Goods & Services

Software and framework for aggregating and combining measurement parameters of semiconductor wafers in the production of semiconductor devices; software for analysing and interpreting in-situ and in-line measurement parameters before, during and after thin film deposition, thin film etching and other treatment and characterisation steps; software for improving the yield and the stability of production processes and their analysis results for statistical process control in the production of semiconductor devices.

Goods & Services

Optical sensors; electronic devices and equipment for measuring and characterising physical parameters of semiconductor wafers and other thin-film samples in the manufacture of electronic and optoelectronic components.

Goods & Services

Downloadable software for aggregating and combining measurement parameters of semiconductor wafers in the production of semiconductor devices; Downloadable software for analysing and interpreting in-situ and in-line measurement parameters before, during and after thin film deposition, thin film etching and other treatment and characterisation steps; Downloadable software for improving the yield and the stability of production processes and their analysis results for statistical process control in the production of semiconductor devices

Goods & Services

Optical sensors; electronic devices and equipment for measuring and characterising physical parameters of semiconductor wafers and other thin-film samples in the manufacture of electronic and optoelectronic components.

Abstract

The present invention relates to a method and an apparatus for measuring the thickness d of a transparent layer (10), and in particular to a method and an apparatus for measuring the thickness d of glass plates during wet-chemical glass thinning in the manufacturing process. The present invention relates to a method and an apparatus for measuring the thickness d of a transparent layer (10), and in particular to a method and an apparatus for measuring the thickness d of glass plates during wet-chemical glass thinning in the manufacturing process. The method for measuring the thickness d of a transparent layer (10) includes: determining an approximate thickness dFFT based on a precisely known dispersion n(l) of the material of the layer (10) by performing Fast Fourier Transformation, FFT, analysis on Fabry-Pérot oscillation, FPO, from the layer (10) in a spectral reflectance measurement (900); and performing a FPO full-spectral fitting procedure (910-0) with the approximated thickness dFFT as starting value d0,0 to determine an initial local best fitting thickness dFPO,0. After the initial local best fitting thickness dFPO,0 has been found, the FPO full-spectral fitting procedure (910-i) may be repeated with specific alternative starting values d0,i to determine a global best fitting thickness dFPO.

IPC Classes  ?

• G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness

Abstract

The invention relates to a method and to a device for the in-situ determination of the temperature ϑ of a sample, in particular to a method and to a device for the surface-corrected determination of the temperature ϑ of a sample by means of the band-edge method. The invention relates to a method and to a device for the in-situ determination of the temperature ϑ of a sample, in particular to a method and to a device for the surface-corrected determination of the temperature ϑ of a sample by means of the band-edge method. It is provided that, for the in-situ determination of the temperature ϑ of a sample (10) when growing a layer stack (12) in a deposition system, a surface-corrected transmission spectrum T′(λ) is calculated by determining the quotient of the transmission spectrum T(λ) and a correction function K(λ), the correction function K(λ) being calculated from a determined reflection spectrum R(λ). Subsequently, the spectral position of the band-edge λBE is determined from the transmission spectrum T′(λ), and the temperature ϑ is determined from the spectral position of the band-edge λBE by means of a known dependency ϑ(λBE).

IPC Classes  ?

• G01J 5/08 - Optical arrangements
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Goods & Services

Software to analyze and interpret in-situ and in-line measurement parameters before, during and after thin layer deposition; software to control process deviations during thin layer deposition; software to improve yield and stability of production processes by correlating multi-measurement parameters and their analysis results for the statistical process control.

Goods & Services

Software to analyze and interpret in-situ and in-line measurement parameters before, during and after thin layer deposition; software to control process deviations during thin layer deposition; software to improve yield and stability of production processes by correlating multi-measurement parameters and their analysis results for the statistical process control

Goods & Services

Optical sensors; electronic devices and plants assembled thereof for measuring physical parameters; electronic devices and plants assembled thereof for measuring, monitoring and controlling the layer growth during the manufacture of semiconductor devices; software.

Goods & Services

Optical sensors; electronic devices and plants assembled thereof for measuring physical parameters; electronic devices and plants assembled thereof for measuring, monitoring and controlling the layer growth during the manufacture of semiconductor devices; software for recording and analyzing data from optical sensors, electronic devices and plants assembled thereof, during the semiconductor manufacturing process

Abstract

The present invention provides for an apparatus for measuring a curvature of a surface of a wafer in a multi-wafer epitaxial reactor.

IPC Classes  ?

• G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
• G01B 11/255 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring radius of curvature
• H01L 21/66 - Testing or measuring during manufacture or treatment

Goods & Services

Optical sensors; electronic devices and plants assembled thereof for measuring physical parameters and for measuring, monitoring and controlling the layer growth during the manufacture of semiconductor devices; software.

Abstract

An apparatus for measuring a curvature of a surface (1), comprising means for irradiating a first light beam (S1), a second light beam (S2) and a third light beam (S3) onto a surface (1) of a sample (12), a detector (5) comprising at least one detector plane and being adapted to detect a first position of the reflected first light beam (S1), a second position of the reflected second light beam (S2) and a third position of the reflected third light beam (S3) in the at least one detector plane, means for determining a first distance between the first position of the first light beam (S1) and the third position of the third light beam (S3) and a second distance between the second position of the second light beam (S2) and the third position of the third light beam (S3), and means for determining a mean curvature of the surface from the first distance and the second distance. The first light beam (S1), the second light beam (S2) and the third light beam (S3) are parallel to each other and the first light beam (S1) is spaced apart from a plane defined be the second light beam (S2) and the third light beam (S3).

IPC Classes  ?

• G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces

Abstract

A method for calibrating a pyrometer a temperature of a calibration sample is determined from the ratio of a first reflectance and a second reflectance and the pyrometer is calibrated by assigning the determined temperature of the calibration sample with a thermal radiation signal measured by the pyrometer.

IPC Classes  ?

• G01K 15/00 - Testing or calibrating of thermometers
• G01K 5/00 - Measuring temperature based on the expansion or contraction of a material
• G01K 5/08 - Capillary tubes

Goods & Services

Optical sensors for measuring, monitoring and controlling the layer growing during the manufacture of optoelectronic components, devices and plants for measuring physical parameters during the manufacture of optoelectronic components, devices and plants for measuring, monitoring and controlling the layer growing during the manufacture of optoelectronic components, software for measuring, monitoring and controlling the manufacture of optoelectronic components.

Abstract

The invention relates to a device and a method for the measurement of the curvature of a surface (1), which is more exact and less expensive than prior art devices. The device comprises a light source (2) for the irradiation of a light beam (3) onto the surface (1), in which a birefingent element (4) is arranged between light source (2) and surface (1), in which furthermore a detector (5) is arranged for the detection of the partial beams (6,7), that are reflected from the surface (1), and at least one main axis (17) of the birefringent element (4) is positioned with respect to the light beam (3) of the light source (2) in such a way, that the light beam (3) of the light source (2) is split up into at least two parallel beams (6,7).

IPC Classes  ?

• G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
• G01B 11/30 - Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces

Goods & Services

Optical sensors for monitoring and controlling the layer growth during the manufacture of optoelectronic components, namely, light emitting diodes, laser diodes, photo diodes, transistors, integrated circuits, solar cells and semiconductors; devices and plants for measuring physical parameters during the manufacture of optoelectronic components, namely, optical sensors for measuring substrate bowing, growth rate, surface morphology, optical constants, temperature, reflectance, rotation speed and film composition; computer software for measuring, monitoring and controlling the manufacture of optoelectronic components