Provided is a blank mask, including an optical substrate including a light-transmitting substrate and a light-shielding film disposed on the light-transmitting substrate, and a photoresist layer disposed on the optical substrate. The photoresist layer includes 49 regions that are divided into 7 regions arranged at regular intervals in a horizontal direction and 7 regions arranged at regular intervals in a vertical direction, wherein the 49 regions include a first region corresponding to a center of the optical substrate; second regions arranged along a periphery of the first region; third regions arranged along a periphery of the second regions; and fourth regions corresponding to an outer edge of the optical substrate, wherein a density of optical irregularities in the fourth regions is greater than a density of optical irregularities in the first region, the second regions and the third regions.
Provided is a method of fabricating a blank mask, the method including forming a light-shielding film on a light-transmissive substrate to form an optical substrate; preparing a nozzle for spraying a photoresist resin composition onto the optical substrate; filling the nozzle with the photoresist resin composition and maintaining a state where the photoresist resin composition is filled inside the nozzle; removing the photoresist resin composition inside the nozzle; and forming a photoresist layer on the light-shielding film using the nozzle.
A method of fabricating a blank mask. The method includes forming a light-shielding film on a light-transmissive substrate to form an optical substrate; forming a photoresist layer on the light-shielding film; and removing droplets, generated in the forming of the photoresist layer, from a side surface of the light-transmissive substrate, wherein the number of droplet-type adsorption, derived from the droplets, on the side surface of the light-transmissive substrate, is less than 3 per cm2.
A method of fabricating a blank mask, the method including: forming a light-shielding film on a light-transmissive substrate; and cleaning the light-shielding film with a cleaning solution, wherein in the cleaning, the light-shielding film has a thickness change of less than 5 nm. The blank mask may include a light-transmissive substrate and a light-shielding film disposed on the light-transmissive substrate. Further, on an entire surface of the blank mask, a content of halogen ions is less than 0.05 ng/cm2, a content of nitrogen-based ions is less than 2 ng/cm2, and a content of sulfur-based ions is less than 0.1 ng/cm2. The blank mask may be a photomask.
A blank mask including a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The phase shift film has XRD maximum peak at 2θ of 15° to 30° when normal mode XRD analysis is performed on an upper surface of the phase shift film. The transparent substrate has XRD maximum peak at 2θ of 15° to 30° when performing normal mode XRD analysis on a lower surface of the transparent substrate. AI1 value of the blank mask expressed by below Equation is 0.9 to 1.1.
1
XM1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on upper surface of the phase shift film. XQ1 is the maximum value of the measured X-ray intensity when the normal mode XRD analysis is performed on the lower surface of the transparent substrate.
Disclosed is an apparatus for fabricating a blank mask, the apparatus including: a chamber; and a rotatable chuck placed inside the chamber, wherein the rotatable chuck includes: a support part configured to support an optical substrate placed on the support part; and a guide part disposed on a side of the optical substrate and connected to the support part, wherein an interval between the guide part and a side surface of the optical substrate is greater than 0 mm and less than 1 mm.
Disclosed is an apparatus for fabricating a blank mask, the apparatus including: a chamber; and a rotatable chuck placed inside the chamber, wherein the rotatable chuck includes: a support part configured to support an optical substrate placed on the support part; a guide part disposed on a side of the optical substrate and connected to the support part; and an air pump for spraying compressed air to a space between a side surface of the optical substrate and the guide part.
G03F 1/32 - Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portionPreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A blank mask includes a light-transmitting substrate; and a light-shielding film, disposed on the light-transmitting substrate, including a first light-shielding layer and a second light-shielding layer disposed on the first light-shielding layer. The second light-shielding layer includes at least one of a transition metal, oxygen, or nitrogen, or any combination thereof. A reflectance of a surface of the light-shielding film with respect to light having a wavelength of 193 nm is 20% or more and 40% or less. A hardness value of the second light-shielding layer is 0.3 kPa or more and 0.55 kPa or less.
G03F 1/50 - Mask blanks not covered by groups Preparation thereof
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
A blank mask includes a light transmissive substrate and a multilayer comprising a light shielding layer and a phase shift layer disposed between the light transmissive substrate and the light shielding layer. The phase shift layer includes an upper surface facing the light shielding layer and a side surface connected to the upper surface, such that the light shielding layer is disposed on the upper surface and the side surface of the phase shift layer. When viewed from a top surface of the multilayer, the multilayer includes a central portion and an outer portion surrounding the central portion. The outer portion has a curved upper surface, which greatly suppresses damage to the phase shift layer by a cleaning solution and effectively reduces a frequency of particle generation at edges of the phase shift layer and the light shielding layer.
A blank mask includes a light transmissive substrate, and a light-blocking layer, disposed on the light transmissive substrate, comprising a transition metal and either one or both of oxygen and nitrogen. An average value of grain sizes of a surface of the light-blocking layer ranges from 14 nm to 24 nm.
A shadow mask includes a mask including one surface, another surface, and an opening that passes from one surface to the other, and a shutter provided on the one surface of the mask and configured to adjust a size of the opening, wherein the shutter is configured to move from an edge to a center of the opening to adjust the size of the opening, and the shadow mask is applied in manufacturing a blank mask for a semiconductor lithography process.
G03F 1/38 - Masks having auxiliary features, e.g. special coatings or marks for alignment or testingPreparation thereof
G03F 1/68 - Preparation processes not covered by groups
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A blank mask includes a light-transmitting substrate; and a light-shielding film on the light-transmitting substrate. The light-shielding film includes a transition metal and oxygen, and a scum formation time required to generate scum is 120 minutes or more when light with a wavelength of 172 nm and an intensity of 10 kJ/cm2 is applied on the light-shielding film.
An extreme ultraviolet photomask includes a conductive layer; a substrate disposed on the conductive layer; a multilayer, comprising different metals alternately stacked on the substrate; a protective layer disposed on the multilayer; a low-reflectance part disposed on a portion of the protective layer, wherein the low-reflectance part comprises a first absorbent layer disposed on the portion of the protective layer, a low-reflectance layer formed on the first absorbent layer, and a first intagliated part formed at the portion where the protective layer is exposed; and a high-reflectance part disposed on another portion of the protective layer, wherein the high-reflectance part comprises a second absorbent layer disposed on the other portion of the protective layer, a high-reflectance layer disposed on the second absorbent layer, and a second intagliated part formed at the other where the protective layer is exposed.
A blank mask includes a transparent substrate and a light shielding film disposed on the transparent substrate. A surface of the light shielding film has a controlled power spectrum density value at a spatial frequency of 1 μm−1 to 10 μm−1. The surface of the light shielding film has a controlled minimum power spectrum density value at the spatial frequency of 1 μm−1 to 10 μm−1. An Rq value of the surface of the light shielding film is 0.25 nm to 0.55 nm.
The method of preparing a laminate includes: preparing a process target, which is a laminate before being processed, where a light-shielding film has been disposed; and preparing a cleaned laminate through a first cleaning including applying UV rays and carbonated water to the process target, wherein the light-shielding film includes a transition metal and an element selected from the group consisting of oxygen, nitrogen, and carbon.
A method and apparatus for forming a layer including a light transmitting substrate, and a light shielding film disposed on the light transmitting substrate, and a phase shift film disposed between the light transmitting substrate and the light shielding film. A center measuring area based on the center of the light shielding film and an edge measuring area being distant by 20 mm from the edge of the light shielding film. The center measuring area and the edge measuring area are respectively squares having a side of 20 μm.
dR=Rac−Rbc [Equation 1]
The Rac is a surface roughness [unit: nm] measured from the measuring range of the part of the multilayer light shielding film, after the part of the multilayer light shielding film are soaked for 800 seconds in SC-1 (Standard Clean-1) solution and rinsed by ozone water.
The Rbc is a surface roughness [unit: nm] measured from the measuring range of the part of the multilayer light shielding film before the part of the multilayer light shielding film are soaked in the SC-1 solution.
2O of 71.4 wt %.
The ozone water is a solution comprising ozone in an amount of 20 ppm (by weight) with ultrapure water as a solvent.
In such a case, during an enhanced cleaning, the multilayer light shielding film can have excellent durability against a cleaning solution in all the areas thereof.
A blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film comprises a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein when an optical density of the light shielding film is measured ten times by a light with a wavelength of 193 nm, a standard deviation of measured optical density is 0.009 or less, is disclosed.
A blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, and wherein a surface of the light shielding film has a first contact angle of 40° to 45° measured by using diiodo-methane as a first liquid contacting the surface of the light shielding film, is disclosed.
A method of cleaning a substrate for a blank mask including: a first cleaning including irradiating a cleaning target substrate with a pre-treatment light to prepare a substrate cleaned with light, and a second cleaning including applying a first cleaning solution and a post-treatment light to the substrate cleaned with light to prepare the substrate for the blank mask, is disclosed.
B08B 7/00 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
B08B 7/04 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
B08B 3/10 - Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
Disclosed is a blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, wherein when a surface of the light shielding film includes nine sectors formed by trisecting the surface of the light shielding film vertically and horizontally, each of the nine sectors has a Rsk value, respectively, and an average value of the Rsk values of the nine sectors is equal to −0.64 or more and less than or equal to 0, where Rsk value is a height symmetry of the surface of the light shielding film measured in accordance with ISO_4287, and wherein an average value of Rku values, which are kurtosis of the surface of the light shielding film measured in accordance with ISO_4287, of the nine sectors is 3 or less.
A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1:
A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1:
SA1=γSL×tan θ [Equation 1-1]
A blank mask including: a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one of oxygen and nitrogen, and wherein the light shielding film has an SA1 value of 60 to 90 mN/m according to Equation 1-1:
SA1=γSL×tan θ [Equation 1-1]
where, in the Equation 1-1, the γSL is an interfacial energy between the light shielding film and a pure water and θ is a contact angle of the light shielding film measured with the pure water, is disclosed.
1 [Equation 1]
1 value is an etching rate of the first light shielding layer measured by etching with argon gas.
2 value is an etching rate of the second light shielding layer measured by etching with argon gas.
In such a blank mask, a resolution degradation can be suppressed effectively when the light shielding film is patterned.
where, in the Equation 1, |Rsk| is an absolute value of an Rsk value, which is a height skewness of the surface of the light shielding film, and Rku is kurtosis of the surface of the light shielding film.
A photomask blank includes a light-transmitting substrate, and a shading layer part disposed on the light-transmitting substrate, the shading layer part including a first shading layer having a first hardness and a second shading layer having a second hardness. The first shading layer is disposed closer to the light-transmitting substrate than the second shading layer, and a value of the first hardness is larger that a value of the second hardness.
The present disclosure relates to a blank mask and the like, and comprises a transparent substrate, a phase shift film disposed on the transparent substrate, and a light shielding film disposed on the phase shift film. The blank mask has a TFT1 value of 0.25 μm/100° C. or less expressed by Equation 1 below:
where, when the thermal variation of the processed blank mask, which is formed by processing the thickness of the transparent substrate of the blank mask to be 0.6 mm and removing the light shielding film, is analyzed in a thermomechanical analyzer, the measuring temperature of the thermomechanical analyzer is increased from T1 to T2, and ΔPM is a position change of the upper surface of the phase shift film in the thickness direction at T2, based on a position of the upper surface of the phase shift film at T1.
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