The present invention provides a method for producing a recycled polyol, the method comprising (a) a step for preparing a polyurethane pulverized product by pulverizing waste polyurethane, (b) a step for adding an amine compound and polyether polyol to the polyurethane pulverized product and producing a decomposition product of polyurethane by a decomposition reaction, and c) a step for cooling and filtering the decomposition product of polyurethane.
C08J 11/28 - Recovery or working-up of waste materials of polymers by chemically breaking down the molecular chains of polymers or breaking of crosslinks, e.g. devulcanisation by treatment with organic material by treatment with organic compounds containing nitrogen, sulfur or phosphorus
C08J 11/24 - Recovery or working-up of waste materials of polymers by chemically breaking down the molecular chains of polymers or breaking of crosslinks, e.g. devulcanisation by treatment with organic material by treatment with organic oxygen-containing compounds containing hydroxyl groups
2.
METHOD FOR MANUFACTURING POLISHING PAD WINDOW, AND POLISHING PAD WINDOW MANUFACTURED THEREBY
A method for manufacturing a window for a polishing pad is disclosed. The method includes: a) mixing a curing agent with a polyurethane prepolymer having a temperature of 50° C. or higher to less than 100° C. to prepare a mixture; b) injecting the mixture into a mold heated to a temperature of 30° C. or higher to less than 100° C. to a thickness of 5 mm or less; c) demolding a polyurethane cured product from the mold; and d) processing the polyurethane cured product to a thickness of the window of the polishing pad. A polishing pad including the window is also disclosed.
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Min, Byung Ju
Hong, Seok Ji
Kim, Seung Geun
Choi, Jung Hee
Kang, Min Woo
Oh, Nam Gue
Kim, Sanha
Jeong, Ji Hun
Ryu, Hyun Jun
Kang, Sukkyung
Kim, Seong Jae
Abstract
A composite polishing pad for chemical mechanical polishing (CMP) and a method for producing the composite CMP. The composite polishing pad for CMP contains a polymer substrate layer including a plurality of protrusions formed on the upper surface thereof; and a carbon nanotube layer including carbon nanotubes embedded in and fixed to the upper portion of the substrate layer.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B29C 41/00 - Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
B29C 41/02 - Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
B29C 41/42 - Removing articles from moulds, cores or other substrates
B29C 41/50 - Shaping under special conditions, e.g. vacuum
B29C 59/00 - Surface shaping, e.g. embossing; Apparatus therefor
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Min, Byung Ju
Hong, Seok Ji
Kim, Seung Geun
Choi, Jung Hee
Kang, Min Woo
Oh, Nam Gue
Kim, Sanha
Jeong, Ji Hun
Ryu, Hyun Jun
Kang, Sukkyung
Kim, Seong Jae
Abstract
The present invention provides a composite polishing pad for CMP, and a method for producing the same. The composite polishing pad for CMP comprises: a soft polymer substrate layer including a plurality of protrusions formed on the upper surface thereof; a carbon nanotube layer including carbon nanotubes embedded in and bound to the upper portion of the substrate layer; and a hard polymer coating layer having the carbon nanotubes protruding outwardly on the upper portion of the carbon nanotube layer embedded and bound thereto.
The present specification relates to polyester polyol, method for producing same, method for producing polyurethane using the method, polyurethane, and insulation material, polyester polyol comprising a first unit derived from a carboxylic acid compound represented by chemical formula 1, and a second unit derived from an aliphatic diol compound.
The present specification relates to polyurethane foam, a method for producing same, and insulation material comprising same, the value indicated by equation 1 for the polyurethane foam being 0.119 or greater.
Disclosed are a polishing pad equipped with a window and a method for manufacturing same, wherein, in the process of inserting and attaching a window into a polishing pad, no thermal melting/bonding scheme and no vibration melting/bonding scheme are applied such that the polishing pad is not deformed, and no polishing slurry leaks through a gap between the window and the polishing pad. The polishing pad equipped with a window comprises: a polishing layer having a first bored hole formed in the thickness direction; a window inserted/fixed into the first bored hole of the polishing layer; a lower support layer positioned below the polishing layer and the window, the lower support layer having a second bored hole formed on the lower end of the window so as to have a width smaller than that of the first bored hole or the window such that an optical beam is emitted therethrough; an attachment layer for mediating attachment between the polishing layer and the lower support layer, the adhesive layer having the same area as the lower support layer such that the adhesive layer partially overlaps a peripheral portion of the window and does not contact same; and a sealing attachment member positioned between the window and the attachment layer.
B24B 37/20 - Lapping pads for working plane surfaces
B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24D 11/00 - Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
8.
SUB-PAD FOR POLISHING PAD, POLISHING PAD INCLUDING SAME, AND METHOD FOR MANUFACTURING SUB-PAD FOR POLISHING PAD
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Min, Byung Ju
Kim, Seung Geun
Kang, Min Woo
Oh, Nam Gue
Kim, San Ha
Jeong, Ji Hun
Eom, Youn Sick
Abstract
The present invention provides a sub-pad for a polishing pad, a polishing pad including same, and a method for manufacturing the sub-pad for a polishing pad, the sub-pad being stacked under a top pad that contacts and polishes a wafer and including a nanofiber non-woven fabric pad, wherein the nanofiber density of an outer circumferential part of the nanofiber non-woven fabric pad is 1.2-5 times that of another part inside the outer circumferential part.
The present invention provides a method for manufacturing a polishing pad window, a polishing pad window manufactured by the method, and a polishing pad including the window, the method comprising the steps of: a) producing a mixture by mixing a curing agent and a polyurethane prepolymer having a temperature of at least 50°C but not more than 100°C; b) injecting the mixture, to a thickness of 5 mm or less, into a mold heated to a temperature of at least 30°C but not more than 100°C; c) demolding a polyurethane cured product from the mold; and d) processing the polyurethane cured product to the thickness of a window of a polishing pad.
The present invention provides a double-sided adhesive tape for adhering a polishing pad, and a chemical-mechanical polishing apparatus using the adhesive tape, the adhesive tape comprising: an upper release film layer; a first adhesive layer; an adhesive tape substrate laminated on the lower surface of the first adhesive layer; a second adhesive layer laminated on the lower surface of the adhesive tape substrate; and a bubble discharge pattern-forming sheet layer laminated on the lower surface of the second adhesive layer and including a bubble discharge pattern formed as a protruding line on the laminated surface.
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Min, Byung Ju
Hong, Seok Ji
Kim, Seung Geun
Choi, Jung Hee
Kang, Min Woo
Oh, Nam Gue
Kim, San Ha
Jeong, Ji Hun
Ryu, Hyun Jun
Kang, Suk Kyung
Kim, Seong Jae
Abstract
The present invention provides a composite polishing pad for CMP, and a method for producing same. The composite polishing pad for CMP comprises: a polymer substrate layer including a plurality of protrusions formed on the upper surface thereof; and a carbon nanotube layer including carbon nanotubes embedded in and fixed to the upper surface of the substrate layer.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B24B 37/22 - Lapping pads for working plane surfaces characterised by a multi-layered structure
B24D 11/00 - Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
B29C 33/42 - SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING - Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
B29C 33/44 - SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING - Details thereof or accessories therefor with means for, or specially constructed to facilitate, the removal of articles, e.g. of undercut articles
12.
COMPOSITE POLISHING PAD INCLUDING HIGHLY ABRASION-RESISTANT THIN FILM COATING BOUND WITH CARBON NANOTUBES, AND METHOD FOR PRODUCING SAME
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Republic of Korea)
Inventor
Min, Byung Ju
Hong, Seok Ji
Kim, Seung Geun
Choi, Jung Hee
Kang, Min Woo
Oh, Nam Gue
Kim, San Ha
Jeong, Ji Hun
Ryu, Hyun Jun
Kang, Suk Kyung
Kim, Seong Jae
Abstract
The present invention provides a composite polishing pad for CMP, and a method for producing same. The composite polishing pad for CMP comprises: a soft polymer substrate layer including a plurality of protrusions formed on the upper surface thereof; a carbon nanotube layer including carbon nanotubes embedded in and bound to the upper portion of the substrate layer; and a hard polymer coating layer in which carbon nanotubes protruding outwardly are embedded in and bound to the upper portion of the carbon nanotube layer.
A photoresist-removing composition includes a polar organic solvent, an alkyl ammonium hydroxide, an aliphatic amine not including a hydroxy group, and a monovalent alcohol. To manufacture a semiconductor device, a photoresist pattern may be formed on a substrate, and the photoresist-removing composition may then be applied to the photoresist pattern. To manufacture a semiconductor package, a photoresist pattern including a plurality of via holes may be formed on a substrate. A plurality of conductive posts including a metal may be formed inside the plurality of via holes, and the photoresist pattern may be removed by applying a photoresist-removing composition of the inventive concept to the photoresist pattern. A semiconductor chip may be adhered to the substrate between the respective conductive posts.
01 - Chemical and biological materials for industrial, scientific and agricultural use
Goods & Services
Polyols; unprocessed polyurethane; ethyl carbamate; ethyl
urethane; unprocessed polyurethane resins; unprocessed
plastics for use in the manufacture of polyurethane;
industrial chemicals for use in the manufacture of
polyurethane; polyurethane adhesives for construction
purposes; chemicals for use in the manufacture of adhesives;
isocyanate; chemicals for use in the processing of plastics;
glycerine for industrial purposes; surfactants for
industrial purposes; non-ionic surfactants for use in
manufacture; polyvinyl alcohol resins; unprocessed
artificial resins and pulp; unprocessed synthetic resins for
use in the manufacture of plastic moulding compounds;
polyurethane adhesives; thermally curable unprocessed
synthetic resins; unprocessed artificial resins for use in
manufacture.
A method of manufacturing a polishing pad includes producing an urethane prepolymer having a viscosity of 20,000 cps (at 25° C.) to 40,000 cps (at 25° C.) by mixing a plurality of polymers, mixing the urethane prepolymer with an inert gas and a low-boiling blowing agent having a boiling point of 60° C. to 150° C., and manufacturing a polishing layer including porous pores by causing a mixture produced at the mixing to be subjected to gelation and curing in a predetermined cast.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
C08J 9/06 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent
B29C 44/34 - Component parts, details or accessories; Auxiliary operations
B29C 44/56 - After-treatment of articles, e.g. for altering the shape
B29C 69/00 - Combinations of shaping techniques not provided for in a single one of main groups , e.g. associations of moulding and joining techniques; Apparatus therefor
C08G 18/76 - Polyisocyanates or polyisothiocyanates cyclic aromatic
C08J 9/12 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent
C08J 9/14 - Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a physical blowing agent organic
C08G 18/12 - Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step using two or more compounds having active hydrogen in the first polymerisation step
B29K 75/00 - Use of polyureas or polyurethanes as moulding material
According to the present invention, a method for manufacturing a polishing pad comprises the steps of: mixing a plurality of polymers so as to generate a urethane prepolymer having a viscosity of 20,000 cps (25°C) to 40,000 cps (25°C); mixing, in the urethane prepolymer, an inert gas and a low-boiling point foaming agent of which the boiling point is 60°C-150°C; and gelling and hardening the generated mixture in a predetermined mold so as to manufacture a polishing layer including porous pores.
The present invention relates to a composition for a synthetic resin sleeper and a method for preparing the same, and more specifically, to a composition for a synthetic resin sleeper which comprises a polyol mixture, isocyanate, a natural reinforcing agent, a silicon foam stabilizer, a foaming agent, and a catalyst, the polyol mixture containing: 1) 40-80 wt% of polyether polyol having functionality of not less than three but less than four; 2) 15-45 wt% of polyether polyol having functionality of not less than four but less than five; 3) 5-20 wt% of polyether polyol having functionality of not less than five but not more than six; and 4) 2-15 wt% of polyester polyol having functionality of two, the polyol mixture having a viscosity of 500-2000 cps (25℃), the natural reinforcing agent including a fiber type or a fabric type, thereby enhancing mechanical strength in an eco-friendly and semi-permanent manner and facilitating the processability and maintenance, and to a method for preparing the same.
E01B 3/44 - Transverse or longitudinal sleepers; Other means resting directly on the ballastway for supporting rails made from other materials only if the material is essential
B21K 7/06 - Making railway appurtenances; Making vehicle parts parts for permanent way sleepers
According to the present invention, the method for manufacturing a polishing pad by mixing a polishing layer forming material and solidifying the material through a chemical reaction includes: a step of forming micro organic particles by pulverizing an organic material using a physical method; a step of mixing the micro organic particles formed in the above step with the polishing layer forming material; a step of forming gaseous pores by mixing the mixture obtained in the above step with a pore size-controllable inert gas, a capsule-type foaming agent, or a chemical foaming agent; a step of producing a polishing layer by gelating and curing the mixture obtained in the above step; and a step of distributing the pores through the opening of the gaseous pores on a surface by processing the polishing layer.
B24D 11/00 - Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
B24D 3/16 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings for close grained structure, i.e. of high density
The method for manufacturing a polishing pad according to the present invention includes the steps of: mixing materials for forming a polishing layer; forming at least two types of pores by mixing the mixture of the above step with at least two of an inert gas, a capsule type foaming agent, a chemical foaming agent, and a liquid state differential element, each of which has a controllable pore size; manufacturing a polishing layer which includes at least two types of pores by gelating or hardening the mixture which is produced through the above steps; and a step of processing the polishing layer so as to distribute the pores of at least two types on the surface by opening up the pores.
B24D 3/10 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic for porous or cellular structure, e.g. for use with diamonds as abrasives
Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.
Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group.
A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.
C09K 13/08 - Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
C09K 13/00 - Etching, surface-brightening or pickling compositions
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
24.
Composition for etching silicon oxide and method of forming a contact hole using the same
In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
