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1.
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thalis
| Application Number |
019175289 |
| Status |
Registered |
| Filing Date |
2025-04-18 |
| Registration Date |
2025-08-13 |
| Owner |
Flexora GmbH (Germany)
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| NICE Classes ? |
- 09 - Scientific and electric apparatus and instruments
- 11 - Environmental control apparatus
- 42 - Scientific, technological and industrial services, research and design
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Goods & Services
Temperature sensors; Heat sensors; Thermal sensors [thermostats]; Remote temperature sensors; Coolant-temperature sensors; Sensors for determining temperature; Sensors; Temperature indicators; Electronic sensors; Measurement apparatus; Meters. Temperature sensors [thermostatic valves] for central heating radiators. Calibration [measuring]; Research in measurement technology; Measurement services; Design of measurement systems.
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2.
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Flexora
| Application Number |
018858921 |
| Status |
Registered |
| Filing Date |
2023-04-06 |
| Registration Date |
2023-07-26 |
| Owner |
Flexora GmbH (Germany)
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| NICE Classes ? |
- 09 - Scientific and electric apparatus and instruments
- 11 - Environmental control apparatus
- 38 - Telecommunications services
- 42 - Scientific, technological and industrial services, research and design
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Goods & Services
Sensors used in plant control; Electric sensors; Internet of Things [IoT] sensors; Sensors. Heat accumulators. Data streaming. Engineering research; Advisory services relating to scientific research; Scientific research and development; Scientific research; Development of industrial machinery.
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3.
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CONTROLLED ORGANIC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
| Application Number |
17904270 |
| Status |
Pending |
| Filing Date |
2021-04-22 |
| First Publication Date |
2023-03-16 |
| Owner |
FLEXORA GMBH (Germany)
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| Inventor |
- Sawatzki, Michael
- Kleemann, Hans
- Leo, Karl
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Abstract
In various embodiments, there is provided a controlled organic semiconductor device comprising a crystalline first organic semiconductor layer on or over a substrate, the crystalline first organic semiconductor layer having a first conductivity type; and a crystalline second organic semiconductor layer on or over the first organic semiconductor layer, the crystalline second organic semiconductor layer having a second conductivity type, the first conductivity type being different from the second conductivity type.
IPC Classes ?
- H01L 51/05 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
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4.
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Organic thin film transistor and method for producing same
| Application Number |
17418303 |
| Grant Number |
12317665 |
| Status |
In Force |
| Filing Date |
2020-01-17 |
| First Publication Date |
2021-12-16 |
| Grant Date |
2025-05-27 |
| Owner |
Flexora GmbH (Germany)
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| Inventor |
- Kleemann, Hans
- Park, Seongae
- Vahland, Jörn
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Abstract
An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.
IPC Classes ?
- H10K 10/46 - Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K 10/84 - Ohmic electrodes, e.g. source or drain electrodes
- H10K 10/88 - PassivationContainersEncapsulations
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