Zadient Technologies SAS

France

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2025 June 1
2025 (YTD) 5
2024 11
2023 6
2022 10
IPC Class
C30B 29/36 - Carbides 25
C23C 16/32 - Carbides 16
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure 14
C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials 13
C30B 23/02 - Epitaxial-layer growth 12
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Status
Pending 8
Registered / In Force 24

1.

CVD SIC PRODUCTION REACTOR FOR THE PRODUCTION OF SIC GRANULES, SYSTEM AND METHOD FOR THE PRODUCTION OF SIC GRANULES

      
Application Number EP2024086206
Publication Number 2025/125564
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-19
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Crössmann, Ivo

Abstract

The present invention refers to a SiC and Chlorosilane production system 2540, comprising at least one CVD SiC production reactor 850, in particular SiC fluidized bed reactor 850a, in particular according to claim 9, and a Chlorosilane production unit 2550, wherein the Chlorosilane production unit 2550 comprises at least a bed reactor 2416, in particular a fixed bed reactor or a fluidized bed reactor, for generating Chlorosilanes by reacting at least one fraction of the vent gas mixture provided via the vent gas outlet 216 of the CVD SiC production reactor 850 and Si, wherein further fractions of the vent gas mixture at least comprise H2 and a C-bearing molecule, in particular methane, and wherein Si is provided as solid 2398 inside the bed reactor 2416.

IPC Classes  ?

2.

METHOD AND SYSTEM FOR SIC PRODUCTION AND IMPROVED VENT GAS RECYCLING

      
Application Number EP2023074482
Publication Number 2025/051358
Status In Force
Filing Date 2023-09-06
Publication Date 2025-03-13
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schley, Michael
  • Pfister, Jörg
  • Schaaff, Friedrich
  • Fuchs, Markus

Abstract

The present invention refers to a method for the production of SiC. The method at least comprises the steps: Providing a vent gas mixture (2400), wherein the vent gas mixture (2400) is preferably generated during SiC production and highly preferably generated during CVD SiC production, wherein at least one fraction of the vent gas mixture is HCI and/or STC, wherein further fractions (2401) of the vent gas mixture (2400) at least comprise H2 (2402) and a C-bearing-molecule, in particular methane, (2404), Generating Chlorosilanes (2394) by reacting the at least one fraction of the vent gas mixture and Si (2398), Forwarding at least the generated Chlorosilanes (2394) into a process chamber (856a) of the CVD SiC production reactor (850a), and Forwarding at least one C-bearing molecule into the CVD SiC production reactor (850a), Producing SiC inside the process chamber (856a) of the CVD SiC production reactor (850a) by depositing Si from the Chlorosilanes and C from the at least one C-bearing molecule on at least one deposition surface or Forwarding at least the generated Chlorosilanes (2394) into a process chamber (856b) of a further CVD SiC production reactor (850b), and Forwarding at least one C-bearing molecule into the further CVD SiC production reactor (850b), Producing SiC inside the process chamber (856) of the further CVD SiC production reactor (850b) by depositing Si from the Chlorosilanes and C from the at least one C- bearing molecule on at least one deposition surface.

IPC Classes  ?

  • C01B 32/963 - Preparation from compounds containing silicon
  • B01D 3/00 - Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
  • C04B 35/565 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides based on silicon carbide
  • C23C 16/32 - Carbides
  • C01B 32/984 - Preparation from elemental silicon

3.

METHOD AND SYSTEM FOR SIC PRODUCTION AND IMPROVED VENT GAS RECYCLING

      
Application Number EP2023074485
Publication Number 2025/051359
Status In Force
Filing Date 2023-09-06
Publication Date 2025-03-13
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schley, Michael
  • Pfister, Jörg
  • Schaaff, Friedrich

Abstract

The present invention refers to a method for the production of SiC. The method at least comprises the steps: Providing a vent gas mixture (2400), wherein the vent gas mixture (2400) is preferably generated during SiC production and highly preferably generated during CVD SiC production, wherein at least one fraction of the vent gas mixture is HCI and/or STC, wherein further fractions (2401) of the vent gas mixture (2400) at least comprise H2 (2402) and a C-bearing-molecule, in particular methane, (2404), Generating Chlorosilanes (2394) by reacting the at least one fraction of the vent gas mixture and Si (2398), Forwarding at least the generated Chlorosilanes (2394) into a process chamber (856a) of the CVD SiC production reactor (850a), and Forwarding at least one C-bearing molecule into the CVD SiC production reactor (850a), Producing SiC inside the process chamber (856a) of the CVD SiC production reactor (850a) by depositing Si from the Chlorosilanes and C from the at least one C-bearing molecule on at least one deposition surface or Forwarding at least the generated Chlorosilanes (2394) into a process chamber (856b) of a further CVD SiC production reactor (850b), and Forwarding at least one C-bearing molecule into the further CVD SiC productio reactor (850b), Producing SiC inside the process chamber (856) of the further CVD SiC production reactor (850b) by depositing Si from the Chlorosilanes and C from the at least one C- bearing molecule on at least one deposition surface.

IPC Classes  ?

4.

METHOD AND SYSTEM FOR SIC PRODUCTION AND IMPROVED VENT GAS RECYCLING

      
Application Number EP2024074973
Publication Number 2025/051945
Status In Force
Filing Date 2024-09-06
Publication Date 2025-03-13
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schley, Michael
  • Pfister, Jörg
  • Schaaff, Friedrich
  • Fuchs, Markus

Abstract

The present invention refers to a method for the production of SiC. The method at least comprises the steps: Providing a vent gas mixture (2400), wherein the vent gas mixture (2400) is preferably generated during SiC production and highly preferably generated during CVD SiC production, wherein at least one fraction of the vent gas mixture is HCI and/or STC, wherein further fractions (2401) of the vent gas mixture (2400) at least comprise H2 (2402) and a C-bearing-molecule, in particular methane, (2404), Generating Chlorosilanes (2394) by reacting the at least one fraction of the vent gas mixture and Si (2398), Forwarding at least the generated Chlorosilanes (2394) into a process chamber (856a) of the CVD SiC production reactor (850a), and Forwarding at least one C-bearing molecule into the CVD SiC production reactor (850a), Producing SiC inside the process chamber (856a) of the CVD SiC production reactor (850a) by depositing Si from the Chlorosilanes and C from the at least one C-bearing molecule on at least one deposition surface or Forwarding at least the generated Chlorosilanes (2394) into a process chamber (856b) of a further CVD SiC production reactor (850b), and Forwarding at least one C-bearing molecule into the further CVD SiC production reactor (850b), Producing SiC inside the process chamber (856) of the further CVD SiC production reactor (850b) by depositing Si from the Chlorosilanes and C from the at least one C- bearing molecule on at least one deposition surface.

IPC Classes  ?

  • C01B 32/963 - Preparation from compounds containing silicon
  • B01D 3/00 - Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
  • C04B 35/565 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides based on silicon carbide
  • C23C 16/32 - Carbides
  • C01B 32/984 - Preparation from elemental silicon
  • B01D 3/14 - Fractional distillation

5.

METHOD AND SYSTEM FOR SIC PRODUCTION AND IMPROVED VENT GAS RECYCLING

      
Application Number EP2024074980
Publication Number 2025/051951
Status In Force
Filing Date 2024-09-06
Publication Date 2025-03-13
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schley, Michael
  • Pfister, Jörg
  • Schaaff, Friedrich

Abstract

The present invention refers to a method for the production of SiC. The method at least comprises the steps: Providing a vent gas mixture (2400), wherein the vent gas mixture (2400) is preferably generated during SiC production and highly preferably generated during CVD SiC production, wherein at least one fraction of the vent gas mixture is HCl and/or STC, wherein further fractions (2401) of the vent gas mixture (2400) at least comprise H2 (2402) and a C-bearing-molecule, in particular methane, (2404), Generating Chlorosilanes (2394) by reacting the at least one fraction of the vent gas mixture and Si (2398), Forwarding at least the generated Chlorosilanes (2394) into a process chamber (856a) of the CVD SiC production reactor (850a), and Forwarding at least one C-bearing molecule into the CVD SiC production reactor (850a), Producing SiC inside the process chamber (856a) of the CVD SiC production reactor (850a) by depositing Si from the Chlorosilanes and C from the at least one C-bearing molecule on at least one deposition surface or Forwarding at least the generated Chlorosilanes (2394) into a process chamber (856b) of a further CVD SiC production reactor (850b), and Forwarding at least one C-bearing molecule into the further CVD SiC production reactor (850b), Producing SiC inside the process chamber (856) of the further CVD SiC production reactor (850b) by depositing Si from the Chlorosilanes and C from the at least one C- bearing molecule on at least one deposition surface.

IPC Classes  ?

6.

MULTI-SUBSTRATE WAFER WITH RADIALLY GROWN SUBSTRATES

      
Application Number EP2023057972
Publication Number 2024/199633
Status In Force
Filing Date 2023-03-28
Publication Date 2024-10-03
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Richter, Jan
  • Schaaf, Friedrich

Abstract

The present invention refers to a multi-substrate wafer (2320). Said multi-substrate wafer (2320) comprises at least a first substrate (2317) and a second substrate, wherein the first substrate (2317) and the second substrate (2322) are bonded together, wherein the first substrate (2317) is a monocrystalline SiC crystal (2317), wherein the second substrate (2322) comprises polycrystalline 3C-SiC, wherein the at least 30% [volume], in particular at least 50% [volume] and preferably at least 70% [volume], of the polycrystalline 3C-SiC is grown in radial direction around at least one or exactly one central element (857), wherein the central element (857) preferably comprises or consists of SiC, wherein the second substrate (2322) has a specific electrical resistance of less than 15mOhmcm, wherein the second substrate (2322) is at least nitrogen doped, wherein more than 1018nitrogen atoms per cm3 are present inside the second substrate (2322) due to doping.

IPC Classes  ?

7.

MULTI-SUBSTRATE WAFER WITH RADIALLY GROWN SUBSTRATES

      
Application Number EP2024057950
Publication Number 2024/200350
Status In Force
Filing Date 2024-03-25
Publication Date 2024-10-03
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Richter, Jan
  • Schaaf, Friedrich

Abstract

The present invention refers to a multi-substrate wafer (2320). Said multi-substrate wafer (2320) comprises at least a first substrate (2317) and a second substrate, wherein the first substrate (2317) and the second substrate (2322) are bonded together, wherein the first substrate (2317) is a monocrystalline SiC crystal (2317), wherein the second substrate (2322) comprises polycrystalline 3C-SiC, wherein the at least 30% [volume], in particular at least 50% [volume] and preferably at least 70% [volume], of the polycrystalline 3C-SiC is grown in radial direction around at least one or exactly one central element (857), wherein the central element (857) preferably comprises or consists of SiC, wherein the second substrate (2322) has a specific electrical resistance of less than 15mOhmcm, wherein the second substrate (2322) is at least nitrogen doped, wherein more than 1018 nitrogen atoms per cm3 are present inside the second substrate (2322) due to doping.

IPC Classes  ?

8.

ZADIENT

      
Application Number 1782827
Status Registered
Filing Date 2023-12-15
Registration Date 2023-12-15
Owner Zadient Technologies SAS (France)
NICE Classes  ? 09 - Scientific and electric apparatus and instruments

Goods & Services

Semiconductors; semiconductor chips; semiconductor wafers; semiconductor elements; semiconductor devices; structured semi-conductor wafers; ingots being prepared substrates for the manufacture of semi-conductors; electric and electronic components.

9.

Method and Device for Producing a SiC Solid Material

      
Application Number 18266268
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-03-21
Owner Zadient Technologies SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C01B 32/956 - Silicon carbide
  • C23C 16/32 - Carbides
  • C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
  • C23C 16/52 - Controlling or regulating the coating process
  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides

10.

Method and Device for Producing a SiC Solid Material

      
Application Number 18266261
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-02-22
Owner Zadient Technologies SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

IPC Classes  ?

  • C30B 29/36 - Carbides
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases

11.

Method and Device for Producing a SiC Solid Material

      
Application Number 18266260
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-02-08
Owner Zadient Technologies SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C23C 16/32 - Carbides
  • C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
  • C23C 16/52 - Controlling or regulating the coating process
  • C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 29/36 - Carbides
  • C01B 32/977 - Preparation from organic compounds containing silicon

12.

Method and Device for Producing a SiC Solid Material

      
Application Number 18266176
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-02-01
Owner Zadient Technologies SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

IPC Classes  ?

  • C01B 32/956 - Silicon carbide
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C30B 29/36 - Carbides

13.

Method and Device for Producing a SiC Solid Material

      
Application Number 18266227
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-02-01
Owner Zadient Technologies SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas comprising Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C23C 16/32 - Carbides
  • C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
  • C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C 16/52 - Controlling or regulating the coating process
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
  • C23C 16/54 - Apparatus specially adapted for continuous coating

14.

Method and Device for Producing a SiC Solid Material

      
Application Number 18266264
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-02-01
Owner Zadient Technologies SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1700° C.g. 1)

IPC Classes  ?

  • C23C 16/32 - Carbides
  • C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
  • C23C 16/52 - Controlling or regulating the coating process
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C01B 32/977 - Preparation from organic compounds containing silicon

15.

Method and Device for Producing a SiC Solid Material

      
Application Number 18266205
Status Pending
Filing Date 2021-12-13
First Publication Date 2024-01-25
Owner Zadient Technologies SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1800° C.

IPC Classes  ?

  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C30B 29/36 - Carbides
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate

16.

METHOD AND DEVICE FOR PRODUCING A SiC SOLID MATERIAL

      
Application Number EP2023068962
Publication Number 2024/013049
Status In Force
Filing Date 2023-07-10
Publication Date 2024-01-18
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Richter, Jan

Abstract

The before mentioned object is solved by a SiC production reactor (850), wherein the SiC production reactor (850) at least comprises: A process chamber (856), wherein the process chamber (856) is at least surrounded by a bottom wall section, in particular a base plate (862) or base plate wall section, a side wall section (864a) and a top wall section (864b), a gas inlet unit (866) for feeding one feed-medium or multiple feed-mediums into a reaction space of the process chamber (856) for generating a source medium, wherein the gas inlet unit (866) is coupled with at least one feed-medium source (851), wherein a Si and C feed-medium source (851) is configured to provide at least Si and C, in particular SiCl3(CH3), and wherein a carrier gas feed-medium source (853) provides a carrier gas, in particular H2, or wherein the gas inlet unit (866) is coupled with at least two feed-medium sources (851, 852), wherein a Si feed medium source (851) is configured to provide at least Si and wherein a C feed medium source (852) provides at least C, in particular natural gas, Methane, Ethane, Propane, Butane and/or Acetylene, and wherein a carrier gas medium source (853) is configured to provide a carrier gas, in particular H2, at least one SiC growth substrate surface (2204) is formed inside the process chamber (856) by a wall surface section (2270), a heating unit (2230) for non-electrically generation of heat is provided, wherein the heating unit (2230) is configured for heating at least the SiC growth substrate surface (2204) to a temperature above 1300°C.

IPC Classes  ?

  • C30B 29/36 - Carbides
  • C30B 25/12 - Substrate holders or susceptors
  • C01B 32/956 - Silicon carbide
  • C23C 16/32 - Carbides
  • C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

17.

Improved Furnace Apparatus for Crystal Production

      
Application Number 18037672
Status Pending
Filing Date 2021-11-19
First Publication Date 2023-12-21
Owner Zadient Technologies SAS (France)
Inventor
  • Ceran, Kagan
  • Marsan, Didier
  • Syrkin, Alexander
  • Benamara, Omar
  • Jebara, Moaine

Abstract

The disclosure refers to a furnace apparatus, in particular a furnace apparatus for growing crystals, in particular for growing SiC crystals. The furnace apparatus includes a furnace unit, where the furnace unit includes a furnace housing, at least one crucible unit where the crucible unit is arranged inside the furnace housing, where the crucible unit includes a crucible housing, where the housing has an outer surface and an inner surface, where the inner surface at least partially defines a crucible volume, where a receiving space for receiving a source material is arranged or formed inside the crucible volume, where a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume, and at least one heating unit for heating the source material, where the receiving space for receiving the source material is at least in parts arranged between the heating unit and the seed holder unit.

IPC Classes  ?

  • C30B 23/06 - Heating of the deposition chamber, the substrate, or the materials to be evaporated
  • C30B 29/36 - Carbides
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials

18.

ZADIENT

      
Serial Number 79392560
Status Registered
Filing Date 2023-12-15
Registration Date 2025-04-22
Owner Zadient Technologies SAS (France)
NICE Classes  ? 09 - Scientific and electric apparatus and instruments

Goods & Services

Semiconductors; semiconductor chips; semiconductor wafers; semiconductor power elements; semiconductor devices; structured semi-conductor wafers

19.

METHOD FOR PRODUCING AT LEAST ONE CRACK-FREE SiC PIECE

      
Application Number EP2023063308
Publication Number 2023/222787
Status In Force
Filing Date 2023-05-17
Publication Date 2023-11-23
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Schaaf, Friedrich

Abstract

The present invention refers to a SiC carrier wafer (2322), in particular crack-free SiC carrier wafer (2322), wherein the SiC carrier wafer (2322) has a diameter of at least 7,5cm, wherein the SiC carrier wafer (2322) has a height between 200µm and 500µm, wherein the SiC carrier wafer (2322) comprises at least one or exactly one inner section (2600), in particular one central inner section (2600), and wherein the SiC carrier wafer (2322) comprises an outer section (2602), wherein the outer section (2602) surrounds the inner section (2600), wherein the inner section (2600) consists of a part of a SiC growth substrate (857), wherein the inner section (2600) is formed by a crystal structure, wherein the crystal structure of the inner section (2600) is predominantly formed by a 3C crystal structure, and wherein the outer section (2602) is formed by a crystal structure, wherein the crystal structure of the outer section (2602) is predominantly formed by a 3C crystal structure and comprises crystallites (2414) extending in length direction of the individual crystallite (2414) more than 5µm, in particular more than 10µm and preferably more than 20µm and particular preferably more than 50 µm and most preferably up to 500 µm or up to 300 µm, wherein a bow of the SiC carrier wafer (2322) is below 50µm, in particular below 20µm, and/or wherein a warp of the SiC carrier wafer (2322) is below 50µm, in particular below 20µm, wherein the crystal structure of the inner section (2600) and the crystal structure of the outer section (2602), in particular the 3C crystal structure of the inner section (2600) and the 3C crystal structure of the outer section (2602), are Nitrogen doped, in particular more than 2000ppba nitrogen, and comprises an electric resistivity < 0.03 Ohm cm, preferably < 0.02 Ohm cm and most preferably < 0.01 Ohm cm.

IPC Classes  ?

20.

SiC GROWTH SUBSTRATE, CVD REACTOR AND METHOD FOR THE PRODUCTION OF SiC

      
Application Number EP2023063306
Publication Number 2023/222785
Status In Force
Filing Date 2023-05-17
Publication Date 2023-11-23
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Schaaf, Friedrich

Abstract

The present invention concerns a SiC growth substrate for growing SiC in a CVD reactor. The SiC growth substrate comprises a main body, a first power connection (and a second power connection, wherein the main body has a main body length, wherein the main body length (ML) extends between the first power connection and the second power connection, wherein the first power connection is configured to conduct power into the main body for heating the main body and wherein the second power connection is configured to conduct electric power conducted via the first power connection into the main body out of the main body, wherein the main body forms a deposition surface for deposition of SiC for growing a SiC crust, wherein the main body is configured to resist forces generated during growth of the SiC crust having a minimal thickness of at least 1cm for preventing cracking of the main body due to the generated forces at least in a defined volume section of the main body, wherein the defined volume section is formed between a first plane and a second plane, wherein the first plane is perpendicular to the main body length and wherein the second plane is perpendicular to the main body length, wherein the distance between the first plane and the second plane is at least 5% of the main body length.

IPC Classes  ?

21.

IMPROVED FURNACE APPARATUS FOR CRYSTAL PRODUCTION WITH SEED HOLDER REPOSITIONING UNIT

      
Application Number EP2023063313
Publication Number 2023/222790
Status In Force
Filing Date 2023-05-17
Publication Date 2023-11-23
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Richter, Jan

Abstract

The present invention refers to a furnace apparatus comprising a furnace unit, wherein the furnace unit comprises a furnace housing with an outer surface and an inner surface, at least one crucible unit, wherein the crucible unit is arranged inside the furnace housing, wherein the crucible unit comprises a crucible housing, wherein the crucible housing has an outer surface and an inner surface, wherein the inner surface at least partially defines a crucible volume, wherein a receiving space for receiving a source material is arranged or formed inside the crucible volume, wherein a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume, wherein the furnace housing inner wall and the crucible housing outer wall define a furnace volume, at least one heating unit for heating the source material, wherein the receiving space for receiving the source material is at least in parts arranged below the seed holder unit, characterized in that a position adjustment unit for adjustment of the position of the seed holder unit during operation of the furnace apparatus is provided, wherein the position adjustment unit is configured to increase the distance between the seed holder unit and the receiving space by moving the seed holder unit away from the receiving space.

IPC Classes  ?

22.

ZADIENT

      
Application Number 018895407
Status Registered
Filing Date 2023-06-30
Registration Date 2023-10-12
Owner Zadient Technologies SAS (France)
NICE Classes  ? 09 - Scientific and electric apparatus and instruments

Goods & Services

Semiconductors; Semiconductor chips; Semiconductor wafers; Semiconductor elements; Semiconductor devices; Structured semi-conductor wafers; Ingots being prepared substrates for the manufacture of semi-conductors; Electric and electronic components.

23.

METHOD AND DEVICE FOR PRODUCING A SIC SOLID MATERIAL

      
Application Number EP2021085482
Publication Number 2022/123078
Status In Force
Filing Date 2021-12-13
Publication Date 2022-06-16
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • C01B 32/963 - Preparation from compounds containing silicon

24.

SIC SOLID MATERIAL, METHOD AND DEVICE FOR PRODUCING A SIC SOLID MATERIAL

      
Application Number EP2021085493
Publication Number 2022/123080
Status In Force
Filing Date 2021-12-13
Publication Date 2022-06-16
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si; introducing at least one second source gas into the process chamber, the second source gas comprising C; electrically energizing at least one separator element disposed in the process chamber to heat the separator element; setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • C23C 16/32 - Carbides

25.

PVT SOURCE MATERIAL AND PRODUCTION METHOD THEREOF, METHOD AND SYSTEM FOR PRODUCING A SIC CRYSTAL

      
Application Number EP2021085513
Publication Number 2022/123084
Status In Force
Filing Date 2021-12-13
Publication Date 2022-06-16
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas compris- ing Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduc- tion of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range be- tween 1300°C and 1800°C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • C23C 16/32 - Carbides

26.

METHOD AND DEVICE FOR PRODUCING A SIC SOLID MATERIAL

      
Application Number EP2021085393
Publication Number 2022/123072
Status In Force
Filing Date 2021-12-13
Publication Date 2022-06-16
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200pm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1700°C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • C23C 16/32 - Carbides
  • C30B 25/10 - Heating of the reaction chamber or the substrate
  • C01B 32/963 - Preparation from compounds containing silicon

27.

METHOD AND DEVICE FOR PRODUCING A SIC SOLID MATERIAL

      
Application Number EP2021085479
Publication Number 2022/123077
Status In Force
Filing Date 2021-12-13
Publication Date 2022-06-16
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate

28.

METHOD AND DEVICE FOR PRODUCING A SIC SOLID MATERIAL

      
Application Number EP2021085492
Publication Number 2022/123079
Status In Force
Filing Date 2021-12-13
Publication Date 2022-06-16
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si; introducing at least one second source gas into the process chamber, the second source gas comprising C; electrically energizing at least one separator element disposed in the process chamber to heat the separator element; setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • C23C 16/32 - Carbides

29.

METHOD AND DEVICE FOR PRODUCING A SIC SOLID MATERIAL

      
Application Number EP2021085512
Publication Number 2022/123083
Status In Force
Filing Date 2021-12-13
Publication Date 2022-06-16
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Crössmann, Ivo
  • Schaaff, Friedrich
  • Tiefel, Hilmar Richard
  • Ceran, Kagan

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably comprises at least the following steps: Introducing at least a first source gas into a process chamber, said first source gas comprising Si, introducing at least one second source gas into the process chamber, the second source gas comprising C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200µm/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300°C and 1800°C.

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
  • C30B 25/08 - Reaction chambersSelection of materials therefor
  • C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
  • C30B 25/18 - Epitaxial-layer growth characterised by the substrate
  • C23C 16/32 - Carbides
  • B01D 53/00 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols
  • C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

30.

IMPROVED FURNACE APPARATUS FOR CRYSTAL PRODUCTION

      
Application Number EP2021082331
Publication Number 2022/106635
Status In Force
Filing Date 2021-11-19
Publication Date 2022-05-27
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Marsan, Didier
  • Syrkin, Alexander
  • Benamara, Omar
  • Jebara, Moaine

Abstract

The present invention refers to a furnace apparatus (100), in particular a furnace apparatus (100) for growing crystals, in particular for growing SiC crystals. The furnace apparatus comprises a furnace unit (102), wherein the furnace unit (102) comprises a furnace housing (108) at least one crucible unit (106) wherein the crucible unit (106) is arranged inside the furnace housing (108), wherein the crucible unit (106) comprises a crucible housing (110), wherein the housing (110) has an outer surface (112) and an inner surface (114), wherein the inner surface (114) at least partially defines a crucible volume (116), wherein a receiving space (118) for receiving a source material (120) is arranged or formed inside the crucible volume (116), wherein a seed holder unit (122) for holding a defined seed wafer (18) is arranged inside the crucible volume (116), and at least one heating unit (124) for heating the source material (120), wherein the receiving space (118) for receiving the source material (120) is at least in parts arranged between the heating unit (124) and the seed holder unit (122).

IPC Classes  ?

  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • C30B 29/36 - Carbides
  • C30B 23/02 - Epitaxial-layer growth
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials

31.

IMPROVED FURNACE APPARATUS FOR CRYSTAL PRODUCTION

      
Application Number EP2021082340
Publication Number 2022/106639
Status In Force
Filing Date 2021-11-19
Publication Date 2022-05-27
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Marsan, Didier
  • Syrkin, Alexander
  • Benamara, Omar
  • Jebara, Moaine

Abstract

The present invention refers to a furnace apparatus (100), in particular a furnace apparatus (100) for growing crystals, in particular for growing SiC crystals. The furnace apparatus comprises a furnace unit (102), wherein the furnace unit (102) comprises a furnace housing (108) at least one crucible unit (106) wherein the crucible unit (106) is arranged inside the furnace housing (108), wherein the crucible unit (106) comprises a crucible housing (110), wherein the housing (110) has an outer surface (112) and an inner surface (114), wherein the inner surface (114) at least partially defines a crucible volume (116), wherein a receiving space (118) for receiving a source material (120) is arranged or formed inside the crucible volume (116), wherein a seed holder unit (122) for holding a defined seed wafer (18) is arranged inside the crucible volume (116), and at least one heating unit (124) for heating the source material (120), wherein the receiving space (118) for receiving the source material (120) is at least in parts arranged between the heating unit (124) and the seed holder unit (122).

IPC Classes  ?

  • C30B 23/02 - Epitaxial-layer growth
  • C30B 29/36 - Carbides
  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials

32.

IMPROVED FURNACE APPARATUS FOR CRYSTAL PRODUCTION

      
Application Number EP2021082345
Publication Number 2022/106642
Status In Force
Filing Date 2021-11-19
Publication Date 2022-05-27
Owner ZADIENT TECHNOLOGIES SAS (France)
Inventor
  • Ceran, Kagan
  • Marsan, Didier
  • Syrkin, Alexander
  • Benamara, Omar
  • Jebara, Moaine

Abstract

The present invention refers to a furnace apparatus (100), in particular a furnace apparatus (100) for growing crystals, in particular for growing SiC crystals. The furnace apparatus comprises a furnace unit (102), wherein the furnace unit (102) comprises a furnace housing (108) at least one crucible unit (106) wherein the crucible unit (106) is arranged inside the furnace housing (108), wherein the crucible unit (106) comprises a crucible housing (110), wherein the housing (110) has an outer surface (112) and an inner surface (114), wherein the inner surface (114) at least partially defines a crucible volume (116), wherein a receiving space (118) for receiving a source material (120) is arranged or formed inside the crucible volume (116), wherein a seed holder unit (122) for holding a defined seed wafer (18) is arranged inside the crucible volume (116), and at least one heating unit (124) for heating the source material (120), wherein the receiving space (118) for receiving the source material (120) is at least in parts arranged between the heating unit (124) and the seed holder unit (122).

IPC Classes  ?

  • C30B 23/02 - Epitaxial-layer growth
  • C30B 29/36 - Carbides
  • C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • F27B 14/00 - Crucible or pot furnacesTank furnaces
  • C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials