Abstract

A cell or tissue embedding device having an aqueous gel serving as an immunoisolation layer, the aqueous gel containing, as components thereof, a denatured polyvinyl alcohol resin having an activated carbonyl group and a crosslinking agent is highly capable of supplying a physiologically active substance.

IPC Classes  ?

• A61L 27/16 - Macromolecular materials obtained by reactions only involving carbon-to-carbon unsaturated bonds
• A61L 27/34 - Macromolecular materials
• A61L 27/38 - Animal cells
• A61L 27/54 - Biologically active materials, e.g. therapeutic substances
• C12M 3/00 - Tissue, human, animal or plant cell, or virus culture apparatus
• C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues

Abstract

To provide a cell or tissue embedding device highly capable of supplying a physiologically active substance, by curbing the reduction of living cells or living tissue in the process of preparing a PVA gel containing the living cells or living tissue. To provide a cell or tissue embedding device highly capable of supplying a physiologically active substance, by curbing the reduction of living cells or living tissue in the process of preparing a PVA gel containing the living cells or living tissue. An aqueous gel to form an immunoisolation layer of a cell or tissue embedding device has, as its component, a polyvinyl alcohol resin having a syndiotacticity of 32 to 40% in triad.

IPC Classes  ?

• C12N 11/04 - Enzymes or microbial cells immobilised on or in an organic carrier entrapped within the carrier, e.g. gel or hollow fibres
• C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell linesTissuesCultivation or maintenance thereofCulture media therefor
• A61K 35/39 - PancreasIslets of Langerhans
• A61K 47/32 - Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. carbomers

Abstract

A cell or tissue embedding device having an aqueous gel serving as an immunoisolation layer, the aqueous gel containing, as components thereof, a denatured polyvinyl alcohol resin having an activated carbonyl group and a crosslinking agent is highly capable of supplying a physiologically active substance.

IPC Classes  ?

• A61L 27/16 - Macromolecular materials obtained by reactions only involving carbon-to-carbon unsaturated bonds
• A61L 27/34 - Macromolecular materials
• A61L 27/38 - Animal cells
• A61L 27/54 - Biologically active materials, e.g. therapeutic substances
• C12M 3/00 - Tissue, human, animal or plant cell, or virus culture apparatus
• C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues

Abstract

By suppressing the loss of living cells or living tissue during the production of a PVA gel that contains living cells or living tissue, the present invention addresses the problem of supplying a cell- or tissue-embedding device that has a high capacity for supplying a biologically active substance. According to the present invention, an aqueous gel for forming an immunoisolation layer for a cell- or tissue-embedding device is formed from a polyvinyl alcohol resin that has a triad syndiotacticity of 32%–40%.

IPC Classes  ?

• C12M 3/00 - Tissue, human, animal or plant cell, or virus culture apparatus
• A61K 35/12 - Materials from mammalsCompositions comprising non-specified tissues or cellsCompositions comprising non-embryonic stem cellsGenetically modified cells
• A61K 35/22 - UrineUrinary tract, e.g. kidney or bladderIntraglomerular mesangial cellsRenal mesenchymal cellsAdrenal gland
• A61K 35/26 - LymphLymph nodesThymusSpleenSplenocytesThymocytes
• A61K 35/28 - Bone marrowHaematopoietic stem cellsMesenchymal stem cells of any origin, e.g. adipose-derived stem cells
• A61K 35/30 - NervesBrainEyesCorneal cellsCerebrospinal fluidNeuronal stem cellsNeuronal precursor cellsGlial cellsOligodendrocytesSchwann cellsAstrogliaAstrocytesChoroid plexusSpinal cord tissue
• A61K 35/39 - PancreasIslets of Langerhans
• A61K 35/407 - LiverHepatocytes
• A61K 35/545 - Embryonic stem cellsPluripotent stem cellsInduced pluripotent stem cellsUncharacterised stem cells
• A61K 35/55 - Glands not provided for in groups , e.g. thyroids, parathyroids or pineal glands
• C12N 11/04 - Enzymes or microbial cells immobilised on or in an organic carrier entrapped within the carrier, e.g. gel or hollow fibres
• A61P 3/00 - Drugs for disorders of the metabolism
• A61P 5/00 - Drugs for disorders of the endocrine system

Abstract

The present invention addresses the problem of providing a cell- or tissue-embedding device which suppress the reduction in a living cell or a living tissue, during a process for preparing a PVA gel containing the living cell or living tissue, so as to exhibit an excellent ability to supply a physiologically active substance. An aqueous gel, which is to be used for forming an immunoisolation layer of a cell- or tissue-embedding device, is prepared by using a modified polyvinyl alcohol-based resin (A) having an active carbonyl group and a crosslinking agent (B) as components thereof.

IPC Classes  ?

• A61K 9/00 - Medicinal preparations characterised by special physical form
• A61K 9/06 - OintmentsBases therefor
• A61K 35/22 - UrineUrinary tract, e.g. kidney or bladderIntraglomerular mesangial cellsRenal mesenchymal cellsAdrenal gland
• A61K 35/26 - LymphLymph nodesThymusSpleenSplenocytesThymocytes
• A61K 35/28 - Bone marrowHaematopoietic stem cellsMesenchymal stem cells of any origin, e.g. adipose-derived stem cells
• A61K 35/35 - Fat tissueAdipocytesStromal cellsConnective tissues
• A61K 35/39 - PancreasIslets of Langerhans
• A61K 35/407 - LiverHepatocytes
• A61K 35/50 - PlacentaPlacental stem cellsAmniotic fluidAmnionAmniotic stem cells
• A61K 35/545 - Embryonic stem cellsPluripotent stem cellsInduced pluripotent stem cellsUncharacterised stem cells
• A61K 35/55 - Glands not provided for in groups , e.g. thyroids, parathyroids or pineal glands
• A61K 47/12 - Carboxylic acidsSalts or anhydrides thereof

Abstract

The present invention addresses the problem of providing a statistical probabilistic means capable of accurately estimating an allele-specific gene expression in various organisms. The inventors have discovered that this problem can be solved by using a computer to perform steps (1) - (4) with respect to data wherein read information for cDNA of a polyploid organism. (1) Digitalization of each isoform in each read and an expected mapping number with respect to each allele of the isoform. (2) Calculation of a total number of expected mappings by means of the total for each isoform in the expected mapping number digitized in (1), and calculation of the portion of each allele in the total number of expected mappings. (3) Calculation of (i) an isoform quantitative ratio and (ii) an allele-specific selection related to the total number of expected mappings calculated in (2). (4) Certification of a convergence value obtained by a loop process for the aforementioned steps as the optimal data for the allele-specific gene expression.

IPC Classes  ?

• G06F 19/20 - for hybridisation or gene expression, e.g. microarrays, sequencing by hybridisation, normalisation, profiling, noise correction models, expression ratio estimation, probe design or probe optimisation

Abstract

z. Atom ratios a, b, c, d, e=1−a−b−c−d, x+y, and y related to A-layers satisfy 0.2≤a≤0.7, 0.05≤b≤0.6, 0≤c≤0.3, 0≤d≤0.05, 0≤e≤0.05, 0.3≤x+y≤0.6, and 0≤y≤0.6, respectively. Atom ratios a, b, c, d, e=1−a−b−c−d, x, y, z, and x+y+z related to B-layers satisfy 0.2≤a≤0.7, 0.05≤b≤0.6, 0≤c≤0.3, 0≤d≤0.05, 0≤e≤0.05, 0≤x≤0.6, 0≤y≤0.6, 0

IPC Classes  ?

• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• B23C 5/28 - Features relating to lubricating or cooling
• C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
• C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
• C23C 14/34 - Sputtering
• C23C 14/50 - Substrate holders

Abstract

An evaluation aid is used as a phantom (imitation lesion) when a digital X-ray dynamic image thereof is taken and evaluated for image qualities for X-ray absorption parts having different X-ray absorption ratios. The evaluation aid contains a fixed plate (plate-like body) including a plurality of regions having different X-ray absorption ratios; a rotating disk (movable body) having a plurality of wires (wire rods), the rotating disk capable of rotating (moving) with respect to the fixed plate so that the plurality of wires traverse X-ray with which the fixed plate is irradiated; and a driving motor (driving portion) which rotates (moves) the rotating disk with respect to the fixed plate. It is preferred that thicknesses and/or constituent materials of the plurality of regions of the fixed plate are different from each other, so that these regions have the different X-ray absorption ratios.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment

Abstract

An evaluation aid serves as a phantom (imitation lesion) when a digital X-ray image is taken, and evaluation is then carried out through the digital X-ray image. The evaluation aid can simplify evaluating image qualities of a digital X-ray image for X-ray absorption parts having different X-ray absorption ratios all at once. The evaluation aid contains a substrate (plate-like body) including a plurality of regions having different X-ray absorption ratios for taking a digital X-ray image to carry out evaluation. Step members are provided on the plate-like body so as to correspond to the plurality of regions, respectively, where each step member includes a plurality of subregions having different X-ray absorption ratios. Preferably the thicknesses and/or constituent materials of the plurality of regions of the substrate are different from each other in order to have different X-ray absorption ratios in these regions.

IPC Classes  ?

• G01D 18/00 - Testing or calibrating apparatus or arrangements provided for in groups
• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment

Abstract

The purpose of the present invention is to provide, from a probability statistics processing viewpoint, a means for optimizing read information that mapped a particular gene locus group such as MHC. The present invention provides a method, computer system and computer program comprising: a step for digitizing the number of expected mappings of the alleles of each particular genetic locus for all reads, in respect to read information for which the correspondence of each read to a particular genetic locus group allele is identified; a step for digitizing the total number of expected mappings; and a step for calculating the proportion of reads allocated to each allele. The foregoing steps are performed repeatedly and the read information is optimized by a computer, and on the basis of the optimized information, the genotype of the particular genetic locus group can be easily and accurately estimated.

IPC Classes  ?

• G06F 19/18 - for functional genomics or proteomics, e.g. genotype-phenotype associations, linkage disequilibrium, population genetics, binding site identification, mutagenesis, genotyping or genome annotation, protein-protein interactions or protein-nucleic acid interactions
• C12N 15/09 - Recombinant DNA-technology
• C12Q 1/68 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving nucleic acids
• G06F 19/24 - for machine learning, data mining or biostatistics, e.g. pattern finding, knowledge discovery, rule extraction, correlation, clustering or classification

Abstract

A power generating device is disclosed that includes a power generating unit, an inductor, a switch connected to the inductor in series, and a control circuit. The power generating unit includes a piezoelectric element, and upper and lower electrodes disposed on surfaces of the piezoelectric element. The inductor is electrically connected to the electrodes in parallel, with the inductor and a capacitance component constituting a resonance circuit. The control circuit has a driving mode in which it controls the switch to an ON state in synchronism with the voltage generated in the piezoelectric element becoming a peak value. Further, in a rest mode, the control circuit controls the switch to be in an OFF state when the voltage generated in the piezoelectric element has the peak value.

IPC Classes  ?

• H01L 41/113 - Piezo-electric or electrostrictive elements with mechanical input and electrical output
• H02N 2/18 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators

Abstract

A tool hard film that is to be disposed as coating on a surface of a tool, the tool hard film being a TiCrMoWV oxycarbide, oxynitride, or oxycarbonitride having a phase with a NaCl-type crystal structure as a main phase, the oxycarbide, oxynitride, or oxycarbonitride having fine crystals due to introduction of oxygen.

IPC Classes  ?

• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material

Abstract

The present invention addresses the problem of discovering a means for achieving the more proper selection of a Tag SNP to be contained in a nucleic acid probe, which is a probe contained in a DNA microarray or the like and used as a means for carrying out imputation, in the imputation of SNPs. Specifically, it is found that the problem can be solved by a method for selecting a Tag SNP that is used as a means for imputing information on SNPs of human genome using human genome information that includes information on a group of SNPs, in which genotypes of multiple individuals are specified, for the purpose of constituting a group of nucleic acid probes corresponding to the Tag SNP, wherein the sum total of mutual information amounts between Tag SNP candidates and Target SNPs for the candidates is employed as a measure for the selection of the Tag SNP. Thus, provided are: a computer system and a computer program which are developed on the basis of the above-mentioned principle; a DNA microarray which is equipped with a group of nucleic acid probes corresponding to a Tag SNP selected by the aforementioned means; and a method for producing the DNA microarray.

IPC Classes  ?

• G06F 19/20 - for hybridisation or gene expression, e.g. microarrays, sequencing by hybridisation, normalisation, profiling, noise correction models, expression ratio estimation, probe design or probe optimisation
• C12M 1/00 - Apparatus for enzymology or microbiology
• C12N 15/09 - Recombinant DNA-technology
• C12Q 1/68 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving nucleic acids
• G01N 33/53 - ImmunoassayBiospecific binding assayMaterials therefor
• G01N 37/00 - Details not covered by any other group of this subclass

Abstract

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and a drill (12) can be obtained by alternately forming and laminating two or more layers A (24) composed of a carboxide, oxynitride or oxycarbonitride of (CraMobWcVdBe)1-x-y-zCxNyOz and two or more layers B (25) composed of WfC(1-f). In this connection, the atomic ratios a-e, x, y, z and (x + y + z) of the layers A (24) are within predetermined ranges; the atomic ratio f of the layers B (25) satisfies 0.3 ≤ f ≤ 0.7; the film thickness (D1) of the layers A (24) is within the range from 2 nm to 500 nm (inclusive); the film thickness (D2) of the layers B (25) is within the range from 1 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

IPC Classes  ?

• B23B 27/14 - Cutting tools of which the bits or tips are of special material
• B23B 51/00 - Tools for drilling machines

Abstract

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and an end mill (12) can be obtained by alternately forming and laminating two or more layers A (22) composed of a carboxide, oxynitride or oxycarbonitride of (CraMobWcVdBe)1-x-y-zCxNyOz and two or more layers B (24) composed of W(1-f)Nf. In this connection, the atomic ratios a-e, x, y, z and (x + y + z) of the layers A (22) are within predetermined ranges; the atomic ratio f of the layers B (24) satisfies 0.3 ≤ f ≤ 0.6; the film thickness (D1) of the layers A (22) is within the range from 2 nm to 500 nm (inclusive); the film thickness (D2) of the layers B (24) is within the range from 1 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

IPC Classes  ?

• B23B 27/14 - Cutting tools of which the bits or tips are of special material
• B23C 5/16 - Milling-cutters characterised by physical features other than shape

Abstract

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and an end mill (12) can be obtained by alternately forming two or more (CraMobWcVdBe)1-x-yCxNy layers A (22) and two or more (CraMobWcVdBe)1-x-y-zCxNyOz layers B (24) by controlling the composition ratios of Cr, Mo, W, V and B and various reaction gases during the film formation, or alternatively by controlling only the various reaction gases during the film formation. In this connection, the atomic ratios a-e, y and (x + y) of the layers A (22) are within predetermined ranges; the atomic ratios a-e, x, y, z and (x + y + z) of the layers B (24) are within predetermined ranges; the film thickness (D1) of the layers A (22) is within the range from 2 nm to 1,000 nm (inclusive); the film thickness (D2) of the layers B (24) is within the range from 2 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

IPC Classes  ?

• B23B 27/14 - Cutting tools of which the bits or tips are of special material
• B23C 5/16 - Milling-cutters characterised by physical features other than shape
• C23C 14/08 - Oxides

Abstract

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and a drill (12) can be obtained by alternately forming and laminating two or more layers A (24) composed of a carboxide, oxynitride or oxycarbonitride of (CraMobWcVdBe)1-x-y-zCxNyOz and two or more layers B (25) composed of (Ti1-fSif)1-gNg. In this connection, the atomic ratios a-e, x, y, z and (x + y + z) of the layers A (24) are within predetermined ranges; the atomic ratio f of the layers B (25) satisfies 0 < f ≤ 0.4 and the atomic ratio g of the layers B (25) satisfies 0.4 ≤ g ≤ 0.6; the film thickness (D1) of the layers A (24) is within the range from 2 nm to 500 nm (inclusive); the film thickness (D2) of the layers B (25) is within the range from 1 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

IPC Classes  ?

• B23B 27/14 - Cutting tools of which the bits or tips are of special material
• B23B 51/00 - Tools for drilling machines

Abstract

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and a drill (12) can be obtained by alternately forming and laminating two or more layers A (24) composed of a carboxide, oxynitride or oxycarbonitride of (CraMobWcVdBe)1-x-y-zCxNyOz and two or more layers B (25) composed of Si(1-f)Nf. In this connection, the atomic ratios a-e, x, y, z and (x + y + z) of the layers A (24) are within predetermined ranges; the atomic ratio f of the layers B (25) satisfies 0.3 ≤ f ≤ 0.6; the film thickness (D1) of the layers A (24) is within the range from 2 nm to 500 nm (inclusive); the film thickness (D2) of the layers B (25) is within the range from 1 nm to 20 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

IPC Classes  ?

• B23B 27/14 - Cutting tools of which the bits or tips are of special material
• B23B 51/00 - Tools for drilling machines

Abstract

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

A power generating apparatus (100) is provided with a power generating unit (1), an inductor (L), a switch (SW) connected in series to the inductor (L), and a control circuit (3). The power generating unit (1) includes a piezoelectric element (11), and an upper electrode (112) and a lower electrode (113), which are formed on a surface of the piezoelectric element (11). The inductor (L) is electrically connected in parallel to the upper electrode (112) and the lower electrode (113), and constitutes a resonant circuit with a capacitance component of the piezoelectric element (11). The control circuit (3) has drive mode, in which the switch (SW) is brought into the on-state in synchronization with timing when a voltage generated in the piezoelectric element (11) is at an extreme value, and stop mode, in which the switch (SW) is brought into the off-state at the timing when the voltage is at an extreme value. In the cases where frequency of vibration is the natural frequency of the power generating unit, the control circuit (3) inserts a control in the stop mode during a time when control in the drive mode is being performed.

IPC Classes  ?

• H02N 2/18 - Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators

Abstract

[Problem] To provide: a magnetoresistive element which has low saturation magnetization and high perpendicular magnetic anisotropy; and a magnetic memory. [Solution] A magnetoresistive element which is provided with a first magnetic layer, a second magnetic layer and a first non-magnetic layer that is arranged between the first magnetic layer and the second magnetic layer. The first magnetic layer is provided with a magnetic film that contains Mn, Ga and at least one element that is selected from the group consisting of Al, Ge, Ir, Cr, Pt, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb and Dy.

IPC Classes  ?

• H01L 43/08 - Magnetic-field-controlled resistors
• H01L 21/8246 - Read-only memory structures (ROM)
• H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
• H01L 43/10 - Selection of materials

Abstract

Provided are: a hard film for tools, having high hardness, low friction properties, deposition resistance, and oxidation resistance; and a metal machining tool. The hard film (30) for tools comprises X1-a-bZaOb (X indicates at least one type of metal element selected from Mo, V, and W, and Z indicates at least one type of non-metal element selected from N and C) or (X1-cYc)1-a-bZaOb (X indicates at least one type of metal element selected from Mo, V, and W, X indicates at least one type of metal element selected from Ti and Cr, and Z indicates at least one type of non-metal element selected form N and C.) A hard film for tools that has high hardness, excellent low friction properties, excellent deposition resistance, and excellent oxidation resistance can be obtained by introducing oxygen.

IPC Classes  ?

• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• B21H 3/02 - Making helical bodies or bodies having parts of helical shape external screw-threads
• B23B 27/14 - Cutting tools of which the bits or tips are of special material
• B23C 5/16 - Milling-cutters characterised by physical features other than shape
• C23C 14/08 - Oxides
• C23C 16/40 - Oxides

Abstract

Provided is a hard film for machining tools, having excellent friction resistance, deposition resistance, and smoothness. As a result of this hard film (30) adhered to a rolling tap (10), a TiCrMoWV oxycarbide, oxynitride, or carbo-oxynitride, having a phase having a NaCl-type crystal structure as the main phase thereof, has fine crystals of no more than 100 nm as a result of the introduction of oxygen. As a consequence, the surface of the hard film becomes extremely smooth and a low friction coefficient can be obtained, therefore friction resistance, deposition resistance, and smoothness can be obtained, and tool life can be extended because the hard film has excellent smoothness and a low low-friction coefficient, in addition to friction resistance and deposition resistance.

IPC Classes  ?

• C23C 14/08 - Oxides

Abstract

Provided is a dosimeter that, with minimal impact on images taken or displayed using radiation, can measure radiation doses in real-time while said images are being taken or displayed and is environmentally safe. This dosimeter is provided with the following: a radiation detection unit (100) that has a Y2O2S-based phosphor (120) containing at least one activator, namely europium; an optical fiber (200) that transmits light that the phosphor (120) in the radiation detection unit (100) emits upon receiving radiation; and a light-detecting unit (310) that detects the light transmitted by the optical fiber (200).

IPC Classes  ?

• G01T 1/00 - Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
• C09K 11/00 - Luminescent, e.g. electroluminescent, chemiluminescent, materials
• C09K 11/84 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals containing sulfur, e.g. oxysulfides
• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

The present invention addresses the problem of simply and easily providing a highly durable electrical insulation film that makes it possible to manage production with high efficiency while keeping costs down. An electrical insulation film is configured using an anodic oxide film of an aluminum alloy to which 0.01-0.15% of zirconium is added.

IPC Classes  ?

• H01L 21/314 - Inorganic layers
• H01L 21/283 - Deposition of conductive or insulating materials for electrodes
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

The present invention addresses the problem of simply and easily providing a highly durable electrical insulation film that makes it possible to manage production with high efficiency while keeping costs down. An electrical insulation film is configured using an anodic oxide film of an aluminum alloy having magnesium, zirconium, and cerium added thereto.

IPC Classes  ?

• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
• C25D 11/04 - Anodisation of aluminium or alloys based thereon
• H01L 21/283 - Deposition of conductive or insulating materials for electrodes
• H01L 21/314 - Inorganic layers
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/786 - Thin-film transistors

Abstract

The present invention provides an evaluation aid which can be used as a phantom (imitation lesion) when a digital X-ray dynamic image thereof is taken and then evaluation is carried out through the digital X-ray dynamic image, and especially an evaluation aid which can be used for evaluating image qualities of a digital X-ray dynamic image for X-ray absorption parts having different X-ray absorption ratios, and an evaluation device provided with such an evaluation aid. The evaluation aid of the present invention is adapted to be used for taking a digital X-ray dynamic image thereof through which evaluation is carried out, and contains a fixed plate (plate-like body) including a plurality of regions having different X-ray absorption ratios; a rotating disk (movable body) having a plurality of wires (wire rods), the rotating disk capable of rotating (moving) with respect to the fixed plate so that the plurality of wires traverse X-ray with which the fixed plate is irradiated; and a driving motor (driving portion) which rotates (moves) the rotating disk with respect to the fixed plate. It is preferred that thicknesses and/or constituent materials of the plurality of regions of the fixed plate are different from each other, so that these regions have the different X-ray absorption ratios.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment

Abstract

Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulator layer, and is smaller than a penetration depth of ultraviolet light.

IPC Classes  ?

• H01L 31/062 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
• H01L 27/146 - Imager structures
• H01L 31/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• G01J 3/28 - Investigating the spectrum

Abstract

One of the problems addressed by the present invention is to provide a method for etching a silicon-based semiconductor article, the method enabling an SiO2 layer to function reliably as an etching stop layer even when fluoronitric acid having a high etching rate is used as an etchant. The problem can be solved by using high-concentration fluoronitric acid as an etchant to etch an Si layer directly superposed on the SiO2 layer, from the free-surface side thereof, replacing the fluoronitric acid with fluoronitric acid which has a lower concentration than that fluoronitric acid, either immediately before at least some of the surface of the SiO2 layer beneath the Si layer is exposed or immediately after the exposure, and further conducting the etching.

IPC Classes  ?

• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

Provided are a metal nano-micro-protrusion black body that can absorb light in a wide wavelength range and can selectively adjust a light absorbing orientation, and a method for producing the same. Provided is a metal nano-micro-protrusion black body that includes a substrate made of zinc or a substrate having a zinc layer on a surface thereof, and a multiplicity of nano-micro protrusions that are principally made of zinc and grow from and are formed of this substrate, wherein the metal nano-micro-protrusion black body has the following characteristics: the nano-micro protrusion has a shape with a round cross-section such as a conical or cylindrical shape, and has an aspect ratio of 3 or more, the aspect ratio being a ratio of the height of the nano-micro protrusion with respect to the diameter thereof at the bottom of 3 μm or less; and the metal nano-micro-protrusion black body absorbs 95 % or more of ultraviolet light, visible light, or infrared light that is incident at an angle within 30° with respect to the growth direction of the nano-micro protrusions. Also provided is a method for producing the nano-micro-protrusion black body.

IPC Classes  ?

• G02B 5/00 - Optical elements other than lenses
• B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
• B82Y 40/00 - Manufacture or treatment of nanostructures
• C23C 26/00 - Coating not provided for in groups

Abstract

One of the problems to be solved by the present invention is the provision of a basic electronic element that, even when the element size is reduced, exhibits intrinsic essential element performance that is commensurate to the element design, and an integrated semiconductor device that is configured by integrating the basic electronic element. The solution provided by the present invention is a MOS-FET having a 3D structure, the MOS-FET being provided with: a channel region that includes a plurality of different crystalline surfaces; a gate electrode that is provided facing the plurality of crystalline surfaces of the channel region; a gate insulating film that is provided between the gate electrode and the channel region; and first and second silicide regions that are provided facing each other in the direction of the flow of the channel region current so as to sandwich the channel region therebetween.

IPC Classes  ?

• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

An etching method whereby Si substrates having surfaces of exceptional smoothness and planarity can be mass-produced is provided. During an etching process in which the surface of an Si substrate (101) is supplied with a fluonitric acid solution, the temperature of the surface is measured at a plurality of predetermined locations by a thermocamera (1604), and the surface is heated or cooled, depending on the measured values.

IPC Classes  ?

• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

Disclosed is a silicon wafer wherein a plurality of terraces are formed on the surface with steps which are formed of a monatomic layer. There is no slip line in the wafer.

IPC Classes  ?

• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting

Abstract

Provided is an optical film that has a higher refractive index than titanium oxide films. The optical film comprises an aluminum-titanium composite oxide or a gallium-titanium composite oxide. In the aluminum-titanium composite oxide, the ratio of Al to Ti (Al/Ti) is 17/83 or less in atomic ratio. In the gallium-titanium composite oxide, the ratio of Ga to Ti (Ga/Ti) is 20/80 or less in atomic ratio. The aluminum-titanium composite oxide or the gallium-titanium composite oxide comprises crystals of a rutile structure.

IPC Classes  ?

• G02B 1/02 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of crystals, e.g. rock-salt, semiconductors
• C23C 14/08 - Oxides
• G02B 1/11 - Anti-reflection coatings

Abstract

Provided is a technique which is advantageous for increasing the operating speed of an integrated circuit. This invention relates to a semiconductor device comprising an n-type transistor formed on the (551) surface of a silicon substrate. The layer thickness of the silicide layer region contacting an n-type transistor diffusion region (high-concentration region) is 5nm or less, and the layer thickness of a metal layer region contacting said silicide layer is 25-400nm, wherein, in said layer thickness relation, the barrier height between the diffusion region and the silicide layer region has a minimum value.

IPC Classes  ?

• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups

Abstract

Provided is a heat dissipation member which can ensure a sufficient area of contact with the open air and thus exhibits excellent heat dissipation characteristics and which can achieve a remarkable weight reduction. This heat dissipation member has a knitted structure of a thin metal wire.

IPC Classes  ?

• H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks

Abstract

A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.

IPC Classes  ?

• H01L 21/425 - Bombardment with radiation with high-energy radiation producing ion implantation
• H01L 21/42 - Bombardment with radiation

Abstract

The objective of the present invention is to provide a reaction tank that can markedly increase production efficiency as reaction products do not substantially adhere to the inner wall surface thereof even with continuous use. Furthermore, the objective of the present invention is to provide a method that is for producing a structure of a production process treatment tank and a production process treatment tank using the structure and that, by means of the method for producing, can easily provide the structure of a production process treatment tank and the production process treatment tank using the structure such that reaction products do not substantially adhere to the inner wall surface thereof even with continuous use. The reaction tank is provided with a film comprising PFA at the inner wall surface of a main tank body. Also, the method for producing the reaction tank and the structure thereof provides a PFA layer to the inner wall surface by means of melting/remelting.

IPC Classes  ?

• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• B08B 17/02 - Preventing deposition of fouling or of dust
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 26/00 - Coating not provided for in groups
• C25D 11/18 - After-treatment, e.g. pore-sealing
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

Abstract

Provided are: an assessment aid which can be used as a phantom (pseudo-lesion) in the imaging and assessment of digital X-ray video images, and in particular whereby digital X-ray video images in a plurality of X-ray absorption regions having different X-ray absorptivities can be assessed; and an assessment device provided with the assessment aid. This assessment aid is used in the imaging and assessment of digital X-ray video images, and comprises: a fixed plate (plate-shaped body) having a plurality of regions of different X-ray absorptivities; a turntable (displacement body) having a plurality of wires (line members) rotatably (displaceably) provided to the fixed plate so as to transect X-rays with which the fixed plate is irradiated; and a drive motor (drive unit) for rotating (displacing) the turntable with respect to the fixed plate. Preferably, the fixed plate has different thicknesses and/or constituent materials in the plurality of regions and thereby has different X-ray absorptivities in each of the regions.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment

Abstract

[Problem] To reduce the size of a solid oxide fuel cell, while improving the power generation efficiency per unit volume. [Solution] A SOFC (1) comprises an element main body (10), a first external electrode (11), and a second external electrode (12). The element main body (10) is obtained by alternately laminating a plurality of internal electrode layers (2) for the anode and a plurality of internal electrode layers (3) for the cathode, and a solid electrolyte layer (4) is arranged between one internal electrode layer (2) and one internal electrode layer (3). In addition, the element main body (10) is provided with partition parts (5), each of which connects two adjacent solid electrolyte layers (4) with each other, at non-overlapping portions (6) where the internal electrode layers (2) for the anode and the internal electrode layers (3) for the cathode do not overlap each other. The plurality of internal electrode layers (2) for the anode, the plurality of internal electrode layers (3) for the cathode, the solid electrolyte layers (4) and the partition parts (5) are integrally configured. The plurality of internal electrode layers (2) for the anode and/or the plurality of internal electrode layers (3) for the cathode penetrate the element main body (10) from a predetermined position of the surface of the element main body (10) to a position that is different from the predetermined position.

IPC Classes  ?

• H01M 8/02 - Fuel cellsManufacture thereof Details
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
• H01M 8/24 - Grouping of fuel cells, e.g. stacking of fuel cells

Abstract

[Problem] The purpose of the invention is to provide a reaction vessel which uses an aluminum alloy vessel main body which has high thermal conductivity and in which excellent heat removal efficiency is expected, and which is capable of reducing generation of polymeric scales and microscopic condensates. [Solution] The aluminum alloy reaction vessel according to the present invention is characterized in that the inner surface of the aluminum alloy vessel main body is formed with an anodic oxide coating and an antistaining coating in this order.

IPC Classes  ?

• C08F 2/00 - Processes of polymerisation

Abstract

This microimaging probe is substantially more compact than conventional microimaging probes. A GRIN lens is fixed on the front end side of an image fiber such that the front end surface of the image fiber and the back end surface of the GRIN lens face one another at a prescribed interval. By allowing the front end surface of the image fiber and the back end surface of the GRIN lens to face one another at a prescribed interval, an enlarged image is formed on the front end surface of an image fiber of a different diameter, and images can be efficiently transmitted.

IPC Classes  ?

• A61B 1/00 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor

Abstract

Provided is a contactless power transmission system that is of an electromagnetic induction type and that ameliorates a worsening of transmission efficiency. The contactless power transmission system that is of an electromagnetic induction type and that contactlessly transmits power from a power supply device having a primary-side power supply coil and a power reception device having a secondary-side power reception coil is equipped with a matching coil that performs load matching for efficiently transmitting the magnetic flux generated at the primary-side power supply coil to the secondary-side power reception coil.

IPC Classes  ?

• H02J 17/00 - Systems for supplying or distributing electric power by electromagnetic waves

Abstract

This semiconductor device comprises: a gate electrode provided on a substrate and containing Al and Zr; a gate insulating film provided so as to cover at least the upper surface of the gate electrode and containing Al and Zr, and an insulator layer provided on the substrate so as to surround the gate electrode.

IPC Classes  ?

• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 29/786 - Thin-film transistors

Abstract

Provided is a method that is for producing a semiconductor device and that is provided with: a first sacrificial layer forming step for forming a first sacrificial layer that contacts at least a portion of a first semiconductor layer and that has a higher solid solubility of impurities contained in the first semiconductor layer than that of the first semiconductor layer; an annealing step for annealing the first sacrificial layer and the first semiconductor layer; an elimination step for eliminating the first sacrificial layer via a wet process; a step for forming an insulating layer that covers at least a portion of the first semiconductor layer and/or a step for etching a portion of the first semiconductor layer; and an electrode-forming step for forming an electrode layer that is electrically connected to the first semiconductor layer.

IPC Classes  ?

• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/3065 - Plasma etchingReactive-ion etching
• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate

Abstract

Provided is a method that is for producing a semiconductor device, produces a gallium nitride-based semiconductor device, and is provided with: a first semiconductor layer forming step that forms a first semiconductor layer comprising a gallium nitride-based semiconductor; and a recess-forming step that, using a bromine-based gas, dry etches a portion of the first semiconductor layer via a microwave plasma process, forming a recess.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/786 - Thin-film transistors
• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate

Abstract

This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor.

IPC Classes  ?

• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
• H01L 21/8234 - MIS technology
• H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

An electrode device for an electrochemical sensor chip includes an insulation sheet having an insulating property and including a top surface and a bottom surface opposite to each other in a thickness direction, and electrode members having a conductivity and held by the insulation sheet with the electrode members piercing the insulation sheet in a thickness direction, one ends of the electrode members located on the top surface side of the insulation sheet being connected to an analyte, the other ends located on the bottom surface side of the insulation sheet being connected to an electrodes of a transducer.

IPC Classes  ?

• G01N 27/416 - Systems
• G01N 27/30 - Electrodes, e.g. test electrodesHalf-cells
• G01N 33/487 - Physical analysis of biological material of liquid biological material

Abstract

An electrode device for an electrochemical sensor chip includes an insulation sheet having an insulating property and including a top surface and a bottom surface opposite to each other in a thickness direction, and electrode members having a conductivity and held by the insulation sheet in portions piercing the insulation sheet in a thickness direction, one ends of the electrode members located on the top surface side of the insulation sheet being connected to the analyte, other ends located on the bottom surface side of the insulation sheet being connected to the electrodes of the transducer, recesses for trapping the analyte being formed in the top surface of the insulation sheet so as to correspond to the electrode members, the one ends of the electrode members being exposed at a bottom of the recesses.

IPC Classes  ?

• G01N 27/416 - Systems

Abstract

An electrode device for an electrochemical sensor chip includes an insulation sheet having an insulating property and including a top surface and a bottom surface opposite to each other in a thickness direction, and electrode members having a conductivity and held by the insulation sheet with the electrode members piercing the insulation sheet in a thickness direction, one ends of the electrode members located on the top surface side of the insulation sheet being connected to an analyte, the other ends located on the bottom surface side of the insulation sheet being connected to an electrodes of a transducer, at least the one ends of the electrode members being made of a mixture of conductive particles and an insulating material.

IPC Classes  ?

• G01N 27/416 - Systems
• G01N 27/30 - Electrodes, e.g. test electrodesHalf-cells
• G01N 33/487 - Physical analysis of biological material of liquid biological material

Abstract

A measurement method that includes irradiating a void-arranged structure on which an analyte has been held with an electromagnetic wave, detecting an electromagnetic wave scattered on the void-arranged structure, and determining a property of the analyte on the basis of at least one parameter, the parameter including the amount of change in the ratio of the detected electromagnetic wave to the irradiated electromagnetic wave at a specific frequency between the presence and the absence of the analyte.

IPC Classes  ?

• G01N 21/25 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
• G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation

Abstract

Provided is an advantageous technology for evenly etching a substrate. The etching device is configured so as to etch the substrate having a first side and a second side on the first side with an etching fluid comprising hydrogen fluoride and nitric acid, and comprises: a chuck that holds the second side of the substrate; a rotation mechanism that rotates the substrate by rotating the chuck; a first supplying portion that supplies the etching fluid comprising hydrogen fluoride and nitric acid to a central portion of the first side of the substrate being rotated by the rotation mechanism; and a second supplying portion that supplies a replenisher to an outer portion that is further out from the central portion of the first side of the substrate being rotated by the rotation mechanism. The replenisher comprises one, and excludes an other, of hydrogen fluoride and nitric acid.

IPC Classes  ?

• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

In this multilayer wiring board (100) having a high-density wiring region and a high-frequency transmission region mounted to the same substrate, the high-frequency transmission region is caused to be able to transmit a signal frequency of at least 40 GHz by means of using a resin material having a dielectric dissipation factor (tanδ) that is less than 0.01 as the material of an insulating layer used in at least the high-frequency transmission region. The insulating layer is formed from a polymerizable composition that contains a cycloolefin monomer, a polymerization catalyst, a cross-linking agent, a bifunctional compound having two vinylidene groups, and a trifunctional compound having three vinylidene groups, the ratio of the contained bifunctional compound and trifunctional compound as a weight ratio value (bifunctional compound/ trifunctional compound) being 0.5-.1.5.

IPC Classes  ?

• H05K 3/46 - Manufacturing multi-layer circuits
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H05K 1/02 - Printed circuits Details

Abstract

The problem addressed by the present invention is providing a method for manufacturing a semiconductor device that can make use of the advantages of a low permittivity CFx film and that can prevent deterioration of characteristics because of CMP treatment in a semiconductor device with a multilayer wiring structure having a CFx film for an interlayer insulating film. This method for manufacturing a semiconductor device comprises: a step (a) for forming a CFx film; a step (b) for forming a recessed part of a prescribed pattern on the CFx film; a step (c) for providing a wiring layer embedded in the recessed part and going across the top of the CFx film; a step (d) for eliminating excess wiring layer on the CF x film other than within the recessed part and exposing the surface of the CFx film. Before or after the step (b), a step (e) for nitriding the surface of the CFx film is provided.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• C23C 16/32 - Carbides
• H01L 21/314 - Inorganic layers
• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body

Abstract

Provided is a cathode body that has: a cylindrical cup (30) as a base body; a barrier layer (303), which is provided on the surface of the cylindrical cup (30), and contains SiC; and a film, which is formed on the surface of the barrier layer (303), and contains a boride of a rare-earth element. The cathode body eliminates interdiffusion of the component elements of the base body and the boride.

IPC Classes  ?

• H01J 61/06 - Main electrodes
• H01J 9/02 - Manufacture of electrodes or electrode systems

Abstract

The present invention addresses a problem of providing a method of manufacturing a TSV structure that prevents a substrate from warping even when made thin. This method of manufacturing a semiconductor device comprises integrating semiconductor elements on the obverse of a semiconductor substrate to form at least a part of a circuit, opening holes through the obverse of the semiconductor substrate, forming insulating films and barrier films on inner surfaces of the holes, forming a conductive metal on surfaces of the barrier films so as to fill the holes, processing the reverse of the semiconductor substrate to reduce thickness, causing the conductive metal to protrude, and providing an SiCN film on the reverse of the semiconductor substrate.

IPC Classes  ?

• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
• H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or

Abstract

The purpose of the present invention is to provide a photoelectric conversion member comprising a heat-dissipating mechanism having heat dissipation characteristics superior to those of the prior art. This photoelectric conversion member (1) comprises a first electrode layer (20), an electricity-generating stack (22), and a second electrode layer (26) formed on the electricity-generating stack (22) via a nickel layer (24). A passivation layer (28) composed of a SiCN-containing material is formed on the second electrode layer (26). A heat-dissipating structure (31) is provided on the passivation layer (28). The heat-dissipating structure (31) contains 40-750 parts by weight of an expanded graphite powder (E) per 100 parts by weight of at least one type of polymer (S).

IPC Classes  ?

• H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices

Abstract

The present invention provides an evaluation aid capable of using a digital X-ray image as a phantom (mimic lesion) when the image is captured and evaluated and particularly, evaluating digital X-ray images in a plurality of X-ray absorption regions having different X-ray absorption rates in a collective manner. This evaluation aid is used when a digital X-ray image is captured and evaluated and includes a substrate (plate-like body) having a plurality of regions with different X-ray absorption rates, and steps having the plurality of regions with the different X-ray absorption rates and provided correspondingly to the regions on the substrate. The substrate is preferably different in the X-ray absorption rates in the regions because the thicknesses and/or constituent materials in the plurality of regions are different.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment

Abstract

A method of attaching an object to be measured to a structure causing a diffraction phenomenon; irradiating the structure to which the object to be measured is attached and which causes the diffraction phenomenon with an electromagnetic wave; detecting the electromagnetic wave scattered by the structure causing the diffraction phenomenon; and measuring a characteristic of the object to be measured from the frequency characteristic of the detected electromagnetic wave. The object to be measured is attached directly to the surface of the structure causing the diffraction phenomenon. Thus, the method for measuring the characteristic of an object to be measured exhibits an improved measurement sensitivity and high reproducibility. A structure causing a diffraction phenomenon and used for the method, and a measuring device are provided.

IPC Classes  ?

• G01J 3/28 - Investigating the spectrum

Abstract

A three-dimensional data generating apparatus comprises: a model creating unit (1) that uses three-dimensional face data of a plurality of persons as learning data to generates a plurality of three-dimensional shapes of a face of a person projected onto a projection space by varying the viewpoint thereto, obtains the three-dimensional coordinates of each of a plurality of points on the three-dimensional shapes, conducts a principal component analysis for the three-dimensional coordinates and drawing brightness of the face to obtain the average vector and base vector, and creates a model of the face of the person wherein the three-dimensional coordinates and drawing brightness is expressed as a linear sum of the average vector and base vector, and model parameters; a fitting learning unit (2) that conducts fitting by deforming the model so as to match the face of the person within an input image, and generates three-dimensional data of the face of the person within the input image; and a fitting execution unit (3).

IPC Classes  ?

• G06T 7/60 - Analysis of geometric attributes
• G06T 15/00 - 3D [Three Dimensional] image rendering

Abstract

Provided is a screw vacuum pump wherein reduction of the dimension in the longitudinal direction of a rotary shaft is achieved, and the flexibility of design of pump components is ensured. A screw pump (100) is provided with a male rotor (110), a female rotor (120), a stator (130), and a drive motor (140). A screw gear portion (111) of the male rotor (110), a screw gear portion (121) of the female rotor (120), and the stator (130) define a gas operation chamber in cooperation with one another. The stator (130) has an air intake port (134) and an air discharge port (135). At least either of the male rotor (110) and the female rotor (120) has rotor hollow portions (112, 122) which are open in at least one end face of each rotor in the longitudinal direction of the male rotor (110) and/or the female rotor (120). At least a part of the drive motor (140) is stored within the rotor hollow portions (112, 122).

IPC Classes  ?

• F04C 18/16 - Rotary-piston pumps specially adapted for elastic fluids of intermeshing-engagement type, i.e. with engagement of co-operating members similar to that of toothed gearing of other than internal-axis type with toothed rotary pistons with helical teeth, e.g. chevron-shaped, screw type
• F04C 25/02 - Adaptations for special use of pumps for elastic fluids for producing high vacuum

Abstract

Disclosed is a method for manufacturing a semiconductor device comprising an element isolation region, which comprises: a step wherein a semiconductor substrate is provided with a shallow trench for forming the element isolation region; a step wherein a coating liquid is applied over the semiconductor substrate including the sallow trench; and a step wherein the thus-coated coating film is modified into an insulating material for element isolation. The coating liquid contains one or more compositions represented by the following general formula: ((CH3)nSiO2-n/2)x(SiO2)1-x (wherein n = 1-3 and 0 ≤ x ≤ 1.0), and a solvent. The above-described modification step has a step wherein the coating film is subjected to a heat treatment in an oxidizing atmosphere at a reduced pressure of 10-200 Torr, thereby being modified into an SiO2 film. In the modification step, the coating film is modified into an SiO2 film that is free from granulation and/or formation of voids.

IPC Classes  ?

• H01L 21/76 - Making of isolation regions between components
• H01L 27/08 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind

Abstract

Provided is metalworking equipment that does not require waste oil disposal or product cleaning work, prevents oxidation of a metal workpiece, and avoids producing vibrations in the area being machined even if a large quantity of a liquid coolant is supplied to the part being machined. This enables metalworking to be achieved at high speed and with high precision. The metalworking equipment (100) is equipped with a tool (121) that machines a metal workpiece (W), and a liquid coolant supply means (130), which supplies a liquid coolant (L) to the part being machined (A), which is positioned between the tool (121) and the metal workpiece (W). The liquid coolant (L) is formed by performing a degassing process that removes dissolved gases, and a hydrogenation process that adds hydrogen, with respect to water.

IPC Classes  ?

• B23Q 11/10 - Arrangements for cooling or lubricating tools or work
• C10M 101/02 - Petroleum fractions
• C10M 101/04 - Fatty oil fractions
• C10M 173/00 - Lubricating compositions containing more than 10% water
• C10N 30/00 - Specified physical or chemical property which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
• C10N 30/10 - Inhibition of oxidation, e.g. anti-oxidants
• C10N 40/22 - Metal working with essential removal of material

Abstract

A phenomenon was observed in which an LaB6 film deposited by sputtering had impaired crystallinity. When an LaB6 film is deposited on a substrate by sputtering, the sputtering is conducted, in an atmosphere to which nitrogen gas has been added, directly on the substrate or through a film comprising a nitride of a component of the substrate. Thus, an LaB6 film having excellent crystallinity is obtained.

IPC Classes  ?

• H01J 9/02 - Manufacture of electrodes or electrode systems
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• H01J 61/06 - Main electrodes
• H01J 61/067 - Main electrodes for low-pressure discharge lamps

Abstract

Disclosed is a novel bisphosphate compound that can be used with a wide range of reaction substrates and reactions as a catalyst for asymmetric reactions and can achieve an asymmetric reaction with a high yield and high asymmetric yield. The bisphosphate compound has a tetraaryl skeleton given by general formula (1). An optically active amide aldehyde is obtained in the asymmetric reaction by reacting an amide diene and an unsaturated aldehyde compound in the presence of this optically active bisphosphate compound. Asymmetric Diels-Alder and other reactions that were difficult with conventional monophosphate compounds can be made to progress efficiently; therefore, optically active amide aldehydes, optically active β-amino derivatives, optically active diamine compounds, optically active pyrrolidine derivatives and optically active dihydropyran derivatives useful as medicines, agricultural chemicals and chemical products as well as intermediates for the same can be produced by a method that can be implemented industrially.

IPC Classes  ?

• C07F 9/6574 - Esters of oxyacids of phosphorus
• C07C 269/06 - Preparation of derivatives of carbamic acid, i.e. compounds containing any of the groups the nitrogen atom not being part of nitro or nitroso groups by reactions not involving the formation of carbamate groups
• C07C 271/18 - Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of hydrocarbon radicals substituted by doubly-bound oxygen atoms
• C07C 271/24 - Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atom of at least one of the carbamate groups bound to a carbon atom of a ring other than a six-membered aromatic ring
• C07D 307/54 - Radicals substituted by carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
• C07B 53/00 - Asymmetric syntheses
• C07B 61/00 - Other general methods

Abstract

A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.

IPC Classes  ?

• H01L 21/52 - Mounting semiconductor bodies in containers

Abstract

Disclosed is a silicon wafer wherein a plurality of terraces are formed on the surface with steps which are formed of a monatomic layer. There is no slip line in the wafer.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C30B 29/06 - Silicon
• C30B 33/02 - Heat treatment
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate

Abstract

Disclosed is a machine tool for machining screw rotors, capable of machining a large number of high-precision screw rotors having variable lead and tilt angles at low cost in a short time without requiring enormous machining workload and thereby capable of supplying a large number of screw-type vacuum pump at low cost. Also disclosed is a method of machining screw rotors using the same. Specifically, a machine tool (200) for machining screw rotors comprises a spindle (211); a headstock (210); a tool stock (220); a tool (221); a C-axis serving as the rotational axis of the spindle (211); X-, Z-, and Y-axes serving as moving directions of the tool stock (220); an A-axis for adjusting the rake angle of the tool (221) with respect to a workpiece (W) to be machined by rotating the tool (221) in accordance with the lead angle of a screw rotor (120); and a numerical control means (230). Also disclosed is a method of machining screw rotors using the same.

IPC Classes  ?

• B23F 15/08 - Making intermeshing rotors, e.g. of pumps
• B23F 23/12 - Other devices, e.g. tool holdersChecking devices for controlling workpieces in machines for manufacturing gear teeth
• F04C 25/02 - Adaptations for special use of pumps for elastic fluids for producing high vacuum

Abstract

Disclosed is ferritic stainless steel which can be used around 475°C for a long period of time. Specifically disclosed is ferritic stainless steel for high temperature use, which contains 12.0-20.0% by atom of Cr and 5.0-20.0% by atom of Al, with the balance made up of an Fe component. The Cr and Al contents are within the region bounded by point A (Cr: 12% by atom, Al: 5% by atom), point B (Cr: 15% by atom, Al: 10.5% by atom), point C (Cr: 17% by atom, Al: 12% by atom), point D (Cr: 20% by atom, Al: 13% by atom), point F (Cr: 20% by atom, Al: 20% by atom) and point G (Cr: 12% by atom, Al: 20% by atom) as shown in fig. 8.

IPC Classes  ?

• C22C 38/00 - Ferrous alloys, e.g. steel alloys
• C22C 38/18 - Ferrous alloys, e.g. steel alloys containing chromium
• C22C 38/28 - Ferrous alloys, e.g. steel alloys containing chromium with titanium or zirconium

Abstract

Provided is an Al alloy member with an excellent mechanical strength that is sufficient for use in large-scale manufacturing apparatuses. The Al alloy member is characterized in that, in mass %, Mg concentration is 5.0% or less, Ce concentration is 15% or less, Zr concentration is 0.15% or less, the balance comprises Al and unavoidable impurities, the elements of the unavoidable impurities are respectively 0.01% or less, and the Vickers hardness of the Al alloy member is greater than 30.

IPC Classes  ?

• B32B 1/02 - Receptacles, e.g. tanks
• C25D 11/04 - Anodisation of aluminium or alloys based thereon
• C25D 11/06 - Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
• C22C 21/00 - Alloys based on aluminium

Abstract

Disclosed is a surface protective film which is capable of suppressing the entrance of a corrosive gas more than conventional surface protective films. Specifically disclosed is a surface protective film which contains yttria (Y2O3) as a main component and also contains cerium. Since the surface protective film contains cerium, defects such as micropores in the film are reduced, thereby enabling suppression of the entrance of a corrosive gas.

IPC Classes  ?

• C01F 17/00 - Compounds of rare earth metals
• F04B 39/12 - CasingsCylindersCylinder headsFluid connections
• F04C 25/02 - Adaptations for special use of pumps for elastic fluids for producing high vacuum
• F04C 29/12 - Arrangements for admission or discharge of the working fluid, e.g. constructional features of the inlet or outlet
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

2/g.

IPC Classes  ?

• F16K 31/02 - Operating meansReleasing devices electricOperating meansReleasing devices magnetic

Abstract

Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.

IPC Classes  ?

• H05K 1/09 - Use of materials for the metallic pattern
• H05K 1/02 - Printed circuits Details
• H05K 3/00 - Apparatus or processes for manufacturing printed circuits
• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
• H05K 3/42 - Plated through-holes
• H05K 3/46 - Manufacturing multi-layer circuits

Abstract

b is twice or more a width W1 of the wiring in the first wiring region 101. The first wiring region 101 and the second wiring region 102 are integrally formed on the same board.

IPC Classes  ?

• H05K 1/03 - Use of materials for the substrate
• H05K 1/11 - Printed elements for providing electric connections to or between printed circuits

Abstract

A measurement method comprising holding an analyte on a void-arranged structure (1), irradiating the void-arranged structure (1) on which the analyte has been held with an electromagnetic wave, detecting an electromagnetic wave scattered on the void-arranged structure (1), and determining a property of the analyte on the basis of at least one parameter, wherein the method is characterized in that the parameter includes the amount of change in the ratio of the detected electromagnetic wave to the irradiated electromagnetic wave at a specific frequency between the presence and the absence of the analyte.

IPC Classes  ?

• G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
• G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation

Abstract

Disclosed is a photoelectric conversion device which comprises a passivation layer that is suitable for a structure provided with a heat dissipation mechanism. Specifically disclosed is a photoelectric conversion device (1) which comprises a first electrode layer (20), a single power-generating laminate (22) that is provided with an nip structure formed of amorphous silicon (a-Si), and a second electrode layer (26) that is composed of Al and formed on the power-generating laminate (22) with a nickel layer (24) interposed therebetween. A passivation layer (28), which is configured of a material containing SiCN, is formed on the second electrode layer (26). A heat sink (30) (that is formed, for example, of Al) is mounted on the passivation layer (28) with an adhesive layer (29) interposed therebetween.

IPC Classes  ?

• H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices

Abstract

Disclosed is a semiconductor device which is characterized by comprising: a gate electrode that is provided on a substrate and contains Al or an Al alloy; a gate insulating film that is so formed as to cover at least the upper surface of the gate electrode and contains an anodic oxide film that is obtained by anodizing the Al or Al alloy of the gate electrode; and an insulator layer that is so formed on the substrate as to surround the gate electrode and has a thickness that is substantially equal to the total of the thickness of the gate electrode and the thickness of the gate insulating film formed on the upper surface of the gate electrode.

IPC Classes  ?

• H01L 21/336 - Field-effect transistors with an insulated gate
• G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/283 - Deposition of conductive or insulating materials for electrodes
• H01L 21/312 - Organic layers, e.g. photoresist
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/786 - Thin-film transistors

Abstract

A film deposition method is disclosed in which a thin film comprising manganese is formed on an object to be treated (W) which has, formed on a surface thereof, an insulating layer (122) constituted of a low-k film and having a recess (2). The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which the surface of the hydrophilized insulating layer is subjected to a film deposition treatment with a manganese-containing material to form a thin film comprising manganese thereon. Thus, a thin film comprising manganese, e.g., an MnOx film, is efficiently formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

IPC Classes  ?

• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• C23C 16/02 - Pretreatment of the material to be coated
• C23C 16/20 - Deposition of aluminium only
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
• H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another

Abstract

Provided is an electron device wherein, as it is revealed that, among transparent conductive layers, a zinc oxide layer has a function to prevent natrium from spreading, the zinc oxide layer is used as an electrode of the electron device, and is also used as a spread prevention layer for preventing natrium from spreading from a glass substrate.

IPC Classes  ?

• H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices
• H01J 29/86 - VesselsContainersVacuum locks

Abstract

First, a mixed salt is heated to produce a melt (S101). Next, a mold for core molding is heated to within a temperature range of 0.52 x Tm to 0.7 x Tm (S102). It should be noted that Tm is the liquidus temperature of the mixed salt expressed as an absolute temperature (K). Then the above-mentioned melt is poured under pressure into the mold heated as described above (S103). The melt is hardened inside the mold to form the salt core for casting (S104).

IPC Classes  ?

• B22C 9/10 - CoresManufacture or installation of cores
• B22C 13/12 - Moulding machines for making moulds or cores of particular shapes for cores
• B22D 17/00 - Pressure die casting or injection die casting, i.e. casting in which the metal is forced into a mould under high pressure

Abstract

Disclosed is an electrodialyzer the power of which is effectively saved. The electrodialyzer electrically dialyzes water to be processed while a voltage substantially not causing current to flow is applied between the anode and the cathode.

IPC Classes  ?

• C02F 1/469 - Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis
• B01D 61/46 - Apparatus therefor

Abstract

Provided is a magnetoresistive element of a spin injection write type that is thermally stable and at the same time is capable of inverting a magnetization at a low current, and also provided is a magnetic memory using the magnetoresistive element. The magnetoresistive element comprises: a base layer (12); a first magnetic layer (13) provided on the base layer, having an easy axis of magnetization in a vertical direction to the film surface, and being variable in magnetization direction; a first non-magnetic layer (15) provided on the first magnetic layer; and a second magnetic layer (17) provided on the first non-magnetic layer, having an easy axis of magnetization in a vertical direction to the film surface, and fixed in magnetization direction. The first magnetic layer has a DO22 structure or an L10 structure and includes a ferrimagnetic layer, the c-axis of which is oriented toward a vertical direction to the film surface. The magnetization direction of the first magnetic layer is variable according to the current flowing through the first magnetic layer, the first non-magnetic layer, and the second magnetic layer.

IPC Classes  ?

• H01L 43/08 - Magnetic-field-controlled resistors
• H01F 10/12 - Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
• H01F 10/28 - Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
• H01L 21/8246 - Read-only memory structures (ROM)
• H01L 27/105 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
• H01L 43/10 - Selection of materials

Abstract

A method for attaching an object to be measured to a structure (1) causing a diffraction phenomenon, irradiating the structure (1) to which the object to be measured is attached and which causes the diffraction phenomenon with an electromagnetic wave, detecting the electromagnetic wave scattered by the structure (1) causing the diffraction phenomenon, and measuring a characteristic of the object to be measured from the frequency characteristic of the detected electromagnetic wave. The method is characterized in that the object to be measured is attached directly to the surface of the structure (1) causing the diffraction phenomenon. Thus, the method for measuring the characteristic of an object to be measured exhibiting an improved measurement sensitivity and a high reproducibility, a structure (1) causing a diffraction phenomenon and used for the method, and a measuring device are provided.

IPC Classes  ?

• G01N 21/01 - Arrangements or apparatus for facilitating the optical investigation
• G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
• G01N 21/47 - Scattering, i.e. diffuse reflection
• G01N 33/566 - ImmunoassayBiospecific binding assayMaterials therefor using specific carrier or receptor proteins as ligand binding reagent
• G01N 35/02 - Automatic analysis not limited to methods or materials provided for in any single one of groups Handling materials therefor using a plurality of sample containers moved by a conveyor system past one or more treatment or analysis stations

Abstract

On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).

IPC Classes  ?

• H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

Abstract

Disclosed is a liquid sodium battery wherein two electrode members that sandwich a partition made of a solid substance that transmits Na ions are constructed with a metal having a work function which has an absolute value that is lower than the absolute value of the work function of sodium and with a metal having a work function which has an absolute value that is higher than the absolute value of the work function of sodium.

IPC Classes  ?

• H01M 10/39 - Accumulators not provided for in groups working at high temperature

Abstract

−3 near a surface of the semiconductor substrate.

IPC Classes  ?

• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting

Abstract

A carbon material dispersion characterized by comprising a dispersion medium and, dispersed therein, a carbon material having a fluorinated surface, the carbon material having been obtained by bringing a treating gas having a fluorine concentration of 0.01-100 vol.% into contact with a carbon material under the conditions of 150-600ºC.

IPC Classes  ?

• C01B 31/02 - Preparation of carbon; Purification

Abstract

The insulation breakdown voltage of a coating insulating film used in an element isolation region is improved.  A coating film formed from a composition that is obtained by adding one or more kinds of compounds, which contains a different element M capable of forming an oxide in an amount of 0.5-11.1 mol% relative to the mole number of Si, to a compound represented by the following general formula: ((CH3)nSiO2-n/2)x(SiO2)1-x (wherein n = 1-3 and 0 ≤ x ≤ 1.0), is used as an insulating coating film that is used in an element isolation region.

IPC Classes  ?

• H01L 21/76 - Making of isolation regions between components
• H01L 21/314 - Inorganic layers
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Abstract

In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding table in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding table to cause a self-bias voltage to generate on the surface of the substrate.  The RF power is applied several times in the form of pulses.

IPC Classes  ?

• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

Provided are photovoltaic elements that are equipped with an n-i-p structure formed with amorphous silicon and with which energy conversion efficiency is improved by a structure wherein an n+-type a-Si layer contacts a transparent electrode formed by an n+-type ZnO layer. The impact on global resources is thereby kept to a minimum, and photovoltaic elements and solar batteries with large surface area and high power output can be realized.

IPC Classes  ?

• H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices

Abstract

n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.

IPC Classes  ?

• F16K 31/12 - Operating meansReleasing devices actuated by fluid
• F16K 31/36 - Operating meansReleasing devices actuated by fluid in which fluid from the conduit is constantly supplied to the fluid motor

Abstract

Disclosed is a brewed liquid filtering system which enables a reduction in production cost and has a structure suitable for cleaning of the filter. This brewed liquid filtering system (1) has a first branching pipe and a second branching pipe. The first branching pipe and the second branching pipe are provided with a first filter and a second filter. The first branching pipe is provided with first branching pipe valves (V1-1), (V1-2) which interpose the first filter; in addition, first cleaning pipes (10-31), (10-32) which are provided nearer the first filter than the first branching pipe valves (V1-1), (V1-2) are connected to the first branching pipe. The second branching pipe is provided with second branching pipe valves (V2-1), (V2-2) which interpose the second filter; in addition, second cleaning pipes (10-33), (10-34) which are provided nearer the second filter than the second branching pipe valves (V2-1), (V2-2) are connected to the second branching pipe.

IPC Classes  ?

• C12H 1/16 - Pasteurisation, sterilisation, preservation, purification, clarification, or ageing of alcoholic beverages without precipitation by physical means, e.g. irradiation
• C12G 3/02 - Preparation of other alcoholic beverages by fermentation

Abstract

Provided is a method for manufacturing a semiconductor device realizing a contact of low resistance ratio. In the state that a first metal layer in contact with a semiconductor is coated with a second metal layer for preventing oxidization, only the first metal layer is silicided so as to form a silicide layer not mixed with oxygen.  The first metal layer is made from such a metal material that a difference in the work function from the semiconductor is a predetermined value.  The second metal layer is made from such a metal material that no reaction with the first metal layer is caused by the anneal temperature.

IPC Classes  ?

• H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 21/8238 - Complementary field-effect transistors, e.g. CMOS
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/786 - Thin-film transistors

Abstract

The objective is to achieve improved sputter process efficiency and production efficiency for a magnetron sputtering method that uses a rectangular target. This magnetron sputtering device (10) is an upright, transit-type sputtering device that forms a sputter film while standing substrates (PL), (PR) upright and causing them to move (transit), and that is equipped with a single or a shared magnetic field generation mechanism (42) and symmetrical targets (12L), (12R) to the left/right (top/bottom in the figure), thus configuring a sputtering device that can process two substrates simultaneously.

IPC Classes  ?

• C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering
• C23C 14/34 - Sputtering
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation

Abstract

In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, it is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and the substrate is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes
• H01J 37/34 - Gas-filled discharge tubes operating with cathodic sputtering
• C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering

Abstract

It is possible to obtain a cathode body which can maintain a long service life even when a large current has flown.  Provided is a magnetron cathode body including as a base material, a metal of a high melting point having an electron emission material inside and coated by borax of rare earth.  The electron emission material and the metal of a high melting point are preferably La2O3 and W, respectively.  The borax of rare earth is preferably LaB6.

IPC Classes  ?

• H01J 23/04 - Cathodes
• H01J 1/14 - Solid thermionic cathodes characterised by the material
• H01J 9/04 - Manufacture of electrodes or electrode systems of thermionic cathodes
• H01J 23/00 - Details of transit-time tubes of the types covered by group

Abstract

2 or less is realized by setting a work function difference of 0.2 eV or less between an electrode and the silicon. Thus, the semiconductor device can operate on a frequency of 10 GHz or higher.

IPC Classes  ?

• H01L 21/70 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereofManufacture of integrated circuit devices or of specific parts thereof

Abstract

When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.

IPC Classes  ?

• G21K 5/10 - Irradiation devices with provision for relative movement of beam source and object to be irradiated
• H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
• H05H 3/02 - Molecular or atomic-beam generation, e.g. resonant beam generation
• A61N 5/00 - Radiation therapy
• G21G 5/00 - Alleged conversion of chemical elements by chemical reaction
• G21G 4/00 - Radioactive sources

Abstract

Provided is an Al alloy member with an excellent mechanical strength that is sufficient for use in large-scale manufacturing devices. The Al alloy member is characterized in that, in mass%, Mg concentration is 5.0% or less, Ce concentration is 15% or less, Zr concentration is 0.15% or less, the remainder comprises Al and unavoidable impurities, the elements of the unavoidable impurities are respectively 0.01% or less, and the Vickers hardness is greater than 30.

IPC Classes  ?

• C22C 21/00 - Alloys based on aluminium
• C25D 11/04 - Anodisation of aluminium or alloys based thereon
• C25D 11/06 - Anodisation of aluminium or alloys based thereon characterised by the electrolytes used

Abstract

Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.

IPC Classes  ?

• H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
• H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
• H05K 3/18 - Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
• H05K 3/42 - Plated through-holes