The present invention provides an admittance testing method for a resonator and a resonator. The testing method comprises the following steps: acquiring a scattering parameter matrix file of a resonator to be tested; constructing an equivalent circuit of a real resonator on the basis of the scattering parameter matrix file, the real resonator having parasitic effects incorporated therein; deriving equations of scattering parameters of the real resonator on the basis of the equivalent circuit; and calculating admittance parameters of the real resonator by means of the equations, for designing the real resonator. In the present invention, the admittance testing method for the resonator has low costs, and is capable of acquiring more accurate admittance parameters.
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
The present invention relates to the technical field of wireless communications. Provided are a load transformer and a differential amplifier. The load transformer comprises a first metal layer, a second metal layer, a third metal layer and a fourth metal layer which are sequentially stacked, wherein the first metal layer, the second metal layer, the third metal layer and the fourth metal layer are spaced apart from each other and arranged asymmetrically; the first metal layer is an annular first coil layer; the second metal layer is an annular second coil layer; the third metal layer is an annular third coil layer; and the fourth metal layer is a ground layer. The load transformer further comprises a first substrate dielectric layer, a second substrate dielectric layer and a third substrate dielectric layer, wherein the first substrate dielectric layer is arranged between the first metal layer and the second metal layer; the second substrate dielectric layer is arranged between the second metal layer and the third metal layer; and the third substrate dielectric layer is arranged between the third metal layer and the fourth metal layer. The load transformer of the present invention has a small area and low cost, thereby facilitating an improvement in the utilization rate of a substrate.
The present invention relates to a packaging reliability optimization method and system based on position optimization, and a related device. The method designs a packaging scheme by randomly arranging chips on a substrate, and calculates the stress variances of solder balls by means of modeling of the chips, the substrate and the solder balls, so as to optimize the packaging scheme. In this way, the stress of the solder balls during chip packaging can be averaged as much as possible, thereby improving the reliability of chip packaging; in addition, by means of the method, automated processing is easily implemented, thereby being conducive to improving the working efficiency of chip packaging design and manufacturing process.
A linear voltage regulator and a radio-frequency power amplifier. The linear voltage regulator comprises a current source generation circuit, an enhancement circuit and a linear voltage-stabilizing circuit, wherein the current source generation circuit is used for generating a fixed current source, the enhancement circuit is used for enabling the linear voltage regulator to generate a voltage overshoot during transient settling, and the linear voltage-stabilizing circuit is used for generating a stable regulation voltage. After the linear voltage regulator is applied to a radio-frequency power amplifier, the linear voltage regulator can generate a voltage overshoot at a turn-on moment of the radio-frequency power amplifier, which is equivalent to improving a bias voltage of the radio-frequency power amplifier at the turn-on moment, so as to achieve the effect of improving the linearity of the radio-frequency power amplifier, thereby meeting the requirements of the radio-frequency power amplifier for the linearity at the turn-on moment.
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
5.
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND LOW-NOISE AMPLIFICATION MODULE
Provided in the present utility model are an electrostatic discharge protection circuit and a low-noise amplification module. The electrostatic discharge protection circuit is applied to a low-noise amplification circuit, and the low-noise amplification circuit comprises an input matching circuit and a low-noise amplifier connected to an output end of the input matching circuit. The electrostatic discharge protection circuit comprises an inductor and a resistor, wherein a first end of the inductor is used for connecting to a signal input end of the low noise amplifier; and a first end of the resistor is connected to a second end of the inductor, and a second end of the resistor is grounded. In the present utility model, after the electrostatic discharge protection circuit is connected to an input end of a low-noise amplifier, a noise coefficient of the low-noise amplifier is not deteriorated, the performance of the low-noise amplifier is also not affected; moreover, the input stability of the low-noise amplifier is also not affected.
Provided in the present utility model are a low-noise amplifier and a radio-frequency power amplifier module. The low-noise amplifier comprises an input matching circuit, a first capacitor, a first power amplifier, a first resistor, a first switch, a second capacitor, a first inductor, a second switch, a second resistor, a second power amplifier, a third capacitor, a third switch, a third resistor, a second inductor, a fourth capacitor and an output matching circuit. By means of the low-noise amplifier in the present utility model, not only can the number of devices required by a bypass-mode circuit be reduced, so as to facilitate the wiring of the low-noise amplifier and improve the flexibility of the wiring thereof, but the equivalent ground capacitance of all devices on a bypass mode node can also be adsorbed by means of an output matching circuit, so as to reduce the impact on the performance of the low-noise amplifier.
The present invention relates to a method and system for acquiring dissipated power of a radio frequency device, and a related device. The method comprises: acquiring respective scattering parameters of all circuit elements in a circuit of a radio frequency device; connecting the respective scattering parameters of all the circuit elements to obtain an overall scattering parameter of the radio frequency device; acquiring an incident wave vector of each of the circuit elements; on the basis of the overall scattering parameter and the incident wave vector of each of the circuit elements, acquiring an outgoing power vector corresponding to each of the circuit elements; and using connection relationships among all the circuit elements to construct a transmission matrix based on corresponding outgoing power vectors, and calculating dissipated power of the radio frequency device by means of the transmission matrix. In the present invention, scattering parameters are used as data sources for acquiring dissipated power, facilitating the implementation of automated processing and helping improve the efficiency of radio frequency device design.
A radio frequency power amplifier circuit having a harmonic suppression function, and a radio frequency chip. The radio frequency power amplifier circuit comprises an input matching unit, a first-stage power amplifier unit, a first-stage bias unit, a first-stage power supply unit, an inter-stage matching unit, a second-stage power amplifier unit, a second-stage bias unit, a second-stage power supply unit, and an output matching unit. LC-type trap circuits are designed and used in both the power supply units and the inter-stage matching unit, thereby achieving suppression of the second-, third- and higher-order harmonics in the radio frequency power amplifier circuit. In addition, on the basis of LC circuit structures in the power supply units and the inter-stage matching unit, the bandwidth of inter-stage matching is further broadened, thereby improving the linearity of multi-stage power amplifier units.
The present invention relates to a power amplifier output matching circuit and a radio frequency power amplification circuit. The power amplifier output matching circuit comprises a high-order harmonic suppression module, a second harmonic suppression module, and an output matching module. In the circuit structure provided by the present invention, the output matching module can match the impedance provided to a power amplifier to an appropriate test impedance to meet the bandwidth requirements, and the second harmonic component is suppressed by means of an improved structure formed by the second harmonic suppression module and the high-order harmonic suppression module, and the requirement for high-order harmonic suppression is met at the same time, thereby improving the fundamental impedance point position of the power amplifier and improving the performance of the power amplifier.
A power combining circuit and a power amplifier. The power combining circuit comprises a first signal input end, a second signal input end, an input impedance matching circuit, a first harmonic suppression circuit, a second harmonic suppression circuit, a first high-pass filter circuit, a second high-pass filter circuit, a low-pass filter circuit, and a signal combining output end; the low-pass filter circuit comprises a first inductor, a second inductor, and a first capacitor; a first end of the first inductor serves as a first input end of the low-pass filter circuit, a first end of the second inductor serves as a second input end of the low-pass filter circuit, a second end of the first inductor is separately connected to a first end of the first capacitor and a second end of the second inductor and serves as an output end of the low-pass filter circuit, and a second end of the first capacitor is grounded. The power combining circuit has impedance transformation characteristics, and also has advantages such as low costs, high isolation, and high integration.
Provided are a radio frequency power amplifier and a radio frequency chip. An input end of an input matching circuit (1) is used for receiving a radio frequency signal; an output end of the input matching circuit (1) is connected to an input end of a power amplifier (3); a first end of a filter circuit (4) is connected to an external power supply voltage; an output end of the power amplifier (3) is separately connected to a second end of the filter circuit (4), a first end of a notch filter circuit (5), and an input end of a strongly coupled transformer (6); a second end of the notch filter circuit (5) is grounded; an output end of the strongly coupled transformer (6) is used for outputting the radio frequency signal; a first end of a high-order notch filter circuit (7) is connected to the output end of the strongly coupled transformer (6); and a second end of the high-order notch filter circuit (7) is grounded. The present utility model reduces the radio frequency matching area, and saves the space and cost of the radio frequency power amplifier. In addition, by means of the structural design of the strongly coupled transformer, the efficiency and performance of the radio frequency power amplifier are improved.
A low-noise amplifier and a radio frequency chip. The low-noise amplifier comprises an input matching circuit, a power amplification circuit and an output matching circuit which are electrically connected in sequence. The power amplification circuit comprises a first MOS transistor and a second MOS transistor, wherein a gate of the first MOS transistor is connected to an output end of the input matching circuit, serving as an input end of the power amplification circuit, a source of the first MOS transistor is grounded, a drain of the first MOS transistor is connected to a source of the second MOS transistor, and a drain of the second MOS transistor is connected to an input end of the output matching circuit, serving as an output end of the power amplification circuit. The low-noise amplifier further comprises an inductor switching circuit capable of combining to achieve different inductance values, wherein the source of the first MOS transistor is grounded after being connected in series with the inductor switching circuit. The low-noise amplifier can realize switching among multiple inductance values of a source inductor, providing greater flexibility in balancing various metrics in a low-gain mode.
A radio frequency power amplifier and a radio frequency chip. The radio frequency power amplifier comprises an amplifier (1), a first adjustable attenuation circuit (2), a second adjustable attenuation circuit (3), and a first capacitor (C1). Compared with the prior art, by adding the first adjustable attenuation circuit (2) and the second adjustable attenuation circuit (3) at an input terminal of the amplifier (1) and adopting a simple circuit structure, input attenuation protection is achieved; and fewer devices are used, so that the chip area cost can be effectively saved. Moreover, the input attenuation amounts of the first adjustable attenuation circuit (2) and the second adjustable attenuation circuit (3) can be flexibly adjusted by means of a digital control bit and an analog control voltage, thereby achieving free adjustment of different attenuation amounts at different temperatures. In addition, the input terminal of the amplifier (1) has a simple structure, so that complex feedback loop control is avoided, the response speed is faster, and the radio frequency performance of an amplifier path is less deteriorated.
The present invention is applicable to the technical field of wireless communications, and particularly relates to a low noise amplifier and a radio frequency chip. The low noise amplifier comprises an input matching circuit, a bias circuit, an amplification circuit, an output matching circuit, an attenuator, and an anti-distortion gain suppression circuit. Compared with the prior art, in the present invention, by adding an anti-distortion gain suppression circuit capable of preventing distortion caused by excessive waveform amplitude to the connection between a first MOS transistor and a second MOS transistor of an amplification circuit, since the anti-distortion gain suppression circuit can effectively mitigate the linearity deterioration problem in an amplifier chain of a chip caused by excessive waveform amplitude, the low-noise amplifier can output a radio frequency signal having better linearity.
The present invention relates to a radio frequency front-end module heat dissipation optimization method and system, and a related device. The method comprises: acquiring a layout of a power amplifier in a radio frequency front-end module; continuously dividing the layout into a plurality of temperature zones on the basis of the thermal performance of the power amplifier; acquiring original spacings between transistors in the power amplifier; re-acquiring optimized transistor spacings between transistors in different temperature zones on the basis of the original spacings; performing re-layout of the transistors of the power amplifier on the basis of the optimized transistor spacings to obtain an optimized layout; and acquiring a heat-dissipation-optimized radio frequency front-end module on the basis of the optimized layout. In the present invention, by adjusting the layout of the transistors in the power amplifier, the spacing between transistors having higher heat generation is increased, which is beneficial to improving the radio frequency performance of the radio frequency front-end module.
The present invention is applicable to the technical field of wireless communications, and particularly relates to a microwave network connection method and system, and a related device. The method of the present invention comprises: on the basis of whether port attributes are equipotential, dividing a first sparse block diagonal matrix into four sub-matrices, so as to obtain a second sparse block diagonal matrix comprising the four sub-matrices; acquiring a transfer matrix used for representing power distribution of the equipotential ports of microwave networks to be connected; and, on the basis of a preset rule, performing computation on the transfer matrix and the second sparse block diagonal matrix, so as to obtain a scattering parameter matrix; and, by means of the scattering parameter matrix, connecting the plurality of microwave networks to be connected. Compared with the prior art, the present invention involves dividing a sparse block diagonal matrix into four smaller sub-matrices, which have lower computation time complexity, thus significantly reducing computation time and improving computational efficiency during computation, thereby improving the efficiency of microwave network connection.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
The present invention provides a bidirectional coupler and a radio frequency chip. The bidirectional coupler comprises a main line, a coupling line located on one side of the main line and coupled to the main line, an input port formed by bending and extending one end of the main line in a direction away from the coupling line, an antenna port formed by bending and extending the other end of the main line in the direction away from the coupling line, a coupling port and an isolation port respectively formed at two ends of the coupling line, an adjustable resistor having a first end connected to the isolation port, and an adjustable capacitor having a first end connected to the isolation port. The bidirectional coupler in the present invention can achieve high isolation, by means of high flatness over a full frequency band, can maintain stable performance even if impedance mismatch is caused by temperature changes, and can also reduce the size and cost of the bidirectional coupler.
H01P 5/18 - Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
Provided are a coupler and a radio frequency chip. The coupler comprises a first microstrip line, and a second microstrip line coupled to the first microstrip line, two ends of the first microstrip line being respectively provided with a radio frequency input port and an antenna output port, and two ends of the second microstrip line being respectively provided with an isolation port and a coupling output port. The coupler further comprises a first resonant circuit, a second resonant circuit and a first resistor, the first resonant circuit, the second resonant circuit and the first resistor being used for optimizing the isolation and directivity of the coupler. Compared with the prior art, the provided coupler has high isolation, good directivity and lower power fluctuation. On the basis of the original design of the coupler, resonant loops are directly added to to widen the frequency range. Using microstrip lines as basic structures involves low cost, and exhibits high isolation, high directivity and low power fluctuation in the case of low design complexity.
The present invention provides a radio frequency front-end module. The radio frequency front-end module comprises a power amplifier, a single-pole double-throw radio frequency switch, a low-noise amplifier, a first single-pole single-throw radio frequency switch, a coupler, a double-pole double-throw radio frequency switch, a radio frequency amplifier, a second single-pole single-throw radio frequency switch, a detector, and an operational amplifier. In the present invention, when the processing capability of an upper computer is weak, or when commands between the upper computer and the radio frequency front-end module are incompatible, the signal receiving capability of the radio frequency front-end module can be improved, so that switching between a receiving bypass channel and a low-noise amplifier channel can be promptly implemented. In addition, the complexity of transmit power control is effectively reduced, radiation is reduced, energy consumption is reduced, and the service life of the radio frequency front-end module is prolonged.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
The present invention relates to the technical field of wireless communications, and provides a low-noise amplifier and a radio frequency chip. The low-noise amplifier comprises a common port input selection module, a first amplifier module, a second amplifier module, a first input switch module, a second input switch module, a first output matching module, and a second output matching module; an input end of the common port input selection module is used for receiving a radio frequency signal, and an output end of the common port input selection module is used for controlling the first amplifier module and/or the second amplifier module to selectively output a signal, thereby achieving different gain adjustment control of the outputted signal; the first amplifier module and the second amplifier module are used for performing signal amplification; the first output matching module and the second output matching module are used for output matching; the first input switch module and the second input switch module are used for receiving inputted signals. The low-noise amplifier of the present invention can achieve good radio frequency performance and performance indexes.
The present invention provides a radio frequency transceiver module, comprising: an input matching circuit, a power amplification circuit, an output matching circuit, a transmit/receive switching switch, a filter bank, an antenna switch, and an antenna. The output matching circuit comprises a first transformer, a first capacitor, a first inductor, and a plurality of second capacitors having different capacitance values. The first transformer comprises a first primary coil and a first secondary coil coupled to each other. The filter bank comprises a plurality of filters, and input terminals of the plurality of filters are connected in one-to-one correspondence to a plurality of second terminals of the transmit/receive switching switch, respectively. The transmit/receive switching switch is used to control each second capacitor to be separately connected to or disconnected from a corresponding filter in the filter bank. In the radio frequency transceiver module of the present invention, after a different radio frequency channel is turned on, the power amplification circuit can achieve optimal performance in the turned-on radio frequency channel, thereby improving the performance of the power amplification circuit.
The present invention provides a radio frequency transceiver circuit, comprising: an input matching circuit, a power amplification circuit, an output matching circuit, a transmit/receive switching switch, a filter bank, an antenna switch, and an antenna. The output matching circuit comprises a first capacitor, a first inductor, a second inductor, a plurality of second capacitors having different capacitance values, a third inductor, and a plurality of third capacitors having different capacitance values. The filter bank comprises a plurality of filters, and input terminals of the plurality of filters are connected in one-to-one correspondence to a plurality of second terminals of the transmit/receive switching switch, respectively. The transmit/receive switching switch is used to control each second capacitor and each third capacitor to be separately connected to or disconnected from a corresponding filter in the filter bank. The radio frequency transceiver circuit in the present invention enables both the performance of the power amplification circuit and harmonic suppression to meet requirements.
The present invention relates to the technical field of wireless communications, and provides a common-input low noise amplifier and a radio frequency chip. The common-input low noise amplifier comprises a common input port selection module, a first amplifier module, a second amplifier module, a first input switch module, a second input switch module, a first output matching module, and a second output matching module. An input end of the common input port selection module is used for receiving a control signal, and an output end of the common input port selection module is used for controlling selection of signal output either to an input end of the first amplifier module or to the second amplifier module; an input end of the first input switch module is used for receiving a first input signal, and an output end of the first input switch module is used for connecting the input end of the first amplifier module; and an input end of the second input switch module is used for receiving a second input signal, and an output end of the second input switch module is used for connecting an input end of the second amplifier module. The low noise amplifier in the present invention can improve radio frequency performance and performance specifications.
The present utility model provides an electrostatic protection circuit and a radio frequency front-end chip. The electrostatic protection circuit comprises multiple stages of clamping circuits and a resistor, the multiple stages of clamping circuits being sequentially connected and having a multi-stage stacked structure. Each stage of the clamping circuits comprises a first field-effect transistor, a second field-effect transistor, a capacitor, a drive circuit, a third field-effect transistor, and a diode. A first terminal of the resistor is connected to a power supply to be protected, and a second terminal of the resistor is connected to a second terminal of the capacitor in a first stage of the clamping circuits. The electrostatic protection circuit in the present utility model has improved discharge capability, shortens the turn-on time of a trigger circuit, and enhances an electrostatic discharge resistance effect while maintaining the same layout area of the radio frequency front-end chip.
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H10D 89/60 - Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
The present invention relates to the technical field of wireless communications, and provides a high-linearity low-noise amplifier, comprising an input selection module, a first amplifier circuit module, a second amplifier circuit module, a first linear regulation network, a second linear regulation network, a first output matching regulation module, and a second output matching regulation module. The input selection module comprises a first switch, a second switch, a third switch, a first capacitor, and a second capacitor; a control end of the first switch is used as an input end of the input selection module; an output end of the first switch is configured to be connected to a control end of the second switch or a control end of the third switch on the basis of a received first control signal; an output end of the second switch is grounded; a second output end of the first switch is separately connected to the control end of the third switch and a first end of the second capacitor; and an output end of the third switch is grounded. The high-linearity low-noise amplifier of the present invention can achieve good power consumption, NF and linearity in different gain levels.
The present invention relates to the technical field of wireless communications. Provided are a gain-adjustable low-noise amplifier and a radio-frequency chip. The gain-adjustable low-noise amplifier comprises a common input switching module, a first amplifier module, a second amplifier module, a first output matching module, a second output matching module, a first control module and a second control module, wherein an input end of the common input switching module is used for receiving a radio-frequency signal, and an output end of the common input switching module is used for respectively switching the radio-frequency signal to the first amplifier module or the second amplifier module on the basis of the first control module or the second control module; the first amplifier module and the second amplifier module respectively amplify the radio-frequency signal, and respectively output same by means of the first output matching module and the second output matching module; and the first control module is used for controlling the connection and disconnection of the first amplifier module to the ground, and the second control module is used for controlling the connection and disconnection of the second amplifier module to the ground. The present invention can achieve good isolation between input ports and favorable performance.
A wave trap optimization method and system, and a related device. The method comprises: acquiring a circuit structure and circuit parameters of a wave trap to be optimized, and determining optimization indexes (S1); on the basis of the circuit structure and the corresponding circuit parameters, calculating a resonator performance parameter and a matching circuit performance parameter (S2); on the basis of a preset resonator adjustment method, adding, to the circuit structure, a resonator for constituting the wave trap, so as to obtain a new first optimized circuit structure (S4); on the basis of a preset matching circuit adjustment method, adding, to the first optimized circuit structure, a matching circuit for constituting the wave trap, so as to obtain a new second optimized circuit structure (S7); and on the basis of the second optimized circuit structure and the corresponding circuit parameters, using a first preset optimization method to perform optimization, so as to obtain an optimized circuit of the wave trap (S9).
An RF front-end module and an RF chip are provided. The RF front-end module includes a signal input end, an input matching circuit, an amplification circuit, an output matching circuit, a signal output end, and a bias circuit. A first end of the bias circuit is configured to be connected to a power supply, a second end of the bias circuit is configured to be connected to an external logic control circuit, and a third end of the bias circuit is configured to output a bias current to an input end of the amplification circuit. The external logic control circuit is configured to control on/off of the amplification circuit. The bias circuit includes a current mirror circuit, a first triode, a second triode, a third triode, a first resistor, a second resistor, and a third resistor. IIP3 performance of the RF front-end module is excellent.
The present invention is applicable to the technical field of radio frequency, and particularly to a radio frequency front-end module and a radio frequency chip. The radio frequency front-end module comprises a substrate, and a first die and a second die that are arranged on the substrate; the first die is electrically connected to the second die; the first die is provided with a bias circuit, and the bias circuit is used for providing a bias voltage; the second die is provided with an amplification circuit and a temperature compensation circuit, the amplification circuit is used for performing amplification processing on a received signal, and the temperature compensation circuit is used for performing compensation processing on an error caused by temperature; a first end of the bias circuit is used for receiving an enable signal, and a second end of the bias circuit is electrically connected to a first end of the temperature compensation circuit; a first end of the amplification circuit is used for receiving an external logic control signal, and a second end of the amplification circuit is connected to a second end of the temperature compensation circuit. Compared with the prior art, the present invention effectively reduces the complexity of the radio frequency front-end module and the radio frequency chip in realizing transmission power control, reduces radiation, reduce the energy consumption, and prolongs the service life.
The present invention relates to the technical field of wireless communications. Provided are a radio frequency front-end module and a radio frequency chip. The radio frequency front-end module comprises a substrate, and a first die, a second die and a third die, which are arranged on the substrate, wherein a power amplifier circuit is arranged on the first die and is configured to amplify transmitted radio frequency signals; a first voltage conversion circuit is arranged on the second die and is configured to convert a power supply into a preset voltage and then output the preset voltage to the first die to provide power; a control module is arranged on the third die and is configured to process the amplified signals output by the power amplifier circuit and output corresponding control signals to perform switching; an output end of the control module is configured to control the switching between different radio frequency signals to a signal receiving end; an input end of the first voltage conversion circuit is configured to connect to the power supply; and the first voltage conversion circuit is configured to convert the power supply into an operating voltage and output same to the power amplifier circuit. The radio frequency front-end module of the present invention can improve reliability and the effect of switching between transmitted and received signals.
H04B 1/48 - Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
The present invention provides a radio frequency power amplifier and a radio frequency power amplifier module. The radio frequency power amplifier comprises a signal input end, an input matching circuit, a power amplification circuit, an output matching circuit, a signal output end, and a bias circuit. The bias circuit comprises a first triode, a second triode, a third triode, a first resistor, a second resistor, a first capacitor, a first field effect transistor, a second field effect transistor, and a third capacitor. In the present invention, a new bias circuit is designed, so that the gain of the radio frequency power amplifier does not decrease as temperature increases.
The present utility model relates to a power-amplifier output standing wave alarm circuit, and a radio-frequency module. The power-amplifier output standing wave alarm circuit comprises a power amplifier, a switch control circuit, a controller, and a coupling circuit, wherein an input end of the power amplifier is used for connecting a radio-frequency signal, and an output end thereof is connected to a control end of the switch control circuit and outputs a radio-frequency amplified signal to the switch control circuit; the switch control circuit is used for switching the radio-frequency amplified signal to different paths and outputting same; the coupling circuit comprises a coupler and a processing circuit, the coupler being used for acquiring the radio-frequency amplified signal, and the processing circuit being used for processing the radio-frequency amplified signal to obtain a determination signal; and an input end of the controller is connected to the coupling circuit, an output end of the controller is connected to the power amplifier, and the controller is used for receiving the determination signal and controlling, on the basis of the determination signal, the power amplifier to turn on and off. The present utility model has the technical effects of standing-wave anomaly detection and the protection of a power amplifier.
The present invention provides an optimization method for impedance matching and a surface acoustic wave filter. The optimization method comprises the following steps: step S1, obtaining corresponding scattering parameter information, and screening the scattering parameter information on the basis of a set frequency range; step S2, determining an impedance matching circuit that needs to be added for each port; step S3, by taking the reflection circle radius of a scattering parameter of each port as a first optimization objective, performing optimization to obtain a first optimization result of each port; step S4, by taking the first optimization result of each port as an initial value and taking maximum insertion within the set frequency range and the reflection circle radius of the scattering parameter of each port as second optimization objectives, performing optimization again to obtain a second optimization result; and step S5, evaluating the second optimization result. The optimization method of the present invention can improve the optimization speed, reduce the likelihood of optimization falling into a local optimum, and accelerate the convergence speed.
The present invention relates to the technical field of wireless communications. Disclosed are a surface acoustic wave device model coefficient extraction and simulation method and apparatus, and a related device. The method comprises the following steps: step S1, acquiring admittance parameters of a batch of surface acoustic wave devices; step S2, removing abnormal waveforms and random noise in measured curves by means of a filtering and noise reduction algorithm, so as to obtain true values of the measured curves; step S3, searching for feature information in the measured curves by using a moving window of a preset size in combination with a preset limiting condition; step S4, on the basis of a feature change relationship between the coefficient of a phenomenological model and each of the conductance of a conductance curve and the susceptance of a susceptance curve, sequentially optimizing all model coefficients step by step; and step S5, using a neural network model to develop a simulation method for surface acoustic wave devices within a preset structural dimension range and obtain a simulation result. The surface acoustic wave device model coefficient extraction and simulation method of the present invention can improve the accuracy of surface acoustic wave device simulation.
Provided in the present invention are a scattering parameter thermal coupling method and system, and a related apparatus. The method comprises: constructing a three-dimensional equivalent heat transfer model for a target device; acquiring an ambient thermal resistance of the target device on the basis of the three-dimensional equivalent heat transfer model; acquiring a scattering matrix Si of each element; coupling a temperature drift coefficient of the device with scattering matrices to obtain coupled scattering matrices Si'; performing electrical connection on the basis of connection modes of different elements in the device, so as to obtain an electrical model; coupling the electrical model with the ambient thermal resistance by means of a corresponding dissipation power, so as to establish a power model; calculating a temperature corresponding to each coupled scattering matrix Si'; on the basis of the temperature, adjusting the scattering matrix Si by using a preset adjustment method, so as to obtain an adjusted matrix Si''; and determining whether Si'' minus Si' is equal to 0, and if Si'' minus Si' is equal to 0, outputting the power model as a scattering parameter thermal coupling result. The present method more closely aligns with test conditions of actual devices, resulting in more accurate temperature drift prediction results.
The present invention is applicable to the technical field of wireless communications, and particularly relates to an interdigital transducer and a preparation method therefor, and a surface acoustic wave filter. The preparation method comprises the following steps: performing two rounds of photoresist spin-coating and two rounds of a hard-baking treatment on a wafer, performing an exposure treatment, developer spin-coating and a film deposition treatment, and stripping a photoresist, so as to obtain an interdigital transducer. Compared with the prior art, in the present invention, two layers of photoresist are applied to a wafer, wherein the physical properties of the two layers of photoresist are different, such that in a subsequent developer spin-coating process, the remaining structure of the upper layer of photoresist is larger than that of the lower layer of photoresist, thereby forming a T-shaped-like photoresist structure. Therefore, when film deposition is performed on the wafer, a gap is formed between a metal film and the lower layer of photoresist, thereby effectively preventing the photoresist from adhering to the periphery of the metal film, which causes incomplete stripping, and thus the electrical performance and reliability of an interdigital transducer and a surface acoustic wave filter thereof are effectively improved.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
An edge contraction technique-based circuit preprocessing method and system, and a device. The method comprises: on the basis of an original equivalent circuit, constructing a circuit connection list about connection relationships between different circuit elements therein (S1); traversing the circuit connection list, performing mergeability determination on different connection relationships on the basis of an edge contraction method, and reordering the connection relationships in the circuit connection list to obtain an ordered circuit connection list (S2); traversing the ordered circuit connection list, performing mergeability determination on different connection relationships on the basis of the edge contraction method, and merging the connection relationships in the ordered circuit connection list to obtain a merged circuit connection list (S3); and connecting different circuit elements on the basis of the merged circuit connection list, to obtain a simplified equivalent circuit (S4). The edge contraction technique-based circuit preprocessing method reduces the calculation time of a circuit scattering parameter matrix.
The present invention relates to the technical field of wireless communications. Disclosed in the present invention is a power amplifier. The power amplifier comprises a signal input end, a radio frequency amplifier and a signal output end which are electrically connected in sequence, and an average power tracking circuit. An input end of the average power tracking circuit is used for connecting a power supply and receiving an output signal of an external host computer, an output end of the average power tracking circuit is connected to an input end of a radio frequency amplifier, and the average power tracking circuit is used for converting, on the basis of a received target voltage value, a power supply voltage output by the power supply into a preset voltage to supply power to the radio frequency amplifier. The average power tracking circuit comprises a voltage conversion circuit, a comparator, a loop filter circuit, a PWM modulator, a voltage divider circuit, a pulse circuit, and a first inductor. By switching the characteristics of the loop filter, the present invention enables the power supply to achieve both fast establishment and high-precision output, thereby allowing a working voltage of the amplifier to be as low as possible, and further reducing power consumption of the power amplifier.
The present invention provides a filter and a fabrication method therefor, the method comprising the steps of: S1, fabricating an acoustic layer on one side of a piezoelectric wafer; S2, depositing and forming a dielectric layer on the side of the piezoelectric wafer close to the acoustic layer; S3, planarizing the dielectric layer; S4, using photoresist to perform first protective bonding on the planarized dielectric layer corresponding to a low-frequency functional area or a high-frequency functional area; S5, performing first frequency trimming on the dielectric layer corresponding to the functional area in which first protective bonding is not performed; S6, using photoresist to perform second protective bonding on the dielectric layer corresponding to the functional area in which first frequency trimming was performed; and S7, performing second frequency trimming on the dielectric layer corresponding to the functional area in which second protective bonding is not performed. The resulting filter fabricated by means of the described method can meet the thickness requirements of different dielectric layers, thereby allowing each frequency band thereof to achieve better performance.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
The present invention is applicable to the technical field of semiconductor processes, and particularly relates to a manufacturing method for a laterally excited bulk acoustic wave filter, and a radio-frequency module. The manufacturing method uses the respective excellent characteristics of silicon-based glass and photosensitive glass so as to obtain crystallized glass as a sacrificial layer by means of exposing and annealing the photosensitive glass during manufacturing, thereby implementing pattern transfer. This process does not involve cavity lithography, etching or coating, thus reduces process steps, thereby reducing difficulty and costs, and improving the yield and structural stability of a filter; in addition, crystallized glass and uncrystallized photosensitive glass have high etching selectivity and extremely low parasitic resistance and capacitance, so that cavity etching can be simply and accurately controlled so as to obtain an ideal cavity structure, and device insertion loss can be reduced to improve the overall performance of the filter.
H03H 3/04 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
Provided in the present invention are a filter and a preparation method therefor. The method comprises the steps of: S1, preparing an acoustic layer on one side of a piezoelectric wafer; S2, depositing a dielectric layer on the side of the piezoelectric wafer that is close to the acoustic layer; S3, performing a first instance of planarization on the dielectric layer; S4, using a photoresist to affix and protect a low-frequency functional area portion that corresponds to the dielectric layer; S5, performing frequency trimming on a high-frequency functional area portion that corresponds to the dielectric layer; S6, using the photoresist to affix and protect the high-frequency functional area portion that corresponds to the dielectric layer; S7, performing a second instance of planarization on the dielectric layer that corresponds to the low-frequency functional area portion; and S8, cleaning off all the photoresist to obtain a filter. The filter prepared by means of the method can meet thickness requirements for different dielectric layers, so that each frequency band thereof can achieve optimal performance.
H03H 3/10 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
Provided in the present invention is a notch filter. The notch filter comprises a signal input end, first laterally excited bulk acoustic wave resonators connected in series with the signal input end, resonator assemblies connected in parallel to the first laterally excited bulk acoustic wave resonators, and a signal output end connected in series with the first laterally excited bulk acoustic wave resonators, wherein each resonator assembly comprises two second laterally excited bulk acoustic wave resonators that are respectively grounded; a first laterally excited bulk acoustic wave resonator is connected between two second laterally excited bulk acoustic wave resonators in a resonator assembly, and the three laterally excited bulk acoustic wave resonators are jointly arranged in a T shape; and the resonant frequency of each first laterally excited bulk acoustic wave resonator is less than the resonant frequency of each second laterally excited bulk acoustic wave resonator. In the present invention, by means of designing first laterally excited bulk acoustic wave resonators that are connected in series and resonator assemblies that are connected in parallel, a notch filter for realizing high-frequency, high-degree-of-suppression and large-bandwidth filtering is obtained.
The present invention relates to the technical field of wireless communications. Provided are an impedance circuit self-matching optimization method and system, and a related device. The method comprises the following steps: S1, reading an SNP file of a filter and generating corresponding port networks and operating frequency bands; S2, performing circuit pre-estimation optimization on each port network, and recording optimization results of all the port networks; S3, perform screening on each port network on the basis of a preset rule, so as to obtain a plurality of screening results; S4, assembling overall matching circuits on the basis of the plurality of screening results, and obtaining a plurality of circuit optimization results; and S5, screening the plurality of circuit optimization results to obtain an optimal matching circuit. The impedance circuit self-matching optimization method in the present invention can improve the optimization efficiency of a SAW matching circuit and the operating electrical performance of a SAW.
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
44.
RADIO FREQUENCY FRONT-END MODULE AND RADIO FREQUENCY CHIP
The present invention relates to the technical field of wireless communications. Disclosed in the present invention is a radio frequency front-end module, comprising a signal input end, an input matching circuit, an amplification circuit, an output matching circuit, and a signal output end which are electrically connected in sequence. The radio frequency front-end module further comprises a bias circuit, wherein a first end of the bias circuit is used for connecting to a power supply, a second end of the bias circuit is used for connecting to an external logic control circuit, and a third end of the bias circuit is used for outputting a bias current to an input end of the amplification circuit; the external logic control circuit is used for controlling on-off of the amplification circuit; and the bias circuit comprises a current mirror circuit, a first transistor , a second transistor , a third transistor , a first resistor, a second resistor, and a third resistor. The present invention can improve the IIP3 performance of the entire radio frequency front-end module.
The present invention is applicable to the technical field of piezoelectric simulation, particularly relates to a temperature characteristic iterative simulation method and system for an elastic wave device, and a related device. The temperature characteristic iterative simulation method for an elastic wave device provided by the present invention takes into consideration the impact of self-heating of the elastic wave device on the device performance as well as the heat transfer condition of the environment where the device is located, and achieves full coupling of solid mechanics, static electricity and a heat transfer field by means of iterative optimization of solutions across simulation models, thus improving the prediction capability for the temperature drift performance of devices in a simulation design stage, and the accuracy of temperature drift simulation of acoustic devices.
A bending reliability test fixture, system and method. The bending reliability test fixture comprises a first force-bearing component (1) and a second force-bearing component (2) which are structurally identical and symmetrically spaced apart; the first force-bearing assembly (1) comprises a force-bearing plate (11), a clamping part (12) formed by protruding and extending from the middle area of one side of the force-bearing plate (11), a fixing slot (13) formed by recessing inwards from the end of the clamping part (12) away from the force-bearing plate (11), a fixed rotating shaft (14) fixed to the middle area of the side of the force-bearing plate (11) away from the clamping part (12), and a first transverse force-bearing beam (15) and a second transverse force-bearing beam (16), which are respectively fixed to the side of the force-bearing plate (11) away from the clamping part (12) and spaced apart on the upper and lower opposite sides of the fixed rotating shaft (14), and the fixing slot (13) is used for clamping a circuit board sample (3); the clamping part (12) of the first force-bearing component (1) and a clamping part of the second force-bearing component (2) are arranged directly facing each other. By adopting the bending reliability test fixture of the present invention, a bending reliability test can be simply and efficiently carried out on a circuit board sample, and meanwhile, the accuracy of a test result is improved.
The present invention is applicable to the technical field of wireless communications, and particularly relates to an acoustic component temperature drift prediction method and system and a related device. The present invention comprises: by means of a prearranged method, modifying material parameters of a first two-dimensional simulation model; under conditions of a prearranged input signal frequency, a prearranged environmental temperature and prearranged input power, performing acoustic simulation on a second two-dimensional simulation model; substituting component loss data into a three-dimensional equivalent model for steady-state heat transfer simulation; substituting an actual operating temperature into the second two-dimensional simulation model for calculation; and, on the basis of first admittance data and second admittance data, predicting the temperature drift of an acoustic component. The present invention uses multi-field coupling and solution inheritance of solid mechanics, electrostatics and heat transfer, and takes into account the effect of the self-heating of acoustic components on component performance and heat transfer conditions of environments where the components are located, thus effectively improving the capability of predicting the temperature drift performance of the acoustic components, greatly reducing resource consumption in component design, and accelerating product iteration.
G06F 119/02 - Reliability analysis or reliability optimisationFailure analysis, e.g. worst case scenario performance, failure mode and effects analysis [FMEA]
G06F 30/20 - Design optimisation, verification or simulation
48.
METHOD AND SYSTEM FOR DETERMINING RADIUS OF REFLECTION CIRCLE OF SURFACE ACOUSTIC WAVE FILTER, AND RELATED DEVICE
The present invention is applicable to the technical field of radio frequency communications, and particularly relates to a method and system for determining the radius of a reflection circle of a filter, and a related device. The method for determining the radius of a reflection circle of a filter provided in the present invention can ensure the accurate calculation of a maximum reflection radius of a reflection circle, and can also ensure the speed of calculation. Compared with existing exhaustive and iterative calculation methods, the method can significantly reduce the time for a single calculation, and has better calculation performance and universality when the number of frequency points is large.
The present invention relates to the technical field of radio frequency communications. Provided are a bulk acoustic resonator, and a preparation method therefor. The preparation method comprises the following steps: step S1, performing mask-aligned ultraviolet exposure on a photosensitive glass substrate; step S2, annealing the photosensitive glass substrate to form a crystallized sacrificial layer; step S3, growing and forming a seed layer on the photosensitive glass substrate; step S4, growing a bottom electrode on the seed layer; step S5, growing and forming a piezoelectric material layer on the upper surface of the bottom electrode and the upper surface of the seed layer; step S6, growing a top electrode on the upper surface of the piezoelectric material layer; step S7, etching the piezoelectric material layer to expose the bottom electrode; step S8, performing etching to form a through hole; and step S9, releasing an etching gas or solution via the through hole to etch the sacrificial layer, so as to form a cavity. The present invention can reduce process steps, lower the process difficulty and costs, decrease the insertion loss of a resonator, and improve the structural stability.
The present invention is applicable to the technical field of wireless communications, and particularly relates to a frequency sweep step determination method and system for an elastic filter, and a related device. Compared with the prior art, the present invention takes into full consideration the possible problems of frequency offset and fluctuation suppression during a test, and performs refined frequency sweep at the positions of a frequency term and a spurious peak, thereby ensuring the accuracy of test results at the positions of the frequency offset and the fluctuation suppression; the present invention also takes into full consideration the difference, in terms of the step requirements, between a test item having a high requirement for the test precision and a test item having a low requirement for the test precision, and provides different step rules for different test items; with respect to a frequency sweep range within which there are a plurality of test items, the present invention selects from the plurality of test items a step having the highest requirement, thereby ensuring the compatibility in terms of precision; and the present invention only requires the provision of a test specification and performance parameters, and it is not necessary to manually fill out a segmented frequency sweep table, such that the test precision is fully ensured, and the number of frequency points involved in a test can also be reduced to the greatest possible extent.
The present invention is applicable to the technical field of radio frequency front ends, and particularly to a radio frequency front-end module having input power protection, comprising a signal input end, a bias circuit, an amplifier, and a signal output end that are sequentially electrically connected, wherein the bias circuit comprises a coupling circuit, a rectifier circuit, a switching circuit, and a mirror current source circuit; the coupling circuit is used for isolating a direct-current signal inputted by the signal input end, and allowing a radio frequency signal to pass; the rectifier circuit is used for rectifying the radio frequency signal and outputting an envelope signal; the mirror current source circuit is controlled by the envelope signal and outputs a bias current to the amplifier. The bias circuit in a radio frequency power module of the present invention can measure power inputted to the amplifier, and on the basis of the measured average power of an input signal, actively reduce the bias current inputted to a power amplifier, thereby achieving the purpose of protecting the power amplifier.
The present invention is suitable for the technical field of radio frequency circuits, and particularly relates to a digital circuit for a multi-MIPI-RFFE interface, and a radio frequency device. The digital circuit comprises first and second MIPI protocol parsing modules, a logic parsing module, a control circuit module and a radio frequency circuit module, wherein an input end of the first MIPI protocol parsing module is connected to an external first MIPI host, and an output end of the first MIPI protocol parsing module is connected to a first input end of the logic parsing module; an input end of the second MIPI protocol parsing module is connected to an external second MIPI host, and an output end of the second MIPI protocol parsing module is connected to a second input end of the logic parsing module; an output end of the logic parsing module is connected to an input end of the control circuit module; and an output end of the control circuit module is connected to an input end of the radio frequency circuit module. The present invention prevents the problem of configuration conflicts caused by direct connection of different registers to a control circuit.
The present invention is suitable for the technical field of wireless communications, and particularly relates to a low-noise amplifier and a radio frequency chip. The low-noise amplifier provided by the present invention comprises a signal input end, a first notch filter circuit, an input matching circuit, a power amplification circuit, an output matching circuit, a second notch filter circuit and a signal output end. The first notch filter circuit comprises a first capacitor and a first inductor; a first end of the first inductor serves as a second input end of the first notch filter circuit; a second end of the first inductor is connected to a first end of the first capacitor; and a second end of the first capacitor serves as a first end of the first notch filter circuit. In this way, the present invention achieves out-of-band gain suppression of a low-noise amplifier and performance improvement of an index of an input second-order intercept point, so that the input and output return loss is not increased, thereby improving the performance of the low-noise amplifier.
The present invention is applicable to the technical field of wireless communications, and in particular relates to a bias voltage enhancement circuit and a radio frequency power amplifier. The bias voltage enhancement circuit comprises a signal input terminal, a current source generation circuit, an overcharge generation circuit, a linear voltage regulator circuit, and a signal output terminal electrically connected in sequence. The overcharge generation circuit comprises a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a first resistor, a second resistor, and a first capacitor. Compared with the prior art, the bias voltage enhancement circuit provided by the present invention generates a controllable voltage overcharge at the moment the bias voltage is established, so that the bias voltage of the radio frequency power amplifier is raised during this bias voltage establishment stage, thereby further improving the linearity of the radio frequency power amplifier during the turn-on phase and effectively enhancing the performance of the radio frequency power amplifier.
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
H03F 1/32 - Modifications of amplifiers to reduce non-linear distortion
H03F 3/19 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
H03F 3/21 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
H03F 1/14 - Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
The present utility model relates to the technical field of wireless communication. Disclosed are a low-noise amplifier and a radio frequency chip. The low-noise amplifier comprises a signal input end, an input matching circuit, an amplification circuit, an output matching circuit and a signal output end which are electrically connected in sequence. The low-noise amplifier further comprises a first transistor; a gate of the first transistor is connected between an output end of the input matching circuit and an input end of the amplification circuit, and the gate of the first transistor is further used for connecting to a first bias voltage; a drain of the first transistor is grounded; a source of the first transistor is connected to an input end of the output matching circuit; and an output end of the amplification circuit is further used for connecting to a power supply voltage. The low-noise amplifier of the present utility model can enhance the linearity of circuits, thereby improving the IIP3 performance of the whole low-noise amplifier.
The present invention is suitable for the technical field of wireless communications, and particularly relates to a transconductance-enhanced low-noise amplifier and a radio frequency chip. The transconductance-enhanced low-noise amplifier comprises: an input matching circuit, which comprises a first capacitor and a first inductor, a first end of the first capacitor being connected to a signal input end, a second end thereof being connected to a first end of the first inductor, and a second end of the first inductor being grounded; an output matching circuit, which comprises a second capacitor and a second inductor, a first end of the second capacitor being connected to a signal output end, a second end thereof being connected to a first end of the second inductor, and a second end of the second inductor being connected to a first power supply voltage; an amplifying circuit, which comprises a first MOS transistor and a first resistor, the source electrode of the first MOS transistor being connected to the second end of the first capacitor, the drain electrode thereof being connected to the second end of the second capacitor and the gate electrode thereof being connected to a first end of the first resistor, and a second end of the first resistor being connected to a bias voltage; and a transconductance enhancement circuit, which is used for feeding a signal input into the source electrode of the first MOS transistor into the gate electrode of the first MOS transistor. The present invention improves power gain without addition of a first-stage amplifier.
The present disclosure is applicable the technical field of radio frequency modules, and particularly relates to a radio frequency front-end module having bias compensation, and a radio frequency chip. The radio frequency front-end module having bias compensation proposed by the present disclosure comprises a signal input end, an input matching circuit, a time-varying circuit, a current mirror circuit, a power amplification circuit, an output matching circuit and a signal output end. A first end of the time-varying circuit is grounded. A second end of the time-varying circuit and a third end of the time-varying circuit are used to connect an enable signal. A fourth end of the time-varying circuit is connected to a first end of the current mirror circuit. A second end of the current mirror circuit is grounded. A third end of the current mirror circuit is used to connect the enable signal. A fifth end of the current mirror circuit is used to output a bias current to an input end of the power amplification circuit. The radio frequency front-end module proposed by the present disclosure can effectively reduce the implementation complexity of transmit power control, thereby reducing radiation and energy consumption, and prolonging the service life of the radio frequency front-end module.
The present invention provides a low-noise amplifier and a radio frequency power amplifier module. The low-noise amplifier comprises a signal input end, an input matching circuit, a first resistor, a frequency offset compensation circuit, a first field-effect transistor, a second field-effect transistor, an input attenuation circuit, a third field-effect transistor, a source attenuation circuit, a fourth field-effect transistor, a fifth field-effect transistor, a sixth field-effect transistor, an attenuation branch, a seventh field-effect transistor, a second resistor, a first capacitor, an output matching circuit, an output attenuation circuit, and a signal output end. According to the low-noise amplifier of the present invention, the gain, the noise coefficient, the IIP3 index and the current of the low-noise amplifier can be kept in balance, thereby improving the overall performance of the low-noise amplifier.
The present invention relates to the technical field of wireless communications. Disclosed in the present invention are a low-noise amplifier and a radio-frequency chip. The low-noise amplifier comprises a signal input end, a power amplifier circuit, an output matching circuit, an attenuation network and a signal output end, which are sequentially and electrically connected; and the low-noise amplifier further comprises a bypass circuit. The bypass circuit comprises a bypass switch circuit and a bypass matching circuit, wherein a first end of the bypass switch circuit serves as an input end of the bypass circuit, a first output end of the bypass switch circuit serves as a first output end of the bypass circuit, a second output end of the bypass switch circuit is connected to an input end of the bypass matching circuit, and an output end of the bypass matching circuit serves as a second output end of the bypass circuit; and the bypass switch circuit comprises a first bypass switch unit and a second bypass switch unit. The low-noise amplifier of the present invention has a simple structure, occupies a small area, and has high linearity.
The present invention is applicable to the technical field of wireless communications, and in particular relates to a low-noise amplifier and a radio frequency chip. Compared with the prior art, the low-noise amplifier of the present invention comprises a signal input end, an input matching network, a first gain attenuation unit, a second gain attenuation unit, a power amplification unit, an output matching network, and a signal output end. In the second gain attenuation unit, a gate of a first switch transistor, a gate of a second switch transistor, a gate of a third switch transistor, and a gate of a fourth switch transistor are connected to an external logic control circuit, a source of the first switch transistor, a source of the second switch transistor, a source of the third switch transistor, and a source of the fourth switch transistor are respectively grounded, and a first end of a second inductor is connected to an input end of the power amplification unit. In this way, the low-noise amplifier of the present invention can give considerations to IIP3 and noise figure while the gain is reduced.
The present invention relates to the technical field of wireless communications. Disclosed in the present invention are a tuner circuit and a radio-frequency chip. The tuner circuit comprises a tuner unit and a tuning device unit, wherein the tuner unit comprises a first resistor, a first transistor, a second resistor and a second transistor; a first end of the first resistor and a first end of the second resistor are connected to each other and jointly serve as an input end of the tuner unit, a second end of the first resistor is connected to a gate electrode of the first transistor, a drain electrode of the first transistor is connected to an input end of the tuning device unit, a source electrode of the first transistor is connected to a drain electrode of the second transistor, a second end of the second resistor is connected to a gate electrode of the second transistor, and a source electrode of the second transistor is grounded; the resistance value of the first resistor is greater than the resistance value of the second resistor; the gate width of the first transistor is greater than the gate width of the second transistor; and the gate length of the first transistor is greater than the gate length of the second transistor. The tuner circuit of the present invention can achieve a higher withstand voltage value and a lower Fom value can be achieved with a smaller area.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
62.
RADIO FREQUENCY FRONT-END MODULE HAVING ADJUSTABLE POWER SUPPLY AND BIAS, AND RADIO FREQUENCY CHIP
The present invention relates to the technical field of radio frequency, and disclosed are a radio frequency front-end module having an adjustable power supply and bias, and a radio frequency chip. The radio frequency front-end module comprises a signal input end, an input matching circuit, a final amplifier circuit, and a signal output end which are electrically connected in sequence. The radio frequency front-end module further comprises a power supply voltage conversion circuit and a bias current control circuit. An input end of the bias current control circuit is connected to a power supply, and an output end of the bias current control circuit is connected to a first input end of the final amplifier circuit. An input end of the power supply voltage conversion circuit is used for being connected to a power supply voltage, and an output end of the power supply voltage conversion circuit is connected to a second input end of the final amplifier circuit. A power supply switch and a power supply conversion circuit separately implement operation state switching by means of an external first control signal, and a first MOS transistor implements operation state switching by means of an external second control signal. The radio frequency front-end module of the present invention can adjust the power supply voltage and a bias current, thereby achieving optimization of power consumption and performance.
The present invention relates to the technical field of radio frequency. Disclosed in the present invention is a gain-adjustable linear low-noise amplifier, comprising a signal input end, an input matching adjustment module, a power amplification module, an output feedback module, an output matching adjustment module, a bias circuit module and a signal output end, wherein the signal input end, the input matching adjustment module, the power amplification module, the output matching adjustment module and the signal output end are electrically connected in sequence; two ends of the output feedback module are respectively connected to an output end of the power amplification module and an input end of the power amplification module, and the bias circuit module is connected to the input end of the power amplification module to provide a bias current; the bias circuit module comprises a first MOS transistor, a second MOS transistor, a third MOS transistor, a first resistor, a second resistor and a constant current source; and the output feedback module comprises a feedback circuit and a third resistor. The linear low-noise amplifier in the present invention can realize an adjustable gain, and has a good power consumption and a high level of linearity.
The present invention is applicable to the technical field of electronics, and provides a level converter. Compared with the prior art, the level converter provided by the present invention comprises a low-voltage inverter chain, a conversion capacitor unit, a conversion protection diode unit and a conversion cross-coupling pair. The conversion capacitor unit comprises a first capacitor and a second capacitor. A first end of the first capacitor receives a second differential logic signal, and a first end of the second capacitor receives a first differential logic signal. A second end of the first capacitor and a second end of the second capacitor are respectively connected to input ends of the conversion protection diode unit. Input ends of the conversion capacitor unit comprises a first capacitor input end and a second capacitor input end. The first end of the first capacitor serves as the first capacitor input end, and the first end of the second capacitor serves as the second capacitor input end. According to the level converter of the present invention, the overall structure is simpler, power consumption is effectively reduced, and a conversion dead zone is avoided.
The present invention is suitable for the field of ultra-wideband antenna optimization, and particularly relates to a parameter optimization method and system for an ultra-wideband antenna of a gradually changing structure, and a related device. The method comprises: using a structural parameter of an ultra-wideband antenna of a gradually changing structure as a single individual of a genetic algorithm, and initializing a population that contains a plurality of individuals and is used by the genetic algorithm, so as to obtain an initial population; using a preset simulation tool to perform simulation calculation on the structural parameter corresponding to each individual in the initial population, so as to obtain an S parameter corresponding to the structural parameter; calculating the fitness of the initial population on the basis of the S parameters; using the initial population and the fitness as parameters of the genetic algorithm to perform iterative optimization calculation until the fitness meets a preset optimization condition; and outputting, as an optimization result, the structural parameter corresponding to the fitness. The present invention can improve the optimization efficiency of structural parameters of an antenna.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
66.
RADIO-FREQUENCY POWER AMPLIFIER AND RADIO-FREQUENCY CHIP MODULE
The present invention relates to the technical field of radio frequency. Disclosed in the present invention are a radio-frequency power amplifier and a radio-frequency chip module. The radio-frequency power amplifier comprises a signal input end, an input matching circuit, a power amplifier, a bias circuit, and a signal output end, wherein the signal input end, the input matching circuit, the power amplifier and the signal output end are electrically connected in sequence; an input end of the bias circuit is connected to a reference voltage source, and an output end of the bias circuit is connected between the input matching circuit and the power amplifier; the bias circuit comprises a first resistor, a first triode, a second triode, a second resistor, a third triode, a third resistor, a first capacitor and a second capacitor; and a collector of the third triode is connected to a first end of the second capacitor, and an emitter of the third triode is connected to a second end of the second capacitor. The radio-frequency power amplifier in the present invention can increase output power, and can also effectively reduce power consumption and improve the efficiency.
The present invention is applicable to the technical field of filter optimization design, and in particular relates to a method and system for designing filter parameters on the basis of Bayesian optimization, and a related device. The method comprises the following steps: constructing an optimization model on the basis of parameters of a surface acoustic wave filter that need to be optimized, and performing optimization calculation on the parameters on the basis of the optimization model, so as to obtain optimized parameters; constructing a preset optimization algorithm based on a Bayesian optimization method; and performing iterative calculation by taking the optimized parameters as inputs of the preset optimization algorithm, and obtaining a parameter optimization result corresponding to the parameters. Compared with the prior art, the present invention uses an HCT-FEM method to replace a COM to calculate the parameters of a filter, which improves the calculation precision of filter parameters when the number of IDTs is small; moreover, a Bayesian optimization method is used during parameter optimization, which avoids the problems of gradient optimization relying on initial values and the optimization efficiency of global optimization being low, and improves the iteration speed of the parameter optimization process.
The present invention relates to the technical field of radio frequency. Disclosed are a power amplifier circuit and a radio frequency power amplifier module. The power amplifier circuit comprises a signal input end, a first-stage power amplifier, a coupler, an inter-stage matching circuit, a final-stage power amplifier, an output matching circuit, and a signal output end. The final-stage power amplifier comprises a first field-effect transistor. The power amplifier circuit further comprises a power detection module, a capacitor assembly consisting of multiple capacitors connected in parallel, a first triode, a first resistor, a triode assembly consisting of one or more triodes connected in series, a second resistor, a first capacitor, a third resistor, a first inductor, a second capacitor, and a varicap diode. According to the power amplifier circuit of the present invention, the amplitude modulation and phase modulation performance of amplifiers can be optimized, the technical implementation is simple, and the cost is low.
The present invention relates to the technical field of radio frequency modules. Disclosed is a dual-mode radio frequency front-end module. The dual-mode radio frequency front-end module comprises a signal input end, a first-stage amplifier, an interstage matching circuit, a second-stage amplifier, a main bias circuit and a signal output end, wherein the main bias circuit comprises an amplifier bias circuit and a current adjustment circuit, a first end of the current adjustment circuit is used for being connected to an input port of a radio frequency front end, a second end of the current adjustment circuit is grounded, a third end of the current adjustment circuit is connected to both a power source voltage and a first end of the amplifier bias circuit, and a fourth end of the current adjustment circuit is connected to a second end of the amplifier bias circuit; and a third end of the amplifier bias circuit is grounded, a fourth end of the amplifier bias circuit is connected to the power source voltage, a fifth end of the amplifier bias circuit serves as an output end of the main bias circuit, and the fifth end of the amplifier bias circuit outputs a bias current to a gate electrode of the second-stage amplifier. The dual-mode radio frequency front-end module of the present invention can prevent signal distortion, reduces energy consumption, and has high working efficiency.
The present invention relates to the technical field of electronics. Disclosed in the present invention are a BG start-up circuit and a radio frequency chip. The BG start-up circuit comprises a signal input end, a start-up circuit, a BG main-body circuit and a signal output end, wherein the start-up circuit comprises an inverter link, a bias branch, a capacitor charging branch, a start-up detection branch and a current injection branch, which are electrically connected in sequence; the signal input end is used for realizing the connection of an enable signal with the whole circuit; an input end of the inverter link respectively outputs a first reverse signal and a second reverse signal; an output end of the bias branch outputs a bias voltage; the capacitor charging branch outputs a charging signal; the start-up detection branch outputs a voltage measurement signal; an input end of the current injection branch converts the voltage measurement signal into a current signal; and the BG main-body circuit respectively receives the current signal and the second reverse signal to start up the circuit. The BG start-up circuit in the present invention has a simple structure, low power consumption and good reliability.
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
71.
TRANSMISSION POWER ADJUSTMENT MODULE, RADIO-FREQUENCY FRONT-END MODULE, AND WIRELESS TRANSMISSION DEVICE
The present invention belongs to the technical field of radio frequency. Disclosed are a transmission power adjustment module, a radio-frequency front-end module, and a wireless transmission device. The transmission power adjustment module comprises a signal receiving end, a low-noise amplifier, a signal coupler, a signal output end, a coupling-signal amplifier, a rectifier module, a first transistor, a second transistor, a first switch, a capacitor, a second switch, a third transistor, a fourth transistor and an adjustable resistor module. The transmission power adjustment module in the present invention can not only adjust the transmission power of a power amplifier in a radio-frequency front-end module, such that the power amplifier does not perform transmission at the maximum power all the time, thereby reducing radiation, reducing power consumption and heat generation, and prolonging the service life, but can also make the implementation process simpler.
The present invention relates to the technical field of radio frequency, and disclosed are a clock signal control module and a radio frequency front end module. The clock signal control module comprises an RC oscillating circuit, a random sequence generating circuit, and a control circuit; the RC oscillating circuit comprises capacitors and resistors; an input end of the random sequence generating circuit is connected to an input end of the RC oscillating circuit, and an input end of the control circuit is connected to an output end of the random sequence generating circuit; the random sequence generating circuit is used for generating a random control signal, and the control circuit is used for controlling, on the basis of the received control signal, the capacitance and/or the resistance of the capacitors and/or the resistors connected to the oscillating frequency of the RC oscillating circuit. In the clock signal control module in the present invention, harmonic noise of the clock signal control module at a high frequency band can be averaged, with no periodic spikes, essentially solving the problem of clock harmonic noise.
The present invention is applicable to the technical field of numerical optimization, and particularly relates to a surface acoustic wave filter parameter optimization method and system, and a related device. The method comprises: S1, constructing an optimization model on the basis of a parameter needing to be optimized of a surface acoustic wave filter, and performing optimization computation on the parameter on the basis of the optimization model to obtain an optimized parameter; S2, constructing an adaptive particle swarm optimization algorithm capable of parallel computation of particle fitness, wherein the particle fitness comprises velocity and position; and S3, performing iterative computation by taking a particle swarm comprising the optimized parameter as input of the adaptive particle swarm optimization algorithm, to obtain a parameter optimization result corresponding to the parameter. The present invention solves the problems of difficulty in optimization and low optimization efficiency in a parameter optimization process by means of parameter coupling and swarm parallelism methods, improves the computation efficiency in filter parameter optimization, and further optimizes the simulation process.
G06F 30/25 - Design optimisation, verification or simulation using particle-based methods
G06F 30/20 - Design optimisation, verification or simulation
G06N 3/006 - Artificial life, i.e. computing arrangements simulating life based on simulated virtual individual or collective life forms, e.g. social simulations or particle swarm optimisation [PSO]
H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
74.
DESIGN METHOD AND SYSTEM FOR FREQUENCY BAND OF SURFACE ACOUSTIC WAVE FILTER AND RELATED DEVICE
The present invention relates to the technical field of filter optimization. Disclosed in the present invention are a design method and system for a frequency band of a surface acoustic wave filter and a related device. The design method comprises the following steps: step S1, establishing a performance parameter database of existing surface acoustic wave filters of frequency bands; step S2, extracting, from the performance parameter database, dms geometric parameters corresponding to the existing surface acoustic wave filter of a similar frequency band similar to a designed frequency band, and adjusting the pitch of the dms geometric parameters to transplant the similar frequency band to the corresponding designed frequency band, to obtain a frequency band initial value; step S3, removing unimportant variables of the dms geometric parameters by means of a Sobal sensitivity analysis method, and reserving corresponding important variables of the dms geometric parameters; and step S4, on the basis of the frequency band initial value and the important variables, performing optimization calculation by means of a gradient optimization algorithm to obtain a performance parameter of a target surface acoustic wave filter. The design method for the frequency band of the surface acoustic wave filter provided by the present invention can improve the design efficiency of the frequency band.
The present invention provides a real-time simulation method and system for electrothermal properties of an elastic wave filter, and a related device. The method comprises the following steps: establishing a finite element simulation heat transfer three-dimensional model of the elastic wave filter; setting a heating boundary condition of each resonator, and carrying out thermal simulation on each resonator; calculating an environment heat transfer tensor of the elastic wave filter; establishing an equivalent circuit model of the elastic wave filter, and then carrying out electrical simulation on the equivalent circuit model to obtain the heating power of the elastic wave filter; and coupling the environment heat transfer tensor with the heating power to finally obtain the real-time electrothermal properties of the elastic wave filter. The present invention has the beneficial effects that the environment heat transfer tensor of the elastic wave filter obtained by means of temperature simulation is coupled with the heating power, so that the temperature of each resonator on the elastic wave filter can be obtained by means of real-time simulation while using an equivalent circuit to design the elastic wave filter, thereby simplifying the steps of the temperature simulation, and greatly shortening the design period of the elastic wave filter.
G06F 30/23 - Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
The present invention relates to the technical field of wireless communications. Disclosed are a bias circuit, a radio frequency circuit, and a radio frequency chip. The bias circuit comprises a signal input end, an overshoot circuit, a current mirror circuit, a voltage reverse circuit, a bias voltage output circuit, and a signal output end. The signal input end is connected to the current mirror circuit, the voltage reverse circuit and the bias voltage output circuit, respectively. A first end of the overshoot circuit is grounded, and a second end of the overshoot circuit is connected to the current mirror circuit. The signal input end is used for receiving an enable signal. The overshoot circuit is used for generating overshoot to compensate for the response speed of a radio frequency amplifier. The output end of the current mirror circuit is connected to a second input end of the voltage reverse circuit. The output end of the voltage reverse circuit is connected to a second input end of the bias voltage output circuit. A third input end of the bias voltage output circuit is used for being connected to a power supply, and the output end of the bias voltage output circuit is connected to the signal output end. The bias circuit of the present invention enables the transient response effect of the radio frequency amplifier to be fast.
The present invention relates to the technical field of communications. Disclosed in the present invention are a radio frequency die module debugging device and method. The radio frequency die module debugging device comprises a debugging connection module, a direct current power supply, a radio frequency signal source, a radio frequency signal analyzer, a debugging board and a superordinate computer. The debugging connection module comprises a substrate and debugged power amplifier dies (PADs) arranged on the substrate; the debugged PADs are electrically connected to one ends of debugging bias signals; one ends of a plurality of analog switches are respectively connected to the superordinate computer and the direct current power supply; second ends of the plurality of analog switches are respectively connected to the other ends of the debugged PADs; one end of a current detection unit is connected to the direct current power supply, and the other end of the current detection unit is connected to the analog switches; the current detection unit is used for detecting an output current signal; and the radio frequency signal analyzer is used for detecting an output radio frequency signal and feeding back the current signal and the radio frequency signal to the superordinate computer. The radio frequency die module debugging device of the present invention involves low research and development costs and has high test efficiency.
A preparation method for reducing a standing wave effect during exposure of a wafer. The method comprises the following steps: S1, coating a back surface of a wafer with an antireflection film, wherein the wafer is a wafer made of a piezoelectric material, and the antireflection film is a semiconductor thin film; S2, spin-coating, with a photoresist, the surface of the wafer that has been coated with the antireflection film, and performing exposure and development processing, so as to form a photolithographic pattern; S3, stripping the photoresist off the wafer on which the photolithographic pattern has been formed; and S4, removing the antireflection film from the wafer off which the photoresist has been stripped. By means of the preparation method, a standing wave effect caused by interference between reflected light from a front surface of a wafer and reflected light from a back surface of the wafer can be reduced, such that an interdigitated appearance is improved to form a perfect sidewall structure, and the flexibility of design of a wafer can also be improved.
G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
79.
RADIO FREQUENCY LOW-NOISE AMPLIFIER CIRCUIT AND RADIO FREQUENCY CHIP
A radio frequency low-noise amplifier circuit and a radio frequency chip includes a signal input end, an input matching circuit, an amplification circuit, an output matching circuit, a signal output end, and a gain adjustment circuit connected in parallel with the amplification circuit. The gain adjustment circuit includes a tenth transistor, an eleventh transistor, a twelfth transistor, a first resistor, a second resistor, a third resistor, and a fourth capacitor. A source of the tenth transistor, a source of the eleventh transistor, and a source of the twelfth transistor are connected and are grounded. The tenth transistor is connected to the first resistor, the eleventh transistor is connected to the second resistor, and the twelfth transistor is connected to the third resistor. The first resistor, the second resistor, and the third resistor are connected to the fourth capacitor. The fourth capacitor is connected to the amplification circuit.
An adaptive frequency sweeping method and an adaptive frequency sweeping system for frequency point sampling, and related devices, related to a technical field of wireless communication are provided, the adaptive frequency sweeping method is applied to simulation of radio frequency (RF) components. The adaptive frequency sweeping method for the frequency point sampling does not hinge upon specific numerical values and enables precise simulation at positions where frequency responses rapidly change while performing coarse simulation in areas that are not concerned about, thereby improving precision and efficiency of a design process for the RF components. Moreover, aiming at characteristics of Y parameters and S parameters in the frequency responses, different evaluation metrics are provided to reduce sampling points required for frequency sweeping and increasing a frequency sweeping speed.
H01Q 3/22 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the orientation in accordance with variation of frequency of radiated wave
81.
SIMULATION PARAMETER ACQUISITION METHOD AND SYSTEM FOR ELASTIC WAVE DEVICE, AND RELATED DEVICE
The present invention is applicable to the technical field of wireless communications, and particularly relates to a simulation parameter acquisition method and system for an elastic wave device, and a related device. Provided in the present invention is a simulation parameter acquisition method for an elastic wave device, which method can fully utilize tape-out data of a large number of filters; according to the method of the present invention, in the acquisition of simulation parameters of an elastic wave device, the objective of simulation is not to take actual parameters as a benchmark, but rather to reduce admittance and scattering curve errors, thus improving the utilization rate of simulation data whilst enabling an elastic wave device constructed on the basis of the obtained simulation parameters to be closer to the actual performance, and also improving the simulation precision and model quality of a simulation method using a coupling model for the acquisition of simulation parameters of an elastic wave device, such that the model is highly transferable.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
G06F 119/02 - Reliability analysis or reliability optimisationFailure analysis, e.g. worst case scenario performance, failure mode and effects analysis [FMEA]
82.
FINITE ELEMENT SIMULATION METHOD AND SYSTEM USING MIXED UNIT ORDER, AND RELATED DEVICE
The present invention is suitable for the technical field of wireless communications, and particularly relates to a finite element simulation method and system using a mixed unit order, and a related device. The present invention provides a method for performing modeling by using a grid type, in which a high-order unit and a low-order unit are combined, in filtering device simulation based on a finite element method. Units with different orders are assembled in a model, and the interpolation characteristic of the low-order unit is used to constrain a conflict node in the high-order unit and eliminate the degree of freedom thereof, such that the overall degree of freedom of a filtering device model, which is constructed by means of simulation, is reduced on the premise of ensuring the computation precision, thereby reducing the computation dimensionality and improving the overall computation efficiency of a simulation process.
The present invention is applicable to the technical field of piezoelectric simulation, and particularly relates to a combined simulation method and system for multiple surface acoustic wave devices, and a related apparatus. The present invention provides a combined simulation method for multiple surface acoustic wave devices, in which ports of each circuit element in a filter device are exposed during modeling. According to the method, a P matrix model based on ports of circuit elements is established, and combined connection and simulation circuit simulation between devices are performed by using the matrix model, such that simulation modeling of structures containing short circuits, suspension and the like is realized; and rapid simulation of a combination of multiple surface acoustic wave devices is realized on the basis of a combined circuit, thereby improving simulation efficiency.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
84.
AUTOMATIC ASSEMBLY METHOD AND SYSTEM FOR SURFACE ACOUSTIC WAVE FILTER LAYOUTS, AND RELATED DEVICE
The present invention is suitable for the technical field of wireless communications, and particularly relates to an automatic assembly method and system for surface acoustic wave filter layouts, and a related device. The present invention provides a method for sequentially generating interdigital transducer layouts and reflection grating layouts from the most basic interdigital and busbar units and finally assembling same into complete surface acoustic wave filter layouts. According to the method, automatic layout assembly can be carried out according to a preset rule, and basic geometric parameters of a library of units can be selected according to surface acoustic wave filters to be assembled. Compared with an artificial layout design process in the prior art, the method of the present invention can reduce the time cost when the surface acoustic wave filter with a gradient structure is drawn, avoid the manual error probability, and improve the working efficiency.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
A temperature compensation bias circuit is provided, including a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, a second capacitor, a third capacitor, a fifth capacitor, a fifth transistor, a sixth transistor, and a seventh transistor. A power amplifier is further provided, the power amplifier applies the temperate compensation bias circuit. Compared with the prior art, there are fewer effects on a bias point of the temperature compensation bias circuit when the temperature compensation bias circuit and the power amplifier are in RF operating states, the power amplifier is enabled to have good temperature compensation effect and high linearity.
The present invention is applicable to the technical field of piezoelectric material electromechanical coupling, and particularly relates to a grid matrix generation method and system for finite element simulation, and a related device. The present invention provides a method for using mathematical relationships among finite element grids of different sizes in the simulation process of a surface acoustic wave device to quickly calculate and obtain element matrixes. Compared with the prior art, the method of the present invention can calculate finite element matrixes for interdigital transducer portions made of different materials, and reduce the calculation amount of the matrixes according to the types of the materials; and in the simulation of the surface acoustic wave device having unobvious periodic characteristics, complex layers and variable structures, the calculation efficiency of simulation can be remarkably improved.
The present invention is suitable for the technical field of wireless communications, and particularly relates to a simulation method and system based on separated degrees of freedom in multiphysics, and a related device. Provided in the present invention is a simulation method based on separated degrees of freedom in multiphysics. In the method, for a matrix of an internal degree of freedom among matrices of a filtering device, which is constructed by using a finite element method, the characteristic of only matrices of some physical fields changing along with frequency in multiphysics simulation is used to construct an invariable cache matrix according to an inversion rule of a block matrix, so as to reduce the dimensionality of a matrix to be subjected to inversion, thereby reducing the inversion calculation amount of matrix splicing in a hierarchical cascading technique, and improving the overall simulation efficiency.
Disclosed in the present invention is an adaptive adjustment impedance circuit, comprising a power amplifier, a directional coupler and a control logic circuit which are connected in sequence. The adaptive adjustment impedance circuit further comprises an impedance tuning circuit, a first power detector and a second power detector. An output end of the power amplifier is connected to an input end of the impedance tuning circuit, an output end of the impedance tuning circuit is connected to an input end of the directional coupler, and an output end of the directional coupler is connected to a load. An input end of the first power detector is connected to the output end of the power amplifier, and an input end of the second power detector is connected to the output end of the directional coupler. An output end of the first power detector and an output end of the second power detector are separately connected to an input end of the control logic circuit, and an output end of the control logic circuit is connected to the input end of the impedance tuning circuit. The self-adaptive impedance adjustment circuit of the present invention exhibits strong anti-interference capability, high transmission efficiency and wide application range.
The present invention is applicable to the field of thermal simulation, and particularly relates to a method and system for predicting an energy withstand value of a filtering device, and a related device. Provided in the present invention is a method for predicting an energy withstand value of a filtering device by means of coupling electrical simulation, thermal simulation and an actual test. A power prediction factor is calculated by means of coupling a plurality of types of simulation data, such that influence of a packaging environment on circuit elements when same generate heat, and influence of thermal crosstalk between electronic elements can be embodied when a withstand value is calculated; and compared with existing techniques, the present invention can make data better fit actual thermal simulation results.
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
90.
POWER AMPLIFIER CIRCUIT AND RADIO FREQUENCY POWER AMPLIFIER MODULE
Disclosed in the present invention are a power amplifier circuit and a radio frequency power amplifier module. The power amplifier circuit comprises a signal input end, an input matching network, a first power amplifier, a first bias circuit, a second power amplifier, a second bias circuit, an interstage matching network, a third power amplifier, a third bias circuit, a fourth power amplifier, a fourth bias circuit, an output matching network and a signal output end. The power amplifier circuit of the present invention can reach the highest gain in a high-power mode, and can reach the lowest gain in a low-power mode; additionally, the overall efficiency of the power amplifier circuit is improved, and the control flexibility is improved.
Provided in the present invention is a power amplifier circuit. The power amplifier circuit comprises a signal input end, an input matching network, a first transistor, an interstage matching network, a second transistor, an output matching network and a signal output end, which are connected in sequence. An input end of a second resonant circuit is connected to a first output end of a second bias circuit; an emitter of the second transistor is grounded, and a collector electrode of the second transistor is connected in series to a second inductor and is connected to a second power source voltage and is connected to an input end of the output matching network. The power amplifier circuit further comprises a current limiting circuit, wherein a first end of the current limiting circuit is connected to an input end of the interstage matching network; a second end of the current limiting circuit is connected to the input end of the second resonant circuit; and a third end of the current limiting circuit is connected to a second output end of the second bias circuit. The power amplifier circuit in the present invention can improve the gain and efficiency, and the reliability is high.
Disclosed in the present invention are a radio frequency power amplifier and a radio frequency power amplifier module. The radio frequency power amplifier comprises a signal input end, an input matching network, a first capacitor, a second capacitor, a first bias circuit, a first power amplifier, a third capacitor, a fourth capacitor, a second bias circuit, a second power amplifier, an interstage matching network, a fifth capacitor, a sixth capacitor, a third bias circuit, a third power amplifier, a seventh capacitor, an eighth capacitor, a fourth bias circuit, a fourth power amplifier, an output matching network, and a signal output end. According to the radio frequency power amplifier in the present invention, deterioration of gain compression and linear distortion of the radio frequency power amplifier can be effectively suppressed.
The present invention is applicable to the technical field of electromechanical coupling of piezoelectric materials, and particularly relates to a rapid simulation method and system for a multi-symmetric surface acoustic wave device, and a related device. In the present invention, for a special structure of a progressive multi-symmetric surface acoustic wave filter and a matrix symmetry mathematical relationship in a finite element method, during a simulation process of the surface acoustic wave filter, the construction time of a large number of sub-unit matrices and the calculation time of stitching the matrices using a hierarchical cascading technique are reduced by using negation and equivalence relationships of the matrices, thereby improving the simulation speed of the progressive multi-symmetric surface acoustic wave filter, and improving the simulation efficiency.
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
G06F 30/23 - Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
94.
SURFACE ACOUSTIC WAVE FILTER AND RADIO FREQUENCY CHIP
The present invention provides a surface acoustic wave filter and a radio frequency chip. The surface acoustic wave filter comprises a piezoelectric substrate, a first longitudinally coupled filter and a second longitudinally coupled filter which are respectively fixed on the piezoelectric substrate and are spaced apart from each other, a bending inductor, a first output terminal, and a second output terminal; the first longitudinally coupled filter comprises a first bus bar and a second bus bar, a first interdigital region, a first reflection grating, and a second reflection grating, the first bus bar is connected to the first output terminal, and the second bus bar is connected to a first end of the bending inductor; the second longitudinally coupled filter comprises a third bus bar, a fourth bus bar, a second interdigital region, a third reflection grating, and a fourth reflection grating, the third bus bar is connected to a second end of the bending inductor, and the fourth bus bar is connected to the second output terminal. According to the surface acoustic wave filter of the present invention, the passband edge insertion loss and standing waves of cascaded longitudinally coupled filters can be effectively reduced, thereby improving the sensitivity of the system and the performance of the filter.
The present invention is applicable to the technical field of wireless communications. Provided are a fast fitting method and system for a simulation parameter of a surface acoustic wave device, and a related device. The method comprises: determining a simulation parameter for simulating a surface acoustic wave device; acquiring an actually measured admittance curve of the surface acoustic wave device, and determining an admittance curve feature; matching the simulation parameter with the admittance curve feature, and performing decoupling processing on the simulation parameter, so as to construct a single objective optimization problem about an error parameter between the simulation parameter and the admittance curve feature; iteratively solving the single objective optimization problem by using a gradient estimation method until the error parameter meets a preset error interval constraint, such that a feasible solution for the simulation parameter is obtained; and optimizing the surface acoustic wave device according to the feasible solution for the simulation parameter. The present invention can improve the efficiency of calculating a feasible solution for a simulation parameter, without reducing the feasibility of the solution for the simulation parameter, and compared with the prior art, the stability of the solution achieved by the present invention is higher.
The present invention is applicable to the technical field of surface-acoustic-wave filter simulation. Provided are a thermal simulation method and system for a filter module, and a related device. The method comprises: constructing an equivalent circuit of a filter module which includes resonators and dual-mode surface-acoustic-wave filters; constructing an electrical layout of the filter module; calculating the heating power of each resonator and the heating power of each dual-mode surface-acoustic-wave filter in the filter module on the basis of the equivalent circuit, and the frequency and power of an input signal which is inputted into the filter module; constructing a two-dimensional model of the dual-mode surface-acoustic-wave filters; performing simulation calculation on the basis of the two-dimensional model, so as to obtain temperature distribution data of the dual-mode surface-acoustic-wave filters; establishing a thermal simulation model of the filter module; on the basis of the heating powers, setting a boundary condition of performing thermal simulation by the filter module; and performing heat transfer simulation on the basis of the thermal simulation model and the boundary condition, so as to obtain thermal simulation data of the filter module. The present invention improves the accuracy of thermal simulation data of a filter module.
Disclosed in the present invention are a thermal simulation method and system for a filter module, and a related device. The thermal simulation method for the filter module comprises the following steps: establishing an equivalent circuit comprising a resonator and a dual-mode surface acoustic wave filter; drawing an electrical layout; determining the frequency and power of an input signal according to the equivalent circuit, and acquiring the heating power of the resonator and the heating power of the dual-mode surface acoustic wave filter according to the frequency and power of the input signal; establishing a thermal simulation model according to the electrical layout; setting a boundary condition for thermal simulation of the filter module according to the heating power of the resonator and the heating power of the dual-mode surface acoustic wave filter; and performing heat transfer simulation according to the thermal simulation model and the boundary condition to obtain thermal simulation data of the filter module. The thermal simulation method for the filter module in the present invention solves the problem in the related art of being unable to perform heat transfer simulation on a filter module comprising a dual-mode surface acoustic wave filter.
Provided in the present utility model are an adaptive linear power amplifier and a radio frequency chip. The adaptive linear power amplifier comprises a signal input end, an input matching network, a first transistor and a signal output end, which are successively connected, and an adaptive bias circuit used for providing a bias voltage for the first transistor. The adaptive bias circuit comprises a temperature compensation circuit, a first capacitor, a second transistor, a first resistor and a second capacitor. A first end of the temperature compensation circuit is separately connected to the first capacitor and the second transistor. A second end of the first capacitor is grounded. A collector of the second transistor serves as an input end of the adaptive bias circuit. An emitter of the second transistor is separately connected to a first end of the first resistor and a first end of the second capacitor. A second end of the first resistor and a second end of the second capacitor are connected to serve as an output end of the adaptive bias circuit together. The adaptive linear power amplifier of the present utility model can suppress gain compression, thereby improving the linearity of the power amplifier.
The present application discloses a radio frequency power amplifier and a radio frequency power amplifier module. The radio frequency power amplifier comprises a signal input end, an input matching network, a power amplifier and a signal output end which are connected in sequence; the radio frequency power amplifier further comprises a linearized bias circuit connected to the input end of the power amplifier; and the linearized bias circuit comprises a first resistor, a first triode, a second triode, a first capacitor, a second resistor, a third triode and a third resistor. According to the radio frequency power amplifier, by additionally providing the second resistor connected in series to the first capacitor in the linearized bias circuit, the sensitivity of the branch to frequency is reduced while the linearity is improved, so that the radio frequency power amplifier is suitable for a broadband circuit.
The present invention provides a low-noise amplifier and a radio frequency chip. The low-noise amplifier comprises a signal input end, a cascode low-noise amplification link comprising a source-level negative feedback inductor, an output matching network, an output resistance attenuation network and a signal output end which are connected in sequence. The low-noise amplifier further comprises a plurality of switches, a bypass matching circuit, and a transistor bias access circuit. The cascode low-noise amplification link comprises a first inductor, a first capacitor, a first transistor, a second transistor, a second inductor, a third inductor, and a second capacitor. The plurality of switches comprise a first switch, a second switch, a third switch, and a fourth switch. A second end of the first inductor is connected to a first end of the first switch and a first end of the second switch, respectively. A second end of the first switch is connected to a first end of the bypass matching circuit and a first end of the fourth switch, respectively. The first end of the fourth switch is grounded. A second end of the bypass matching circuit is connected to a first end of the third switch. The low-noise amplifier of the present invention has diversified modes and functions, high reliability, and a wide application range.
