclosed is a method for producing phosphorus pentafluoride, including mixing and reacting phosphorus trichloride and chlorine with a large excess of anhydrous hydrogen fluoride liquid, thereby producing phosphorus pentafluoride, wherein heat of reaction generated through the production of phosphorus pentafluoride is removed with latent heat of evaporation of hydrogen fluoride. It is preferable that the anhydrous hydrogen fluoride liquid is circulated, and, in this state, phosphorus trichloride and chlorine are mixed with the anhydrous hydrogen fluoride liquid. Furthermore, it is also preferable that the anhydrous hydrogen fluoride liquid is circulated along a circulation path, or that the anhydrous hydrogen fluoride liquid is circulated through stirring in a reaction vessel.
In a method for gas-flow carrying a solid particle, the solid particle includes a solid substance generating a dissociation equilibrium reaction that dissociates at least one type of gas component, and the solid particle is carried by a gas flow containing the gas component. The average particle diameter of the solid particle is preferably 0.1-1.0 mm. The solid particle is preferably carried by the gas flow in the state of a suspended flow, a fluidized flow, or a plug flow. The solid particle preferably includes a solid substance to generate a dissociation equilibrium reaction that dissociates at least one gas component and at least one solid component, and the solid particle is preferably carried by the gas flow in a carrying pipe and the solid particle or the solid component that has adhered to the interior surface of the carrying pipe is removed by the gas flow.
B65G 53/16 - Gas pressure systems operating with fluidisation of the materials
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
B01J 8/18 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles
59.
PLASMA ETCHING METHOD USING GAS MOLECULE CONTAINING SULFUR ATOM
22121xyz2abc22 and SiN or a composite material containing the material, a protection film which has a reduced fluorine atom content compared with the case where a conventional hydrofluorocarbon gas is used and which contains a sulfur atom can be deposited. Therefoe, it becomes possible, for example, to improve the selectivity for a mask material or other materials that are not to be etched, and to reduce the damage to a side wall, and to prevent the etching in a transverse direction.
222) gas inlet which is provided on the upstream side of the reactor, and a reaction product gas outlet which is provided on the downstream side of the reactor, the method being characterized in that the fixed bed for placement of metallic molybdenum is tilted.
nn-A3-S-A4mm (wherein A3and A4independently represent a hydrocarbon group which contains 1 to 3 carbon atoms and may be substituted; n and m respectively represent the number of fluorine atoms bonded to A3and the number of fluorine atoms bonded to A4nn-A1-S-A2mm (wherein A1and A2independently represent a hydrocarbon group which has 1 to 3 carbon atoms and may be substituted; n and m respectively represent the number of chlorine atoms bonded to A1and the number of chlorine atoms bonded to A2; and the requirement represented by the formula: n+m = 1 to 13 is satisfied) with a fluorinating agent.
C07C 319/20 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides by reactions not involving the formation of sulfide groups
C07C 323/03 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and halogen atoms, or nitro or nitroso groups bound to the same carbon skeleton having sulfur atoms of thio groups bound to acyclic carbon atoms of the carbon skeleton the carbon skeleton being acyclic and saturated
01 - Chemical and biological materials for industrial, scientific and agricultural use
02 - Paints, varnishes, lacquers
Goods & Services
Chemicals for use in industry; fluorspar compounds;
solidified, liquefied, and compressed gases for industrial
purposes, excluding fuels, for use in manufacturing of
semiconductors, liquid crystals, optical fibers, and high
capacity transformers; caustic soda (sodium hydroxide);
sodium hypochlorite; aluminium chloride; hydrochloric acid;
trichloroethylene; perchloroethylene; vinylidene chloride;
alcohol for industrial purposes; caustics for industrial
purposes; chemical agents for processing insulating resins;
chemical materials for forming thin films on semiconductor
wafers for semiconductor manufacturing; surface-active
chemical agents; electrolytic solution for batteries;
electrolytes for batteries; bleaching preparations
[decolorants] for industrial purposes; chemical coatings
used in industry (excluding paints); fluorine resin coatings
used in industry (excluding paints); detergents for use in
manufacturing processes; spinel [oxide mineral]. Pigments; coating compositions in the nature of paint;
fluorine resin coatings in the nature of paint.
The present invention provides a method and a device for measuring and analyzing impurities or hydrogen fluoride in a corrosive gas with high sensitivity without requiring a pretreatment. The method and device measure a fluorine-based gas in a sample containing a corrosive gas by means of a Fourier transform infrared spectrophotometer provided with: a detector having an InGaAs detection element; and a single pass gas cell having an optical path length of 0.01-2 m, wherein a cell window is formed of a corrosion resistant material, the measurement wavenumber range is 3800-14300 cm-1, and the fluorine-based gas concentration is quantified from a preset calibration curve and the amount of light having a predetermined wavenumber absorbed by the sample.
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
The purpose of the present invention is to provide a method for industrially producing a compound having a polyene skeleton containing hydrogen and fluorine and/or chlorine simply and at low cost. A method for producing a halogenated diene represented by formula (1): A1A2C=CA3–CA4=CA5A6[In the formula: A1, A2, A5and A6independently represent hydrogen, fluorine or chlorine, a C1-3 (perfluoro)alkyl group or a (perfluoro)alkenyl group; A3and A4independently represent hydrogen, fluorine or chlorine; at least one of A1to A6represents hydrogen; and at least one of A1to A6represents fluorine or chlorine.] Furthermore, said method includes a step in which the same or different halogenated olefins undergo a coupling reaction in the presence of a zerovalent metal and metal salt, said halogenated olefins being represented by formula (2): A7A8C=CA9X [In the formula: A7and A8independently represent hydrogen, fluorine or chlorine, a C1-3 (perfluoro)alkyl group, or a (perfluoro)alkenyl group; A9 independently represents hydrogen, fluorine or chlorine; and X represents bromine or iodine.]
C07C 17/269 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions of only halogenated hydrocarbons
The present invention provides: a novel compound which is expected to be used as an intermediate for solvents, cleaning agents, foaming agents, functional materials, and the like; a method for producing this novel compound; and a use of this novel compound. Provided as this novel compound is a chlorinated bis(3, 3, 3-trifluoro-1-propenyl) ether. This novel compound includes a (1-chloro-3, 3, 3-trifluoro-1-propenyl) (3, 3, 3-trifluoro-1-propenyl) ether and a bis(1-chloro-3, 3, 3-trifluoro-1-propenyl) ether. The bis(1-chloro-3, 3, 3-trifluoro-1-propenyl) ether is able to be produced, for example, by subjecting a bis(1, 1-dichloro-3, 3, 3-trifluoropropyl) ether to a dehydrochlorination reaction in a liquid phase in the presence of a base.
NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY (Japan)
Inventor
Amii, Hideki
Komoda, Kazuki
Kobayashi, Masafumi
Nakamura, Yutaka
Obinata, Ryusuke
Harada, Akinori
Abstract
A simple production process is provided of a perfluoroalkyl compound that uses monohydroperfluoroalkane as a starting material, the perfluoroalkyl compound being an important intermediate of organic electronic materials, medicine, agricultural chemicals, functional polymer materials and the like. With monohydroperfluoroalkane is reacted a base and then a carbonyl compound to produce an alcohol having a perfluoroalkyl group. For example, potassium hydroxide is made to interact with trifluoromethane, and a reaction with a carbonyl compound is induced to produce an alcohol having a trifluoromethyl group.
C07C 29/38 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring increasing the number of carbon atoms by reactions with formation of hydroxy groups, which may occur via intermediates being derivatives of hydroxy groups, e.g. O-metal by reaction with aldehydes or ketones
C07C 31/125 - Monohydroxylic acyclic alcohols containing five to twenty-two carbon atoms
C07C 33/46 - Halogenated unsaturated alcohols containing only six-membered aromatic rings as cyclic part
C07C 43/23 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
C07C 209/68 - Preparation of compounds containing amino groups bound to a carbon skeleton from amines, by reactions not involving amino groups, e.g. reduction of unsaturated amines, aromatisation, or substitution of the carbon skeleton
C07C 231/12 - Preparation of carboxylic acid amides by reactions not involving the formation of carboxamide groups
C07C 233/15 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by halogen atoms or by nitro or nitroso groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring
C07C 41/30 - Preparation of ethers by reactions not forming ether-oxygen bonds by increasing the number of carbon atoms, e.g. by oligomerisation
C07C 209/78 - Preparation of compounds containing amino groups bound to a carbon skeleton from amines, by reactions not involving amino groups, e.g. reduction of unsaturated amines, aromatisation, or substitution of the carbon skeleton from carbonyl compounds, e.g. from formaldehyde, and amines having amino groups bound to carbon atoms of six-membered aromatic rings, with formation of methylene-diarylamines
01 - Chemical and biological materials for industrial, scientific and agricultural use
02 - Paints, varnishes, lacquers
Goods & Services
Chemicals for use in industry; fluorspar compounds; solidified, liquefied, and compressed gases for industrial purposes, excluding fuels, for use in manufacturing of semiconductors, liquid crystals, optical fibers, and high capacity transformers; caustic soda; sodium hydroxide; sodium hypochlorite; aluminium chloride; hydrochloric acid; trichloroethylene; perchloroethylene; vinylidene chloride; alcohol for industrial purposes; caustics for industrial purposes; chemical agents for processing insulating resins; chemical materials for forming thin films on semiconductor wafers for semiconductor manufacturing; surface-active chemical agents; electrolytic solution for batteries; electrolytes for batteries; bleaching preparations for industrial purposes; chemical coatings used in industry excluding paints; fluorine resin coatings used in industry excluding paints; detergents for use in manufacturing processes; oxides; spinel structure compounds, namely, spinel ferrites and synthetic magnetite Pigments; coating compositions in the nature of paint; fluorine resin coatings in the nature of paint
68.
1, 2-DICHLORO-1-(2, 2, 2-TRIFLUOROETHOXY)ETHYLENE, METHOD FOR PRODUCING SAME, AND USE OF SAME
The present invention provides: a novel compound which is expected to be used as a solvent, a cleaning agent, a foaming agent, an intermediate for functional materials, and the like; a method for producing this novel compound; and a use of this novel compound. The present invention provides, as this novel compound, 1, 2-dichloro-1-(2, 2, 2-trifluoroethoxy)ethylene. This compound is able to be produced, for example, by subjecting 2, 2, 2-trifluoroethanol and trichloroethylene to an addition reaction in the presence of a base.
An electrolytic bath (1) having a partition (10) for covering the upper region of one electrode among the negative electrode (11) and the positive electrode (12) in order to separate a gas produced by the positive electrode (11) and a gas produced by the negative electrode (12) from one another, wherein: the partition (10) has wall surfaces (10a, 10b) which each face one surface of the electrode (11); the wall surfaces (10a, 10b) have ribs (50, 51) extending in a direction having a horizontal component in the bottom end-side region thereof; and the ribs (50, 51) and the partition (10) comprise a fluorine resin and are integrally formed with one another.
The present invention provides a nonaqueous electrolyte solution which contains a lithium electrolyte, 3, 3, 3-trifluoropropionic acid methyl and a phosphazene compound. It is preferable that the phosphazene compound is a cyclic phosphazene compound represented by general formula (I). (In the formula, each R independently represents a halogen atom or a group that is selected from among an alkoxy group, an aryloxy group, an alkyl group, an aryl group, an amino group, an alkylthio group and an arylthio group; and p represents 3 or 4.) The present invention also provides a nonaqueous electrolyte battery which is provided with a positive electrode and a negative electrode, while containing the above-described nonaqueous electrolyte solution.
This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for removing unwanted film, such as a Si-containing deposit, attached to the interior of the processing room or processing vessel after a processing operation without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
72.
Material, storage container using the material, valve attached to the storage container, method of storing ClF and method of using ClF storage container
F17C 1/10 - Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge with provision for protection against corrosion, e.g. due to gaseous acid
C23C 8/08 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
F16K 1/30 - Lift valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces specially adapted for pressure containers
F16K 1/04 - Lift valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with screw-spindle with a cut-off member rigid with the spindle, e.g. main valves
F16K 25/00 - Details relating to contact between valve members and seats
C23C 8/06 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
Provided is a method for atomic layer etching a silicon oxide film or silicon nitride film. The atomic layer etching is performed by repeating the three steps of: a hydrogenation step (1) for irradiating a silicon oxide or silicon nitride film with a H-containing plasma to hydrogenate the surface thereof; an acid halide adsorption step (2) in which an acid halide represented by the formula of Rf-COX (in the formula, Rf is -COX or a substituent consisting of H, F, C and F, or C, H, and F, and each X is independently a halogen atom selected from among F, Cl, Br, and I) is exposed and reacted with the hydrogenated surface, and Rf-COX is chemisorbed on the surface; and an etching step (3) for irradiating the acid halide-adsorbed silicon oxide or silicon nitride film with a noble gas (at least one among He, Ar, Ne, Kr, and Xe)-containing plasma to induce a chemical reaction on the surface and etch a single atomic layer.
01 - Chemical and biological materials for industrial, scientific and agricultural use
02 - Paints, varnishes, lacquers
Goods & Services
Chemicals for use in industry; fluorspar compounds; industrial gases for use in manufacturing of semiconductor, liquid crystals, optical fibers, and high capacity transformers; Caustic soda (sodium hydroxide); sodium hypochlorite; aluminium chloride; hydrochloric acid; trichloroethylene; perchloroethylene; vinylidene chloride; Alcohol for industrial purposes; caustics for industrial purposes; chemical agents for processing insulating resins; chemical materials for forming thin films on semiconductor wafers for semiconductor manufacturing; surface-active chemical agents; electrolytic solution for batteries; electrolytes for batteries; bleaching preparations (decolorants) for industrial purposes; chemical coatings used in industry excluding paints, namely, chemical coatings used in the manufacture of printed circuit boards and surface coated magnetic particles; fluorine resin coatings used in industry excluding paints, namely, chemical agents made from fluorine resin for coating of surfaces of subject materials; detergents for use in manufacturing processes; spinel structure compounds, namely, spinel ferrites and synthetic magnetite Pigments; Coating compositions in the nature of paint; fluorine resins in the nature of paint
75.
ELECTRODE AND PRODUCTION METHOD THEREFOR, AND PRODUCTION METHOD FOR REGENERATED ELECTRODE
This electrode for electrolytic fluorination according to the present invention contains nickel as a base material, and has a fluorine content of less than 1,000 ppm. The electrode preferably has, in at least a surface portion thereof, a nickel content of 99 mass% or more, an iron content of 400 ppm or less, a copper content of 250 ppm or less, and a manganese content of 1000 ppm or less. The production method for the electrode according to the present invention comprises disposing a nickel base material electrode as a cathode in a nickel plating bath, and applying nickel plating to the nickel base material electrode by an electrolytic nickel plating method, wherein (1) a nickel component which has precipitated in a molten salt or which has deposited on a cathode in a nitrogen trifluoride production step performed by molten salt electrolysis using a nickel base material anode, or said nickel base material anode, is used an anode, or (2) said nickel base material anode is used as a cathode.
NATIONAL UNIVERSITY CORPORATION, KYOTO INSTITUTE OF TECHNOLOGY (Japan)
Inventor
Yoshiyama Kazuhide
Naka Kensuke
Matsukawa Kimihiro
Abstract
The present invention is a thermally conductive particle-filled fiber which contains a resin and thermally conductive particles, and wherein: at least some of the thermally conductive particles are present within the fiber; the thermally conductive particles have an average particle diameter of 10-1,000 nm; and the average fiber diameter is 50-10,000 nm.
D01F 6/44 - Monocomponent man-made filaments or the like of synthetic polymersManufacture thereof from mixtures of polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds as major constituent with other polymers or low-molecular-weight compounds
01 - Chemical and biological materials for industrial, scientific and agricultural use
02 - Paints, varnishes, lacquers
Goods & Services
Chemicals for use in industry; fluorspar compounds; industrial gases; Caustic soda (sodium hydroxide); sodium hypochlorite; aluminium chloride; hydrochloric acid; trichloroethylene; perchloroethylene; vinylidene chloride; Alcohol for industrial purposes; caustics for industrial purposes; chemical agents for processing insulating resins; chemical materials for forming thin films on semiconductor wafers for semiconductor manufacturing; surface-active chemical agents; electrolytic solution for batteries; electrolytes for batteries; bleaching preparations [decolorants] for industrial purposes; chemical coatings used in industry (excluding paints); fluorine resin coatings used in industry (excluding paints); detergents for use in manufacturing processes; spinel [oxide mineral]. Pigments; Coating compositions in the nature of paint; fluorine resins in the nature of paint.
A chlorine fluoride feeding device and feeding process are provided that can stably generate industrially applicable chlorine fluoride (ClF), control flow rate, and provide continual feed.
The feeding process of chlorine fluoride of this invention is a feeding process to feed chlorine fluoride generated by loading a gas that contains fluorine atoms and a gas that contains chlorine atoms to a flow-type heat reactor or a plasma reactor, and it can stably generate and safely feed chlorine fluoride for a long time by reacting chlorine fluoride that is difficult to pack at a high pressure, such that an amount that can be packed in a gas container such as a gas cylinder is limited, with two or more types of gas materials that can be packed safely in a gas container by liquefaction, or with such gas material and a solid material.
A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.
The purpose of the present invention is to provide: a coated inorganic fine particle suitable for use as a transparent nanocomposite material in optical members, electronic components, coating materials, dental materials, and the like; and a method for producing the coated inorganic fine particle. Provided is a coated inorganic fine particle which has a coating layer and is obtained by reacting at least one among compounds represented by formulae (A-1), (A-2), (B-1), (B-2), (C), (D-1), and (D-2), and salts thereof on the surface of an inorganic fine particle, wherein the inorganic fine particle has an average particle size of at least 1 nm and less than 100 nm, a specific surface area of at least 1 m2/g and less than 3,000 m2/g, and a volatile organic compound content of less than 100 ppm. According to the present invention, a transparent nanocomposite material which is excellent for mass production, and in which inorganic fine particles are uniformly dispersed without aggregation even at high concentrations, can be obtained.
NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY (Japan)
Inventor
Amii, Hideki
Shimoda, Mitsuharu
Iketani, Yoshihiko
Kimura, Ryo
Abstract
The purpose of the present invention is to provide a method for conveniently and industrially producing at low cost, a compound having a polyene skeleton and containing hydrogen and fluorine and/or chlorine. Provided is a method for producing a halogenated diene represented by formula (1), A1A2C=CA3-CA4=CA5A6 [in the formula, A1, A2, A5, and A6 independently represent hydrogen, fluorine or chlorine, a C1-3 (perfluoro) alkyl group or (perfluoro) alkenyl group, A3 and A4 independently represent hydrogen, fluorine or chlorine, at least one among A1-A6 represents hydrogen, and at least one among A1-A6 represents fluorine or chlorine], the method comprising a step for subjecting identical or different halogenated olefins represented by formula (2), A7A8C=CA9X [in the formula, A7 and A8 independently represent hydrogen, fluorine or chlorine, a C1-3 (perfluoro) alkyl group or (perfluoro) alkenyl group, A9 independently represents hydrogen, fluorine or chlorine, and X represents bromine or iodine], to a coupling reaction in the presence of a zero-valent metal.
C07C 17/269 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions of only halogenated hydrocarbons
The present invention is a fluorine-containing copolymer containing:(A) 15-85 mol% of a fluoroolefin in the constituent monomers; (B) 0.001-10 mol% of a specific organosilicon compound in the constituent monomers; (C) of the constituent monomers, 5-40 mol% of one or more monomers selected from monomers that do not have a curing reactive group, have a C1-20 aliphatic saturated hydrocarbon group, and have a glass transition temperature of a homopolymer of the monomer of less than 0°C, the monomers being selected from vinyl ethers, vinyl esters, methacrylic acid esters, and acrylic acid esters; and (D) of the constituent monomers, 1-25 mol% of one or more monomers selected from monomers having a curing reactive group, the monomers being selected from vinyl ethers, vinyl esters, allyl ethers, methacrylic acid esters, and acrylic acid esters, wherein the fluorine-containing monomer has a glass transition temperature of -30°C to 20°C, a number average molecular weight of 2.0 x 104 to 7.0 x 104, and a weight average molecular weight of 1.0 x 105 to 3.0 x 105.
C08F 216/12 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical by an ether radical
C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
C08F 230/08 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
C09D 127/12 - Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogenCoating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
83.
DRY ETCHING GAS COMPOSITION AND DRY ETCHING METHOD
There is used a dry etching gas composition containing a saturated or unsaturated hydrofluorocarbon compound represented by general formula (1): CxHyFz (where x, y, and z are integers satisfying 2 ≤ x ≤ 4, y + z ≤ 2x + 2, and 0.5 < z/y < 2) (excluding 1,1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane). Using the etching gas composition containing this hydrofluorocarbon makes it possible to selectively etch (b1) a silicon-based film containing nitrogen, with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.
A method for selectively etching a film comprising Si, such as polycrystalline silicon (poly-Si), single-crystalline silicon (single-crystalline Si), or amorphous silicon (a-Si) as a principal component. Also provided is a cleaning method for removing a deposit or an attachment comprising Si as a major component that has become deposited or attached in a sample chamber of a device for performing film formation, such as a chemical vapor deposition (CVD) device, without damaging the inside of the device. A monofluoro interhalogen gas (XF, where X is one of Cl, Br, and I) and nitrogen monoxide (NO) are simultaneously introduced into a device for performing etching or film formation and excited by heat, whereby it becomes possible to reduce the etch rate for SiN or SiO2 and to selectively and rapidly etch a film comprising Si, such as poly-Si, single-crystalline Si, or a-Si, as a major component. It is also possible to perform cleaning by removing a deposit or an attachment comprising Si as a major component that has become deposited or attached in a device for performing film formation, such as a CVD device, without damaging the inside of the device.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
The present invention is a coating composition which contains (A) a fluorine-containing copolymer, (B) a solvent and (C) fine resin particles which satisfy the conditions 1 to 5 described below. Condition 1: The fine resin particles have an average particle diameter of 0.1-50 μm. Condition 2: The refractive index of the fine resin particles at 20°C is 0.8 to 1.2 times the refractive index of a film, which is formed from the fluorine-containing copolymer (A), at 20°C. Condition 3: The fine resin particles have a 10% compressive strength of 40 MPa or less. Condition 4: The fine resin particles have a compressibility of 20% or more. Condition 5: The fine resin particles do not undergo brittle fracture under a load of 0.1 mN.
C09D 127/12 - Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogenCoating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
In this method for producing phosphorus pentafluoride, phosphorus trichloride and chlorine are mixed with and reacted with an anhydrous hydrogen fluoride fluid in large excess thereof to produce phosphorus pentafluoride, and the heat of reaction generated from the generation of the phosphorus pentafluoride is eliminated by evaporative latent heat of hydrogen fluoride. It is preferable that the anhydrous hydrogen fluoride fluid is circulated and under that condition, phosphorus trichloride and chlorine are mixed with the anhydrous hydrogen fluoride fluid. It is also preferable that the anhydrous hydrogen fluoride fluid is circulated in a circulation pathway, or the anhydrous hydrogen fluoride fluid is stirred in a reaction vessel for circulation.
Provided is a method for gas-flow carrying a solid particle, wherein the solid particle comprises a solid substance which can generate a dissociation equilibrium reaction that dissociates at least one type of gas component, and the solid particle is carried by a gas flow containing the gas component. The average particle diameter of the solid particle is preferably 0.1 to 1.0 mm. The solid particle is preferably carried by the gas flow in the state of a suspended flow, a fluidized flow, or a plug flow. The solid particle preferably comprises a solid substance which can generate a dissociation equilibrium reaction that dissociates at least one type of gas component and at least one type of solid component, and the solid particle is preferably carried by the gas flow in a carrying pipe and the solid particle or the solid component that has adhered to the interior surface of the carrying pipe is removed by the gas flow.
Disclosed is a method for purifying a difluorophosphate, the method including mixing a difluorophosphate containing an impurity with at least one treatment agent selected from the group consisting of carbonates, hydroxides, and halides of alkali metals or alkali earth metals and amines to isolate the impurity. It is preferable that the method further include filtering off, by filtration, a salt or a complex that has been formed by allowing the impurity to be mixed with the treatment agent. Preferably, a carbonate, a hydroxide, or a halide of an alkali metal is used as the treatment agent, and more preferably a carbonate, a hydroxide, or a halide of lithium is used as the treatment agent.
A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.
The present invention relates to a method for producing a fluorinated compound represented by formula (2): R2-F (where R2 represents a group obtained by removing a hydroxy group from a hydroxy compound having six or more carbon atoms), the method being characterized by fluorinating a hydroxy compound having six or more carbon atoms by a fluorinating agent represented by formula (1): R1SO2F (where R1 represents a methyl group, an ethyl group, or an aromatic group) in the presence of a base selected from the group consisting of amidine base and phosphazene base.
C07C 22/00 - Cyclic compounds containing halogen atoms bound to an acyclic carbon atom
C07C 22/08 - Cyclic compounds containing halogen atoms bound to an acyclic carbon atom having unsaturation in the rings containing six-membered aromatic rings containing fluorine
NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY (Japan)
KANTO DENKA KOGYO CO., LTD. (Japan)
Inventor
Habuka, Hitoshi
Takahashi, Yoshinao
Fukae, Katsuya
Abstract
Provided is a method for effectively removing fluorine atoms remaining after cleaning a semiconductor production chamber with chlorine trifluoride. The interior of a semiconductor provided chamber which has been used to produce semiconductors is exposed to chlorine trifluoride, and after removing matter to be removed remaining in the chamber, the interior of the chamber is heat-treated with at least one gas selected from the group consisting of nitrogen, argon, helium and hydrogen. It is preferable that the interior of the chamber is exposed to chlorine trifluoride while measuring the temperature inside the chamber, and that the supply of chlorine trifluoride to the interior of the chamber is stopped if the temperature inside the chamber drops to a preset temperature.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY (Japan)
Inventor
Amii, Hideki
Komoda, Kazuki
Kobayashi, Masafumi
Nakamura, Yutaka
Obinata, Ryusuke
Harada, Akinori
Abstract
Provided is a simple method for producing perfluoroalkyl compounds that serve as important intermediates for organic electronic materials, pharmaceuticals, agricultural chemicals, polymer functional materials, etc., the method involving the use of monohydroperfluoroalkanes as a starting material. A base is caused to act on a monohydroperfluoroalkane and a reaction with a carbonyl compound is furthermore carried out, whereby an alcohol having a perfluoroalkyl group is produced. For example, potassium hydroxide is caused to act on trifluoromethane and a reaction with a carbonyl compound is carried out, whereby an alcohol having a trifluoromethyl group is produced.
C07C 29/38 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring increasing the number of carbon atoms by reactions with formation of hydroxy groups, which may occur via intermediates being derivatives of hydroxy groups, e.g. O-metal by reaction with aldehydes or ketones
C07C 31/125 - Monohydroxylic acyclic alcohols containing five to twenty-two carbon atoms
C07C 33/46 - Halogenated unsaturated alcohols containing only six-membered aromatic rings as cyclic part
C07C 43/23 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
C07C 209/68 - Preparation of compounds containing amino groups bound to a carbon skeleton from amines, by reactions not involving amino groups, e.g. reduction of unsaturated amines, aromatisation, or substitution of the carbon skeleton
C07C 231/12 - Preparation of carboxylic acid amides by reactions not involving the formation of carboxamide groups
C07C 233/15 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by halogen atoms or by nitro or nitroso groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring
95.
MATERIAL, STORAGE CONTAINER USING SAID MATERIAL, VALVE INSTALLED ON SAID STORAGE CONTAINER AS WELL AS CIF STORAGE METHOD AND CIF STORAGE CONTAINER USE METHOD
C23C 8/08 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
Provided are a chlorine fluoride supplying device and a chlorine fluoride supplying method which are capable of stably generating chlorine fluoride (ClF) for industrial use, controlling flow rate thereof, and continuously supplying the same. This chlorine fluoride supplying method is a method for supplying chlorine fluoride that is generated by introducing a gas that includes fluorine atoms and a gas that includes chlorine atoms into a flow type heated reactor or a plasma reactor. In this chlorine fluoride supplying method, it is possible to stably generate, as well as safely continue supplying over a long period of time, chlorine fluoride, which due to the difficulties of high pressure filling thereof can only be filled into a gas container such as a cylinder in limited amounts, by reacting two or more types of gas material that can be safely liquefied and filled into a gas container or by reacting similar gas material with a solid material.
The present invention provides a cleaning method which uses a cleaning gas composition for semiconductor production apparatuses, said cleaning gas composition containing, as a main component, a monofluorohalogen compound represented by XF (wherein X represents Cl, Br or I), and provides a method which is capable of removing, with good controllability, an unnecessary film deposited within a processing chamber or a processing container with use of the monofluorohalogen compound without damaging the inside of the processing chamber or the processing container. A cleaning method which is characterized by removing an Si-containing deposit adhering to the inside of a processing chamber or a processing container, which is used for the production of a semiconductor device, after the processing operation by supplying a monofluorohalogen gas represented by XF (wherein X represents Cl, Br or I) into the processing chamber or the processing container. In this cleaning method, the temperature within the processing chamber or the processing container at the time when the monofluorohalogen gas is supplied thereinto is 400°C or higher.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
The purpose of the present invention is to provide a method for easily producing a difluorophosphate using only low-cost starting materials without requiring cumbersome operations. According to the present invention, at least one salt selected from the group consisting of halides, carbonates, borates, phosphates, hydroxides and oxides of an alkali metal, an alkaline earth metal or an onium, at least one phosphorus compound selected from the group consisting of oxychlorides and chlorides of phosphorus, water and hydrogen fluoride are reacted. The above-mentioned purpose is achieved preferably using, as hydrogen fluoride, one substance selected from the group consisting of hydrogen fluoride anhydride, a mixed solution of hydrogen fluoride anhydride and an organic solvent and a mixed gas of hydrogen fluoride anhydride and an inert gas, as a salt used in the reaction, at least one substance selected from the group consisting of halides and carbonates of an alkali metal, and as a phosphorus compound, phosphoryl chloride.
Provided are a nonaqueous electrolyte for secondary batteries containing an electrolyte having high solubility in ethylene carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, ethyl methyl carbonate, or a like solvent and capable of forming a good-quality film on the positive and the negative electrode interface and a nonaqueous secondary battery having the nonaqueous electrolyte. Specifically, an electrolyte for secondary batteries containing a lithium salt as a solute and a nonaqueous solvent is provided, the nonaqueous solvent containing a monofluorophosphoric ester salt having general formula 1 or 2, in which symbols are as defined in the description.
Provided is a method for purifying difluorophosphate which includes a step of mixing difluorophosphate containing impurities with at least one type of processing agent selected from the group consisting of a carbonate, hydroxide, or halogenide of an alkaline metal or an alkaline earth metal, and an amine, and separating the impurities. After mixing the impurities with the processing agent to form a salt or a complex, the salt or the complex is preferably filtered out by filtration. As the processing agent, the carbonate, hydroxide, or halogenide of alkaline metal is preferably used, and a carbonate, hydroxide, or halogenide of lithium is more preferably used.
