A micro light-emitting element includes: a micro light-emitting diode (LED) element configured to emit excitation light; and a wavelength conversion portion containing a nano particle configured to absorb the excitation light to emit light having a longer wavelength than the excitation light. The wavelength conversion portion has, on at least a light emitting surface of the wavelength conversion portion, a stack of one or more layers including an oxygen absorption film.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A semiconductor device includes a semiconductor substrate of a first conductivity type, a body region of the first conductivity type, a source region of a second conductivity type, a drain region of the second conductivity type, a gate electrode, a drift region of the second conductivity type, an implanted oxide layer, and a semiconductor region of the first conductivity type. The semiconductor region is formed to extend in a direction along the top face of the semiconductor substrate. A first distance and a second distance are set so that an intensity of 0.35 MV/cm or less is observed in an electric field of a first region including the end portion of the drift region and in an electric field of a second region between the end of the semiconductor region and the drain region.
A beam combining module combines a first beam corresponding to a first wavelength and a second beam corresponding to a second wavelength. The beam combining module includes a collimating lens, a first mirror, and second mirror. The collimating lens is configured to receive the first beam and the second beam that are parallel to each other and to emit the first beam and the second beam in respective non-parallel directions. The first mirror is configured to reflect the first beam emitted by the collimating lens. The second mirror is configured to reflect the second beam emitted by the collimating lens in a direction parallel to the first beam reflected by the first mirror and in such a manner that the second beam emitted by the collimating lens spatially overlaps the first beam reflected by the first mirror.
A light-emitting apparatus includes: a body having an inner space and an opening, the body incorporating at least one semiconductor laser element the body being made of a metal; and a sealing glass member joined to the body, to hermetically seal the inner space. The sealing glass member has a surface adjacent to the body, the surface of the sealing glass member being provided with a base joint layer in a joint region where the sealing glass member and the body are joined together, the base joint layer being made of a metal having a thermal expansion coefficient that falls between a thermal expansion coefficient of the sealing glass member and a thermal expansion coefficient of the metal constituting the body. The sealing glass member is joined to the body with the base joint layer and a solder-containing joint layer interposed between the sealing glass member and the body.
A micro light emitting element includes: a nitride semiconductor layer in which an N-type layer, a light emitting layer, and a P-type layer are stacked. Viewing in a direction perpendicular to a surface of the nitride semiconductor layer, multiple V pits are arranged at positions corresponding to vertexes of a polygon in a one-to-one relation in a region of the nitride semiconductor layer.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
A projector includes: a laser light source; a shaping section configured to shape a laser light emitted from the laser light source; and a scanning section configured to two-dimensionally scan, on a screen, a laser beam shaped by the shaping section. Under a situation where a distance from an optical emitting surface of the laser beam to the screen is constant, the laser light source and the shaping section are configured to perform two-dimensional scanning of the laser beam on the screen by using a tip of the laser beam corresponding to each of cross sections at a plurality of positions of a tapered portion of the laser beam from the scanning section to a beam waist of the laser beam.
An image display element includes pixels, a driving circuit substrate, a microlens, and an inter-pixel partition. The pixels are disposed in an array, each including a micro light emitting element. The driving circuit substrate includes a driving circuit configured to supply a current to the micro light emitting element and cause the micro light emitting element to emit light. The microlens is disposed for each of the pixels. The inter-pixel partition is disposed between the pixels and extends from a light emitting surface of the micro light emitting element to the microlens.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An image display element, provided with a pixel region and a connection region, includes a light-emitting unit and a driving circuit substrate. The light-emitting unit includes a semiconductor layer obtained by layering a second conductive layer, a light-emitting layer, and a first conductive layer, mesa shapes formed by dividing the semiconductor layer, and a step portion separated from the mesa shapes by a groove. A first electrode is connected to the first conductive layer and a first driving electrode. The light-emitting unit further includes, between the mesa shapes adjacent to each other, a wiring line layer forming a conductive path, the wiring line layer being thinner than a layer thickness of a portion of each of the mesa shapes in the semiconductor layer. The wiring line layer extends to a top of the step portion and is connected to a common second electrode provided on the step portion.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
A laser element comprises a substrate; and an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and an electrode layer successively laminated on one principal surface of the substrate, wherein the p-type semiconductor layer includes a ridge raised in a stripe shape, the ridge including a contact layer formed in a layer including a principal surface on a side opposite to the substrate, a stepped portion defined by recessing the contact layer is formed in at least part of a boundary between a lateral surface among surfaces defining outer edges of the ridge, the lateral surface extending along a lengthwise direction of the ridge, and the principal surface of the ridge, and the electrode layer covers the principal surface of the ridge and the stepped portion.
A manufacturing method includes: a step of forming a light-emitting element layer by forming a semiconductor layer, a light-emitting layer, and a semiconductor layer in this order from a side with a first substrate on a surface, of the first substrate, on one side; a step of forming a separation trench in the light-emitting element layer to form a plurality of island shape light-emitting element layers; a step of forming a light shielding layer made of a material different from a material of the light-emitting element layer, in the separation trench; and a step of forming a plurality of light-emitting elements each including a corresponding one of the plurality of island shape light-emitting element layers having a height less than a height of the light shielding layer by etching a portion of the semiconductor layers of each of the plurality of island shape light-emitting element layers.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A semiconductor module comprises an underlayer substrate on which a drive circuit is formed; a light-emitting element electrically coupled to the drive circuit; and a color conversion layer formed on the light-emitting element and containing a color conversion material that absorbs light emitted from the light-emitting element and converts a luminescent color of the light-emitting element to another luminescent color, wherein the color conversion material contained in the color conversion layer is present more on a light-emitting element side of the color conversion layer than on a side opposite to the light-emitting element side of the color conversion layer.
H01L 33/54 - Encapsulations having a particular shape
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
An image display element provides an image display element including a plurality of micro light-emitting elements arrayed in an array manner, and a semiconductor layer at which a drive circuit is disposed, the drive circuit being configured to supply a current to each of the plurality of micro light-emitting elements to cause light to be emitted, in which a transistor that constitutes the drive circuit and a wiring layer are disposed at a first surface of the semiconductor layer, the plurality of micro light-emitting elements are disposed at a second surface of the semiconductor layer that is an opposite side of the first surface, and the transistor and the wiring layer are electrically coupled to the micro light-emitting elements through a through substrate via that extends through the semiconductor layer.
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
13.
Light-emitting device and light-emitting device set
A light-emitting device comprises a casing including an upper surface portion having one or more first through holes, and a front surface portion having an opening; a transparent member that closes off the one or more first through holes; one or more light-emitting elements that face the one or more first through holes, respectively, within the casing; and a lid member provided so as to close off the opening, wherein the casing is integrally formed using one material.
An image display device comprises a drive circuit substrate including a drive circuit that supplies currents to micro light-emitting elements to emit light; and the micro light-emitting elements arranged in an array shape on the drive circuit substrate, wherein a light-distribution control unit that increases forward light emission of the micro light-emitting elements is disposed on a light-emitting surface of each of the micro light-emitting elements, and a partition wall that does not transmit the light emitted by the micro light-emitting elements is disposed around the light-distribution control unit.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/16 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including thermomagnetic components
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
In an image display device, a scattering unit has a size that covers a surface of a red conversion unit on a side that emits light having a second wavelength and a surface of a green conversion unit on a side that emits light having a third wavelength, and faces at most a part of a micro LED element.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
An image display element includes micro light emitting elements disposed in an array on a driving circuit substrate. An excitation light emitting element includes a main body including a compound semiconductor, a metal electrode disposed on a side of the main body located closer to the driving circuit substrate, and a transparent electrode disposed on an opposite side to the driving circuit substrate, and a light emission layer included in the main body is disposed on a side opposite to the driving circuit substrate from a center portion of the main body.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A laser device includes a substrate including a principal surface and a recess provided in the principal surface; a laser oscillation unit fixed to the principal surface in direct contact with the principal surface or with an adhesive interposed between the laser oscillation unit and the principal surface, the laser oscillation unit having an emission surface from which laser light that diverges as the laser light travels is emitted along the principal surface; and a reflecting member fixed to a bottom surface of the recess and having an inclined surface that is inclined with respect to the principal surface so as to reflect the laser light. At least a portion of the inclined surface is positioned in a space inside the recess.
H01S 3/13 - Stabilisation of laser output parameters, e.g. frequency or amplitude
H01S 5/02326 - Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
H01S 5/0236 - Fixing laser chips on mounts using an adhesive
H01S 5/323 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
An image display element includes micro light emitting elements arranged in an array, a drive circuit substrate that includes a drive circuit for supplying a current to the micro light emitting elements to cause light to be emitted, and an antenna arranged on a light emitting surface of each of the micro light emitting elements, in which the antenna includes isolated convex portions.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
A micro light emitting element includes: a body including a compound semiconductor layer in which a first conductive layer, a light emission layer, and a second conductive layer with a conductive type opposite to a conductive type of the first conductive layer are stacked in order from a light emitting surface side; a first electrode including a transparent electrode on the light emitting surface side; a second electrode including a metal film on a side opposite to the light emitting surface side; and a first reflective material covering a side surface of the body. The light emission layer is disposed on the light emitting surface side of the body. The side surface of the body is tapered at an inclination angle to open in a light emitting direction.
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices the devices being of types provided for in two or more different main groups of groups , or in a single subclass of , , e.g. forming hybrid circuits
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
An image display device includes: a plurality of micro light emitting elements arranged in an array shape; a driving circuit substrate including a driving circuit that supplies electric current to the plurality of micro light emitting elements and that causes the plurality of micro light emitting elements to emit light; a plurality of micro lenses in contact with light emitting surfaces of the plurality of micro light emitting elements; and a plurality of partition walls disposed around the plurality of micro lenses in a direction parallel to the light emitting surfaces.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices all the devices being of a type provided for in the same subgroup of groups , or in a single subclass of , , e.g. assemblies of rectifier diodes the devices not having separate containers
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
A light emitting device includes a substrate; a semiconductor light emitting element provided on the substrate; a mirror that is formed on the substrate and reflects light emitted by the semiconductor light emitting element; a first resin disposed apart from the semiconductor light emitting element on an optical path and containing a light diffusing material; and a second resin disposed on the optical path between the semiconductor light emitting element and the low light diffusion portion and covering a light emitting surface of the semiconductor light emitting element at least in a region in which a density of the light is highest. A concentration of a light diffusing material in the second resin is lower than a concentration of the light diffusing material in the first resin.
In a semiconductor laser device, a semiconductor layer includes a first groove formed on both sides of a ridge, a pair of second recesses facing each other and between which the ridge is interposed on a side of a light emitting surface, and a pair of third grooves in parallel to the first groove from the light emitting surface and interposing the ridge therebetween.
H01S 5/10 - Construction or shape of the optical resonator
H01S 5/062 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
23.
Nitride semiconductor laser device and semiconductor laser apparatus
A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.
[Object] Collection efficiency of a reflector that reflects a converted beam, which is converted from a pump beam by a phosphor, and projects the resultant as a projection beam is increased.
[Solution] An optical member (4) of a light source unit (1) deflects a pump beam (PB) so that a first angle of incidence (α1) of a pump beam (PBX) relative to a surface of a phosphor (3) is larger than a second angle of incidence (α2) of the pump beam (PB), which is incident on the optical member (4), relative to the surface of the phosphor (3).
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
F21V 9/35 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material at focal points, e.g. of refractors, lenses, reflectors or arrays of light sources
b of the lens that is opposite to an optical light-emitting surface of the lens is fixed to the adjustment surface with an adhesive AD. A stepped portion that is recessed in the direction of the optical axis L is formed in a bonding portion in which the end surface of the lens and the adjustment surface are bonded together.
A semiconductor laser device includes a semiconductor laser element, a sub mount member, a mount section having an upper surface on which the semiconductor laser element is mounted with the sub mount member interposed therebetween, a lead pin disposed at left and right sides of the mount section, a retainer that retains the mount section and the lead pin together and that is composed of an insulative material, and a protrusion protruding toward the left and right sides of the mount section. A lower surface of the mount section is parallel to an upper surface of the mount section and protrudes from a lower surface of the retainer.
An embodiment of the present invention enables an improvement in image resolution. A projection device (1) includes: a light source (11); a MEMS mirror (14) which reflects and two-dimensionally scans the laser beam emitted from the light source; and a free-form lens (15) which changes focusing properties of the laser beam reflected by the scanning section such that, after propagation of the laser beam to a screen (20) onto which the image is to be projected, a shape of the laser beam when viewed on the screen has a first width that is shorter than a second width of the shape, the first width being along a horizontal direction corresponding to a primary scanning direction in which the MEMS mirror scans the laser beam, the second width being along a vertical direction.
G02B 26/12 - Scanning systems using multifaceted mirrors
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 27/14 - Beam splitting or combining systems operating by reflection only
A light source unit provides enhanced control of a colour shift of white light reflected by a retro-reflector. The light source unit includes a pump light source, which emits laser pump light, a phosphor, which converts the laser pump light into white light, a retro-reflector, which has an output aperture that allows emission of part of the white light, the retro-reflector reflecting another part of the white light back to the phosphor, and scattering particles, which are adjusted to increase a blue light ratio of the white light.
F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
F21V 29/87 - Organic material, e.g. filled polymer composites; Thermo-conductive additives or coatings therefor
F21V 7/22 - Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
In a semiconductor laser device that includes: a semiconductor laser element that outputs light from an output portion; and a metal stem that holds the semiconductor laser element, the metal stem includes a base that has a reference surface on an upper surface and a protrusion portion that protrudes upward from the reference surface, and the protrusion portion is provided with an installation surface on which the semiconductor laser element is installed and a side surface which is disposed on an identical plane with a part of an outer circumferential surface of the base.
H01S 5/02 - Structural details or components not essential to laser action
H01S 5/02212 - Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
H01S 5/323 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/02218 - Material of the housings; Filling of the housings
H01S 5/02208 - Mountings; Housings characterised by the shape of the housings
A semiconductor laser element that includes a stripe-shaped light-emitting region and that is formed by adhering a surface of the semiconductor laser element on a side opposite to a semiconductor substrate and a submount to each other by a solder layer includes a terrace section on a surface of the semiconductor laser element that is adhered by the solder layer, the terrace section being separated from a ridge portion, which is a current-carrying portion, by a grooved portion. A top surface of a region including the grooved portion is covered by a metal. The terrace section is divided into a plurality of portions that are disposed in a scattered manner.
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
In a light projecting apparatus including a laser light source, a light projecting apparatus is divided into a laser-light-source module and a light-projecting optical module. In the laser-light-source module NOR laser beams from a plurality of laser light sources are combined by a beam combiner. The laser-light-source module and the light-projecting optical module are connected to each other by an optical fiber in a cable. A laser beam formed by the beam combiner is transmitted through the optical fiber to the light-projecting optical module, received by a fiber receptacle, and projected. In the laser-light-source module NOR a fiber-breakage countermeasure section that detects breakage of the optical fiber and takes countermeasures against the breakage is disposed.
A semiconductor light-emitting device 10 includes a heat sink and a semiconductor light-emitting element mounted on the heat sink. A gap is provided between a region of a part of a base bottom surface of a base of the semiconductor light-emitting element and an upper surface of the heat sink, and a lead is disposed in a region where the gap is provided so as to vertically pass through the base. A semiconductor laser chip is provided in a region where the gap is not provided so that its waveguide longitudinal direction is substantially parallel to an upper surface of the base. The lead has its lower end located within the gap and connected to a flexible substrate.
H01S 5/323 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/0683 - Stabilisation of laser output parameters by monitoring the optical output parameters
33.
Semiconductor laser device, manufacturing method thereof, and light emitting device
A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.
A light emitting device of the present invention includes a light-emitting section for generating fluorescence by receiving a laser beam, and a light irradiation unit for irradiating a light irradiated surface of the light emitting section with a laser beam that increases regularly in beam diameter in a direction in which the laser beam travels.
F21S 41/176 - Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
F21S 43/16 - Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
B60Q 1/00 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
A nitride semiconductor laser device sequentially includes, between a nitride semiconductor substrate and an n-side cladding layer, a first nitride semiconductor layer formed of an AlGaN layer, a second nitride semiconductor layer that is formed of an AlGaN layer and has a lower Al content than the first nitride semiconductor layer, a third nitride semiconductor layer formed of a GaN layer, a fourth nitride semiconductor layer formed of an InGaN layer, and a fifth nitride semiconductor layer formed of an AlGaN layer.
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
y3P (0≤x3≤1, 0.45≤y3≤0.55). The width of the stripe structure is 10 μm or more, and the refractive index with respect to the laser oscillation wavelength of the first n-type cladding layer is less than or equal to the refractive index with respect to the laser oscillation wavelength of the second n-type cladding layer.
H01S 5/32 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
37.
Light source device and manufacturing method thereof
A housing provided to a light source device has a sliding surface to which a first lens portion is fixed and an inclined support surface to which a second lens portion is fixed. The sliding surface is vertical to a direction of an optical axis of a semiconductor laser and wider than a first fixing surface of the first lens portion that is fixed to the sliding surface. The inclined support surface is parallel to the direction of the optical axis and wider than a second fixing surface of the second lens portion that is fixed to the inclined support surface.
A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.
H01S 5/34 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
39.
Image capture device and biometric authentication device
Image capturing accuracy is improved while a simple optical system is used. An image capture device includes: a polarizing filter that blocks non-transmitted light that has been in polarized light of an infrared ray radiated from a light source and has not been transmitted through an image capturing target and transmitted light that has been in the polarized light and has been transmitted through the image capturing target without diffusion inside the image capturing target, and transmits transmitted light that has been in the polarized light and has been diffused inside the image capturing target and transmitted therethrough; and an image sensor that receives the light that has been transmitted through the polarizing filter and captures an image of the image capturing target.
A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Light emission efficiency is increased in an eye-safe light source by regulating light distribution properties. An eye-safe light source includes a package, a semiconductor laser that emits laser light from a left light emission end surface and a right light emission end surface, and a wire that is joined to the semiconductor laser. The semiconductor laser is joined to the package such that the laser light is emitted parallel to an upper surface of a lead frame of the package. The package includes reflection surfaces that face the left light emission end surface and the right light emission end surface and reflect the laser light. In top view, a direction in which the wire extends is perpendicular to a direction of emission of the laser light.
A laser device includes a light source that emits a source light having a first peak wavelength. A nonlinear optical component performs a frequency conversion process that converts the source light into output light having a second peak wavelength. A stabilization component minimizes a mismatch error constituting a difference between the first peak wavelength and a wavelength for which the frequency conversion process in the nonlinear optical component has a maximum value. The stabilization component may include a housing that is thermally conductive between the light source and the nonlinear optical component to minimize a temperature difference between the light source and the nonlinear optical component. The laser device may include a focusing optical component that focuses the source light to have a convergence half angle that is larger than a convergence half angle that gives maximum output power, thereby increasing an acceptable range of the mismatch error.
H01S 3/109 - Frequency multiplication, e.g. harmonic generation
H01S 3/137 - Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
A light emitting device of the present invention includes a light-emitting section for generating fluorescence by receiving a laser beam, and a light irradiation unit for irradiating a light irradiated surface of the light emitting section with a laser beam that increases regularly in beam diameter in a direction in which the laser beam travels.
F21V 9/16 - Selection of luminescent materials for light screens
F21S 41/176 - Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
F21S 43/16 - Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
B60Q 1/00 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
A light beam separating and absorbing element includes a mirror that receives first and second light beams incident on a first surface, and the mirror is configured to transmit the first light beam and reflect the second light beam. A beam absorber receives the first light beam transmitted through the mirror, and absorbs a first light portion of the transmitted first light beam after the first light beam has been transmitted through the mirror. The beam absorber scatters a second portion of the first light beam, and the beam absorber and mirror are positioned such that at least a portion of the scattered light is incident on a second surface of the mirror. Transmissivity of the mirror for the scattered light incident on the second mirror surface may be lower as compared to transmissivity for the first light beam incident on the first mirror surface to enhance separation of the first and second light beams.
A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
46.
Light source configured for stabilization relative to external operating conditions
A laser device includes a light source that emits a source light having a first peak wavelength. A nonlinear optical component performs a frequency conversion process that converts the source light into output light having a second peak wavelength. A stabilization component minimizes a mismatch error constituting a difference between the first peak wavelength and a wavelength for which the frequency conversion process in the nonlinear optical component has a maximum value. The stabilization component may include a housing that is thermally conductive between the light source and the nonlinear optical component to minimize a temperature difference between the light source and the nonlinear optical component. The laser device may include a focusing optical component that focuses the source light to have a convergence half angle that is larger than a convergence half angle that gives maximum output power, thereby increasing an acceptable range of the mismatch error.
H01S 3/08 - Construction or shape of optical resonators or components thereof
H01S 3/137 - Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
In a light emitting section, a phosphor layer including a first phosphor particle which receives excitation light and emits fluorescence with a first peak wavelength and a phosphor layer including a second phosphor particle which receives the excitation light and emits fluorescence with a second peak wavelength are stacked. In the light emitting section, when an upper surface is a surface from which illumination light is mostly emitted, the illumination light including the fluorescence emitted from the first phosphor particle and the fluorescence emitted from the second phosphor particle, a reflective member to reduce leakage of fluorescence is provided on a side surface of the light emitting section.
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
F21K 9/60 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
A light-emitting device includes a light-emitting portion that emits fluorescence in response to excitation light incident on a surface of the light-emitting portion, and a reflector that defines a light-emitting region on the surface of the light-emitting portion, the fluorescence being emitted from the light-emitting region. The excitation light has a top-hat energy intensity distribution on the surface of the light-emitting portion.
F21V 9/30 - Elements containing photoluminescent material distinct from or spaced from the light source
G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
F21K 9/61 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
F21S 41/20 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by refractors, transparent cover plates, light guides or filters
A semiconductor laser element is provided with: a substrate formed of a semiconductor; a semiconductor laminated film, which is laminated on the substrate, and which includes an active layer; a first electrode and a second electrode, which are provided on surfaces parallel to the active layer on the side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on both the facets, which are perpendicular to the active layer, and which face each other. In the semiconductor laser element, the facet is used as a fixing surface for the semiconductor laser element, said facet having the facet protection film formed thereon.
H01S 5/323 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
G02F 1/355 - Non-linear optics characterised by the materials used
An optical guide member (104) includes an optical guide section having an exit end surface (Rx1) including a side a, and an imaging lens (105) forms, on a front surface of a light emitting section (101), an image of the side a in an image of excitation light (L1) on the exit end surface (Rx1).
A light emitting device of the present disclosure includes a light emitting section that generates fluorescence by receiving laser light, a reflection film that reflects laser light which is radiated to the vicinity of the light emitting section, among laser light which is emitted toward the light emitting section from a rod lens, and a reflection mirror that collects the laser light reflected by the reflection film, in the light emitting section.
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
F21K 99/00 - Subject matter not provided for in other groups of this subclass
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
F21K 9/61 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
A light projection apparatus that can produce an elongate light projection pattern is provided. The light projection apparatus includes a fluorescent member which is excited with exciting light and a light projecting member which reflects or transmits the light emanating from the fluorescent member to project it outside. The fluorescent member includes an irradiated region which is irradiated with the exciting light, and the length of the irradiated region in a first direction is greater than its length in a second direction.
A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
57.
Illuminating apparatus, vehicle headlamp and control system of vehicle headlamp
An illuminating apparatus includes a first light source that emits blue laser light, a light emitting section that emits light by being irradiated with the blue laser light, a second light source that emits green laser light, a biaxial MEMS scanner that irradiates a part of the light emitting section with the green laser light, and a convex lens that projects the light emitted from the light emitting section to the outside.
G02B 6/00 - Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
F21S 41/14 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
F21S 41/675 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on reflectors by moving reflectors
2 film) having a thickness in the range of 1 to 13 nm, and a tapered DBR end portion (a slope having a taper angle in the range of 15 to 45 degrees) is formed by vapor deposition in a lift-off process. The high-refractive-index thin film is overlaid with a reflective metal film 8D serving as a first layer.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.
H01L 31/0328 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
A light projecting device of the present invention includes: a light source unit including (i) a laser element for emitting light, (ii) a light converging lens for converging the light emitted from the laser element, and (iii) a light emitting section for emitting light upon receipt of the light converged by the light converging lens; and a reflector for projecting light emitted from the light source unit. The light source unit is provided so as to be attached to or detached from a fixed part to which the light source unit is to be fixed.
A light-projecting device according to the present invention includes a plurality of light source units including (i) a light emitting section that emits light upon receiving a laser beam and (ii) a reflector. Each of the light source units project light to a corresponding one of light-projected spots which is a region to which light is projected in an illuminated region in a partitioning manner, and the illuminated region is formed by combining a plurality of the light-projected spot.
B60Q 1/04 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights
B60Q 1/00 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
B60Q 11/00 - Arrangement of monitoring devices for devices provided for in groups
F21Y 101/02 - Miniature, e.g. light emitting diodes (LED)
62.
Nitride semiconductor light-emitting device and method for producing the same
A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H01L 29/22 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
In a light emitting section, a phosphor layer including a first phosphor particle which receives excitation light and emits fluorescence with a first peak wavelength and a phosphor layer including a second phosphor particle which receives the excitation light and emits fluorescence with a second peak wavelength are stacked. In the light emitting section, when an upper surface is a surface from which illumination light is mostly emitted, the illumination light including the fluorescence emitted from the first phosphor particle and the fluorescence emitted from the second phosphor particle, a reflective member to reduce leakage of fluorescence is provided on a side surface of the light emitting section.
A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width ω (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width ω (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25° C. and light output P (80) at 80° C. with a same operating current is 95% or more.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
67.
Light emitting device, illumination device, and vehicle headlamp
An illumination device 1 which is a light emitting device capable of emitting white light, includes: a laser element 2 for emitting a blue laser beam; a light emitting section 4 for generating fluorescence by be being irradiated with the blue laser beam emitted from the laser element 2; and a parabolic mirror 5 for reflecting the fluorescence generated from the light emitting section 4, the parabolic mirror 5 being disposed on an irradiated surface side which irradiated surface is a surface of the light emitting section 4 which surface is irradiated with the blue laser beam. This allows the illumination device 1 to efficiently project the white illumination light.
B60Q 1/28 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating front of vehicle
F21Y 101/02 - Miniature, e.g. light emitting diodes (LED)
F21V 29/74 - Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
F21V 29/00 - Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
68.
Light-emitting unit with optical plate reflecting excitation light and transmitting fluorescent light, and light-emitting device, illumination device, and vehicle headlight including the unit
A light-emitting unit according to the present invention includes: a fluorescent section for emitting light upon irradiation with a laser beam; and a wavelength selection filter being provided so as to face the fluorescent section. The wavelength selection filter reflects the laser beam toward the fluorescent section and transmits fluorescence emitted from the fluorescent section.
A lighting apparatus is provided that, while suppressing an increase in size, can change the illuminating direction. The lighting apparatus has: a laser generator which emits laser light; a light emitting member which is irradiated with the laser light emitted from the laser generator to emit light; an irradiated position changer which moves and thereafter stops an irradiated position at which the light emitting member is irradiated with the laser light; and a light projecting member which projects the light emitted from the light emitting member.
F21V 13/00 - Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups
F21V 13/04 - Combinations of only two kinds of elements the elements being reflectors and refractors
F21Y 101/02 - Miniature, e.g. light emitting diodes (LED)
A light-emitting device includes a light-emitting portion that emits fluorescence in response to excitation light incident on a surface of the light-emitting portion, and a reflector that defines a light-emitting region on the surface of the light-emitting portion, the fluorescence being emitted from the light-emitting region. The excitation light has a top-hat energy intensity distribution on the surface of the light-emitting portion.
A headlamp disclosed includes: a laser diode for emitting a laser beam; a light emitting section including a fluorescent material which emits light in response to excitation light emitted from the laser diode; a light-transmitting heat conducting member which is provided so as to face a laser beam irradiation surface of the light emitting section and receive heat of the light emitting section; and an adhesive layer filling a gap between the heat conducting member and the laser beam irradiation surface. This arrangement improves efficiency of the heat conducting member in absorbing the heat of the light emitting section, and consequently cools the light emitting section efficiently.
Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each contain A1, the average A1 composition of the p-type nitride semiconductor layer 1 is equivalent to the average A1 composition of the p-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3 has a smaller band gap than the p-type nitride semiconductor layer 2, the p-type impurity concentration of the p-type nitride semiconductor layer 2 and the p-type impurity concentration of the p-type nitride semiconductor layer 3 are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1, and a method for producing same.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
A lighting apparatus is provided that, while suppressing an increase in size, can change the illuminating direction. The lighting apparatus has: a laser generator which emits laser light; a light emitting member which is irradiated with the laser light emitted from the laser generator to emit light; an irradiated position changer which moves and thereafter stops an irradiated position at which the light emitting member is irradiated with the laser light; and a light projecting member which projects the light emitted from the light emitting member.
F21V 13/04 - Combinations of only two kinds of elements the elements being reflectors and refractors
F21V 13/00 - Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups
Provided is a lighting device that can suppress decrease in its luminous efficiency and shortening of its life. A lighting device (1) includes a fluorescent member (4) which is irradiated with laser light emitted by a semiconductor laser (2) and emits fluorescent light, a rotation mechanism (6) which rotates the fluorescent member, and a reflecting member (7) which reflects the fluorescent light emitted by the fluorescent member toward the outside.
F21V 14/08 - Controlling the distribution of the light emitted by adjustment of elements by movement of screens
F21V 29/02 - Cooling by forcing air over or around the light source (cooling arrangements structurally associated with electric lamps H01J 61/52, H01K 1/58)
F21V 9/16 - Selection of luminescent materials for light screens
F21V 29/70 - Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
A light-emitting section (2) and a transparent member (1) which is arranged on a side of a surface (SUF2) of the light-emitting section (2) and exhibits transparency with respect to laser light (L) are provided, and the transparent member (1) includes a plurality of scattering microregions (MP) which isotropically scatter the laser light (L) passing therethrough and increase a light-emission spot size of the laser light (L).
F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
Method of producing a nitride semiconductor crystal with precursor containing carbon and oxygen, and nitride semiconductor crystal and semiconductor device made by the method
A method of producing a nitride semiconductor crystal uses a metal organic chemical vapor deposition process and offers good controllability with respect to a p-type nitride semiconductor crystal. To that end, an organic metal compound of a group III element, a hydride of nitrogen, and an organic compound having any of the partial structures C—C—O, C—C═O, C═C—O, C═C═O, C≡C—O, and C—O—C are used as source materials, and by a metal organic chemical vapor deposition process, C and O atoms are simultaneously introduced into the crystal to obtain p-type conductivity.
H01L 29/207 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes characterised by the deposition of metallic material from metallo-organic compounds
Provided is an illumination device capable of reducing coherence of laser light emitted from a laser irradiation device to ensure safety to the eye at low cost. In the illumination device for exciting a fluorescent substance by irradiating the fluorescent substance with the laser light from the laser irradiation device to emit visible light for use as illumination light, a light scattering material is placed on and around an optical axis of the laser light.
F21V 9/16 - Selection of luminescent materials for light screens
B60Q 1/04 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights
F21V 9/00 - Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
F21S 8/04 - Lighting devices intended for fixed installation intended only for mounting on a ceiling or like overhead structure
G02B 6/42 - Coupling light guides with opto-electronic elements
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
C03C 14/00 - Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
F21Y 101/02 - Miniature, e.g. light emitting diodes (LED)
A light projecting device of the present invention includes: a light source unit including (i) a laser element for emitting light, (ii) a light converging lens for converging the light emitted from the laser element, and (iii) a light emitting section for emitting light upon receipt of the light converged by the light converging lens; and a reflector for projecting light emitted from the light source unit. The light source unit is provided so as to be attached to or detached from a fixed part to which the light source unit is to be fixed.
A light-emitting device includes a plurality of laser elements, a light-emitting section for emitting light in response to a laser beam, and an emission control section for controlling whether each of the plurality of laser elements emits light or not. At least a part of the plurality of laser elements is positioned in such a manner that irradiation regions of the light-emitting section are positioned at least partially differently.
F21V 7/06 - Optical design with parabolic curvature
H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups
B60Q 1/14 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights having dimming means
B60Q 1/08 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights adjustable, e.g. remotely-controlled from inside vehicle automatically
F21V 9/00 - Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
F21V 13/14 - Combinations of only three kinds of elements the elements being filters or photoluminescent elements, reflectors and refractors
F21Y 101/02 - Miniature, e.g. light emitting diodes (LED)
A light-emitting device includes a light-emitting section, a lens, and a movement control section, the movement control section changing an illumination position and a spot size of a laser beam in the light-emitting section by changing a relative position of the lens with respect to the light-emitting section.
A light projection device that can change a light projection pattern is provided. The light projection device includes: a plurality of excitation light sources that emit excitation light; a fluorescent member that is excited by the excitation light from the excitation light sources; a control portion that controls outputs of the excitation light sources; and a light projection member that projects light emitted from the fluorescent member. The fluorescent member includes a plurality of application regions to which the excitation light is applied, and the control portion controls the outputs of the excitation light sources so as to individually control the excitation states of the application regions.
B60Q 1/04 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights
F21V 9/16 - Selection of luminescent materials for light screens
F21V 13/12 - Combinations of only three kinds of elements
B60Q 1/00 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
B60Q 1/08 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights adjustable, e.g. remotely-controlled from inside vehicle automatically
B60Q 1/34 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to indicate the vehicle, or parts thereof, or to give signals, to other traffic for indicating change of drive direction
A headlamp (1) includes a light-emitting section (4) which emits fluorescence upon receiving excitation light from a laser element (2). Energy intensity distribution of the excitation light, which is received by the light-emitting section (4), is a top-hat distribution.
G01S 1/00 - Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith
G09B 9/00 - Simulators for teaching or training purposes
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H01S 3/30 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
H01J 5/16 - Optical or photographic arrangements structurally combined with the vessel
H01P 5/00 - Coupling devices of the waveguide type
B60Q 1/12 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor the devices being primarily intended to illuminate the way ahead or to illuminate other areas of way or environments the devices being headlights adjustable, e.g. remotely-controlled from inside vehicle automatically due to steering position
F21V 9/16 - Selection of luminescent materials for light screens
F21S 41/12 - Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of emitted light
A method of manufacturing a nitride semiconductor device includes the step of forming a second nitride semiconductor layer having an inclined facet by metal-organic chemical vapor deposition, in which a molar flow ratio of a group V element gas to a group III element gas that are supplied to a growth chamber of a metal-organic chemical vapor deposition growth apparatus is set at 240 or less.
H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
88.
Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device, and method of manufacturing nitride semiconductor light-emitting element
A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting element, a package substrate and an optically transparent resin sealing portion. The nitride semiconductor light-emitting element includes a substrate, a nitride semiconductor multilayer portion having a light-emitting layer and a protective layer. The nitride semiconductor multilayer portion is provided on the substrate. The protective layer is provided on an upper portion of the nitride semiconductor multilayer portion. The resin sealing portion seals the nitride semiconductor light-emitting element that is mounted on the package substrate. An air gap layer is formed in at least one of an area between the substrate and the light-emitting layer in the nitride semiconductor light-emitting element, an area between the light-emitting layer and the protective layer in the nitride semiconductor light-emitting element and an area in the package substrate.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
89.
Light source device, lighting device, vehicular headlight, and vehicle
A headlight system in accordance with the present invention includes: a semiconductor laser element that emits laser light; a light-emitting section that upon receipt of the laser light emitted from the semiconductor laser element, emits illumination light which is both the laser light and fluorescence obtained by wavelength conversion of a portion of the laser light; and a diffusion plate that mixes the laser light and fluorescence which are contained in the illumination light emitted by the light-emitting section.
In a head lamp 1, relative positions of a laser light guide path in a tapered light guide section 20 and a parabolic mirror 5 are fixed. An optical fiber 10 and the tapered light guide section 20 are each provided so as to have a receiving end part where laser light is received and an emitting end part where laser light is emitted. The emitting end part of the optical fiber 10 is located near the receiving end part of the tapered light guide section 20.
A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.
A headlight of the present invention includes: a fluorescent material light-emitting section; a reflector that reflects light emitted from the fluorescent material light-emitting section so as to emit reflected light out of the headlight; and a mini-mirror that reflects, toward a predetermined surface of the fluorescent material light-emitting section provided substantially at a focal point of the reflector, at least part of light that has not been directed toward the reflector. The mini-mirror has its optical axis inclined with respect to a normal line of the predetermined surface.
A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
94.
Nitride semiconductor light-emitting device and method for producing the same
A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 31/072 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each contain Al, the average Al composition of the p-type nitride semiconductor layer 1 is equivalent to the average Al composition of the p-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3 has a smaller band gap than the p-type nitride semiconductor layer 2, the p-type impurity concentration of the p-type nitride semiconductor layer 2 and the p-type impurity concentration of the p-type nitride semiconductor layer 3 are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1, and a method for producing same.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
97.
Light projection apparatus, light condensing unit, and light emitting apparatus
A light projection apparatus that can produce an elongate light projection pattern is provided. The light projection apparatus includes a fluorescent member which is excited with exciting light and a light projecting member which reflects or transmits the light emanating from the fluorescent member to project it outside. The fluorescent member includes an irradiated region which is irradiated with the exciting light, and the length of the irradiated region in a first direction is greater than its length in a second direction.
Provided is a functional element which is obtained by forming a lamination film on a substrate and then dividing the substrate and the lamination film into a desired shape. The functional element has a hexagonal substrate, a lamination film formed on a C surface of the substrate, and a plurality of divided surfaces which are exposed by dividing the substrate into quadrilaterals. At least one line of division lines in the case of dividing the substrate into quadrilaterals is perpendicular to any one of equivalent directions of [1-100], [−1010], and [01-01] of the substrate from a [0001] direction of the substrate, and the divided surfaces formed by the division lines are inclined in a direction of other divided surfaces to which at least a part thereof is opposed.
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 31/0312 - Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
99.
Light projection unit and light projection apparatus
A light projection unit capable of improving light use efficiency is provided. This light projection unit includes: a fluorescent member that includes an illuminated surface to which laser light is directed, converts at least part of the laser light into fluorescent light and outputs the fluorescent light from chiefly the illuminated surface; and a reflection member that includes a first reflection surface which reflects the fluorescent light output from the fluorescent member. The illuminated surface of the fluorescent member is inclined with respect to a predetermined direction in such a way that the illuminated surface faces in a direction opposite to a light projection direction.
A light projection unit is provided that can reduce the production of a portion where the light density is excessively increased on a fluorescent member. This light projection unit includes: a light collection member that includes a light entrance surface and a light emission surface which has an area smaller than that of the light entrance surface; a fluorescent member that includes an application surface to which the laser light emitted from the light collection member is applied and that mainly emits fluorescent light from the application surface; and a light projection member that projects the fluorescent light. The light emission surface of the light collection member is arranged a predetermined distance from the application surface of the fluorescent member.
B60Q 1/00 - Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor
B60Q 3/00 - Arrangement of lighting devices for vehicle interiors; Lighting devices specially adapted for vehicle interiors
F21V 9/16 - Selection of luminescent materials for light screens
G02B 27/20 - Optical systems or apparatus not provided for by any of the groups , for optical projection, e.g. combination of mirror and condenser and objective for imaging minute objects, e.g. light-pointer
G01S 1/00 - Beacons or beacon systems transmitting signals having a characteristic or characteristics capable of being detected by non-directional receivers and defining directions, positions, or position lines fixed relatively to the beacon transmitters; Receivers co-operating therewith
G09B 9/00 - Simulators for teaching or training purposes
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H01S 3/30 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
F21V 9/00 - Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave
H01S 5/22 - Structure or shape of the semiconductor body to guide the optical wave having a ridge or a stripe structure
H01S 5/343 - Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
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