A ZrO2 dispersion liquid containing, a ZrO2 particle coated with a silane coupling agent, and a dispersion medium for the ZrO2 particle, wherein a BET specific surface area of the ZrO2 particle coated with the silane coupling agent obtained by removing the dispersion medium is 36% or more of a BET specific surface area of the ZrO2 particle before coating with the silane coupling agent.
To establish an unprecedented novel method for producing D-luciferin and a D-luciferin derivative without using expensive 2-cyano-6-hydroxybenzothiazole that is obtained by a multi-stage production process. In the method for producing D-luciferin and a D-luciferin derivative, the above object is achieved via a novel substituted diaminodithioether represented by the following formula (1):
To establish an unprecedented novel method for producing D-luciferin and a D-luciferin derivative without using expensive 2-cyano-6-hydroxybenzothiazole that is obtained by a multi-stage production process. In the method for producing D-luciferin and a D-luciferin derivative, the above object is achieved via a novel substituted diaminodithioether represented by the following formula (1):
To establish an unprecedented novel method for producing D-luciferin and a D-luciferin derivative without using expensive 2-cyano-6-hydroxybenzothiazole that is obtained by a multi-stage production process. In the method for producing D-luciferin and a D-luciferin derivative, the above object is achieved via a novel substituted diaminodithioether represented by the following formula (1):
wherein X is H, OCH3 or OH; and Y, Z and W are H or monovalent organic groups, which serves as a precursor.
C07C 323/58 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des groupes carboxyle liés au même squelette carboné ayant les atomes de soufre des groupes thio liés à des atomes de carbone acycliques du squelette carboné le squelette carboné étant substitué de plus par des atomes d'azote, ne faisant pas partie de groupes nitro ou nitroso avec des groupes amino liés au squelette carboné
C07C 319/20 - Préparation de thiols, de sulfures, d'hydropolysulfures ou de polysulfures de sulfures par des réactions n'impliquant pas la formation de groupes sulfure
C07D 417/04 - Composés hétérocycliques contenant plusieurs hétérocycles, au moins un cycle comportant des atomes de soufre et d'azote comme uniques hétéro-atomes du cycle, non prévus par le groupe contenant deux hétérocycles liés par une liaison directe de chaînon cyclique à chaînon cyclique
The purpose of the present invention is to provide a fluoroolefin production method, which has a high reaction conversion ratio and selectivity of a target substance, is capable of obtaining the target substance with a high yield, has a low ratio of by-products, does not generate liquid waste, and solves the problems of the prior art. The fluoroolefin production method is characterized in that a fluorinated alkane is subjected to a dehydrofluorination reaction in the presence of activated carbon containing a metal salt.
466) is produced by chlorination and dehydrochlorination from the dimer, and the hexachlorobutadiene is fluorinated to produce chlorofluorobutane (CFB).
C07C 17/281 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions d'addition d'hydrocarbures halogénés uniquement d'un seul composé
Provided is an electrophotographic carrier comprising a resin-coated carrier comprising magnetic core material particles and a coating layer that coats the surfaces of the core material particles with a resin, wherein the coating layer at least includes an acrylic resin A that does not contain a styrene component, an acrylic resin B that contains a styrene component, and a fluororesin, and the ratio of the styrene component contained in all the acrylic resins in the coating layer is less than 45.2 mass %. Also provided is a two-component developer using the same. The ratio of a constituent unit derived from a styrene monomer in the acrylic resin B is preferably 30 mol % to 90 mol % inclusive with respect to all of the constituent units constituting the acrylic resin B.
G03G 9/113 - Développateurs avec des particules de toner caractérisés par les particules porteuses avec application d'un revêtement sur ces particules
G03G 9/107 - Développateurs avec des particules de toner caractérisés par les particules porteuses ayant des composants magnétiques
7.
USE OF 1,1,1,3,5,5,5-HEPTAFLUORO-2-PENTENE IN NONAQUEOUS ELECTROLYTIC SOLUTION, NONAQUEOUS ELECTROLYTIC SOLUTION CONTAINING 1,1,1,3,5,5,5-HEPTAFLUORO-2-PENTENE, AND SECONDARY BATTERY INCLUDING SAID NONAQUEOUS ELECTROLYTIC SOLUTION
Provided are: a new use application of 1,1,1,3,5,5,5-heptafluoro-2-pentene (HFO-1447), especially, a new use application of the HFO-1447 in a nonaqueous electrolytic solution; a nonaqueous electrolytic solution containing HFO-1447; and a secondary battery including said nonaqueous electrolytic solution. Also provided are: a use of 1,1,1,3,5,5,5-heptafluoro-2-pentene in a nonaqueous electrolytic solution; a nonaqueous electrolytic solution containing an electrolyte, which is 1,1,1,3,5,5,5-heptafluoro-2-pentene, and a nonaqueous organic solvent; and a secondary battery including said nonaqueous electrolytic solution.
A purpose of the present invention is to provide a method for producing 1,1,1,3,5,5,5-heptafluoro-2-pentene (HFO-1447) that is highly pure, particularly with a purity of higher than 99%. Another purpose of the present invention is to provide highly pure 1,1,1,3,5,5,5-heptafluoro-2-pentene (HFO-1447) and a use thereof. Provided is a method for producing 1,1,1,3,5,5,5-heptafluoro-2-pentene, said method comprising (a) reacting 3-chloro-hexafluoro-2-pentene with hydrogen fluoride at a temperature of higher than -10°C but not higher than 20°C in the presence of a metal halide catalyst to produce 3-chloro-1,1,1,3,5,5,5-heptafluoropentane, and then (b) subjecting the 3-chloro-1,1,1,3,5,5,5-heptafluoropentane obtained in (a) to a dehydrochlorination reaction in the presence of an activated carbon catalyst to produce 1,1,1,3,5,5,5-heptafluoro-2-pentene.
The purpose of the present invention is to provide a novel method for producing 3-chloro-1,1,1,5,5,5-hexafluoro-2-pentene Provided is a method for producing 3-chloro-1,1,1,5,5,5-hexafluoro-2-pentene, the method including a step for reacting 1,1,1,3,3,5,5,5-octafluoropentane with hydrogen fluoride. Also provided are: a method for producing 3-chloro-1,1,1,5,5,5-hexafluoro-2-pentene, the method including a step for reacting 1,1,3-trichloro-5,5,5-trifluoro-1,3-pentadiene with hydrogen fluoride; and a method for producing 3-chloro-1,1,1,5,5,5-hexafluoro-2-pentene, the method including a step for reacting 1,1,3,5,5,5-hexachloro-1,3-pentadiene with hydrogen fluoride.
Provided are: 1,1,1,5,5,5-hexafluoro-3-(2,2,2-trifluoroethoxy)-2-pentene which is a new compound; and a use application and a production method for the new compound. The present invention provides 1,1,1,5,5,5-hexafluoro-3-(2,2,2-trifluoroethoxy)-2-pentene. This new compound can be produced by, for example, reacting 1,1,1,5,5,5-hexafluoro-3-chloro-2-pentene and 2,2,2-trifluoro ethanol in the presence of a base. Further, the new compound is useful as an additive in a nonaqueous electrolytic solution of a secondary battery.
z is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
12.
METHOD FOR RECOVERING LITHIUM AND METHOD FOR PRODUCING LITHIUM CARBONATE
Disclosed is A method for recovering lithium from slag containing at least aluminum and lithium, the slag being provided by melting a lithium-ion secondary battery to be disposed of to obtain molten metal containing valuable metal and molten slag containing at least aluminum and lithium and separating the slag containing at least aluminum and lithium from the molten metal containing valuable metal. The condition of the melting of the lithium-ion secondary battery is adjusted such that the slag has an aluminum to lithium mass ratio, Al/Lo, of 6 or less. The method includes: contacting the slag with an aqueous liquid to obtain a leachate containing lithium leached from the slag; and contacting the leachate with a basic substance to cause unwanted metal contained in the leachate to precipitate in the form of a slightly soluble substance, followed by solid-liquid separation to obtain a purified solution having lithium dissolved therein.
Provided is a method for recovering lithium from a material containing fluorine and lithium. The method includes: mixing the material with an aqueous sulfuric acid solution or water to prepare a mixed liquid; and mixing the mixed liquid with a slightly or sparingly soluble calcium-containing alkaline agent to form a precipitate containing fluorine and calcium, followed by solid-liquid separation to obtain a purified solution having lithium dissolved therein. In the preparation of the a mixed liquid, the material and the sulfuric acid aqueous solution or water are mixed and heated at 60° to 90° C.
Provided is a novel method for producing a diarylacetylene derivative. An alkyne derivative having aryl substituents at both ends is provided by subjecting a tetrahalogenated ethylene and phenylboronic acid to a cross-coupling reaction and then conducting a treatment with a base.
C07C 5/00 - Préparation d'hydrocarbures à partir d'hydrocarbures contenant le même nombre d'atomes de carbone
C07C 15/54 - Hydrocarbures cycliques ne contenant que des cycles aromatiques à six chaînons en tant que partie cyclique substitués par des radicaux hydrocarbonés non saturés polycycliques non condensés contenant un groupe de formule
C07C 25/24 - Hydrocarbures aromatiques halogénés à chaînes latérales non saturées
C07C 41/18 - Préparation d'éthers par des réactions ne formant pas de liaisons sur l'oxygène de la fonction éther
C07C 43/215 - Éthers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons avec une insaturation autre que celle des cycles aromatiques à six chaînons
C07C 17/25 - Préparation d'hydrocarbures halogénés par élimination d'halogénures d'hydrogène à partir d'hydrocarbures halogénés
C10M 177/00 - Méthodes particulières de préparation des compositions lubrifiantesModification chimique par post-traitement des constituants ou de la composition lubrifiante elle-même, non couverte par d'autres classes
Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.
2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
B08B 5/00 - Nettoyage par des procédés impliquant l'utilisation d'un courant d'air ou de gaz
B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
B08B 7/04 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe par une combinaison d'opérations
An object is to provide a fluorine-containing copolymer composition that exhibits long-term stability as well as a fluororesin paint or varnish prepared using the composition.
An object is to provide a fluorine-containing copolymer composition that exhibits long-term stability as well as a fluororesin paint or varnish prepared using the composition.
Provided are: a composition comprising a fluorine-containing copolymer synthesized through copolymerization of 0.001 to 50 mol % of particular ethylenically unsaturated organosilicon compound polymerization units relative to 5 to 85 mol % of fluoroolefin polymerization units by a solution polymerization method, a solvent, and an amine compound; a fluororesin paint or varnish prepared using the composition; and a method of producing the fluorine-containing copolymer composition.
Provided is a tank container which can accommodate and transport powder formed of hazardous material powder or the like while suppressing the contact of the powder with moisture in the air and an increase in temperature to a temperature equal to or higher than a predetermined temperature, and which can also easily discharge the powder, and a method of manufacturing the tank container. A tank container includes: a tank main body portion formed into an airtight cylindrical shape, which is configured to accommodate powder therein, and which is closed at both ends along a longitudinal direction; a plurality of accommodation and discharge portions, which are arranged so as to be adjacent to each other along the longitudinal direction in a lower portion of the tank main body portion, which have base end portions each airtightly joined to an inner wall of the tank main body and to an adjacent portion, and which have distal end portions each formed into an inverted tapered shape so as to protrude outward respectively from openings formed on an outer peripheral surface of the tank main body portion; a heat insulating portion formed on the outer peripheral surface of the tank main body portion; and a container frame portion having the tank main body portion fixed thereto.
B65D 88/12 - Grands réceptacles rigides spécialement conçus pour le transport
B65D 88/70 - Grands réceptacles caractérisés par des moyens pour faciliter le remplissage ou le vidage en empêchant la formation de ponts par des jets de fluide
B65D 90/06 - Revêtements externes, p. ex. dans un but d'isolation
B65G 65/40 - Dispositifs pour vider autrement que par le haut
20.
COATED ZIRCONIA FINE PARTICLE AND METHOD FOR PRODUCING THE SAME
Coated zirconia fine particle containing a zirconia fine particle and a coating layer coating the surface of the fine particle. The coating layer includes one or more metal elements selected from Mg, Ca, Al and rare-earth elements, and the coated zirconia fine particle has an average particle size of 3 to 100 nm and a specific surface area of 20 to 500 m2/g.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Chemicals; chemicals in solid, liquid or gas form; fluorspar
compounds; gas for industrial purposes; caustics for
industrial purposes; chemical source material for the
deposition of thin films upon semiconductor wafers for the
manufacture of semiconductors; detergents for use in
manufacturing processes; halides; organometallic compounds.
An electrode for electrolytic fluorination contains nickel as a base material with a fluorine content <1,000 ppm. Preferably, in at least a surface portion thereof, the nickel content ≥99 mass %, the iron content ≤400 ppm, the copper content ≤250 ppm, and the manganese content ≤1,000 ppm. A method for producing an electrode includes arranging a nickel base material electrode in a nickel plating bath as a cathode, and applying nickel plating to the nickel base material electrode by electrolytic nickel plating, the method including (1) using, as an anode, a nickel component deposited on a cathode, or a nickel component that has settled in a molten salt, in a process of producing nitrogen trifluoride by molten salt electrolysis using a nickel base material anode, or the nickel base material anode; or (2) using, as the cathode, the nickel base material anode.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
Produits et services
Industrial Chemicals; Industrial chemicals in solid, liquid or gas form; fluorspar compounds; industrial gases for use in the manufacture of semiconductors and liquid crystal displays; caustics for industrial purposes; chemical source material for the deposition of thin films upon semiconductor wafers for the manufacture of semiconductors; detergents for use in manufacturing processes; halides; organometallic compounds being industrial chemicals
An object is to prevent lowering in the yield of R—COF due to contamination by impurities and thereby to produce a high-purity product of R—COF in a stable manner. According to the present invention, provided are: a method of purifying a carboxylic acid fluoride, comprising a step of removing a hydrogen halide by bringing a carboxylic acid fluoride containing the hydrogen halide into contact with a metal fluoride; a method of producing a high-purity carboxylic acid fluoride, comprising a step of bringing a carboxylic acid fluoride containing a hydrogen halide into contact with a metal fluoride as well as a high-purity carboxylic acid fluoride obtained therefrom; and a method of using a metal fluoride as an adsorbent for a hydrogen halide in a method of removing a hydrogen halide from a carboxylic acid fluoride containing the hydrogen halide.
C07C 323/58 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des groupes carboxyle liés au même squelette carboné ayant les atomes de soufre des groupes thio liés à des atomes de carbone acycliques du squelette carboné le squelette carboné étant substitué de plus par des atomes d'azote, ne faisant pas partie de groupes nitro ou nitroso avec des groupes amino liés au squelette carboné
C07C 319/14 - Préparation de thiols, de sulfures, d'hydropolysulfures ou de polysulfures de sulfures
26.
Coating composition excellent in abrasion resistance
Impurities are removed from a fluoroolefin having a structure of ═CF2 or ═CHF that has been obtained by a dehydrohalogenation reaction and that contains haloalkene, haloalkane, and/or haloalkyne impurities.
Impurities are removed from a fluoroolefin having a structure of ═CF2 or ═CHF that has been obtained by a dehydrohalogenation reaction and that contains haloalkene, haloalkane, and/or haloalkyne impurities.
Provided are: a method of purifying a fluoroolefin having a structure of ═CF2 or ═CHF, comprising bringing a fluoroolefin having a structure of ═CF2 or ═CHF that has been obtained by a dehydrohalogenation reaction and that contains at least one of haloalkane, haloalkene, and/or haloalkyne impurities into contact with a solid adsorbent to remove the impurities through adsorption; a high-purity fluoroolefin; and a production method therefor.
An object is to provide a method of producing a carboxylic acid fluoride at an increased product yield in a reaction system without forming HCl as a by-product, in other words, without forming a complex between HCl and a carboxylic acid fluoride as a product. Another object is to provide a method of producing a carboxylic acid fluoride without the necessity of using a photoreaction apparatus or a specific hydrogen fluoride adduct and hence without problems of complicating the process.
An object is to provide a method of producing a carboxylic acid fluoride at an increased product yield in a reaction system without forming HCl as a by-product, in other words, without forming a complex between HCl and a carboxylic acid fluoride as a product. Another object is to provide a method of producing a carboxylic acid fluoride without the necessity of using a photoreaction apparatus or a specific hydrogen fluoride adduct and hence without problems of complicating the process.
Provided is a method of producing a carboxylic acid fluoride, comprising reacting a carboxylic acid chloride with a metal fluoride. In this production method, the carboxylic acid is preferably a carboxylic acid having a carbon number of 1 to 7, the carboxylic acid is preferably a carboxylic acid substituted with fluorine, or the carboxylic acid is preferably trifluoroacetic acid.
C07C 51/363 - Préparation d'acides carboxyliques, de leurs sels, halogénures ou anhydrides par des réactions ne créant pas de groupes carboxyle par introduction d'atomes d'halogènePréparation d'acides carboxyliques, de leurs sels, halogénures ou anhydrides par des réactions ne créant pas de groupes carboxyle par substitution d'atomes d'halogène par des atomes d'autres halogènes
29.
Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same
A method for recovering lithium from a material that contains fluorine and lithium, wherein: the material is mixed with an aqueous sulfuric acid solution or water, thereby obtaining a mixed solution in which fluorine and lithium in the material have been dissolved; and a purified solution, in which lithium is dissolved, is obtained by means of solid-liquid separation after forming a sediment that contains fluorine and calcium by mixing the mixed solution with a poorly soluble or slightly soluble calcium-containing alkaline agent. It is preferable that, when the mixed solution is obtained, the material that contains fluorine and lithium is mixed with an aqueous sulfuric acid solution or water, and heated at a temperature within the temperature range of from 60°C to 90°C.
A method for recovering lithium, wherein after obtaining a molten metal that contains a valuable metal and a molten slag that contains at least aluminum and lithium by melting a lithium ion secondary battery to be discarded, lithium is recovered from the slag that contains at least aluminum and lithium, said slag having been separated from the molten metal that contains a valuable metal. With respect to this method for recovering lithium, the melting conditions of the lithium ion secondary battery are adjusted so that the mass ratio of aluminum to lithium contained in the slag, namely the value of aluminum/lithium is 6 or less; a leachate, into which lithium contained in the slag has leached, is obtained by bringing the slag and an aqueous liquid into contact with each other; and a purified solution, in which lithium is dissolved, is obtained by means of solid-liquid separation by bringing the leachate and a basic substance into contact with each other, thereby having unwanted metals contained in the leachate precipitate in the form of a poorly soluble substance.
C22B 3/06 - Extraction de composés métalliques par voie humide à partir de minerais ou de concentrés par lixiviation dans des solutions inorganiques acides
C22B 3/44 - Traitement ou purification de solutions, p. ex. de solutions obtenues par lixiviation par des procédés chimiques
A method for recovering lithium from a material that contains fluorine and lithium, wherein: the material is mixed with an aqueous sulfuric acid solution or water, thereby obtaining a mixed solution in which fluorine and lithium in the material have been dissolved; and a purified solution, in which lithium is dissolved, is obtained by means of solid-liquid separation after forming a sediment that contains fluorine and calcium by mixing the mixed solution with a poorly soluble or slightly soluble calcium-containing alkaline agent. It is preferable that, when the mixed solution is obtained, the material that contains fluorine and lithium is mixed with an aqueous sulfuric acid solution or water, and heated at a temperature within the temperature range of from 60°C to 90°C.
Provided is a tank container capable of accommodating and transporting powder comprising hazardous material powder, etc., while preventing the powder from coming into contact with moisture in the air or from rising to or above a predetermined temperature, and capable of easily discharging the powder. Also provided is a method for manufacturing the tank container. The present invention is equipped with: an airtight cylindrical tank body that accommodates powder inside and is closed at both ends along the longitudinal direction; a plurality of accommodation and discharge portions that are arranged adjacent to each other along the longitudinal direction in the lower part of the tank body, and have base ends airtightly bonded to the inner wall of the tank body and to the adjacent parts, and leading ends formed in the shape of inverted pyramids in such a manner as to project outward from openings that are formed on the outer peripheral surface of the tank body; a heat insulating portion that is disposed on the outer peripheral surface of the tank body; and a container frame portion to which the tank body is fixed.
B65D 88/12 - Grands réceptacles rigides spécialement conçus pour le transport
B65D 88/64 - Grands réceptacles caractérisés par des moyens pour faciliter le remplissage ou le vidage en empêchant la formation de ponts
B65D 88/70 - Grands réceptacles caractérisés par des moyens pour faciliter le remplissage ou le vidage en empêchant la formation de ponts par des jets de fluide
A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf—COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or —COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).
The purpose of the present invention is to provide a fluorine-containing copolymer composition that is stable over a long period of time, and a fluororesin coating or varnish in which said composition is used. Provided are: a composition containing a solvent, an amino compound, and a fluorine-containing copolymer synthesized by copolymerizing, by means of a solution polymerization method, 0.001-50 mol% of a specified ethylene-based unsaturated organic silicon compound polymerization unit with 5-85 mol% of a fluoroolefin polymerization unit; a fluororesin coating or varnish in which said composition is used; and a production method for the fluorine-containing copolymer composition.
C08L 27/12 - Compositions contenant des homopolymères ou des copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un halogèneCompositions contenant des dérivés de tels polymères non modifiées par un post-traitement chimique contenant du fluor
C09D 127/12 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un halogèneCompositions de revêtement à base de dérivés de tels polymères non modifiés par un post-traitement chimique contenant des atomes de fluor
C09D 143/04 - Homopolymères ou copolymères de monomères contenant du silicium
C09D 7/63 - Adjuvants non macromoléculaires organiques
38.
Plasma etching method using gas molecule containing sulfur atom
Provided is a method for stably providing a high purity R-COF product, the method configured so that a reduction in R-COF yield caused by contamination by impurities is prevented. According to the present invention, provided are: a method for purifying a carboxylic acid fluoride, the method including a step for bringing a hydrogen halide-containing carboxylic acid fluoride into contact with a metal fluoride so as to remove the hydrogen halide; a method for producing a high purity carboxylic acid fluoride, the method including a step for bringing a hydrogen halide-containing carboxylic acid fluoride into contact with a metal fluoride; a high-purity carboxylic acid fluoride obtained using this method; and a method for using a metal fluoride as a hydrogen halide adsorbent in a method for removing a hydrogen halide from a hydrogen halide-containing carboxylic acid fluoride.
The present invention is a coated zirconia microparticle comprising a zirconia microparticle and a coating layer that coats the surface of the microparticle, wherein: the coating layer contains one or more metal elements selected from Mg, Ca, Al and a rare earth element; the average particle diameter is 3 to 100 nm; and the specific surface area is 20 to 500 m2/g.
Provided is a novel compound that is expected to be used as a solvent, a cleaning agent, a blowing agent, an intermediate for a functional material, and so forth, as well as a production method therefor and uses thereof
As the novel compound, 1,2-dichoro-1-(2,2,2-trifluoroethoxy)ethylene is provided. This compound can be produced, for example, by allowing an addition reaction between 2,2,2-trifluoroethanol and trichloroethylene in the presence of a base.
C07C 43/17 - Éthers non saturés contenant des atomes d'halogène
C11D 7/32 - Composés organiques contenant de l'azote
C07C 41/06 - Préparation d'éthers par addition de composés à des composés non saturés uniquement par addition de composés organiques
C11D 7/28 - Composés organiques contenant un halogène
C07C 41/09 - Préparation d'éthers par déshydratation de composés contenant des groupes hydroxyle
C08J 9/14 - Mise en œuvre de substances macromoléculaires pour produire des matériaux ou objets poreux ou alvéolairesLeur post-traitement utilisant des gaz de gonflage produits par un agent de gonflage introduit au préalable par un agent physique de gonflage organique
42.
Production method and production apparatus for molybdenum hexafluoride
B01J 8/02 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés avec des particules immobiles, p. ex. dans des lits fixes
Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.
2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
B08B 5/00 - Nettoyage par des procédés impliquant l'utilisation d'un courant d'air ou de gaz
B08B 7/00 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe
B08B 7/04 - Nettoyage par des procédés non prévus dans une seule autre sous-classe ou un seul groupe de la présente sous-classe par une combinaison d'opérations
2222 or =CHF structure and containing at least one type of impurity from among haloalkanes and/or haloalkenes and/or haloalkynes obtained by a dehydrohalogenation reaction, and adsorption-removing the impurities; a high-purity fluoroolefin; and a manufacturing method therefor.
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
B32B 27/30 - Produits stratifiés composés essentiellement de résine synthétique comprenant une résine vinyliqueProduits stratifiés composés essentiellement de résine synthétique comprenant une résine acrylique
B32B 27/36 - Produits stratifiés composés essentiellement de résine synthétique comprenant des polyesters
C09D 127/12 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un halogèneCompositions de revêtement à base de dérivés de tels polymères non modifiés par un post-traitement chimique contenant des atomes de fluor
C09D 143/04 - Homopolymères ou copolymères de monomères contenant du silicium
C09D 169/00 - Compositions de revêtement à base de polycarbonatesCompositions de revêtement à base de dérivés de polycarbonates
C09D 201/04 - Compositions de revêtement à base de composés macromoléculaires non spécifiés caractérisés par la présence de groupes déterminés contenant des atomes d'halogène
C09D 7/63 - Adjuvants non macromoléculaires organiques
The present invention aims to provide a carboxylic acid fluoride production method having improved product yield, without creating an HCl by-product in the reaction system, i.e., without forming a complex with carboxylic acid fluoride having HCl as the product thereof. The present invention also aims to provide a production method for carboxylic acid fluoride whereby the use of a photoreaction device or specific hydrogen fluoride adduct is not required and the issue of complication of the work process does not arise. Provided is a carboxylic acid fluoride production method that includes a step in which carboxylic acid chloride and a metal fluoride are reacted. In this production method, the carboxylic acid is ideally a C1–7 carboxylic acid, the carboxylic acid is ideally a fluorine-substituted carboxylic acid, and the carboxylic acid is ideally a trifluoro acetic acid.
9 is each independently hydrogen, fluorine, or chlorine; X is bromine or iodine] to a coupling reaction in the presence of a zero-valent metal and a metal salt.
C07C 17/266 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions de condensation d'hydrocarbures et d'hydrocarbures halogénés
C07C 17/269 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions de condensation d'hydrocarbures halogénés uniquement
C07C 17/275 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions d'addition d'hydrocarbures et d'hydrocarbures halogénés
C07C 17/278 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions d'addition d'hydrocarbures halogénés uniquement
C07C 17/281 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions d'addition d'hydrocarbures halogénés uniquement d'un seul composé
C07C 17/263 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions de condensation
C07C 17/26 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette
C07C 17/272 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions d'addition
48.
Method of producing fluorine-containing sulfide compounds
C07C 319/20 - Préparation de thiols, de sulfures, d'hydropolysulfures ou de polysulfures de sulfures par des réactions n'impliquant pas la formation de groupes sulfure
C07C 323/03 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des atomes d'halogène ou des groupes nitro ou nitroso liés au même squelette carboné ayant des atomes de soufre de groupes thio liés à des atomes de carbone acycliques du squelette carboné le squelette carboné étant acyclique et saturé
−1 in wavenumber, and the concentration of the fluorine-based gas is quantified based on an amount of absorption of light having a predetermined wavenumber by the sample and a calibration curve.
G01N 21/3504 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p. ex. analyse de mélanges de gaz
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
G01N 21/35 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
50.
NON-AQUEOUS ELECTROLYTE SOLUTION AND POWER STORAGE DEVICE USING SAME
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
H01G 11/64 - Électrolytes liquides caractérisés par les additifs
H01M 4/485 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques d'oxydes ou d'hydroxydes mixtes pour insérer ou intercaler des métaux légers, p. ex. LiTi2O4 ou LiTi2OxFy
An electrolytic cell has a partition that covers an upper region of one electrode of an anode and a cathode in order to separate a gas generated from the anode and a gas generated from the cathode from each other. The partition has wall surfaces that are each opposite a surface of the electrode. The wall surfaces have, in lower end-side regions thereof, ribs extending in a direction that has a lateral direction component. The ribs and the partition are made of a fluororesin and are integrally formed.
Disclosed is a nonaqueous electrolyte solution containing a lithium electrolyte, methyl 3,3,3-trifluoropropionate, and a phosphazene compound. Preferably, the phosphazene compound is a cyclic phosphazene compound represented by the disclosed general formula (I).
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
53.
Dry etching gas composition and dry etching method
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
54.
DRY ETCHING GAS COMPOSITION INCLUDING SULFUR-CONTAINING FLUOROCARBON COMPOUND HAVING UNSATURATED BOND, AND DRY ETCHING METHOD USING SAME
Provided is a novel etching gas composition including a sulfur-containing unsaturated compound, which is useful for etching a silicon-based film laminated structure. The dry etching gas composition includes a sulfur-containing fluorocarbon compound having an unsaturated bond and represented by a general formula (1): CxFySz (where x, y and z are 2 ≤ x ≤ 5, y ≤ 2x, 1 ≤ z ≤ 2).
22 with respect to a low dielectric constant material (Low-k material (SiON, SiCN, SiOCN, SiOC)). This dry etching gas composition contains a saturated and cyclic sulfur-containing fluorocarbon compound represented by general formula (1): CxFySz (in the formula, x, y, and z are 2 ≤ x ≤ 5, y ≤ 2x, 1 ≤ z ≤ 2).
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/336 - Transistors à effet de champ à grille isolée
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 27/11582 - Mémoires mortes programmables électriquement; Procédés de fabrication à étapes multiples de ces dispositifs avec isolateurs de grille à piégeage de charge, p.ex. MNOS ou NROM caractérisées par des agencements tridimensionnels, p.ex. avec des cellules à des niveaux différents de hauteur la région de source et la région de drain étant à différents niveaux, p.ex. avec des canaux inclinés les canaux comprenant des parties verticales, p.ex. canaux en forme de U
H01L 29/788 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à grille flottante
H01L 29/792 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée à isolant de grille à emmagasinage de charges, p.ex. transistor de mémoire MNOS
Disclosed is a method for producing phosphorus pentafluoride, including mixing and reacting phosphorus trichloride and chlorine with a large excess of anhydrous hydrogen fluoride liquid, thereby producing phosphorus pentafluoride, wherein heat of reaction generated through the production of phosphorus pentafluoride is removed with latent heat of evaporation of hydrogen fluoride. It is preferable that the anhydrous hydrogen fluoride liquid is circulated, and, in this state, phosphorus trichloride and chlorine are mixed with the anhydrous hydrogen fluoride liquid. Furthermore, it is also preferable that the anhydrous hydrogen fluoride liquid is circulated along a circulation path, or that the anhydrous hydrogen fluoride liquid is circulated through stirring in a reaction vessel.
In a method for gas-flow carrying a solid particle, the solid particle includes a solid substance generating a dissociation equilibrium reaction that dissociates at least one type of gas component, and the solid particle is carried by a gas flow containing the gas component. The average particle diameter of the solid particle is preferably 0.1-1.0 mm. The solid particle is preferably carried by the gas flow in the state of a suspended flow, a fluidized flow, or a plug flow. The solid particle preferably includes a solid substance to generate a dissociation equilibrium reaction that dissociates at least one gas component and at least one solid component, and the solid particle is preferably carried by the gas flow in a carrying pipe and the solid particle or the solid component that has adhered to the interior surface of the carrying pipe is removed by the gas flow.
B65G 53/16 - Systèmes de pression de gaz fonctionnant avec fluidification des matériaux
B01J 8/00 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés
B01J 8/18 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés les particules étant fluidisées
59.
PLASMA ETCHING METHOD USING GAS MOLECULE CONTAINING SULFUR ATOM
22121xyz2abc22 and SiN or a composite material containing the material, a protection film which has a reduced fluorine atom content compared with the case where a conventional hydrofluorocarbon gas is used and which contains a sulfur atom can be deposited. Therefoe, it becomes possible, for example, to improve the selectivity for a mask material or other materials that are not to be etched, and to reduce the damage to a side wall, and to prevent the etching in a transverse direction.
222) gas inlet which is provided on the upstream side of the reactor, and a reaction product gas outlet which is provided on the downstream side of the reactor, the method being characterized in that the fixed bed for placement of metallic molybdenum is tilted.
nn-A3-S-A4mm (wherein A3and A4independently represent a hydrocarbon group which contains 1 to 3 carbon atoms and may be substituted; n and m respectively represent the number of fluorine atoms bonded to A3and the number of fluorine atoms bonded to A4nn-A1-S-A2mm (wherein A1and A2independently represent a hydrocarbon group which has 1 to 3 carbon atoms and may be substituted; n and m respectively represent the number of chlorine atoms bonded to A1and the number of chlorine atoms bonded to A2; and the requirement represented by the formula: n+m = 1 to 13 is satisfied) with a fluorinating agent.
C07C 319/20 - Préparation de thiols, de sulfures, d'hydropolysulfures ou de polysulfures de sulfures par des réactions n'impliquant pas la formation de groupes sulfure
C07C 323/03 - Thiols, sulfures, hydropolysulfures ou polysulfures substitués par des halogènes, des atomes d'oxygène ou d'azote ou par des atomes de soufre ne faisant pas partie de groupes thio contenant des groupes thio et des atomes d'halogène ou des groupes nitro ou nitroso liés au même squelette carboné ayant des atomes de soufre de groupes thio liés à des atomes de carbone acycliques du squelette carboné le squelette carboné étant acyclique et saturé
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
02 - Couleurs, vernis, laques
Produits et services
Chemicals for use in industry; fluorspar compounds;
solidified, liquefied, and compressed gases for industrial
purposes, excluding fuels, for use in manufacturing of
semiconductors, liquid crystals, optical fibers, and high
capacity transformers; caustic soda (sodium hydroxide);
sodium hypochlorite; aluminium chloride; hydrochloric acid;
trichloroethylene; perchloroethylene; vinylidene chloride;
alcohol for industrial purposes; caustics for industrial
purposes; chemical agents for processing insulating resins;
chemical materials for forming thin films on semiconductor
wafers for semiconductor manufacturing; surface-active
chemical agents; electrolytic solution for batteries;
electrolytes for batteries; bleaching preparations
[decolorants] for industrial purposes; chemical coatings
used in industry (excluding paints); fluorine resin coatings
used in industry (excluding paints); detergents for use in
manufacturing processes; spinel [oxide mineral]. Pigments; coating compositions in the nature of paint;
fluorine resin coatings in the nature of paint.
The present invention provides a method and a device for measuring and analyzing impurities or hydrogen fluoride in a corrosive gas with high sensitivity without requiring a pretreatment. The method and device measure a fluorine-based gas in a sample containing a corrosive gas by means of a Fourier transform infrared spectrophotometer provided with: a detector having an InGaAs detection element; and a single pass gas cell having an optical path length of 0.01-2 m, wherein a cell window is formed of a corrosion resistant material, the measurement wavenumber range is 3800-14300 cm-1, and the fluorine-based gas concentration is quantified from a preset calibration curve and the amount of light having a predetermined wavenumber absorbed by the sample.
G01N 21/3504 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge pour l'analyse des gaz, p. ex. analyse de mélanges de gaz
The purpose of the present invention is to provide a method for industrially producing a compound having a polyene skeleton containing hydrogen and fluorine and/or chlorine simply and at low cost. A method for producing a halogenated diene represented by formula (1): A1A2C=CA3–CA4=CA5A6[In the formula: A1, A2, A5and A6independently represent hydrogen, fluorine or chlorine, a C1-3 (perfluoro)alkyl group or a (perfluoro)alkenyl group; A3and A4independently represent hydrogen, fluorine or chlorine; at least one of A1to A6represents hydrogen; and at least one of A1to A6represents fluorine or chlorine.] Furthermore, said method includes a step in which the same or different halogenated olefins undergo a coupling reaction in the presence of a zerovalent metal and metal salt, said halogenated olefins being represented by formula (2): A7A8C=CA9X [In the formula: A7and A8independently represent hydrogen, fluorine or chlorine, a C1-3 (perfluoro)alkyl group, or a (perfluoro)alkenyl group; A9 independently represents hydrogen, fluorine or chlorine; and X represents bromine or iodine.]
C07C 17/269 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions de condensation d'hydrocarbures halogénés uniquement
The present invention provides: a novel compound which is expected to be used as an intermediate for solvents, cleaning agents, foaming agents, functional materials, and the like; a method for producing this novel compound; and a use of this novel compound. Provided as this novel compound is a chlorinated bis(3, 3, 3-trifluoro-1-propenyl) ether. This novel compound includes a (1-chloro-3, 3, 3-trifluoro-1-propenyl) (3, 3, 3-trifluoro-1-propenyl) ether and a bis(1-chloro-3, 3, 3-trifluoro-1-propenyl) ether. The bis(1-chloro-3, 3, 3-trifluoro-1-propenyl) ether is able to be produced, for example, by subjecting a bis(1, 1-dichloro-3, 3, 3-trifluoropropyl) ether to a dehydrochlorination reaction in a liquid phase in the presence of a base.
C07C 43/17 - Éthers non saturés contenant des atomes d'halogène
C07C 41/24 - Préparation d'éthers par des réactions ne formant pas de liaisons sur l'oxygène de la fonction éther par élimination d'atomes d'halogène, p. ex. par élimination d'HCl
NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY (Japon)
Inventeur(s)
Amii, Hideki
Komoda, Kazuki
Kobayashi, Masafumi
Nakamura, Yutaka
Obinata, Ryusuke
Harada, Akinori
Abrégé
A simple production process is provided of a perfluoroalkyl compound that uses monohydroperfluoroalkane as a starting material, the perfluoroalkyl compound being an important intermediate of organic electronic materials, medicine, agricultural chemicals, functional polymer materials and the like. With monohydroperfluoroalkane is reacted a base and then a carbonyl compound to produce an alcohol having a perfluoroalkyl group. For example, potassium hydroxide is made to interact with trifluoromethane, and a reaction with a carbonyl compound is induced to produce an alcohol having a trifluoromethyl group.
C07C 29/38 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par des réactions augmentant le nombre d'atomes de carbone avec formation de groupes hydroxyle, ces groupes pouvant être produits par l'intermédiaire de dérivés de groupes hydroxyle, p. ex. du dérivé O-métal par réactions avec des aldéhydes ou des cétones
C07C 31/125 - Alcools monohydroxyliques acycliques contenant de cinq à vingt-deux atomes de carbone
C07C 33/46 - Alcools non saturés halogénés ne contenant que des cycles aromatiques à six chaînons dans la partie cyclique
C07C 43/23 - Éthers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons contenant des groupes hydroxyle ou O-métal
C07C 209/68 - Préparation de composés contenant des groupes amino liés à un squelette carboné à partir d'amines, par des réactions n'impliquant pas de groupes amino, p. ex. réduction d'amines non saturées, aromatisation ou substitution du squelette carboné
C07C 231/12 - Préparation d'amides d'acides carboxyliques par des réactions n'impliquant pas la formation de groupes carboxamide
C07C 233/15 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone acycliques ayant l'atome d'azote d'au moins un des groupes carboxamide lié à un atome de carbone d'un radical hydrocarboné substitué par des atomes d'halogène ou par des groupes nitro ou nitroso avec le radical hydrocarboné substitué lié à l'atome d'azote du groupe carboxamide par un atome de carbone d'un cycle aromatique à six chaînons
C07C 41/30 - Préparation d'éthers par des réactions ne formant pas de liaisons sur l'oxygène de la fonction éther par augmentation du nombre d'atomes de carbone, p. ex. par oligomérisation
C07C 209/78 - Préparation de composés contenant des groupes amino liés à un squelette carboné à partir d'amines, par des réactions n'impliquant pas de groupes amino, p. ex. réduction d'amines non saturées, aromatisation ou substitution du squelette carboné à partir de composés carbonylés, p. ex. à partir de formaldéhyde, et d'amines ayant des groupes amino liés à des atomes de carbone de cycles aromatiques à six chaînons, avec formation de méthylène-diarylamines
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
02 - Couleurs, vernis, laques
Produits et services
Chemicals for use in industry; fluorspar compounds; solidified, liquefied, and compressed gases for industrial purposes, excluding fuels, for use in manufacturing of semiconductors, liquid crystals, optical fibers, and high capacity transformers; caustic soda; sodium hydroxide; sodium hypochlorite; aluminium chloride; hydrochloric acid; trichloroethylene; perchloroethylene; vinylidene chloride; alcohol for industrial purposes; caustics for industrial purposes; chemical agents for processing insulating resins; chemical materials for forming thin films on semiconductor wafers for semiconductor manufacturing; surface-active chemical agents; electrolytic solution for batteries; electrolytes for batteries; bleaching preparations for industrial purposes; chemical coatings used in industry excluding paints; fluorine resin coatings used in industry excluding paints; detergents for use in manufacturing processes; oxides; spinel structure compounds, namely, spinel ferrites and synthetic magnetite Pigments; coating compositions in the nature of paint; fluorine resin coatings in the nature of paint
68.
1, 2-DICHLORO-1-(2, 2, 2-TRIFLUOROETHOXY)ETHYLENE, METHOD FOR PRODUCING SAME, AND USE OF SAME
The present invention provides: a novel compound which is expected to be used as a solvent, a cleaning agent, a foaming agent, an intermediate for functional materials, and the like; a method for producing this novel compound; and a use of this novel compound. The present invention provides, as this novel compound, 1, 2-dichloro-1-(2, 2, 2-trifluoroethoxy)ethylene. This compound is able to be produced, for example, by subjecting 2, 2, 2-trifluoroethanol and trichloroethylene to an addition reaction in the presence of a base.
An electrolytic bath (1) having a partition (10) for covering the upper region of one electrode among the negative electrode (11) and the positive electrode (12) in order to separate a gas produced by the positive electrode (11) and a gas produced by the negative electrode (12) from one another, wherein: the partition (10) has wall surfaces (10a, 10b) which each face one surface of the electrode (11); the wall surfaces (10a, 10b) have ribs (50, 51) extending in a direction having a horizontal component in the bottom end-side region thereof; and the ribs (50, 51) and the partition (10) comprise a fluorine resin and are integrally formed with one another.
The present invention provides a nonaqueous electrolyte solution which contains a lithium electrolyte, 3, 3, 3-trifluoropropionic acid methyl and a phosphazene compound. It is preferable that the phosphazene compound is a cyclic phosphazene compound represented by general formula (I). (In the formula, each R independently represents a halogen atom or a group that is selected from among an alkoxy group, an aryloxy group, an alkyl group, an aryl group, an amino group, an alkylthio group and an arylthio group; and p represents 3 or 4.) The present invention also provides a nonaqueous electrolyte battery which is provided with a positive electrode and a negative electrode, while containing the above-described nonaqueous electrolyte solution.
This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for removing unwanted film, such as a Si-containing deposit, attached to the interior of the processing room or processing vessel after a processing operation without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
72.
Material, storage container using the material, valve attached to the storage container, method of storing ClF and method of using ClF storage container
F17C 1/10 - Récipients sous pression, p. ex. bouteilles de gaz, réservoirs de gaz, cartouches échangeables avec des moyens pour assurer une protection contre la corrosion, p. ex. due à un acide à l'état gazeux
F16K 1/30 - Soupapes ou clapets, c.-à-d. dispositifs obturateurs dont l'élément de fermeture possède au moins une composante du mouvement d'ouverture ou de fermeture perpendiculaire à la surface d'obturation spécialement adaptées pour réceptacles sous pression
F16K 1/04 - Soupapes ou clapets, c.-à-d. dispositifs obturateurs dont l'élément de fermeture possède au moins une composante du mouvement d'ouverture ou de fermeture perpendiculaire à la surface d'obturation à tige filetée et dont l'élément de fermeture fait corps avec la tige, p. ex. soupapes principales
F16K 25/00 - Détails constitutifs relatifs au contact entre corps de soupapes ou de clapets et leurs sièges
C23C 8/06 - Diffusion à l'état solide uniquement d'éléments non métalliques dans la couche superficielle de matériaux métalliquesTraitement chimique de surface par réaction entre le matériau métallique de la surface et un gaz réactif, laissant dans le revêtement des produits de la réaction, p. ex. revêtement de conversion, passivation des métaux au moyen de gaz
F16K 31/50 - Moyens mécaniques d'actionnement à tige-guide filetée
F16K 41/02 - Joints d'étanchéité pour tiges avec un presse-étoupe
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
Provided is a method for atomic layer etching a silicon oxide film or silicon nitride film. The atomic layer etching is performed by repeating the three steps of: a hydrogenation step (1) for irradiating a silicon oxide or silicon nitride film with a H-containing plasma to hydrogenate the surface thereof; an acid halide adsorption step (2) in which an acid halide represented by the formula of Rf-COX (in the formula, Rf is -COX or a substituent consisting of H, F, C and F, or C, H, and F, and each X is independently a halogen atom selected from among F, Cl, Br, and I) is exposed and reacted with the hydrogenated surface, and Rf-COX is chemisorbed on the surface; and an etching step (3) for irradiating the acid halide-adsorbed silicon oxide or silicon nitride film with a noble gas (at least one among He, Ar, Ne, Kr, and Xe)-containing plasma to induce a chemical reaction on the surface and etch a single atomic layer.
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
02 - Couleurs, vernis, laques
Produits et services
Chemicals for use in industry; fluorspar compounds; industrial gases for use in manufacturing of semiconductor, liquid crystals, optical fibers, and high capacity transformers; Caustic soda (sodium hydroxide); sodium hypochlorite; aluminium chloride; hydrochloric acid; trichloroethylene; perchloroethylene; vinylidene chloride; Alcohol for industrial purposes; caustics for industrial purposes; chemical agents for processing insulating resins; chemical materials for forming thin films on semiconductor wafers for semiconductor manufacturing; surface-active chemical agents; electrolytic solution for batteries; electrolytes for batteries; bleaching preparations (decolorants) for industrial purposes; chemical coatings used in industry excluding paints, namely, chemical coatings used in the manufacture of printed circuit boards and surface coated magnetic particles; fluorine resin coatings used in industry excluding paints, namely, chemical agents made from fluorine resin for coating of surfaces of subject materials; detergents for use in manufacturing processes; spinel structure compounds, namely, spinel ferrites and synthetic magnetite Pigments; Coating compositions in the nature of paint; fluorine resins in the nature of paint
75.
ELECTRODE AND PRODUCTION METHOD THEREFOR, AND PRODUCTION METHOD FOR REGENERATED ELECTRODE
This electrode for electrolytic fluorination according to the present invention contains nickel as a base material, and has a fluorine content of less than 1,000 ppm. The electrode preferably has, in at least a surface portion thereof, a nickel content of 99 mass% or more, an iron content of 400 ppm or less, a copper content of 250 ppm or less, and a manganese content of 1000 ppm or less. The production method for the electrode according to the present invention comprises disposing a nickel base material electrode as a cathode in a nickel plating bath, and applying nickel plating to the nickel base material electrode by an electrolytic nickel plating method, wherein (1) a nickel component which has precipitated in a molten salt or which has deposited on a cathode in a nitrogen trifluoride production step performed by molten salt electrolysis using a nickel base material anode, or said nickel base material anode, is used an anode, or (2) said nickel base material anode is used as a cathode.
NATIONAL UNIVERSITY CORPORATION, KYOTO INSTITUTE OF TECHNOLOGY (Japon)
Inventeur(s)
Yoshiyama Kazuhide
Naka Kensuke
Matsukawa Kimihiro
Abrégé
The present invention is a thermally conductive particle-filled fiber which contains a resin and thermally conductive particles, and wherein: at least some of the thermally conductive particles are present within the fiber; the thermally conductive particles have an average particle diameter of 10-1,000 nm; and the average fiber diameter is 50-10,000 nm.
D01F 6/44 - Filaments, ou similaires, faits par l’homme, à un seul composant, formés de polymères synthétiquesLeur fabrication à partir de mélanges de polymères obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone comme constituant majeur avec d'autres polymères ou des composés de bas poids moléculaire
01 - Produits chimiques destinés à l'industrie, aux sciences ainsi qu'à l'agriculture
02 - Couleurs, vernis, laques
Produits et services
Chemicals for use in industry; fluorspar compounds; industrial gases; Caustic soda (sodium hydroxide); sodium hypochlorite; aluminium chloride; hydrochloric acid; trichloroethylene; perchloroethylene; vinylidene chloride; Alcohol for industrial purposes; caustics for industrial purposes; chemical agents for processing insulating resins; chemical materials for forming thin films on semiconductor wafers for semiconductor manufacturing; surface-active chemical agents; electrolytic solution for batteries; electrolytes for batteries; bleaching preparations [decolorants] for industrial purposes; chemical coatings used in industry (excluding paints); fluorine resin coatings used in industry (excluding paints); detergents for use in manufacturing processes; spinel [oxide mineral]. Pigments; Coating compositions in the nature of paint; fluorine resins in the nature of paint.
A chlorine fluoride feeding device and feeding process are provided that can stably generate industrially applicable chlorine fluoride (ClF), control flow rate, and provide continual feed.
The feeding process of chlorine fluoride of this invention is a feeding process to feed chlorine fluoride generated by loading a gas that contains fluorine atoms and a gas that contains chlorine atoms to a flow-type heat reactor or a plasma reactor, and it can stably generate and safely feed chlorine fluoride for a long time by reacting chlorine fluoride that is difficult to pack at a high pressure, such that an amount that can be packed in a gas container such as a gas cylinder is limited, with two or more types of gas materials that can be packed safely in a gas container by liquefaction, or with such gas material and a solid material.
A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.
The purpose of the present invention is to provide: a coated inorganic fine particle suitable for use as a transparent nanocomposite material in optical members, electronic components, coating materials, dental materials, and the like; and a method for producing the coated inorganic fine particle. Provided is a coated inorganic fine particle which has a coating layer and is obtained by reacting at least one among compounds represented by formulae (A-1), (A-2), (B-1), (B-2), (C), (D-1), and (D-2), and salts thereof on the surface of an inorganic fine particle, wherein the inorganic fine particle has an average particle size of at least 1 nm and less than 100 nm, a specific surface area of at least 1 m2/g and less than 3,000 m2/g, and a volatile organic compound content of less than 100 ppm. According to the present invention, a transparent nanocomposite material which is excellent for mass production, and in which inorganic fine particles are uniformly dispersed without aggregation even at high concentrations, can be obtained.
NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY (Japon)
Inventeur(s)
Amii, Hideki
Shimoda, Mitsuharu
Iketani, Yoshihiko
Kimura, Ryo
Abrégé
The purpose of the present invention is to provide a method for conveniently and industrially producing at low cost, a compound having a polyene skeleton and containing hydrogen and fluorine and/or chlorine. Provided is a method for producing a halogenated diene represented by formula (1), A1A2C=CA3-CA4=CA5A6 [in the formula, A1, A2, A5, and A6 independently represent hydrogen, fluorine or chlorine, a C1-3 (perfluoro) alkyl group or (perfluoro) alkenyl group, A3 and A4 independently represent hydrogen, fluorine or chlorine, at least one among A1-A6 represents hydrogen, and at least one among A1-A6 represents fluorine or chlorine], the method comprising a step for subjecting identical or different halogenated olefins represented by formula (2), A7A8C=CA9X [in the formula, A7 and A8 independently represent hydrogen, fluorine or chlorine, a C1-3 (perfluoro) alkyl group or (perfluoro) alkenyl group, A9 independently represents hydrogen, fluorine or chlorine, and X represents bromine or iodine], to a coupling reaction in the presence of a zero-valent metal.
C07C 17/269 - Préparation d'hydrocarbures halogénés par des réactions comportant un accroissement du nombre des atomes de carbone dans le squelette par des réactions de condensation d'hydrocarbures halogénés uniquement
The present invention is a fluorine-containing copolymer containing:(A) 15-85 mol% of a fluoroolefin in the constituent monomers; (B) 0.001-10 mol% of a specific organosilicon compound in the constituent monomers; (C) of the constituent monomers, 5-40 mol% of one or more monomers selected from monomers that do not have a curing reactive group, have a C1-20 aliphatic saturated hydrocarbon group, and have a glass transition temperature of a homopolymer of the monomer of less than 0°C, the monomers being selected from vinyl ethers, vinyl esters, methacrylic acid esters, and acrylic acid esters; and (D) of the constituent monomers, 1-25 mol% of one or more monomers selected from monomers having a curing reactive group, the monomers being selected from vinyl ethers, vinyl esters, allyl ethers, methacrylic acid esters, and acrylic acid esters, wherein the fluorine-containing monomer has a glass transition temperature of -30°C to 20°C, a number average molecular weight of 2.0 x 104 to 7.0 x 104, and a weight average molecular weight of 1.0 x 105 to 3.0 x 105.
C08F 216/12 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un radical alcool, éther, aldéhyde, cétone, acétal ou cétal par un radical éther
C08F 220/18 - Esters des alcools ou des phénols monohydriques des phénols ou des alcools contenant plusieurs atomes de carbone avec l'acide acrylique ou l'acide méthacrylique
C08F 230/08 - Copolymères de composés contenant un ou plusieurs radicaux aliphatiques non saturés, chaque radical ne contenant qu'une seule liaison double carbone-carbone et contenant du phosphore, du sélénium, du tellure ou un métal contenant un métal contenant du silicium
C09D 127/12 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un halogèneCompositions de revêtement à base de dérivés de tels polymères non modifiés par un post-traitement chimique contenant des atomes de fluor
83.
DRY ETCHING GAS COMPOSITION AND DRY ETCHING METHOD
There is used a dry etching gas composition containing a saturated or unsaturated hydrofluorocarbon compound represented by general formula (1): CxHyFz (where x, y, and z are integers satisfying 2 ≤ x ≤ 4, y + z ≤ 2x + 2, and 0.5 < z/y < 2) (excluding 1,1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane). Using the etching gas composition containing this hydrofluorocarbon makes it possible to selectively etch (b1) a silicon-based film containing nitrogen, with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.
A method for selectively etching a film comprising Si, such as polycrystalline silicon (poly-Si), single-crystalline silicon (single-crystalline Si), or amorphous silicon (a-Si) as a principal component. Also provided is a cleaning method for removing a deposit or an attachment comprising Si as a major component that has become deposited or attached in a sample chamber of a device for performing film formation, such as a chemical vapor deposition (CVD) device, without damaging the inside of the device. A monofluoro interhalogen gas (XF, where X is one of Cl, Br, and I) and nitrogen monoxide (NO) are simultaneously introduced into a device for performing etching or film formation and excited by heat, whereby it becomes possible to reduce the etch rate for SiN or SiO2 and to selectively and rapidly etch a film comprising Si, such as poly-Si, single-crystalline Si, or a-Si, as a major component. It is also possible to perform cleaning by removing a deposit or an attachment comprising Si as a major component that has become deposited or attached in a device for performing film formation, such as a CVD device, without damaging the inside of the device.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
The present invention is a coating composition which contains (A) a fluorine-containing copolymer, (B) a solvent and (C) fine resin particles which satisfy the conditions 1 to 5 described below. Condition 1: The fine resin particles have an average particle diameter of 0.1-50 μm. Condition 2: The refractive index of the fine resin particles at 20°C is 0.8 to 1.2 times the refractive index of a film, which is formed from the fluorine-containing copolymer (A), at 20°C. Condition 3: The fine resin particles have a 10% compressive strength of 40 MPa or less. Condition 4: The fine resin particles have a compressibility of 20% or more. Condition 5: The fine resin particles do not undergo brittle fracture under a load of 0.1 mN.
C09D 127/12 - Compositions de revêtement à base d'homopolymères ou de copolymères de composés possédant un ou plusieurs radicaux aliphatiques non saturés, chacun ne contenant qu'une seule liaison double carbone-carbone et l'un au moins étant terminé par un halogèneCompositions de revêtement à base de dérivés de tels polymères non modifiés par un post-traitement chimique contenant des atomes de fluor
B05D 7/24 - Procédés, autres que le flocage, spécialement adaptés pour appliquer des liquides ou d'autres matériaux fluides, à des surfaces particulières, ou pour appliquer des liquides ou d'autres matériaux fluides particuliers pour appliquer des liquides ou d'autres matériaux fluides particuliers
In this method for producing phosphorus pentafluoride, phosphorus trichloride and chlorine are mixed with and reacted with an anhydrous hydrogen fluoride fluid in large excess thereof to produce phosphorus pentafluoride, and the heat of reaction generated from the generation of the phosphorus pentafluoride is eliminated by evaporative latent heat of hydrogen fluoride. It is preferable that the anhydrous hydrogen fluoride fluid is circulated and under that condition, phosphorus trichloride and chlorine are mixed with the anhydrous hydrogen fluoride fluid. It is also preferable that the anhydrous hydrogen fluoride fluid is circulated in a circulation pathway, or the anhydrous hydrogen fluoride fluid is stirred in a reaction vessel for circulation.
Provided is a method for gas-flow carrying a solid particle, wherein the solid particle comprises a solid substance which can generate a dissociation equilibrium reaction that dissociates at least one type of gas component, and the solid particle is carried by a gas flow containing the gas component. The average particle diameter of the solid particle is preferably 0.1 to 1.0 mm. The solid particle is preferably carried by the gas flow in the state of a suspended flow, a fluidized flow, or a plug flow. The solid particle preferably comprises a solid substance which can generate a dissociation equilibrium reaction that dissociates at least one type of gas component and at least one type of solid component, and the solid particle is preferably carried by the gas flow in a carrying pipe and the solid particle or the solid component that has adhered to the interior surface of the carrying pipe is removed by the gas flow.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
H01L 21/3213 - Gravure physique ou chimique des couches, p. ex. pour produire une couche avec une configuration donnée à partir d'une couche étendue déposée au préalable
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
89.
Method for producing fluorinated alkane, method for separating and recovering amidine base, and method for using recovered amidine base
Disclosed is a method for purifying a difluorophosphate, the method including mixing a difluorophosphate containing an impurity with at least one treatment agent selected from the group consisting of carbonates, hydroxides, and halides of alkali metals or alkali earth metals and amines to isolate the impurity. It is preferable that the method further include filtering off, by filtration, a salt or a complex that has been formed by allowing the impurity to be mixed with the treatment agent. Preferably, a carbonate, a hydroxide, or a halide of an alkali metal is used as the treatment agent, and more preferably a carbonate, a hydroxide, or a halide of lithium is used as the treatment agent.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
91.
Gas composition for dry etching and dry etching method
A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.
The present invention relates to a method for producing a fluorinated compound represented by formula (2): R2-F (where R2 represents a group obtained by removing a hydroxy group from a hydroxy compound having six or more carbon atoms), the method being characterized by fluorinating a hydroxy compound having six or more carbon atoms by a fluorinating agent represented by formula (1): R1SO2F (where R1 represents a methyl group, an ethyl group, or an aromatic group) in the presence of a base selected from the group consisting of amidine base and phosphazene base.
C07C 17/16 - Préparation d'hydrocarbures halogénés par remplacement par des halogènes de groupes hydroxyle
C07C 19/08 - Composés acycliques saturés contenant des atomes d'halogène contenant du fluor
C07C 21/18 - Composés acycliques non saturés contenant des atomes d'halogène contenant des liaisons doubles carbone-carbone contenant du fluor
C07C 22/00 - Composés cycliques contenant des atomes d'halogène liés à un atome de carbone acyclique
C07C 22/08 - Composés cycliques contenant des atomes d'halogène liés à un atome de carbone acyclique ayant une insaturation dans les cycles contenant des cycles aromatiques à six chaînons contenant du fluor
NATIONAL UNIVERSITY CORPORATION YOKOHAMA NATIONAL UNIVERSITY (Japon)
KANTO DENKA KOGYO CO., LTD. (Japon)
Inventeur(s)
Habuka, Hitoshi
Takahashi, Yoshinao
Fukae, Katsuya
Abrégé
Provided is a method for effectively removing fluorine atoms remaining after cleaning a semiconductor production chamber with chlorine trifluoride. The interior of a semiconductor provided chamber which has been used to produce semiconductors is exposed to chlorine trifluoride, and after removing matter to be removed remaining in the chamber, the interior of the chamber is heat-treated with at least one gas selected from the group consisting of nitrogen, argon, helium and hydrogen. It is preferable that the interior of the chamber is exposed to chlorine trifluoride while measuring the temperature inside the chamber, and that the supply of chlorine trifluoride to the interior of the chamber is stopped if the temperature inside the chamber drops to a preset temperature.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
94.
METHOD FOR PRODUCING PERFLUOROALKYL COMPOUND USING MONOHYDROPERFLUOROALKANE AS STARTING MATERIAL
NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY (Japon)
Inventeur(s)
Amii, Hideki
Komoda, Kazuki
Kobayashi, Masafumi
Nakamura, Yutaka
Obinata, Ryusuke
Harada, Akinori
Abrégé
Provided is a simple method for producing perfluoroalkyl compounds that serve as important intermediates for organic electronic materials, pharmaceuticals, agricultural chemicals, polymer functional materials, etc., the method involving the use of monohydroperfluoroalkanes as a starting material. A base is caused to act on a monohydroperfluoroalkane and a reaction with a carbonyl compound is furthermore carried out, whereby an alcohol having a perfluoroalkyl group is produced. For example, potassium hydroxide is caused to act on trifluoromethane and a reaction with a carbonyl compound is carried out, whereby an alcohol having a trifluoromethyl group is produced.
C07C 29/38 - Préparation de composés comportant des groupes hydroxyle ou O-métal liés à un atome de carbone ne faisant pas partie d'un cycle aromatique à six chaînons par des réactions augmentant le nombre d'atomes de carbone avec formation de groupes hydroxyle, ces groupes pouvant être produits par l'intermédiaire de dérivés de groupes hydroxyle, p. ex. du dérivé O-métal par réactions avec des aldéhydes ou des cétones
C07C 31/125 - Alcools monohydroxyliques acycliques contenant de cinq à vingt-deux atomes de carbone
C07C 33/46 - Alcools non saturés halogénés ne contenant que des cycles aromatiques à six chaînons dans la partie cyclique
C07C 43/23 - Éthers une liaison sur l'oxygène de la fonction éther étant sur un atome de carbone d'un cycle aromatique à six chaînons contenant des groupes hydroxyle ou O-métal
C07C 209/68 - Préparation de composés contenant des groupes amino liés à un squelette carboné à partir d'amines, par des réactions n'impliquant pas de groupes amino, p. ex. réduction d'amines non saturées, aromatisation ou substitution du squelette carboné
C07C 231/12 - Préparation d'amides d'acides carboxyliques par des réactions n'impliquant pas la formation de groupes carboxamide
C07C 233/15 - Amides d'acides carboxyliques ayant des atomes de carbone de groupes carboxamide liés à des atomes d'hydrogène ou à des atomes de carbone acycliques ayant l'atome d'azote d'au moins un des groupes carboxamide lié à un atome de carbone d'un radical hydrocarboné substitué par des atomes d'halogène ou par des groupes nitro ou nitroso avec le radical hydrocarboné substitué lié à l'atome d'azote du groupe carboxamide par un atome de carbone d'un cycle aromatique à six chaînons
95.
MATERIAL, STORAGE CONTAINER USING SAID MATERIAL, VALVE INSTALLED ON SAID STORAGE CONTAINER AS WELL AS CIF STORAGE METHOD AND CIF STORAGE CONTAINER USE METHOD
C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
Provided are a chlorine fluoride supplying device and a chlorine fluoride supplying method which are capable of stably generating chlorine fluoride (ClF) for industrial use, controlling flow rate thereof, and continuously supplying the same. This chlorine fluoride supplying method is a method for supplying chlorine fluoride that is generated by introducing a gas that includes fluorine atoms and a gas that includes chlorine atoms into a flow type heated reactor or a plasma reactor. In this chlorine fluoride supplying method, it is possible to stably generate, as well as safely continue supplying over a long period of time, chlorine fluoride, which due to the difficulties of high pressure filling thereof can only be filled into a gas container such as a cylinder in limited amounts, by reacting two or more types of gas material that can be safely liquefied and filled into a gas container or by reacting similar gas material with a solid material.
The present invention provides a cleaning method which uses a cleaning gas composition for semiconductor production apparatuses, said cleaning gas composition containing, as a main component, a monofluorohalogen compound represented by XF (wherein X represents Cl, Br or I), and provides a method which is capable of removing, with good controllability, an unnecessary film deposited within a processing chamber or a processing container with use of the monofluorohalogen compound without damaging the inside of the processing chamber or the processing container. A cleaning method which is characterized by removing an Si-containing deposit adhering to the inside of a processing chamber or a processing container, which is used for the production of a semiconductor device, after the processing operation by supplying a monofluorohalogen gas represented by XF (wherein X represents Cl, Br or I) into the processing chamber or the processing container. In this cleaning method, the temperature within the processing chamber or the processing container at the time when the monofluorohalogen gas is supplied thereinto is 400°C or higher.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
The purpose of the present invention is to provide a method for easily producing a difluorophosphate using only low-cost starting materials without requiring cumbersome operations. According to the present invention, at least one salt selected from the group consisting of halides, carbonates, borates, phosphates, hydroxides and oxides of an alkali metal, an alkaline earth metal or an onium, at least one phosphorus compound selected from the group consisting of oxychlorides and chlorides of phosphorus, water and hydrogen fluoride are reacted. The above-mentioned purpose is achieved preferably using, as hydrogen fluoride, one substance selected from the group consisting of hydrogen fluoride anhydride, a mixed solution of hydrogen fluoride anhydride and an organic solvent and a mixed gas of hydrogen fluoride anhydride and an inert gas, as a salt used in the reaction, at least one substance selected from the group consisting of halides and carbonates of an alkali metal, and as a phosphorus compound, phosphoryl chloride.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
99.
Nonaqueous electrolyte containing monofluorophosphoric ester salt and nonaqueous secondary battery using same
Provided are a nonaqueous electrolyte for secondary batteries containing an electrolyte having high solubility in ethylene carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, ethyl methyl carbonate, or a like solvent and capable of forming a good-quality film on the positive and the negative electrode interface and a nonaqueous secondary battery having the nonaqueous electrolyte. Specifically, an electrolyte for secondary batteries containing a lithium salt as a solute and a nonaqueous solvent is provided, the nonaqueous solvent containing a monofluorophosphoric ester salt having general formula 1 or 2, in which symbols are as defined in the description.
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
H01M 10/0568 - Matériaux liquides caracterisés par les solutés
Provided is a method for purifying difluorophosphate which includes a step of mixing difluorophosphate containing impurities with at least one type of processing agent selected from the group consisting of a carbonate, hydroxide, or halogenide of an alkaline metal or an alkaline earth metal, and an amine, and separating the impurities. After mixing the impurities with the processing agent to form a salt or a complex, the salt or the complex is preferably filtered out by filtration. As the processing agent, the carbonate, hydroxide, or halogenide of alkaline metal is preferably used, and a carbonate, hydroxide, or halogenide of lithium is more preferably used.
