22) provided on the single-crystal surface of the substrate. A buffer layer containing a mixed phase of a crystal phase and an amorphous phase is interposed between the substrate and the orientation control film.
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
22) as a main component; and a functional thin film, which is provided on the crystalline orientation control film. The laminated structure further includes a buffer layer which includes a mixed phase of a crystal phase and an amorphous phase, the buffer layer intervening between the substrate and the orientation control film. Furthermore, the degree of crack penetration defined by the ratio of the depth in the vertical direction of the crack to the film thickness of the functional thin film is 80% or less.
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
A film structure (10) includes a Si layer (12a), a ZrO2 layer (12b) which is a buffer film containing ZrO2 and formed on the Si layer (12a), and a piezoelectric film (11) formed on the ZrO2 layer (12b). The Si layer (12a) is an SOI layer in a Si substrate or an SOI substrate including a base made from a Si substrate, an insulating layer on the base, and an SOI layer made from a Si film on the insulating layer. A polarization direction of the piezoelectric film (11) is preferentially oriented perpendicularly to the substrate.
According to the present invention, there is provided a film structure including: a substrate; a zirconia-containing film; a sacrificial layer; and a piezoelectric film in this order, in which the substrate, the zirconia-containing film, the sacrificial layer, and the piezoelectric film are each single-crystallized, and the sacrificial layer is able to be selectively removed, a method for producing the film structure, and an apparatus for producing the film structure.
H10N 30/00 - Piezoelectric or electrostrictive devices
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
A film structure (10) includes a Si layer (12a), a ZrO2 layer (12b), which is a buffer film containing ZrO2, formed on the Si layer (12a), and a piezoelectric film (11) formed on the ZrO2 layer (12b). The Si layer 12a is an SOI layer on a Si(100) substrate or an SOI substrate including a base made of a Si substrate, an insulating layer on the base, and an SOI layer made of a Si(100) film on the insulating layer. The piezoelectric film (11) includes c-axis oriented LiNbO3 or LiTaO3.
23333131 mode based on a piezoelectric or inverse piezoelectric effect, thereby displacing the movable part, and the angle θ between the in-plane direction in which the displacement of the movable part becomes maximum and the <100> orientation of the piezoelectric film is within ±11.5°.
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H10N 30/87 - Electrodes or interconnections, e.g. leads or terminals
A membrane structure (10) includes: a substrate being a Si substrate or an SOI substrate; a buffer film containing ZrO2 and formed on the substrate; and a piezoelectric film (11) formed on the buffer film, a polarization direction in the piezoelectric film (11) being preferentially oriented parallel to the substrate.
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H10N 30/40 - Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
H10N 30/85 - Piezoelectric or electrostrictive active materials
22 that has been epitaxially grown on the substrate (11). The thickness of this buffer film (12) is 43 to 100 nm and the ratio of thickness of the buffer film (12) to the thickness of the metal film (13) is 0.29 to 0.67.
H10N 30/074 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
A piezoelectric film integrated device include a substrate; a first electrode provided on the substrate; a second electrode provided on the substrate; a first monocrystalline piezoelectric film provided on the first electrode; a second monocrystalline piezoelectric film provided on the second electrode and having a crystal structure different from a crystal structure of the first monocrystalline piezoelectric film; a third electrode provided on the first monocrystalline piezoelectric film; and a fourth electrode provided on the second monocrystalline piezoelectric film.
A piezoelectric film integrated device includes a substrate; an electrode provided on the substrate; a first piezoelectric element that is provided on the electrode and includes a first monocrystalline piezoelectric film and a first electrode film superimposed on the first monocrystalline piezoelectric film; and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film and a second electrode film superimposed on the second monocrystalline piezoelectric film.
H10N 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups
B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
H10N 30/00 - Piezoelectric or electrostrictive devices
H10N 30/50 - Piezoelectric or electrostrictive devices having a stacked or multilayer structure
H10N 30/057 - Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes
The present invention provides a film structure (10) which sequentially comprises a substrate (1), a film (2) containing zirconia, a sacrificial layer (3) and a piezoelectric film (4) in this order, wherein: the substrate, the film containing zirconia, the sacrificial layer and the piezoelectric film are respectively single-crystallized; and the sacrificial layer can be selectively removed. The present invention also provides: a method for producing this film structure; and an apparatus for producing this film structure.
H01L 41/29 - Forming electrodes, leads or terminal arrangements
H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H01L 39/12 - Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details characterised by the material
H01L 41/08 - Piezo-electric or electrostrictive elements
a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).
H01L 41/319 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H10N 30/079 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H10N 30/87 - Electrodes or interconnections, e.g. leads or terminals
H10N 30/076 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
H10N 30/078 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
17.
Electrode, ferroelectric ceramics and manufacturing method thereof
H01L 41/29 - Forming electrodes, leads or terminal arrangements
H01L 41/318 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
18.
Thermal poling method, piezoelectric film and manufacturing method of same, thermal poling apparatus, and inspection method of piezoelectric property
A thermal poling method in which a poling treatment can be performed easily by a dry process. The poling treatment is performed on a PZT film by performing a heat treatment on the PZT film under a pressurized oxygen atmosphere at a temperature of 400° C. or more and 900° C. or less. The PZT film before the heat treatment has a single-domain crystal structure, and the PZT film after the heat treatment has a multi-domain crystal structure.
H01L 41/257 - Treating devices or parts thereof to modify a piezo-electric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
H01L 41/318 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
patents
