Abrégé

Provided is (1‐x‐y)Pb(In1/2Nb1/2)O3‐yPb(Mg1/3Nb2/3)O3‐xPbTiO3, which is doped with Mn and Fe and prepared using an improved Bridgman method, wherein 0.15≤1‐x‐y≤0.38, 0.36≤y≤0.57, and 0.26≤x≤0.30, the crystallographic direction is [111], and the Curie temperature thereof is improved greatly compared with that of a relaxation ferroelectric single crystal (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 which is doped with Mn.

Classes IPC  ?

• C30B 29/22 - Oxydes complexes
• C30B 29/32 - TitanatesGermanatesMolybdatesTungstates
• C30B 29/30 - NiobatesVanadatesTantalates
• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
• H01L 37/02 - Dispositifs thermoélectriques sans jonction de matériaux différents; Dispositifs thermomagnétiques, p.ex. utilisant l'effet Nernst-Ettinghausen; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives utilisant le changement thermique de la constante diélectrique, p.ex. en opérant au-dessus et en-dessous du point de Curie

Abrégé

A process method for inhibiting the crack formation and cracking of a manganese doped pyroelectric monocrystalline, wherein the chemical composition of the manganese doped pyroelectric monocrystalline is Mn-(1-x-y)Pb(In 1/2Nb 1/2)O 3-yPb(Mg 1/3Nb 2/3)O 3-xPbTiO 3, wherein x＝0.35-0.42, y＝0.30-0.45, 1-x-y＝0.20-0.29, and the doping level of Mn is 0-5.0%. The preparation method for the material is an improved Bridgman method, comprising the processes of synthesizing a raw material, warming and melting, seeding with a crystal seed and crystal growing. The method overcomes the disadvantages of easy crack formation on a crystal and crystal cracking because of the Mn doping in the prior art, and provides an implementation method for preparing a large size pyroelectric monocrystalline with a high quality, and increasing the yield and performance reliability.

Classes IPC  ?

• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
• C30B 29/22 - Oxydes complexes
• C30B 29/32 - TitanatesGermanatesMolybdatesTungstates

Abrégé

Disclosed is a method for preparing a large-size high-homogeneity manganese-doped pyroelectric single crystal. The chemical composition of the manganese-doped pyroelectric single crystal is as follows: Mn-(1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3, wherein x＝0.35-0.42, y＝0.30-0.45, and 1-x-y＝0.20-0.29. The doping amount of Mn is 0-5%. The preparation method for the material is an improved Bridgman method, which comprises raw material synthesis, seed crystal selection, growth process control, defect regulation and control, etc. The present invention overcomes the disadvantages in the prior art that it is difficult to dope the Mn element, the crucible easily leaks, and a defect is easily generated in the [001] direction, and provides an implementation method for the industrial growth of large-size pyroelectric single crystals.

Classes IPC  ?

• C30B 29/22 - Oxydes complexes
• C30B 29/32 - TitanatesGermanatesMolybdatesTungstates
• C30B 29/30 - NiobatesVanadatesTantalates
• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
• H01L 37/02 - Dispositifs thermoélectriques sans jonction de matériaux différents; Dispositifs thermomagnétiques, p.ex. utilisant l'effet Nernst-Ettinghausen; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives utilisant le changement thermique de la constante diélectrique, p.ex. en opérant au-dessus et en-dessous du point de Curie

Abrégé

Provided is an Mn doped (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 prepared by an improved Bridgman method, in which 0.20≤1-x-y≤0.29, 0.30≤y≤0.45, and 0.35≤x≤0.42, and the Curie temperature of which is greatly enhanced compared with that of an Mn doped relaxation ferroelectric single crystal (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3.

Classes IPC  ?

• C30B 29/22 - Oxydes complexes
• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
• C30B 29/32 - TitanatesGermanatesMolybdatesTungstates

Abrégé

Provided is a pyroelectric relaxor ferroelectric infrared detector. The detector comprises: a base provided with a pin; a casing having one or a plurality of windows, the casing being packaged together with the base to form an accommodating space; a sensitive element chip arranged within the accommodating space; electrodes respectively arranged on an upper surface and a lower surface of a pyroelectric relaxor ferroelectric single crystal sensitive element; an absorption layer covering the upper surface of the single crystal sensitive element; a frame supporting the single crystal sensitive element; an amplification circuit using a voltage mode or a current mode. An upper electrode arranged on the upper surface is a single electrode, and a lower electrode arranged on the lower surface comprises a left electrode and a right electrode separated from one another. The left electrode and the right electrode are not connected to one another to form the lower electrode as a divided electrode. Therefore, dielectric noise of device preparation is reduced, and the response rate and specific detectivity of the detector is increased.

Classes IPC  ?

• H01L 37/02 - Dispositifs thermoélectriques sans jonction de matériaux différents; Dispositifs thermomagnétiques, p.ex. utilisant l'effet Nernst-Ettinghausen; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives utilisant le changement thermique de la constante diélectrique, p.ex. en opérant au-dessus et en-dessous du point de Curie

Abrégé

Provided is a sensitive element chip, comprising one or a plurality of pyroelectric relaxor ferroelectric single crystal sensitive elements. An upper and a lower surface of the pyroelectric relaxor ferroelectric single crystal sensitive element are respectively provided with electrodes. An upper electrode arranged on the upper surface is a single electrode, and a lower electrode arranged on the lower surface comprises a left electrode and a right electrode separated from one another. The left electrode and the right electrode are not connected to one another to form the lower electrode as a divided electrode. The present invention reduces dielectric loss and the capacitance of the sensitive element, the pyroelectric coefficient is higher, and the response rate and specific detectivity of a device prepared using the sensitive element chip are increased.

Classes IPC  ?

• H01L 37/02 - Dispositifs thermoélectriques sans jonction de matériaux différents; Dispositifs thermomagnétiques, p.ex. utilisant l'effet Nernst-Ettinghausen; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives utilisant le changement thermique de la constante diélectrique, p.ex. en opérant au-dessus et en-dessous du point de Curie

Abrégé

A thinning method for a pyroelectric relaxor ferroelectric single crystal, comprising rough grinding being performed on a first surface of a single crystal and chemical mechanical polishing being performed on the rough-ground first surface, rough grinding being performed on a second surface of the single crystal and chemical mechanical polishing being performed on the rough-ground second surface, wet etching being performed on the ground single crystal, and high temperature annealing treatment being performed on the etched single crystal. A combination of grinding, etching and annealing is used, attaining effective thinning of pyroelectric relaxor ferroelectric single crystal material, and ensuring the performance of the material after thinning.

Classes IPC  ?

• H01L 37/02 - Dispositifs thermoélectriques sans jonction de matériaux différents; Dispositifs thermomagnétiques, p.ex. utilisant l'effet Nernst-Ettinghausen; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives utilisant le changement thermique de la constante diélectrique, p.ex. en opérant au-dessus et en-dessous du point de Curie
• C30B 29/30 - NiobatesVanadatesTantalates
• C30B 29/32 - TitanatesGermanatesMolybdatesTungstates

Abrégé

Provided is a pyroelectric relaxor ferroelectric single crystal infrared detector. The detector comprises: a base provided with a pin; a casing having a window, the casing being packaged together with the base to form an accommodating space; a sensitive element (7) arranged within the accommodating space, the sensitive element being made from a relaxor ferroelectric single crystal; upper electrodes (5, 6) and a lower electrode (8) respectively arranged on an upper surface of the sensitive element and a lower surface of the sensitive element; an absorption layer (9) covering the upper electrodes of the sensitive element; a frame (3) supporting the sensitive element; an amplification circuit connected to the sensitive element. The present detector has advantages such as a high response rate, low noise and a high detection rate.

Classes IPC  ?

• H01L 37/02 - Dispositifs thermoélectriques sans jonction de matériaux différents; Dispositifs thermomagnétiques, p.ex. utilisant l'effet Nernst-Ettinghausen; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives utilisant le changement thermique de la constante diélectrique, p.ex. en opérant au-dessus et en-dessous du point de Curie

Abrégé

A polarisation method for a sensitive element chip. The sensitive element chip comprises one or a plurality of pyroelectric relaxor ferroelectric single crystal sensitive elements. An upper and a lower surface of the pyroelectric relaxor ferroelectric single crystal sensitive element are respectively provided with electrodes. An upper electrode arranged on the upper surface is a single electrode, and a lower electrode arranged on the lower surface comprises a left electrode and a right electrode separated from one another. The left electrode and the right electrode are not connected to one another to form the lower electrode as a divided electrode. The left electrode is connected to a positive end of a power source, the right electrode is connected to a negative end of the power source, and the upper electrode is grounded. Via the present polarisation method, full use may be made of the advantages of distributed electrodes, dielectric loss and the dielectric constant may be reduced, and high temperature polarisation may be performed.

Classes IPC  ?

• H01L 37/02 - Dispositifs thermoélectriques sans jonction de matériaux différents; Dispositifs thermomagnétiques, p.ex. utilisant l'effet Nernst-Ettinghausen; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives utilisant le changement thermique de la constante diélectrique, p.ex. en opérant au-dessus et en-dessous du point de Curie

Abrégé

A post-treatment method for a pyroelectric relaxor ferroelectric single crystal, sequentially comprising grinding and chemical mechanical polishing being successively carried out on a first surface of a single crystal, grinding and chemical mechanical polishing being successively carried out on a second surface opposite the first surface, wet etching being performed on the single crystal, and annealing treatment being carried out on the wet-etched single crystal. Defects and surface stress produced in grinding steps of the single crystal are removed, dielectric loss and dielectric noise of the single crystal are reduced, and the detection performance of a pyroelectric relaxor ferroelectric single crystal detector is improved.

Classes IPC  ?

• H01L 41/187 - Compositions céramiques
• H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
• H01L 21/477 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
• C30B 29/32 - TitanatesGermanatesMolybdatesTungstates

Abrégé

The present invention provides the methods to fabricate thallium doped cesium iodide (CsI:Tl) scintillators with high light yield and reduced afterglow,the scintillators prepared according to the disclosed method,and their applications in radiation detection.

Classes IPC  ?

• C30B 29/12 - Halogénures
• G01T 1/202 - Mesure de l'intensité de radiation avec des détecteurs à scintillation le détecteur étant du cristal

Abrégé

An optically controlled silicon carbide (SiC) photoconductive switch is provided. The switch comprises a photoconductive wafer and electrodes. The photoconductive wafer is a silicon carbide wafer, and has following well-polished crystal planes: at least one (100) m plane, at least two (110) a planes, wherein the (100) m plane or the (110) a planes are planes towards light and optically connected to an initiated optical source, and the electrodes have good electricity performance with the (110) a planes or the (100) m plane. When the (100) m plane is used as the plane towards light, the electrodes electrically connect to the (110) a planes; and when the (110) a planes are used as the planes towards light, the electrodes electrically connect to the (100) m plane.

Classes IPC  ?

• H01L 31/101 - Dispositifs sensibles au rayonnement infrarouge, visible ou ultraviolet
• H01L 31/0224 - Electrodes
• H01L 31/036 - Dispositifs à semi-conducteurs sensibles aux rayons infrarouges, à la lumière, au rayonnement électromagnétique d'ondes plus courtes, ou au rayonnement corpusculaire, et spécialement adaptés, soit comme convertisseurs de l'énergie dudit rayonnement e; Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de ces dispositifs ou de leurs parties constitutives; Leurs détails caractérisés par leurs corps semi-conducteurs caractérisés par leur structure cristalline ou par l'orientation particulière des plans cristallins

Abrégé

An apparatus with two-chamber structure for growing silicon carbide (SiC) crystals is disclosed. The apparatus comprises a sample feed chamber and a crystal growth chamber, both of which are separately connected with each other by a vacuum baffle valve and connected with a vacuum system. The crystal growth apparatus ensures that the insulation materials in the crystal growth chamber cannot contact with air, minimizes the adsorption of nitrogen and pollutants on the insulation materials and the growth chamber, improves purity of SiC crystals and achieves precise control of the impurities so that growth of high-quality SiC crystals such as conductive, doped semi-insulating or high-purity semi-insulating SiC crystals and the like is enabled.

Classes IPC  ?

• C30B 23/00 - Croissance des monocristaux par condensation d'un matériau évaporé ou sublimé
• C30B 29/36 - Carbures

Abrégé

A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10-13 g/g.

Classes IPC  ?

• C30B 29/46 - Composés contenant du soufre, du sélénium ou du tellure
• C30B 29/16 - Oxydes
• C30B 15/00 - Croissance des monocristaux par tirage hors d'un bain fondu, p. ex. méthode de Czochralski