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2012
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Invention
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Procedure for in-situ determination of thermal gradients at the crystal growth front. A method an... |
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2010
|
Invention
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Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process. An ... |
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2009
|
Invention
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Method for correcting speed deviations between actual and nominal pull speed during crystal growt... |
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|
Invention
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Method and apparatus for controlling the growth process of a monocrystalline silicon ingot. The p... |
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2008
|
Invention
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Reversed action diameter control in a semiconductor crystal growth system.
A semiconductor cryst... |
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2002
|
Invention
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Enhanced n-type silicon material for epitaxial wafer substrate and method of making same. An enha... |
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2001
|
Invention
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Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method the... |
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|
Invention
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Linearity measuring apparatus for wafer orientation flat. Straight tracks are formed in a first d... |
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2000
|
G/S
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Semiconductor material, namely doped and un doped silicon wafers and ingots |
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1999
|
Invention
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Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating elect... |
|
1998
|
Invention
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Continuously fed single bubbler for epitaxial deposition of silicon. A delivery system and method... |
