Abrégé

A cell or tissue embedding device having an aqueous gel serving as an immunoisolation layer, the aqueous gel containing, as components thereof, a denatured polyvinyl alcohol resin having an activated carbonyl group and a crosslinking agent is highly capable of supplying a physiologically active substance.

Classes IPC  ?

• A61L 27/16 - Matériaux macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
• A61L 27/34 - Matériaux macromoléculaires
• A61L 27/38 - Cellules animales
• A61L 27/54 - Matériaux biologiquement actifs, p. ex. substances thérapeutiques
• C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
• C12N 5/071 - Cellules ou tissus de vertébrés, p. ex. cellules humaines ou tissus humains

Abrégé

To provide a cell or tissue embedding device highly capable of supplying a physiologically active substance, by curbing the reduction of living cells or living tissue in the process of preparing a PVA gel containing the living cells or living tissue. To provide a cell or tissue embedding device highly capable of supplying a physiologically active substance, by curbing the reduction of living cells or living tissue in the process of preparing a PVA gel containing the living cells or living tissue. An aqueous gel to form an immunoisolation layer of a cell or tissue embedding device has, as its component, a polyvinyl alcohol resin having a syndiotacticity of 32 to 40% in triad.

Classes IPC  ?

• C12N 11/04 - Enzymes ou cellules microbiennes immobilisées sur ou dans un support organique piégées à l’intérieur du support, p. ex. dans un gel ou dans des fibres creuses
• C12N 5/00 - Cellules non différenciées humaines, animales ou végétales, p. ex. lignées cellulairesTissusLeur culture ou conservationMilieux de culture à cet effet
• A61K 35/39 - PancréasÎlots de Langerhans
• A61K 47/32 - Composés macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone, p. ex. carbomères

Abrégé

A cell or tissue embedding device having an aqueous gel serving as an immunoisolation layer, the aqueous gel containing, as components thereof, a denatured polyvinyl alcohol resin having an activated carbonyl group and a crosslinking agent is highly capable of supplying a physiologically active substance.

Classes IPC  ?

• A61L 27/16 - Matériaux macromoléculaires obtenus par des réactions faisant intervenir uniquement des liaisons non saturées carbone-carbone
• A61L 27/34 - Matériaux macromoléculaires
• A61L 27/38 - Cellules animales
• A61L 27/54 - Matériaux biologiquement actifs, p. ex. substances thérapeutiques
• C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
• C12N 5/071 - Cellules ou tissus de vertébrés, p. ex. cellules humaines ou tissus humains

Abrégé

The present invention addresses the problem of providing a cell- or tissue-embedding device which suppress the reduction in a living cell or a living tissue, during a process for preparing a PVA gel containing the living cell or living tissue, so as to exhibit an excellent ability to supply a physiologically active substance. An aqueous gel, which is to be used for forming an immunoisolation layer of a cell- or tissue-embedding device, is prepared by using a modified polyvinyl alcohol-based resin (A) having an active carbonyl group and a crosslinking agent (B) as components thereof.

Classes IPC  ?

• A61K 9/00 - Préparations médicinales caractérisées par un aspect particulier
• A61K 35/35 - Tissu graisseuxAdipocytesCellules stromalesTissus conjonctifs
• A61K 35/545 - Cellules souches embryonnairesCellules souches pluripotentesCellules souches pluripotentes induitesCellules souches non caractérisées
• A61K 9/06 - OnguentsExcipients pour ceux-ci
• A61K 35/22 - UrineAppareil urinaire, p. ex. rein ou vessieCellules mésangiales intraglomérulairesCellules mésenchymateuses rénalesGlande surrénale
• A61K 35/26 - LympheGanglions lymphatiquesThymusRateSplénocytesThymocytes
• A61K 35/28 - Moelle osseuseCellules souches hématopoïétiquesCellules souches mésenchymateuses de toutes origines, p. ex. cellules souches dérivées de tissu adipeux
• A61K 35/39 - PancréasÎlots de Langerhans
• A61K 35/407 - FoieHépatocytes
• A61K 35/50 - PlacentaCellules souches placentairesLiquide amniotiqueAmniosCellules souches amniotiques
• A61K 35/55 - Glandes non prévues dans les groupes , p. ex. glandes thyroïdes, parathyroïdes ou pinéales
• A61K 47/12 - Acides carboxyliquesLeurs sels ou anhydrides

Abrégé

By suppressing the loss of living cells or living tissue during the production of a PVA gel that contains living cells or living tissue, the present invention addresses the problem of supplying a cell- or tissue-embedding device that has a high capacity for supplying a biologically active substance. According to the present invention, an aqueous gel for forming an immunoisolation layer for a cell- or tissue-embedding device is formed from a polyvinyl alcohol resin that has a triad syndiotacticity of 32%–40%.

Classes IPC  ?

• C12M 3/00 - Appareillage pour la culture de tissus, de cellules humaines, animales ou végétales, ou de virus
• A61K 35/12 - Substances provenant de mammifèresCompositions comprenant des tissus ou des cellules non spécifiésCompositions comprenant des cellules souches non embryonnairesCellules génétiquement modifiées
• A61K 35/22 - UrineAppareil urinaire, p. ex. rein ou vessieCellules mésangiales intraglomérulairesCellules mésenchymateuses rénalesGlande surrénale
• A61K 35/26 - LympheGanglions lymphatiquesThymusRateSplénocytesThymocytes
• A61K 35/28 - Moelle osseuseCellules souches hématopoïétiquesCellules souches mésenchymateuses de toutes origines, p. ex. cellules souches dérivées de tissu adipeux
• A61K 35/30 - NerfsCerveauYeuxCellules cornéennesLiquide céphalorachidienCellules souches neuronalesCellules précurseurs neuronalesCellules glialesOligodendrocytesCellules de SchwannAstrogliesAstrocytesPlexus choroïdeTissu de moelle épinière
• A61K 35/39 - PancréasÎlots de Langerhans
• A61K 35/407 - FoieHépatocytes
• A61K 35/545 - Cellules souches embryonnairesCellules souches pluripotentesCellules souches pluripotentes induitesCellules souches non caractérisées
• A61K 35/55 - Glandes non prévues dans les groupes , p. ex. glandes thyroïdes, parathyroïdes ou pinéales
• C12N 11/04 - Enzymes ou cellules microbiennes immobilisées sur ou dans un support organique piégées à l’intérieur du support, p. ex. dans un gel ou dans des fibres creuses
• A61P 3/00 - Médicaments pour le traitement des troubles du métabolisme
• A61P 5/00 - Médicaments pour le traitement des troubles du système endocrinien

Abrégé

The present invention addresses the problem of providing a cell- or tissue-embedding device which suppress the reduction in a living cell or a living tissue, during a process for preparing a PVA gel containing the living cell or living tissue, so as to exhibit an excellent ability to supply a physiologically active substance. An aqueous gel, which is to be used for forming an immunoisolation layer of a cell- or tissue-embedding device, is prepared by using a modified polyvinyl alcohol-based resin (A) having an active carbonyl group and a crosslinking agent (B) as components thereof.

Classes IPC  ?

• A61K 9/00 - Préparations médicinales caractérisées par un aspect particulier
• A61K 9/06 - OnguentsExcipients pour ceux-ci
• A61K 35/22 - UrineAppareil urinaire, p. ex. rein ou vessieCellules mésangiales intraglomérulairesCellules mésenchymateuses rénalesGlande surrénale
• A61K 35/26 - LympheGanglions lymphatiquesThymusRateSplénocytesThymocytes
• A61K 35/28 - Moelle osseuseCellules souches hématopoïétiquesCellules souches mésenchymateuses de toutes origines, p. ex. cellules souches dérivées de tissu adipeux
• A61K 35/35 - Tissu graisseuxAdipocytesCellules stromalesTissus conjonctifs
• A61K 35/39 - PancréasÎlots de Langerhans
• A61K 35/407 - FoieHépatocytes
• A61K 35/50 - PlacentaCellules souches placentairesLiquide amniotiqueAmniosCellules souches amniotiques
• A61K 35/545 - Cellules souches embryonnairesCellules souches pluripotentesCellules souches pluripotentes induitesCellules souches non caractérisées
• A61K 35/55 - Glandes non prévues dans les groupes , p. ex. glandes thyroïdes, parathyroïdes ou pinéales
• A61K 47/12 - Acides carboxyliquesLeurs sels ou anhydrides

Abrégé

The present invention addresses the problem of providing a statistical probabilistic means capable of accurately estimating an allele-specific gene expression in various organisms. The inventors have discovered that this problem can be solved by using a computer to perform steps (1) - (4) with respect to data wherein read information for cDNA of a polyploid organism. (1) Digitalization of each isoform in each read and an expected mapping number with respect to each allele of the isoform. (2) Calculation of a total number of expected mappings by means of the total for each isoform in the expected mapping number digitized in (1), and calculation of the portion of each allele in the total number of expected mappings. (3) Calculation of (i) an isoform quantitative ratio and (ii) an allele-specific selection related to the total number of expected mappings calculated in (2). (4) Certification of a convergence value obtained by a loop process for the aforementioned steps as the optimal data for the allele-specific gene expression.

Classes IPC  ?

• G06F 19/20 - pour l'hybridation ou l'expression génique, p.ex. microréseaux, séquençage par hybridation, normalisation, profilage, modèles de correction de bruit, estimation du ratio d'expression, conception ou optimisation de sonde

Abrégé

z. Atom ratios a, b, c, d, e=1−a−b−c−d, x+y, and y related to A-layers satisfy 0.2≤a≤0.7, 0.05≤b≤0.6, 0≤c≤0.3, 0≤d≤0.05, 0≤e≤0.05, 0.3≤x+y≤0.6, and 0≤y≤0.6, respectively. Atom ratios a, b, c, d, e=1−a−b−c−d, x, y, z, and x+y+z related to B-layers satisfy 0.2≤a≤0.7, 0.05≤b≤0.6, 0≤c≤0.3, 0≤d≤0.05, 0≤e≤0.05, 0≤x≤0.6, 0≤y≤0.6, 0

Classes IPC  ?

• C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
• C23C 14/00 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement
• B23C 5/28 - Caractéristiques se rapportant à la lubrification ou au refroidissement
• C23C 28/04 - Revêtements uniquement de matériaux inorganiques non métalliques
• C23C 28/00 - Revêtement pour obtenir au moins deux couches superposées, soit par des procédés non prévus dans un seul des groupes principaux , soit par des combinaisons de procédés prévus dans les sous-classes et
• C23C 14/34 - Pulvérisation cathodique
• C23C 14/50 - Porte-substrat

Abrégé

An evaluation aid is used as a phantom (imitation lesion) when a digital X-ray dynamic image thereof is taken and evaluated for image qualities for X-ray absorption parts having different X-ray absorption ratios. The evaluation aid contains a fixed plate (plate-like body) including a plurality of regions having different X-ray absorption ratios; a rotating disk (movable body) having a plurality of wires (wire rods), the rotating disk capable of rotating (moving) with respect to the fixed plate so that the plurality of wires traverse X-ray with which the fixed plate is irradiated; and a driving motor (driving portion) which rotates (moves) the rotating disk with respect to the fixed plate. It is preferred that thicknesses and/or constituent materials of the plurality of regions of the fixed plate are different from each other, so that these regions have the different X-ray absorption ratios.

Classes IPC  ?

• A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations

Abrégé

n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.

Classes IPC  ?

• G05D 7/06 - Commande de débits caractérisée par l'utilisation de moyens électriques
• G01F 1/684 - Dispositions de structureMontage des éléments, p. ex. relativement à l'écoulement de fluide
• G01F 1/36 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en utilisant des effets mécaniques en mesurant la pression ou la différence de pression la pression ou la différence de pression étant produite par une contraction de la veine fluide
• G01F 5/00 - Mesure d'une fraction du débit volumétrique
• G01F 7/00 - Dispositifs de mesure du débit volumétrique avec plusieurs gammes de mesureCompteurs composés
• G01F 1/40 - Détails de structure des dispositifs de contraction de la veine fluide

Abrégé

An evaluation aid serves as a phantom (imitation lesion) when a digital X-ray image is taken, and evaluation is then carried out through the digital X-ray image. The evaluation aid can simplify evaluating image qualities of a digital X-ray image for X-ray absorption parts having different X-ray absorption ratios all at once. The evaluation aid contains a substrate (plate-like body) including a plurality of regions having different X-ray absorption ratios for taking a digital X-ray image to carry out evaluation. Step members are provided on the plate-like body so as to correspond to the plurality of regions, respectively, where each step member includes a plurality of subregions having different X-ray absorption ratios. Preferably the thicknesses and/or constituent materials of the plurality of regions of the substrate are different from each other in order to have different X-ray absorption ratios in these regions.

Classes IPC  ?

• G01D 18/00 - Test ou étalonnage des appareils ou des dispositions prévus dans les groupes
• A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations

Abrégé

The purpose of the present invention is to provide, from a probability statistics processing viewpoint, a means for optimizing read information that mapped a particular gene locus group such as MHC. The present invention provides a method, computer system and computer program comprising: a step for digitizing the number of expected mappings of the alleles of each particular genetic locus for all reads, in respect to read information for which the correspondence of each read to a particular genetic locus group allele is identified; a step for digitizing the total number of expected mappings; and a step for calculating the proportion of reads allocated to each allele. The foregoing steps are performed repeatedly and the read information is optimized by a computer, and on the basis of the optimized information, the genotype of the particular genetic locus group can be easily and accurately estimated.

Classes IPC  ?

• G06F 19/18 - pour la génomique ou la protéomique fonctionnelle, p.ex. associations génotype-phénotype, déséquilibre de liaison, mutagénèse, génotypage ou annotation génomique, interactions protéines-protéines ou interactions protéines-acides nucléiques
• C12N 15/09 - Technologie d'ADN recombinant
• C12Q 1/68 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismesCompositions à cet effetProcédés pour préparer ces compositions faisant intervenir des acides nucléiques
• G06F 19/24 - pour l'apprentissage automatique, l'exploration de données ou les bio statistiques, p.ex. détection de motifs, extraction de connaissances, extraction de règles, corrélation, agrégation ou classification

Abrégé

A power generating device is disclosed that includes a power generating unit, an inductor, a switch connected to the inductor in series, and a control circuit. The power generating unit includes a piezoelectric element, and upper and lower electrodes disposed on surfaces of the piezoelectric element. The inductor is electrically connected to the electrodes in parallel, with the inductor and a capacitance component constituting a resonance circuit. The control circuit has a driving mode in which it controls the switch to an ON state in synchronism with the voltage generated in the piezoelectric element becoming a peak value. Further, in a rest mode, the control circuit controls the switch to be in an OFF state when the voltage generated in the piezoelectric element has the peak value.

Classes IPC  ?

• H01L 41/113 - Eléments piézo-électriques ou électrostrictifs à entrée mécanique et sortie électrique
• H02N 2/18 - Machines électriques en général utilisant l'effet piézo-électrique, l'électrostriction ou la magnétostriction fournissant une sortie électrique à partir d'une entrée mécanique, p. ex. générateurs

Abrégé

n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.

Classes IPC  ?

• G05D 7/06 - Commande de débits caractérisée par l'utilisation de moyens électriques
• G01F 1/684 - Dispositions de structureMontage des éléments, p. ex. relativement à l'écoulement de fluide

Abrégé

A tool hard film that is to be disposed as coating on a surface of a tool, the tool hard film being a TiCrMoWV oxycarbide, oxynitride, or oxycarbonitride having a phase with a NaCl-type crystal structure as a main phase, the oxycarbide, oxynitride, or oxycarbonitride having fine crystals due to introduction of oxygen.

Classes IPC  ?

• C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement

Abrégé

The present invention addresses the problem of discovering a means for achieving the more proper selection of a Tag SNP to be contained in a nucleic acid probe, which is a probe contained in a DNA microarray or the like and used as a means for carrying out imputation, in the imputation of SNPs. Specifically, it is found that the problem can be solved by a method for selecting a Tag SNP that is used as a means for imputing information on SNPs of human genome using human genome information that includes information on a group of SNPs, in which genotypes of multiple individuals are specified, for the purpose of constituting a group of nucleic acid probes corresponding to the Tag SNP, wherein the sum total of mutual information amounts between Tag SNP candidates and Target SNPs for the candidates is employed as a measure for the selection of the Tag SNP. Thus, provided are: a computer system and a computer program which are developed on the basis of the above-mentioned principle; a DNA microarray which is equipped with a group of nucleic acid probes corresponding to a Tag SNP selected by the aforementioned means; and a method for producing the DNA microarray.

Classes IPC  ?

• G06F 19/20 - pour l'hybridation ou l'expression génique, p.ex. microréseaux, séquençage par hybridation, normalisation, profilage, modèles de correction de bruit, estimation du ratio d'expression, conception ou optimisation de sonde
• C12M 1/00 - Appareillage pour l'enzymologie ou la microbiologie
• C12N 15/09 - Technologie d'ADN recombinant
• C12Q 1/68 - Procédés de mesure ou de test faisant intervenir des enzymes, des acides nucléiques ou des micro-organismesCompositions à cet effetProcédés pour préparer ces compositions faisant intervenir des acides nucléiques
• G01N 33/53 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet
• G01N 37/00 - Détails non couverts par les autres groupes de la présente sous-classe

Abrégé

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and a drill (12) can be obtained by alternately forming and laminating two or more layers A (24) composed of a carboxide, oxynitride or oxycarbonitride of (CraMobWcVdBe)1-x-y-zCxNyOz and two or more layers B (25) composed of WfC(1-f). In this connection, the atomic ratios a-e, x, y, z and (x + y + z) of the layers A (24) are within predetermined ranges; the atomic ratio f of the layers B (25) satisfies 0.3 ≤ f ≤ 0.7; the film thickness (D1) of the layers A (24) is within the range from 2 nm to 500 nm (inclusive); the film thickness (D2) of the layers B (25) is within the range from 1 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

Classes IPC  ?

• B23B 27/14 - Outils de coupe sur lesquels les taillants ou éléments tranchants sont en matériaux particulier
• B23B 51/00 - Outils pour machines à percer

Abrégé

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and an end mill (12) can be obtained by alternately forming and laminating two or more layers A (22) composed of a carboxide, oxynitride or oxycarbonitride of (CraMobWcVdBe)1-x-y-zCxNyOz and two or more layers B (24) composed of W(1-f)Nf. In this connection, the atomic ratios a-e, x, y, z and (x + y + z) of the layers A (22) are within predetermined ranges; the atomic ratio f of the layers B (24) satisfies 0.3 ≤ f ≤ 0.6; the film thickness (D1) of the layers A (22) is within the range from 2 nm to 500 nm (inclusive); the film thickness (D2) of the layers B (24) is within the range from 1 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

Classes IPC  ?

• B23B 27/14 - Outils de coupe sur lesquels les taillants ou éléments tranchants sont en matériaux particulier
• B23C 5/16 - Outils de fraisage caractérisés par des particularités physiques autres que la forme

Abrégé

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and an end mill (12) can be obtained by alternately forming two or more (CraMobWcVdBe)1-x-yCxNy layers A (22) and two or more (CraMobWcVdBe)1-x-y-zCxNyOz layers B (24) by controlling the composition ratios of Cr, Mo, W, V and B and various reaction gases during the film formation, or alternatively by controlling only the various reaction gases during the film formation. In this connection, the atomic ratios a-e, y and (x + y) of the layers A (22) are within predetermined ranges; the atomic ratios a-e, x, y, z and (x + y + z) of the layers B (24) are within predetermined ranges; the film thickness (D1) of the layers A (22) is within the range from 2 nm to 1,000 nm (inclusive); the film thickness (D2) of the layers B (24) is within the range from 2 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

Classes IPC  ?

• B23B 27/14 - Outils de coupe sur lesquels les taillants ou éléments tranchants sont en matériaux particulier
• B23C 5/16 - Outils de fraisage caractérisés par des particularités physiques autres que la forme
• C23C 14/08 - Oxydes

Abrégé

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and a drill (12) can be obtained by alternately forming and laminating two or more layers A (24) composed of a carboxide, oxynitride or oxycarbonitride of (CraMobWcVdBe)1-x-y-zCxNyOz and two or more layers B (25) composed of (Ti1-fSif)1-gNg. In this connection, the atomic ratios a-e, x, y, z and (x + y + z) of the layers A (24) are within predetermined ranges; the atomic ratio f of the layers B (25) satisfies 0 < f ≤ 0.4 and the atomic ratio g of the layers B (25) satisfies 0.4 ≤ g ≤ 0.6; the film thickness (D1) of the layers A (24) is within the range from 2 nm to 500 nm (inclusive); the film thickness (D2) of the layers B (25) is within the range from 1 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

Classes IPC  ?

• B23B 27/14 - Outils de coupe sur lesquels les taillants ou éléments tranchants sont en matériaux particulier
• B23B 51/00 - Outils pour machines à percer

Abrégé

Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and a drill (12) can be obtained by alternately forming and laminating two or more layers A (24) composed of a carboxide, oxynitride or oxycarbonitride of (CraMobWcVdBe)1-x-y-zCxNyOz and two or more layers B (25) composed of Si(1-f)Nf. In this connection, the atomic ratios a-e, x, y, z and (x + y + z) of the layers A (24) are within predetermined ranges; the atomic ratio f of the layers B (25) satisfies 0.3 ≤ f ≤ 0.6; the film thickness (D1) of the layers A (24) is within the range from 2 nm to 500 nm (inclusive); the film thickness (D2) of the layers B (25) is within the range from 1 nm to 20 nm (inclusive); and the total film thickness (D) is within the range from 0.1 μm to 10.0 μm (inclusive).

Classes IPC  ?

• B23B 27/14 - Outils de coupe sur lesquels les taillants ou éléments tranchants sont en matériaux particulier
• B23B 51/00 - Outils pour machines à percer

Abrégé

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Classes IPC  ?

• H01J 37/32 - Tubes à décharge en atmosphère gazeuse
• C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction

Abrégé

A power generating apparatus (100) is provided with a power generating unit (1), an inductor (L), a switch (SW) connected in series to the inductor (L), and a control circuit (3). The power generating unit (1) includes a piezoelectric element (11), and an upper electrode (112) and a lower electrode (113), which are formed on a surface of the piezoelectric element (11). The inductor (L) is electrically connected in parallel to the upper electrode (112) and the lower electrode (113), and constitutes a resonant circuit with a capacitance component of the piezoelectric element (11). The control circuit (3) has drive mode, in which the switch (SW) is brought into the on-state in synchronization with timing when a voltage generated in the piezoelectric element (11) is at an extreme value, and stop mode, in which the switch (SW) is brought into the off-state at the timing when the voltage is at an extreme value. In the cases where frequency of vibration is the natural frequency of the power generating unit, the control circuit (3) inserts a control in the stop mode during a time when control in the drive mode is being performed.

Classes IPC  ?

• H02N 2/18 - Machines électriques en général utilisant l'effet piézo-électrique, l'électrostriction ou la magnétostriction fournissant une sortie électrique à partir d'une entrée mécanique, p. ex. générateurs

Abrégé

[Problem] To provide: a magnetoresistive element which has low saturation magnetization and high perpendicular magnetic anisotropy; and a magnetic memory. [Solution] A magnetoresistive element which is provided with a first magnetic layer, a second magnetic layer and a first non-magnetic layer that is arranged between the first magnetic layer and the second magnetic layer. The first magnetic layer is provided with a magnetic film that contains Mn, Ga and at least one element that is selected from the group consisting of Al, Ge, Ir, Cr, Pt, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb and Dy.

Classes IPC  ?

• H01L 43/08 - Résistances commandées par un champ magnétique
• H01L 21/8246 - Structures de mémoires mortes (ROM)
• H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
• H01L 43/10 - Emploi de matériaux spécifiés

Abrégé

Provided are: a hard film for tools, having high hardness, low friction properties, deposition resistance, and oxidation resistance; and a metal machining tool. The hard film (30) for tools comprises X1-a-bZaOb (X indicates at least one type of metal element selected from Mo, V, and W, and Z indicates at least one type of non-metal element selected from N and C) or (X1-cYc)1-a-bZaOb (X indicates at least one type of metal element selected from Mo, V, and W, X indicates at least one type of metal element selected from Ti and Cr, and Z indicates at least one type of non-metal element selected form N and C.) A hard film for tools that has high hardness, excellent low friction properties, excellent deposition resistance, and excellent oxidation resistance can be obtained by introducing oxygen.

Classes IPC  ?

• C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
• B21H 3/02 - Fabrication de corps hélicoïdaux ou de corps ayant certaines parties de forme hélicoïdale de corps à filetage extérieur
• B23B 27/14 - Outils de coupe sur lesquels les taillants ou éléments tranchants sont en matériaux particulier
• B23C 5/16 - Outils de fraisage caractérisés par des particularités physiques autres que la forme
• C23C 14/08 - Oxydes
• C23C 16/40 - Oxydes

Abrégé

Provided is a hard film for machining tools, having excellent friction resistance, deposition resistance, and smoothness. As a result of this hard film (30) adhered to a rolling tap (10), a TiCrMoWV oxycarbide, oxynitride, or carbo-oxynitride, having a phase having a NaCl-type crystal structure as the main phase thereof, has fine crystals of no more than 100 nm as a result of the introduction of oxygen. As a consequence, the surface of the hard film becomes extremely smooth and a low friction coefficient can be obtained, therefore friction resistance, deposition resistance, and smoothness can be obtained, and tool life can be extended because the hard film has excellent smoothness and a low low-friction coefficient, in addition to friction resistance and deposition resistance.

Classes IPC  ?

• C23C 14/08 - Oxydes

Abrégé

Provided is a dosimeter that, with minimal impact on images taken or displayed using radiation, can measure radiation doses in real-time while said images are being taken or displayed and is environmentally safe. This dosimeter is provided with the following: a radiation detection unit (100) that has a Y2O2S-based phosphor (120) containing at least one activator, namely europium; an optical fiber (200) that transmits light that the phosphor (120) in the radiation detection unit (100) emits upon receiving radiation; and a light-detecting unit (310) that detects the light transmitted by the optical fiber (200).

Classes IPC  ?

• G01T 1/00 - Mesure des rayons X, des rayons gamma, des radiations corpusculaires ou des radiations cosmiques
• C09K 11/00 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes
• C09K 11/84 - Substances luminescentes, p. ex. électroluminescentes, chimiluminescentes contenant des substances inorganiques luminescentes contenant des métaux des terres rares contenant du soufre, p. ex. oxysulfures
• G01T 1/20 - Mesure de l'intensité de radiation avec des détecteurs à scintillation

Abrégé

The present invention addresses the problem of simply and easily providing a highly durable electrical insulation film that makes it possible to manage production with high efficiency while keeping costs down. An electrical insulation film is configured using an anodic oxide film of an aluminum alloy to which 0.01-0.15% of zirconium is added.

Classes IPC  ?

• H01L 21/314 - Couches inorganiques
• H01L 21/283 - Dépôt de matériaux conducteurs ou isolants pour les électrodes
• H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
• H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée

Abrégé

The present invention addresses the problem of simply and easily providing a highly durable electrical insulation film that makes it possible to manage production with high efficiency while keeping costs down. An electrical insulation film is configured using an anodic oxide film of an aluminum alloy having magnesium, zirconium, and cerium added thereto.

Classes IPC  ?

• H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
• C25D 11/04 - Anodisation de l'aluminium ou de ses alliages
• H01L 21/283 - Dépôt de matériaux conducteurs ou isolants pour les électrodes
• H01L 21/314 - Couches inorganiques
• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
• H01L 23/532 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées caractérisées par les matériaux
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/786 - Transistors à couche mince

Abrégé

The present invention provides an evaluation aid which can be used as a phantom (imitation lesion) when a digital X-ray dynamic image thereof is taken and then evaluation is carried out through the digital X-ray dynamic image, and especially an evaluation aid which can be used for evaluating image qualities of a digital X-ray dynamic image for X-ray absorption parts having different X-ray absorption ratios, and an evaluation device provided with such an evaluation aid. The evaluation aid of the present invention is adapted to be used for taking a digital X-ray dynamic image thereof through which evaluation is carried out, and contains a fixed plate (plate-like body) including a plurality of regions having different X-ray absorption ratios; a rotating disk (movable body) having a plurality of wires (wire rods), the rotating disk capable of rotating (moving) with respect to the fixed plate so that the plurality of wires traverse X-ray with which the fixed plate is irradiated; and a driving motor (driving portion) which rotates (moves) the rotating disk with respect to the fixed plate. It is preferred that thicknesses and/or constituent materials of the plurality of regions of the fixed plate are different from each other, so that these regions have the different X-ray absorption ratios.

Classes IPC  ?

• A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations

Abrégé

Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulator layer, and is smaller than a penetration depth of ultraviolet light.

Classes IPC  ?

• H01L 31/062 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface les barrières de potentiel étant uniquement du type métal-isolant-semi-conducteur
• H01L 27/146 - Structures de capteurs d'images
• H01L 31/06 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV] caractérisés par au moins une barrière de potentiel ou une barrière de surface
• H01L 31/18 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives
• G01J 3/28 - Étude du spectre

Abrégé

Provided are a metal nano-micro-protrusion black body that can absorb light in a wide wavelength range and can selectively adjust a light absorbing orientation, and a method for producing the same. Provided is a metal nano-micro-protrusion black body that includes a substrate made of zinc or a substrate having a zinc layer on a surface thereof, and a multiplicity of nano-micro protrusions that are principally made of zinc and grow from and are formed of this substrate, wherein the metal nano-micro-protrusion black body has the following characteristics: the nano-micro protrusion has a shape with a round cross-section such as a conical or cylindrical shape, and has an aspect ratio of 3 or more, the aspect ratio being a ratio of the height of the nano-micro protrusion with respect to the diameter thereof at the bottom of 3 μm or less; and the metal nano-micro-protrusion black body absorbs 95 % or more of ultraviolet light, visible light, or infrared light that is incident at an angle within 30° with respect to the growth direction of the nano-micro protrusions. Also provided is a method for producing the nano-micro-protrusion black body.

Classes IPC  ?

• G02B 5/00 - Éléments optiques autres que les lentilles
• B82Y 20/00 - Nano-optique, p. ex. optique quantique ou cristaux photoniques
• B82Y 30/00 - Nanotechnologie pour matériaux ou science des surfaces, p. ex. nanocomposites
• B82Y 40/00 - Fabrication ou traitement des nanostructures
• C23C 26/00 - Revêtements non prévus par les groupes

Abrégé

One of the problems addressed by the present invention is to provide a method for etching a silicon-based semiconductor article, the method enabling an SiO2 layer to function reliably as an etching stop layer even when fluoronitric acid having a high etching rate is used as an etchant. The problem can be solved by using high-concentration fluoronitric acid as an etchant to etch an Si layer directly superposed on the SiO2 layer, from the free-surface side thereof, replacing the fluoronitric acid with fluoronitric acid which has a lower concentration than that fluoronitric acid, either immediately before at least some of the surface of the SiO2 layer beneath the Si layer is exposed or immediately after the exposure, and further conducting the etching.

Classes IPC  ?

• H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique

Abrégé

One of the problems to be solved by the present invention is the provision of a basic electronic element that, even when the element size is reduced, exhibits intrinsic essential element performance that is commensurate to the element design, and an integrated semiconductor device that is configured by integrating the basic electronic element. The solution provided by the present invention is a MOS-FET having a 3D structure, the MOS-FET being provided with: a channel region that includes a plurality of different crystalline surfaces; a gate electrode that is provided facing the plurality of crystalline surfaces of the channel region; a gate insulating film that is provided between the gate electrode and the channel region; and first and second silicide regions that are provided facing each other in the direction of the flow of the channel region current so as to sandwich the channel region therebetween.

Classes IPC  ?

• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée

Abrégé

An etching method whereby Si substrates having surfaces of exceptional smoothness and planarity can be mass-produced is provided. During an etching process in which the surface of an Si substrate (101) is supplied with a fluonitric acid solution, the temperature of the surface is measured at a plurality of predetermined locations by a thermocamera (1604), and the surface is heated or cooled, depending on the measured values.

Classes IPC  ?

• H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique

Abrégé

Disclosed is a silicon wafer wherein a plurality of terraces are formed on the surface with steps which are formed of a monatomic layer. There is no slip line in the wafer.

Classes IPC  ?

• H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage

Abrégé

Provided is an optical film that has a higher refractive index than titanium oxide films. The optical film comprises an aluminum-titanium composite oxide or a gallium-titanium composite oxide. In the aluminum-titanium composite oxide, the ratio of Al to Ti (Al/Ti) is 17/83 or less in atomic ratio. In the gallium-titanium composite oxide, the ratio of Ga to Ti (Ga/Ti) is 20/80 or less in atomic ratio. The aluminum-titanium composite oxide or the gallium-titanium composite oxide comprises crystals of a rutile structure.

Classes IPC  ?

• G02B 1/02 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques faits de cristaux, p. ex. sel gemme, semi-conducteurs
• C23C 14/08 - Oxydes
• G02B 1/11 - Revêtements antiréfléchissants

Abrégé

Provided is a technique which is advantageous for increasing the operating speed of an integrated circuit. This invention relates to a semiconductor device comprising an n-type transistor formed on the (551) surface of a silicon substrate. The layer thickness of the silicide layer region contacting an n-type transistor diffusion region (high-concentration region) is 5nm or less, and the layer thickness of a metal layer region contacting said silicide layer is 25-400nm, wherein, in said layer thickness relation, the barrier height between the diffusion region and the silicide layer region has a minimum value.

Classes IPC  ?

• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes

Abrégé

n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.

Classes IPC  ?

• G05D 7/06 - Commande de débits caractérisée par l'utilisation de moyens électriques
• G01F 1/36 - Mesure du débit volumétrique ou du débit massique d'un fluide ou d'un matériau solide fluent, dans laquelle le fluide passe à travers un compteur par un écoulement continu en utilisant des effets mécaniques en mesurant la pression ou la différence de pression la pression ou la différence de pression étant produite par une contraction de la veine fluide
• G01F 1/684 - Dispositions de structureMontage des éléments, p. ex. relativement à l'écoulement de fluide
• G01F 5/00 - Mesure d'une fraction du débit volumétrique
• G01F 7/00 - Dispositifs de mesure du débit volumétrique avec plusieurs gammes de mesureCompteurs composés

Abrégé

Provided is a heat dissipation member which can ensure a sufficient area of contact with the open air and thus exhibits excellent heat dissipation characteristics and which can achieve a remarkable weight reduction. This heat dissipation member has a knitted structure of a thin metal wire.

Classes IPC  ?

• H05K 7/20 - Modifications en vue de faciliter la réfrigération, l'aération ou le chauffage
• H01L 23/36 - Emploi de matériaux spécifiés ou mise en forme, en vue de faciliter le refroidissement ou le chauffage, p. ex. dissipateurs de chaleur

Abrégé

A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.

Classes IPC  ?

• H01L 21/425 - Bombardement par des radiations par des radiations d'énergie élevée produisant une implantation d'ions
• H01L 21/42 - Bombardement par des radiations

Abrégé

Provided are: an assessment aid which can be used as a phantom (pseudo-lesion) in the imaging and assessment of digital X-ray video images, and in particular whereby digital X-ray video images in a plurality of X-ray absorption regions having different X-ray absorptivities can be assessed; and an assessment device provided with the assessment aid. This assessment aid is used in the imaging and assessment of digital X-ray video images, and comprises: a fixed plate (plate-shaped body) having a plurality of regions of different X-ray absorptivities; a turntable (displacement body) having a plurality of wires (line members) rotatably (displaceably) provided to the fixed plate so as to transect X-rays with which the fixed plate is irradiated; and a drive motor (drive unit) for rotating (displacing) the turntable with respect to the fixed plate. Preferably, the fixed plate has different thicknesses and/or constituent materials in the plurality of regions and thereby has different X-ray absorptivities in each of the regions.

Classes IPC  ?

• A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations

Abrégé

The objective of the present invention is to provide a reaction tank that can markedly increase production efficiency as reaction products do not substantially adhere to the inner wall surface thereof even with continuous use. Furthermore, the objective of the present invention is to provide a method that is for producing a structure of a production process treatment tank and a production process treatment tank using the structure and that, by means of the method for producing, can easily provide the structure of a production process treatment tank and the production process treatment tank using the structure such that reaction products do not substantially adhere to the inner wall surface thereof even with continuous use. The reaction tank is provided with a film comprising PFA at the inner wall surface of a main tank body. Also, the method for producing the reaction tank and the structure thereof provides a PFA layer to the inner wall surface by means of melting/remelting.

Classes IPC  ?

• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
• B08B 17/02 - Procédés pour empêcher la salissure pour empêcher le dépôt de crasses ou de poussières
• C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
• C23C 26/00 - Revêtements non prévus par les groupes
• C25D 11/18 - Post-traitement, p. ex. bouchage des pores
• H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches

Abrégé

[Problem] To reduce the size of a solid oxide fuel cell, while improving the power generation efficiency per unit volume. [Solution] A SOFC (1) comprises an element main body (10), a first external electrode (11), and a second external electrode (12). The element main body (10) is obtained by alternately laminating a plurality of internal electrode layers (2) for the anode and a plurality of internal electrode layers (3) for the cathode, and a solid electrolyte layer (4) is arranged between one internal electrode layer (2) and one internal electrode layer (3). In addition, the element main body (10) is provided with partition parts (5), each of which connects two adjacent solid electrolyte layers (4) with each other, at non-overlapping portions (6) where the internal electrode layers (2) for the anode and the internal electrode layers (3) for the cathode do not overlap each other. The plurality of internal electrode layers (2) for the anode, the plurality of internal electrode layers (3) for the cathode, the solid electrolyte layers (4) and the partition parts (5) are integrally configured. The plurality of internal electrode layers (2) for the anode and/or the plurality of internal electrode layers (3) for the cathode penetrate the element main body (10) from a predetermined position of the surface of the element main body (10) to a position that is different from the predetermined position.

Classes IPC  ?

• H01M 8/02 - Éléments à combustibleLeur fabrication Détails
• H01M 8/12 - Éléments à combustible avec électrolytes solides fonctionnant à haute température, p. ex. avec un électrolyte en ZrO2 stabilisé
• H01M 8/24 - Groupement d'éléments à combustible, p. ex. empilement d'éléments à combustible

Abrégé

[Problem] The purpose of the invention is to provide a reaction vessel which uses an aluminum alloy vessel main body which has high thermal conductivity and in which excellent heat removal efficiency is expected, and which is capable of reducing generation of polymeric scales and microscopic condensates. [Solution] The aluminum alloy reaction vessel according to the present invention is characterized in that the inner surface of the aluminum alloy vessel main body is formed with an anodic oxide coating and an antistaining coating in this order.

Classes IPC  ?

• C08F 2/00 - Procédés de polymérisation

Abrégé

This microimaging probe is substantially more compact than conventional microimaging probes. A GRIN lens is fixed on the front end side of an image fiber such that the front end surface of the image fiber and the back end surface of the GRIN lens face one another at a prescribed interval. By allowing the front end surface of the image fiber and the back end surface of the GRIN lens to face one another at a prescribed interval, an enlarged image is formed on the front end surface of an image fiber of a different diameter, and images can be efficiently transmitted.

Classes IPC  ?

• A61B 1/00 - Instruments pour procéder à l'examen médical de l'intérieur des cavités ou des conduits du corps par inspection visuelle ou photographique, p. ex. endoscopesDispositions pour l'éclairage dans ces instruments

Abrégé

Provided is a contactless power transmission system that is of an electromagnetic induction type and that ameliorates a worsening of transmission efficiency. The contactless power transmission system that is of an electromagnetic induction type and that contactlessly transmits power from a power supply device having a primary-side power supply coil and a power reception device having a secondary-side power reception coil is equipped with a matching coil that performs load matching for efficiently transmitting the magnetic flux generated at the primary-side power supply coil to the secondary-side power reception coil.

Classes IPC  ?

• H02J 17/00 - Systèmes pour l'alimentation ou la distribution d'énergie par ondes électromagnétiques

Abrégé

This semiconductor device comprises: a gate electrode provided on a substrate and containing Al and Zr; a gate insulating film provided so as to cover at least the upper surface of the gate electrode and containing Al and Zr, and an insulator layer provided on the substrate so as to surround the gate electrode.

Classes IPC  ?

• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 29/786 - Transistors à couche mince

Abrégé

Provided is a method that is for producing a semiconductor device and that is provided with: a first sacrificial layer forming step for forming a first sacrificial layer that contacts at least a portion of a first semiconductor layer and that has a higher solid solubility of impurities contained in the first semiconductor layer than that of the first semiconductor layer; an annealing step for annealing the first sacrificial layer and the first semiconductor layer; an elimination step for eliminating the first sacrificial layer via a wet process; a step for forming an insulating layer that covers at least a portion of the first semiconductor layer and/or a step for etching a portion of the first semiconductor layer; and an electrode-forming step for forming an electrode layer that is electrically connected to the first semiconductor layer.

Classes IPC  ?

• H01L 21/338 - Transistors à effet de champ à grille Schottky
• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
• H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
• H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
• H01L 21/308 - Traitement chimique ou électrique, p. ex. gravure électrolytique en utilisant des masques
• H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky

Abrégé

Provided is a method that is for producing a semiconductor device, produces a gallium nitride-based semiconductor device, and is provided with: a first semiconductor layer forming step that forms a first semiconductor layer comprising a gallium nitride-based semiconductor; and a recess-forming step that, using a bromine-based gas, dry etches a portion of the first semiconductor layer via a microwave plasma process, forming a recess.

Classes IPC  ?

• H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
• H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
• H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
• H01L 21/338 - Transistors à effet de champ à grille Schottky
• H01L 29/778 - Transistors à effet de champ avec un canal à gaz de porteurs de charge à deux dimensions, p.ex. transistors à effet de champ à haute mobilité électronique HEMT
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/786 - Transistors à couche mince
• H01L 29/812 - Transistors à effet de champ l'effet de champ étant produit par une jonction PN ou une autre jonction redresseuse à grille Schottky

Abrégé

This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor.

Classes IPC  ?

• H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
• H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
• H01L 21/8234 - Technologie MIS
• H01L 21/84 - Fabrication ou traitement de dispositifs consistant en une pluralité de composants à l'état solide ou de circuits intégrés formés dans ou sur un substrat commun avec une division ultérieure du substrat en plusieurs dispositifs individuels pour produire des dispositifs, p.ex. des circuits intégrés, consistant chacun en une pluralité de composants le substrat étant autre chose qu'un corps semi-conducteur, p.ex. étant un corps isolant
• H01L 27/12 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant autre qu'un corps semi-conducteur, p.ex. un corps isolant

Abrégé

An electrode device for an electrochemical sensor chip includes an insulation sheet having an insulating property and including a top surface and a bottom surface opposite to each other in a thickness direction, and electrode members having a conductivity and held by the insulation sheet with the electrode members piercing the insulation sheet in a thickness direction, one ends of the electrode members located on the top surface side of the insulation sheet being connected to an analyte, the other ends located on the bottom surface side of the insulation sheet being connected to an electrodes of a transducer.

Classes IPC  ?

• G01N 27/416 - Systèmes
• G01N 27/30 - Électrodes, p. ex. électrodes pour testsDemi-cellules
• G01N 33/487 - Analyse physique de matériau biologique de matériau biologique liquide

Abrégé

An electrode device for an electrochemical sensor chip includes an insulation sheet having an insulating property and including a top surface and a bottom surface opposite to each other in a thickness direction, and electrode members having a conductivity and held by the insulation sheet in portions piercing the insulation sheet in a thickness direction, one ends of the electrode members located on the top surface side of the insulation sheet being connected to the analyte, other ends located on the bottom surface side of the insulation sheet being connected to the electrodes of the transducer, recesses for trapping the analyte being formed in the top surface of the insulation sheet so as to correspond to the electrode members, the one ends of the electrode members being exposed at a bottom of the recesses.

Classes IPC  ?

• G01N 27/416 - Systèmes

Abrégé

An electrode device for an electrochemical sensor chip includes an insulation sheet having an insulating property and including a top surface and a bottom surface opposite to each other in a thickness direction, and electrode members having a conductivity and held by the insulation sheet with the electrode members piercing the insulation sheet in a thickness direction, one ends of the electrode members located on the top surface side of the insulation sheet being connected to an analyte, the other ends located on the bottom surface side of the insulation sheet being connected to an electrodes of a transducer, at least the one ends of the electrode members being made of a mixture of conductive particles and an insulating material.

Classes IPC  ?

• G01N 27/416 - Systèmes
• G01N 27/30 - Électrodes, p. ex. électrodes pour testsDemi-cellules
• G01N 33/487 - Analyse physique de matériau biologique de matériau biologique liquide

Abrégé

A measurement method that includes irradiating a void-arranged structure on which an analyte has been held with an electromagnetic wave, detecting an electromagnetic wave scattered on the void-arranged structure, and determining a property of the analyte on the basis of at least one parameter, the parameter including the amount of change in the ratio of the detected electromagnetic wave to the irradiated electromagnetic wave at a specific frequency between the presence and the absence of the analyte.

Classes IPC  ?

• G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
• G01N 21/3581 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant la lumière de l'infrarouge lointainCouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge en utilisant un rayonnement térahertz

Abrégé

Provided is an advantageous technology for evenly etching a substrate. The etching device is configured so as to etch the substrate having a first side and a second side on the first side with an etching fluid comprising hydrogen fluoride and nitric acid, and comprises: a chuck that holds the second side of the substrate; a rotation mechanism that rotates the substrate by rotating the chuck; a first supplying portion that supplies the etching fluid comprising hydrogen fluoride and nitric acid to a central portion of the first side of the substrate being rotated by the rotation mechanism; and a second supplying portion that supplies a replenisher to an outer portion that is further out from the central portion of the first side of the substrate being rotated by the rotation mechanism. The replenisher comprises one, and excludes an other, of hydrogen fluoride and nitric acid.

Classes IPC  ?

• H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
• H01L 21/304 - Traitement mécanique, p. ex. meulage, polissage, coupe

Abrégé

In this multilayer wiring board (100) having a high-density wiring region and a high-frequency transmission region mounted to the same substrate, the high-frequency transmission region is caused to be able to transmit a signal frequency of at least 40 GHz by means of using a resin material having a dielectric dissipation factor (tanδ) that is less than 0.01 as the material of an insulating layer used in at least the high-frequency transmission region. The insulating layer is formed from a polymerizable composition that contains a cycloolefin monomer, a polymerization catalyst, a cross-linking agent, a bifunctional compound having two vinylidene groups, and a trifunctional compound having three vinylidene groups, the ratio of the contained bifunctional compound and trifunctional compound as a weight ratio value (bifunctional compound/ trifunctional compound) being 0.5-.1.5.

Classes IPC  ?

• H05K 3/46 - Fabrication de circuits multi-couches
• H01L 23/12 - Supports, p. ex. substrats isolants non amovibles
• H05K 1/02 - Circuits imprimés Détails

Abrégé

The problem addressed by the present invention is providing a method for manufacturing a semiconductor device that can make use of the advantages of a low permittivity CFx film and that can prevent deterioration of characteristics because of CMP treatment in a semiconductor device with a multilayer wiring structure having a CFx film for an interlayer insulating film. This method for manufacturing a semiconductor device comprises: a step (a) for forming a CFx film; a step (b) for forming a recessed part of a prescribed pattern on the CFx film; a step (c) for providing a wiring layer embedded in the recessed part and going across the top of the CFx film; a step (d) for eliminating excess wiring layer on the CF x film other than within the recessed part and exposing the surface of the CFx film. Before or after the step (b), a step (e) for nitriding the surface of the CFx film is provided.

Classes IPC  ?

• H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
• C23C 16/32 - Carbures
• H01L 21/314 - Couches inorganiques
• H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
• H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées

Abrégé

Provided is a cathode body that has: a cylindrical cup (30) as a base body; a barrier layer (303), which is provided on the surface of the cylindrical cup (30), and contains SiC; and a film, which is formed on the surface of the barrier layer (303), and contains a boride of a rare-earth element. The cathode body eliminates interdiffusion of the component elements of the base body and the boride.

Classes IPC  ?

• H01J 61/06 - Électrodes principales
• H01J 9/02 - Fabrication des électrodes ou des systèmes d'électrodes

Abrégé

The present invention addresses a problem of providing a method of manufacturing a TSV structure that prevents a substrate from warping even when made thin. This method of manufacturing a semiconductor device comprises integrating semiconductor elements on the obverse of a semiconductor substrate to form at least a part of a circuit, opening holes through the obverse of the semiconductor substrate, forming insulating films and barrier films on inner surfaces of the holes, forming a conductive metal on surfaces of the barrier films so as to fill the holes, processing the reverse of the semiconductor substrate to reduce thickness, causing the conductive metal to protrude, and providing an SiCN film on the reverse of the semiconductor substrate.

Classes IPC  ?

• H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
• H01L 23/52 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre
• H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
• H01L 25/07 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans la sous-classe
• H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou

Abrégé

The purpose of the present invention is to provide a photoelectric conversion member comprising a heat-dissipating mechanism having heat dissipation characteristics superior to those of the prior art. This photoelectric conversion member (1) comprises a first electrode layer (20), an electricity-generating stack (22), and a second electrode layer (26) formed on the electricity-generating stack (22) via a nickel layer (24). A passivation layer (28) composed of a SiCN-containing material is formed on the second electrode layer (26). A heat-dissipating structure (31) is provided on the passivation layer (28). The heat-dissipating structure (31) contains 40-750 parts by weight of an expanded graphite powder (E) per 100 parts by weight of at least one type of polymer (S).

Classes IPC  ?

• H01L 31/04 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV]

Abrégé

The present invention provides an evaluation aid capable of using a digital X-ray image as a phantom (mimic lesion) when the image is captured and evaluated and particularly, evaluating digital X-ray images in a plurality of X-ray absorption regions having different X-ray absorption rates in a collective manner. This evaluation aid is used when a digital X-ray image is captured and evaluated and includes a substrate (plate-like body) having a plurality of regions with different X-ray absorption rates, and steps having the plurality of regions with the different X-ray absorption rates and provided correspondingly to the regions on the substrate. The substrate is preferably different in the X-ray absorption rates in the regions because the thicknesses and/or constituent materials in the plurality of regions are different.

Classes IPC  ?

• A61B 6/00 - Appareils ou dispositifs pour le diagnostic par radiationsAppareils ou dispositifs pour le diagnostic par radiations combinés avec un équipement de thérapie par radiations

Abrégé

A method of attaching an object to be measured to a structure causing a diffraction phenomenon; irradiating the structure to which the object to be measured is attached and which causes the diffraction phenomenon with an electromagnetic wave; detecting the electromagnetic wave scattered by the structure causing the diffraction phenomenon; and measuring a characteristic of the object to be measured from the frequency characteristic of the detected electromagnetic wave. The object to be measured is attached directly to the surface of the structure causing the diffraction phenomenon. Thus, the method for measuring the characteristic of an object to be measured exhibits an improved measurement sensitivity and high reproducibility. A structure causing a diffraction phenomenon and used for the method, and a measuring device are provided.

Classes IPC  ?

• G01J 3/28 - Étude du spectre

Abrégé

A three-dimensional data generating apparatus comprises: a model creating unit (1) that uses three-dimensional face data of a plurality of persons as learning data to generates a plurality of three-dimensional shapes of a face of a person projected onto a projection space by varying the viewpoint thereto, obtains the three-dimensional coordinates of each of a plurality of points on the three-dimensional shapes, conducts a principal component analysis for the three-dimensional coordinates and drawing brightness of the face to obtain the average vector and base vector, and creates a model of the face of the person wherein the three-dimensional coordinates and drawing brightness is expressed as a linear sum of the average vector and base vector, and model parameters; a fitting learning unit (2) that conducts fitting by deforming the model so as to match the face of the person within an input image, and generates three-dimensional data of the face of the person within the input image; and a fitting execution unit (3).

Classes IPC  ?

• G06T 7/60 - Analyse des attributs géométriques
• G06T 15/00 - Rendu d'images tridimensionnelles [3D]

Abrégé

Provided is a screw vacuum pump wherein reduction of the dimension in the longitudinal direction of a rotary shaft is achieved, and the flexibility of design of pump components is ensured. A screw pump (100) is provided with a male rotor (110), a female rotor (120), a stator (130), and a drive motor (140). A screw gear portion (111) of the male rotor (110), a screw gear portion (121) of the female rotor (120), and the stator (130) define a gas operation chamber in cooperation with one another. The stator (130) has an air intake port (134) and an air discharge port (135). At least either of the male rotor (110) and the female rotor (120) has rotor hollow portions (112, 122) which are open in at least one end face of each rotor in the longitudinal direction of the male rotor (110) and/or the female rotor (120). At least a part of the drive motor (140) is stored within the rotor hollow portions (112, 122).

Classes IPC  ?

• F04C 18/16 - Pompes à piston rotatif spécialement adaptées pour les fluides compressibles du type à engrènement extérieur, c.-à-d. avec un engagement des organes coopérants semblable à celui d'engrenages dentés d'un autre type qu'à axe interne avec des pistons rotatifs dentés à dents hélicoïdales, p. ex. du type ayant la forme d'un chevron, du type à vis
• F04C 25/02 - Adaptations de pompes pour utilisation spéciale pour les fluides compressibles pour produire un vide élevé

Abrégé

Disclosed is a method for manufacturing a semiconductor device comprising an element isolation region, which comprises: a step wherein a semiconductor substrate is provided with a shallow trench for forming the element isolation region; a step wherein a coating liquid is applied over the semiconductor substrate including the sallow trench; and a step wherein the thus-coated coating film is modified into an insulating material for element isolation. The coating liquid contains one or more compositions represented by the following general formula: ((CH3)nSiO2-n/2)x(SiO2)1-x (wherein n = 1-3 and 0 ≤ x ≤ 1.0), and a solvent. The above-described modification step has a step wherein the coating film is subjected to a heat treatment in an oxidizing atmosphere at a reduced pressure of 10-200 Torr, thereby being modified into an SiO2 film. In the modification step, the coating film is modified into an SiO2 film that is free from granulation and/or formation of voids.

Classes IPC  ?

• H01L 21/76 - Réalisation de régions isolantes entre les composants
• H01L 27/08 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant uniquement des composants semi-conducteurs d'un seul type

Abrégé

Provided is metalworking equipment that does not require waste oil disposal or product cleaning work, prevents oxidation of a metal workpiece, and avoids producing vibrations in the area being machined even if a large quantity of a liquid coolant is supplied to the part being machined. This enables metalworking to be achieved at high speed and with high precision. The metalworking equipment (100) is equipped with a tool (121) that machines a metal workpiece (W), and a liquid coolant supply means (130), which supplies a liquid coolant (L) to the part being machined (A), which is positioned between the tool (121) and the metal workpiece (W). The liquid coolant (L) is formed by performing a degassing process that removes dissolved gases, and a hydrogenation process that adds hydrogen, with respect to water.

Classes IPC  ?

• B23Q 11/10 - Dispositions pour le refroidissement ou la lubrification des outils ou des pièces travaillées
• C10M 101/02 - Fractions de pétrole
• C10M 101/04 - Fractions d'huiles grasses
• C10M 173/00 - Compositions lubrifiantes contenant plus de 10% d'eau
• C10N 30/00 - Propriétés physiques ou chimiques particulières améliorées par l'additif caractérisant la composition lubrifiante, p. ex. additifs multifonctionnels
• C10N 30/10 - Inhibition de l'oxydation, p. ex. anti-oxydants
• C10N 40/22 - Travail des métaux avec enlèvement substantiel de matière

Abrégé

A phenomenon was observed in which an LaB6 film deposited by sputtering had impaired crystallinity. When an LaB6 film is deposited on a substrate by sputtering, the sputtering is conducted, in an atmosphere to which nitrogen gas has been added, directly on the substrate or through a film comprising a nitride of a component of the substrate. Thus, an LaB6 film having excellent crystallinity is obtained.

Classes IPC  ?

• H01J 9/02 - Fabrication des électrodes ou des systèmes d'électrodes
• C23C 14/06 - Revêtement par évaporation sous vide, pulvérisation cathodique ou implantation d'ions du matériau composant le revêtement caractérisé par le matériau de revêtement
• H01J 61/06 - Électrodes principales
• H01J 61/067 - Électrodes principales pour lampes à décharge à basse pression

Abrégé

Disclosed is a novel bisphosphate compound that can be used with a wide range of reaction substrates and reactions as a catalyst for asymmetric reactions and can achieve an asymmetric reaction with a high yield and high asymmetric yield. The bisphosphate compound has a tetraaryl skeleton given by general formula (1). An optically active amide aldehyde is obtained in the asymmetric reaction by reacting an amide diene and an unsaturated aldehyde compound in the presence of this optically active bisphosphate compound. Asymmetric Diels-Alder and other reactions that were difficult with conventional monophosphate compounds can be made to progress efficiently; therefore, optically active amide aldehydes, optically active β-amino derivatives, optically active diamine compounds, optically active pyrrolidine derivatives and optically active dihydropyran derivatives useful as medicines, agricultural chemicals and chemical products as well as intermediates for the same can be produced by a method that can be implemented industrially.

Classes IPC  ?

• C07F 9/6574 - Esters des oxyacides du phosphore
• C07C 269/06 - Préparation de dérivés d'acide carbamique, c.-à-d. de composés contenant l'un des groupes l'atome d'azote ne faisant pas partie de groupes nitro ou nitroso par des réactions n'impliquant pas la formation de groupes carbamate
• C07C 271/18 - Esters des acides carbamiques ayant des atomes d'oxygène de groupes carbamate liés à des atomes de carbone acycliques avec les atomes d'azote des groupes carbamate liés à des atomes d'hydrogène ou à des atomes de carbone acycliques à des atomes de carbone de radicaux hydrocarbonés substitués par des atomes d'oxygène liés par des liaisons doubles
• C07C 271/24 - Esters des acides carbamiques ayant des atomes d'oxygène de groupes carbamate liés à des atomes de carbone acycliques avec l'atome d'azote d'au moins un des groupes carbamate lié à un atome de carbone d'un cycle autre qu'un cycle aromatique à six chaînons
• C07D 307/54 - Radicaux substitués par des atomes de carbone comportant trois liaisons à des hétéro-atomes, avec au plus une liaison à un halogène, p. ex. radicaux ester ou nitrile
• C07B 53/00 - Synthèses asymétriques
• C07B 61/00 - Autres procédés généraux

Abrégé

A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.

Classes IPC  ?

• H01L 21/52 - Montage des corps semi-conducteurs dans les conteneurs

Abrégé

Disclosed is a silicon wafer wherein a plurality of terraces are formed on the surface with steps which are formed of a monatomic layer. There is no slip line in the wafer.

Classes IPC  ?

• H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
• C30B 29/06 - Silicium
• C30B 33/02 - Traitement thermique
• H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée

Abrégé

Disclosed is a machine tool for machining screw rotors, capable of machining a large number of high-precision screw rotors having variable lead and tilt angles at low cost in a short time without requiring enormous machining workload and thereby capable of supplying a large number of screw-type vacuum pump at low cost. Also disclosed is a method of machining screw rotors using the same. Specifically, a machine tool (200) for machining screw rotors comprises a spindle (211); a headstock (210); a tool stock (220); a tool (221); a C-axis serving as the rotational axis of the spindle (211); X-, Z-, and Y-axes serving as moving directions of the tool stock (220); an A-axis for adjusting the rake angle of the tool (221) with respect to a workpiece (W) to be machined by rotating the tool (221) in accordance with the lead angle of a screw rotor (120); and a numerical control means (230). Also disclosed is a method of machining screw rotors using the same.

Classes IPC  ?

• B23F 15/08 - Fabrication de rotors s'engrènant, p. ex. de pompes
• B23F 23/12 - Autres dispositifs, p. ex. porte-outilsDispositifs de vérification pour le contrôle des pièces à usiner dans les machines de fabrication de dents d'engrenage
• F04C 25/02 - Adaptations de pompes pour utilisation spéciale pour les fluides compressibles pour produire un vide élevé

Abrégé

Disclosed is ferritic stainless steel which can be used around 475°C for a long period of time. Specifically disclosed is ferritic stainless steel for high temperature use, which contains 12.0-20.0% by atom of Cr and 5.0-20.0% by atom of Al, with the balance made up of an Fe component. The Cr and Al contents are within the region bounded by point A (Cr: 12% by atom, Al: 5% by atom), point B (Cr: 15% by atom, Al: 10.5% by atom), point C (Cr: 17% by atom, Al: 12% by atom), point D (Cr: 20% by atom, Al: 13% by atom), point F (Cr: 20% by atom, Al: 20% by atom) and point G (Cr: 12% by atom, Al: 20% by atom) as shown in fig. 8.

Classes IPC  ?

• C22C 38/00 - Alliages ferreux, p. ex. aciers alliés
• C22C 38/18 - Alliages ferreux, p. ex. aciers alliés contenant du chrome
• C22C 38/28 - Alliages ferreux, p. ex. aciers alliés contenant du chrome et du titane ou du zirconium

Abrégé

Provided is an Al alloy member with an excellent mechanical strength that is sufficient for use in large-scale manufacturing apparatuses. The Al alloy member is characterized in that, in mass %, Mg concentration is 5.0% or less, Ce concentration is 15% or less, Zr concentration is 0.15% or less, the balance comprises Al and unavoidable impurities, the elements of the unavoidable impurities are respectively 0.01% or less, and the Vickers hardness of the Al alloy member is greater than 30.

Classes IPC  ?

• B32B 1/02 - Réceptacles, p.ex. réservoirs
• C25D 11/04 - Anodisation de l'aluminium ou de ses alliages
• C25D 11/06 - Anodisation de l'aluminium ou de ses alliages caractérisée par les électrolytes utilisés
• C22C 21/00 - Alliages à base d'aluminium

Abrégé

Disclosed is a surface protective film which is capable of suppressing the entrance of a corrosive gas more than conventional surface protective films. Specifically disclosed is a surface protective film which contains yttria (Y2O3) as a main component and also contains cerium. Since the surface protective film contains cerium, defects such as micropores in the film are reduced, thereby enabling suppression of the entrance of a corrosive gas.

Classes IPC  ?

• C01F 17/00 - Composés des métaux des terres rares
• F04B 39/12 - Carcasses d'enveloppeCylindresCulassesConnexions des tubulures pour fluide
• F04C 25/02 - Adaptations de pompes pour utilisation spéciale pour les fluides compressibles pour produire un vide élevé
• F04C 29/12 - Dispositions pour l'admission ou l'échappement du fluide de travail, p. ex. caractéristiques de structure de l'admission ou de l'échappement
• H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
• H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs

Abrégé

2/g.

Classes IPC  ?

• F16K 31/02 - Moyens de fonctionnementDispositifs de retour à la position de repos électriquesMoyens de fonctionnementDispositifs de retour à la position de repos magnétiques

Abrégé

Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film.

Classes IPC  ?

• H05K 1/09 - Emploi de matériaux pour réaliser le parcours métallique
• H05K 1/02 - Circuits imprimés Détails
• H05K 3/00 - Appareils ou procédés pour la fabrication de circuits imprimés
• H05K 3/38 - Amélioration de l'adhérence entre le substrat isolant et le métal
• H05K 3/42 - Trous de passage métallisés
• H05K 3/46 - Fabrication de circuits multi-couches

Abrégé

b is twice or more a width W1 of the wiring in the first wiring region 101. The first wiring region 101 and the second wiring region 102 are integrally formed on the same board.

Classes IPC  ?

• H05K 1/03 - Emploi de matériaux pour réaliser le substrat
• H05K 1/11 - Éléments imprimés pour réaliser des connexions électriques avec ou entre des circuits imprimés

Abrégé

A measurement method comprising holding an analyte on a void-arranged structure (1), irradiating the void-arranged structure (1) on which the analyte has been held with an electromagnetic wave, detecting an electromagnetic wave scattered on the void-arranged structure (1), and determining a property of the analyte on the basis of at least one parameter, wherein the method is characterized in that the parameter includes the amount of change in the ratio of the detected electromagnetic wave to the irradiated electromagnetic wave at a specific frequency between the presence and the absence of the analyte.

Classes IPC  ?

• G01N 21/35 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
• G01N 21/01 - Dispositions ou appareils pour faciliter la recherche optique

Abrégé

Disclosed is a photoelectric conversion device which comprises a passivation layer that is suitable for a structure provided with a heat dissipation mechanism. Specifically disclosed is a photoelectric conversion device (1) which comprises a first electrode layer (20), a single power-generating laminate (22) that is provided with an nip structure formed of amorphous silicon (a-Si), and a second electrode layer (26) that is composed of Al and formed on the power-generating laminate (22) with a nickel layer (24) interposed therebetween. A passivation layer (28), which is configured of a material containing SiCN, is formed on the second electrode layer (26). A heat sink (30) (that is formed, for example, of Al) is mounted on the passivation layer (28) with an adhesive layer (29) interposed therebetween.

Classes IPC  ?

• H01L 31/04 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV]

Abrégé

Disclosed is a semiconductor device which is characterized by comprising: a gate electrode that is provided on a substrate and contains Al or an Al alloy; a gate insulating film that is so formed as to cover at least the upper surface of the gate electrode and contains an anodic oxide film that is obtained by anodizing the Al or Al alloy of the gate electrode; and an insulator layer that is so formed on the substrate as to surround the gate electrode and has a thickness that is substantially equal to the total of the thickness of the gate electrode and the thickness of the gate insulating film formed on the upper surface of the gate electrode.

Classes IPC  ?

• H01L 21/336 - Transistors à effet de champ à grille isolée
• G02F 1/1368 - Cellules à adressage par une matrice active dans lesquelles l'élément de commutation est un dispositif à trois électrodes
• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
• H01L 21/283 - Dépôt de matériaux conducteurs ou isolants pour les électrodes
• H01L 21/312 - Couches organiques, p. ex. couche photosensible
• H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
• H01L 29/423 - Electrodes caractérisées par leur forme, leurs dimensions relatives ou leur disposition relative ne transportant pas le courant à redresser, à amplifier ou à commuter
• H01L 29/49 - Electrodes du type métal-isolant-semi-conducteur
• H01L 29/786 - Transistors à couche mince

Abrégé

A film deposition method is disclosed in which a thin film comprising manganese is formed on an object to be treated (W) which has, formed on a surface thereof, an insulating layer (122) constituted of a low-k film and having a recess (2). The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which the surface of the hydrophilized insulating layer is subjected to a film deposition treatment with a manganese-containing material to form a thin film comprising manganese thereon. Thus, a thin film comprising manganese, e.g., an MnOx film, is efficiently formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

Classes IPC  ?

• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
• C23C 16/02 - Pré-traitement du matériau à revêtir
• C23C 16/20 - Dépôt uniquement d'aluminium
• H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p. ex. condensation
• H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
• H01L 23/52 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre

Abrégé

Provided is an electron device wherein, as it is revealed that, among transparent conductive layers, a zinc oxide layer has a function to prevent natrium from spreading, the zinc oxide layer is used as an electrode of the electron device, and is also used as a spread prevention layer for preventing natrium from spreading from a glass substrate.

Classes IPC  ?

• H01L 31/04 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV]
• H01J 29/86 - EnceintesRécipientsFermetures étanches

Abrégé

First, a mixed salt is heated to produce a melt (S101). Next, a mold for core molding is heated to within a temperature range of 0.52 x Tm to 0.7 x Tm (S102). It should be noted that Tm is the liquidus temperature of the mixed salt expressed as an absolute temperature (K). Then the above-mentioned melt is poured under pressure into the mold heated as described above (S103). The melt is hardened inside the mold to form the salt core for casting (S104).

Classes IPC  ?

• B22C 9/10 - NoyauxFabrication ou mise en place des noyaux
• B22C 13/12 - Machines à mouler pour faire des moules ou noyaux de forme particulière pour noyaux
• B22D 17/00 - Coulée sous pression ou moulage par injection, c.-à-d. moulage en introduisant le métal dans le moule sous haute pression

Abrégé

Disclosed is an electrodialyzer the power of which is effectively saved. The electrodialyzer electrically dialyzes water to be processed while a voltage substantially not causing current to flow is applied between the anode and the cathode.

Classes IPC  ?

• C02F 1/469 - Traitement de l'eau, des eaux résiduaires ou des eaux d'égout par des procédés électrochimiques par séparation électrochimique, p. ex. par électro-osmose, électrodialyse, électrophorèse
• B01D 61/46 - Appareils à cet effet

Abrégé

Provided is a magnetoresistive element of a spin injection write type that is thermally stable and at the same time is capable of inverting a magnetization at a low current, and also provided is a magnetic memory using the magnetoresistive element. The magnetoresistive element comprises: a base layer (12); a first magnetic layer (13) provided on the base layer, having an easy axis of magnetization in a vertical direction to the film surface, and being variable in magnetization direction; a first non-magnetic layer (15) provided on the first magnetic layer; and a second magnetic layer (17) provided on the first non-magnetic layer, having an easy axis of magnetization in a vertical direction to the film surface, and fixed in magnetization direction. The first magnetic layer has a DO22 structure or an L10 structure and includes a ferrimagnetic layer, the c-axis of which is oriented toward a vertical direction to the film surface. The magnetization direction of the first magnetic layer is variable according to the current flowing through the first magnetic layer, the first non-magnetic layer, and the second magnetic layer.

Classes IPC  ?

• H01L 43/08 - Résistances commandées par un champ magnétique
• H01F 10/12 - Métaux ou alliages
• H01F 10/28 - Pellicules magnétiques minces, p. ex. de structure à un domaine caractérisées par le substrat ou par les couches intermédiaires caractérisées par la composition du substrat
• H01L 21/8246 - Structures de mémoires mortes (ROM)
• H01L 27/105 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface le substrat étant un corps semi-conducteur comprenant une pluralité de composants individuels dans une configuration répétitive comprenant des composants à effet de champ
• H01L 43/10 - Emploi de matériaux spécifiés

Abrégé

A method for attaching an object to be measured to a structure (1) causing a diffraction phenomenon, irradiating the structure (1) to which the object to be measured is attached and which causes the diffraction phenomenon with an electromagnetic wave, detecting the electromagnetic wave scattered by the structure (1) causing the diffraction phenomenon, and measuring a characteristic of the object to be measured from the frequency characteristic of the detected electromagnetic wave. The method is characterized in that the object to be measured is attached directly to the surface of the structure (1) causing the diffraction phenomenon. Thus, the method for measuring the characteristic of an object to be measured exhibiting an improved measurement sensitivity and a high reproducibility, a structure (1) causing a diffraction phenomenon and used for the method, and a measuring device are provided.

Classes IPC  ?

• G01N 21/01 - Dispositions ou appareils pour faciliter la recherche optique
• G01N 21/35 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes en recherchant l'effet relatif du matériau pour les longueurs d'ondes caractéristiques d'éléments ou de molécules spécifiques, p. ex. spectrométrie d'absorption atomique en utilisant la lumière infrarouge
• G01N 21/47 - Dispersion, c.-à-d. réflexion diffuse
• G01N 33/566 - Tests immunologiquesTests faisant intervenir la formation de liaisons biospécifiquesMatériaux à cet effet utilisant un support spécifique ou des protéines réceptrices comme réactifs pour la formation de liaisons par ligand
• G01N 35/02 - Analyse automatique non limitée à des procédés ou à des matériaux spécifiés dans un seul des groupes Manipulation de matériaux à cet effet en utilisant une série de récipients à échantillons déplacés par un transporteur passant devant un ou plusieurs postes de traitement ou d'analyse

Abrégé

On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).

Classes IPC  ?

• H01L 29/04 - Corps semi-conducteurs caractérisés par leur structure cristalline, p.ex. polycristalline, cubique ou à orientation particulière des plans cristallins

Abrégé

Disclosed is a liquid sodium battery wherein two electrode members that sandwich a partition made of a solid substance that transmits Na ions are constructed with a metal having a work function which has an absolute value that is lower than the absolute value of the work function of sodium and with a metal having a work function which has an absolute value that is higher than the absolute value of the work function of sodium.

Classes IPC  ?

• H01M 10/39 - Accumulateurs non prévus dans les groupes fonctionnant à haute température

Abrégé

−3 near a surface of the semiconductor substrate.

Classes IPC  ?

• H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage

Abrégé

A carbon material dispersion characterized by comprising a dispersion medium and, dispersed therein, a carbon material having a fluorinated surface, the carbon material having been obtained by bringing a treating gas having a fluorine concentration of 0.01-100 vol.% into contact with a carbon material under the conditions of 150-600ºC.

Classes IPC  ?

• C01B 31/02 - Préparation du carbone; Purification

Abrégé

The insulation breakdown voltage of a coating insulating film used in an element isolation region is improved.  A coating film formed from a composition that is obtained by adding one or more kinds of compounds, which contains a different element M capable of forming an oxide in an amount of 0.5-11.1 mol% relative to the mole number of Si, to a compound represented by the following general formula: ((CH3)nSiO2-n/2)x(SiO2)1-x (wherein n = 1-3 and 0 ≤ x ≤ 1.0), is used as an insulating coating film that is used in an element isolation region.

Classes IPC  ?

• H01L 21/76 - Réalisation de régions isolantes entre les composants
• H01L 21/314 - Couches inorganiques
• H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde

Abrégé

In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding table in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding table to cause a self-bias voltage to generate on the surface of the substrate.  The RF power is applied several times in the form of pulses.

Classes IPC  ?

• H01L 21/265 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée produisant une implantation d'ions
• H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes

Abrégé

Provided are photovoltaic elements that are equipped with an n-i-p structure formed with amorphous silicon and with which energy conversion efficiency is improved by a structure wherein an n+-type a-Si layer contacts a transparent electrode formed by an n+-type ZnO layer. The impact on global resources is thereby kept to a minimum, and photovoltaic elements and solar batteries with large surface area and high power output can be realized.

Classes IPC  ?

• H01L 31/04 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails adaptés comme dispositifs de conversion photovoltaïque [PV]

Abrégé

n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.

Classes IPC  ?

• F16K 31/12 - Moyens de fonctionnementDispositifs de retour à la position de repos actionnés par un fluide
• F16K 31/36 - Moyens de fonctionnementDispositifs de retour à la position de repos actionnés par un fluide et dans lesquels il y a alimentation constante du moteur à fluide par le fluide provenant de la canalisation

Abrégé

Disclosed is a brewed liquid filtering system which enables a reduction in production cost and has a structure suitable for cleaning of the filter. This brewed liquid filtering system (1) has a first branching pipe and a second branching pipe. The first branching pipe and the second branching pipe are provided with a first filter and a second filter. The first branching pipe is provided with first branching pipe valves (V1-1), (V1-2) which interpose the first filter; in addition, first cleaning pipes (10-31), (10-32) which are provided nearer the first filter than the first branching pipe valves (V1-1), (V1-2) are connected to the first branching pipe. The second branching pipe is provided with second branching pipe valves (V2-1), (V2-2) which interpose the second filter; in addition, second cleaning pipes (10-33), (10-34) which are provided nearer the second filter than the second branching pipe valves (V2-1), (V2-2) are connected to the second branching pipe.

Classes IPC  ?

• C12H 1/16 - Pasteurisation, stérilisation, conservation, purification, clarification ou vieillissement des boissons alcoolisées sans précipitation par des moyens physiques, p. ex. irradiation
• C12G 3/02 - Préparation d'autres boissons alcoolisées par fermentation

Abrégé

Provided is a method for manufacturing a semiconductor device realizing a contact of low resistance ratio. In the state that a first metal layer in contact with a semiconductor is coated with a second metal layer for preventing oxidization, only the first metal layer is silicided so as to form a silicide layer not mixed with oxygen.  The first metal layer is made from such a metal material that a difference in the work function from the semiconductor is a predetermined value.  The second metal layer is made from such a metal material that no reaction with the first metal layer is caused by the anneal temperature.

Classes IPC  ?

• H01L 21/28 - Fabrication des électrodes sur les corps semi-conducteurs par emploi de procédés ou d'appareils non couverts par les groupes
• H01L 21/336 - Transistors à effet de champ à grille isolée
• H01L 21/8238 - Transistors à effet de champ complémentaires, p.ex. CMOS
• H01L 27/092 - Transistors à effet de champ métal-isolant-semi-conducteur complémentaires
• H01L 29/78 - Transistors à effet de champ l'effet de champ étant produit par une porte isolée
• H01L 29/786 - Transistors à couche mince

Abrégé

The objective is to achieve improved sputter process efficiency and production efficiency for a magnetron sputtering method that uses a rectangular target. This magnetron sputtering device (10) is an upright, transit-type sputtering device that forms a sputter film while standing substrates (PL), (PR) upright and causing them to move (transit), and that is equipped with a single or a shared magnetic field generation mechanism (42) and symmetrical targets (12L), (12R) to the left/right (top/bottom in the figure), thus configuring a sputtering device that can process two substrates simultaneously.

Classes IPC  ?

• C23C 14/35 - Pulvérisation cathodique par application d'un champ magnétique, p. ex. pulvérisation au moyen d'un magnétron
• C23C 14/34 - Pulvérisation cathodique
• H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p. ex. condensation

Abrégé

In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, it is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. In a magnetron sputtering apparatus, a plasma shielding member having a slit is disposed on an opposite side of a target with respect to a rotary magnet group. The distance between the plasma shielding member and the substrate is set shorter than the electron mean free path or the sheath width. Further, the width and the length of the slit are controlled to prevent impingement of plasma on the processing substrate. This makes it possible to reduce the failure rate of the substrates.

Classes IPC  ?

• H01J 37/32 - Tubes à décharge en atmosphère gazeuse
• H01J 37/34 - Tubes à décharge en atmosphère gazeuse fonctionnant par pulvérisation cathodique
• C23C 14/35 - Pulvérisation cathodique par application d'un champ magnétique, p. ex. pulvérisation au moyen d'un magnétron

Abrégé

It is possible to obtain a cathode body which can maintain a long service life even when a large current has flown.  Provided is a magnetron cathode body including as a base material, a metal of a high melting point having an electron emission material inside and coated by borax of rare earth.  The electron emission material and the metal of a high melting point are preferably La2O3 and W, respectively.  The borax of rare earth is preferably LaB6.

Classes IPC  ?

• H01J 23/04 - Cathodes
• H01J 1/14 - Cathodes thermo-ioniques solides caractérisées par le matériau constitutif
• H01J 9/04 - Fabrication des électrodes ou des systèmes d'électrodes des cathodes thermo-ioniques
• H01J 23/00 - Détails des tubes à temps de transit des types couverts par le groupe