[Problem] To provide: a heat control device which can be easily installed on a manufacturing line; a control method for controlling the operation of the heat control device; a recording medium; and the like. [Solution] One embodiment of the present invention provides a heat control device which is equipped with a heat control member, a sensor, wiring, and a power source. The heat control member heats or cools an object, the sensor outputs heat information related to the heat acting on the object, the wiring electrically connects the heat control member and the sensor, and the power source applies a voltage to the heat control member and the sensor through the wiring.
Provided is a semiconductor storage device with which it is possible, in an MRAM, to reduce the circuit area and achieve high density. A semiconductor storage device 1000 comprises a memory cell array 10 in which a plurality of memory cells 100 are arranged in a matrix. Each memory cell 100 includes a topological antiferromagnetic body to which data can be written by spin inflow caused by a write current, a first electrode provided so as to supply the write current to the topological antiferromagnetic body, and a switch element SW00 for opening and closing a write current supply path leading to the topological antiferromagnetic body. The topological antiferromagnetic body exhibits an abnormal Hall effect due to a write current in a prescribed direction. Data is read by detecting a difference in potential resulting from the abnormal Hall effect.
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Thermoelectric conversion elements; heat flow sensors; heat
flow sensors using semiconductors; heat flow sensing
apparatus; analysing apparatus and instruments; measuring or
testing machines and instruments; remote monitoring device
of operation condition of factory equipment using heat flow
sensors; remote monitoring device of operation condition of
factory equipment; computer hardware and software for remote
monitoring of operation condition of factory equipment using
heat flow sensors; computer hardware and software for remote
monitoring and analysis; downloadable computer software for
remote monitoring of operation condition of factory
equipment using heat flow sensors; downloadable computer
software for remote monitoring and analysis; laboratory
apparatus and instruments; computer servers; computers;
computer hardware; semiconductors; semi-conductor memories;
semi-conductor memory devices; data storage media for
computers; data storage apparatus; data processing
apparatus; computer memory devices; computer peripheral
devices; solid-state drives; integrated circuits; circuit
boards; biological information monitoring apparatus, not for
medical purposes; telecommunication machines and apparatus;
electric or magnetic meters and testers; electrical cells;
electronic circuits, not including those recorded with
computer programs; computer programs; electronic
publications; temperature gauges; diagnostic apparatus to
identify abnormalities in batteries; gas detecting apparatus
and instruments. Metal treating; custom manufacture of semiconductor devices;
rental of chemical processing machines and apparatus;
providing material treatment information; assembly or
packaging of semiconductor integrated circuits; custom
assembling of integrated circuits, circuit boards and
semiconductors; providing information relating to the
manufacture, processing or assembly of semiconductor
memories; rental of semiconductor manufacturing apparatus. Design of integrated circuits; computer software design,
computer programming, or maintenance of computer software;
technological advice relating to computers, automobiles and
industrial machines; providing temporary use of on-line
non-downloadable software; cloud computing; providing
computer programs on data networks; software as a service
[SaaS]; rental of computers; designing of machines,
apparatus, instruments [including their parts] or systems
composed of such machines, apparatus and instruments; design
of semiconductors; advice and consultancy services relating
to the design of semiconductors; design services; design of
electronic circuits, semi-conductor elements, integrated
circuits and large scale integrated circuits; advice and
consultancy services relating to the design of electronic
circuits, semi-conductor elements, integrated circuits and
large scale integrated circuits; computer programming;
scientific research; research in the fields of chemistry,
biology and physics; testing or research on computer
software; testing or research on semiconductors; testing or
research on machines, apparatus and instruments; research in
the field of thin film technology; research in the field of
materials science; rental of measuring apparatus; rental of
laboratory apparatus and instruments; rental of technical
drawing instruments; remote monitoring of computer networks
for facility management; remote monitoring of computer
networks for managing the operation condition of factory
equipment using heat flow sensors; remote monitoring of
computer systems for managing the operation condition of
factory equipment using heat flow sensors; remote monitoring
of computer systems; remote monitoring of computer networks.
4.
SEMICONDUCTOR STORAGE DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR STORAGE DEVICE, METHOD FOR WRITING STORAGE DATA, METHOD FOR READING STORAGE DATA, AND STORAGE SYSTEM
Provided is a semiconductor storage device for STT-MRAM in which the circuit area is reduced to achieve high density. A semiconductor storage device 1000 comprises a memory cell array 10 in which a plurality of memory cells 100 are arranged in rows and columns. Each memory cell 100 includes: a magnetic tunnel junction element capable of data writing by spin transfer torque due to write current; a first electrode of a topological antiferromagnetic material provided so as to supply the write current to the magnetic tunnel junction element; and a switch element SW00 for opening and closing a supply path of the write current to the magnetic tunnel junction element. The semiconductor storage device 1000 further comprises a plurality of first wires WL0, WL1 provided in the row direction of the memory cell array to control the opening/closing of the switch element SW00. The switch element SW00 is a transistor, and an active layer continuously provided in memory cells adjacent to each other in the column direction includes a channel region of each of a plurality of transistors.
According to one aspect of the present invention, there is provided a measurement system comprising a wafer and at least one heat flow sensor provided to the wafer, the heat flow sensor being configured to exchange heat with the wafer and thereby measure heat flow from a specific position on the wafer.
09 - Scientific and electric apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Thermoelectric conversion elements; heat flow sensors; heat flow sensors using semiconductors; heat flow sensing apparatus; analysing apparatus and instruments; measuring or testing machines and instruments; remote monitoring device of operation condition of factory equipment using heat flow sensors; remote monitoring device of operation condition of factory equipment; computer hardware and software for remote monitoring of operation condition of factory equipment using heat flow sensors; computer hardware and software for remote monitoring and analysis; downloadable computer software for remote monitoring of operation condition of factory equipment using heat flow sensors; downloadable computer software for remote monitoring and analysis; laboratory apparatus and instruments; computer servers; computers; computer hardware; semiconductors; semi-conductor memories; semi-conductor memory devices; data storage media for computers; data storage apparatus; data processing apparatus; computer memory devices; computer peripheral devices; solid-state drives; integrated circuits; circuit boards; biological information monitoring apparatus, not for medical purposes; telecommunication machines and apparatus; electric or magnetic meters and testers; electrical cells; electronic circuits, not including those recorded with computer programs; computer programs; electronic publications; temperature gauges; diagnostic apparatus to identify abnormalities in batteries; gas detecting apparatus and instruments. Metal treating; custom manufacture of semiconductor devices; rental of chemical processing machines and apparatus; providing material treatment information; assembly or packaging of semiconductor integrated circuits; custom assembling of integrated circuits, circuit boards and semiconductors; providing information relating to the manufacture, processing or assembly of semiconductor memories; rental of semiconductor manufacturing apparatus. Design of integrated circuits; computer software design, computer programming, or maintenance of computer software; technological advice relating to computers, automobiles and industrial machines; providing temporary use of on-line non-downloadable software; cloud computing; providing computer programs on data networks; software as a service [SaaS]; rental of computers; designing of machines, apparatus, instruments [including their parts] or systems composed of such machines, apparatus and instruments; design of semiconductors; advice and consultancy services relating to the design of semiconductors; design services; design of electronic circuits, semi-conductor elements, integrated circuits and large scale integrated circuits; advice and consultancy services relating to the design of electronic circuits, semi-conductor elements, integrated circuits and large scale integrated circuits; computer programming; scientific research; research in the fields of chemistry, biology and physics; testing or research on computer software; testing or research on semiconductors; testing or research on machines, apparatus and instruments; research in the field of thin film technology; research in the field of materials science; rental of measuring apparatus; rental of laboratory apparatus and instruments; rental of technical drawing instruments; remote monitoring of computer networks for facility management; remote monitoring of computer networks for managing the operation condition of factory equipment using heat flow sensors; remote monitoring of computer systems for managing the operation condition of factory equipment using heat flow sensors; remote monitoring of computer systems; remote monitoring of computer networks.
7.
METHOD AND PROGRAM FOR ESTIMATING POWER LOSS BY DEVICE
A method according to one aspect of the present invention relates to a method for estimating power loss caused by a device which includes a switching element capable of changing a resistance value, the method comprising the following steps: a heat flow measurement step for, by using a first heat flow sensor configured to exchange heat with a device in which a resistance value of the switching element is changed in a prescribed switching pattern, measuring a heat flow generated from the device, the switching pattern including a first pattern and a second pattern different from the first pattern; and an estimation step for estimating power loss by comparing, from among heat flow measurement results, a first contribution which is a contribution of the heat flow in the first pattern with a second contribution which is a contribution of the heat flow in the second pattern.
G01N 25/20 - Investigating or analysing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
An embodiment of the present invention provides a magnetic memory element comprising a fixed layer and a storage layer, wherein: the fixed layer is configured to have spontaneous magnetization along a lamination direction; the magnetization direction of the fixed layer is configured to be fixed regardless of data written to the magnetic memory element; the storage layer is laminated on the fixed layer along the lamination direction, with a barrier layer having electric insulation properties interposed therebetween, and comprises a first ferromagnetic layer and an antiferromagnetic layer; the first ferromagnetic layer is configured to have spontaneous magnetization along the lamination direction; the magnetization direction of the first ferromagnetic layer is configured to be invertible in accordance with data written to the magnetic memory element by using a tunnel current via the fixed layer and the storage layer; the antiferromagnetic layer includes an antiferromagnetic material that exhibits an abnormal Hall effect by forming a non-collinear or non-coplanar magnetic order in an ab plane defined by an a-axis and a b-axis, which are perpendicular to a c-axis serving as the easy axis of magnetization; and the antiferromagnetic material includes at least a domain in which the c-axis follows the lamination direction.
Provided is a semiconductor storage device that is capable of stably reading and writing data at high speed. A semiconductor storage device 1000 comprises a memory cell array in which a plurality of memory cells 100 are arranged in a matrix. Each memory cell 100 includes a pair of magnetic tunnel junction elements that are neighboring in the row direction of the memory cell array, and each of the magnetic tunnel junction elements has a first node and an internal node. Each memory cell 100 further includes a first electrode that is provided so as to connect to the internal nodes of the pair of magnetic tunnel junction elements, and has a second node and a third node that are for conducting write currents. The semiconductor storage device 1000 further comprises a writing control circuit that supplies write currents to the first electrodes so as to cause the resistance conditions of the magnetic tunnel junction elements in each pair to differ from each other.
H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Provided is an SOT-MRAM capable of achieving high density by reducing circuit area. A memory cell array 10 of a semiconductor storage device 1000 includes memory cells 100 arranged in a matrix and each having a magnetic tunnel junction element. The semiconductor memory device 1000 includes: a shared read source line SRSL which is arranged in a column direction and to which terminals of read transistors of memory cells adjacent to each other in a row direction are connected; and bit lines BL0, BL1 which are arranged in a column direction and connected to the other electrodes of the magnetic tunnel junction elements. Read word lines RWL0, RWL1 are activated, either the bit lines or the shared read source line is activated, and a sense amplifier reads out stored data on the basis of a change in a current value of the lines/line which are/is not activated among the bit lines or the shared read source line.
H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
H01L 29/82 - Types of semiconductor device controllable by variation of the magnetic field applied to the device
According to one embodiment of the present invention, a semiconductor module is provided. This semiconductor module is provided with: a circuit board on which a semiconductor element is mounted; and a heat-flow sensor which is disposed at a location where a heat-flow is generated as a consequence of the semiconductor element generating heat.
H10N 10/00 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H10N 15/00 - Thermoelectric devices without a junction of dissimilar materialsThermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
12.
THERMOELECTRIC CONVERSION DEVICE, POWER SUPPLY SYSTEM, AND POWER SUPPLY METHOD
One aspect of the present invention provides a thermoelectric conversion device. The thermoelectric conversion device comprises at least one thermoelectric conversion element, a first electrode, and a second electrode. The thermoelectric conversion element is configured to generate a thermoelectromotive force induced by a temperature gradient along a first direction. The thermoelectromotive force includes Seebeck electromotive force generated along the first direction by the Seebeck effect based on the temperature gradient, and Nernst electromotive force generated so as to have a component along a second direction perpendicular to the first direction by the anomalous Nernst effect based on the temperature gradient. The first electrode is connected to a first connection region of the thermoelectric conversion element. The second electrode is connected to a second connection region of the thermoelectric conversion element. The first connection region and the second connection region are separated from each other in the first direction, and are separated from each other in the second direction.
H10N 15/00 - Thermoelectric devices without a junction of dissimilar materialsThermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
According to one aspect of the present invention, an element is provided. The element comprises a storage layer, an insulating layer, and a fixed layer. Each of the storage layer and the fixed layer is configured to have a spontaneous magnetization. The insulating layer is disposed between the storage layer and the fixed layer, and is thereby configured to form a tunnel magnetic junction between the storage layer and the fixed layer. The magnetization direction of the fixed layer is configured to be fixed regardless of data that is written to the element. The magnetization direction of the storage layer is configured to be reversible in accordance with the data written to the element. At least one of the storage layer and the fixed layer is an anomalous Hall layer composed of an antiferromagnet that exhibits an anomalous Hall effect. The sign of the anomalous Hall coefficient of the antiferromagnet is configured to be reversible in accordance with the data written to the element. At least a part of the anomalous Hall layer is configured to contain a contaminating element which is at least one selected from the group consisting of H, B, C, and N.
According to one aspect of the present invention, a memory element is provided. The memory element comprises a fixed layer and a storage layer. The fixed layer is composed of a first ferromagnet having a spontaneous magnetization, and is configured such that the magnetization direction of the first ferromagnet is fixed regardless of data that is written to the memory element. The storage layer is configured to include an antiferromagnet and a second ferromagnet having a spontaneous magnetization. The antiferromagnet is configured to exhibit an anomalous Hall effect, wherein the sign of the anomalous Hall coefficient of the antiferromagnet is reversible in accordance with the data written to the memory element. The second ferromagnet is configured such that the magnetization direction thereof is reversible in conjunction with the sign of the anomalous Hall coefficient of the antiferromagnet in accordance with the data written to the memory element.
[Problem] To provide a device, etc., for measuring a heat flow and a temperature at the same location. [Solution] One aspect of the present invention provides a measuring device. The measuring device comprises a thermoelectric conversion circuit, a heat flow measuring unit, and a temperature measuring unit. The thermoelectric conversion circuit includes an element configured to generate an electromotive force by means of a temperature gradient generated as a result of heat exchange with an object being measured. The heat flow measuring unit is configured to measure a heat flow generated in the object being measured, on the basis of an electrical signal generated in the thermoelectric conversion circuit by means of the electromotive force. The temperature measuring unit is configured to: cause a second current to flow along a pathway through which a first current resulting from the electromotive force flows, in at least a portion of the thermoelectric conversion circuit, to measure an electrical resistance of the at least a portion of the thermoelectric conversion circuit; and measure the temperature of the object being measured, on the basis of the electrical resistance.
One aspect of the present invention provides a measurement system. The measurement system comprises: at least one substrate configured to exchange heat with an object being measured; at least one first thermoelectric conversion device; and at least one second thermoelectric conversion device. The substrate has at least one mounting surface. Each of the thermoelectric conversion devices is provided on the substrate in such a way that a temperature gradient is caused by heat exchange, through the mounting surface, with the object being measured, and a thermoelectric power is generated due to the temperature gradient. The thermoelectric power includes a first electromotive force due to a first thermoelectric conversion effect based on a vertical component of the temperature gradient with respect to the mounting surface, and a second electromotive force due to a second thermoelectric conversion effect based on an in-plane component of the temperature gradient with respect to the mounting surface. The second thermoelectric conversion device is configured such that the sign of only one of the first electromotive force and the second electromotive force is reversed with respect to a temperature gradient in substantially the same direction as the temperature gradient in the first thermoelectric conversion device.
H10N 10/13 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
H10N 10/17 - Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
17.
INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, AND PROGRAM
This information processing system is for a concentration sensor which is provided with: a first thermoelectric conversion part that is configured to generate an electromotive force resulting from a temperature gradient and that includes a first measurement surface; an interaction part that is configured, when being activated, to change the heat quantity during heat exchange resulting from the degree of interaction caused by contact with target particles included in a fluid, and that performs heat exchange with the first thermoelectric conversion part via the first measurement surface; and a first temperature adjustment part that performs temperature adjustment so as to set the drive temperature to be higher than the minimum temperature at which the interaction part can be activated. The information processing system comprises a control circuit configured to execute: an acquisition step for acquiring, from a sensor unit, a measurement result relating to the concentration of the target particles and a value relating to the temperature of the interaction part; and an output step for outputting, at least in a portion of a period in which the temperature of the interaction part reaches the drive temperature from the initial temperature and on the basis of the measurement result and a correction value identified on the basis of the value relating to the temperature of the interaction part, the concentration of the target particles included in the fluid, the concentration having been corrected by using the correction value.
G01N 25/34 - Investigating or analysing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on combustion or catalytic oxidation, e.g. of components of gas mixtures the rise in temperature of the gases resulting from combustion being measured directly using mechanical temperature-responsive elements, e.g. bimetallic
G01N 25/22 - Investigating or analysing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity on combustion or catalytic oxidation, e.g. of components of gas mixtures
According to an aspect of the present invention, a measurement system is provided. This measurement system comprises a heat flow sensor and a housing. The heat flow sensor includes a substrate having electrical insulation and a thermoelectric conversion unit provided on the substrate. The thermoelectric conversion unit is configured to generate an electromotive force on the basis of a temperature gradient along a gradient direction towards the thermoelectric conversion unit from the substrate. The housing is configured to be capable of accepting the heat flow sensor and includes a first wall and a second wall. The first wall is configured to face the substrate. The second wall is configured to cover the heat flow sensor by extending along the gradient direction from the first wall and includes an opening. The opening is configured to pass through the second wall so that at least a portion of the thermoelectric conversion unit is continuous with the outside of the housing without passing through the substrate.
One embodiment of the present invention provides a heat flow measuring device. This heat flow measuring device comprises: a thermoelectric conversion unit that is configured to convert, on the basis of the anomalous Nernst effect, a heat gradient generated by heat exchange with a measurement target into an electric signal; and a magnetic field application unit that is configured to apply a unidirectional magnetic field to the thermoelectric conversion unit.
According to an embodiment of the present invention, a signal processing method in a measuring system is provided. The measurement system in this signal processing method is provided with a thermoelectric conversion unit. The thermoelectric conversion unit is configured to convert a temperature gradient, which is caused by heat exchange with a measurement target, to an electric signal on the basis of an anomalous Nernst effect. The signal processing method includes the following steps. In a modulation step, a modulation including a prescribed modulation frequency is introduced to an electric signal output by the thermoelectric conversion unit to generate a modulation signal. The modulation frequency is a different frequency from the frequency band of the thermoelectric conversion unit. In an extraction step, a signal of a component of the modulation frequency is extracted from the modulation signal.
An embodiment of the present invention provides a measuring system. The measuring system comprises a heat flow sensor and a housing. The heat flow sensor comprises an electrically insulating substrate and a thermoelectric conversion part that is provided on the substrate. The thermoelectric conversion part is configured so that an electromotive force occurs on the basis of a temperature gradient along a gradient direction that is the direction from the substrate to the thermoelectric conversion part. The housing is configured to be capable of accommodating the heat flow sensor, and comprises a first wall part and a second wall part. The first wall part is configured so as to exchange heat with the thermoelectric conversion part via the substrate. The second wall part is configured so as to exchange heat with the thermoelectric conversion part not via the same substrate or a different substrate.
One aspect of the present invention provides a measuring device. The measuring device comprises a base, a temperature adjusting portion, and at least one heat flow sensor. The base includes a measuring surface that faces a fluid. The temperature adjusting portion is provided in the base. The measuring device is configured to heat or cool the fluid, which can move along the measuring surface, on the basis of an external signal. Each of the at least one heat flow sensor is provided on the measuring surface and is configured to generate an electromotive force as a result of a temperature gradient that includes a component in a normal line direction of the measuring surface. The at least one heat flow sensor includes a first heat flow sensor. The first heat flow sensor is disposed in a position on the measuring surface that is separated from the temperature adjusting portion in a first in-plane direction, which is one in-plane direction of the measuring surface.
G01P 5/10 - Measuring speed of fluids, e.g. of air streamMeasuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
23.
GAS DETECTOR, GAS DETECTING MODULE, GAS DETECTING DEVICE, AND GAS DETECTING METHOD
[Problem] To provide a gas detector and the like capable of detecting an amount of gas in a short time period. [Solution] One aspect of the present invention provides a gas detector. The gas detector comprises: a thin-film type heat flow sensor provided in a position to receive electromagnetic waves irradiated with a prescribed intensity; and a detecting unit which, if a measured value from the heat flow sensor changes due to a change in the received intensity of the electromagnetic waves, detects an amount of gas in a space through which the electromagnetic waves pass, on the basis of the change in the measured value.
G01N 21/3504 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
24.
INFORMATION PROCESSING METHOD, RECORDING MEDIUM, AND CALCULATION METHOD
The purpose of the present invention is to provide an information processing method, a recording medium, and a calculation method that make it possible to evaluate level of comfort according to individual differences. One embodiment of the present invention provides an information processing method. This information processing method comprises an acquisition step, a calculation step, and an output step. In the acquisition step, heat balance information that relates to the heat balance of a user is acquired. The heat balance information includes the flow of heat in the user. In the calculation step, the level of comfort of the user is calculated on the basis of the heat balance information and first reference information. The first reference information indicates the relationship between the heat balance information and the level of comfort. In the output step, information relating to the level of comfort is outputted.
A61B 5/16 - Devices for psychotechnicsTesting reaction times
G06Q 10/04 - Forecasting or optimisation specially adapted for administrative or management purposes, e.g. linear programming or "cutting stock problem"
F24F 120/00 - Control inputs relating to users or occupants
25.
INFORMATION PROCESSING SYSTEM AND INFORMATION PROCESSING METHOD
One embodiment of the present invention provides an information processing system. This information processing system comprises a thermoelectric conversion unit and a signal processing unit. The thermoelectric conversion unit is configured so as to generate a thermal gradient by exchanging heat with a device and is configured so as to generate thermoelectric power on the basis of the thermal gradient. The signal processing unit comprises an acquiring unit and a detection unit. The acquiring unit is configured so as to acquire the thermoelectric power. The detection unit is configured so as to detect, on the basis of the thermoelectric power, an abnormal operation of the device accompanied by heat generation.
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
G01R 31/00 - Arrangements for testing electric propertiesArrangements for locating electric faultsArrangements for electrical testing characterised by what is being tested not provided for elsewhere
H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
