Disclosed is a copper foil for a printed circuit board comprising a roughened surface of a copper foil, a layer containing nickel and zinc or compounds of nickel and zinc (hereinafter referred to as a “nickel zinc layer”), and a chromate film layer on the nickel zinc layer. The copper foil is characterized in that the weight of zinc deposited per unit area of the copper foil in the nikel zinc layer is not less than 180 μg/dm2 and not more than 3500 μg/dm2, and the proportion of the weight of nickel in the plating film, i.e., {weight of nickel deposited/(weight of nickel deposited + weight of zinc deposited)} is not less than 0.38 and not more than 0.7. The above constitution can establish a surface treatment technique of a copper foil, which can effectively prevent a circuit erosion phenomenon when a copper foil is stacked on a resin base material and a circuit is subjected to soft etching with a sulfuric acid/hydrogen peroxide etching solution.
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
Provided is a substrate wherein resistances of a gate electrode and a source/drain region are reduced and current efficiency is increased. Furthermore, the substrate makes microminiaturization possible and can be manufactured without requiring a complicated process. A metal is selectively deposited on a surface of one or a plurality of regions composed of a predetermined composition on a base material having, on a surface, the region composed of the composition different from that of the surrounding regions, and heat treatment is performed. On a part of or the entire region whereupon the metal is deposited, a compound, which is composed of the metal and an element constituting the base material surface region whereupon the metal is deposited, is formed. It is preferable that the compound, which is composed of the metal and the element constituting the base material surface region whereupon the metal is deposited, is formed on a part of the region whereupon the metal is deposited, and that a part of the deposited metal is left as an unreacted metal.
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
Disclosed is a positive electrode active material for a positive electrode material in a lithium ion battery that can more reliably ensure the characteristics and safety of a lithium ion battery by investigating the relationship between the content of cobalt (Co) considered as being involved in a crystal structure and a lattice constant, specifying the relationship to realize a positive electrode active material having high crystallinity, high capacity and high safety and using this material. The positive electrode active material comprises a lithium-containing nickel manganese cobalt composite oxide having a layered structure and represented by LiaNixMnyCozO2 wherein 1.0 < a < 1.3 and 0.8 < x + y + z < 1.1. The positive electrode active material satisfies a molar volume upper limit requirement of Vm = 21.276 - 0.0117z and a molar volume lower limit requirement of Vm = 21.164 - 0.0122z in a region of a graph in which a molar volume Vm estimated by a lattice constant calculated from a (018) plane and a (113) plane in a powder X ray diffraction pattern using a CuKα radiation is plotted as the ordinate and the content z of Co in a metal component (% by mole) is plotted as the abscissa. In this case, both the half value width of the (018) plane and the half value width of the (113) plane are not more than 0.200°.
Disclosed is a low particulate-generating sputtering target, wherein the target surface contains 1 to 50%, by volume ratio, of an intermetallic compound, oxide, carbide, carbonitride, or other non-ductile substance in a highly ductile matrix phase, and wherein the center-line average surface roughness Ra is 0.1 쎽m or less, the 10-point average roughness Rz is 0.4 쎽m or less, the distance between local peaks (roughness motif) AR is 120 쎽m or less, and the average amplitude in the wave motif AW is 1500 쎽m or greater. Provided are a sputtering target wherein the target surface, which contains large amounts of non-ductile substance, is improved, and whereby the generation of nodules and particles during sputtering can be prevented or suppressed, and a method of processing said surface.
A tin-plated Cu-Ni-Si alloy strip having excellent unsusceptibility to thermal tin deposit peeling. The tin-plated copper alloy strip is a tin-plated strip of a copper alloy which contains 1.0-4.5 mass% nickel and contains silicon in an amount of 1/6 to 1/4 the mass% of the nickel and which optionally contains at least one member selected from a group consisting of zinc, tin, magnesium, cobalt, silver, chromium, and magnesium in a total amount of 2.0 mass% or smaller, the remainder being copper and incidental impurities. The interface between the copper alloy and the deposit phase directly overlying the alloy has a silicon concentration which is not higher than 120% of the silicon concentration of the copper alloy composition.
A Cu-Ni-Si-Co alloy is provided which has mechanical and electrical properties which render the alloy suitable as a copper alloy for electronic materials. The alloy is even in mechanical properties. This copper alloy for electronic materials contains 1.0-2.5 mass% nickel, 0.5-2.5 mass% cobalt, and 0.3-1.2 mass% silicon, with the remainder being copper and incidental impurities. This alloy has an average crystal-grain diameter of 15-30 µm, and the average difference between a maximum crystal-grain diameter and a minimum crystal-grain diameter for examination fields of view each having an area of 0.5 mm2 is 10 µm or less.
C22C 9/01 - Alloys based on copper with aluminium as the next major constituent
C22C 9/02 - Alloys based on copper with tin as the next major constituent
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22C 9/10 - Alloys based on copper with silicon as the next major constituent
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
H01B 5/02 - Single bars, rods, wires or strips; Bus-bars
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
Corson alloy characteristics are improved by controlling the distribution profile of Ni-Si compound particles. Disclosed is a copper alloy for electronic materials comprising Ni: 0.4 to 6.0 mass% and Si: 0.1 to 2.0 mass%, and the remainder of which is composed of Cu and inevitable impurities, in which alloy for electronic materials, small Ni-Si compound particles with a particle size of 0.01 쎽m or greater and less than 0.05 쎽m, and large Ni-Si compound particles with a particle size of 0.05 쎽m or greater and less than 5.0 쎽m are present. The quantitative density of the small particles is 106 to 1010 particles per 1 mm2, and the quantitative density of the large particles is 1/10,000 to 1/10 the aforementioned quantitative density of the small particles.
C22C 9/01 - Alloys based on copper with aluminium as the next major constituent
C22C 9/02 - Alloys based on copper with tin as the next major constituent
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22C 9/05 - Alloys based on copper with manganese as the next major constituent
C22C 9/10 - Alloys based on copper with silicon as the next major constituent
H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
The issue is to provide a Corson alloy which has significantly improved characteristics, specifically high strength and high conductivity, by better demonstrating the effect of Cr addition to a Cu-Ni-Co-Si type alloy. Disclosed is a copper alloy for electronic materials comprising Ni: 1.0-4.5 mass%, Si: 0.50-1.2 mass%, Co: 0.1-2.5 mass%, Cr: 0.0030-0.3 mass%, and Cu and unavoidable impurities as the remainder. The mass concentration ratio of the total mass of Ni and Co with respect to Si (the [Ni+Co]/Si ratio) is 4 ≤ [Ni+Co]/Si ≤ 5. For the Cr-Si compound with a size in the range of 0.1-5 &mgr;m dispersed in the material, the atom concentration ratio of Cr to Si in the dispersed particles is 1 to 5, and the distribution density is from 1x104 particles/mm2 to 1x106 particles/mm2.
C22C 9/01 - Alloys based on copper with aluminium as the next major constituent
C22C 9/02 - Alloys based on copper with tin as the next major constituent
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22C 9/05 - Alloys based on copper with manganese as the next major constituent
C22C 9/10 - Alloys based on copper with silicon as the next major constituent
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
9.
CU-NI-SI ALLOY TO BE USED IN ELECTRICALLY CONDUCTIVE SPRING MATERIAL
A Cu-Ni-Si base alloy containing Ni in an amount of 1.0 to 4.0 mass% and Si in a concentration of 1/6 to 1/4 of that of Ni, wherein the density of twin boundaries (Σ3 boundaries) is 15 to 60% of all the grain boundaries. The alloy may further contain Mg: 0.2% or less, Sn: 0.2 to 1%, Zn: 0.2 to 1%, Co: 1 to 1.5%, and/or Cr: 0.05 to 0.2%.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22C 9/02 - Alloys based on copper with tin as the next major constituent
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
10.
TINNED COPPER ALLOY BAR WITH EXCELLENT ABRASION RESISTANCE, INSERTION PROPERTIES, AND HEAT RESISTANCE
Disclosed is a tinned bar with excellent abrasion resistance, insertion properties and heat resistance that is suitable for use as conductive spring material. In an electroplating process, the surface of a copper alloy bar is base-plated and then Sn-plated. This is followed by a reflow process. The height difference between the outermost surface of the Sn plating and the outermost point of the Cu-Sn alloy phase of the copper alloy tinned bar is 0.1-0.5 mm, the maximum height of the roughness curve of the Cu-Sn alloy phase is 0.6-1.2 mm, the average length of the roughness curve of the Cu-Sn alloy phase is 2.0-5.0 mm, and preferably 2.0 ≤ Rsm/(y + Rz) ≤ 4.0. From its surface to the base material, the plating film consists of a Sn layer 0.5-1.5 mm thick, a Cu-Sn alloy layer 0.6-2.0 mm thick, and a Cu layer 0-0.8 mm thick, of a Sn layer 0.5-1.5 mm thick, a Cu-Sn layer 0.4-2.0 mm thick, and a Ni layer 0.1-0.8 mm thick.
C25D 7/00 - Electroplating characterised by the article coated
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 5/50 - After-treatment of electroplated surfaces by heat-treatment
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
11.
PLATINUM POWDER FOR MAGNETIC MATERIAL TARGET, METHOD FOR PRODUCING THE POWDER, METHOD FOR PRODUCING MAGNETIC MATERIAL TARGET COMPOSED OF PLATINUM SINTERED COMPACT, AND THE SINTERED MAGNETIC MATERIAL TARGET
Disclosed is a platinum powder for magnetic material targets, which has a particle size distribution of 0.1-5 μm. The impurities contained in the platinum powder for magnetic material targets are limited as follows: sodium, potassium and calcium contents are all less than 20 wt ppm; hydrogen and chlorine contents are respectively less than 500 wt ppm; carbon, nitrogen and oxygen contents are respectively less than 1000 wt ppm; and the other impurities are respectively less than 10 ppm, and less than 100 ppm in total. The platinum powder contains little impurities and can be obtained at low cost. A material suitable for production of a magnetic recording medium can be obtained by using a high-purity sputtering target produced from the platinum powder.
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 3/14 - Both compacting and sintering simultaneously
B22F 9/24 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
C22C 5/04 - Alloys based on a platinum group metal
Disclosed is a sintered silicon wafer which is characterized by having a maximum crystal grain size of not more than 20 &mgr;m, an average crystal grain size of not less than 1 &mgr;m but not more than 10 &mgr;m, a volume ratio of silicon oxide contained in the wafer of not less than 0.01% but not more than 0.2%, a volume ratio of silicon carbide of not less than 0.01% but not more than 0.15%, and a volume ratio of metal silicides of not more than 0.006%. The sintered silicon wafer has a certain strength even when the wafer has a large diameter, and has mechanical properties and smoothness equal or quite similar to those of a single crystal silicon.
A sputtering target consisting of a nonmagnetic-in -ferromagnetic dispersion type material. This sputtering target comprises a phase (A) composed of both a ferromagnetic Co-Cr alloy material consisting of 5 to 20 at% Cr and the balance Co and nonmagnetic material particles dispersed in the ferromagnetic Co-Cr alloy material and a flaky structure (B) of a Co-Cr alloy phase which is present in the phase (A) and 30 to 100 &mgr;m in breadth and 50 to 300 &mgr;m in length. The nonmagnetic material particles are each smaller than any imaginary circle formed with a radius of 1&mgr;m around an arbitrary point present within the particle, or alternatively the nonmagnetic material particles have each such shape and dimension that at least two contact or intersection points exist between the imaginary circle and the interface between the ferromagnetic material and the nonmagnetic material. The sputtering target attains high PTF (pass through flux) and enables high-speed film formation by a DC magnetron sputtering device. Further, the sputtering target is decreased in the quantity of particles (dust) or nodules generated in sputtering, so that the variation of quality is reduced to bring about improvement in the mass productivity. The sputtering target comprises fine crystal grains and has a high density.
C22C 19/07 - Alloys based on nickel or cobalt based on cobalt
C22C 32/00 - Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
C22C 49/14 - Alloys containing metallic or non-metallic fibres or filaments characterised by the fibres or filaments
G11B 5/851 - Coating a support with a magnetic layer by sputtering
H01F 10/16 - Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
H01F 41/18 - Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
14.
ELECTROLYTIC SOLUTION FOR PRODUCING ELECTROLYTIC COPPER FOIL
An electrolytic copper solution for producing an electrolytic copper foil is provided which can improve elongation properties while reducing the profile of the rough surface. The electrolytic solution for electrolytic-copper foil production is a sulfuric-acid-acidified aqueous copper sulfate solution containing: bromide ions derived from bromine, an inorganic acid thereof, an inorganic salt thereof, or a mixture of these; a glue; and chloride ions.
Disclosed is a sintered target which comprises the elements (A) and (B) shown below, in which pores having an average diameter of 1 &mgr;m or more are not formed, and in which 100 or less micropores having an average diameter of less than 1 &mgr;m are formed per 40000 &mgr;m2 of the surface of the target: (A) at least one chalcogenide element selected from S, Se and Te; and (B) at least one Vb Group element selected from Bi, Sb, As, P and N. It becomes possible to provide a technique for eliminating a cause of the particle-dropping or the formation of nodules in the target during sputtering and for suppressing the formation of particles.
G11B 7/243 - Record carriers characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
G11B 7/26 - Apparatus or processes specially adapted for the manufacture of record carriers
Disclosed is a technique for forming a ULSI fine copper wiring by a simpler process. Specifically disclosed is an electronic member wherein an alloy thin film of tungsten and a noble metal, which is used as a barrier-seed layer for a ULSI fine copper wiring, is formed on a base. The electronic member is characterized in that the alloy thin film has a composition containing not less than 60 atom% of tungsten and not less than 5 atom% but not more than 40 atom% of the noble metal. The noble metal is preferably composed of one or more metals selected from platinum, gold, silver and palladium.
Disclosed is a technique for forming a ULSI fine copper wiring by a simpler process. Specifically disclosed is an electronic member wherein an alloy thin film of tungsten and a noble metal, which is used as a barrier-seed layer for a ULSI fine copper wiring, is formed on a base. The electronic member is characterized in that the alloy thin film has a composition containing not less than 50 atom% of tungsten and not less than 5 atom% but not more than 50 atom% of the noble metal. The noble metal is preferably composed of one or more metals selected from ruthenium, rhodium and iridium.
A process for the recovery of valuable metals from scrap IZO, characterized by conducting electrolysis by using an insoluble electrode as the anode and scrap IZO as the cathode to recover metallic indium and zinc or suboxides of both. The invention provides a process for recovering indium and zinc efficiently from scrap IZO such as indium zinc oxide (IZO) sputtering targets or IZO remnants generated in the production.
An Sb-Ti alloy powder for sintering, characterized by consisting of particles having a mean particle diameter of 0.1 to 200μm and by having an oxygen content of 1000wtppm or below; and a sintered target made of an Sb-Te alloy, characterized by an oxygen content of 1000wtppm or below, a bending strength of 50MPa or above, and a relative density of 99% or above. The sintered target has a uniform and refined structure, and is inhibited from cracking and from arcing in sputtering by virtue of the structure. Further, the surface unevenness caused by sputter erosion is reduced, whereby a high-quality Sb-Te alloy sputtering target can be obtained.
A method of recovering valuable metals from IZO scraps, characterized by using the IZO scraps respectively as an anode and a cathode to conduct electrolysis while periodically reversing the polarity, and recovering the indium and zinc in the form of hydroxides. The method of recovering valuable metals from IZO scraps may be one characterized in that the hydroxides of indium and zinc obtained by the electrolysis are roasted to recover the indium and zinc in the form of oxides. By the method, indium and zinc can be efficiently recovered from IZO scraps such as an indium-zinc oxide (IZO) sputtering target and IZO fragments generating during production.
A method of recovering valuable metals from an IZO scrap, characterized by using an insoluble electrode as an anode or cathode and using the IZO scrap as a cathode or anode, which serves as a counter electrode for the insoluble electrode, to conduct electrolysis while periodically reversing the polarity, and recovering the indium and zinc in the form of hydroxides from the IZO scrap. The method of recovering valuable metals from an IZO scrap may be one characterized in that the hydroxides of indium and zinc obtained by the electrolysis are roasted to recover the indium and zinc in the form of oxides. By the method, indium and zinc can be efficiently recovered from IZO scraps such as an indium-zinc oxide (IZO) sputtering target and IZO fragments generating during production.
An adhesive-free flexible laminate comprising a polyimide film at least one side of which has been treated with a plasma, a tie-coat layer formed on the plasma-treated surface, a metal seed layer formed on the tie-coat layer, and a metallic conductor layer formed on the metal seed layer. The laminate is characterized in that the ratio of the actual density (ρp) to the theoretical density (ρt), ρp/ρt, in the tie-coat layer satisfies ρp/ρt>0.6. In the adhesive-free flexible laminate (in particular, the laminate with two metallizing layers), the adhesion between the metallic layer(s) and the polyimide film is heightened.
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
Provided is a method for manufacturing an ytterbium sputtering target. In the method, an ytterbium target material having a surface Vickers hardness (Hv) of 15 or more but not more than 40 is previously manufactured, and final finish processing is performed by machining to the surface of the ytterbium target material having such surface hardness. Unevenness (tear) that exists on the target surface after the final finish processing of the target material is remarkably reduced and generation of particles while performing sputtering is suppressed.
C22F 1/02 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
C22F 1/16 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
24.
ULSI MICRO-INTERCONNECT MEMBER HAVING RUTHENIUM ELECTROPLATING LAYER ON BARRIER LAYER
An object of the invention is to provide a ULSI micro-interconnect member wherein the coverages of especially the inner side surfaces of vias and trenches are adequate, the thickness with respect to the surface portion is even, and the member has a seed layer of little impurity concentration is formed. Another object of the invention is to provide a ULSI micro-interconnect member having a micro-interconnect free of voids and formed by consecutive copper-electroplating by utilizing such a seed layer, a method for forming such a member, and a semiconductor wafer having such a ULSI micro-interconnect. A ULSI micro-interconnect member comprises a substrate and a ULSI micro-interconnect formed on the substrate. The ULSI micro-interconnect is composed of a barrier layer formed on the substrate and a ruthenium electroplating layer formed on the barrier layer is disclosed. Another ULSI micro-interconnect member comprising a ruthenium layer and a copper electroplating layer formed using the ruthenium layer as the seed layer and a method for forming the member are also disclosed.
Provided is a method for manufacturing a double layer copper clad laminated board characterized in having improved folding endurance of 150 times or more, as a result of folding endurance test conforming to JIS C6471, by performing heat treatment at a temperature of 100°C or higher but not higher than 175°C to the double layer copper clad laminated board having a copper layer formed on a polyimide film by sputtering and plating. The method is provided for manufacturing the double layer copper clad laminated board (double layer CCL material) wherein the copper layer is formed on the polyimide film by sputtering and plating, folding endurance is improved and breakage of an outer lead section of a circuit is eliminated, and such double layer copper clad laminated board is also provided.
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
H05K 1/09 - Use of materials for the metallic pattern
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/22 - Secondary treatment of printed circuits
26.
HIGHLY PURE LANTHANUM, SPUTTERING TARGET COMPRISING HIGHLY PURE LANTHANUM, AND METAL GATE FILM MAINLY COMPOSED OF HIGHLY PURE LANTHANUM
Disclosed is highly pure lanthanum which has a purity of 4 N or more as determined by excluding any rare earth element or any gaseous component therefrom, and which contains aluminum, iron and copper each in an amount of 100 wtppm or less. Also disclosed is highly pure lanthanum, which has a purity of 4 N or more as determined by excluding any rare earth element or any gaseous component therefrom, which contains aluminum, iron and copper each in an amount of 100 wtppm or less, which contains oxygen in an amount of 1500 wtppm or less, which contains an alkali metal element and an alkali earth metal element each in an amount of 1 wtppm or less, which contains a transition metal element and a high-melting-point metal element other than those mentioned above each in an amount of 10 wtppm or less, and which contains a radioactive element in an amount of 10 wtppb or less. Further disclosed is a technique for efficiently and stably providing highly pure lanthanum, a sputtering target comprising a highly pure lanthanum material and a metal gate thin film mainly composed of a highly pure lanthanum material.
Disclosed is a process for producing a thin film of an a-IGZO oxide that, in a sputtering method, can bring the carrier concentration of the film to a predetermined value with good reproducibility. The process is a process for producing a thin film of an amorphous In-Ga-Zn-O-based oxide and comprises forming a film on a substrate by direct current sputtering at a sputter power density of 2.5 to 5.5 W/cm2 using a sputtering target of an oxide sintered compact that is composed mainly of indium (In), gallium (Ga), zinc (Zn), and oxygen (O), has an atomic ratio of indium to the total amount of indium and gallium, i.e., [In]/([In] + [Ga]), of 20% to 80%, an atomic ratio of zinc to the total amount of indium, gallium, and zinc, i.e., [Zn]/([In] + [Ga] + [Zn]), of 10% to 50%, and has a specific resistance of not more than 1.0 × 10-1 Ωcm.
C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
Provided is a copper foil which is to be used for a printed wiring board, has both excellent adhesiveness to an insulating board and excellent etching characteristics and suitable for fine pitches. The copper foil is provided with a copper foil base material and a coat layer which covers at least a part of the surface of the copper foil base material. In the copper foil, (1) the coat layer is composed of a Ni layer and a Cr layer which are sequentially laminated from a surface of the copper foil base material, (2) a Cr of 15-210&mgr;g/dm2 and a Ni of 15-440&mgr;g/dm2 exist in the coat layer, and (3) the maximum thickness is 0.5-5nm and the minimum thickness is 80% or more of the maximum thickness when a cross-section of the coat layer is observed by a transmission electron microscope.
Disclosed is a substrate having a barrier film for preventing copper diffusion which has barrier ability and catalytic ability, while being excellent in barrier properties when heated at high temperatures. Also disclosed is a method for manufacturing such a substrate. Specifically disclosed is a substrate characterized by having, on a base, a barrier film for preventing copper diffusion which is composed of one or more metal elements selected from tungsten, molybdenum and niobium, a metal element such as platinum, gold, silver or palladium that has a catalytic ability for electroless plating, and nitrogen contained in the form of a nitride of the one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is produced by performing a sputtering process in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium, and one or more metal elements selected from the metal elements having a catalytic ability for electroless plating.
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/18 - Pretreatment of the material to be coated
C23C 18/40 - Coating with copper using reducing agents
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
Disclosed is a substrate having a barrier film for preventing copper diffusion which has barrier ability and catalytic ability, while being excellent in barrier properties when heated at high temperatures. Also disclosed is a method for manufacturing such a substrate. Specifically disclosed is a substrate characterized by having, on a base, a barrier film for preventing copper diffusion which is composed of one or more metal elements selected from tungsten, molybdenum and niobium, a metal element such as ruthenium, rhodium or iridium that has a catalytic ability for electroless plating, and nitrogen contained in the form of a nitride of the one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is produced by performing a sputtering process in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium, and one or more metal elements selected from the metal elements having a catalytic ability for electroless plating.
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
C23C 18/16 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating
C23C 18/18 - Pretreatment of the material to be coated
C23C 18/40 - Coating with copper using reducing agents
H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
31.
THIN FILM MAINLY COMPOSED OF TITANIUM OXIDE, SINTERED SPUTTERING TARGET SUITABLE FOR THE PRODUCTION OF THIN FILM MAINLY COMPOSED OF TITANIUM OXIDE, AND METHOD FOR PRODUCTION OF THIN FILM MAINLY COMPOSED OF TITANIUM OXIDE
Disclosed is a thin film mainly composed titanium oxide, which comprises 29.6 to 34.0 at% (inclusive) of Ti and 0.003 to 7.4 at% (inclusive) of Ag, with the remainder being O (oxygen), wherein the ratio of oxygen to the metal components [i.e., O/(2Ti+0.5 Ag)] is 0.97 or more. It becomes possible to provide: a thin film mainly composed of titanium oxide, which has a high refractive index and a low extinction coefficient; a sintered sputtering target which is mainly composed of titanium oxide and which is suitable for the production of the thin film; and a method for producing a thin film mainly composed of titanium oxide. It also becomes possible to provide a thin film which has excellent permeability, which is hardly reduced in its reflectance, and which is useful as an interference film or a protective film for an optical information recording medium. The thin film can be applied to a glass substrate; namely the thin film can be used as a heat ray-reflective film, an antireflection film or an interference film.
C04B 35/46 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on titanium oxides or titanates
G11B 7/24 - Record carriers characterised by shape, structure or physical properties, or by the selection of the material
G11B 7/254 - Record carriers characterised by the selection of the material of layers other than recording layers of protective topcoat layers
G11B 7/257 - Record carriers characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers, sensitising layers or dielectric layers which are protecting the recording layers
G11B 7/26 - Apparatus or processes specially adapted for the manufacture of record carriers
Copper foil including an electric resistive film layer characterized in that a copper-zinc alloy layer containing 1000 &mgr;g/dm2 to 9000 &mgr;g/dm2 of zinc per unit area is provided on a roughened surface or a glossy surface of the copper foil, a stabilized layer with a thickness between 5 Å and 100 Å made of at least one component selected from among zinc oxide, chromium oxide, and nickel oxide is formed on the copper-zinc alloy layer, and a film layer made of an electric resistive material is provided on the stabilized layer. The additional formation of the electric resistive film layer in the copper foil enables a resistor to be embedded in a substrate, and the copper foil includes the resistive film layer with improved adhesiveness.
B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 9/08 - Electrolytic coating other than with metals with inorganic materials by cathodic processes
33.
COPPER ANODE OR PHOSPHORUS-CONTAINING COPPER ANODE, METHOD FOR ELECTROPLATING COPPER ON SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER WITH PARTICLE NOT SIGNIFICANTLY DEPOSITED THEREON
This invention provides a copper anode or a phosphorus-containing copper anode for use in electrolytic copper plating on a semiconductor wafer, characterized in that the purity of the copper anode or the phosphorus-containing copper anode excluding phosphorus is not less than 99.99% by weight, and the content of silicon as an impurity is not more than 10 ppm by weight. There are also provided a method for electroplating copper which, in electrolytic copper plating, can efficiently prevent the deposition of particles onto an object to be plated, particularly onto a semiconductor wafer, a phosphorus-containing copper anode for electrolytic copper plating, and a semiconductor wafer comprising a copper layer, with particles not significantly deposited thereon, formed by electrolytic copper plating using them.
A tin-plated material having a three-layer structure composed of a nickel layer, a copper-tin alloy layer, and a tin layer. The material is reduced in insertion force and improved in heat resistance. The tin-plated material comprises copper or a copper alloy and, formed by plating on the surface thereof in the following order, a primer deposit layer having a thickness of 0.2-1.5 쎽m made of nickel or a nickel alloy, an intermediate deposit layer having a thickness of 0.1-1.5 쎽m made of a copper-tin alloy, and a surface deposit layer having a thickness of 0.1-1.5 쎽m made of tin or a tin alloy. The copper-tin alloy constituting the intermediate deposit layer has an average crystal grain diameter, as determined through an examination of a section of the deposit layer, of 0.05-0.5 쎽m, excluding 0.5 쎽m.
C25D 7/00 - Electroplating characterised by the article coated
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
C25D 5/50 - After-treatment of electroplated surfaces by heat-treatment
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
35.
HIGH-PURITY YTTERBIUM, SPUTTERING TARGET MADE OF HIGH-PURITY YTTERBIUM, THIN FILM CONTAINING HIGH-PURITY YTTERBIUM, AND METHOD FOR PRODUCING HIGH-PURITY YTTERBIUM
Disclosed is a method for producing a high-purity ytterbium, which is characterized in that a high-purity ytterbium is obtained by reducing a crude ytterbium oxide in a vacuum with a reducing metal composed of a metal having a low vapor pressure, and selectively distilling ytterbium. This method enables to increase the purity of ytterbium, which has a high vapor pressure and is hardly purified in a molten state. Also disclosed is a high-purity ytterbium obtained by such a method. Further disclosed is a technique which enables to efficiently and stably obtain a sputtering target composed of a high-purity raw material ytterbium and a thin film for metal gates containing a high-purity raw material ytterbium.
This invention provides a metal covered polyimide composite, which can effectively prevent separation in an adhesive-free flexible laminate (particularly a two-layer flexible laminate), particularly can effectively suppress separation from the interface of a copper layer and a tin plating, and a process for producing the composite and an apparatus for producing the composite. The metal covered polyimide composite comprises a polyimide film, a tie-coat layer and a metal seed layer formed on a surface of the polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating. The metal covered polyimide composite is characterized in that the copper plating layer or the copper alloy plating layer comprises three to one copper or copper alloy layer.
C25D 7/00 - Electroplating characterised by the article coated
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
C25D 5/56 - Electroplating of non-metallic surfaces of plastics
This invention provides a metal covered polyimide composite, which can effectively prevent separation in an adhesive-free flexible laminate (particularly a two-layer flexible laminate), particularly can effectively suppress separation from the interface of a copper layer and a tin plating, and a process for producing the composite and a process for producing an electronic circuit substrate. The metal covered polyimide composite comprises a polyimide film, a tie-coat layer and a metal seed layer formed on a surface of the polyimide film by electroless plating or a drying method, and a copper layer or a copper alloy layer formed thereon by electroplating. The copper plating layer or the copper alloy plating layer comprises three to one copper layer or copper alloy layer. When the copper layer or the copper alloy layer has a three-layer or two-layer structure, an impurity concentrated part is present at the boundary of the copper layer or the copper alloy layer. When the copper layer or the copper alloy layer has a single-layer structure, the impurity concentrated part is absent.
C25D 7/00 - Electroplating characterised by the article coated
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
C25D 5/56 - Electroplating of non-metallic surfaces of plastics
With the development of electronic equipment, in semiconductor devices, the size has been further reduced, and the integration density has been further increased. This tendency has led to a demand for the adoption of a higher temperature in treatment in a production process of printed circuits. Further, in electronic equipment using the printed circuits, heat is generated during its use. This invention provides a technique that, even under these circumstances, does not cause a lowering in bonding strength between a copper foil and a resin base material and, further, in soft etching of a copper foil circuit, can effectively prevent penetration in a circuit edge part. Specifically, this invention provides a copper foil for a printed circuit, comprising a copper foil, a roughened layer of a copper-cobalt-nickel alloy plating provided on a surface of the copper foil, a cobalt-nickel alloy plating layer provided on the roughened layer, and a zinc-nickel alloy plating layer provided on the cobalt-nickel alloy plating layer. The copper foil for a printed circuit is characterized in that the total coverage of the zinc-nickel alloy plating layer is 150 to 500 μg/dm2, and the alloy layer has a nickel ratio range of 0.16 (lower limit) to 0.40 (upper limit) and a nickel content of not less than 50 µg/dm2.
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C25D 9/08 - Electrolytic coating other than with metals with inorganic materials by cathodic processes
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
[PROBLEMS] To provide a fuel cell separator material which permits the formation of a strong and uniform Au layer or Au-containing layer on the surface of a titanium substrate and which can secure the corrosion resistance requisite to fuel cell separators. [MEANS FOR SOLVING PROBLEMS] A fuel cell separator material comprising a Ti substrate (2) and an alloy layer (6) formed on the surface of the substrate (2) which consists of both Au and the first component consisting of at least one noble metal that is selected from the group consisting of Ru, Rh, Pd, Ir, Os and Pt and that can be oxidized more easily than Au, wherein an interlayer which contains Ti, O, and the above first component and which has an Au content of less than 20% by mass is present between the alloy layer and the Ti substrate and a region of 1nm or above in thickness which spreads from the outermost surface toward the underlayer and which has an Au content of 50% by mass or above is present in the alloy layer or Au simple layer.
This invention provides a copper alloy, for an electronic component, formed of a Cu-Ni-P-base alloy which has good hot workability and, at the same time, can exhibit high strength, high electroconductivity, and high heat conductivity without sacrificing bendability. The copper alloy comprises, by mass, Ni: 0.50% to 1.00% and P: 0.10% to 0.25%. The content ratio of Ni to P is Ni/P = 4.0 to 5.5. The copper alloy further comprises Cr: 0.03% to 0.45% and O: not more than 0.0050%. The content of at least one of Fe, Co, Mn, Ti, and Zr is not more than 0.05%, preferably not more than 0.03%, in total. In the copper alloy, the balance consists of Cu and unavoidable impurities. Regarding the size of Ni-P-base second phase particles, not less than 80% of the area of the total second phase particles contained in the copper alloy is accounted for by second phase particles having an a value of not less than 20 nm and not more than 50 nm and an aspect ratio, a/b, of not less than 1 and not more than 5 wherein a represents a major axis and b represents a minor axis.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
41.
CU-NI-SI-CO-BASE COPPER ALLOY FOR ELECTRONIC MATERIAL AND PROCESS FOR PRODUCING THE COPPER ALLOY
This invention provides a Cu-Ni-Si-Co-base alloy possessing excellent strength, electroconductivity and press punchability. The Cu-Ni-Si-Co-base alloy is a copper alloy for an electronic material and comprises Ni: 1.0 to 2.5% by mass, Co: 0.5 to 2.5% by mass, and Si: 0.30 to 1.2% by mass with the balance consisting of Cu and unavoidable impurities. The observation of a cross section parallel to the rolling direction of the copper alloy, for a variation in composition and the area ratio of second phase particles having a diameter of not less than 0.1 &mgr;m and not more than 1 &mgr;m, shows that the middle value ρ (% by mass) of the amount of [Ni + Co + Si] is 20 (% by mass) ≤ ρ ≤ 60 (% by mass), the standard deviation σ(Ni + Co + Si) is σ(Ni + Co + Si) ≤ 30 (% by mass), and the area ratio S (%) is 1% ≤ S ≤ 10%.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
B21B 3/00 - Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
42.
METHOD FOR SUPPORTING METAL NANO PARTICLE, AND SUBSTRATE CARRYING METAL NANO PARTICLE
A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method.
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
B82B 3/00 - Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
43.
METHOD FOR PRODUCING SINTERED BODY, SINTERED BODY, SPUTTERING TARGET COMPOSED OF THE SINTERED BODY, AND SPUTTERING TARGET-BACKING PLATE ASSEMBLY
Disclosed is a method for producing a sintered body, which is characterized in that raw material powders respectively composed of a chalcogenide element and a Vb group element or raw material powders of an alloy of two or more elements including a chalcogenide element and a Vb group element are mixed, and the thus-mixed powder is hot pressed under the conditions satisfying the following formula: P (pressure) ≤ {Pf/(Tf-T0)} × (T-T0) + P0 (Pf: final pressure, Tf: final temperature, P0: atmospheric pressure, T: heating temperature, T0: room temperature (temperatures are expressed in degrees Celsius)). This method enables to produce a sintered body which has high density, high strength and large diameter, while containing a chalcogenide element (A) and a Vb group element (B) or containing the elements (A) and (B) and additionally a IVb group element (C) and/or an additive element (D). This sintered body does not suffer from cracks when assembled into and used in a sputtering target-backing plate assembly. Also disclosed are such a sintered body, a sputtering target composed of such a sintered body, and a sputtering target-backing plate assembly.
Disclosed is a plated material, on which an ultrafine wiring can be formed by electroless plating, which has a thin seed layer having a uniform thickness, and which can eliminate the complication of forming two layers (i.e., a barrier layer and a catalyst metal layer) prior to the formation of the seed layer. Also disclosed is a method for producing the plated material. Specifically disclosed is a plated material which comprises: a base; an alloy thin film formed on the base, wherein the alloy is made of a metal (A) having a catalytic activity for electroless plating and a metal (B) capable of displacement plating with a metal ion contained in an electroless plating solution; and a metal thin film formed on the alloy thin film by electroless displacement and reductive plating. The alloy thin film made of the metal (A) having the catalytic activity and the metal (B) capable of displacement plating contains the metal (A) in an amount of 5 to 40 at.% (inclusive). The metal thin film formed by electroless displacement and reductive plating has a thickness of 10 nm or less and a resistivity of 10 &mgr;Ω cm or less. Preferably, the metal (B) has a barrier function against a metal contained in the metal thin film.
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
45.
PLATED MATERIAL HAVING METAL THIN FILM FORMED BY ELECTROLESS PLATING, AND METHOD FOR PRODUCTION THEREOF
Disclosed is a plated material, on which an ultrafine wiring can be formed by electroless plating, which has a thin seed layer having a uniform thickness, and which can eliminate the complication of forming two layers (i.e., a barrier layer and a catalyst metal layer) prior to the formation of the seed layer. Also disclosed is a method for producing the plated material. Specifically disclosed is a plated material which comprises: a base; an alloy thin film formed on the base, wherein the alloy is made of a metal (A) having a catalytic activity for electroless plating and a metal (B) capable of displacement plating with a metal ion contained in an electroless plating solution; and a metal thin film formed on the alloy thin film by electroless displacement and reductive plating. The alloy thin film made of the metal (A) having the catalytic activity and the metal (B) capable of displacement plating contains the metal (A) in an amount of 5 to 40 at.% (inclusive). The metal thin film formed by electroless displacement and reductive plating has a thickness of 10 nm or less and a resistivity of 10 &mgr;Ω cm or less. Preferably, the metal (B) has a barrier function against a metal contained in the metal thin film.
C23C 18/32 - Coating with one of iron, cobalt or nickel; Coating with mixtures of phosphorus or boron with one of these metals
C23C 18/44 - Coating with noble metals using reducing agents
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
H01L 21/288 - Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
46.
LITHIUM-MANGANESE DOUBLE OXIDE FOR LITHIUM ION BATTERIES AND PROCESS FOR THE PRODUCTION OF THE DOUBLE OXIDE
The invention provides a lithium-manganese double oxide for lithium ion batteries which makes it possible to attain excellent high-temperature cycle characteristics and high-capacity battery characteristics. A spinel-type lithium-manganese double oxide for lithium ion batteries, which is represented by the general formula: Li1+xMn2-yMyO4 (wherein M is at least one element selected from among Al, Mg, Si, Ca, Ti, Cu, Ba, W and Pb and x and y satisfy the relationships: -0.1 ≤ x ≤ 0.2 and 0.06 ≤ y ≤ 0.3) and in which d10, d50 and d90 are 2 to 5騜m, 6 to 9騜m, and 12 to 15騜m respectively where d10, d50 and d90 refer to the particles sizes corresponding to the cumulative volumes of 10%, 50% and 90% respectively in the particle size distribution, the BET specific surface area exceeds 1.0m2/g and is 2.0m2/g or below, and the tap density is 0.5g/cm3 or above and below 1.0g/cm3.
H01M 4/50 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese
H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
47.
COMPOSITE OXIDE SINTER, PROCESS FOR PRODUCING AMORPHOUS COMPOSITE OXIDE FILM, AMORPHOUS COMPOSITE OXIDE FILM, PROCESS FOR PRODUCING CRYSTALLINE COMPOSITE OXIDE FILM, AND CRYSTALLINE COMPOSITE OXIDE FILM
An amorphous film which consists substantially of indium, tin, calcium, and oxygen, and has a tin content and a calcium content of 5-15% in terms of Sn/(In+Sn+Ca) atom number ratio and 0.1-2.0% in terms of Ca/(In+Sn+Ca) atom number ratio, respectively, with the remainder being indium and oxygen. It is characterized in that the film, upon annealing at 260°C or lower, crystallizes and comes to have a resistivity of 0.4 mΩ or lower. The ITO film is a thin ITO film for use in, e.g., a display electrode for flat panel displays. The amorphous ITO film is obtained by film deposition on a substrate by sputtering without heating the substrate and without water addition during the deposition. This ITO film has the property of crystallizing upon annealing at 260°C or lower, which is not so high, and thereby coming to have a lower resistivity than before the crystallization. Also provided are a process for producing the ITO film and a sinter for the film production.
C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
Provided is a sintered silicon wafer having a maximum crystal grain diameter of 20μm or less, an average crystal grain diameter of 1μm or more but not more than 10μm. The sintered silicon wafer has the following mechanical characteristics when a plurality of test samples taken from a silicon wafer having a diameter of 400mm or more are measured; an average deflecting strength of 20kgf/mm2 or more but not more than 50kgf/mm2 when measured by three-point bending method, an average tensile strength of 5kgf/mm2 or more but not more than 20kgf/mm2, and an average Vicker's hardness of Hv800 or more but not more than Hv1,200. The sintered wafer has a certain strength and mechanical properties similar to those of a single crystal silicon, even when it is a large disc-like sintered silicon wafer.
C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
Provided is a sintered silicon wafer characterized in that a ratio [formula (1): I(220)/I(111)], i.e., a ratio of the strength of a (220) phase to that of a (111) phase measured by x-ray diffraction, is 0.5 or more but not more than 0.8, and a ratio [formula (2): I(311)/I(111)], i.e., a ratio of the strength of a (311) phase to that of the (111) phase measured by x-ray diffraction is 0.3 or more but not more than 0.5. The sintered silicon wafer having a smooth surface has a surface roughness equivalent to that of a single crystal silicon.
Provided is a sintered silicon wafer wherein the volume ratio of a silicon oxide is 0.01% or more but not more than 0.2%, the volume ratio of a silicon carbide is 0.01% or more but not more than 0.15%, and the volume ratio of a metal silicide is less than 0.006%. The diameter of the sintered silicon wafer is 400mm or more. The sintered silicon wafer has the following mechanical characteristics (1-3), which are measured by taking a plurality of test samples from the sintered silicon wafer; (1) the average deflecting strength obtained by the three-point bending method is 20kgf/mm2-50kgf/mm2, (2) the average tensile strength is 5kgf/mm2-20kgf/mm2, and (3) the average Vickers hardness is Hv800-Hv1,200. Even a large disc-like sintered silicon wafer has a constant strength, and has characteristics similar to mechanical characteristics of a single crystal silicon.
An amorphous film characterized by consisting substantially of indium, tin, magnesium, and oxygen and having a tin content of 5-15% in terms of Sn/(In+Sn+Mg) atom number ratio and a magnesium content of 0.1-2.0% in terms of Mg/(In+Sn+Mg) atom number ratio, with the remainder being indium and oxygen. The film is further characterized by being crystallized by annealing the film at a temperature not higher than 260°C to come to have a resistivity of 0.4 mΩ or lower. An amorphous ITO film for use in producing an ITO thin film for use as, e.g., a display electrode in flat panel displays is obtained by film deposition by sputtering without heating the substrate and without the need of adding water during the film deposition. This amorphous ITO film has the property of being crystallized by annealing at 260°C or lower, which is not so high, and thereby coming to have a reduced resistivity. Also provided are: a process for producing the film; and a sinter for use in the film production.
C04B 35/00 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
A spherical copper fine powder characterized by having a mean particle diameter of 0.05 to 0.25μm; and a process for the production of spherical copper fine powder through disproportionation, characterized by adding copper suboxide to an aqueous medium containing an additive consisting of a natural resin, a polysaccharide, or a derivative thereof to prepare a slurry, adding a 5 to 50% aqueous solution of an acid to the slurry at once within 15 minutes, and then subjecting the resulting slurry to disproportionation. The process enables speedy, efficient and stable production of metallic copper particles controlled in particle shape or particle size, particularly copper fine powder having smaller particle sizes.
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 9/24 - Making metallic powder or suspensions thereof; Apparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
53.
TERAHERTZ BAND DEVICE ELEMENT AND METHOD FOR MANUFACTURING TERAHERTZ BAND DEVICE ELEMENT
It is possible to provide a terahertz band device element which can exhibit an excellent characteristic in a terahertz band device such as a terahertz wave generator and a terahertz wave detector. A method for manufacturing the terahertz band device is also provided. The terahertz band device element for generating or detecting a terahertz wave includes a ZnTe monocrystal plate having a crystal orientation (110), (111) or an orientation having the electro-optical effect, a thickness of 5 to 100 &mgr;m, and a surface roughness of 1 &mgr;m or below. Furthermore, the ZnTe monocrystal plate is bonded to a plate-shaped holding member having one or more openings so as to cover the openings, thereby configuring the terahertz band device element.
Disclosed is a method for producing a metal-coated polyimide resin substrate, which comprises: forming an electroless nickel-plated layer containing a component (B) on both surfaces or one surface of a polyimide resin film; and forming an electrically conductive film on the surface of the electroless nickel-plated layer by the electroless copper plating or the electro copper plating. The method is characterized as follows. Prior to the electroless nickel plating, a treatment of immersing the polyimide resin substrate in a solution comprising an alkali metal hydroxide to thereby render the polyimide resin substrate hydrophilic, a catalyst addition treatment, and a catalyst activation treatment are conducted. The process for forming the electroless nickel layer is divided into two steps. In the first step, an electroless nickel-plated layer having a larger thickness than that formed in the second step is formed, and the resulting layer is subjected to a heat treatment. In the second step, a procedure for forming an electroless nickel-plated layer is conducted again. The method enables to increase the adhesion after thermal aging (i.e., after allowing to left in the atmosphere at 150°C for 168 hours) without deteriorating the initial adhesion which is a measure of the adhesion force of a non-adhesive flexible laminate.
C23C 18/52 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, i.e. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
H05K 3/00 - Apparatus or processes for manufacturing printed circuits
H05K 3/38 - Improvement of the adhesion between the insulating substrate and the metal
55.
RESIN BLEEDING INHIBITOR AND METHOD OF PREVENTING RESIN BLEEDING
A resin bleeding inhibitor which is reduced in burden to be imposed on a wastewater treatment, exerts no adverse influence on die bonding strength and assembly properties even when applied to a die bonding resin of a low-stress type, and does not impair the effect of a discoloration-preventive treatment or pore-filling treatment. The resin bleeding inhibitor is characterized by containing a phosphoric ester represented by the following general formula. O=P(O-(R2-O)n-R1)m(OH)3-m (In the formula, R1 represents C4-30 (un)saturated hydrocarbon group; R2 represents lower alkylene; n is an integer of 0-10; and m is an integer of 1-3.)
H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
C09J 5/02 - Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
This invention provides an electrolytic copper foil for a lithium rechargeable battery, characterized by having a 0.2% proof stress of 18 to 25 Kg/mm2 and an elongation of not less than 10%. There is also provided a process for producing a copper foil for a lithium rechargeable battery, characterized in that a copper foil having a 0.2% proof stress of 18 to 25 Kg/mm2 and an elongation of not less than 10% is produced by annealing an electrolytic copper foil at a temperature in the range of 175 to 300ºC. The electrolytic copper foil has good proof stress and elongation against electrode breaking caused by charge/discharge of the lithium rechargeable battery, and is less likely to break.
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
Disclosed is a technique for stabilizing characteristics of an NdGaO3 substrate which is used for epitaxial growth and growing a good-quality nitride compound semiconductor single crystal with good reproducibility. Specifically, an NdGaO3 single crystal grown by a crystal pulling method is subjected to an annealing process in the atmosphere at a temperature not less than 1400˚C but not more than 1500˚C for a certain time (for example, for 10 hours), and this annealed NdGaO3 substrate is used as a substrate for epitaxial growth.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
58.
COPPER ELECTROLYTE SOLUTION AND TWO-LAYER FLEXIBLE SUBSTRATE OBTAINED BY USING THE SAME
Disclosed is a two-layer flexible substrate which is free from surface defects, while being excellent in flexural strength, etching characteristics and adhesion to a resist. Specifically disclosed is a copper electrolyte solution which is characterized by containing, as additives, a chloride ion, a sulfur organic compound and a polyethylene glycol. The copper electrolyte solution preferably contains 5-200 ppm of a chloride ion, 2-1000 ppm of a sulfur organic compound, and 5-1500 ppm of a polyethylene glycol. Also specifically disclosed is a two-layer flexible substrate wherein a copper layer is formed by using the copper electrolyte solution. This two-layer flexible substrate is characterized by having an MIT characteristic of 100 times or more, and a copper layer with a surface roughness (Rz) of 1.4-3.0 &mgr;m.
Disclosed is a substrate for epitaxial growth, which enables to obtain an epitaxial layer having uniform PL characteristics when the epitaxial layer is grown on a group III-V compound semiconductor substrate such as an InP substrate. Also disclosed is an epitaxial growth process. Specifically, during a process wherein an epitaxial layer composed of a compound semiconductor such as an InGaAsP layer is vapor deposited on a group III-V semiconductor substrate such as an InP substrate, the preset temperature is adequately controlled by taking it into consideration that the substrate temperature (growth temperature) changes due to the size (major axis) of an elliptical etch pit on the backside of the substrate.
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01S 5/323 - Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
Disclosed is a Corson alloy having dramatically improved properties (e.g., high strength and high conductivity) which are achieved by allowing the effect of the addition of Cr to a Cu-Ni-Si-based alloy to exhibit more effectively. Specifically disclosed is a copper alloy for an electronic material, which comprises 1.0 to 4.5 mass% of Ni, 0.50 to 1.2 mass% of Si, 0.0030 to 0.3 mass% of Cr (provided that the weight-based ratio of Ni to Si (i.e., a Ni/Si ratio) by weight is as follows: 3 ≤ Ni/Si ≤ 5.5), with the remainder being Cu and unavoidable impurities. In the copper alloy, a Cr-Si compound having a size of 0.1 to 5 騜m (inclusive) is dispersed in the material at a dispersion density of 1 × 106 particles/mm2 or less, wherein the atom-based ratio of the concentration of Cr to that of Si in the dispersed particle is 1 to 5.
C22C 9/01 - Alloys based on copper with aluminium as the next major constituent
C22C 9/02 - Alloys based on copper with tin as the next major constituent
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22C 9/05 - Alloys based on copper with manganese as the next major constituent
C22C 9/10 - Alloys based on copper with silicon as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
H01B 5/02 - Single bars, rods, wires or strips; Bus-bars
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/02 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
61.
CU-NI-SI-CO-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL, AND METHOD FOR PRODUCTION THEREOF
Disclosed is a Cu-Ni-Si-Co-based alloy reduced in the production of a coarse second phase particle. In the process for producing a Cu-Ni-Si-Co-based alloy; (1) the hot rolling is carried out after heating at 950 to 1050˚C for 1 hour or longer, and the hot rolling termination temperature is fixed at 850˚C or higher, and the cooling is carried out at a rate of 15˚C/s or more; and (2) the solution treatment is carried out at 850 to 1050˚C, and the cooling is carried out at a rate of 15˚C/s or more. Specifically disclosed is a copper alloy for an electronic material, which comprises 1.0 to 2.5 mass% of Ni, 0.5 to 2.5 mass% of Co and 0.30 to 1.20 mass% of Si, with the remainder being Cu and unavoidable impurities. The copper alloy contains no second phase particle having a particle diameter greater than 10 騜m, and contains a second phase particle having a particle diameter of 5 to 10 騜m at a density of 50 particles/mm2 or less in a cross-section parallel to the rolling direction.
C22C 9/01 - Alloys based on copper with aluminium as the next major constituent
C22C 9/02 - Alloys based on copper with tin as the next major constituent
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22C 9/05 - Alloys based on copper with manganese as the next major constituent
C22C 9/10 - Alloys based on copper with silicon as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
H01B 5/02 - Single bars, rods, wires or strips; Bus-bars
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
62.
METHOD OF RECOVERING VALUABLE METAL FROM SCRAP CONTAINING CONDUCTIVE OXIDE
A method of recovering a valuable metal from an oxide-based scrap, characterized by using an insoluble electrode as an anode, using the oxide-based scrap as a cathode, and conducting electrolysis to recover the cathode scrap in the form of metal or suboxide. Thus, a valuable metal is efficiently recovered from an oxide-based scrap, e.g., a sputtering target made of indium-tin oxide (ITO) or fragments resulting from production.
Disclosed is a non-adhesive-type flexible laminate comprising a polyimide film with at least one surface thereof being plasma-treated, a tie coat layer formed on the plasma-treated surface of the polyimide film and a conductive metal layer formed on the tie coat layer, wherein the ratio of the thickness (T) of the tie coat layer to the ten-point average roughness (Rz) of the plasma-treated surface of the polyimide film (i.e., the T/Rz ratio) is 2 or greater. The object is to improve the initial adhesion force which is a measure of the adhesion force and also improve the adhesion force after heat aging (i.e., after being allowed to stand in the air at 150˚C for 168 hours in the air) in a non-adhesive-type flexible laminate (particularly a dual-layered flexible laminate).
H01B 5/14 - Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
An Sn-plated copper alloy material comprising, by mass, 2 to 12% Zn, 0.1 to 1.0% Sn, optionally 0.005 to 0.5%, in total, at least one member selected from among Ni, Mg, Fe, P, Mn, Co, Be, Ti, Cr, Zr, Al and Ag, and the balance copper and unavoidable impurities. The Sn-plated copper alloy material has a thermal conductivity of 150 to 260 W/(m•K) and a micro Vickers hardness of 120 to 215 and has its surface covered with a pure Sn phase of 0.1 to 2.0 &mgr;m average thickness. Further, there is disclosed a printed board terminal being a pin-shaped member of 0.2 to 1.0 mm in thickness (t) of its part mounted on the board and 0.9t to 2.0tmm in width (w) of its part mounted on the board obtained by press working of the above alloy material so that the base material of the copper alloy material is exposed at a press fractured surface, thereby excelling in solder mountability. Thus, there is provided an Sn-plated copper alloy material that even when plating is performed prior to press working, excellent mountability is attained, and provided a printed board terminal obtained by working of the material.
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
A terahertz electromagnetic wave detector which can avoid deterioration in detection sensitivity of terahertz electromagnetic wave resulting from a defect (especially, a slip line along a (111) face) occurring in a ZnTe substrate as an electrooptical element, and can enhance precision of a measuring image utilizing a terahertz electromagnetic wave. The terahertz electromagnetic wave detector comprises a terahertz electromagnetic wave irradiation means for irradiating a terahertz electromagnetic wave, a probe light irradiation means for irradiating probe light, an electrooptical element for receiving the terahertz electromagnetic wave from the terahertz electromagnetic wave irradiation means and the probe light from the probe light irradiation means, and a probe light detecting means for detecting the probe light (intensity) passed through the electrooptical element. A ZnTe single crystal substrate off-angled by 10-45° in the direction from a {110} face to a {001} face is employed as the electrooptical element.
G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
G01N 21/3586 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
66.
METHODS OF RECOVERING VALUABLE METAL FROM SCRAP CONTAINING ELECTRICALLY CONDUCTIVE OXIDE
A method of recovering a valuable metal from scraps containing an electrically conductive oxide, characterized by using scraps containing an electrically conductive oxide and subjecting the scraps to electrolysis while periodically reversing the polarity to thereby recover the metal as a hydroxide. The method of recovering a valuable metal from scraps containing an electrically conductive oxide may be characterized in that the oxide-containing scraps are a substance which is an electrically conductive oxide and can be reduced with hydrogen into a metal or suboxide. Also provided is a method of efficiently recovering a valuable metal from either sputtering-target scraps containing an electrically conductive oxide or scraps generated during production, such as chips of an electrically conductive oxide.
This invention provides a process for producing a compound semiconductor single crystal, which is a technique applicable to crystal growth utilizing an LEC method and can produce a large-size ZnTe-base compound semiconductor single crystal at a high yield, and a crystal growing apparatus. The production process is a process for producing a compound semiconductor single crystal by a liquid sealing Czochralski method, comprising placing a semiconductor material and a sealing agent in a material melt storage part comprising a closed end cylindrical first crucible and a second crucible, which is disposed on the inner side of the first crucible and has a hole for communication with the first crucible at its bottom, heating the material storage part to melt the material, bringing a seed crystal into contact with the material melt surface in this state, and allowing a crystal to grow while pulling up the seed crystal. In this process, the crystal is grown while rotating the first crucible and the second crucible in the circumferential direction at a predetermined rotation speed.
A method of recovering a valuable metal from ITO scrap, characterized in that electrolysis under periodic inversion of polarity is carried out with the use of an insoluble electrode as either an anode or a cathode and with the use of a scrap containing a conductive oxide as the opposite cathode or anode employed as the electrode counter thereto to thereby attain recovery of the scrap as a hydroxide. Further, there is provided a method of recovering a valuable metal from a scrap containing a conductive oxide, characterized in that the oxide scrap is a conductive oxide being a substance reducible by hydrogen to a metal or suboxide. By the method, a valuable metal can be efficiently recovered from scraps containing a conductive oxide, such as a sputtering target containing a conductive oxide and target end materials occurring in production process.
C25B 1/00 - Electrolytic production of inorganic compounds or non-metals
C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
69.
TARGET FORMED OF SINTERING-RESISTANT MATERIAL OF HIGH-MELTING POINT METAL ALLOY, HIGH-MELTING POINT METAL SILICIDE, HIGH-MELTING POINT METAL CARBIDE, HIGH-MELTING POINT METAL NITRIDE, OR HIGH-MELTING POINT METAL BORIDE, PROCESS FOR PRODUCING THE TARGET, ASSEMBLY OF THE SPUTTERING TARGET-BACKING PLATE, AND PROCESS FOR PRODUC
This invention provides a target formed of a sintering-resistant material of a high-melting point metal alloy, a high-melting point metal silicide, a high-melting point metal carbide, a high-melting point metal nitride, or a high-melting point metal boride, characterized by having a structure comprising a target material formed of a sintering-resistant material of a high-melting point metal alloy, a high-melting point metal silicide, a high-melting point metal carbide, a high-melting point metal nitride, or a high-melting point metal boride and a high-melting point metal plate other than the target material joined to each other, and a process for producing the target. In the target and the production process of the target, a target formed of a sintering-resistant material of a high-melting point metal alloy, a high-melting point metal silicide, a high-melting point metal carbide, a high-melting point metal nitride, or a high-melting point metal boride, which has poor machinability, can relatively easily be produced. Further, the occurrence of cracking in the target production and high power sputtering can be effectively suppressed. Furthermore, a reaction of the material for a target with a die in hot pressing can be suppressed, and the warpage of the target can be reduced.
A roll unit for use in a surface treatment of copper foil, comprising an axial sleeve fitted to a shaft of roll so as to realize, via the axial sleeve, rotatable support to bearing. In particular, in the roll unit, the axial sleeve consists of two sleeves, the one being a roll-side sleeve disposed on the side of roll main body while the other being a taper sleeve disposed on the side of an axial end, and not only is an oil seal disposed between the roll-side sleeve and a bearing housing but also the taper sleeve is supported by a bearing disposed in the bearing housing. Thus, there is realized a roll unit for use in the continuous execution of electrochemical surface treatments, such as roughening, rustproof and oxidizing surface treatments, on the surface of a rolled copper foil or electrolytic copper foil, especially a roll unit that not only inhibits any abrasion or corrosion of roll shaft of the roll unit and bearing but also ensures easy replacement of bearing housing, bearing and other parts.
A roll unit to be dipped in a surface treatment liquid for copper foil, characterized in that the roll unit has a bearing housing for accommodation of roll shaft consisting of two separable bearing housings, the one of these bearing housings being a roll-side bearing housing disposed on the side of roll main body while the other being an axial-end-side bearing housing disposed on the side of a roll axial end, and that the roll-side bearing housing in its interior is provided with an axial sleeve covering the outer circumference of the roll shaft and an oil seal superimposed on the outer circumference of the axial sleeve, and that the axial-end-side bearing housing is provided with a bearing supporting the rotation of the shaft. Thus, there is realized a roll unit for use in an apparatus for continuously carrying out electrochemical surface treatments, such as roughening, rustproof and oxidizing surface treatments, on the surface of a rolled copper foil or electrolytic copper foil, especially a roll unit that not only inhibits any corrosion of roll unit dipped in a surface treatment liquid by penetration of the treatment liquid to thereby inhibit any abrasion or corrosion of roll shaft and bearing but also ensures easy replacement of bearing housing, bearing and other parts.
A bilayer copper clad laminate having a copper layer provided on a polyimide film by sputtering and plating, characterized by exhibiting the behaviors of shrinking at MD of the copper clad laminate and elongating at TD of the copper clad laminate and by being 20 mm of less in a warpage of laminate. Provided that the warpage is an extent of lift of the bilayer copper clad laminate of 100 mm square exhibited after humidity conditioning at 23°C in 50% humidity for 72 hr. Thus, with respect to a bilayer CCL material having a copper layer provided on a polyimide film by sputtering and plating, there is provided a bilayer CCL material exhibiting a reduced warpage of the laminate and provided a process for producing the same.
B32B 15/088 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyamides
An iron/copper composite powder for powder metallurgy comprising a copper-coated iron powder as a major component. The composite powder comprises a copper-coated iron powder or a powder mixture of a copper-coated iron powder and an electrolytic copper powder, and is characterized by having a copper content of 45-70 wt.%, apparent density of 2.2 g/cm3 or higher, and fluidity of 25 s/50 g or lower. Also provided is a process for producing an iron/copper composite powder for powder metallurgy comprising a copper-coated iron powder as a major component, characterized by plating an iron powder with copper, sintering this copper-coated iron powder alone having a copper content of 45-70 wt.% or a mixture prepared by mixing the copper-coated iron powder with an electrolytic copper powder so as to result in a copper content of 45-70 wt.%, and pulverizing the sinter. By the process for producing a raw powder for powder metallurgy which comprises copper-coated iron as a major component and is for use in producing, e.g., a sintered oil-impregnated bearing, a raw sintering powder is obtained which is improved in flowability and apparent density and in sinter properties including ring compression strength. A cost reduction is also attained.
B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
SILVER-PLATED FINE COPPER POWDER, CONDUCTIVE PASTE PRODUCED FROM SILVER-PLATED FINE COPPER POWDER, AND PROCESS FOR PRODUCING SILVER-PLATED FINE COPPER POWDER
A process for producing a silver-plated fine copper powder characterized by treating a fine copper powder with an alkaline solution to remove organic substances present on the surface of the fine copper powder, washing the powder with water, washing an oxide present on the surface of the fine copper powder with an acidic solution, washing the powder with water, subsequently adding a reducing agent to an acidic solution containing this fine copper powder dispersed therein to produce a slurry of the fine copper powder, regulating the pH of the slurry, and then continuously adding to this fine-copper-powder slurry a solution of silver ions complexed with a chelating agent to thereby form a silver layer on the surface of the fine copper powder by electroless displacement plating and reductive plating. This process eliminates problems in conventional silver-plated fine copper powders, e.g., that the fine copper powders obtained through silver plating reaction differ in color tone according to the oxidized state thereof before silver plating and that the silver plating causes a decrease in tap density. The silver-plated fine copper powder is excellent in electrical conductivity and reproducibility in silver plating reaction and has almost the same tap density as the raw fine copper powder.
B22F 1/02 - Special treatment of metallic powder, e.g. to facilitate working, to improve properties; Metallic powders per se, e.g. mixtures of particles of different composition comprising coating of the powder
B22F 1/00 - Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
C23C 18/44 - Coating with noble metals using reducing agents
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 5/00 - Non-insulated conductors or conductive bodies characterised by their form
75.
METHOD FOR COLLECTION OF VALUABLE METAL FROM ITO SCRAP
A method for collecting a valuable metal from an indium-tin oxide (ITO) scrap, characterized by collecting metal indium by the electrolysis of the ITO scrap; a method comprising conducting the electrolysis of the ITO scrap in an electrolytic bath partitioned by a septum or an ion exchange membrane, removing an anolyte temporarily, removing tin from the anolyte by a neutralization technique or a substitution technique, placing a solution produced by the removal of tin into the cathode side again, conducting the electrolysis of the solution, and collecting metal indium selectively; or a method for collecting a valuable metal from an ITO scrap, comprising preparing a solution containing In and Sn in an ITO-electrolyzing bath, removing Sn from the solution, and collecting In in the collecting bath. It becomes possible to provide a method for collecting metal indium at high efficiency from an ITO sputtering target or an ITO scrap (e.g., a ITO waste) produced during the production of the ITO sputtering target.
Disclosed is a method for collecting a valuable metal from an indium-tin oxide (ITO) scrap, characterized by conducting the electrolysis of the ITO scrap in an pH-adjusted electrolyte solution to collect indium or tin in the form of an oxide. Also disclosed is a method for collecting a valuable metal from an ITO scrap, which comprises conducting the electrolysis of the ITO scrap in an electrolytic bath partitioned by a septum or an ion exchange membrane to precipitate tin hydroxide, removing an anolyte temporarily, causing the precipitation of indium contained in the anolyte in the form of a hydroxide, and collecting the hydroxide. In these methods, indium or tin may be collected in the form of an oxide by roasting the precipitate containing indium or tin. It becomes possible to provide a method for collecting indium at high efficiency from an ITO sputtering target or an ITO scrap (e.g., a ITO waste) produced during the production of the ITO sputtering target.
Disclosed is a method for collecting a valuable metal from an indium-tin oxide (ITO) scrap, characterized by collecting tin by the electrolysis of the ITO scrap. Also disclosed is a method for collecting a valuable metal from an ITO scrap, characterized by providing an ITO-electrolyzing bath and a tin-collecting bath, dissolving the ITO scrap in the electrolyzing bath, and collecting tin in the collecting bath. Further disclosed is a method for collecting a valuable metal from an ITO scrap, characterized by conducting the electrolysis of the ITO scrap in an electrolyte solution by using the ITO scrap as an anode to dissolve the ITO scrap, causing the precipitation of only tin in the solution in the form of metal tin or a tin-containing substance, removing the precipitation product and placed it in a collection bath where the precipitation product is dissolved again to provide a solution of tin hydroxide, and conducting the electrolysis or neutralization of the solution to collect tin. It becomes possible to provide a method for collecting tin at high efficiency from an ITO sputtering target or an ITO scrap (e.g., a ITO waste) produced during the production of the ITO sputtering target.
Disclosed is a method for collecting a valuable metal from an indium-tin oxide (ITO) scrap, characterized by conducting the electrolysis of the ITO scrap in an pH-adjusted electrolyte solution to collect a mixture of indium hydroxide and tin hydroxide or metastannic acid and, if required, roasting the mixture to collect a mixture of indium oxide and tin oxide. It becomes possible to provide a method for collecting indium hydroxide and tin hydroxide or metastannic acid or indium oxide and tin oxide at high efficiency from an ITO sputtering target or an ITO scrap (e.g., a ITO waste) produced during the production of the ITO sputtering target.
Disclosed is a method for collecting a valuable metal from an indium-tin oxide (ITO) scrap, characterized by collecting an indium-tin alloy by the electrolysis of the ITO scrap. Also disclosed is a method for collecting a valuable metal from an ITO scrap, characterized by providing an ITO-electrolyzing bath and an indium-tin alloy-collecting bath, dissolving ITO in the electrolyzing bath, and collecting the indium-tin alloy in the collecting bath. It becomes possible to provide a method for collecting an indium-tin alloy at high efficiency from an ITO sputtering target or an ITO scrap (e.g., a ITO waste) produced during the production of the ITO sputtering target.
A rolled copper foil excellent in bending resistance is characterized in that a texture having a bent slip band is formed by 50% or more on the surface of the rolled copper foil. The rolled copper foil excellent in bending resistance is characterized in that a texture has an average crystal particle size exceeding 20 &mgr;m and satisfies a relation I(200)/Io(200)>40, where I(200) is the integration strength of (200) face determined by X ray diffraction on the rolled surface of the rolled copper foil after recrytallization annealing, and Io(200) is the integration strength of (200) face of fine powder copper determined by X ray diffraction. In particular, a rolled copper foil for flexible printed wiring board (FPC) excellent in bending resistance is provided.
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H05K 1/09 - Use of materials for the metallic pattern
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
An antimony-tellurium base alloy sinter sputtering target comprising antimony and tellurium as major components, characterized in that it has a structure comprising antimony-tellurium base alloy particles and fine carbon or boron particles with which the alloy particles are surrounded, and that when the average diameter of the antimony-tellurium base alloy particles and the particle diameter of the carbon or boron are expressed by X and Y, respectively, then Y/X is in the range of from 1/10 to 1/10,000. The antimony-tellurium base alloy sinter sputtering target has the improved structure, is inhibited from cracking, and prevents arcing from occurring during sputtering.
Disclosed is a copper alloy for an electronic material, which has a satisfactory balance among strength, electric conductivity and bending workability to be used as a material for a terminal, a connector, a switch or a relay. Specifically disclosed is a copper alloy for an electronic material, which comprises 1.00 to 2.50 mass% of Co and 0.20 to 0.70 mass% of Si, with the remainder being Cu and unavoidable impurities, and which has a mass-based concentration ratio between Co and Si (a Co/Si ratio) satisfying the following formula: 3.5≤Co/Si≤5 and an electric conductivity of 55% IACS or greater, preferably 60% IACS or greater. Preferably, the copper alloy may contain Cr in an amount of 0.05 to 0.50 mass%, have a content of carbon (an unavoidable impurity) of 50 ppm or less, and further contain at least one element selected form Mg, P, As, Sb, Be, B, Mn, Sn, Ti, Zr, Al, Fe, Zn and Ag in an amount of 0.001 to 0.300 mass%. Also disclosed is a method for producing the alloy, which comprises the steps of conducting melting/casting and subsequently conducting hot rolling and cold rolling, wherein a thermal treatment for heating to 700 to 1050˚C and then cooling at a rate of 10˚C/sec. is conducted prior to the final cold rolling procedure.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
H01R 13/03 - Contact members characterised by the material, e.g. plating or coating materials
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
83.
Cu-Mn ALLOY SPUTTERING TARGET AND SEMICONDUCTOR WIRING
This invention provides a Cu-Mn alloy sputtering target characterized by comprising 0.05 to 20% by weight of Mn and not more than 500 ppm by weight in total of Be, B, Mg, Al, Si, Ca, Ba, La, and Ce with the balance consisting of Cu and unavoidable impurities. There is also provided a copper alloy wiring for a semiconductor, wherein a self-diffusion suppression function can be imparted to the copper alloy wiring for a semiconductor per se to effectively prevent contamination of a part around the wiring by the diffusion of active Cu. Further, in the copper alloy wiring for a semiconductor, for example, electromigration (EM) resistance and corrosion resistance have been improved, a barrier layer can be arbitrarily and easily formed, and, further, the film forming step of a copper alloy wiring for a semiconductor can be simplified. A sputtering target for the formation of the wiring, and a method for forming a copper alloy wiring for a semiconductor are also provided.
A metastable austenitic stainless steel strip excelling in fatigue property that finds appropriate application in parts requiring repeated resilience, such as parts for use in switch portions of various electronic equipments, finding especially appropriate application in metal dome parts for switch. There is provided a process for producing a metastable austenitic stainless steel strip of 1200 MPa or greater tensile strength excelling in fatigue property, comprising performing a final cold rolling of material with an average crystal grain diameter of 5.0 騜m or less so as to attain a martensite content in product thickness of 90% or below. Preferably, there is provided a process comprising sequentially performing cold rolling of material with an average crystal grain diameter of 5.0 騜m or less, recrystallization-annealing aiming at an average crystal grain diameter of 5.0 騜m or less and final cold rolling. Further, there are provided a metastable austenitic stainless steel strip obtained by these processes and a metal dome part for switch consisting of the stainless steel strip.
A Cu-Ni-Si alloy for electronic material that with the addition of other alloy elements minimized, simultaneously exhibits enhanced electric conductivity, strength, flexure and stress relaxation performance. There is provided a Cu-Ni-Si alloy comprising 1.2 to 3.5 mass% Ni, Si in a concentration (mass%) of 1/6 to 1/4 of the Ni concentration (mass%) and the balance Cu and impurities whose total amount is 0.05 mass% or less, the Cu-Ni-Si alloy having its configuration of crystal grains and width of nonprecipitation zone regulated so as to fall within appropriate ranges through controlling of solution treatment conditions, aging treatment conditions and degree of roll working. Thus, there can be provided a copper alloy strip of 55 to 62% IACS electric conductivity and 550 to 700 MPa tensile strength, being free from cracking at 180° contact bending and exhibiting a stress relaxation ratio, as measured upon heating at 150°C for 1000 hr, of 30% or below.
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01L 23/50 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements for integrated circuit devices
86.
PROCESS FOR PRODUCING GaN SINGLE-CRYSTAL, GaN THIN-FILM TEMPLATE SUBSTRATE AND GaN SINGLE-CRYSTAL GROWING APPARATUS
A process for producing a GaN single-crystal, in which even when use is made of a hydride vapor phase growing technique, the thickness of GaN single-crystal film can be controlled accurately; a GaN thin-film template substrate suitable for growth of a GaN thick film with good properties; and a relevant GaN single-crystal growing apparatus. There is provided a process for producing a GaN single-crystal according to a hydride vapor phase growing technique involving reacting GaCl (gallium chloride) formed by blowing HCl (hydrogen chloride) onto Ga (gallium) melted by heating at given temperature with NH3 (ammonia) gas being a hydride gas on a substrate to thereby form a GaN thin-film, which process comprises supplying the NH3 gas through a nozzle to the vicinity of the substrate (for example, position apart from the substrate by 0.7 to 4.0 times the diameter of the substrate). Further, a substrate of NGO(011) with lattice constants close to those of GaN is used as the substrate.
C30B 25/14 - Feed and outlet means for the gases; Modifying the flow of the reactive gases
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
87.
ZINC OXIDE BASED TRANSPARENT ELECTRIC CONDUCTOR, SPUTTERING TARGET FOR FORMING OF THE CONDUCTOR AND PROCESS FOR PRODUCING THE TARGET
A zinc oxide based transparent electric conductor composed mainly of zinc oxide (ZnO) and containing an element being an n-type dopant for the zinc oxide, characterized in that a metal whose parameter P indicating a wetting characteristic with zinc oxide (P=(G+Hmix)/RT, wherein G is the Gibbs free energy of the metal at temperature T; Hmix is the mixing enthalpy of zinc oxide and metal at temperature T; R is gas constant, and T is temperature) is 6 or below, the metal exhibiting a resistivity lower than that of the zinc oxide loaded with the n-type dopant, is contained in an amount of 0.05 to 2.0 atom.% based on all the metal atoms. In the development of transparent electric conductor not having raw material indium (In) that is expensive and feared for resource depletion, crossing the bounds of the conventional development technique according to single doping method, it is intended to indicate the preference guideline for secondary additive material effective for conversion to low resistivity and further the particular type of material and the range of appropriate concentration and to accordingly provide a transparent electric conductor with low resistivity.
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
C04B 35/453 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
A semiconductor substrate for epitaxial growth that does not need any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe compound semiconductor substrate for epitaxial growth of HgCdTe film, within a given period of time (for example, 10 hours) after mirror finish treatment thereof, is accommodated in an inert gas atmosphere to thereby regulate the ratio of Te oxide based on the total amount of Te in the substrate surface as determined by XPS measurement so as to be 30% or below.
A lithium-containing transition metal oxide target consisting of a sintered body of lithium-containing transition metal oxide whose crystal system is a hexagonal system, the sintered body having a relative density of 90% or higher and an average crystal grain diameter of 1 to 50 &mgr;m; and a lithium-containing transition metal oxide target consisting of a sintered body of lithium-containing transition metal oxide whose crystal system is a hexagonal system, wherein (003) face, (101) face and (104) face intensity ratios obtained by X-ray diffractometry using CuKα rays satisfy the relationships (1) the peak ratio of (101) face to (003) face is in the range of 0.4 to 1.1 and (2) the peak ratio of (101) face to (104) face is 1.0 or higher. There is provided a lithium-containing transition metal oxide target that is most suitable for forming of a thin-film positive electrode for use in a thin-film battery, such as three-dimensional battery or totally solid battery. Further, there are provided a process for producing the same and a relevant lithium ion thin-film secondary battery. It is especially intended to obtain a positive electrode material target that enables obtaining of a thin film excelling in homogeneity.
H01M 4/58 - Selection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
A sputtering target/copper-zinc alloy backing plate conjunction assembly element characterized by having a structure such that pure copper is embedded in the backing plate position at the central part of the target. A simple structure of sputtering target/backing plate capable of satisfactorily coping with realization of higher power can be provided from an inexpensive copper-zinc alloy backing plate excelling in strength and eddy current resistance characteristics without detriment to its properties.
A Cu-Zn copper alloy which is for use in electronic parts such as terminals and connectors and has high strength and excellent bendability. The Cu-Zn alloy having high strength and excellent bendability comprises 20-40 mass% Zn and, as the remainder, Cu and unavoidable impurities, and has such crystal grain characteristics that the average crystal grain diameter (mGS) is 1-4 쎽m and the standard deviation (σGS) of the crystal grain diameters is 1/3 mGS or less. In the alloy, the relationship {I(220)+I(111)}/I(200) between X-ray diffraction intensities in an examination of a rolled plane is 2.0-5.0. The Cu-Zn alloy may further contain any one or more of Ni, Si, Fe, Ti, Co, and Sn in an amount of 0.01-0.3 mass%. The alloy preferably has a sulfur content of 30 ppm or lower and has a surface roughness (Ra) of 0.2 쎽m or lower.
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
92.
ROLLED COPPER OR COPPER ALLOY FOIL WITH ROUGHENED SURFACE AND METHOD OF ROUGHENING ROLLED COPPER OR COPPER ALLOY FOIL
A rolled copper or copper alloy foil having a roughened surface comprising fine copper particles, characterized by being obtained by subjecting a rolled copper or copper alloy foil to roughening plating with a plating bath containing copper sulfate (1-50 g/L in terms of Cu amount), 1-150 g/L sulfuric acid, and one or more additives selected among sodium octyl sulfate, sodium decyl sulfate, and sodium dodecyl sulfate under the conditions of a temperature of 20-50°C and a current density of 10-100 A/dm2. The rolled copper or copper alloy foil roughened is reduced in craters, which are a conspicuous defect characteristic of rolled copper or copper alloy foils having a roughened surface. Also provided is a rolled copper or copper alloy foil which has a high strength, strength of adhesion to resin layers, acid resistance, and resistance to tin plating solutions. It further has a high peel strength and is satisfactory in suitability for etching and gloss. It is suitable for use in producing a flexible printed wiring board bearing a fine wiring pattern. Furthermore provided is a method of roughening the foil.
A zirconium crucible for analytical sample melting for use in pretreatment of analytical sample, characterized in that the zirconium crucible has a purity of 99.99 wt.% or higher. In view of the recent analytical technology demanding rapid and accurate measurement of high-purity material, there are provided a zirconium crucible for analytical sample melting, method of preparing an analytical sample and method of analysis, which enable inhibiting of mixing of impurities from the crucible and attaining of high-purity analysis without dependence upon difference in analysts and their skill.
Disclosed is a Cu-Zn alloy strip which is improved in thermal separation resistance for Sn plating. Also disclosed is such a Cu-Zn alloy strip plated with Sn. Specifically disclosed is a Cu-Zn alloy strip consisting of 15-40% by mass of Zn and the balance of Cu and unavoidable impurities, wherein the total concentration of P, As, Sb and Bi is controlled to be 100 ppm by mass or less, the total concentration of Ca and Mg is controlled to be 100 ppm by mass or less, and the concentrations of O and S are respectively controlled to be 30 ppm by mass or less.
C22C 9/04 - Alloys based on copper with zinc as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 5/50 - After-treatment of electroplated surfaces by heat-treatment
C25D 7/00 - Electroplating characterised by the article coated
H01B 5/02 - Single bars, rods, wires or strips; Bus-bars
C22F 1/00 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
95.
HEAT-RESISTANT Sn-PLATED Cu-Zn ALLOY STRIP SUPPRESSED IN WHISKERING
An Sn-plated strip which is composed of a basis material consisting of a copper alloy containing Zn in an average concentration of 15 to 40% by mass and a plated coating constituted of an Sn phase layer, an Sn-Cu alloy phase layer and an Ni phase layer present in this order from the surface to the basis material, wherein the Zn concentration of the surface of the Sn phase layer is adjusted to 0.1 to 5.0% by mass. The basis material can contain one or more arbitrary components selected from among Sn, Ag, Pb, Fe, Ni, Mn, Si, Al and Ti in a total amount of 0.005 to 3.0% by mass, while the basis material may be a copper-base alloy which consists of 15-40% by mass Zn, 8 to 20% by mass Ni, 0 to 0.5% by mass Mn, and the balance Cu with unavoidable impurities and which may further contain one or more of the above arbitrary components in a total amount of 0.005 to 10% by mass. Thus, the invention provides a reflow Sn-plated Cu-Zn alloy strip which has a Cu/Ni double undercoat and is suppressed in whiskering.
Disclosed is a tin-plated strip wherein a copper-base alloy composed of 1.0-4.5% by mass of Ni, 0.2-1.0% by mass of Si and the balance of Cu and unavoidable impurities is used as the base metal. In this tin-plated strip, the concentration of S and the concentration of C in the interface between the base metal and the plating layer are adjusted to be 0.05% by mass or less. The base metal may further contain at least one element selected from the group consisting of Sn, Zn, Mg, Fe, Mn, Co, Ti, Cr, Zr, Al and Ag in an amount of 0.005-3.0% by mass in total. This tin-plated Cu-Ni-Si alloy strip is improved in resistance to heat separation of the tin plating.
A zinc oxide-based transparent conductor characterized by comprising zinc oxide as the main ingredient, containing 1-10 at.% element which has a smaller ionic radius than the zinc in the zinc oxide and serves as an n-type dopant for zinc oxide, and containing nitrogen in an amount of 0.3-0.6 in terms of the ratio of the number of nitrogen atoms to that of atoms of the n-type dopant (nitrogen/n-type dopant). In developing a transparent conductor not containing indium, which is an expensive raw material and the resource depletion of which is feared, the limit of the conventional development technique of the single-dopant method is exceeded. A guide to dopant selection as a specific means for realizing the co-doping theory is indicated. A transparent conductor having a low resistivity is provided.
C04B 35/453 - Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
H01B 5/14 - Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
98.
METHOD FOR DETERMINING MACHINING PLANE OF PLANAR MATERIAL, MACHINING METHOD AND DEVICE FOR DETERMINING MACHINING PLANE AND FLAT SURFACE MACHINING DEVICE
A surface machining method for performing mechanical machining, such as cutting, grinding and electric discharge machining, on a planar material to have a uniform thickness, characterized in that the planar material is mounted on a surface plate, coordinate axes X and Y are set in the plane directions of the planar material, coordinate axis Z is set in the height direction, an XY plane, including the origin in the Z direction measured as a distance (height) Zm,n from the coordinate (Xm, Yn) of a virtual plane ABCD to the plate thickness central plane (S) consisting of the middle point of a line connecting the upper and lower surfaces of the planar material as an object to be measured is assumed, the distance (height) in the Z direction of the plate thickness central plane of the planar material from the origin at an arbitrary XY plane position is measured, and the planar material is cut while being inclined so as to minimize the difference between maximum and minimum values of height data thus obtained. A flat planar material having a uniform thickness is obtained from a planar material having two-or three-dimensional deformation and/or variation in plate thickness, and a method and a device for determining the machining surface of the planar material when surface machining, such as cutting, grinding and electric discharge machining, is performed in order to obtain a flat planar material having a uniform thickness at a lowest machining cost are provided.
G05B 19/4093 - Numerical control (NC), i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by part programming, e.g. entry of geometrical information as taken from a technical drawing, combining this with machining and material information to obtain control information, named part programme, for the NC machine
99.
METAL-COATED LIPID BIMOLECULAR MEMBRANE ENDOPLASMIC RETICULUM AND PROCESS FOR PRODUCING THE SAME
A metal-coated lipid bimolecular membrane endoplasmic reticulum, and a process for producing the same. There is provided a metal-coated lipid bimolecular membrane endoplasmic reticulum having on its surface a network of siloxane bond (Si-O-Si bond). Further, there is provided a process for producing a metal-coated lipid bimolecular membrane endoplasmic reticulum, comprising the steps of (1) at or after the formation by self-assembly of a lipid bimolecular membrane endoplasmic reticulum having on its surface a network of siloxane bond (Si-O-Si bond), furnishing the surface of the lipid bimolecular membrane endoplasmic reticulum with a functional group having metal catalyst carrying capability; (2) fixing a metal catalyst to the surface of the lipid bimolecular membrane endoplasmic reticulum; (3) optionally reducing the metal catalyst; and (4) carrying out an electroless plating.
C23C 18/20 - Pretreatment of the material to be coated of organic surfaces, e.g. resins
C07D 233/61 - Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms with hydrocarbon radicals, substituted by nitrogen atoms not forming part of a nitro radical, attached to ring nitrogen atoms
C07F 7/18 - Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
100.
NICKEL CRUCIBLE FOR MELTING OF ANALYTICAL SAMPLE, METHOD OF PREPARING ANALYTICAL SAMPLE AND METHOD OF ANALYSIS
A nickel crucible for melting of analytical sample used in pretreatment of an analytical sample, characterized in that the purity of the nickel crucible is 99.9999 wt.% or higher. Further, there is provided a method of analysis comprising melting a sample by the use of the nickel crucible for melting having a purity of 99.9999 wt.% or higher and analyzing the melt to thereby obtain analytical results wherein the quantitative determination lower limits of Mn, Al, Si, Mg, Pb, Fe, Co, Ti, Cu, Cr, Zr, Mo and W are 5 wtppm, 10 wtppm, 10 wtppm, 5 wtppm, 5 wtppm, 5 wtppm, 5 wtppm, 20 wtppm, 20 wtppm, 10 wtppm, 5 wtppm, 2 wtppm and 10 wtppm, respectively. From the viewpoint of recent analytical technology demanding rapid and accurate measurement of high-purity materials, high-purity analysis is attained through inhibition of mixing of impurities from the crucible.
patents
