A vacuum gauge protector for deposition systems includes a body comprising an input port that is configured to couple to a vacuum chamber, and an output port configured to couple to a vacuum gauge. A deposition material filter is positioned in the body to present a tortuous path to gases comprising deposition materials entering the body where the surface area of the deposition material filter is greater than 2000 mm2. In addition, the deposition material filter restricts deposition material from passing through the body to the output port so as to reduce vacuum gauge contamination while maintaining enough gas flow through the body to the output port so that the vacuum gauge response time can be less than 10 seconds.
G01L 19/06 - Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A gas manifold includes a gas inlet surface having a first and second gas input port and a gas outlet surface. A first internal chamber is coupled to the first gas input port. A first plurality of gas conduits, each including an input coupled to the first internal chamber and an outlet at the gas outlet surface where a direction of at least one of the conduits in the first plurality of gas conduits relative to the gas outlet surface is different. A second internal chamber is coupled to the second gas input port and is isolated from the first internal chamber. A second plurality of gas conduits, each including an input coupled to the second internal chamber and an outlet at the gas outlet surface. A direction of at least one of the conduits in the second plurality of gas conduits relative to the gas outlet surface is different. Directions of at least some of the gas conduits in the first and second plurality of gas conduits relative to the gas outlet surface can be selected to provide a desired gas flow pattern proximate to the gas outlet surface.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/54 - Apparatus specially adapted for continuous coating
3.
Gas manifold for simultaneous gas property control in deposition systems
A gas manifold includes a gas inlet surface having a first and second gas input port and a gas outlet surface. A first internal chamber is coupled to the first gas input port. A first plurality of gas conduits, each including an input coupled to the first internal chamber and an outlet at the gas outlet surface where a direction of at least one of the conduits in the first plurality of gas conduits relative to the gas outlet surface is different. A second internal chamber is coupled to the second gas input port and is isolated from the first internal chamber. A second plurality of gas conduits, each including an input coupled to the second internal chamber and an outlet at the gas outlet surface. A direction of at least one of the conduits in the second plurality of gas conduits relative to the gas outlet surface is different. Directions of at least some of the gas conduits in the first and second plurality of gas conduits relative to the gas outlet surface can be selected to provide a desired gas flow pattern proximate to the gas outlet surface.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/54 - Apparatus specially adapted for continuous coating
2. In addition, the deposition material filter restricts deposition material from passing through the body to the output port so as to reduce vacuum gauge contamination while maintaining enough gas flow through the body to the output port so that the vacuum gauge response time can be less than 10 seconds.
G01L 19/06 - Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A microchannel plate includes a substrate defining a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a predetermined resistivity that is substantially constant. An emissive layer is formed over the resistive layer. A top electrode is positioned on the top surface of the substrate. A bottom electrode positioned on the bottom surface of the substrate.
A microchannel plate includes a substrate defining a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a predetermined resistivity that is substantially constant. An emissive layer is formed over the resistive layer. A top electrode is positioned on the top surface of the substrate. A bottom electrode positioned on the bottom surface of the substrate.
An image intensifying device includes a lens that is positioned at a light input that forms an image of a scene. The image intensifying device also includes an image intensifier tube that includes a photocathode that is positioned to receive the image formed by the lens. The photocathode generates photoelectrons in response to the light image of the scene. The image intensifier tube also includes a microchannel plate having an input surface comprising the photocathode. The microchannel plate receives the photoelectrons generated by the photocathode and generating secondary electrons. An electron detector receives the secondary electrons generated by the microchannel plate and generates an intensified image of the scene.
A method of fabricating a microchannel plate includes forming a plurality of pores in a silicon substrate. The plurality of pores is oxidized, thereby consuming silicon at surfaces of the plurality of pores and forming a silicon dioxide layer over the plurality of pores. At least a portion of the silicon dioxide layer is stripped, which reduces a surface roughness of the plurality of pores. A semiconducting layer can be deposited onto the surface of the silicon dioxide layer. The semiconducting layer is then oxidized, thereby consuming at least some of the polysilicon or amorphous silicon layer and forming an insulating layer. Resistive and secondary electron emissive layers are then deposited on the insulating layer by atomic layer deposition.
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
B31D 3/00 - Making articles of cellular structure, e.g. insulating board
G02B 6/10 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
C25D 5/48 - After-treatment of electroplated surfaces
9.
Microchannel plate devices with tunable resistive films
A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.
A microchannel plate includes a substrate defining a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a predetermined resistivity that is substantially constant. An emissive layer is formed over the resistive layer. A top electrode is positioned on the top surface of the substrate. A bottom electrode positioned on the bottom surface of the substrate.
An image intensifying device includes a lens that is positioned at a light input that forms an image of a scene. The image intensifying device also includes an image intensifier tube that includes a photocathode that is positioned to receive the image formed by the lens. The photocathode generates photoelectrons in response to the light image of the scene. The image intensifier tube also includes a microchannel plate having an input surface comprising the photocathode. The microchannel plate receives the photoelectrons generated by the photocathode and generating secondary electrons. An electron detector receives the secondary electrons generated by the microchannel plate and generates an intensified image of the scene.
A method of fabricating a microchannel plate includes defining a plurality of pores extending from a top surface of a substrate to a bottom surface of the substrate where the plurality of pores has a resistive material on an outer surface that forms a first emissive layer. A second emissive layer is formed over the first emissive layer. The second emissive layer is chosen to achieve at least one of an increase in secondary electron emission efficiency and a decrease in gain degradation as a function of time. A top electrode is formed on the top surface of the substrate and a bottom electrode is formed on the bottom surface of the substrate.
A microchannel plate includes a substrate defining a plurality of pores extending from a top surface of the substrate to a bottom surface of the substrate. The plurality of pores includes a resistive material on an outer surface that forms a first emissive layer. A second emissive layer is formed over the first emissive layer. The second emissive layer is chosen to achieve at least one of an increase in secondary electron emission efficiency and a decrease in gain degradation as a function of time. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate.
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Thin film deposition chemical processing services in the fields of engineered materials, micro-structures and process equipment and technology Scientific and technological research and design services in the fields of engineered materials, micro-structures and process equipment and technology
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Thin film deposition chemical processing services in the fields of engineered materials, micro-structures and process equipment and technology Scientific and technological research and design services in the fields of engineered materials, micro-structures and process equipment and technology
16.
Microchannel amplifier with tailored pore resistance
A microchannel amplifier includes an insulating substrate that defines at least one microchannel pore through the substrate from an input surface to an output surface. A conductive layer is formed on an outer surface of the at least one microchannel pore that has a non-uniform resistance as a function of distance through the at least one microchannel pore. The non-uniform resistance is selected to simulate saturation by reducing gain as a function of input current and bias voltage compared with uniform resistance. A first and second electrode is deposited on a respective one of the input and the output surfaces of the insulating substrate. The microchannel amplifier amplifying emissions propagating through the at least one microchannel pore when the first and second electrodes are biased.
