Abrégé

An ion source is disclosed which includes a gas reaction chamber. The invention also includes a method of converting a gaseous feed material into a tetramer, dimer, other molecule or atomic species by supplying the feed material to the gas reaction chamber wherein the feed material is converted to the appropriate gas species to be supplied to the ion source and ionized. More particularly, the gas reaction chamber is configured to receive hydride and other feed materials in gaseous form, such as, AsH3 or PH3, and generate various molecular and atomic species for use in ion implantation, heretofore unknown. In one embodiment of the invention, the gas is relatively uniformly heated to provide relatively accurate control of the molecular or atomic species generated. In an alternate embodiment of the invention, the gas reaction chamber uses a catalytic surface to convert the feed gas into the different source gas specie required for implantation, such as, hydrides into tetramer molecules. In yet another embodiment of the invention, the gas reaction chamber is configured so that a catalytic (or pyrolytic) reaction occurs in the presence of an appropriate material including glass or metals such as, W, Ta, Mo.stainless steel, ceramics, boron nitride or other refractory metals, raised to an appropriate temperature.

Classes IPC  ?

• H01J 37/08 - Sources d'ionsCanons à ions
• H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique

Abrégé

The invention provides new methods for synthesis of ClusterBoron (B18H22). Preferred methods of the invention include in situ generation of the conjugate acid of B20H182- and degradation of the acid in solution to produce B18H22 in high yields and high purity. The invention further provides isotopically enriched boranes, particularly isotopically enriched 10B)18H22 and 11B18H22.

Classes IPC  ?

• C01B 6/10 - MonoboraneDiboraneLeurs complexes d'addition

Abrégé

The invention provides new methods for synthesis of ClusterBoronꡞ (B18H22). Preferred methods of the invention include generation of the conjugate acid of B20H182- and degradation of the acid in solution to produce B18H22 in high yields and high purity. The invention further provides isotopically enriched boranes, particularly isotopically enriched 10B18H22 and 11B18H22.

Classes IPC  ?

• C01B 35/00 - BoreSes composés

Abrégé

The invention provides new methods for synthesis of ClusterBoron (B18H22). Preferred methods of the invention include generation of the conjugate acid of B20HI 82- and degradation of the acid in solution to produce B18H22 in high yields and high purity. The invention further provides isotopically enriched boranes, particularly isotopically enriched 10B18H22 and 11B18H22.

Classes IPC  ?

• C01B 6/10 - MonoboraneDiboraneLeurs complexes d'addition

Abrégé

The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

Classes IPC  ?

• B08B 5/00 - Nettoyage par des procédés impliquant l'utilisation d'un courant d'air ou de gaz

Abrégé

An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized carborane cluster ions are implanted into semiconductor substrates to perform doping. of the substrate. The carborane cluster ions have the chemical form C2B10Hx+, C2B8Hx+ and C4B18Hx+ and are formed from carborane cluster molecules of the form C2B10H12,C2B8H10 and C4B18H22 The use of such carborane molecular clusters results in higher doping concentrations at lower implant energy to provide high dose low energy implants. In accordance with one aspect of the invention, the carborane cluster molecules may be ionized by direct electron impact ionization or by way of a plasma.

Classes IPC  ?

• H01J 27/00 - Tubes à faisceau ionique

Abrégé

A new type of triode extraction system, a Cluster Ion Beam Extraction System, is disclosed for broad energy range cluster ion beam extraction applications while still being applicable to atomic and molecular ion species as well. The extraction aperture plate contours are set to minimize the beam cross over and at the same time shield the source from excess extraction electric fields thus allowing smaller values of the extraction gap. In addition, a novel focusing feature is integrated into these new optics which allows the beam to be either focused or de-focused in the non-dispersive plane by using a bipolar bias voltage of only a few kV over a broad range of beam energy. This is a superior solution to a stand-alone electrostatic lens solution, for example an einzel lens, which would require tens of kV of bias voltage in order to be able to focus an energetic beam.

Classes IPC  ?

• H01J 27/00 - Tubes à faisceau ionique

Abrégé

A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion, such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions Dopant ion compounds of the form AnHx+ and AnRzHx+ are used in order to minimize crystal defects as a result of ion implantation

Classes IPC  ?

• H01L 21/425 - Bombardement par des radiations par des radiations d'énergie élevée produisant une implantation d'ions

Abrégé

Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems.

Classes IPC  ?

• C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD]
• G05D 7/00 - Commande de débits

Abrégé

A method of and device for implanting semiconductor wafers with ions of N-type clusters of phosphorus (P) or arsenic (As), where the molecular cluster ions have the chemical form A-HX+o,r A-RHX', where A designates either arsenic or phosphorus, n and x are integers with n greater than or equal to 4, and x greater than or equal to 0, and R is a molecule not containing phosphorus or arsenic and which is not injurious to the implantation process These ions are produced from chemical compounds of the form AnHx and AnRHx.

Classes IPC  ?

• H01L 21/00 - Procédés ou appareils spécialement adaptés à la fabrication ou au traitement de dispositifs à semi-conducteurs ou de dispositifs à l'état solide, ou bien de leurs parties constitutives
• H01L 21/42 - Bombardement par des radiations

Abrégé

Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition.

Classes IPC  ?

• H01J 27/00 - Tubes à faisceau ionique

Abrégé

A vaporizer unit, that heats solid feed material, especially material comprising cluster molecules for semiconductor manufacture, to a temperature that produces vapor to be ionized, has efficient construction and numerous effective safety features. The heater is located in a detachable top closure member, and serves to maintain a valve in the top closure member at temperature higher than the temperature to which the solid material is heated. The top section is a heat distributor to an interface with the bottom section, the side and bottom walls of the bottom distributing heat received from the interface to surfaces of the cavity exposed to the feed material. Locking, access-preventing and effective use of mechanical and electronic coding provide safety. Borane, decarborane, carbon clusters and other large molecules are vaporized for ion implantation. Such vaporizers cooperating with novel vapor delivery systems and with ion sources are shown.

Classes IPC  ?

• H01J 27/00 - Tubes à faisceau ionique

Abrégé

A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling Implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights.

Classes IPC  ?

• G21K 5/10 - Dispositifs d'irradiation pourvus de dispositions permettant un mouvement relatif entre la source du rayonnement et l'objet à irradier

Abrégé

In a magnetic analysis apparatus, high voltage insulation (86, 94) isolates the magnet excitation coil (40), power leads (90) and cooling fluid lines (92) from the ferromagnetic assembly (26, 28, 30, 32, 34) of a sector magnet, and the coil power supply is disposed in a grounded housing (E). A sleeve (94), containing electrical power leads and cooling fluid lines, forms an insulator through the magnet assembly to the coil (40) and the coil is surrounded by electrical insulation providing electrical isolation from the magnet assembly of least 20 KV. The excitation coil comprises alternating coil segments (80) and cooling plates (82) within an impervious cocoon (86) of insulating material of at least 6mm thickness. Yoke and core members (20, 30, 32, 34) of the magnet assembly are disposed outside of the vacuum housing (20) while pole members (28) extend through and are sealed to walls of the vacuum housing. An ion decelerator (60, 61, 62) is in a housing extension at the same voltage potential as the mass analyzer housing.

Classes IPC  ?

• H01J 37/00 - Tubes à décharge pourvus de moyens permettant l'introduction d'objets ou d'un matériau à exposer à la décharge, p. ex. pour y subir un examen ou un traitement

Abrégé

A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight.

Classes IPC  ?

• G21K 5/10 - Dispositifs d'irradiation pourvus de dispositions permettant un mouvement relatif entre la source du rayonnement et l'objet à irradier

Abrégé

Providing vapor to a vapor-receiving device housed in a high vacuum chamber. An ion beam implanter, as an example, has a removable high voltage ion source within a high vacuum chamber and a vapor delivery system that delivers vapor to the ion source and does not interfere with removal of the ion source for maintenance. For delivering vapor to a vapor-receiving device, such as the high voltage ion source under vacuum, a flow interface device is in the form of a thermally conductive valve block. A delivery extension of the interface device automatically connects and disconnects within the high vacuum chamber with the removable vapor receiving device by respective installation and removal motions. In an ion implanter, the flow interface device or valve block and source of reactive cleaning gas are mounted in a non-interfering way on the electrically insulating bushing that insulates the ion source from the vacuum housing and the ion source may be removed without disturbing the flow interface device. Multiple vaporizers for solid material, provisions for reactive gas cleaning, and provisions for controlling flow are provided in the flow interface device.

Classes IPC  ?

• B01D 1/26 - Évaporation à effet multiple

Abrégé

A vaporizer unit to heat solid feed material to a temperature that produces vapor to be ionized, has efficient construction and numerous effective safety features. The heater is located in a detachable top closure member, and serves to maintain a valve in the top closure member at temperature higher than the temperature to which the solid material is heated. The top section is a heat distributor to an interface with the bottom section, the side and bottom walls of the bottom distributing heat received from the interface to surfaces of the cavity exposed to the feed material. Borane, decarborane, carbon clusters and other large molecules are vaporized for ion implantation.

Classes IPC  ?

• H01J 27/00 - Tubes à faisceau ionique

Abrégé

Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems.

Classes IPC  ?

• F16D 49/00 - Freins avec un organe de freinage coopérant avec la périphérie d'un tambour, d'une jante de roue ou d'une pièce analogue

Abrégé

In a magnetic analysis apparatus, high voltage insulation (86, 94) isolates the magnet excitation coil (40), power leads (90) and cooling fluid lines (92) from the ferromagnetic assembly (26, 28, 30, 32, 34) of a sector magnet, and the coil power supply is disposed in a grounded housing (E). A sleeve (94), containing electrical power leads and cooling fluid lines, forms an insulator through the magnet assembly to the coil (40) and the coil is surrounded by electrical insulation providing electrical isolation from the magnet assembly of least 20 KV. The excitation coil comprises alternating coil segments (80) and cooling plates (82) within an impervious cocoon (86) of insulating material of at least 6mm thickness. Yoke and core members (20, 30, 32, 34) of the magnet assembly are disposed outside of the vacuum housing (20) while pole members (28) extend through and are sealed to walls of the vacuum housing. An ion decelerator (60, 61, 62) is in a housing extension at the same voltage potential as the mass analyzer housing.

Classes IPC  ?

• A61N 5/00 - Thérapie par radiations

Abrégé

A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrated circuits. There are two processes which result from this novel approach: (1 ) diffusion control for USJ formation; and (2) high dose carbon implantation for stress engineering. Diffusion control for USJ formation is demonstrated in conjunction with a boron or shallow boron cluster implant of the source/drain structures in PMOS. More particularly, first, a cluster carbon ion, such as C-IeHx+, is implanted into the source/drain region at approximately the same dose as the subsequent boron implant; followed by a shallow boron, boron cluster, phosphorous or phosphorous cluster ion implant to form the source/drain extensions, preferably using a borohydride cluster, such as B18Hx+ or BioHx+. Upon subsequent annealing and activation, the boron diffusion is reduced, due to the gettering of interstitial defects by the carbon atoms.

Classes IPC  ?

• H01L 21/425 - Bombardement par des radiations par des radiations d'énergie élevée produisant une implantation d'ions

Abrégé

An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+ Or As4+, or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

Classes IPC  ?

• C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD]

Produits et services

research and development of semiconductor equipment