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2015
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Invention
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Iii-nitride device with improved transconductance.
A III-Nitride device has a back-gate disposed... |
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Invention
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Semiconductor package with integrated heat spreader.
In one implementation, a semiconductor pack... |
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Invention
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Group iii-v transistor utilizing a substrate having a dielectrically-filled region.
There are di... |
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Invention
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Group iii-v transistor with voltage controlled substrate.
There are disclosed herein various imp... |
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Invention
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Group iii-v lateral transistor with backside contact.
There are disclosed herein various impleme... |
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Invention
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Group iii-v hemt having a diode controlled substrate.
There are disclosed herein various impleme... |
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Invention
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Group iii-v device including a shield plate.
There are disclosed herein various implementations ... |
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Invention
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Power semiconductor device with low rdson and high breakdown voltage.
A semiconductor structure ... |
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2014
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Invention
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Power semiconductor package with non-contiguous, multi-section conductive carrier. In one impleme... |
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Invention
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Iii-nitride heterojunction device.
A III-nitride power semiconductor device that includes a plur... |
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2012
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Invention
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Nested composite diode.
There are disclosed herein various implementations of nested composite d... |
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2011
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Invention
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Semiconductor package with reduced on-resistance and top metal spreading resistance with applicat... |
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2010
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Invention
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Buck converter with iii-nitride switch for substantially increased input-to-output voltage ratio.... |
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2008
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Invention
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Variable threshold trench igbt with offset emitter contacts. A trench type IGBT as disclosed here... |
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Invention
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Interposer for an integrated dc-dc converter. An interposer electrical interface for placing a DC... |
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Invention
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Ground fault detection circuit for use in high voltage motor drive applications. An integrated gr... |
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Invention
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Automotive hid headlamp ballast control ic. A ballast control integrated circuit for a ballast dr... |
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Invention
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Enhancement mode iii-nitride semiconductor device with reduced electric field between the gate an... |
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Invention
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Iii-nitride device semiconductor device with reduced electric field between gate and drain. A con... |
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Invention
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Iii-nitride device with back-gate and field plate for improving transconductance. A III-Nitride d... |
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Invention
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Switched mode power converter with over temperature detection. An over temperature detector circu... |
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Invention
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Active clamp for semiconductor device. An active clamp circuit for avalanching and clamping volta... |
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Invention
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Three chip package.
A multi-chip package that includes two power semiconductor devices coupled i... |
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Invention
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Ballast control ic with minimal internal and external components. A ballast controller integrated... |
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Invention
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Dc brushed motor drive with circuit to reduce di/dt and emi. A gate driver for performing gate sh... |
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Invention
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Double stage compact charge pump circuit. A charge pump circuit comprising a plurality of charge ... |
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Invention
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Iii-nitride device. A III-nitride device that includes a silicon body having formed therein an in... |
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Invention
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Negative n-epi biasing sensing and high side gate driver output spurious turn-on prevention due t... |
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Invention
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Gate driving scheme for depletion mode devices in buck converters. A circuit for driving a switch... |
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Invention
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Current sensing bi-directional switch and plasma display driver circuit. A discharge sustain driv... |
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Invention
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Charge circuit for optimizing gate voltage for improved efficiency. A charge circuit for providin... |
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Invention
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Iii-nitride heterojunction device. A IH-nitride heterojunction semiconductor device having a Hi-n... |
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Invention
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Digital pwm modulator with fast dynamic response and fine resolution. A pulse width (PWM) control... |
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Invention
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Level shift circuit with improved dv/dt sensing and noise blocking. A level shift circuit in acco... |
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Invention
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Method of forming ohmic contact to a semiconductor body.
A process for forming an ohmic contact ... |
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Invention
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Harmonic processor. A harmonic processor receiving an input signal and providing an output signal... |
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Invention
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Audible noise reduction for single current shunt platform. A method for reducing Audible noise in... |
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Invention
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Dead time trimming in a co-package device.
A method of obtaining an optimized dead time for a sy... |
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Invention
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Trench mosgated device with deep trench between gate trenches. A trench gated MOSFET especially f... |
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Invention
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Semiconductor package. A semiconductor package that includes a substrate having a metallic back p... |
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Invention
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Digital current sense. A circuit for measu꧀ng a current in an output inductor of at least one swi... |
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Invention
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Mosfet device having improved avalanche capability. A power MOSFET that includes deep source fiel... |
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Invention
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Iii-nitride semiconductor device. A ꧀i-nitride semiconductor device which includes a barrier body... |
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Invention
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Integrated iii-nitride power converter circuit. An integrated circuit that includes a power stage... |
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Invention
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Termination trench structure for mosgated device and process for its manufacture. A process for f... |
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Invention
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Iii-nitride power device with reduced qgd. A III-nitride power switch that includes a III-nitride... |
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Invention
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Active area shaping for iii-nitride device and process for its manufacture. A Ill-nitride heteroj... |
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2007
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Invention
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Clock generator including a ring oscillator with precise frequency control.
A clock generator fo... |
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Invention
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One cycle control pfc circuit with dynamic gain modulation. A one cycle control power factor corr... |
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Invention
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Liquefying and storing a gas. Apparatus and methods for improving the safety and efficiency and d... |
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1997
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G/S
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Semiconductors. |
