The objective of the present invention is to provide a coating composition capable of preventing pattern collapse by causing the contact angle between a semiconductor device pattern and water to be close to 90°, and to provide a pattern coated with the coating composition, and the coating composition capable of preventing pattern collapse comprises: a coating material for preventing pattern collapse, comprising an amide compound represented by chemical formula (1) or a phosphorus compound represented by chemical formula (2); and an organic solvent.
C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
The present invention provides: a coating composition for reinforcing strength so as to prevent damage due to stress imbalance and impact generated during a process for manufacturing a PCB substrate for packaging; and a PCB substrate glass manufactured by using same, and relates to: a coating composition for reinforcing a PCB substrate glass; and a PCB substrate glass manufactured by using same, the coating composition comprising: a compound represented by chemical formula 1; silica; a water-soluble organic solvent; and water.
The present invention relates to a spin-on carbon hard mask composition with higher planarization performance, which is useful in semiconductor lithography processes, and a patterning method using same. The composition according to the present invention contains the 3′,6′-Dihydroxy-3H-spiro[2-benzofuran-1,9′-xanthen]-3-one derivative polymer represented by the following chemical formula 1, an organic solvent, and a surfactant and exhibits excellent effects including excellent solubility, uniform coating performance, high etch-resistance enduring multi-etch processes, excellent mechanical properties, and high planarization properties.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
The present invention relates to an etchant composition for etching a molybdenum film and a modified molybdenum film while suppressing the etching of an aluminum oxide film and a silicon oxide film, and an etching method therefor, wherein the etchant composition comprises, with respect to the total weight of the composition: 0.1 to 10% by weight of inorganic acid; 0.001 to 5% by weight of an oxidizer; 0.001 to 3% by weight of a fluorine compound; 2 to 4% by weight of a pH adjusting agent; 0.0001 to 2% by weight of an additive; and a residual amount of water.
The present invention relates to a cutting oil composition used in a wire-saw cutting process, composed of: 50 to 95% by weight of base oil represented by chemical formula 1, chemical formula 2, or chemical formula 3; 0.1 to 5% by weight of a chelating agent; 0.1 to 10% by weight of a thickener; 0.1 to 5% by weight of a dispersant; 1 to 20% by weight of an oiling improver; and 1 to 10% by weight of a nonionic surfactant, wherein all properties, including residual metal impurity removal power, cleaning power, viscosity, surface tension, corrosiveness, dispersibility, lubricity, wafer uniformity, wear resistance, etc. are comprehensively excellent, and in particular, cleaning power and metal ion impurity removal power are remarkably excellent.
C10M 169/00 - Lubricating compositions characterised by containing as components a mixture of at least two types of ingredient selected from base-materials, thickeners or additives, covered by the preceding groups, each of these compounds being essential
[Abstract] The invention of the present application relates to a rinse solution composition for extreme ultraviolet photolithography and a pattern formation method using same. The rinse solution composition for extreme ultraviolet photolithography comprises: 0.0001-0.01 wt% of a fluorine-based surfactant; 0.0001-0.5 wt% of a pattern reinforcing agent which is a compound of chemical formula (1), a compound of chemical formula (2), or a mixture thereof; 0.0001-0.5 wt% of a substance selected from the group consisting of triol derivatives, tetraol derivatives, or mixtures thereof; and the remainder of water.
The present invention relates to a slurry composition for polishing a copper barrier layer for chemical mechanical planarizing (CMP) of tantalum nitride or tantalum as a diffusion barrier in the presence of an interconnect structure in an integrated circuit device. The slurry composition according to the present invention comprises polishing particles, a heterocyclic compound, an organic acid, a surface-protecting agent, a nitride, a pH adjuster, and the remainder of deionized water, and there is the effect of providing a slurry composition exhibiting high polishing selectivity and less dishing and defects.
The present invention relates to an etching composition for selectively etching a silicon nitride layer. The etching composition includes an inorganic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention selectively removes a silicon nitride layer while minimizing damage to an underlying metal layer and preventing a silicon oxide layer from being etched.
Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.
Proposed are a processing solution for reducing the incidence of pattern collapse and the number of defects in a photoresist pattern including polyhydroxystyrene using extreme ultraviolet rays as an exposure source, and a method of forming a pattern using the same. The processing solution for reducing the incidence of photoresist pattern collapse and the number of defects includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of an anionic surfactant, and 98 to 99.9998 wt % of water.
A processing solution composition for reducing collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, 0.0001 to 1 wt % of an alkaline material selected from the group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof, and 98 to 99.9998 wt % of water, and is effective at reducing the collapse of a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source.
A process of realizing a silicon micropattern having a large aspect ratio in a semiconductor-manufacturing process, and a novel wet etching method that includes treating an organic carbon film layer so that a hydrofluoric-acid-resistant material is selectively attached to the organic carbon film layer and then wet etching the same using an aqueous solution containing hydrofluoric acid, thus forming a pattern, are proposed. In the method of forming the pattern by wet etching, etching is performed so that an active region having a depth of several μm in an object to be etched is not damaged when a pattern having a small CD is formed, thereby exhibiting an effect of providing a method of forming a micropattern.
An extreme ultraviolet (EUV) developer composition for use in manufacturing a semiconductor is provided. More particularly an EUV developer composition for forming a fine pattern is provided, which is capable of forming a more uniform pattern and lowering EOP in a development process, the EUV developer composition including a water-soluble polymer represented by Chemical Formula 1, a nonionic surfactant represented by Chemical Formula 2, and an alkali compound.
A photoresist developer composition for an EUV (extreme ultraviolet) light source in a semiconductor-manufacturing process is proposed. Further, the photoresist developer composition for an EUV light source for forming a micropattern and a lithography process of forming a pattern on a semiconductor substrate using an EUV light source using the composition are proposed. The composition includes an aqueous solution containing 2 to 10 wt % of tetraethylammonium hydroxide (TEAH). When a photoresist is developed, an Eop is reduced, which shortens a process time, prevents a pattern from collapsing, and enables a pattern to have a uniform profile.
Disclosed is a cutting oil composition, which is vastly superior in view of layer separation, dispersibility, viscosity, ingot-cleaning time after sawing, and wafer warpage after sawing, compared to conventional cutting oil compositions, and which includes mineral oil that is highly hydrogenated, as represented by Chemical Formulas 1 to 3, bentonite clay as a thickener, and glycerol trioleate as a dispersant. A cutting method using the cutting oil composition is also provided.
The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.
Provided is a composition for shrinking a photoresist pattern, which is capable of shrinking a photoresist pattern using a photoresist during the fabrication of a semiconductor, and to a method of shrinking a pattern using the composition, whereby a pattern to be formed can be shrunken in a photoresist-patterning process, thus remarkably decreasing the number of steps of a semiconductor fabrication process and reducing the fabrication time and costs.
Disclosed is a post-chemical-mechanical-polishing cleaning composition, which is capable of effectively removing impurities from the surface of a wafer substrate after chemical mechanical polishing and also of preventing the corrosion of metal line materials, and which includes choline hydroxide, tetrabutylammonium hydroxide, 1,2,4-triazole, 2-hydroxypyridine, and the remainder of ultrapure water.
Provided is a hard mask composition having high etching resistance suitable for use in a semiconductor lithography process, and particularly to a spin-on hard mask composition including a dibenzo carbazole polymer and to a patterning method of forming a hard mask layer by applying the composition on an etching layer through spin coating and performing a baking process. The hard mask according to the present invention has effects of exhibiting high solubility and superior mechanical properties, as well as high etching resistance to withstand multiple etching processes.
C08G 61/10 - Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes
The present invention relates to a chemically-amplified-type negative photoresist composition, and more particularly to a chemically-amplified-type negative photoresist composition suitable for use in a semiconductor process, which includes a specific organic acid additive, thereby improving a processing margin in a short-wavelength exposure light source compared to conventional negative photoresists.
The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.
Disclosed is a negative photoresist composition for a KrF laser, having high resolution and a high aspect ratio and, more particularly, a negative photoresist composition for a KrF laser, which includes a specific additive in order to improve the properties of a conventional negative photoresist, whereby the negative photoresist composition can prevent fine-pattern collapse even using a short-wavelength exposure light source, compared to conventional negative photoresists, and can also exhibit high resolution and a high aspect ratio and is thus suitable for use in semiconductor processing.
The present invention relates to an anti-reflective coating solution composition and an anti-reflective coating film using the same. More particularly, an anti-reflective coating solution composition is provided, which has a low refractive index to thus improve transmittance and can also increase abrasion resistance to thus maintain an anti-reflective effect for a long period of time, whereby an anti-reflective coating film for improving solar cell module efficiency can be formed, and thus can be applied not only to a solar cell module glass but also to glass in a variety of fields.
C03C 17/30 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
24.
I-line negative type photoresist composition having excellent etching resistance
This invention relates to an I-line negative photoresist composition having excellent etching resistance, which can exhibit superior etching resistance compared to conventional I-line negative photoresists and is thus suitable for use in semiconductor processing.
Provided are a slurry composition for CMP and a polishing method using the same, in which polishing can be performed by freely adjusting the selectivity ratio of a silicon oxide film, a silicon nitride and a polysilicon film through control of the amounts of additive and solvent, and thus the slurry composition can be efficiently applied to the process of manufacturing a semiconductor, requiring selective removal of a silicon nitride film and a polysilicon film relative to a silicon oxide film.
Provided is a negative photoresist composition for a KrF laser for semiconductor pattern formation, which includes a predetermined compound in order to improve the properties of a conventional negative photoresist, thereby realizing high transparency, high resolution and an excellent profile, even in the presence of an exposure source having a short wavelength compared to the conventional negative photoresist, and is thus suitable for use in semiconductor processing.
G03F 7/033 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
27.
Cleaning composition for photolithography and method of forming photoresist pattern using the same
Disclosed are a cleaning composition for photolithography and a method of forming a photoresist pattern using the same. The cleaning composition, necessary for forming a photoresist pattern having a high aspect ratio, includes water and a compound represented by Chemical Formula 1 below:
wherein R is H or OH, x is an integer selected from 1 to 100, y is an integer selected from 0 to 100, and z is an integer selected from 0 to 100. This cleaning composition is useful for forming a pattern using any of a variety of light sources, and also, even when it is difficult to form a fine pattern as desired using a photoresist alone, a fine pattern can be realized at a desired level of fineness and production costs can be reduced.
Disclosed herein is a coating composition for preventing the collapse of a capacitor, comprising a silane compound or a phosphorus compound. The coating composition can adjust a contact angle with regard to water on a substrate, thereby preventing the collapse of capacitor patterns on the substrate.
A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.
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