A method for source mask optimization or mask only optimization used to image a pattern onto a substrate is described. The method comprises determining a non-uniform illumination intensity profile for illumination from an illumination source; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto the substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination source and the projection optics of a lithographic apparatus. In some embodiments, the projection optics comprise a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may comprise performing optical proximity correction, for example.
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
2.
SUBSTRATE HOLDER FOR USE IN A LITHOGRAPHIC APPARATUS
A substrate holder, for a lithographic apparatus, having a main body, a plurality of support elements to support a substrate and a seal unit. The seal unit may include a first seal positioned outward of and surrounding the plurality of support elements. A position of a substrate contact region of an upper surface of the first seal may be arranged at a distance from the plurality of support elements sufficient enough such that during the loading/unloading of the substrate, a force applied to the first seal by the substrate is greater than a force applied to the plurality of support elements by the substrate. A profile of the contact region, in a cross section through the seal, may have a shape which is configured such that during the loading/unloading of the substrate, the substrate contacts the seal via at least two different points of the profile.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
3.
SYSTEMS FOR CLEANING A PORTION OF A LITHOGRAPHY APPARATUS
A cleaning tool configured to be inserted into a lithography apparatus in a first configuration, configured to be engaged by a handler of the lithography apparatus, and used for cleaning a portion of the lithography apparatus. The cleaning tool is configured to move from the first configuration to a second, expanded configuration, after engagement by the handler such that the cleaning tool is in the second configuration when used for cleaning the portion of the lithography apparatus. There may also be a container configured to hold the cleaning tool in the first configuration and fit into the lithography apparatus. In that case, the cleaning tool is configured to be inserted into the lithography apparatus in the container, moved from the container by the handler for the cleaning, and returned to the container by the handler after the cleaning.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
B08B 1/14 - WipesAbsorbent members, e.g. swabs or sponges
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
B08B 13/00 - Accessories or details of general applicability for machines or apparatus for cleaning
4.
APPARATUS FOR AND METHOD OF LITHOGRAPHY SUPPORT CLEANING
Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which a base supporting the substrate is provided with a surface profile so as to be thicker towards a middle portion of the base so that when a substrate supported by the base is pressed between the working surface and the base the contaminant is transferred from the working surface to the substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
5.
METHOD TO MANUFACTURE NANO RIDGES IN HARD CERAMIC COATINGS
A method for reducing sticking of an object to a surface used in a lithography process includes receiving, at a control computer, instructions for a tool configured to modify the surface and forming, in a deterministic manner based on the instructions received at the control computer, a modified surface having a furrow and a ridge, wherein the ridge reduces the sticking by reducing a contact surface area of the modified surface. Another apparatus includes a modified surface that includes furrows and ridges forming a reduced contact surface area to reduce a sticking of an object to the modified surface, the ridges having an elastic property that causes the reduced contact surface area to increase when the plurality of ridges is elastically deformed.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
7.
LITHOGRAPHIC APPARATUS, LOCKING DEVICE, AND METHOD
A lithographic apparatus includes an illumination system to illuminate a pattern of a patterning device, a projection system to project an image of the pattern onto a substrate, a movable stage to support the patterning device or the substrate, a slotted object, and a locking device (700) to prevent a motion of the movable stage. The locking device comprises an actuator (702) and a wheel device (704) comprising a ring feature (708) and coupled to the actuator. The actuator rotates the wheel device about a rotation axis (706). The ring feature has a width (710) defined parallel to the rotation axis. The width is variable with respect to azimuthal direction of the wheel device. The ring feature engages a slot of the slotted object. The rotating adjusts the width of the ring feature within the slot such that a relative motion between the device and the slotted object is prevented.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
8.
METROLOGY SYSTEMS WITH PHASED ARRAYS FOR CONTAMINANT DETECTION AND MICROSCOPY
A metrology system includes a radiation source (708), a phased array (722a,b;724a,b;726;734), a detector, and a comparator. The phased array includes optical elements (706), waveguides (704), and phase modulators (702). The phased array generates a beam of radiation and directs the beam toward a surface of an object. The optical elements radiate radiation waves. The waveguides guide radiation from the radiation source to the optical elements. The phase modulators adjust phases of the radiation waves such that the radiation waves combine to form the beam. The detector receives radiation scattered from the surface and generates a detection signal based on the received radiation. The comparator analyzes the detection signal and determines a location of a defect on the surface based on the analyzing.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/956 - Inspecting patterns on the surface of objects
G02F 1/295 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection in an optical waveguide structure
Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include irradiating, by a radiation source, a portion of a finger assembly with radiation. The example method can further include receiving, by a radiation detector, at least a portion of the radiation in response to the irradiating of the portion of the finger assembly. The example method can further include determining, by a processor, a change in a shape of the finger assembly based on the received radiation. The example method can further include generating, by the processor, a control signal configured to modify a position of the finger assembly based on the determined change in the shape of the finger assembly. Subsequently, the example method can include transmitting, by the processor, the control signal to a motion control system coupled to the finger assembly.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
10.
SYSTEMS, METHODS, AND DEVICES FOR THERMAL CONDITIONING OF RETICLES IN LITHOGRAPHIC APPARATUSES
Embodiments herein describe systems, methods, and devices for thermal conditioning of patterning devices at a litho-graphic apparatus. A patterning device cooling system for thermally conditioning a patterning device (202) of a lithographic apparatus is described, the cooling system including a thermal conditioner that thermally conditions the patterning device, and a controller that controls the thermal conditioner to determine a temperature state of the patterning device, determine a production state of the litho-graphic apparatus, and thermally condition the patterning device for exposures based on the temperature state and a production state of the lithographic apparatus.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
11.
MODULAR WAFER TABLE AND METHODS OF MANUFACTURING THEREOF
The present disclosure is directed to a modular wafer table and methods for refurbishing a scrapped wafer to manufacture the modular wafer table. The method comprises removing one or more burls from a surface of a wafer table; polishing the surface of the wafer table after removing the one or more burls to form a core module; forming a burl module having a plurality of burls thereon; and bonding the core module to the burl module.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
12.
METROLOGY SYSTEMS, TEMPORAL AND SPATIAL COHERENCE SCRAMBLER AND METHODS THEREOF
A system includes a radiation source, an optical element, a detector, and a processor. The radiation source generates a beam of radiation. The optical element produces a non-uniform change in a phase of the beam of radiation and outputs a coherence-scrambled radiation for irradiating a target. An optical property of the optical element is tunable so as to change an amount of incoherence of the coherence-scrambled radiation. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation. The processor analyzes the measurement signal to determine a characteristic of the target.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
13.
OPERATING A METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF
A method includes detecting data associated with a patterning device and/or a lithographic apparatus, performing an action from a plurality of actions when a determination not to proceed is made, and performing the action on the patterning device and/or a lithographic apparatus.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A method includes irradiating an object with an illumination beam, receiving, using a detector, scattered light from a first side of the object, generating a signal based on the scattered light, comparing the signal to a reference model, and determining a quantity of wear of the first side of the object based on the comparing. The first side of the object includes a layer of a coating material, and the irradiating is from a second side of the object. The scattered light includes transmitted light through the object from the second side to the first side.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
15.
DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED METROLOGY METHOD
A method of correcting a holographic image, a processing device, a dark field digital holographic microscope, a metrology apparatus and an inspection apparatus. The method includes obtaining a holographic image; determining at least one attenuation function due to motion blur from the holographic image; and correcting the holographic image, or a portion thereof, using the at least one attenuation function.
G02B 21/36 - Microscopes arranged for photographic purposes or projection purposes
G03H 1/00 - Holographic processes or apparatus using light, infrared, or ultraviolet waves for obtaining holograms or for obtaining an image from themDetails peculiar thereto
G03H 1/02 - Holographic processes or apparatus using light, infrared, or ultraviolet waves for obtaining holograms or for obtaining an image from themDetails peculiar thereto Details
An optical filter apparatus including an optical divergence device, operable to receive optical pulses and spatially distribute the optical pulses over an optical plane in dependence with a pulse energy of each of the optical pulses; and a spatial filter, located at the optical plane, operable to apply spatial filtering to the optical pulses based on a location of each of the optical pulses at the optical plane resulting from the spatial distributing.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
17.
APPARATUS AND METHOD FOR DETERMINING A CONDITION ASSOCIATED WITH A PELLICLE
An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
18.
INTENSITY ORDER DIFFERENCE BASED METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHODS THEREOF
The system includes a radiation source, a diffractive element, an optical system, a detector, and a processor. The radiation source generates radiation. The diffractive element diffracts the radiation to generate a first beam and a second beam. The first beam includes a first non-zero diffraction order and the second beam includes a second non-zero diffraction order that is different from the first non-zero diffraction order. The optical system receives a first scattered beam and a second scattered radiation beam from a target structure and directs the first scattered beam and the second scattered beam towards a detector. The detector generates a detection signal. The processor analyzes the detection signal to determine a target structure property based on at least the detection signal. The first beam is attenuated with respect to the second beam or the first scattered beam is purposely attenuated with respect to the second scattered beam.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
19.
Systems and methods for measuring intensity in a lithographic alignment apparatus
A metrology system includes a radiation source, an adjustable diffractive element, an optical system, an optical element, and a processor. The radiation source generates radiation. The adjustable diffractive element diffracts the radiation to generate first and second beams of radiation. The first and second beams have first and second different non-zero diffraction orders, respectively. The optical system directs the first and second beams toward a target structure such that first and second scattered beams of radiation are generated based on the first and second beams, respectively. The metrology system adjusts a phase difference of the first and second scattered beams. The optical element interferes the first and second scattered beams at an imaging detector that generates a detection signal. The processor receives and analyzes the detection signal to determine a property of the target structure based on the adjusted phase difference.
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
Systems, apparatuses, and methods are provided for heating a plurality of optical components. An example method can include receiving an input radiation beam from a radiation source. The example method can further include generating a plurality of output radiation beams based on the input radiation beam. The example method can further include transmitting the plurality of output radiation beams towards a plurality of heater head optics configured to heat the plurality of optical components. Optionally, the example method can further include controlling a respective power value, and realizing a flat-top far-field profile, of each of the plurality of output radiation beams.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
21.
Invariable magnification multilevel optical device with telecentric converter
A pre-alignment system includes a common object lens group configured to collect diffracted beams from a patterning device, wherein the common object lens group is further configured to produce telecentricity in an object space of the pre-alignment system. The pre-alignment system also includes a multipath sensory array having at least one image lens system, wherein the at least one image lens system includes a telecentric converter lens configured to produce telecentricity in an image space of the pre-alignment system.
A metrology system (400) includes a multi-source radiation system. The multi-source radiation system includes a waveguide device (502) and the multi-source radiation system is configured to generate one or more beams of radiation. The metrology system (400) further includes a coherence adjuster (500) including a multimode waveguide device (504). The multimode waveguide device (504) includes an input configured to receive the one or more beams of radiation from the multi-source radiation system (514) and an output (518) configured to output a coherence adjusted beam of radiation for irradiating a target (418). The metrology system (400) further includes an actuator (506) coupled to the waveguide device (502) and configured to actuate the waveguide device (502) so as to change an impingement characteristic of the one or more beams of radiation at the input of the multimode waveguide device (504).
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
23.
Multiple objectives metrology system, lithographic apparatus, and methods thereof
A metrology or inspection system, a lithographic apparatus, and a method are provided. The system includes an illumination system, an optical system, a first optical device, a second optical device, a detector, and a processor. The optical system is configured to split an illumination beam into a first sub-beam and a second sub-beam. The first optical device is configured to receive the first sub beam and direct the first sub-beam towards a first spot on a substrate. The substrate includes one or more target structures. The second optical device is configured to receive the second sub-beam and direct the second sub-beam towards a second spot on the substrate. The first spot is a different location than the second spot. The detector is configured to receive diffracted beams and to generate a detection signal. The processor is configured to determine a property of the one or more target structures.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
A radiation source arrangement including: a radiation source operable to generate source radiation including source energy pulses; and at least one non-linear energy-filter operable to filter the source radiation to obtain filtered radiation including filtered energy pulses. The at least one non-linear energy-filter is operable to mitigate variation in energy in the filtered radiation by reducing the energy level of the source energy pulses which have an energy level corresponding to one of both extremities of an energy distribution of the source energy pulses by a greater amount than the source energy pulses which have an energy level corresponding to a peak of the energy distribution.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An inspection system, a lithographic apparatus, and a method are provided. The inspection system includes an illumination system, an optical system, a shutter system, an objective system and a detector. The illumination system is configured to generate an illumination beam. The optical system is configured to split the illumination beam into a first sub-beam and a second sub-beam. The shutter system is configured to independently control a transmittance of the first sub-beam and the second subbeam. The objective system is configured to receive the first sub-beam and the second beam from the optical system and direct the first sub-beam and the second sub-beam towards a substrate having a target structure. The detector is configured to receive an image or a diffracted image of the target structure.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
26.
VACUUM SHEET BOND FIXTURING AND FLEXIBLE BURL APPLICATIONS FOR SUBSTRATE TABLES
Systems, apparatuses, and methods are provided for manufacturing a substrate table. An example method can include forming a vacuum sheet including a plurality of vacuum connections and a plurality of recesses configured to receive a plurality of burls disposed on a core body for supporting an object such as a wafer. Optionally, at least one burl can be surrounded, partially or wholly, by a trench. The example method can further include using the vacuum sheet to mount the core body to an electrostatic sheet including a plurality of apertures configured to receive the plurality of burls. Optionally, the example method can include using the vacuum sheet to mount the core body to the electrostatic sheet such that the plurality of recesses of the vacuum sheet line up with the plurality of burls of the core body and the plurality of apertures of the electrostatic sheet.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
27.
SYSTEMS AND METHODS FOR FORMING STRUCTURES ON A SURFACE
Systems and methods for forming structures (e.g., a plurality of support peaks) on a surface are described. Forming structures on a surface includes masking one or more portions of the surface; removing material from one or more unmasked portions of the surface; and iteratively repeating the masking and removing to reshape the unmasked portions of the surface until the plurality of structures (e.g., support peaks) are formed such that regions of the surface between individual structures (support peaks) have a target characteristic such as a target topography, roughness, etc.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A metrology tool that includes a substrate table to hold a substrate; a projection system configured to project a beam on a target portion of the substrate; an actuator configured to adjust a position of the projection system relative to the substrate on the substrate table; a sensor configured to determine a position of the substrate table; and a one or more processors configured to: determine, based on the position of the substrate table, a position error of the substrate table with respect to a reference; and control, via the actuator, a position of the projection system to compensate for the position error of the substrate table so that the beam projects on the target portion of the substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
29.
Double-scanning opto-mechanical configurations to improve throughput of particle inspection systems
Systems, apparatuses, and methods are provided for increasing the throughput of a particle inspection system. During a first portion of an exposure time period of the particle inspection system, an example method can include irradiating a first region of a substrate surface, blocking all reflected radiation outside the first region, and generating a first sub-image of the first region based on radiation reflected from the first region. During a second portion of the exposure time period, the example method can further include irradiating a second region of the substrate surface, blocking all reflected radiation outside the second region, and generating a second sub-image of the second region based on radiation reflected from the second region. Subsequently, the example method can include generating a composite image based on the first sub-image and the second sub-image.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
30.
LITHOGRAPHIC APPARATUS, METROLOGY SYSTEMS, AND METHODS THEREOF
A system includes an illumination system, an optical element, a switching element and a detector. The illumination system includes a broadband light source that generates a beam of radiation. The dispersive optical element receives the beam of radiation and generates a plurality of light beams having a narrower bandwidth than the broadband light source. The optical switch receives the plurality of light beams and transmits each one of the plurality of light beams to a respective one of a plurality of alignment sensor of a sensor array. The detector receives radiation returning from the sensor array and to generate a measurement signal based on the received radiation.
A metrology system includes a beam splitter and first and second sensors. The beam splitter splits scattered radiation scattered by a target into first and second portions of radiation. The first sensor receives the first portion. The second sensor receives the second portion after the second portion propagates along a path that includes a wedge system comprising a first wedge configured to diverge the second portion.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
32.
Sub micron particle detection on burl tops by applying a variable voltage to an oxidized wafer
Systems, apparatuses, methods, and computer program products are provided for determining a free form flatness of a substrate table. An example system can include a substrate table that includes a first substrate table surface and a grounded substrate table electrical connection configured to ground the substrate table. The system can further include a substrate that includes a semiconducting layer, a thermally-grown insulating layer, a first substrate surface disposed on the insulating layer, and a substrate electrical connection configured to transmit a voltage to the semiconducting layer. The system can further include a metrology system configured to apply a voltage to the substrate electrical connection to electrostatically clamp the substrate to the substrate table, measure a flatness of the first substrate surface, and determine a free form flatness of the first substrate table surface based on the measured flatness of the first substrate surface.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
33.
POD HANDLING SYSTEMS AND METHODS FOR A LITHOGRAPHIC DEVICE
Systems, apparatuses, and methods are provided for transporting a reticle chamber (pod) for processing. In one example, a system for transporting the pod is disclosed. The system may include a moving apparatus, abase coupled to the moving apparatus, and a gripping ring extending from the base. In some aspects, the gripping ring grips a flange extending from the pod. The moving apparatus moves the base in response to the gripping ring gripping the flange.
G03F 1/66 - Containers specially adapted for masks, mask blanks or pelliclesPreparation thereof
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
34.
LITHOGRAPHIC APPARATUS AND METHODS FOR MULTI-EXPOSURE OF A SUBSTRATE
A lithographic system and a method for exposing a substrate are provided. The method includes providing a plurality of mask sets. Each mask set includes complementary masks corresponding to a respective pattern. The method further comprises exposing the substrate with the plurality of mask sets. A stitch location between the complementary masks of a mask set is different than a stitch location between the complementary masks of each other mask set of the plurality of mask sets.
A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
G01M 11/00 - Testing of optical apparatusTesting structures by optical methods not otherwise provided for
G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements
A metrology system comprises a radiation source, an optical element, first and second detectors, an integrated optical device comprising a multimode waveguide, and a processor. The radiation source generates radiation. The optical element directs radiation toward a target to generate scattered radiation from the target. The first detector receives a first portion of the scattered radiation and generates a first detection signal based on the received first portion. The multimode waveguide interferes a second portion of the scattered radiation using modes of the multimode waveguide. The second detector receives the interfered second portion and generates a second detection signal based on the received interfered second portion. The processor receives the first and second detection signals. The processor analyzes the received first portion, the received interfered second portion, and a propagation property of the multimode waveguide. The processor determines the property of the target based on the analysis.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Systems, apparatuses, and methods are provided for determining the alignment of a substrate. An example method can include emitting a multi-wavelength radiation beam including a first wavelength and a second wavelength toward a region of a surface of a substrate. The example method can further include measuring a first diffracted radiation beam indicative of first order diffraction at the first wavelength in response to an irradiation of the region by the multi-wavelength radiation beam. The example method can further include measuring a second diffracted radiation beam indicative of first order diffraction at the second wavelength in response to the irradiation of the region by the multi-wavelength radiation beam. Subsequently, the example method can include generating, based on the measured first set of photons and the measured second set of photons, an electronic signal for use in determining an alignment position of the substrate.
A patterning device pre-alignment sensor system is disclosed. The system comprises at least one illumination source configured to provide an incident beam along a normal direction towards a patterning device. The system further comprises an object lens group channel along the normal direction configured to receive a 0th order refracted beam from the patterning device. The system further comprises a first light reflector configured to redirect the 0th order refracted beam to form a first retroreflected beam. The system further comprises a first image lens group channel configured to transmit the first retroreflected beam to a first light sensor. The first light sensor is configured to detect the first retroreflected beam to determine a location feature of the patterning device.
A metrology system includes a radiation source, first, second, and third optical systems, and a processor. The first optical system splits the radiation into first and second beams of radiation and impart one or more phase differences between the first and second beams. The second optical system directs the first and second beams toward a target structure to produce first and second scattered beams of radiation. The third optical system interferes the first and second scattered beams at an imaging detector. The imaging detector generates a detection signal based on the interfered first and second scattered beams. The metrology system modulates one or more phase differences of the first and second scattered beams based on the imparted one or more phase differences. The processor analyzes the detection signal to determine a property of the target structure based on at least the modulated one or more phase differences.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
40.
OPTICAL APPARATUS AND LITHOGRAPHIC APPARATUS USING THE OPTICAL APPARATUS
An optical apparatus and a lithographic apparatus including the optical apparatus. The optical apparatus includes a substrate having an aperture for passing light; a transmissive optical element covering the aperture of the substrate; and an optical contact bond between the substrate and transmissive optical element, the optical contact bond being spaced from the aperture a sufficient distance such that stress forces in the transmissive optical element from the optical contact bond to the aperture are below an acceptable stress threshold. The optical contact bond geometry herein, for example, minimizes a contact area and provides a quasi-kinematic (near-exactly constrained) interface between the substrate and the optical element.
A method for generating an alignment signal that includes detecting local dimensional distortions of an alignment mark and generating the alignment signal based on the alignment mark. The alignment signal is weighted based on the local dimensional distortions of the alignment mark. Detecting the local dimensional distortions can include irradiating the alignment mark with radiation, the alignment mark including a geometric feature, and detecting one or more phase and/or amplitude shifts in reflected radiation from the geometric feature. The one or more phase and/or amplitude shifts correspond to the local dimensional distortions of the geometric feature. A parameter of the radiation, an alignment inspection location within the geometric feature, an alignment inspection location on a layer of a structure, and/or a radiation beam trajectory across the geometric feature may be determined based on the one or more detected phase and/or amplitude shifts.
An inspection system (1600), a lithography apparatus, and an inspection method are provided. The inspection system (1600) includes an illumination system (1602), a detection system (1606), and processing circuitry (1622). The illumination system generates a first illumination beam (1610) at a first wavelength and a second illumination beam (1618) at a second wavelength. The first wavelength is different from the second wavelength. The illumination system irradiates an object (1612) simultaneously with the first illumination beam and the second illumination beam. The detection system receives radiation (1620) scattered by a particle (1624) present at a surface (1626) of the object at the first wavelength. The detection system generates a detection signal. The processing circuitry determines a characteristic of the particle based on the detection signal.
An inspection system, a lithography apparatus, and an inspection method are provided. The inspection system includes an illumination system, a detection system, and processing circuitry. The illumination system generates a broadband beam and illuminates surface of an object with the broadband illumination beam. The broadband beam has a continuous spectral range. The detection system receives radiation scattered at the surface and by a structure near the surface. The detection system generates a detection signal based on an optical response to the broadband illumination beam. The processing circuitry analyzes the detection signal. The processing circuitry distinguishes between a spurious signal and a signal corresponding to a defect on the surface based on the analyzing The spurious signal is diminished for at least a portion of the continuous spectral range.
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G01N 21/956 - Inspecting patterns on the surface of objects
An apparatus for and method of sensing multiple alignment marks in which the optical axis of a detector is divided into multiple axes each of which can essentially simultaneously detect a separate alignment mark to generate a signal which can then be multiplexed and presented to a single detector or multiple detectors thus permitting more rapid detection of multiple marks.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
45.
Contaminant detection metrology system, lithographic apparatus, and methods thereof
A system (400) includes an illumination system (402), a detector (404), and a comparator (406). The illumination system includes a radiation source (408) and a spatial light modulator (410). The radiation source generates a beam of radiation (442). The spatial light modulator directs the beam toward a surface (436) of an object (428) and adjusts a spatial intensity distribution of the beam at the surface. The detector receives radiation (444) scattered at the surface and by a structure (434) near the surface. The detector generates a detection signal based on the received radiation. The comparator receives the detection signal, generates a first image based on the detection signal, and distinguishes between a spurious signal and a signal corresponding to a presence of a foreign particle on the surface based on the first image and the adjusted spatial intensity distribution.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/94 - Investigating contamination, e.g. dust
46.
IMPROVED ALIGNMENT OF SCATTEROMETER BASED PARTICLE INSPECTION SYSTEM
A pattering device inspection apparatus, system and method are described. According to one aspect, an inspection method is disclosed, the method including receiving, at a multi-element detector within an inspection system, radiation scattered at a surface of an object. The method further includes measuring, with processing circuitry, an output of each element of the multi-element detector, the output corresponding to the received scattered radiation. Moreover, the method includes calibrating, with the processing circuitry, the multi-element detector by identifying an active pixel area comprising one or more elements of the multi-element detector with a measured output being above a predetermined threshold. The method also includes identifying an inactive pixel area comprising a remainder of elements of the multi-element detector. Additionally, the method includes setting the active pixel area as a default alignment setting between the multi-element detector and a light source causing the scattered radiation.
Embodiments herein describe methods, devices, and systems for a reticle gripper damper and isolation system for handling reticles and reducing vibrations in a reticle handler for lithography apparatuses and systems. A reticle handler apparatus includes a reticle handler arm, a reticle baseplate configured to hold the reticle, and a gripper arranged to connect the reticle baseplate to the reticle handler arm. The gripper includes a static structure that is coupled to the reticle handler arm, an isolation structure that is coupled to the static structure, and one or more damping elements. The gripper is configured to reduce vibrations of the reticle in the reticle handler apparatus using the one or more damping elements.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
48.
Lithographic system provided with a deflection apparatus for changing a trajectory of particulate debris
An apparatus comprising: a radiation receiving apparatus provided with an opening operable to receive radiation from a radiation source through the opening; wherein the radiation receiving apparatus comprises a deflection apparatus arranged to change a trajectory of a particle through the opening arriving at the radiation receiving apparatus.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
49.
IMPROVED BROADBAND RADIATION GENERATION IN PHOTONIC CRYSTAL OR HIGHLY NON-LINEAR FIBRES
Radiation source assembly and method for generating broadband radiation by spectral broadening. The radiation source assembly comprises a pump assembly configured to provide broadband input radiation. The pump assembly comprises a pump source configured to provide first radiation at a pump wavelength, and a broadband assembly configured to provide second radiation comprising a continuous wavelength range, wherein the first radiation and the second radiation form the broadband input radiation. The radiation source assembly further comprises an optical fibre configured to receive the broadband input radiation. The optical fibre comprises a core configured along at least a part of the length of the fibre to guide the received broadband input radiation during propagation through the fibre, so as to generate broadband radiation by spectral broadening to be output by the fibre.
An inspection system includes a radiation source that generates a beam of radiation and irradiates a first surface of an object, defining a region of the first surface of the object. The radiation source also irradiates a second surface of the object, defining a region of the second surface, wherein the second surface is at a different depth level within the object than the first surface. The inspection system may also include a detector that defines a field of view (FOV) of the first surface including the region of the first surface, and receives radiation scattered from the region of the first surface and the region of the second surface. The inspection system may also include a processor that discards image data not received from the region of the first surface, and constructs a composite image comprising the image data from across the region of the first surface.
G01N 21/956 - Inspecting patterns on the surface of objects
G01N 21/88 - Investigating the presence of flaws, defects or contamination
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
51.
Optical designs of miniaturized overlay measurement system
A compact sensor apparatus having an illumination beam, a beam shaping system, a polarization modulation system, a beam projection system, and a signal detection system. The beam shaping system is configured to shape an illumination beam generated from the illumination system and generate a flat top beam spot of the illumination beam over a wavelength range from 400 nm to 2000 nm. The polarization modulation system is configured to provide tenability of linear polarization state of the illumination beam. The beam projection system is configured to project the flat top beam spot toward a target, such as an alignment mark on a substrate. The signal detection system is configured to collect a signal beam comprising diffraction order sub-beams generated from the target, and measure a characteristic (e.g., overlay) of the target based on the signal beam.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
52.
WAFER CLAMP HARD BURL PRODUCTION AND REFURBISHMENT
Systems, apparatuses, and methods are provided for manufacturing a wafer clamp having hard burls. The method can include providing a first layer that includes a first surface. The method can further include forming a plurality of burls over the first surface of the first layer. The forming of the plurality of burls can include forming a subset of the plurality of burls to a hardness of greater than about 6.0 gigapascals (GPa).
A system, method, a lithographic apparatus and a software product configured to determine a drift in an attribute of an illumination and a corresponding drift correction. The system includes a lithographic apparatus that includes at least two sensors, each configured to measure a property related to an illumination region provided for imaging a substrate. Furthermore, a processor is configured to: determine, based on a ratio of the measured property, a drift of the illumination region with respect to a reference position; determine, based on the drift of the illumination region, a drift in an attribute related to the illumination upstream of the illumination region measured by the at least two sensors, and determine, based on the drift in the attribute, the drift correction to be applied to the attribute to compensate for the drift in the attribute.
Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming, during a first duration of time comprising a first time, a top clamp comprising a first set of electrodes and a plurality of burls. The method can further include forming, during a second duration of time comprising a second time that overlaps the first time, a core comprising a plurality of fluid channels configured to carry a thermally conditioned fluid. The method can further include forming, during a third duration of time comprising a third time that overlaps the first time and the second time, a bottom clamp comprising a second set of electrodes. In some aspects, the example method can include manufacturing the electrostatic clamp without an anodic bond.
C03C 27/00 - Joining pieces of glass to pieces of other inorganic materialJoining glass to glass other than by fusing
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
55.
METROLOGY SYSTEMS WITH PHASED ARRAYS FOR CONTAMINANT DETECTION AND MICROSCOPY
A metrology system includes a radiation source (708), a phased array (722a,b;724a,b;726;734), a detector, and a comparator. The phased array includes optical elements (706), waveguides (704), and phase modulators (702). The phased array generates a beam of radiation and directs the beam toward a surface of an object. The optical elements radiate radiation waves. The waveguides guide radiation from the radiation source to the optical elements. The phase modulators adjust phases of the radiation waves such that the radiation waves combine to form the beam. The detector receives radiation scattered from the surface and generates a detection signal based on the received radiation. The comparator analyzes the detection signal and determines a location of a defect on the surface based on the analyzing.
G01N 21/956 - Inspecting patterns on the surface of objects
G02F 1/295 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection in an optical waveguide structure
56.
LITHOGRAPHIC APPARATUS, LOCKING DEVICE, AND METHOD
A lithographic apparatus includes an illumination system to illuminate a pattern of a patterning device, a projection system to project an image of the pattern onto a substrate, a movable stage to support the patterning device or the substrate, a slotted object, and a locking device (700) to prevent a motion of the movable stage. The locking device comprises an actuator (702) and a wheel device (704) comprising a ring feature (708) and coupled to the actuator. The actuator rotates the wheel device about a rotation axis (706). The ring feature has a width (710) defined parallel to the rotation axis. The width is variable with respect to azimuthal direction of the wheel device. The ring feature engages a slot of the slotted object. The rotating adjusts the width of the ring feature within the slot such that a relative motion between the device and the slotted object is prevented.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
57.
Overlay measurement system using lock-in amplifier technique
A detection system (200) includes an illumination system (210), a first optical system (232), a phase modulator (220), a lock-in detector (255), and a function generator (230). The illumination system is configured to transmit an illumination beam (218) along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target (204) on a substrate (202). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams (222, 224, 226) that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
58.
Lithographic apparatus and electrostatic clamp designs
Embodiments herein describe methods, devices, and systems for reducing an electric field at a clamp-reticle interface using an enhanced electrostatic clamp. In particular, the electrostatic clamp includes a clamp body, an electrode layer disposed on a top surface of the clamp body, and a plurality of burls that project from a bottom surface of the clamp body, wherein the electrode layer comprises a plurality of cutouts at predetermined locations that vertically correspond to locations of the plurality of burls at the bottom surface of the clamp body.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
59.
SYSTEMS, METHODS, AND DEVICES FOR THERMAL CONDITIONING OF RETICLES IN LITHOGRAPHIC APPARATUSES
Embodiments herein describe systems, methods, and devices for thermal conditioning of patterning devices at a lithographic apparatus. A patterning device cooling system for thermally conditioning a patterning device (202) of a lithographic apparatus is described, the cooling system including a thermal conditioner that thermally conditions the patterning device, and a controller that controls the thermal conditioner to determine a temperature state of the patterning device, determine a production state of the lithographic apparatus, and thermally condition the patterning device for exposures based on the temperature state and a production state of the lithographic apparatus.
An optical element and a lithographic apparatus including the optical element. The optical element includes a first member having a curved optical surface and a heat transfer surface, and a second member that comprises at least one recess, the at least one recess sealed against the heat transfer surface to form at least one closed channel between the first member and the second member to allow fluid to flow therethrough for thermal conditioning of the curved optical surface. In an embodiment, one or more regions of the heat transfer surface exposed to the at least one closed channel are positioned along a curved profile similar to that of the curved optical surface.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 7/18 - Mountings, adjusting means, or light-tight connections, for optical elements for prismsMountings, adjusting means, or light-tight connections, for optical elements for mirrors
61.
METROLOGY SYSTEMS, TEMPORAL AND SPATIAL COHERENCE SCRAMBLER AND METHODS THEREOF
A system includes a radiation source, an optical element, a detector, and a processor. The radiation source generates a beam of radiation. The optical element produces a non-uniform change in a phase of the beam of radiation and outputs a coherence-scrambled radiation for irradiating a target. An optical property of the optical element is tunable so as to change an amount of incoherence of the coherence-scrambled radiation. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation. The processor analyzes the measurement signal to determine a characteristic of the target.
G02F 1/295 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection in an optical waveguide structure
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour
62.
Phase modulators in alignment to decrease mark size
An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.
A cleaning tool configured to be inserted into a lithography apparatus in a first configuration, configured to be engaged by a handler of the lithography apparatus, and used for cleaning a portion of the lithography apparatus. The cleaning tool is configured to move from the first configuration to a second, expanded configuration, after engagement by the handler such that the cleaning tool is in the second configuration when used for cleaning the portion of the lithography apparatus. There may also be a container configured to hold the cleaning tool in the first configuration and fit into the lithography apparatus. In that case, the cleaning tool is configured to be inserted into the lithography apparatus in the container, moved from the container by the handler for the cleaning, and returned to the container by the handler after the cleaning.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
B08B 1/14 - WipesAbsorbent members, e.g. swabs or sponges
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
B08B 13/00 - Accessories or details of general applicability for machines or apparatus for cleaning
A calibration system includes a plate, a fixed alignment mark, and a variable diffraction grating. The plate is adjacent to a wafer alignment mark disposed on a wafer. The fixed alignment mark is disposed on the plate and is configured to act as a reference mark for an initial calibration of the calibration system. The variable diffraction grating is disposed on the plate and includes a plurality of unit cells configured to form a plurality of variable alignment marks. The variable diffraction grating is configured to calibrate a shift-between-orders of one of the variable alignment marks and the fixed alignment mark.
A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.
G03F 1/70 - Adapting basic layout or design of masks to lithographic process requirements, e.g. second iteration correction of mask patterns for imaging
G03F 1/36 - Masks having proximity correction featuresPreparation thereof, e.g. optical proximity correction [OPC] design processes
66.
Lithographic apparatus, metrology system, and illumination systems with structured illumination
A system (500) includes an illumination system (502), a lens element (506), and a detector (504). The illumination system generates a beam of radiation (510) having a first spatial intensity distribution (800) at a pupil plane (528) and a second spatial intensity distribution (900) at a plane of a target (514). The first spatial intensity distribution comprises an annular intensity profile (802) or an intensity profile corresponding to three or more beams. The lens element focuses the beam onto the target. The second spatial intensity distribution is a conjugate of the first intensity distribution and has an intensity profile corresponding to a central beam (902) and one or more side lobes (904) that are substantially isolated from the central beam. The central beam has a beam diameter of approximately 20 microns or less at the target. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
67.
MODULAR WAFER TABLE AND METHODS OF MANUFACTURING THEREOF
The present disclosure is directed to a modular wafer table and methods for refurbishing a scrapped wafer to manufacture the modular wafer table. The method comprises removing one or more burls from a surface of a wafer table; polishing the surface of the wafer table after removing the one or more burls to form a core module; forming a burl module having a plurality of burls thereon; and bonding the core module to the burl module.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
68.
Substrate holder for use in a lithographic apparatus
A substrate holder, for a lithographic apparatus, having a main body, a plurality of support elements to support a substrate and a seal unit. The seal unit may include a first seal positioned outward of and surrounding the plurality of support elements. A position of a substrate contact region of an upper surface of the first seal may be arranged at a distance from the plurality of support elements sufficient enough such that during the loading/unloading of the substrate, a force applied to the first seal by the substrate is greater than a force applied to the plurality of support elements by the substrate. A profile of the contact region, in a cross section through the seal, may have a shape which is configured such that during the loading/unloading of the substrate, the substrate contacts the seal via at least two different points of the profile.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
69.
Method for filtering an image and associated metrology apparatus
Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/956 - Inspecting patterns on the surface of objects
70.
METROLOGY MARK STRUCTURE AND METHOD OF DETERMINING METROLOGY MARK STRUCTURE
A structure of a semiconductor device with a sub-segmented grating structure as a metrology mark and a method for configuring the metrology mark. The method for configuring a metrology mark may be used in a lithography process. The method may include determining an initial characteristic function of an initial metrology mark disposed within a layer stack. The method also includes perturbing one or more variables of the plurality of subsegments of the metrology mark (e.g., pitch, duty cycle, and/or line width of the plurality of subsegments) and further perturbing a thickness of one or more layers within the layer stack. The method further includes iteratively performing the perturbations until a minimized characteristic function of an initial metrology mark is determined to set a configuration for the plurality of subsegments.
G01B 11/26 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes
71.
Metrology systems, coherence scrambler illumination sources and methods thereof
A system includes a radiation source and a phased array. The phased array includes optical elements, waveguides and phase modulators. The phased array generates a beam of radiation. The optical elements radiate radiation waves. The waveguides guide radiation from the radiation source to the optical elements. The phase modulators adjust phases of the radiation waves such that the radiation waves accumulate to form the beam. An amount of incoherence of the beam is based on randomization of the phases.
G02F 1/295 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection in an optical waveguide structure
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
72.
METROLOGY SYSTEMS, MEASUREMENT OF WEAR SYSTEMS AND METHODS THEREOF
A method includes irradiating an object with an illumination beam, receiving, using a detector, scattered light from a first side of the object, generating a signal based on the scattered light, comparing the signal to a reference model, and determining a quantity of wear of the first side of the object based on the comparing. The first side of the object includes a layer of a coating material, and the irradiating is from a second side of the object. The scattered light includes transmitted light through the object from the second side to the first side.
A lithographic apparatus includes an illumination system, a projection system, a temperature- sensitive object, and a temperature sensor that includes a detector and waveguide device that is thermally coupled to the temperature-sensitive object and includes an input end, a downstream end, and first and second scattering features. The illumination system illuminates a pattern of a patterning device. The projection system projects an image of the pattern onto a substrate. Based on temperature, the first scattering feature reflects a first spectrum. Radiation not reflected by the first scattering feature is allowed downstream. Based on temperature, the second scattering feature reflects a second spectrum different from the first spectrum. Radiation not reflected by the second scattering feature is allowed downstream. The detector is disposed to receive radiation including the reflected first and second spectra from the input end and generates a measurement signal based on the received radiation.
Disclosed is a method of correcting a holographic image, a processing device, a dark field digital holographic microscope, a metrology apparatus and an inspection apparatus. The method comprises obtaining the holographic image; determining at least one attenuation function due to motion blur from the holographic image; and correcting the holographic image or a portion thereof using the at least one attenuation function.
G03H 1/00 - Holographic processes or apparatus using light, infrared, or ultraviolet waves for obtaining holograms or for obtaining an image from themDetails peculiar thereto
G03H 1/04 - Processes or apparatus for producing holograms
G03H 1/02 - Holographic processes or apparatus using light, infrared, or ultraviolet waves for obtaining holograms or for obtaining an image from themDetails peculiar thereto Details
G03H 1/26 - Processes or apparatus specially adapted to produce multiple holograms or to obtain images from them, e.g. multicolour technique
Devices and methods are disclosed for modifying substrate support elements of a substrate holder. According to some embodiments, device is disclosed, the device including a substrate holder having a plurality of support elements protruding from a first side of the substrate holder, a support structure configured to hold the substrate holder in a transverse manner from a second side of the substrate holder, and a cleaning tool having a spherical main body. The device also includes a processor that aligns a predetermined region of interest of the substrate holder with a predetermined location of the cleaning tool, manipulates movement of the support structure such that the alignment produces a contact between the predetermined region of interest and the predetermined location, and initiates a cleaning operation of the predetermined region of interest.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
76.
Lithographic patterning device multichannel position and level gauge
A patterning device alignment system including a multipath sensory array including a first collimating light path and one or more other light paths, a first detector positioned at a first end of the first collimating light path, and a second detector positioned at a first end of the one or more other light paths, the first detector configured to receive a reflected illumination beam from an illuminated patterning device and calculate a tilt parameter of the patterning device, and the second detector configured to receive a second reflected illumination beam from a beam splitter and calculate an X-Y planar location position and a rotation position of the patterning device.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
An alignment method includes directing an illumination beam with a varying wavelength or frequency towards an alignment target, collecting diffraction beams from the alignment target and directing towards an interferometer. The alignment method also includes producing, by the interferometer, two diffraction sub-beams from the diffraction beams, wherein the diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment method further includes measuring interference intensity of the diffraction beams based on a temporal phase shift, wherein the temporal phase shift is a function of the varying wavelength or frequency of the illumination beam and a fixed optical path difference between the diffraction beams. The alignment method also includes determining a position of the alignment target from the measured interference intensity.
G03F 9/00 - Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
78.
Lithographic apparatus and ultraviolet radiation control system
The present disclosure provides an ultraviolet radiation control system and a related method for control an ultraviolet radiation in a lithographic apparatus. The ultraviolet radiation control system comprises a housing; a conversion crystal (540), disposed on or in the housing, configured to convert an ultraviolet radiation to a fluorescent radiation; a plurality of photodetectors (550) configured to detect an intensity of a scattered portion of the fluorescent radiation; and at least one diffusive surface (545), disposed on or in the conversion crystal, configured to increase the intensity of the scattered portion of the fluorescent radiation.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
79.
Apparatus for and method of sensing alignment marks
An apparatus for and method of sensing alignment marks in which a self-referencing interferometer based sensor outputs standing images of the alignment marks and camera device is used to capture the images as output by the sensor and a detector is used to obtain phase information about the alignment marks from the images as output by the sensor.
A method includes detecting data associated with a patterning device and/or a lithographic apparatus, performing an evaluation test based on the data, determining whether to proceed with exposing a substrate based on the evaluation test, selecting an action from a plurality of actions when a determination not to proceed is made, and performing the action on the patterning device and/or a lithographic apparatus.
A method of determining an overlay measurement associated with a substrate and a system to obtain an overlay measurement associated with a patterning process. A method for determining an overlay measurement may be used in a lithography patterning process. The method includes generating a diffraction signal by illuminating a first overlay pattern and a second overlay pattern using a coherent beam. The method also includes obtaining an interference pattern based on the diffraction signal. The method further includes determining an overlay measurement between the first overlay pattern and the second overlay pattern based on the interference pattern.
A mode control system and method for controlling an output mode of a broadband radiation source including a photonic crystal fiber (PCF). The mode control system includes at least one detection unit configured to measure one or more parameters of radiation emitted from the broadband radiation source to generate measurement data, and a processing unit configured to evaluate mode purity of the radiation emitted from the broadband radiation source, from the measurement data. Based on the evaluation, the mode control system is configured to generate a control signal for optimization of one or more pump coupling conditions of the broadband radiation source. The one or more pump coupling conditions relate to the coupling of a pump laser beam with respect to a fiber core of the photonic crystal fiber.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
G01M 11/00 - Testing of optical apparatusTesting structures by optical methods not otherwise provided for
A system can include a light source configured to illuminate a surface of a pellicle, a scanner configured to scan the surface of the pellicle; a spectrometer configured to measure a Raman spectra of a reference signal and a test signal, the reference signal being based on a measurement from a surface of the pellicle and/or a reticle and the test signal being based on the illuminated surface of the pellicle, and a processor. The processor can be configured to determine a difference between the Raman spectra of the reference signal and the test signal and identify a presence of a contaminant on the surface of the pellicle in response to detecting a deviation in the Raman spectra of the reference signal and the test signal.
An augmented reality (AR) headset includes one or more sensors and a processor coupled to the one or more sensors. The one or more sensors may be configured to scan a surface of an object during an inspection. The processor may be configured to process, in real-time during the inspection, information obtained using the one or more sensors. The processor may be further configured to determine, based on the processed information, whether a contaminant is present on the surface of the object. And, the processor may be further configured to, in response to determining that the contaminant is present on the surface of the object, display a image of the contaminant to a user of the AR headset.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/94 - Investigating contamination, e.g. dust
A sensor apparatus includes an illumination system, a detector system, and a processor. The illumination system is con-figured to transmit an illumination beam along an illumination path and includes an adjustable optic. The adjustable optic is configured to transmit the illumination beam toward a diffraction target on a substrate that is disposed adjacent to the illumination system. The transmitting generates a fringe pattern on the diffraction target. A signal beam includes diffraction order sub-beams that are diffracted by the diffraction target. The detector system is configured to collect the signal beam. The processor is configured to measure a char-acteristic of the diffraction target based on the signal beam. The adjustable optic is configured to adjust an angle of incidence of the illumination beam on the diffraction target to adjust a periodicity of the fringe pattern to match a periodicity of the diffraction target.
G01B 11/27 - Measuring arrangements characterised by the use of optical techniques for measuring angles or tapersMeasuring arrangements characterised by the use of optical techniques for testing the alignment of axes for testing the alignment of axes
A patterning device for patterning product structures onto a substrate and an associated substrate patterned using such a patterning device. The patterning device includes target patterning elements for patterning at least one target from which a parameter of interest can be inferred. The patterning device includes product patterning elements for patterning the product structures. The target patterning elements and product patterning elements are configured such that the at least one target has at least one boundary which is neither parallel nor perpendicular with respect to the product structures on the substrate.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
87.
METHODS AND APPARATUSES FOR SPATIALLY FILTERING OPTICAL PULSES
An optical filter apparatus comprising an optical divergence device, operable to receive optical pulses and spatially distribute the optical pulses over an optical plane in dependence with a pulse energy of each of the optical pulses; and a spatial filter, located at said optical plane, operable to apply spatial filtering to the optical pulses based on a location of each of the optical pulses at the optical plane resulting from the spatial distributing.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
G01N 21/00 - Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
G03F 1/22 - Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masksPreparation thereof
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
G03F 1/64 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof characterised by the frames, e.g. structure or material thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
89.
MULTI-CHANNEL LIGHT SOURCE FOR PROJECTION OPTICS HEATING
Systems, apparatuses, and methods are provided for heating a plurality of optical components. An example method can include receiving an input radiation beam from a radiation source. The example method can further include generating a plurality of output radiation beams based on the input radiation beam. The example method can further include transmitting the plurality of output radiation beams towards a plurality of heater head optics configured to heat the plurality of optical components. Optionally, the example method can further include controlling a respective power value, and realizing a flat-top far-field profile, of each of the plurality of output radiation beams.
Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include irradiating, by a radiation source, a portion of a finger assembly with radiation. The example method can further include receiving, by a radiation detector, at least a portion of the radiation in response to the irradiating of the portion of the finger assembly. The example method can further include determining, by a processor, a change in a shape of the finger assembly based on the received radiation. The example method can further include generating, by the processor, a control signal configured to modify a position of the finger assembly based on the determined change in the shape of the finger assembly. Subsequently, the example method can include transmitting, by the processor, the control signal to a motion control system coupled to the finger assembly.
An electrostatic clamp and a method for fabricating the same. The electrostatic clamp includes a first stack and a second stack, wherein the first stack is joined with the second stack. Each of the first and second stacks includes a clamp body, one or more electrodes disposed on the clamp body, a dielectric plate disposed on the electrodes, and a plurality of channels inside the clamp body.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
92.
SYSTEMS AND METHODS FOR MEASURING INTENSITY IN A LITHOGRAPHIC ALIGNMENT APPARATUS
A metrology system includes a radiation source, an adjustable diffractive element, an optical system, an optical element, and a processor. The radiation source generates radiation. The adjustable diffractive element diffracts the radiation to generate first and second beams of radiation. The first and second beams have first and second different non-zero diffraction orders, respectively. The optical system directs the first and second beams toward a target structure such that first and second scattered beams of radiation are generated based on the first and second beams, respectively. The metrology system adjusts a phase difference of the first and second scattered beams. The optical element interferes the first and second scattered beams at an imaging detector that generates a detection signal. The processor receives and analyzes the detection signal to determine a property of the target structure based on the adjusted phase difference.
A self-referencing interferometer (SRI) system for an alignment sensor apparatus includes a first prism and a second prism. The first prism has an input surface for an incident beam. The second prism is coupled to the first prism and has an output surface for a recombined beam. The recombined beam includes a first image and a second image rotated by 180 degrees with respect to the first image. The first and second prisms are identical in shape. A dual self-referencing interferometer (DSRI) system for an alignment sensor apparatus includes a first prism assembly having an input surface for a first incident beam and a second incident beam, and a second prism assembly coupled to the first prism assembly and having an output surface for a first recombined beam and a second recombined beam. The first and second prism assemblies are identical in shape.
Van De Ven, Bastiaan, Lambertus, Wilhelmus, Marinus
Poiesz, Thomas
Levasier, Leon, Martin
Overkamp, Jim, Vincent
Pijnenburg, Johannes, Adrianus, Cornelis, Maria
Van Berkel, Koos
Diguido, Gregory, James
Socci, Jr., Anthony, C.
Sigal, Iliya
Lomans, Bram, Antonius, Gerardus
Habets, Michel, Ben, Isel
Abstract
Systems, apparatuses, and methods are provided for manufacturing a substrate table. An example method can include forming a vacuum sheet including a plurality of vacuum connections and a plurality of recesses configured to receive a plurality of burls disposed on a core body for supporting an object such as a wafer. Optionally, at least one burl can be surrounded, partially or wholly, by a trench. The example method can further include using the vacuum sheet to mount the core body to an electrostatic sheet including a plurality of apertures configured to receive the plurality of burls. Optionally, the example method can include using the vacuum sheet to mount the core body to the electrostatic sheet such that the plurality of recesses of the vacuum sheet line up with the plurality of burls of the core body and the plurality of apertures of the electrostatic sheet.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
95.
Lithographic apparatus and illumination uniformity correction system
An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.
A method of fabricating a substrate table includes supporting a table base and disposing a coating on a surface of the table base. The surface of the table base is substantially flat. The coating has a non-uniform thickness. The coating exerts a stress on the table so as to bend the table base. The non-uniform thickness causes a surface of the coating to become substantially flat after the bending.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
97.
LITHOGRAPHIC APPARATUS, METROLOGY SYSTEMS, AND METHODS THEREOF
A method includes irradiating a target structure with sequential illumination shots, directing scattered beams from the target structure towards an imaging detector, generating a detection signal using the imaging detector, and determining a property of the target structure based on at least the detection signal. An integration time for each illumination shot of the sequential illumination shots is selected so to reduce a low frequency error.
A reticle stage cleaning apparatus for a reticle stage in a lithographic apparatus includes a substrate having a frontside and a backside opposite the frontside and a conductive layer disposed on the frontside of the substrate. The conductive layer is configured to contact the reticle stage to dissipate charge on the reticle stage and to remove particles on the reticle stage via an electrostatic field generated between the conductive layer and the reticle stage. The substrate can include a plurality of grooves and the conductive layer can be disposed on the frontside of the substrate and on a bottom surface of the plurality of grooves. The reticle stage cleaning apparatus can include a second conductive layer configured to remove particles on the reticle stage via a second electrostatic field and be disposed atop the conductive layer in the bottom surface of the plurality of grooves.
A metrology system (400) includes a multi-source radiation system. The multi-source radiation system includes a waveguide device (502) and the multi-source radiation system is configured to generate one or more beams of radiation. The metrology system (400) further includes a coherence adjuster (500) including a multimode waveguide device (504). The multimode waveguide device (504) includes an input configured to receive the one or more beams of radiation from the multi-source radiation system (514) and an output (518) configured to output a coherence adjusted beam of radiation for irradiating a target (418). The metrology system (400) further includes an actuator (506) coupled to the waveguide device (502) and configured to actuate the waveguide device (502) so as to change an impingement characteristic of the one or more beams of radiation at the input of the multimode waveguide device (504).
The system includes a radiation source, a diffractive element, an optical system, a detector, and a processor. The radiation source generates radiation. The diffractive element diffracts the radiation to generate a first beam and a second beam. The first beam includes a first non-zero diffraction order and the second beam includes a second non-zero diffraction order that is different from the first non-zero diffraction order. The optical system receives a first scattered beam and a second scattered radiation beam from a target structure and directs the first scattered beam and the second scattered beam towards a detector. The detector generates a detection signal. The processor analyzes the detection signal to determine a target structure property based on at least the detection signal. The first beam is attenuated with respect to the second beam or the first scattered beam is purposely attenuated with respect to the second scattered beam.
patents
