Provided are light detecting devices including pixel arrays having main pixels and sub-pixels. More than half of the main pixels may have clear filters, yellow color filters, or no color filters. The sub-pixels may have color filters of different colors, such as red, blue, and green color filters. Some of the main pixels may have red color filters. A processor may be used to generate image data based on signals from the main pixels and sub-pixels. Interpolation may be used to calculate intermediate main pixel signals for positions between the main pixels and intermediate sub-pixel signals for positions between the sub-pixels. The light detecting devices may be included in automotive camera systems and included in vehicles. A vehicle control system may control a vehicle based on image data generated using the light detecting device.
H04N 25/11 - Agencement de matrices de filtres colorés [CFA]Mosaïques de filtres
B60R 1/20 - Dispositions de visualisation en temps réel pour les conducteurs ou les passagers utilisant des systèmes de capture d'images optiques, p. ex. des caméras ou des systèmes vidéo spécialement adaptés pour être utilisés dans ou sur des véhicules
The present disclosure relates to an imaging element, a manufacturing method, and an electronic device that can further improve reliability. This imaging element includes: a semiconductor substrate on which a photodiode is provided for each pixel; a wiring layer stacked on the semiconductor substrate and having one or more metal wiring layers; and an absorption layer that is provided on the wiring layer so as to shield the metal wiring layer(s) from light and that absorbs laser light. The imaging element is a back-illuminated imaging element, and the absorption layer is disposed closer to the semiconductor substrate side than the first metal wiring layer, from the semiconductor substrate side, provided in the wiring layer. This feature can be applied to, for example, CMOS image sensors.
A light detection device according to an embodiment of the present disclosure is provided with a semiconductor substrate having a first surface and a second surface opposing each other, a photoelectric conversion unit provided on the semiconductor substrate and configured to generate, through photoelectric conversion, a first charge corresponding to a received light amount, a plurality of first transistors provided on the first surface of the semiconductor substrate and constituting a read circuit for reading the first charge, a first separation groove provided on the first surface of the semiconductor substrate for separating a first active region including the photoelectric conversion unit from a second active region in which the plurality of first transistors are formed, and a charge discharge unit provided on the first surface of the semiconductor substrate and connected to the first active region.
An image processing device according to the present disclosure comprises: a data acquisition unit that acquires image data and three-dimensional information associated with a subject; a region division unit that subjects a subject imaging region to region division based on an image feature amount obtained from the image data, and to region division based on height information obtained from the three-dimensional information; a correction region estimation unit that, on the basis of the result of the region division by the region division unit, estimates a region to be corrected in an image expressed by the image data; and a correction unit that, on the basis of the result of the region division based on the image feature amount and the result of the region division based on the height information, performs image correction on at least the region to be corrected in the image expressed by the image data.
Provided is a fluorescence detection device with high light use efficiency. The fluorescence detection device according to the present technology detects fluorescence of the test object, the fluorescence being generated by irradiation with excitation light. The fluorescence detection device includes: a micro-well array layer having, on an upper surface, micro-wells in a two-dimensional array shape capable of accommodating the test object; a first detection mechanism provided, below the micro-well array layer, corresponding to each of the micro-wells; and a solid-state imaging element provided, below the first detection mechanism, corresponding to each of the first detection mechanisms, in which the first detection mechanism includes a first microlens group having positive power.
Provided is a light detecting device that can reduce difficulty in arrangement of transfer gates and charge retaining sections caused by reduction in pixel size. Specifically, the light detecting device includes a semiconductor substrate, a trench section that partitions the semiconductor substrate into multiple element regions, a photoelectric converting section that is formed in each element region and generates and stores charge according to a light reception amount, a charge retaining section that is formed in each element region and retains charge generated in the photoelectric converting section, and a transfer transistor that transfers, to the charge retaining section, charge stored in the photoelectric converting section. In addition, the charge retaining section is formed to reach a predetermined depth in the element region from a first surface of the element region that is a surface opposite to a light incidence surface of the element region. Further, the transfer transistor has a gate electrode that continuously covers at least a part of the first surface of the element region excluding a first region that is on the first surface and is a region where the charge retaining section is formed, and at least a part of a second surface that is a surface of the element region on a side of the trench section.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
7.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Provided are a semiconductor device and a method for manufacturing the semiconductor device that suppress variations in the film thickness of side walls of TSVs and improve the coverage of an opening in a high-aspect structure. A semiconductor device includes a through-electrode having a resin ISO structure using a ring TSV, the through-electrode including: a blind hole formed by excavating a semiconductor substrate to a metal pad laminated on an insulating layer; a photosensitive insulating film covering an upper surface of the semiconductor substrate and an inner peripheral surface of the blind hole; and a conductive metal covering the insulating film, wherein the ring TSV is formed such that an opening diameter of an upper stage is slightly different from an inner diameter of a lower stage.
The present disclosure relates to a method and apparatus for waking up an electronic device, a sensor, a device, and a medium. In the method, when an electronic device is in a sleep state, image data is captured by means of a sensor, and the electronic device is awakened on the basis of a wake-up signal outputted by the sensor on the basis of the captured image data. On the basis of the above-described solution, by using the sensor to capture and process image data to automatically wake up the electronic device, the convenience and intelligence of device wake-up can be improved, and the overall power consumption of the device can be reduced.
[Problem] To provide assistance to a user in a situation where visual recognition of an object is difficult. [Solution] This information processing system comprises a processing circuit that performs: processing for detecting an object on the basis of sensing data obtained by sensing the surroundings using a sensor unit provided in a device worn by a user; processing for generating auditory information on the basis of information on the detected object; and processing for performing control so as to notify the user of the generated auditory information through auditory stimulation.
The present invention is a display device capable of calculating an orientation with high accuracy even when there are a plurality of causes of errors. The display device comprises: a display unit that displays image data on the basis of an imaging result obtained by an imaging unit; and a display control unit that controls the display unit. The display control unit includes: an estimation unit (27) that estimates the orientation or an orientation change amount of the imaging unit on the basis of information from a detection unit that detects the orientation or an orientation change of the imaging unit; and an identification unit (37) that identifies the cause of an error occurring in the orientation or orientation change amount estimated by the estimation unit, on the basis of the difference between the orientation or orientation change amount of the imaging unit, which are detected on the basis of the imaging result obtained by the imaging unit, and the orientation or orientation change amount estimated by the estimation unit.
G09G 5/00 - Dispositions ou circuits de commande de l'affichage communs à l'affichage utilisant des tubes à rayons cathodiques et à l'affichage utilisant d'autres moyens de visualisation
G09G 5/37 - Détails concernant le traitement de dessins graphiques
H04N 23/60 - Commande des caméras ou des modules de caméras
H04N 23/63 - Commande des caméras ou des modules de caméras en utilisant des viseurs électroniques
11.
SEMICONDUCTOR DEVICE, ELECTRIC CIRCUIT, AND ELECTRONIC APPARATUS
A semiconductor device according to one embodiment of the present disclosure is provided with a substrate, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer are both provided on a first surface side of the substrate. The second semiconductor layer is provided in a position further away from the first surface than the first semiconductor layer, contains 30% or more of Al, and comprises a band gap larger than the band gap of the first semiconductor layer. No spiral growth is present on the surface of the second semiconductor layer facing the first surface. Alternatively, a spiral growth with a spiral growth step interval of 0.1 μm or more is present on the surface of the second semiconductor layer, or a spiral growth with a spiral growth step density of 12 [μm/μm2] is present on the surface of the second semiconductor layer.
H10D 30/47 - Transistors FET ayant des canaux à gaz de porteurs de charge de dimension nulle [0D], à une dimension [1D] ou à deux dimensions [2D] ayant des canaux à gaz de porteurs de charge à deux dimensions, p. ex. transistors FET à nanoruban ou transistors à haute mobilité électronique [HEMT]
A semiconductor device includes: a first semiconductor element including a pixel region in which a plurality of pixels is arranged on one surface; a second semiconductor element packaged in a region different from the pixel region on the one surface, and including a first circuit that is electrically coupled to the pixel; and a third semiconductor element packaged on the second semiconductor element on a side opposite to the first semiconductor element, and including a second circuit that is electrically coupled to the pixel.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
13.
PHOTODETECTOR, ELECTRONIC APPARATUS, AND OPTICAL ELEMENT
There is provided a photodetector. The photodetector includes a light guide including a plurality of structures each having a size equal to or less than a wavelength of incident light, a first material, a second material, wherein a combination of the first material and the second material is provided above and/or between the plurality of structures and wherein the first material and the second material each has a refractive index different from a refractive index of the plurality of structures and a photoelectric converter that photoelectrically converts light incident via the light guide.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
G02B 1/118 - Revêtements antiréfléchissants ayant des structures de surface de longueur d’onde sous-optique conçues pour améliorer la transmission, p. ex. structures du type œil de mite
An amplifier circuit, a comparator, and a solid-state imaging device capable of suppressing RTS noise are provided.
An amplifier circuit, a comparator, and a solid-state imaging device capable of suppressing RTS noise are provided.
An amplifier circuit in the present disclosure includes an active load and a plurality of input transistors electrically connected to the active load, in which gates of the plurality of input transistors are electrically connected to each other, and the plurality of input transistors includes two or more input transistors connected in series with each other.
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
H04N 25/778 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des amplificateurs partagés entre une pluralité de pixels, c.-à-d. qu'au moins une partie de l'amplificateur doit se trouver sur la matrice de capteurs elle-même
H04N 25/79 - Agencements de circuits répartis entre des substrats, des puces ou des cartes de circuits différents ou multiples, p. ex. des capteurs d'images empilés
15.
DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRONIC APPARATUS USING DISPLAY DEVICE
Display devices that curb light leakage between adjacent pixels are disclosed. In one example, a display device comprises an anode electrode, a cathode electrode, an organic layer between the anode electrode and the cathode electrode, a first insulating layer covering at least a portion of a side surface of the anode electrode and at least a portion of a top surface of the anode electrode, and a cavity between the anode electrode and another anode electrode adjacent to the anode electrode. A first distance between an uppermost point and a lowermost point of a first side surface of the first insulating layer facing the cavity is shorter than a second distance between an uppermost point and a lowermost point of the cavity in a cross-sectional view.
An image processing apparatus according to the present technology includes: a distortion addition processing unit that inputs object unit images that are images for a plurality of objects constituting one frame image, and performs addition processing of rolling shutter distortion for each of the object unit images on the basis of information on a rolling shutter time difference; and a composite image generation unit that generates a composite image obtained by combining the object unit images subjected to the addition processing by the distortion addition processing unit into one frame image.
H04N 23/68 - Commande des caméras ou des modules de caméras pour une prise de vue stable de la scène, p. ex. en compensant les vibrations du boîtier de l'appareil photo
G06T 5/50 - Amélioration ou restauration d'image utilisant plusieurs images, p. ex. moyenne ou soustraction
G06V 10/60 - Extraction de caractéristiques d’images ou de vidéos relative aux propriétés luminescentes, p. ex. utilisant un modèle de réflectance ou d’éclairage
A display device includes: a voltage generation circuit; and a plurality of pixels each emitting light with luminance corresponding to a gradation voltage obtained from a generated voltage of the voltage generation circuit, in which the generated voltage includes: a ramp voltage; and a non-ramp voltage including a voltage outside a voltage range of the ramp voltage, and the non-ramp voltage includes a voltage corresponding to a gradation voltage that minimizes luminance of the pixels.
G09G 3/3266 - Détails des circuits de commande pour les électrodes de balayage
G09G 3/3258 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander la tension aux bornes de l'élément électroluminescent
18.
LIGHT DETECTION ELEMENT, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF LIGHT DETECTION ELEMENT
Light detection elements with improved detection sensitivity are disclosed. In one example, a light detection element includes a light reception section that generates a charge according to an amount of received light; a voltage conversion section that acquires the charge via an input node, converts the charge into a voltage signal, and outputs the voltage signal from an output node; a signal amplification section that amplifies the voltage signal; and a comparison section that compares the amplified voltage signal with a predetermined voltage. The voltage conversion section includes an amplification circuit connected between the input node and the output node; and a feedback circuit connected between the input node and the output node, and a gate insulating film of at least one transistor included in the feedback circuit is thicker than gate insulating films of transistors included in the signal amplification section and the comparison section.
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H04N 25/707 - Pixels pour la détection d’événements
H04N 25/778 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des amplificateurs partagés entre une pluralité de pixels, c.-à-d. qu'au moins une partie de l'amplificateur doit se trouver sur la matrice de capteurs elle-même
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
The present disclosure relates to a light detection device and an electronic apparatus that make it possible to improve autofocus performance. Provided is a light detection device comprising a pixel array unit in which a plurality of pixels, including a pixel in which a plurality of photoelectric conversion units are formed with respect to one microlens, are arranged in a two-dimensional array. In the pixel, the plurality of photoelectric conversion units are isolated in a first direction and/or a second direction different from the first direction in plan view. The isolation performance in the first direction is lower than the isolation performance in the second direction. The present disclosure is applicable to, for example, a solid-state imaging device such as a CMOS image sensor.
According to the present invention, power consumption in an image sensor provided with a column amplifier for each column is reduced. A first amplifier transistor outputs, from the drain thereof, a first output voltage corresponding to the voltage of a vertical signal line connected to the source. A first gain adjustment capacitor is inserted between the gate and drain of the first amplifier transistor. A second gain adjustment capacitor is inserted between the gate of the first amplifier transistor and a ground potential. A first current source is connected to the drain of the first amplifier transistor. A second amplifier transistor has the same gate-source voltage as the first amplifier transistor, and outputs, from the drain thereof, a second output voltage corresponding to the first output voltage input to the gate. A second current source is connected to the source of the second amplifier transistor.
An optical element according to an embodiment of the present disclosure comprises: a medium; and a columnar structure which is embedded in the medium, and in which a first structure having a refractive index higher than the refractive index of the medium and a second structure having a refractive index lower than the refractive index of the medium are layered in the optical axis direction of incident light.
H10F 30/22 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes
[Problem] To prevent light reflected by a light-emitting unit from returning to a light source and affecting the laser oscillation frequency of the light source. [Solution] This light-receiving device comprises: a measurement optical system that generates measurement light having a frequency that shifts at least discretely to two or more levels; and a light processing unit that causes prescribed oscillation light and return light of the measurement light from an object being measured to interfere with each other. The measurement optical system has a light-emitting unit that transmits the measurement light. The measurement optical system is also capable of transmitting the measurement light through laser resonance caused by at least inner-surface reflection of the light-emitting unit.
G01S 17/32 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées
G01C 3/06 - Utilisation de moyens électriques pour obtenir une indication finale
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
The present disclosure relates to a light detection device that makes it possible to improve sensitivity. Provided is a light detection device comprising a semiconductor substrate provided with a plurality of pixels including a photoelectric conversion unit having a first region for generating a charge corresponding to the amount of received incident light and a second region different from the first region. The first region is composed of a first material, and the second region is composed of a second material different from the first material. A waveguide composed of a material having a lower refractive index than the second material formed on the light incident side of the first region is formed on the inner side in relation to a pixel separation unit that separates the pixel from another pixel. The present disclosure is applicable to, for example, a solid-state imaging device such as a CMOS image sensor.
A data processing device according to the present disclosure includes: a register including, as address regions, a setting region that stores setting information transmitted from a host, a security data region that stores security data for the setting information, and a communication information region that stores communication information with the host; and a communication unit that performs register communication between the host and the register.
G06F 21/71 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
An information processing device according to the present disclosure includes a control unit. The control unit controls operation of at least one of a plurality of light sources or an imaging unit, the light sources emitting light into a car cabin, each of the light sources being included in a module, the imaging unit capturing an image of at least a part of a region to which the light is applied to acquire imaging information. The control unit, when a temperature of the module exceeds a first threshold, controls operation of at least one of the plurality of light sources or the imaging unit to restrict a function of the module.
H04N 23/52 - Éléments optimisant le fonctionnement du capteur d'images, p. ex. pour la protection contre les interférences électromagnétiques [EMI] ou la commande de la température par des éléments de transfert de chaleur ou de refroidissement
B60R 1/29 - Dispositions de visualisation en temps réel pour les conducteurs ou les passagers utilisant des systèmes de capture d'images optiques, p. ex. des caméras ou des systèmes vidéo spécialement adaptés pour être utilisés dans ou sur des véhicules pour visualiser une zone à l’intérieur du véhicule, p. ex. pour visualiser les passagers ou le chargement
F21V 29/00 - Protection des dispositifs d'éclairage contre les détériorations thermiquesDispositions de refroidissement ou de chauffage spécialement adaptées aux dispositifs ou systèmes d'éclairage
H04N 23/11 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande pour générer des signaux d'image à partir de différentes longueurs d'onde pour générer des signaux d'image à partir de longueurs d'onde de lumière visible et infrarouge
H04N 23/65 - Commande du fonctionnement de la caméra en fonction de l'alimentation électrique
26.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
Information processing with estimation of a distance value with high accuracy is disclosed. In one example, an information processing device includes a cost volume generation unit that generates a cost volume indicating a probability distribution of a distance to an object appearing in each pixel of a captured image on the basis of distance measurement data acquired by a ToF sensor. The technology can be applied to, for example, an information processing system that performs upsampling of a distance value acquired by a ToF sensor.
G06T 7/521 - Récupération de la profondeur ou de la forme à partir de la télémétrie laser, p. ex. par interférométrieRécupération de la profondeur ou de la forme à partir de la projection de lumière structurée
G01S 7/4865 - Mesure du temps de retard, p. ex. mesure du temps de vol ou de l'heure d'arrivée ou détermination de la position exacte d'un pic
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p. ex. caméras à temps de vol ou lidar flash
Provided is a current mirror circuit capable of adjusting the noise characteristic of the entire circuit while adjusting output impedance. The current mirror circuit includes a signal line that is connected to a plurality of circuits, a first current source, a first transistor, a second current source, a second transistor, and an adjustment mechanism. The first transistor is gate-connected to the signal line. The first current source is connected to a drain of the first transistor. The second transistor is gate-connected to the first current source and includes a source connected to the signal line. The second current source is connected to the signal line. The adjustment mechanism adjusts output impedance applied to the signal line.
Sensing systems, methods and devices are disclosed. In one example, a sensing system comprises a first imaging sensor including an array of light receiving elements and a first light emitter including an array of light emitting elements. Control circuitry is configured to control the first imaging sensor and the first light emitter such that an imaging range of a subset of the array of light receiving elements overlaps with an irradiation range of a subset of the array of light emitting elements.
The present invention provides a surface emitting laser that makes it possible to obtain gain necessary for oscillation regardless of resonator length and that makes it possible to control a transverse mode. A surface emitting laser according to the present technology comprises a first reflective structure, a second reflective structure, and an intermediate structure which is sandwiched between the first reflective structure and the second reflective structure and which includes an active layer, wherein the first reflective structure has at least one convex surface that protrudes toward the opposite side from the second reflective structure side and that has a reflectance distribution and/or reflection direction distribution in the in-plane direction.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
A photodetector according to an embodiment of the present disclosure comprises: an optical layer having a first region and a second region, each of which is provided with a structure; a first pixel having a first photoelectric conversion element and a first lens provided between the first region and the first photoelectric conversion element; and a second pixel having a second photoelectric conversion element and a second lens provided between the second region and the second photoelectric conversion element. The shape of the first lens is different from the shape of the second lens.
[Problem] To maintain luminance uniformity. [Solution] This display device comprises a pixel array, a first scanning circuit, and a second scanning circuit. In the pixel array, pixels are arranged in an array along a first direction and a second direction. The first scanning circuit selects one or more lines along the first direction, performs control for bringing the pixels belonging to the line into a state where a luminance signal can be written, and performs control for causing the pixels to emit light at a light emission timing after the luminance signal is written. The second scanning circuit outputs the luminance signal to the pixels brought into a writable state. At a timing at which the luminance signal can be written, the first scanning circuit performs control for bringing the pixels belonging to one or more lines that are not controlled to emit light at the light emission timing into a state where the luminance signal can be written, and the second scanning circuit outputs the luminance signal to the pixels in a writable state.
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
32.
SIGNAL PROCESSING DEVICE, SIGNAL PROCESSING METHOD, AND RECORDING MEDIUM
This signal processing device comprises: a RAW image simulation unit that performs, as processes on a captured image captured by a camera of a first model, an imaging characteristic imparting process for imparting imaging characteristics which would result from a camera of a second model different from the first model, and an inverse signal process which is the inversion of a camera signal process performed by the camera of the first model or the inversion of a camera signal process performed by the camera of the second model, thereby simulating a RAW image which would result from image quality in cases in which imaging is performed by the camera of the second model; and a signal processing simulation unit that implements, on the RAW image, a camera signal process which would be performed on the RAW image by the camera of the second model.
An electronic device comprising circuitry configured to enhance digital images and video frames, wherein the circuitry is configured to acquire raw image data and to perform real-time image enhancement tasks, and wherein the device is designed to operate entirely offline using AI-based imaging sensors, AI chips, or co-processors.
The present disclosure relates to a control device, a control method, and a display device that make it possible to suppress color breakup associated with active driving of a light-emitting diode (LED). The emission of light from a plurality of light-emitting diodes (LEDs) including a first LED and a second LED is controlled on the basis of control data indicating lighting times for a plurality of wavelength bands including a first wavelength band and a second wavelength band. In a first period, the first LED corresponding to the first wavelength band having the longest lighting time is continuously lit on the basis of the lighting time for the first wavelength band, and the second LED corresponding to the second wavelength band is intermittently lit on the basis of the lighting time for the first wavelength band and the lighting time for the second wavelength band. The technology of the present disclosure can be applied to an active-driven LED display device.
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
The present technology relates to a photodetection device and an electronic apparatus capable of improving reliability of a light condensing design. A photodetection device according to one aspect of the present technology includes: a semiconductor substrate including a photoelectric conversion unit; a spacer layer that is provided on the semiconductor substrate; a meta-surface layer that is provided on the spacer layer; and a sidewall protective film that is provided at least on a sidewall of the spacer layer. The present technology can be applied to an image sensor including a meta-surface layer.
A light receiving element capable of reducing at least either power consumption or a dead time while reducing an input voltage to a readout circuit is proposed. There is provided a light receiving element including a photon response multiplication part that includes a charge multiplication region capable of multiplying a charge generated in response to incidence of a photon, a first resistor part that is connected at one end to one end of the photon response multiplication part and has a resistance value larger than a resistance value of the photon response multiplication part, a second resistor part that is connected at one end to the other end of the first resistor part, and a readout unit that is connected to the other end of the first resistor part and reads an output from the photon response multiplication part via the first resistor part.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
37.
IMAGE SENSOR, DATA PROCESSING DEVICE, AND IMAGE SENSOR SYSTEM
The present disclosure relates to an image sensor, a data processing device, and an image sensor system capable of further improving versatility. The image sensor includes: a luminance detecting unit that detects luminance of light received by a photodiode and outputs a luminance signal representing a luminance value of the luminance; and an event detecting unit that acquires a difference between the luminance value represented by the luminance signal and a predetermined reference value and, in a case in which the difference exceeds an event detection threshold of a positive side or an event detection threshold of a negative side, detects an occurrence of the event and outputs the event data representing details of the event; an additional information generating unit that generates pixel information added to data of each pixel as additional information that is additionally disposed in event data on the basis of the event data; and a data transmitting unit that transmits pixel information in a frame structure in which the pixel information is embedded in the event data. The present technology, for example, can be applied to an event based vision sensor (EVS).
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H04N 23/745 - Détection de la fréquence de scintillement ou suppression du scintillement, le scintillement étant causé par l'éclairage, p. ex. par l'éclairage d'un tube fluorescent ou d'une LED pulsée
38.
INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD
The present invention relates to an information processing device and an information processing method that make it possible to transmit an image in a more suitable manner. This information processing device comprises a band control unit that controls a transmission band used for transmission of an image captured by an image sensor that captures an image in frame units. The band control unit controls a transmission band used for transmission of an image of a band control target frame, which is a frame for which the transmission band is to be controlled. The transmission band is controlled on the basis of information on the image of the frame preceding the band control target frame. The present invention can be applied to, for example, an electronic apparatus equipped with an image sensor.
H04N 19/115 - Sélection de la taille du code pour une unité de codage avant le codage
H04N 19/14 - Complexité de l’unité de codage, p. ex. activité ou estimation de présence de contours
H04N 19/172 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage adaptatif caractérisés par l’unité de codage, c.-à-d. la partie structurelle ou sémantique du signal vidéo étant l’objet ou le sujet du codage adaptatif l’unité étant une zone de l'image, p. ex. un objet la zone étant une image, une trame ou un champ
H04N 23/60 - Commande des caméras ou des modules de caméras
H04N 25/75 - Circuits pour fournir, modifier ou traiter des signaux d'image provenant de la matrice de pixels
Provided is a display apparatus that can suppress both leakage of a drive current between adjacent light-emitting elements and leakage of a drive current between an anode and a cathode. The display apparatus comprises: an organic substance-containing layer that is connected between adjacent light-emitting elements and includes an organic light-emitting layer; a plurality of first electrodes that are provided for each of the light-emitting elements on one surface side of the organic substance-containing layer; a second electrode that is provided on the other surface side of the organic substance-containing layer; an insulating layer that is provided between adjacent light-emitting elements, covers the peripheral edge portion of each of the first electrodes, and includes a silicon compound; and a low dielectric constant member that is provided between the peripheral edge portion of each of the first electrodes and the insulating layer and has a dielectric constant that is lower than the dielectric constant of the insulating layer.
H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
The present technology relates to an information processing system, an information processing method, and a program that make it possible to generate image data close to image data actually obtained using a camera. The information processing system comprises: a first image generation unit that generates, from first image data obtained by a first camera, second image data in which the influence of characteristics of the first camera has been reduced; and a second image generation unit that generates third image data in which the influence of characteristics of a second camera has been added to the second image data. The present technology can be applied to, for example, a system that generates learning data for machine learning.
[Problem] To suppress crosstalk between pixels. [Solution] A solid-state imaging device according to the present invention comprises pixels. The pixels have a photoelectric conversion layer and a first diffusion region. The photoelectric conversion layer receives incident light and converts the received light into carriers based on the intensity of the light. The first diffusion region acquires the carriers produced from the light at the photoelectric conversion layer. The pixels also have second diffusion regions that acquire the carriers produced at the photoelectric conversion layer. The second diffusion regions are next to adjacent pixels at positions that are closer to the first diffusion region of the relevant pixel than the first diffusion regions of the adjacent pixels. The first diffusion region is formed deeper into the photoelectric conversion layer than the second diffusion regions.
There is provided a photodetector. The photodetector according to an embodiment of the present disclosure includes a first substrate, a second substrate, and an optical circuit. The first substrate includes a photoelectric conversion element that photoelectrically converts light. The second substrate includes at least a portion of a processing circuit configured to execute signal processing of a first signal generated on a basis of electric charge converted by the photoelectric conversion element. The second substrate is stacked on the first substrate. The optical circuit is configured to output a first optical signal based on the first signal.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
G02B 6/00 - Guides de lumièreDétails de structure de dispositions comprenant des guides de lumière et d'autres éléments optiques, p. ex. des moyens de couplage
G02B 6/42 - Couplage de guides de lumière avec des éléments opto-électroniques
A system for predicting subsurface light scattering of a real object for relighting of a translucent object in a virtual environment, wherein the system includes: a light pattern projector configured to sequentially project each of multiple different fringe light patterns on the real object; a camera configured to capture an image of the real object for each of the multiple different projected fringe light patterns when the respective fringe light pattern is projected on the real object to obtain phase shift profilometry images; and an image processing device including circuitry configured to: input the phase shift profilometry images into a machine learning algorithm, wherein the machine learning algorithm is configured to predict subsurface light scattering from a plurality of image sections of the phase shift profilometry images, wherein the output of the machine learning algorithm corresponds to a predicted light dot response of a part of the real object that is imaged in the respective image section.
[Problem] To perform distance measurement processing with low power consumption while enabling miniaturization and cost reduction.
[Problem] To perform distance measurement processing with low power consumption while enabling miniaturization and cost reduction.
[Solution] A distance-measuring device measures a distance to an object based on a reflected light signal received by a light-receiving portion, the reflected light signal being generated when a light pulse signal emitted from a light-emitting portion is reflected by the object. The distance-measuring device includes a first substrate formed of a Group-IV material on which the light-receiving portion and the light-emitting portion are integrally arranged; and a second substrate which is laminated on the first substrate and on which a readout circuit for reading out a light-reception signal received by the light-receiving portion is arranged.
To reduce detection of a noise event and to quickly and accurately detect an event. A photodetection element includes: a first pixel region including a plurality of first pixels each performing detection of an event based on an amount of change of an amount of incident light; and a second pixel region disposed in the vicinity of the first pixel region and including a second pixel that performs detection of the event around a first pixel in which the event is detected among the plurality of first pixels.
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
To downsize an imaging device that performs rotation correction. A camera module includes a lens group, a translation actuator, a rotary actuator, and a mounting substrate. In the camera module, the translation actuator translates the lens group. The rotary actuator rotates the lens group. A rigid-flexible substrate is partially deformed following rotation of the lens group. Furthermore, the translation actuator is provided on one of both surfaces of the mounting substrate, and the rigid-flexible substrate is provided on the other of the both surfaces of the mounting substrate.
A photodetector includes: a photoelectric conversion section; and an optical layer provided to cover the photoelectric conversion section, in which the optical layer includes: a plurality of pillars arranged side by side in a plane direction of a layer to guide at least light to be detected among incident light to the photoelectric conversion section; and a reflection suppressing film provided on at least one of an upper surface and a lower surface of the pillar, and the reflection suppressing film has a non-flat portion including at least one of a recess and a protrusion.
Provided is a display device comprising a plurality of light-emitting elements that are arranged in a matrix on a substrate and that radiate light having mutually different wavelengths. Each of the light-emitting elements has: a laminated structure comprising a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, and a protective film provided on the upper electrode; and a side wall film that covers the side surface of the laminated structure. In at least two light-emitting elements among the plurality of light-emitting elements, the film thickness of the light-emitting layer increases as the wavelength of light radiated from the light-emitting layer increases, the film thickness of the side wall film decreases as the wavelength of the light increases, and the height of the upper surface of the laminated structure with respect to the upper surface of the substrate increases as the wavelength of the light increases.
H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H10K 50/824 - Cathodes combinées avec des électrodes auxiliaires
H10K 50/852 - Dispositifs pour extraire la lumière des dispositifs comprenant une structure de cavité résonante, p. ex. une paire de réflecteurs de Bragg
H10K 59/35 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des sous-pixels rouge-vert-bleu [RVB]
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
H10K 59/121 - Affichages à OLED à matrice active [AMOLED] caractérisés par la géométrie ou la disposition des éléments de pixel
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
49.
IMAGING DEVICE, IMAGE PROCESSING DEVICE, AND IMAGING METHOD
An imaging device according to the present invention includes a gradation pixel unit and an EVS pixel unit. The gradation pixel unit acquires a partial captured image selectively including central vision. The EVS pixel unit acquires event data indicating movements in peripheral vision.
The present invention prevents defects caused by cracks in a Wafer Level Chip Scale Package (WLCSP). This semiconductor package comprises a semiconductor substrate, an insulating film and back surface wiring, a guard ring, and a protective film. In this semiconductor package, the insulating film and the back surface wiring are formed in a wiring region on the back surface of the semiconductor substrate. Further, in the semiconductor package, the guard ring is formed around the back surface wiring. Moreover, in the semiconductor package, the protective film covers the guard ring, the insulating film, and the back surface wiring.
[PROBLEM] To provide a light detection device with which it is possible to reduce the thickness of said device even if a bonding pad is provided on the light receiving surface side of a semiconductor layer. [SOLUTION] A light detection device according to an embodiment of the present invention comprises: a semiconductor layer including a first surface serving as a light receiving surface and a second surface located opposite the first surface; a light receiving unit disposed on the first surface side of the semiconductor layer and including a plurality of photoelectric conversion units that photoelectrically convert incident light; a first wiring layer disposed on the first surface side; a second wiring layer disposed on the second surface side; a through electrode that penetrates the semiconductor layer and that electrically connects the first wiring layer and the second wiring layer; a pad at least a section of which is embedded in the semiconductor layer on the first surface side and which is electrically connected to the first wiring layer, the second wiring layer, and the through electrode; and a first insulating film which is disposed on the first surface side and which causes a section of a surface of the pad to be exposed.
[Problem] To provide a photodetection element capable of reliably detecting an event and appropriately resetting a threshold. [Solution] This photodetection element comprises: a plurality of pixels each including a light receiving unit that photoelectrically converts incident light and generates an electric signal, and a detection circuit that compares a first signal corresponding to the electric signal with a threshold voltage and outputs an event signal, the plurality of pixels being two-dimensionally arranged in a first direction and a second direction; a first decoder that outputs, to a pixel unit, a first selection signal for selecting a row composed of the plurality of pixels arranged in the first direction; and a second decoder that outputs, to the pixel unit, a second selection signal for selecting a column composed of the plurality of pixels arranged in the second direction. The detection circuits that have output the event signals are reset according to the outputting of the event signals, and the detection circuits of the plurality of pixels are periodically reset, and, in a periodic reset operation, at least one of the first and second decoders randomly selects a row or a column by the first or second selection signal.
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H04N 25/707 - Pixels pour la détection d’événements
53.
LIGHT RECEIVING DEVICE AND LIGHT RECEIVING CIRCUIT
[Problem] To make it possible to suppress an increase in the time interval of a pulse signal capable of passing through a wire. [Solution] This light receiving device comprises: a photoelectric conversion unit that outputs a detection signal in response to detection of photons; a signal output unit that alternately outputs a first signal at a first level and a second signal at a second level different from the first level in response to the detection signal; and a time difference output unit that outputs a digital signal on the basis of a time difference between a first input time point of the first signal inputted via a wire, a second input time point of the second signal, and a predetermined time point.
G01S 7/4861 - Circuits pour la détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
54.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING PROGRAM
This information processing device comprises: an acquiring unit that acquires event data relating to an event generated by a change in the luminance of reflected light from an object, and angular velocity data relating to the angular velocity of an imaging device; a motion correcting unit that, on the basis of the acquired event data and angular velocity data, subjects the acquired event data to motion correction for correcting an event caused by the motion of a sensor that detected the event data; and a segmentation unit that performs segmentation for classifying the event data for which the motion correction has been performed into event data resulting from stationary objects and event data resulting from moving objects.
H04N 23/68 - Commande des caméras ou des modules de caméras pour une prise de vue stable de la scène, p. ex. en compensant les vibrations du boîtier de l'appareil photo
The present technology relates to a photoelectric conversion element that can suppress moire without reducing area efficiency. This photoelectric conversion element with a plurality of pixels includes a light receiving unit that receives infrared light, and a readout circuit that reads out, as a signal, a charge corresponding to the infrared light. The light receiving unit includes a semiconductor layer that photoelectrically converts incident infrared light, and a diffusion layer that is formed on the readout circuit side of the semiconductor layer and supplies charge obtained by photoelectric conversion to the readout circuit. Furthermore, the pixel has the diffusion layer, and the plurality of pixels include pixels having diffusion layers located at different positions. The present technology can be applied to an infrared sensor.
This imaging device is miniaturized. The imaging device includes an imaging element, a data length change unit, a processing unit, and a restoration unit. The imaging element includes a pixel array unit in which a plurality of pixels are arranged and configured to generate pixel signals corresponding to incident light, converts the generated pixel signals into digital pixel signals, and outputs the digital pixel signals. The data length change unit changes the data length of the outputted pixel signals. The processing unit processes the pixel signals of which the data length has been changed. The restoration unit restores the data length of the processed pixel signals.
H04N 23/741 - Circuits de compensation de la variation de luminosité dans la scène en augmentant la plage dynamique de l'image par rapport à la plage dynamique des capteurs d'image électroniques
H04N 23/12 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande pour générer des signaux d'image à partir de différentes longueurs d'onde avec un seul capteur
Provided is a display device comprising a plurality of light-emitting elements arranged in a matrix on a semiconductor substrate and including a first light-emitting element and a second light-emitting element that emit light of mutually different colors. Each of the light-emitting elements includes a lower electrode that reflects light, a light-emitting layer provided on the lower electrode, and an upper electrode provided on the light-emitting layer. The lower electrode of the first light-emitting element is formed from a first lower electrode layer, and the lower electrode of the second light-emitting element is formed from the first lower electrode layer and a second lower electrode layer laminated on the first lower electrode layer.
H10K 50/852 - Dispositifs pour extraire la lumière des dispositifs comprenant une structure de cavité résonante, p. ex. une paire de réflecteurs de Bragg
H10K 59/121 - Affichages à OLED à matrice active [AMOLED] caractérisés par la géométrie ou la disposition des éléments de pixel
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 77/10 - Substrats, p. ex. substrats flexibles
Provided is a display device comprising a plurality of light-emitting elements (110b, 110g, 110r) that are arranged in a matrix on a substrate and radiate light having mutually different wavelengths, wherein: each of the light-emitting elements has a lower electrode (212), a light-emitting layer (220) provided on the lower electrode, an upper electrode (230) provided on the light-emitting layer, a first protective film (240) provided on the upper electrode, and second protective films (214b, 214g, 214r) surrounding the lower electrode; and the film thicknesses of the second protective films differ from each other for each color of the light radiated by the light-emitting elements.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H10K 59/122 - Structures ou couches définissant le pixel, p. ex. bords
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 59/35 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des sous-pixels rouge-vert-bleu [RVB]
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
H10K 59/95 - Ensembles de plusieurs dispositifs comprenant au moins un élément organique émetteur de lumière dans lesquels tous les éléments émetteurs de lumière sont organiques, p. ex. ensembles d'affichages à OLED
A photodetector includes a first substrate and a second substrate. The first substrate includes a photoelectric converter, an electric charge accumulator, and a first bonding surface. The second substrate includes a semiconductor material including a first semiconductor part and a second semiconductor part, a through via, a second bonding surface, and a first wiring layer. The first wiring layer includes a coupling part. Each of the first semiconductor part and the second semiconductor part includes a semiconductor surface having at least one semiconductor element. The at least one semiconductor element is included in a readout circuit that outputs a first signal based on the electric charge. The second bonding surface is positioned on an opposite side of the semiconductor material to the semiconductor element formation surface and is bonded to the first bonding surface. The first wiring layer is positioned between the semiconductor material and the second bonding surface.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H04N 23/54 - Montage de tubes analyseurs, de capteurs d'images électroniques, de bobines de déviation ou de focalisation
60.
IMAGE SENSOR, IMAGING DEVICE, AND IMAGE SENSOR CONTROL METHOD
The present invention improves the performance of an image sensor in which a column amplifier is disposed. The column amplifier outputs an output signal by executing any one among sample-and-hold of a pixel signal from the pixel, amplification of the pixel signal, attenuation of the pixel signal, or weighted average processing of the pixel signal. An analog-to-digital converter converts the output signal into a digital signal. A determination control circuit controls the column amplifier to execute the sample-and-hold or amplification of the pixel signal when the illuminance is lower than a prescribed value, and controls the column amplifier to execute the attenuation or weighted average processing of the pixel signal when the illuminance is higher than the prescribed value.
The present invention provides technology that achieves more accurate measurement while preventing luminance saturation. The present technology provides a measurement device, etc., comprising a light source capable of switching between pulse operation and CW operation, and a control unit that controls the switching between pulse operation and CW operation, wherein the light source includes a saturable absorber that exhibits a quantum-confined Stark effect (QCSE). The control unit may control a voltage applied to the saturable absorber to switch between pulse operation and CW operation.
The present invention provides, for example, a display device in which the transmission distance of an input signal is shorter in comparison to conventional devices. The display device comprises a light-emitting unit that includes a light-emitting element and a multilayered substrate that includes a multilayered wiring layer, wherein the light-emitting unit and the multilayered wiring layer are joined via a bump.
G09F 9/00 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H01L 21/60 - Fixation des fils de connexion ou d'autres pièces conductrices, devant servir à conduire le courant vers le ou hors du dispositif pendant son fonctionnement
H05B 33/14 - Sources lumineuses avec des éléments radiants ayant essentiellement deux dimensions caractérisées par la composition chimique ou physique ou la disposition du matériau électroluminescent
H10K 50/87 - Dispositions pour le chauffage ou le refroidissement
H10K 50/115 - OLED ou diodes électroluminescentes polymères [PLED] caractérisées par les couches électroluminescentes [EL] comprenant des nanostructures inorganiques actives, p. ex. des points quantiques luminescents
A light detection device according to an embodiment of the present disclosure comprises: a first semiconductor layer having a photoelectric conversion element and a floating diffusion; a second semiconductor layer; a first transistor provided on a first surface side of the second semiconductor layer; a through electrode provided so as to penetrate the second semiconductor layer; and a first insulating film and an insulating region provided around the through electrode. In a direction orthogonal to a stacking direction of the first semiconductor layer and the second semiconductor layer, the thickness of the insulating region provided on a second surface side of the second semiconductor layer is larger than the thickness of the first insulating film provided on the first surface side of the second semiconductor layer.
The present technology relates to an imaging element and an electronic device that make it possible to acquire phase difference information in accordance with a wide range of incidence angles. The present invention includes a pixel array unit in which a plurality of pixels are arranged in a matrix. Each of the pixels includes a photoelectric conversion unit, a first lens that is positioned closer to a light incidence side than the photoelectric conversion unit and refracts light, and a second lens that is positioned closer to the light incidence side than the first lens. The first lens is disposed so as to be offset in a planar direction of the pixel array unit by a first offset amount corresponding to the image height of the pixel array unit. The second lens is disposed so as to be offset in the planar direction of the pixel array unit by a second offset amount larger than the first offset amount. The first lens is provided at a size corresponding to the image height of the pixel array unit. The present technology can be applied to an imaging element that detects a phase difference.
The present disclosure relates to a signal processing device, an imaging element, and an electronic apparatus that enable further characteristic improvement. This signal processing device is provided with a comparator in which a differential pair is configured from a first transistor group in which a first input signal is input to a gate terminal via a first capacitor, and a second transistor group in which a second input signal, the magnitude relationship of which with the first input signal is to be compared, is input to a gate terminal via a second capacitor. The signal processing device is configured such that the number of transistors in which the first input signal is input to the gate terminal, among the first transistor group, can be switched, and the number of transistors in which the second input signal is input to the gate terminal, among the second transistor group, can be switched. The present technology can be applied to, for example, a CMOS image sensor.
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
H03K 5/08 - Mise en forme d'impulsions par limitation, par application d'un seuil, par découpage, c.-à-d. par application combinée d'une limitation et d'un seuil
H03M 1/56 - Comparaison du signal d'entrée avec une rampe linéaire
66.
SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
[Problem] To effectively utilize resources. [Solution] This solid-state imaging device comprises a pixel array, a readout circuit, a counting circuit, a storage circuit, a control circuit, and a histogram processing circuit. In the pixel array, pixels provided with light-receiving elements for detecting the incidence of photons are disposed in an array. The readout circuit reads out detection signals from the pixels at a sampling interval. The counting circuit counts the number of the detection signals, read out from the readout circuit, at each sampling interval in units of macro pixels including the pixels. The storage circuit stores the counted pixel values for each sampling interval in each of the macro pixels in the storage circuit in units of bins having a width defined on the basis of the sampling interval. The control circuit dynamically determines the number of bins allocated to each of the plurality of macro pixels. The histogram processing circuit generates a histogram for each of the macro pixels from values stored in the bins allocated to the macro pixels.
Provided is a light detection device comprising: a photoelectric conversion element that is disposed on a first substrate and that converts light into an electric charge; and a pixel circuit that converts the electric charge into a pixel signal. The pixel circuit: is disposed on a second substrate on which the first substrate is laminated; is electrically connected to the photoelectric conversion element; and is configured to include a transistor having three terminals disposed on a first surface side of the second substrate. A first wiring is disposed on a second surface side of the second substrate facing the first surface, and at least one of the three terminals of the transistor is electrically connected to the first wiring via a first through wiring penetrating at least a part of the second substrate in the thickness direction.
This light-detection element includes: a first semiconductor substrate; a second semiconductor substrate layered above the first semiconductor substrate; a photoelectric conversion unit provided in the first semiconductor substrate; floating diffusion (FD) that is provided in the first semiconductor substrate and that accumulates charges from the photoelectric conversion unit; a transistor that is provided in the second semiconductor substrate and that includes a source-drain (SD) region formed in a semiconductor unit provided above an insulating region; and an N-type impurity region extending from inside the first semiconductor substrate to inside the second semiconductor substrate so as to connect the FD to the SD region of the transistor. The impurity region includes: a first section that, inside the first semiconductor substrate, contacts the FD; and a second section that, inside the second semiconductor substrate, contacts the SD region of the transistor.
A semiconductor device according to an embodiment of the present disclosure comprises: a first substrate including a first semiconductor layer that has a first surface and a second surface facing each other and is provided with a plurality of first functional elements, and a first wiring layer provided on the first surface side and forming a first bonding surface; a second substrate including a second semiconductor layer that has a third surface and a fourth surface facing each other and is provided with a plurality of second functional elements, and a second wiring layer provided on the third surface side and forming a second bonding surface bonded to the first bonding surface; a plurality of bonding electrodes electrically connecting the plurality of first functional elements and the plurality of second functional elements, and provided in a first direction and a second direction orthogonal to the first direction; and one or a plurality of shield electrodes disposed between at least one set of the plurality of bonding electrodes adjacent to each other in a third direction that is an oblique direction to the first direction and the second direction, on at least one of the first bonding surface and the second bonding surface.
Provided is a light detection device comprising: a photoelectric conversion element that is disposed on a first substrate and that converts light into an electric charge; and a pixel circuit that converts the electric charge into a pixel signal. The pixel circuit: is disposed on a second substrate on which the first substrate is laminated; is electrically connected to the photoelectric conversion element; and is configured to include a transistor having three terminals disposed on a first surface side of the second substrate. A first wiring is disposed on a second surface side of the second substrate facing the first surface, and at least one of the three terminals of the transistor is electrically connected to the first wiring via a first through wiring penetrating at least a part of the second substrate in the thickness direction.
[Problem] To provide a light detection device that can suppress a dark current that is generated due to various factors. [Solution] This light detection device comprises: a photoelectric conversion region that stores a charge corresponding to the quantity of incident light; a first transistor that has a first gate controlling whether to transfer the charge; a floating diffusion region that holds the charge which was transferred via the first transistor; a second transistor that is positioned adjacent to the first transistor and has a second gate; a region separation layer that is positioned between the first gate and the second gate and extends in the thickness direction of the photoelectric conversion region; and a first insulation layer that is positioned above the region separation layer and has a first surface facing a second gate-side side surface of the first gate, a second surface facing a first gate-side side surface of the second gate, a third surface in contact with an upper surface of the first gate, and a fourth surface in contact with an upper surface of the second gate.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H04N 25/59 - Commande de la gamme dynamique en commandant la quantité de charge stockable dans le pixel, p. ex. en modifiant le rapport de conversion de charge de la capacité du nœud flottant
H04N 25/63 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit appliqué au courant d'obscurité
H04N 25/70 - Architectures de capteurs SSISCircuits associés à ces dernières
H04N 25/771 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante
72.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
[Problem] To appropriately define an alignment mark. [Solution] This semiconductor device is formed by laminating at least a first substrate and a second substrate. The arrangement of the first substrate and the second substrate in a first direction and a second direction intersecting the first direction is defined by an alignment mark, and the first substrate and the second substrate are laminated in a third direction intersecting the first direction and the second direction. At least the second substrate is formed by laminating a plurality of layers, and the alignment mark is formed by laminating at least two layers among the plurality of layers.
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
[Problem] To make it possible to reduce power consumption without reducing image quality. [Solution] This light detection device comprises: a pixel array unit that has a plurality of arrayed pixels, performs photoelectric conversion for each of the pixels by using supplied power supply voltage, and outputs analog pixel signals; an analog-to-digital converter that performs analog-to-digital conversion on the pixel signals, thereby generating digital pixel signals; a signal processing unit that performs signal processing on the digital pixel signals; a monitoring signal generation unit that generates a monitoring signal for monitoring the internal state of at least one among the pixel array unit, the analog-to-digital converter, and the signal processing unit; and an interface unit that transmits the monitoring signal to a power supply device that controls at least one of the voltage level or the operating frequency of the power supply voltage.
An imaging device comprises a semiconductor substrate a first pixel. The first pixel comprises a first photoelectric conversion region disposed in the semiconductor substrate, a second photoelectric conversion region disposed in the semiconductor substrate adjacent to the first photoelectric conversion region in a plan view, a first floating diffusion region disposed in the semiconductor substrate, a first transistor coupled to the first photoelectric conversion region and the first floating diffusion region, and a second transistor coupled to the second photoelectric conversion region and the first floating diffusion region. In the plan view, the second transistor may be adjacent to the first transistor and have a different size than the first transistor. The imaging device may be included in an electronic apparatus and/or a control vehicle for a system that comprises a signal processing circuit.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
A photodetection device according to one embodiment of the present invention comprises a substrate, an insulating layer which is layered on the substrate, a photoelectric conversion unit which is provided on the substrate and generates electric charges by photoelectric conversion, and a shield wiring which is provided on the insulating layer and extends in the thickness direction of the insulating layer. The shield wiring includes a shield film which extends in the thickness direction.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10D 89/00 - Aspects des dispositifs intégrés non couverts par les groupes
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
H10F 30/20 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors
An imaging system comprising an event-based vision sensor, EVS, configured to obtain event-based data of a dynamic scene, wherein the EVS detects as an event the occurrence of a change in intensities of light; and a processing unit configured to process the event-based data, wherein, depending on the processed event-based data, the imaging system is configured to evaluate how a shadow changes in the dynamic scene to determine whether an object casting the shadow collides with a surface and/or another object in the dynamic scene.
G06T 7/246 - Analyse du mouvement utilisant des procédés basés sur les caractéristiques, p. ex. le suivi des coins ou des segments
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
G06V 10/60 - Extraction de caractéristiques d’images ou de vidéos relative aux propriétés luminescentes, p. ex. utilisant un modèle de réflectance ou d’éclairage
G06V 20/40 - ScènesÉléments spécifiques à la scène dans le contenu vidéo
H04N 13/254 - Générateurs de signaux d’images utilisant des caméras à images stéréoscopiques en combinaison avec des sources de rayonnement électromagnétique pour l’éclairage du sujet
77.
INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD
An information processing apparatus for assisting a user in a circuit design task, wherein the information processing apparatus includes circuitry configured to: receive a task description of the circuit design task and a reward signal generation configuration from the user via a user interface; generate, based on the task description, circuit designs; receive, from each of a plurality of evaluation modules, an evaluation result of a circuit design; generate an overall reward signal, based on the evaluation results and the reward signal generation configuration; and adapt the circuit design based on the overall reward signal.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/367 - Vérification de la conception, p. ex. par simulation, programme de simulation avec emphase de circuit intégré [SPICE], méthodes directes ou de relaxation
A phase modulation apparatus according to an embodiment of the present disclosure includes: a phase modulation unit including a plurality of pixels, the phase modulation unit being configured to modulate a phase of light from a light source; and a generation section configured to generate first data and second data on a basis of a phase pattern, the first data being related to a phase modulation amount for each of the pixels in a first phase modulation range that is within a range of the phase modulation amount, the second data being related to the phase modulation amount for each of the pixels in a second phase modulation range that is within the range of the phase modulation amount. The phase modulation unit is configured to modulate the phase of the light from the light source on a basis of the first data, and modulate the phase of the light from the light source on a basis of the second data.
A semiconductor device includes a plurality of signal lines, a first inspection terminal, a detection circuit, a second inspection terminal, and a protection element. The plurality of signal lines extends in a first direction and arranged in a second direction that intersects the first direction. The first inspection terminal is electrically coupled to one end of the signal lines and supplies an inspection signal to the signal lines. The detection circuit is electrically coupled to another end of the signal lines and detects a defect in the signal lines. The second inspection terminal supplies a control signal that controls a detection operation of the detection circuit. The protection element is electrically coupled to the second inspection terminal and absorbs a surge.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
Communication where a transmission destination apparatus of output data confirms a key switching timing used for security processing on the output data is disclosed. In one example, an information processing apparatus receives a new key transmitted from an apparatus as a transmission destination of output data by using a first communication IF in a case where a key used for security processing on the output data of each frame is updated, and a key ID which is identification information of the new key. The information processing apparatus performs the security processing using the new key, generates frame data in a predetermined format including the output data after the security processing and the key ID of the key used for the security processing, and transmits the frame data to the apparatus by using a second communication IF.
H04L 9/32 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
The present disclosure relates to an imaging device and an electronic apparatus that can improve the influence on sensitivity differences between pixels.
The present disclosure relates to an imaging device and an electronic apparatus that can improve the influence on sensitivity differences between pixels.
An imaging device is provided, including a semiconductor substrate in which a plurality of pixels are formed, each pixel having a photoelectric conversion region, wherein diffusion regions are formed in the semiconductor substrate according to an incident angle at which light is incident on a pixel region in which the pixels are arranged two-dimensionally. The present disclosure can be applied to, for example, a CMOS type of imaging device.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
Light-emitting devices with improved frontal luminance are disclosed. In one example, a light-emitting device includes a plurality of light-emitting elements arranged two-dimensionally, a metamaterial, and an optical control layer provided between the plurality of light-emitting elements and the metamaterial. A ratio (L/D) of a distance L between the light-emitting elements and the metamaterial to a size D of a pixel is greater than or equal to 0.2 and less than or equal to 1.8.
H10K 50/856 - Dispositifs pour extraire la lumière des dispositifs comprenant des moyens réfléchissants
H10K 50/858 - Dispositifs pour extraire la lumière des dispositifs comprenant des moyens de réfraction, p. ex. des lentilles
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
H10K 59/50 - OLED intégrées avec des éléments de modulation de lumière, p. ex. avec des éléments électrochromes, des éléments photochromes ou des éléments à cristaux liquides
A wiring according to the present disclosure includes a plurality of division wirings, each of which allows an alternating current to flow through. The plurality of division wirings is configured such that the number of divisions of wirings is equal to or more than four. When Sp is an interwire space between two adjacent division wirings of the division wirings and Wd is an individual wiring width of each of the plurality of division wirings, Sp/Wd falls in a range of not less than 0.2 and not more than 0.55 in a case where an opposite-phase current is caused to flow through the plurality of division wirings as the alternating current, and Sp/Wd falls in a range of not less than 0.35 and not more than 0.95 in a case where an in-phase current is caused to flow through the plurality of division wirings as the alternating current.
H01B 7/30 - Conducteurs ou câbles isolés caractérisés par la forme avec dispositions pour réduire les pertes dans les conducteurs transmettant du courant alternatif, p. ex. dues à l'effet pelliculaire
A light detecting device includes a first section including a first substrate, and the first substrate includes a compound semiconductor layer configured to convert light into an electrical signal. The light detecting device includes a second section including a second substrate, and a third section including a third substrate. The second substrate includes a first amplifying circuit that amplifies the electrical signal, and the third substrate includes a second amplifying circuit and a selection circuit. The first, second, and third sections are stacked with the second section being between the first section and the third section.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
G01S 7/4913 - Circuits de détection, d'échantillonnage, d'intégration ou de lecture des circuits
G01S 17/34 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
85.
LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND IMAGE DISPLAY APPARATUS
A light-emitting device of an embodiment of the disclosure includes: a drive substrate; a plurality of light-emitting elements each having a first surface and a second surface, the first surface being opposed to the drive substrate, the second surface being on an opposite side to the first surface and being a light outputting surface, the plurality of light-emitting elements being disposed in an array on a side of one surface of the drive substrate and each including a compound semiconductor; and a growth substrate that is in contact with the second surface of each of the plurality of light-emitting elements, and forms an interface free of lattice mismatch with the compound semiconductor that configures each of the light-emitting elements.
A photodetector according to an embodiment of the present disclosure includes a first photoelectric conversion section (12) that photoelectrically converts light, a first light-guiding section (30) including a first structure (31) that has a size equal to or less than a wavelength of incident light and accepting incident light transmitted through the first photoelectric conversion section (12), and a second photoelectric conversion section (22) that photoelectrically converts infrared light incident via the first light-guiding section (30).
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
Provided is a photodetection device capable of suppressing generation of defective pixels. Specifically, the photodetection device includes a semiconductor substrate on which a plurality of photoelectric conversion units is formed; and a plurality of optical filters disposed on a light incident surface side of the semiconductor substrate. Furthermore, each of the optical filters includes a metal structure including a metal material of the same kind. Moreover, the photodetection device includes, between the metal structures, a slit portion spatially sectioning the metal structures.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
An effective channel width is expanded. A semiconductor device includes: a semiconductor layer having an active region demarcated by a separation region; and a field-effect transistor in which a pair of main electrode regions sandwiching a channel region are provided in the active region and a gate electrode is provided on the channel region. The active region has a first portion extending in one direction in plan view and a second portion extending from the first portion in a direction crossing the one direction, and the channel region is provided across the first portion and the second portion. One of the pair of main electrode regions is provided in the first region in contact with the channel region, and the other is provided in the second region in contact with the channel region, the pair of main electrode regions being positioned on mutually opposite sides sandwiching the channel region.
H10D 62/17 - Régions semi-conductrices connectées à des électrodes ne transportant pas de courant à redresser, amplifier ou commuter, p. ex. régions de canal
H10D 30/60 - Transistors à effet de champ à grille isolée [IGFET]
H10D 62/10 - Formes, dimensions relatives ou dispositions des régions des corps semi-conducteursFormes des corps semi-conducteurs
H10D 64/27 - Électrodes ne transportant pas le courant à redresser, à amplifier, à faire osciller ou à commuter, p. ex. grilles
H10D 84/83 - Dispositifs intégrés formés dans ou sur des substrats semi-conducteurs qui comprennent uniquement des couches semi-conductrices, p. ex. sur des plaquettes de Si ou sur des plaquettes de GaAs-sur-Si caractérisés par l'intégration d'au moins un composant couvert par les groupes ou , p. ex. l'intégration de transistors IGFET de composants à effet de champ uniquement de transistors FET à grille isolée [IGFET] uniquement
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
A display device includes: a pixel array including a plurality of pixels; a control unit including a plurality of output terminals that outputs video signals; a plurality of selectors provided between the pixel array and the control unit, each selector electrically connecting or electrically disconnecting a corresponding output terminal of the control unit and a corresponding pixel of the pixel array to or from each other; and a plurality of paths connected to the output terminals corresponding to one ends of the respective paths, in which the plurality of paths includes: a plurality of connection paths connected to the selectors corresponding to another ends of the respective paths; and a dummy path not connected to the selectors corresponding to another ends of the respective path.
G09G 3/00 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
G09G 3/3291 - Détails des circuits de commande pour les électrodes de données dans lequel le circuit de commande de données fournit une tension de données variable pour le réglage du courant à travers les éléments électroluminescents, ou de la tension aux bornes de ces éléments
The present technology relates to a photodetection element and an electronic apparatus that make it possible to suppress variations in response time and improve distance measurement accuracy. The present invention comprises a photodetection element which comprises, in order from the light incident surface side, a first photoelectric conversion unit (122) for performing photoelectric conversion, a multiplication region (128) for multiplying carriers by means of a high electric field region, and a second photoelectric conversion unit (121) for performing photoelectric conversion. The multiplication region (128) has a three-layer structure of P-type-N-type-P-type conductivity types or a three-layer structure of N-type-P-type-N-type conductivity types. Alternatively, the multiplication region (128) has a two-layer structure of P-type-N-type conductivity types. The present technology can be applied to a photodetection element included in a distance measurement device that measures the distance to a prescribed object.
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
H10F 30/20 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors
This imaging device accelerates the settling of the potential of a signal line for reading out a signal from a pixel while suppressing deterioration in image quality. The imaging device comprises: a pixel array part in which pixels are disposed in a matrix in a row direction and a column direction; a vertical signal line which transmits, in the column direction, pixel signals read out from the pixels; a first transistor which can form a source follower with the pixels via the vertical signal line; a drive circuit which drives the first transistor on the basis of the potential of the vertical signal line; a boost capacitor which generates, on the basis of charging via the drive circuit, a boost voltage to be used for driving the first transistor; and a first switch which switches the connection of the output of the drive circuit between columns.
According to the present invention, errors between interleaved AD converters are reduced while eliminating the need to generate an analog input signal using a DA converter. This AD converting device comprises: a plurality of AD converters; a multiphase clock generator that generates multiphase clocks for the plurality of AD converters on the basis of a reference clock; a multiplexer that combines AD conversion values of the plurality of AD converters; a phase interpolator (PI) that adjusts the phase of the reference clock; a delay adjusting circuit that adjusts the delay of the multiphase clock for each AD converter; and a switching unit that switches the inputs of the plurality of AD converters between the reference clock and an analog input signal.
The present invention improves image quality in a semiconductor package provided with a semiconductor chip for imaging. This semiconductor package is provided with a transparent on-chip lens layer and a light-shielding resin layer. In the on-chip lens layer out of the on-chip lens layer and the light-shielding resin layer of the semiconductor package, a predetermined number of slits are formed in a peripheral region around a pixel region. Of the on-chip lens layer and the light-shielding resin layer of the semiconductor package, the light-shielding resin layer covers a peripheral region of the on-chip lens layer.
The main purpose of the present technology is to provide a technique with which it is possible to reduce the incidence of electrical connection failure between an electronic device within an electronic module and an external power supply electrode, which could occur due to a temperature change (TC cycle) occurring during manufacturing of the electronic module. As a result of intensive studies, the present inventors have found that, by installing a wire for electrically connecting an electronic device attached to a substrate and an external power supply electrode such that the wire penetrates a rib for supporting a lid body provided so as to face the electronic device, it is possible to reduce the stress applied to a wire neck, which is a connection portion where the wire connects to the electronic device, in the course of a temperature change occurring during manufacturing of an electronic module.
An on-vehicle imaging device according to an embodiment comprises: a housing composed of a first member and a second member; an imaging element provided inside the housing; a first welding member fixed to the first member; and a second welding member fixed to the second member. The first welding member and the second welding member are welded.
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
H10K 59/121 - Affichages à OLED à matrice active [AMOLED] caractérisés par la géométrie ou la disposition des éléments de pixel
H10K 59/131 - Interconnexions, p. ex. lignes de câblage ou bornes
H10K 59/35 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des sous-pixels rouge-vert-bleu [RVB]
H10K 59/38 - Dispositifs spécialement adaptés à l'émission de lumière multicolore comprenant des filtres de couleur ou des supports changeant de couleur [CCM]
H10K 59/90 - Ensembles de plusieurs dispositifs comprenant au moins un élément organique émetteur de lumière
An imaging device of an embodiment of the present disclosure includes a light separator, a first pixel, a second pixel, and a light shielding unit. The light separator separates first wavelength light included in a first wavelength region and second wavelength light included in a second wavelength region from incident light, and includes a structure whose size is equal to or less than a wavelength of incident light. The first pixel includes a first photoelectric converter that selectively receives the first wavelength light and performs photoelectric conversion on the first wavelength light. The second pixel is adjacent to the first pixel and includes a second photoelectric converter that selectively receives the second wavelength light and performs photoelectric conversion on the second wavelength light. The light shielding unit is provided at a boundary between the first pixel and the second pixel and blocks incident light.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
The present invention enables an amount of charge accumulated in a photoelectric conversion unit to be detected without performing destructive readout. This imaging device comprises: a photoelectric conversion unit that is provided in a pixel; a transfer transistor that transfers charges accumulated in the photoelectric conversion unit to a floating diffusion; an amplification transistor that outputs a pixel signal corresponding to the charges accumulated in the floating diffusion; a first selection transistor that selects the output from the amplification transistor; a threshold modulation transistor having a threshold that is modulated on the basis of the charges accumulated in the photoelectric conversion unit; and a second selection transistor that selects the output from the threshold modulation transistor.
A simulation data generation device comprising processing circuitry configured to input a first prompt to a large-scale language model, wherein the first prompt includes instructions for generation of time-series simulation data simulating metadata of a captured image output from an imaging device, wherein the time-series data enables confirmation of motion of a subject in the captured image through visualization, obtain the time-series simulation data as answer information from the large-scale language model, input a second prompt to the large-scale language model instructing modification of the answer information, obtain modified time-series simulation data as answer information from the large-scale language model, and output the modified time-series simulation data, the output being a visualized presentation to a user.
This sensor system comprises a plurality of sensors that each detect light from a subject, wherein: the plurality of sensors include a Z sensor that includes a plurality of imaging surface phase difference pixels arranged in a matrix, and an image sensor that includes a plurality of imaging pixels arranged in a matrix; each time one row of imaging surface phase difference pixel signals is read out, the Z sensor transmits, to the image sensor, a transmission signal generated on the basis of the read imaging surface phase difference pixel signals; and the image sensor processes imaging pixel signals specified by the transmission signal from the Z sensor, among one row of imaging pixel signals.
H04N 25/44 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner en lisant partiellement une matrice de capteurs SSIS
H04N 23/54 - Montage de tubes analyseurs, de capteurs d'images électroniques, de bobines de déviation ou de focalisation
H04N 23/67 - Commande de la mise au point basée sur les signaux électroniques du capteur d'image
H04N 25/704 - Pixels spécialement adaptés à la mise au point, p. ex. des ensembles de pixels à différence de phase
