Examples are disclosed that relate to a pad for performing abrasive-free chemical planarization of a substrate. The pad comprises a polymer layer configured to contact the substrate during the abrasive-free chemical planarization. The polymer layer comprises a plurality of reactive units covalently bonded within polymer chains. Each reactive unit comprises a functional group comprising one or more of a complexing agent or a hydrolyzing agent for performing the abrasive-free chemical planarization. The polymer layer comprises a plurality of molded grooves each containing turbulence-creating structures configured to cause turbulence in a planarization solution within the grooves during a planarization process.
Examples are disclosed that relate to a pad for performing abrasive-free chemical planarization of a substrate. The pad comprises a polymer layer configured to contact the substrate during the abrasive-free chemical planarization. The polymer layer comprises a plurality of reactive units covalently bonded within polymer chains. Each reactive unit comprises a functional group comprising one or more of a complexing agent or a hydrolyzing agent for performing the abrasive-free chemical planarization. The polymer layer comprises a plurality of molded grooves each containing turbulence-creating structures configured to cause turbulence in a planarization solution within the grooves during a planarization process.
Examples are disclosed that relate to a planarization solution for abrasive-free planarization. The planarization solution comprises a hydrolyzing agent, a first chelator, and a second chelator.
Examples are disclosed that relate to a planarization solution for abrasive-free planarization. The planarization solution comprises a hydrolyzing agent, a first chelator, and a second chelator.
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate. In some examples, linear motion may be used for chemically planarizing.
A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B01D 11/04 - Solvent extraction of solutions which are liquid
C09G 1/18 - Other polishing compositions based on non-waxy substances on other substances
C22B 3/26 - Treatment or purification of solutions, e.g. obtained by leaching by liquid-liquid extraction using organic compounds
C22C 28/00 - Alloys based on a metal not provided for in groups
C22C 29/12 - Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides based on oxides
A pad for performing abrasive-free chemical planarization of a polycrystalline silicon (polysilicon) surface, the pad comprising a polymer layer incorporating a functional group reactive with polysilicon to remove silicon from the polysilicon surface.
A pad for performing abrasive-free chemical planarization of a polycrystalline silicon (polysilicon) surface, the pad comprising a polymer layer incorporating a functional group reactive with polysilicon to remove silicon from the polysilicon surface.
A method for determining an endpoint of a planarization process comprising planarizing a substrate material using a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured, with or without the assistance of reagents in a solution, to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. One or more parameters of the substrate material and/or the planarization pad are monitored during the planarization process. The endpoint of the planarization process is determined based upon the one or more parameters of the substrate material and/or the planarization pad, and an indication is output that the endpoint is reached.
B24B 37/013 - Devices or means for detecting lapping completion
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H01L 21/77 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
13.
DETERMINING AN ENDPOINT OF A PLANARIZATION PROCESS
A method for determining an endpoint of a planarization process comprising planarizing a substrate material using a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured, with or without the assistance of reagents in a solution, to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. One or more parameters of the substrate material and/or the planarization pad are monitored during the planarization process. The endpoint of the planarization process is determined based upon the one or more parameters of the substrate material and/or the planarization pad, and an indication is output that the endpoint is reached.
A pad for performing abrasive-free chemical planarization of a substrate comprises a polymer layer configured to contact the substrate during the abrasive-free chemical planarization. The polymer layer comprises a cerium species.
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
A pad for performing abrasive-free chemical planarization of a substrate comprises a polymer layer configured to contact the substrate during the abrasive-free chemical planarization. The polymer layer comprises a cerium species.
A pad for performing abrasive-free chemical planarization of a substrate comprises a polymer layer configured to contact the substrate during the abrasive-free chemical planarization. The polymer layer comprises a plurality of reactive units covalently bonded within polymer chains. Each reactive unit comprises a functional group comprising one or more of a complexing agent or a hydrolyzing agent for performing the abrasive-free chemical planarization.
A pad for performing abrasive-free chemical planarization of a substrate comprises a polymer layer configured to contact the substrate during the abrasive-free chemical planarization. The polymer layer comprises a plurality of reactive units covalently bonded within polymer chains. Each reactive unit comprises a functional group comprising one or more of a complexing agent or a hydrolyzing agent for performing the abrasive-free chemical planarization.
B24B 37/24 - Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
B32B 3/30 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layerLayered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form characterised by a layer with cavities or internal voids characterised by a layer formed with recesses or projections, e.g. grooved, ribbed
B32B 5/18 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer containing foamed or specifically porous material
B32B 5/32 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by the presence of two or more layers which comprise fibres, filaments, granules, or powder, or are foamed or specifically porous both layers being foamed or specifically porous
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate. In some examples, linear motion may be used for chemically planarizing.
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate. In some examples, linear motion may be used for chemically planarizing.
A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.
A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.
Examples are disclosed that relate to planarizing substrates without use of an abrasive. One example provides a method of chemically planarizing a substrate, the method comprising introducing an abrasive-free planarization solution onto a porous pad, contacting the substrate with the porous pad while moving the porous pad and substrate relative to one another such that higher portions of the substrate contact the porous pad and lower portions of the substrate do not contact the porous pad, and removing material from the higher portions of the substrate via contact with the porous pad to reduce a height of the higher portions of the substrate relative to the lower portions of the substrate.
