Goods & Services

Disinfectant apparatus for medical purposes; Disinfecting ultraviolet lamps housed in a container or cover for disinfecting objects placed therein; Air sterilisers; Air sterilising apparatus; Air sterilizers; Air sterilizers for household purposes; Air sterilizing apparatus; Dish sterilizers; Sanitizing apparatus for linens using ultraviolet light, ozone sterilization and low pressure techniques; Shoe sterilizers for household purposes; Water sterilisers; Water sterilizers; Water treatment equipment, namely, ultraviolet sterilization units; all the foregoing for preventing the transmission of the coronavirus and other pathogens

Abstract

The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.

IPC Classes  ?

• C30B 25/08 - Reaction chambersSelection of materials therefor
• C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
• C30B 29/40 - AIIIBV compounds

Abstract

The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at% to 49.9 at%, nitrogen is from 0.1 at% to 49.9 at% and a sum of oxygen and nitrogen is about 50 at%. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AION), aluminum oxyhydronitride (AIHON), aluminum oxycarbonitride (AICON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AISi, C-AI, W-Cu, or Ti.

IPC Classes  ?

• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H05K 1/05 - Insulated metal substrate

Abstract

The present disclosure generally relates to systems and methods for growing and preferentially volumetrically enhancing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals. The systems and methods further include using thermal gradients and/or chemical driving agents to enhance or limit crystal growth in one or more planes.

IPC Classes  ?

• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds

Abstract

The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.

IPC Classes  ?

• C03B 25/12 - Annealing glass products in a continuous way with vertical displacement of the glass products of glass sheets
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds

Abstract

The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.

IPC Classes  ?

• C30B 1/02 - Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
• C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
• C30B 29/40 - AIIIBV compounds
• C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Abstract

PVD methods and apparatus for producing materials, for example nitrides, are disclosed as are electrode materials.

IPC Classes  ?

• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
• H01J 27/04 - Ion sourcesIon guns using reflex discharge, e.g. Penning ion sources
• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
• C23C 14/32 - Vacuum evaporation by explosionVacuum evaporation by evaporation and subsequent ionisation of the vapours

Abstract

PVD and HPHT methods and apparatus for producing materials, for example nitrides, are disclosed.

IPC Classes  ?

• H01J 37/08 - Ion sourcesIon guns
• H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
• H01J 27/02 - Ion sourcesIon guns
• C23C 14/32 - Vacuum evaporation by explosionVacuum evaporation by evaporation and subsequent ionisation of the vapours
• C23C 16/452 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species

Abstract

The disclosure provides a process to anneal group III-V metal nitride crystals, wafers, epitaxial layers, and epitaxial films to reduce nitrogen vacancies. In particular, the disclosure provides a process to perform slow annealing of the group III-V metal nitrides in a high temperature and high pressure environment.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof

Abstract

The disclosure provides a device and method used to produce bulk single crystals. In particular, the disclosure provides a device and method used to produce bulk single crystals of a metal compound by an elemental reaction of a metal vapor and a reactant gas by an elemental reaction of a metal vapor and a reactant gas.

IPC Classes  ?

• C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Abstract

The disclosure provides a device and method used to produce bulk single crystals. In particular, the disclosure provides a device and method used to produce bulk single crystals of a metal compound by an elemental reaction of a metal vapor and a reactant gas by an elemental reaction of a metal vapor and a reactant gas.

IPC Classes  ?

• C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials

Abstract

The disclosure provides a process to anneal group III-V metal nitride crystals, wafers, epitaxial layers, and epitaxial films to reduce nitrogen vacancies. In particular, the disclosure provides a process to perform slow annealing of the group III-V metal nitrides in a high temperature and high pressure environment.

IPC Classes  ?

• H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds