A resin-coated substrate 100 includes a substrate 20 having an opening 10, and a resin coating 30 covering the substrate 20. The resin coating 30 has a portion 30A covering a region around the opening 10, and a hanging portion 30B hanging toward the inside of the opening 10.
This magnet component includes a bond magnet and a metal member. The bonded magnet contains magnet powder and a cured product of a resin composition. The magnetic powder is an alloy containing samarium, iron, and nitrogen. The resin composition contains an epoxy resin and a phenol resin. The cured product mixed with the magnet powder binds a plurality of magnet particles constituting the magnet powder to each other. The bond magnet is directly bonded to the surface of the metal member by the cured product.
H01F 1/08 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
H01F 41/02 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformersApparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils or magnets
3.
ASSISTANCE DEVICE, ASSISTANCE METHOD, AND ASSISTANCE PROGRAM
The present invention provides an assistance device, an assistance method, and an assistance program that are for assisting operation of a crystal growth furnace. An assistance device according to the present invention comprises: a calculation unit that outputs a temperature distribution of a crystal surface on the basis of temperature data measured in a crystal growth furnace, information indicating the position and output of a heating device which heats the crystal growth furnace, and information indicating the position of the crystal surface in the crystal growth furnace; and a display unit that displays the temperature distribution of the crystal surface output by the calculation unit.
C08L 33/06 - Homopolymers or copolymers of esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
5.
RESIN COMPOSITION, RESIN FILM, LAMINATE, METHOD FOR PRODUCING LAMINATE, PRINTED WIRING BOARD, AND SEMICONDUCTOR PACKAGE
C08L 33/06 - Homopolymers or copolymers of esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
A resin-coated substrate 100 comprising a substrate 20 having an opening 10 and a resin coating 30 covering the substrate 20, the resin coating 30 having a portion 30A that covers the region around the opening 10, and a hanging portion 30B that hangs toward the inside of the opening 10.
A resin composition for molding includes: an epoxy resin containing at least one of a phenol novolac type epoxy resin with an epoxy equivalent of 156 g/eq to 250 g/eq and a cresol novolac type epoxy resin with an epoxy equivalent of 156 g/eq to 250 g/eq; an active ester compound; and an inorganic filler.
This bonded magnet comprises: a magnet part containing a magnet powder (plurality of magnet particles) and a resin composition; and a resin-rich layer that contains the resin composition and that covers a part or the entire magnet part. The magnetic powder is an alloy containing samarium, iron, and nitrogen. The resin composition contains a heat-curable resin. The unit of the content of the resin composition in each of the magnet part and the resin-rich layer is mass%. The content of the resin composition in the resin-rich layer is larger than the content of the resin composition in the magnet part.
H01F 1/08 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together
H01F 1/059 - Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 and Va elements, e.g. Sm2Fe17N2
A curable resin composition containing a curable resin, wherein the metal content is 200 mass ppm or less based on the total solid content of the curable resin composition.
01 - Chemical and biological materials for industrial, scientific and agricultural use
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
Industrial chemicals; metal surface treatment agents;
chemical preparations for use in treating metal surfaces;
chemical coatings for metal parts; coating agents, except
paints. Treatment and coating of metal surfaces; treatment of metal
parts to prevent corrosion; metal treating; metal plating.
11.
ADHESIVE FILM FOR SEMICONDUCTOR, METHOD FOR PRODUCING ADHESIVE FILM FOR SEMICONDUCTOR, ADHESIVE TAPE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
This adhesive film for semiconductors contains a thermally conductive filler. The content of the thermally conductive filler is 20-70 mass% with respect to the total mass of the adhesive film. The adhesive film for semiconductors has, along the thickness direction, a first region composed of a first adhesive composition, and a second region composed of a second adhesive composition and having a lower mass concentration of the thermally conductive filler than the first region.
Disclosed is a polymer comprising a structural unit represented by formula (I) and a structural unit having a carboxy group. Also disclosed is a photosensitive resin composition containing a binder resin including the polymer, a photopolymerizable compound, and a photopolymerization initiator. (In formula (I), R1represents a hydrogen atom or a methyl group and R2 represents an alkyl group, an aryl group, an aralkyl group, or a hydrogen atom.)
G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
G03F 7/033 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
G03F 7/40 - Treatment after imagewise removal, e.g. baking
This conductive aid comprises carbon nanotubes and fibrous carbon. The conductive aid either contains granular carbon, or does not contain granular carbon and has a BET specific surface area of 120m2/g or less as measured by using nitrogen gas.
One example of the present disclosure relates to a method for measuring the thickness of a laminate 1. When measuring the thickness of a laminate 1, it is desirable to reduce variation in the measured thickness of the laminate 1. In the present disclosure, a first surface 1a of a laminate 1 is irradiated with a first laser beam L1 and a second surface 1b of the laminate 1 is irradiated with a second laser beam L2 while scanning the first laser beam L1 and the second laser beam L2 in a direction that is oblique with respect to the mesh direction of a glass cloth 21. Furthermore, the thickness of the laminate 1 is measured on the basis of irradiation results of the first laser beam L1 and the second laser beam L2 that were scanned in the abovementioned direction. Even if there are variations in the protrusion height and recess depth occurring in the mesh direction of the glass cloth, scanning the first laser beam L1 and the second laser beam L2 in the abovementioned oblique direction facilitates the accommodation of changes in the protrusion height and recess depth. Thereby, variation in the measured thickness of the laminate 1 can be reduced.
The present invention discloses an example of a semiconductor packaging method using a bridge die. In this method, a frontside RDL 22 is first formed on a glass substrate 20. The ratio (L/S) of the interconnect width to the interconnect spacing in the frontside RDL 22 is narrower than in a backside RDL 25. After forming the frontside RDL 22, posts 23 are provided on the frontside RDL 22, and for example, a bridge die 40 is provided on the frontside RDL 22. Thereafter, the posts 23 and the bridge die 40 are encapsulated, and the backside RDL 25, which is electrically connected to the posts 23, is formed thereon. In this method, unlike conventional methods, the frontside RDL 22 is first formed on the glass substrate 20. This makes it possible to form a fine frontside RDL 22 with high precision. According to this method, as an example, a frontside RDL in which the ratio (L/S) of the interconnect width to the interconnect spacing is 2 μm/2 μm or less can be formed with high precision.
Provided is a slurry containing: abrasive grains; a non-ionic surfactant having two or fewer aromatic rings; and a cationic polymer. Also provided is a multi-liquid slurry in which constituent components of the slurry are stored separately as at least a first liquid and a second liquid. The first liquid contains the abrasive grains. The second liquid contains at least one type selected from the group consisting of the non-ionic surfactant and the cationic polymer. Also provided is a polishing method that includes a step for polishing a member to be polished using the slurry. Also provided is a method for producing a component, the method including a step for obtaining a component using a member to be polished, which has been polished using the polishing method. Also provided is a method for producing a semiconductor component, the method including a step for obtaining a semiconductor component using a member to be polished, which has been polished using the polishing method.
This electronic component comprises a first substrate and a bump. The first substrate has a substrate body and an electrode pad provided on at least one surface of the substrate body. The bump has: a pillar that has a hollow structure with both ends open and that is disposed such that one end of the both ends is in contact with the electrode pad; and a bonding member disposed on an end of the pillar on the opposite side from the side in contact with the electrode pad or in the hollow structure of the pillar.
The present disclosure pertains to a polyamic acid that includes diamine units and tetracarboxylic acid units. At least one selected from the group consisting of the diamine units and the tetracarboxylic acid units includes at least one nonaromatic hydrocarbon group and includes a unit (X) having a group (X) in which the total number of carbon atoms of the at least one nonaromatic hydrocarbon group is 9 or more. The percentage content of the unit (X) is 12.0 mol% or more based on the total amount of the diamine units and the tetracarboxylic acid units.
A photosensitive resin composition comprising a binder polymer (A), a photopolymerizable compound (B), and a photoinitiator (C), wherein the photoinitiator (C) contains a hexaarylbiimidazole compound (C1) that has an alkoxy group having three or more carbon atoms in a molecular structure.
This design assistance device comprises: a data shaping unit that shapes data of a first dataset including manufacturing information and evaluation information pertaining to a first product, and a second dataset including manufacturing information and evaluation information pertaining to a second product, so that physical property information included in the evaluation information is used as an objective variable; a first training unit that preliminarily trains a machine learning model by using the first dataset subjected to the data shaping; a second training unit that performs transfer training of the preliminarily trained machine learning model by using the second dataset subjected to the data shaping; and an optimization unit that obtains manufacturing information pertaining to the second product satisfying desired physical property information by using the transfer-trained machine learning model.
G06F 30/27 - Design optimisation, verification or simulation using machine learning, e.g. artificial intelligence, neural networks, support vector machines [SVM] or training a model
22.
FRICTION MATERIAL COMPOSITION, FRICTION MATERIAL AND FRICTION MEMBER
An electrode binder composition comprising: an aqueous medium; a dispersible anionic polymer (P1) that has an anionic functional group and is dispersed in the aqueous medium; and a multivalent cationic material (C) that is capable of providing multivalent cations (c) in the aqueous medium.
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
H01B 1/24 - Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
25.
CARBON MATERIAL, CONDUCTIVE ADDITIVE, DISPERSION, COMPOSITION FOR FORMING ELECTRODE MIXTURE LAYER, AND SECONDARY BATTERY
002002 is 0.3391 nm or less, the BET specific surface area is 10.5 m2/g or more and less than 18.0 m2/g, and the consolidation resistivity at a compression density of 0.8g/cm3 is superior to 0.0165 Ω・cm or inferior to 0.0140 Ω・cm.
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
H01B 1/24 - Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
26.
CARBON MATERIAL, CONDUCTIVE ADDITIVE, DISPERSION, COMPOSITION FOR FORMING ELECTRODE MIXTURE LAYER, SECONDARY BATTERY, AND METHOD FOR PRODUCING CARBON MATERIAL
Provided is a carbon material containing carbon fibers having a structure in which cylindrical carbon hexagonal net surfaces are laminated in the fiber thickness direction, and having an average fiber diameter superior to 100 nm and inferior or equal to 170 nm, and an average fiber length of 1 μm to 4.5 μm.
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
H01B 1/24 - Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
H01M 4/13 - Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulatorsProcesses of manufacture thereof
This cooling device comprises: a plurality of heat sinks 30 each having a flat plate-like part 31 and a fin 32 protruding from the flat plate-like part 31; a plate-like first member 10 in which a plurality of first through holes 110 for passing the fins 32 of the plurality of heat sinks 30 are formed, and to which the flat plate-like part 31 is joined; and a second member 20 which is joined to the first member 10 by being subjected to laser welding in a state of being overlapped with the first member 10, the second member 20 having a plurality of fin recesses 210 recessed from the surface overlapping with the first member 10 to accommodate the fins 32 of the plurality of heat sinks 30. In the first member 10, a first cutout 141 for dividing the plurality of first through holes 110 is formed between the plurality of first through holes 110. In the second member 20, a second cutout 242 for dividing the plurality of fin recesses 210 is formed between the plurality of fin recesses 210 at the same position as the first cutout 141.
H01L 23/473 - Arrangements for cooling, heating, ventilating or temperature compensation involving the transfer of heat by flowing fluids by flowing liquids
H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
Provided is powder containing fibrous carbon that has a structure in which tubular carbon hexagonal network planes are layered in the fiber thickness direction, wherein: the average fiber diameter of the fibrous carbon is 110-300 nm; and when the powder is observed at a magnification of 20,000 times using a scanning electron microscope (SEM), the average value of the number of spherical carbon particles is 1-30, and the average maximum diameter of the spherical carbon particles is 0.30 μm or less.
D01F 9/127 - Carbon filamentsApparatus specially adapted for the manufacture thereof by thermal decomposition of hydrocarbon gases or vapours
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
30.
CARBON MATERIAL, CONDUCTIVE ADDITIVE, DISPERSION, COMPOSITION FOR FORMING ELECTRODE MIXTURE LAYER, AND SECONDARY BATTERY
Provided is a carbon material containing carbon fibers having a structure in which cylindrical carbon hexagonal net surfaces are laminated in the fiber thickness direction, and having an average fiber diameter of 140 nm or more and an average fiber length of less than 5.0 μｍ.
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
H01B 1/24 - Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
31.
CARBON MATERIAL, CONDUCTIVE ADDITIVE, DISPERSION, COMPOSITION FOR FORMING ELECTRODE MIXTURE LAYER, AND SECONDARY BATTERY
002002 is 0.3391 nm or less; the BET specific surface area is 10.5 m2/(g) or more but less than 18.0 m2/g; and in a nitrogen adsorption test of the carbon material, when the ratio of the cumulative pore volume up to a relative pressure of 0.00295 to the total pore volume (cumulative pore volume up to a relative pressure of 0.99) is denoted as φ1, and the ratio of the micropore volume (cumulative pore volume up to a relative pressure of 0.1537) to the total pore volume (cumulative pore volume up to a relative pressure of 0.99) according to the BJH method using the Halbach equation is denoted as φ2, φ2/ φ1 is 1.350 or more.
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
H01B 1/24 - Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
32.
THERMOSETTING COMPOSITION AND CURED PRODUCT THEREOF, PHOTOMELTABLE COMPOSITION, AND STRUCTURAL BODY PRODUCTION METHOD
A thermosetting composition contains a polythiol compound having a disulfide bond, a cyclic ether compound having a polyether chain and two or more cyclic ether groups, a curing accelerator, and a photoradical generator. A photo-meltable composition contains a reaction product of a polythiol compound having a disulfide bond and a cyclic ether compound having a polyether chain and two or more cyclic ether groups, and a photoradical generator.
C08G 59/38 - Epoxy compounds containing three or more epoxy groups together with di-epoxy compounds
C08G 59/18 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
C08J 3/28 - Treatment by wave energy or particle radiation
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
A replacement door member includes a panel member that configures a vehicle door and does not have a door glass bonded thereto, and an adhesive that has residual curing ability, that is provided at a bonding area for the door glass on the panel member, and that includes a flat surface at a portion on the opposite side from the panel member.
A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.
A SiC single crystal substrate of an embodiment has a diameter being 199 mm or more, wherein the density of threading dislocations per area of 0.25 mm2 arbitrarily selected in the main surface of the SiC single crystal substrate is 5×104/cm2 or less, and the threading dislocations include a threading edge dislocation.
A cleaning agent composition contains a main material for the cleaning agent composition; and an amine compound which does not include an amino group located at an end of a molecular chain but includes an amino group located at a position other than the end of the molecular chain.
A method for producing a hydrogen fluoride adsorbent having a high adsorption capacity of hydrogen fluoride including: an adsorption step of bringing hydrogen fluoride-containing gas that contains hydrogen fluoride and dilution gas for diluting the hydrogen fluoride where a concentration of the hydrogen fluoride is 0.5% by volume or more and 60% by volume or less into contact with a metal fluoride such that the hydrogen fluoride in the hydrogen fluoride-containing gas is adsorbed on the metal fluoride in a proportion of 2% by mass or more and 25% by mass or less; and a desorption step of heating the metal fluoride on which the hydrogen fluoride is adsorbed in the adsorption step in heat treatment atmosphere gas at a temperature of 240° C. or lower such that the adsorbed hydrogen fluoride is desorbed from the metal fluoride.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01J 20/04 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising compounds of alkali metals, alkaline earth metals or magnesium
B01J 20/30 - Processes for preparing, regenerating or reactivating
A polymer having: a first structural unit represented by General Formula (I) described below; and a second structural unit having an oxiranyl group. [In Formula (I), R1indicates a hydrogen atom or a methyl group, M indicates an alkylene group or an alkylene oxide chain, and R2 indicates an alkyl group or an aryl group].
This heat dissipation analysis device: simulates the maximum operating temperature of a high bandwidth memory by changing parameters of a simulation model of the high bandwidth memory that affect the heat dissipation of the high bandwidth memory; identifies, on the basis of the result of the simulation, a prediction formula that includes the parameters as variables and that predicts the maximum operating temperature of the high bandwidth memory; and uses the prediction formula to predict the maximum operating temperature of the high bandwidth memory when prescribed values are set for the parameters.
This face pack cosmetic contains polyvinyl alcohol and a salt of ascorbyl palmitate phosphate. The face pack cosmetic preferably contains 0.1-2.0 mass% of the salt of ascorbyl palmitate phosphate. The face pack cosmetic preferably contains 0.1-20 mass% of the polyvinyl alcohol.
A61K 8/81 - Cosmetics or similar toiletry preparations characterised by the composition containing organic macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
Disclosed is a sealing film comprising a thermosetting resin, a curing agent, an inorganic filler, and a compound having a phenolic hydroxyl group and a carboxy group. This sealing film may further contain an elastomer. The elastomer may be at least one selected from the group consisting of a butadiene-based rubber and a silicone-based rubber.
The present invention corrects document data and generates a database by using a generative AI. This information processing device comprises: an identification unit that identifies a search range of a database on the basis of an attribute of to-be-processed document data or the analyzed result obtained by analyzing content of the to-be-processed document data; a search unit that searches the identified search range for document data corresponding to the to-be-processed document data; a correction unit that instructs a generative AI to correct the to-be-processed document data by using a prompt that sets the to-be-processed document data as to-be-corrected document data and sets reference document data, which has been generated on the basis of the searched-for document data, as to-be-referenced document data during correction; and a storage unit that updates the database by adding information based on the analyzed result to the to-be-processed document data corrected by the generative AI and storing the same in an area in the database according to the attribute of the to-be-processed document data.
G06F 16/215 - Improving data qualityData cleansing, e.g. de-duplication, removing invalid entries or correcting typographical errors
G06F 16/383 - Retrieval characterised by using metadata, e.g. metadata not derived from the content or metadata generated manually using metadata automatically derived from the content
G06F 16/908 - Retrieval characterised by using metadata, e.g. metadata not derived from the content or metadata generated manually using metadata automatically derived from the content
G06F 40/232 - Orthographic correction, e.g. spell checking or vowelisation
A modified hydrogenated styrene elastomer according to the present disclosure is a reaction product of (a1) a hydrogenated styrene elastomer and (a2) a bismaleimide compound, wherein the modified hydrogenated styrene elastomer has a structure derived from the (a2) bismaleimide compound in a side chain, and the (a2) bismaleimide compound includes a fused ring of an aromatic ring and an aliphatic ring.
C08F 291/02 - Macromolecular compounds obtained by polymerising monomers on to macromolecular compounds according to more than one of the groups on to elastomers
C08F 287/00 - Macromolecular compounds obtained by polymerising monomers on to block polymers
C08F 290/12 - Polymers provided for in subclasses or
44.
METHOD FOR PRODUCING MODIFIED, HYDROGENATED STYRENE-BASED ELASTOMER, MODIFIED, HYDROGENATED STYRENE-BASED ELASTOMER, AND RESIN COMPOSITION
The present disclosure relates to a method for producing a modified, hydrogenated styrene-based elastomer, the method including a step in which (a1) a hydrogenated styrene-based elastomer, (a2) a compound having a radical-reactive carbon-carbon double bond, and a radical generator are reacted at a temperature of 50°C or higher but lower than 90°C. By the method, a modified, hydrogenated styrene-based elastomer is obtained in which the compound having a carbon-carbon double bond has been grafted onto the hydrogenated styrene-based elastomer.
Disclosed is a film adhesive that contains a thermosetting resin component, an elastomer, and an inorganic filler. The inorganic filler is formed from a substance that has a thermal conductivity of 10–2000 W/(m·K) at 20°C. The inorganic filler content is at least 70 mass% of the entire film adhesive. The shear viscosity at 120°C is 4500–24000 Pa·s.
Disclosed is a film adhesive containing a thermosetting resin component, an elastomer, and an inorganic filler. The inorganic filler is composed of a substance having a thermal conductivity at 20°C of 10-2000 W/(m·K). The amount of the inorganic filler is 50-85 mass% based on the total amount of the film adhesive. The elongation at break measured under the condition of a tensile speed of 100 mm/min at 25°C is 150% or more.
C09J 163/00 - Adhesives based on epoxy resinsAdhesives based on derivatives of epoxy resins
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
47.
FOAM MOLDED PRODUCT, VEHICLE MEMBER AND VEHICLE BACKDOOR
A foam molded product is obtained by combining a plurality of foam molded parts that each have a foaming site in which a first skin layer, a foam layer, and a second skin layer are laminated in this order.
B29C 45/56 - Means for plasticising or homogenising the moulding material or forcing it into the mould using mould parts movable during or after injection, e.g. injection-compression moulding
B29K 105/04 - Condition, form or state of moulded material cellular or porous
B29L 31/30 - Vehicles, e.g. ships or aircraft, or body parts thereof
48.
FILM ADHESIVE, DICING DIE BONDING TWO-IN-ONE FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
Disclosed is a film adhesive containing a thermosetting resin component, an elastomer, and an inorganic filler. The inorganic filler is composed of a substance having a thermal conductivity at 20°C of 10-2000 W/(m·K). The amount of the inorganic filler is 50-85 mass% based on the total amount of the film adhesive. The elongation at break measured under the condition of a tensile speed of 100 mm/min at 25°C is 75% or more.
The present disclosure relates to a coating liquid that contains aerogel particles, glass particles, a binder resin, and an aqueous solvent. The coating liquid makes it possible for a composite material that contains aerogel particles and a binder resin to be formed with excellent film formation properties.
This prediction device comprises: a first prediction unit that predicts an intermediate parameter on the basis of a first machine learning model that uses, as an objective variable, an intermediate parameter that affects a quality characteristic of a product; and a second prediction unit that predicts the quality characteristic by inputting a predicted value of an intermediate parameter to a second machine learning model that includes an intermediate parameter in an explanatory variable and uses the quality characteristic as an objective variable.
G16C 60/00 - Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
The present disclosure relates to a coating liquid containing aerogel particles, glass particles, a binder resin, and an aqueous solvent. The coating liquid makes it possible for a composite material containing aerogel particles and a binder resin to be formed with excellent film formation properties.
Disclosed is a film-shaped adhesive comprising thermally conductive particles, an epoxy resin, and one or more phenolic resins. In one embodiment, the phenolic resins include a phenolic resin having a hydroxyl equivalent of 185 g/eq or greater. The proportion of the phenolic resin having a hydroxyl equivalent of 185 g/eq or greater is 70 mass% or higher with respect to the total amount of the phenolic resins. In another embodiment, the phenolic resins include a phenolic resin having a biphenyl skeleton. The proportion of the phenolic resin having a biphenyl skeleton is 70 mass% or higher with respect to the total amount of the phenolic resins.
C09J 161/04 - Condensation polymers of aldehydes or ketones with phenols only
C09J 163/00 - Adhesives based on epoxy resinsAdhesives based on derivatives of epoxy resins
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
53.
FILM-LIKE ADHESIVE, DICING AND DIE-BONDING INTEGRATED FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
Disclosed is a film-like adhesive containing thermally conductive particles, an epoxy resin, and a phenol resin. In one embodiment, the phenol resin includes a phenol resin having a hydroxyl group equivalent weight of 185 g/eq or more. In one embodiment, the phenol resin includes a phenol resin having a biphenyl skeleton.
C09J 161/04 - Condensation polymers of aldehydes or ketones with phenols only
C09J 163/00 - Adhesives based on epoxy resinsAdhesives based on derivatives of epoxy resins
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
54.
CRYSTAL EVALUATION METHOD, CRYSTAL EVALUATION DEVICE, SiC SUBSTRATE, SiC DEVICE, AND SiC EPITAXIAL WAFER
Provided is a crystal evaluation method and a crystal evaluation device that can detect and evaluate efficiently in a short time multiple types of defects that may exist in SiC crystal, as well as a SiC substrate, a SiC device, and a SiC epitaxial wafer, each containing only a certain level or less of defects evaluated by the crystal evaluation method. A crystal evaluation method of evaluating a crystal state of a SiC crystal has at least a detection process of acquiring Kikuchi patterns at a plurality of measurement points of the SiC crystal using an electron backscatter diffraction method, and an evaluation process of evaluating the crystal state of the SiC crystal through image analysis of the Kikuchi pattern of each measurement point obtained in the detection process.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
This hydrophilic composition contains inorganic particles and a surface conditioner, the surface conditioner contains a compound having a hydroxyl group, and the HLB value of the compound is 12 to 19.
This order system acquires a purpose inputted by a user as a target purpose, presents, to the user, a plurality of aromatic components corresponding to the target purpose as a plurality of candidate components, acquires one or more candidate components selected by the user from among the plurality of candidate components, and generates order information related to a product to be produced using said one or more candidate components.
This proofreading device comprises: an acquisition unit that acquires document data including a recognition result obtained by executing optical character recognition on a document including a table; a table extraction unit that extracts table data including a recognition result of the table from the document data; an explanation extraction unit that extracts explanation information for the table from the document data; a proofreading instruction unit that instructs proofreading of the table data by inputting the table data and the explanation information to a machine learning model; and an output unit that outputs proofreading result data including a proofreading result obtained by proofreading the table data by the machine learning model.
10101010(B)2. (In expression (1), A is the pressure (MPa) applied, and B is the loss tangent tanδ of the solid joining agent at the heating temperature, which is at or above the glass transition temperature (Tg) of the solid joining agent.)
B32B 37/10 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using direct action of vacuum or fluid pressure
B29C 65/40 - Applying molten plastics, e.g. hot melt
B29C 65/50 - Joining of preformed partsApparatus therefor using adhesives using adhesive tape
Disclosed is a method for selecting a combination of a trialkylborane-amine complex and an amine compound in an adhesive composition containing the trialkylborane-amine complex and the amine compound, the method making it possible to achieve a sufficient pot life of the adhesive composition. The selection method comprises: a step for measuring a 11B-NMR spectrum of the trialkylborane-amine complex to determine a first chemical shift value for boron in the trialkylborane-amine complex; a step for measuring a 11B-NMR spectrum of a mixture of the trialkylborane-amine complex and the amine compound to determine a second chemical shift value for boron in the mixture; and a step for determining whether or not the combination of the trialkylborane-amine complex and the amine compound is appropriate on the basis of the first chemical shift value and the second chemical shift value.
Copper posts 22 are provided on a carrier substrate 20, and a semiconductor die 40 serving as a bridge die is attached between the copper posts 22. The semiconductor die 40 is attached by the resin layer 43 covering the terminal electrodes 42 such that the terminal electrodes 42 face the carrier substrate 20. The resin layer 43 is cured to form an encapsulant layer 23. A wiring layer 24 is formed on one side of the encapsulant layer 23, and a wiring layer 28 is formed on the other surface. Active dies 50 and 55 are attached to an interposer P. According to this method, a bridge die is attached in a face-down manner. Thus, reliable attachment can be realized. Since an expensive active die is attached last, manufacturing cost can be reduced. For the resin layer 43, an NCF or a DAF is preferably used.
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
H10D 80/30 - Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups , e.g. assemblies comprising integrated circuit processor chips
The invention provides an SiC single crystal, an SiC substrate, an epitaxial wafer, and a method for manufacturing an SiC substrate, in which 4H is a main constituent and conversion to a 6H polytype does not occur. The SiC single crystal includes 3C in a facet region and 4H is included in a non-facet region.
A method for producing a semiconductor device includes providing a laminated body comprising a support member and a temporary fixing material layer provided on the support member, wherein the temporary fixing material layer comprises a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence on the support member. The method further includes temporarily fixing a semiconductor member to the support member, with the temporary fixing material layer interposed therebetween, processing the semiconductor member temporarily fixed to the support member, and irradiating the laminated body with light through the support member to cause the metal foil to transfer heat to one or both of the first curable resin layer and the second curable resin layer, thereby separating the semiconductor member from the support member.
B32B 15/085 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyolefins
B32B 15/092 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising epoxy resins
B32B 38/00 - Ancillary operations in connection with laminating processes
Provided is a method for forming a constriction in a cylindrical member with which it is possible to form the constriction having a thickness of a designed value without local fluctuation. This method has a constriction formation step for forming the constriction by sequentially pressing, between a mandrel and a mandrel head, a first processing roller and a second processing roller against the outer circumferential surface of the cylindrical member that is rotating, the first and the second processing rollers being capable of rotating the cylindrical member on a rotation axis parallel to the cylinder axis and having mutually-different outer circumferential shapes. The difference between the diameter of the first processing roller and the diameter of the second processing roller is 10 mm or less.
Provided is a method for forming a constriction in a cylindrical member, the method enabling a constriction having a target shape to be accurately formed by suppressing fluctuations in the wall thickness of a constriction formation section of the cylindrical member, and enabling damage to a processing roller during constriction processing to be prevented. The present invention comprises a constriction formation step in which a constriction is formed by sequentially pressing a first processing roller and a second processing roller, which have different outer peripheral shapes and are capable of rotating a cylindrical member around a rotation axis parallel to a cylindrical axis, to an outer peripheral surface of the rotating cylindrical member between a mandrel and a mandrel head. In the constriction formation step, the formation position of the constriction is in a range of 10-100 mm along the length direction of the cylindrical member from one open end of the cylindrical member, and a center position in the width direction of the first processing roller and a center position in the width direction of the second processing roller are separated by 0.1-5.0 mm along the length direction of the cylindrical member.
Disclosed is an adhesive set comprising: a main agent containing a de-complexing agent; and an initiator containing an organic borane complex and at least one selected from the group consisting of compounds represented by formula (1) and compounds represented by formula (2). At least one of the main agent and the initiator additionally contains a compound that has a radically polymerizable group. At least one of the main agent and the initiator additionally contains at least one substance selected from the group consisting of metal halide salts and compounds having a thiocarbonylthio structure. [In formula (1), R1, R2, and R3each independently represent an alkyl group.] [In formula (2), n represents an integer of 2 to 5. R4represents an alkyl group. R5and R6each independently represent a hydrogen atom or an alkyl group. If a plurality of R5s and R6s are present, the plurality of R5s and R6s may be the same or different.]
Provided is a method for forming a constriction in a cylindrical member that suppresses fluctuation in the shape of a constriction formation section caused by the elasticity of the cylindrical member and thereby makes it possible to accurately form a constriction of a target size. The present invention includes a constriction formation step for sequentially pressing a first processing roller and a second processing roller that have different outer circumferential shapes and can rotate a cylindrical member around a rotational axis that is parallel to a cylindrical shaft against the outer circumferential surface of the rotating cylindrical member between a mandrel and a mandrel head to form a constriction. At the constriction formation step, the first processing roller and the second processing roller are each pressed against the cylindrical member along a perimeter of 200–1000 mm in addition to the circumferential length of the cylindrical member.
This polishing method includes a polishing step of polishing a resin material-containing resin part of a member by using slurry. The slurry contains abrasive grains having silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles. This slurry for polishing a resin material-containing resin part of a member contains abrasive grains having silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles.
Provided is a water-soluble polymer that has a low viscosity and can withstand use in strongly acidic or powerfully oxidizing environments such as in hydrogen peroxide. A polymer according to the present invention includes a structural unit represented by formula (1) and has a viscosity of at least 10 mPa·s in a 10 mass% aqueous solution. (In formula (1), m and n are 0 or 1, m+n=1, and R1–R5 represent a hydrogen atom, a C1–8 alkyl group or hydroxyalkyl group, or a phenyl group.)
C08F 26/02 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen by a single or double bond to nitrogen
Provided is a polymer for use as a thickener or a coating agent in coating fluids, the polymer having high heat resistance and being capable of sufficiently retaining the performance at high temperatures. The polymer includes a constituent unit represented by formula (1) (in formula (1), R1to R5 each represent a hydrogen atom or a C1-C8 alkyl or hydroxyalkyl group), and is either (i) a homopolymer consisting of the constituent unit or (ii) a copolymer comprising said constituent unit and a constituent unit derived from at least one monomer (referred to as other monomer) selected from the group consisting of N-vinylcarboxamides, unsaturated carboxylic acid monomers, salts of unsaturated carboxylic acid monomers, unsaturated carboxylic acid ester monomers, vinyl ester monomers, and unsaturated nitrile monomers. The polymer has a weight-average molecular weight of 1,000,000 or higher.
Provided is a polishing method comprising a polishing step of using a slurry to polish a resin portion of a member to be polished, the resin portion containing a resin material, wherein the slurry includes abrasive grains that have silicon oxide particles and an aluminum component present on each surface of the silicon oxide particles. Provided is a slurry for polishing a resin portion of a member to be polished, the resin portion containing a resin material, wherein the slurry includes abrasive grains that have silicon oxide particles and an aluminum component present on each surface of the silicon oxide particles. Provided are abrasive grains for polishing a resin portion of a member to be polished, the resin portion containing a resin material, wherein the abrasive grains have silicon oxide particles and an aluminum component present on each surface of the silicon oxide particles.
Provided is a polishing method comprising a polishing step for using a slurry to polish a resin part of a member to be polished, which has the resin part containing a resin material, wherein: the slurry contains abrasive grains having silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles; and the aluminum component includes at least one compound selected from the group consisting of aluminum acetate, aluminum chloride, and derivatives thereof. Also provided is a slurry for polishing a resin part of a member to be polished, which has the resin part containing a resin material, the slurry containing abrasive grains having silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles, wherein the aluminum component includes at least one compound selected from the group consisting of aluminum acetate, aluminum chloride, and derivatives thereof.
An adhesive for a semiconductor containing a curable resin component and an inorganic filler, wherein the inorganic filler includes boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles, the content of the boron nitride particles is 45 mass% or less on the basis of the total amount of the adhesive for a semiconductor, and the average particle size of the boron nitride particles is 2 μm or less.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
A spherical alumina powder, wherein D50 is 0.1 to 40 μm; a circularity is 0.90 or more and 1.00 or less; an α-phase percentage is 60% or more and 100% or less; and a particle surface roughness represented by Equation (1) below is 1.14 or more and 1.35 or less:
A spherical alumina powder, wherein D50 is 0.1 to 40 μm; a circularity is 0.90 or more and 1.00 or less; an α-phase percentage is 60% or more and 100% or less; and a particle surface roughness represented by Equation (1) below is 1.14 or more and 1.35 or less:
Particle
surface
roughness
=
BET
specific
surface
area
A
/
sphere
-
equivalent
specific
surface
area
Sa
calculated
from
particle
size
distribution
.
Equation
(
1
)
C01F 7/021 - After-treatment of oxides or hydroxides
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
This semiconductor device manufacturing method is for manufacturing a semiconductor device having a multilayer wiring in which wiring layers and insulation layers containing an inorganic material are alternately stacked, in such a manner that wiring layers adjacent to each other in the stacking direction while intermediated by an insulation layer are electrically connected via a conductor present in a through hole provided in the insulation layer. The multilayer wiring is formed by providing the insulation layer on a substrate, providing, on a surface of the insulation layer, a metal mask layer having an opening corresponding to the position of the through hole, and forming the through hole in the insulation layer by irradiating the opening with laser light having a diameter larger than the diameter of the opening.
A retrieval system disclosed herein acquires a search condition related to a candidate downstream substance characteristic that is a characteristic of a candidate downstream substance that is a substance obtained in a downstream process of manufacturing, extracts one or more data records corresponding to the search condition from a database storing a plurality of data records indicating a combination of the candidate downstream substance characteristic and a related physical property that is a physical property related to the candidate downstream substance characteristic, sets a related physical property indicated by one data record selected from the extracted one or more data records as a retrieval target, acquires, for each of two or more candidate upstream substances that are substances used in an upstream process of manufacturing, a candidate upstream substance physical property that is a physical property of the candidate upstream substance, and executes an optimization method using the retrieval target and the candidate upstream substance physical property of each of the two or more candidate upstream substances to determine a blending ratio between the two or more candidate upstream substances.
G16C 60/00 - Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
Provided is a polymer that has excellent heat resistance and that, when being blended in a protective film agent for use in laser dicing processing of a semiconductor wafer or the like, hardly causes deterioration in the protective film agent. This polymer includes a structural unit represented by formula (1) (in formula (1), R1-R5 each represent a hydrogen atom, or an alkyl group or a hydroxyalkyl group having 1-8 carbon atoms), has a weight average molecular weight of less than 1,000,000, and is (i) a homopolymer of said structural unit or (ii) a copolymer of said structural unit and a structural unit derived from at least one monomer (referred to as another monomer) selected from the group consisting of N-vinylcarboxylic acid amide, unsaturated carboxylic acid monomers, salts of the unsaturated carboxylic acid monomers, unsaturated carboxylic acid ester monomers, vinylester monomers, and unsaturated nitrile monomers.
C09D 133/24 - Homopolymers or copolymers of amides or imides
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
81.
METHOD FOR MANUFACTURING CIRCUIT MEMBER WITH SOLDER BUMP, AND CIRCUIT MEMBER WITH SOLDER BUMP
This method for manufacturing a circuit member with a solder bump includes: a deposition step S02 for depositing a solder layer 11 onto a region, including a peak surface 3a of a pillar 3, on one surface of a substrate 2 on which the electroconductive pillar 3 is provided; a reduction step S03 for reducing the solder layer 11 under an atmosphere of a reducing gas and forming a solder bump 4 on the peak surface 3a of the pillar 3; a removal step S04 for removing an excess solder layer 12 remaining on the one surface of the substrate 2 after the reduction step; and a re-reduction step S05 for re-reducing the solder bump 4 on the peak surface 3a of the pillar 3 under an atmosphere of a reducing gas, and forming, on an interface between the pillar 3 and the solder bump 4, an alloy layer 6 composed of a constituent material of the pillar 3 and a constituent material of the solder bump 4.
A photosensitive resin composition for a permanent resist according to the present disclosure contains an acid-modified vinyl-group-containing resin, a photopolymerizable compound, a photopolymerization initiator, and an elastomer, wherein the elastomer contains an epoxy-modified polybutadiene compound having an epoxy equivalent weight of 195 g/eq or higher.
A photosensitive element according to the present disclosure comprises a support film and a photosensitive layer formed on the support film. The photosensitive layer contains an acid-modified vinyl group-containing resin, a photopolymerization initiator, and an inorganic filler. The inorganic filler has a refractive index of 1.48-1.75, and at a thickness of 18 μm, the photosensitive layer exhibits an absorbance of 0.40-1.05 for the wavelength 380 nm.
A photosensitive resin composition for a permanent resist according to the present disclosure comprises: an acid-modified vinyl group-containing resin (A); a photopolymerizable compound (B); a photopolymerization initiator (C); an inorganic filler (D); and a polymerization inhibitor (E). The photopolymerization initiator (C) contains at least one initiator selected from the group consisting of α-aminoacetophenone photopolymerization initiators, benzophenone photopolymerization initiators, thioxanthone photopolymerization initiators, acylphosphine oxide photopolymerization initiators, and oxime ester photopolymerization initiators. The inorganic filler (D) comprises an inorganic filler having a refractive index of 1.500-1.700.
A photosensitive resin composition for a permanent resist according to the present disclosure includes (A) an acid-modified vinyl group-containing resin, (B) a photopolymerizable compound, (C) a thermosetting resin, (D) an inorganic filler, (E) a photopolymerization initiator, and (F) a polymerization inhibitor, wherein (F) the polymerization inhibitor contains a nitroxyl radical compound, and the content of the nitroxyl radical compound is 0.015-0.40 pt.mass with respect to 100 pts.mass of the total amount of (A) the acid-modified vinyl group-containing resin, (B) the photopolymerizable compound, and (C) the thermosetting resin.
A photosensitive resin composition for a permanent resist according to the present disclosure contains an acid-modified vinyl-group-containing resin, a photopolymerizable compound, a photopolymerization initiator, and an elastomer, wherein the elastomer contains an acid-anhydride-modified polybutadiene compound.
The present disclosure relates, for example, to a hybrid bonding method in which an organic insulating film is used as an insulating film. In hybrid bonding methods in which an organic insulating film is used, heating at the time of bonding sometimes results in a thermal expansion difference between the organic insulating film and a terminal electrode that is formed of a metal or the like, and it is necessary to provide, in advance, a specific level difference D between the tip surface of the terminal electrode and the surface of the organic insulating film. In the present disclosure, in order to provide such a level difference D, the surface of a semiconductor substrate 100 is irradiated with nitrogen plasma. With this nitrogen plasma irradiation, an organic insulating film 102 of the semiconductor substrate 100 is etched by the nitrogen plasma so that a surface 102a of the organic insulating film 102 is positioned further back than a tip surface 103a of an electrode 103.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Disclosed is an example of hybrid bonding for chip-on-wafer (COW), which is a three-dimensional semiconductor-integration technology. In this method, a protective layer 110 is formed on a substrate 100 having an insulating layer 102 and a plurality of electrodes 103 which are provided atop a semiconductor wafer 101, the protective layer being formed so as to cover the insulating layer 102 and the electrodes 103. The substrate 100 on which the protective layer 110 is formed is segmented by dicing, and a plurality of semiconductor chips 10 are thereby acquired. A protective section 110a corresponding to the protective layer 110 is separated from each semiconductor chip 10, and thereafter, each semiconductor chip is bonded to a semiconductor wafer 200 through hybrid bonding. In this method, because the semiconductor chip 10 is covered with the protective layer 110 at the time of dicing, debris generated by the dicing does not adhere to the surface of the semiconductor chip 10. Due to this configuration, the semiconductor chip 10 is bonded to the semiconductor wafer 200 without causing bonding failure.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The present invention discloses an example of a hybrid bonding method using an organic insulating layer. In this method, due to heating at the time of bonding, a difference in thermal expansion occurs between the organic insulating layer and metal electrodes. In order to reduce the influence of the difference on the bonding strength, a step D is provided in advance between the surface of the organic insulating layer and the leading end surfaces of the electrodes. The step D is formed by irradiating the surface of a substrate 100 with plasma (for example, argon plasma). Furthermore, in this method, an acidic aqueous solution (for example, an aqueous solution containing citric acid) is applied to the surface of the substrate 100 to perform acid cleaning. Thus, the oxide on the leading end surfaces 102a of the electrodes 102 to be bonded is removed. According to this method, it is possible to increase the bonding strength of insulating layers and of electrodes, and to reduce the connection resistance between the electrodes. Polyimide is used as a material of the organic insulating layer when heat resistance is taken into consideration, for example.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
90.
METHOD FOR ESTIMATING MOLDING LEAKAGE, METHOD FOR MANUFACTURING PARTICULATE RESIN COMPOSITION FOR SEMICONDUCTOR SEALING MATERIAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE
According to the present invention, the degree of leakage from a mold during compression molding is estimated easily on the basis of the melting properties of a particulate resin composition for a semiconductor sealing material. The particulate resin composition for a semiconductor sealing material is subjected to a shear force while being heated at a temperature equal to or higher than the melting temperature, viscosity information relating to the particulate resin composition for a semiconductor sealing material is acquired, and the degree of leakage from the mold during compression molding is estimated on the basis of the acquired viscosity information.
C08L 23/02 - Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bondCompositions of derivatives of such polymers not modified by chemical after-treatment
A photosensitive resin composition for permanent resists according to the present disclosure contains (A) an acid-modified vinyl group-containing resin, (B) a photopolymerizable compound, (C) a photopolymerization initiator, (D) an inorganic filler, and (E) a silicone compound, wherein (E) the silicone compound has at least one first group selected from the group consisting of ethylenically unsaturated groups, alkyl groups, and aryl groups, and at least one second group selected from the group consisting of alkoxy groups and silanol groups.
This reactive hot melt adhesive comprises a urethane prepolymer, wherein: the amount of heat of fusion of the urethane prepolymer measured by differential scanning calorimetry is 35 J/g or more; and the viscosity of the urethane prepolymer at 80°C is 30 Pa•s or more.
Abrasive grains according to a first embodiment include cerium-based particles, and the cerium-based particles are surface-treated with a silane compound having at least one selected from the group consisting of a secondary amino group and a tertiary amino group. Abrasive grains according to a second embodiment include cerium-based particles, and the cerium-based particles are surface-treated with a silane compound having a heterocyclic ring. A slurry according to one embodiment of the present invention contains the abrasive grains. A polishing method according to one embodiment of the present invention comprises a step for polishing a member to be polished using the slurry. A component manufacturing method according to one embodiment of the present invention comprises a step for obtaining a component using a member to be polished that has been polished by the polishing method. A method for manufacturing a semiconductor component according to one embodiment of the present invention comprises a step for obtaining a semiconductor component using a member to be polished that has been polished by the polishing method.
A photosensitive resin composition for a permanent resist according to the present disclosure contains an acid-modified vinyl group-containing resin, a photopolymerization initiator, a polyester elastomer, and at least one selected from the group consisting of polymerization inhibitors and ultraviolet absorbers.
A photosensitive element for a permanent resist according to the present disclosure comprises a support film and a photosensitive layer formed upon the support film, wherein: the photosensitive layer contains (A) a resin containing an acid-modified vinyl group, (B) a photopolymerizable compound, (C) a photopolymerization initiator, and (D) an inorganic filler; the (D) inorganic filler contains an inorganic filler having a refractive index of 1.500-1.700; the photosensitive layer has a thickness of 5-35 μm; and the photosensitive layer has an absorbance of 0.40-1.00 with respect to light having a wavelength of 380 nm.
G03F 7/033 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
96.
PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE ELEMENT, PRINTED WIRING BOARD, AND PRODUCTION METHOD FOR PRINTED WIRING BOARD
A photosensitive resin composition for a permanent resist according to the present disclosure contains (A) an acid-modified vinyl group-containing resin, (B) a photopolymerizable compound, (C) a photopolymerization initiator, (D) an inorganic filler, and (E) a silicone compound, wherein (E) the silicone compound has at least one first group selected from the group consisting of ethylenically unsaturated groups, alkyl groups, and aryl groups, and at least one second group selected from the group consisting of alkoxy groups and silanol groups.
This slurry contains abrasive grains including cerium-based particles, wherein the cerium-based particles are surface-treated with a silane compound having: one trialkoxysilyl group; and a functional group including a heteroatom. This polishing method comprises a step for polishing a member to be polished using the slurry. These abrasive grains include cerium-based particles, wherein the cerium-based particles are surface-treated with a silane compound having: one trialkoxysilyl group; and a functional group including a heteroatom.
In one example of a method for manufacturing a semiconductor device, a glass carrier 20 is bonded to a first surface 11 of a silicon substrate 10. A semiconductor chip 30 is mounted on a second surface 12 of the silicon substrate 10. Thereafter, the semiconductor chip 30 is sealed on the second surface 12 of the silicon substrate 10 to which the glass carrier 20 is bonded to form sealing material layers 40, 45. The warpage of the sealing material layers 40, 45 is prevented by utilizing the contraction of the glass carrier 20 at the time of sealing. The sealed semiconductor device may be further divided into individual pieces. This method can be used for, for example, 2.5D mounting of a semiconductor package.
Provided is an abrasive grain for polishing silicon nitride, the abrasive grain containing cerium-based particles, the cerium-based particles being surface-treated with a silane compound. Provided is a slurry containing the abrasive grain. Provided is a polishing method comprising a step for polishing, by using the slurry, a silicon nitride–containing member to be polished. Provided is a component fabrication method comprising a step for obtaining a component by using the member to be polished that has been polished according to the polishing method. Provided is a semiconductor component fabrication method comprising a step for obtaining a semiconductor component by using the member to be polished that has been polished according to the polishing method.
Composite particles are provided, including: a copolymer, and a tackifier, in which the copolymer has a first structural unit derived from a monomer (a1) and a second structural unit derived from a monomer (a2), the monomer (a1) is a nonionic compound having only one ethylenically unsaturated bond, and the monomer (a2) is a compound having a carboxy group and only one ethylenically unsaturated bond.
