Research and Development Center, Shanghai Institute of Ceramics

Chine

 
Quantité totale PI 14
Rang # Quantité totale PI 109 034
Note d'activité PI 0/5.0    0
Rang # Activité PI 1 674 025

Brevets

Marques

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Dernier brevet 2016 - Rhombohedral phase pyroelectric ...
Premier brevet 2010 - High-purity tellurium dioxide si...

Derniers inventions, produits et services

2015 Invention Rhombohedral phase pyroelectric relaxation ferroelectric single crystal material and preparation ...
Invention Method for preparing monocrystalline. A process method for inhibiting the crack formation and cra...
Invention Method for preparing pyroelectric single crystal. Disclosed is a method for preparing a large-siz...
Invention Tetragonal pyroelectric relaxor ferroelectric single crystal material and preparation method ther...
Invention Pyroelectric relaxor ferroelectric infrared detector. Provided is a pyroelectric relaxor ferroele...
Invention Sensitive element chip. Provided is a sensitive element chip, comprising one or a plurality of py...
Invention Thinning method for pyroelectric relaxor ferroelectric single crystal. A thinning method for a py...
Invention Pyroelectric relaxor ferroelectric single crystal infrared detector. Provided is a pyroelectric r...
Invention Polarisation method for sensitive element chip. A polarisation method for a sensitive element chi...
Invention Post-treatment method for pyroelectric relaxor ferroelectric single crystal. A post-treatment met...
2014 Invention Ultrabright csi:tl scintillators with reduced afterglow: fabrication and application. The present...
2011 Invention Optically controlled silicon carbide photoconductive switch. An optically controlled silicon carb...
2010 Invention Apparatus with two-chamber structure for growing silicon carbide crystals. An apparatus with two-...
Invention High-purity tellurium dioxide single crystal and manufacturing method thereof. −13 g/g.
Invention High-purity tellurium dioxide single crystal and manufacturing method thereof. A high-purity tell...