To improve detection accuracy of an event signal while enabling mixed mounting of gradation pixels and event pixels. A photodetection device includes: a gradation pixel that detects a gradation signal; an event pixel that detects an event signal; a light-shielded event pixel in which the event pixel is shielded from light; and a detection circuit that detects a false event output from the event pixel on the basis of an output from the light-shielded event pixel. A correction circuit that corrects a false event detected by the detection circuit may be further included. A notification circuit that notifies of a false event detected by the detection circuit may be further included.
H04N 25/62 - Détection ou réduction du bruit dû aux charges excessives produites par l'exposition, p. ex. les bavures, les éblouissements, les images fantômes, la diaphonie ou les fuites entre les pixels
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
To provide a solid-state image capturing device in which pixel transistors can appropriately be laid out.
To provide a solid-state image capturing device in which pixel transistors can appropriately be laid out.
A solid-state image capturing device according to the present disclosure includes a first substrate, a floating diffuser disposed in the first substrate, a first transistor disposed on the first substrate, a first insulating film disposed on the first substrate and the first transistor, a first interconnect disposed in the first insulating film and electrically connected to the floating diffuser and the first transistor, a second substrate disposed on the first insulating film, a second transistor disposed on the second substrate, and a second insulating film disposed on the second substrate and the second transistor.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
A solid-state imaging device includes: a first base including a photoelectric conversion element that converts light into electric charge; a second base including a first signal processing circuit that performs signal processing on a basis of the electric charge obtained through conversion performed by the photoelectric conversion element and being different from the first base; and a third base including a protection element that is electrically coupled to the first signal processing circuit and absorbs an overcurrent and being different from the first base and the second base.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H04N 25/79 - Agencements de circuits répartis entre des substrats, des puces ou des cartes de circuits différents ou multiples, p. ex. des capteurs d'images empilés
Provided is a light detection device capable of improving the optical characteristics. A light detection device includes: a semiconductor substrate having a first surface and a second surface positioned on a side opposite to the first surface, the semiconductor substrate having a plurality of unit pixels arranged in a matrix pattern and, for each of the unit pixels, a plurality of photoelectric conversion units configured to generate charges corresponding to a light receiving amount through photoelectric conversion; an inter-pixel separation unit provided between the adjacent unit pixels, the inter-pixel separation unit having a gap configured to electrically and optically separate the adjacent unit pixels; an intra-pixel separation unit provided between the adjacent photoelectric conversion units within the unit pixels, the intra-pixel separation unit having a first material layer configured to electrically separate the adjacent photoelectric conversion units; and a connection unit provided between the adjacent unit pixels, the connection unit configured to connect the intra-pixel separation unit of one adjacent unit pixel and the intra-pixel separation unit of the other adjacent unit pixel.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H04N 25/13 - Agencement de matrices de filtres colorés [CFA]Mosaïques de filtres caractérisées par les caractéristiques spectrales des éléments filtrants
H04N 25/772 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F
5.
STORAGE DEVICE, ELECTRONIC APPARATUS, AND STORAGE DEVICE CONTROL METHOD
A storage device according to an aspect of the present disclosure includes: a magnetoresistive element whose magnetization direction is variable between a first state and a second state; a selection element connected to the magnetoresistive element; and a write unit that switches and supplies, to the magnetoresistive element, a first current for bringing the magnetization direction of the magnetoresistive element into the first state and a second current for bringing the magnetization direction of the magnetoresistive element into the second state.
An in-vehicle camera has a first substrate for imaging processing; a second substrate for information transmission; and a metal plate provided between the first substrate and the second substrate. The in-vehicle camera further has a first storage case made of metal that stores the first substrate, and a second storage case made of metal that stores the second substrate, and the metal plate is a part of either the first storage case or the second storage case.
Provided is a memory device including: a magnetoresistive element connected between a first control line and a second control line, a write circuit that controls writing to the magnetoresistive element, and a read circuit that controls reading from the magnetoresistive element. The magnetoresistive element is a voltage-controlled magnetic anisotropy (VCMA) effect magnetoresistive element, and the write circuit controls the magnetoresistive element such that a first voltage for writing in a high resistance state and a second voltage for writing in a low resistance state have opposite directions.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
H10B 61/00 - Dispositifs de mémoire magnétique, p. ex. dispositifs RAM magnéto-résistifs [MRAM]
H10B 63/00 - Dispositifs de mémoire par changement de résistance, p. ex. dispositifs RAM résistifs [ReRAM]
H10N 70/00 - Dispositifs à l’état solide n’ayant pas de barrières de potentiel, spécialement adaptés au redressement, à l'amplification, à la production d'oscillations ou à la commutation
Photodetection elements and electronic devices with suppressed decrease in signal-to-noise ratio are disclosed. In one example, a photodetection element includes a pixel array with first pixels connected to a first signal line and first amplification transistors that amplify potentials from first photoelectric conversion elements and second pixels connected to a second signal line and including second amplification transistors that amplify potentials from second photoelectric conversion elements. A differential amplification circuit amplifies a potential difference of a differential pair, which is the first amplification transistor of a selected first pixel and the second amplification transistor of a selected second pixel, and a determiner determines, on the basis of the potential difference amplified by the differential amplification circuit, whether or not there is an edge between the selected first pixel and the selected second pixel.
H04N 25/778 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des amplificateurs partagés entre une pluralité de pixels, c.-à-d. qu'au moins une partie de l'amplificateur doit se trouver sur la matrice de capteurs elle-même
9.
A METHOD FOR GENERATING A SYNTHETICALLY AUGMENTED DEPTH, CONFIDENCE AND/OR SEGMENTATION IMAGE AS TRAINING DATA FOR TRAINING OF AN ARTIFICIAL NEURAL NETWORK
A method for generating a synthetically augmented depth image as training data for training of an artificial neural network comprising: generating a depth image of a synthetic object; and merging a real depth image of a scene with the generated depth image of the synthetic object to obtain the synthetically augmented depth image.
G06V 10/26 - Segmentation de formes dans le champ d’imageDécoupage ou fusion d’éléments d’image visant à établir la région de motif, p. ex. techniques de regroupementDétection d’occlusion
G06V 20/70 - Étiquetage du contenu de scène, p. ex. en tirant des représentations syntaxiques ou sémantiques
A semiconductor apparatus that includes a charge transfer section, a separation section, and a notch portion. The charge transfer section is configured by a MOS transistor including a first semiconductor region disposed in a semiconductor substrate, a second semiconductor region disposed in the vicinity of a surface of the semiconductor substrate, and a transfer gate disposed in a recess formed in the surface of the semiconductor substrate and having a bottom portion being a gate electrode formed in the vicinity of the first semiconductor region, and is configured to transfer a charge from one of the first semiconductor region and the second semiconductor region to the other. The separation section is embedded in the surface of the semiconductor substrate and is disposed adjacent to a side surface of the transfer gate. The notch portion is formed on the side surface of the transfer gate adjacent to the separation section.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
11.
BACK-ILLUMINATED IMAGING ELEMENT, FLOW CHANNEL UNIT FOR ANALYZING BIOLOGICAL SAMPLE, AND BIOLOGICAL SAMPLE ANALYSIS SYSTEM
An object of the present disclosure is to provide a technique for improving fluorescence detection accuracy in biological sample analysis. The present disclosure provides a back-illuminated imaging element including a plurality of pixel units, each of which includes at least an analyte holding unit configured to hold an analyte and a fluorescence detection unit that detects fluorescence generated by irradiating the analyte with excitation light. In addition, the present disclosure also provides a flow channel unit for analyzing a biological sample including the back-illuminated imaging element. In addition, the present disclosure also provides a biological sample analysis system that analyzes a biological sample using the flow channel unit for analyzing a biological sample.
G01N 15/01 - Recherche de caractéristiques de particulesRecherche de la perméabilité, du volume des pores ou de l'aire superficielle effective de matériaux poreux spécialement adaptée aux cellules biologiques, p. ex. aux cellules sanguines
G01N 15/10 - Recherche de particules individuelles
12.
SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
The present disclosure relates to a solid-state imaging element, a manufacturing method thereof, and an electronic device that enables the improvement of the characteristics of a pixel. A solid-state imaging element includes a semiconductor substrate having a first surface that serves as a light incident surface and a second surface that is on an opposite side the first surface, a first photoelectric conversion unit provided in the semiconductor substrate, a second photoelectric conversion unit provided adjacent to the first photoelectric conversion unit, and a pixel isolation part provided between the first photoelectric conversion unit and the second photoelectric conversion unit. Then, the pixel isolation part has a laminated structure in which a first layer, a second layer, and a third layer are stacked sequentially from the first surface side in a cross-sectional view, and the second layer has a shape in which width thereof is different between the first layer side and the third layer side in a cross-sectional view. Further, the second layer is formed in a self-aligned manner at a predetermined position in an in-plane direction and a depth direction of the semiconductor substrate by utilizing a step portion formed in a middle of a trench provided in the semiconductor substrate. The present technology can be applied to, for example, a stacked type CMOS image sensor.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
For example, a light emitting device having a structure capable of performing arbitrary lateral mode control is provided. A light emitting device includes: a substrate having a first main surface and a second main surface on an opposite side thereof to the first main surface; and a light emitting unit formed on the first main surface of the substrate, in which the light emitting unit includes a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and an active layer disposed between the first structure and the second structure, a groove connected to the second main surface of the substrate is formed in a facing region facing at least a part of a light emitting region of the active layer, and a metal portion is formed inside the groove.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
An increase in the number of state transitions at a time of counting is suppressed. In one example, a photodetection device includes light receiving units that respectively output pulses generated in accordance with incidence of photons. A counter circuit counts the pulses from a respective light receiving unit. The counter circuit includes 2-bit Johnson counters whose states transition on a basis of a transition input. A second bit of a count output of a 2-bit Johnson counter at a preceding stage is used as the transition input of a 2-bit Johnson counter at a subsequent stage. The 2-bit Johnson counters may each include flip-flops connected in two stages, and in each of the plurality of 2-bit Johnson counters, an inverted value of an output of a flip-flop at a subsequent stage may be used as an input of a flip-flop at a preceding stage.
H04N 25/773 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F comprenant des circuits de comptage de photons, p. ex. des diodes de détection de photons uniques [SPD] ou des diodes à avalanche de photons uniques [SPAD]
15.
DISPLAY DEVICE, CONTROL METHOD FOR DISPLAY PANEL, AND ELECTRONIC DEVICE
A display device includes: a display panel including a plurality of pixels; and a control unit that controls the display panel, in which the display panel includes a plurality of pixel blocks each including one or more pixels, the plurality of pixel blocks includes a first pixel block and a second pixel block, and the control unit controls the display panel such that a refresh rate of a pixel in the second pixel block is lower than a refresh rate of a pixel in the first pixel block.
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
16.
DISPLAY DEVICE, METHOD OF DRIVING DISPLAY DEVICE, AND ELECTRONIC APPARATUS
Provided are a display device, a method of driving the display device, and an electronic apparatus capable of preventing occurrence of flicker. The display device includes: a pixel region in which a plurality of pixels is disposed; and a light emission control unit that controls light emission/non-light emission of the pixel, and a length of a light emission period of the pixel in a plurality of divided periods into which one frame of a video to be displayed is divided is adjusted by controlling the light emission and the non-light emission of the pixel.
G09G 3/3233 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active avec un circuit de pixel pour commander le courant à travers l'élément électroluminescent
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
G09G 3/32 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED]
17.
INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, RECORDING MEDIUM, INFERENCE DEVICE, AND CONTROL METHOD
An information processing apparatus according to the present technology includes: a setting control processing unit that causes an inference device that performs inference processing using an AI model to set a designated model that is an AI model designated by a user; and an execution control processing unit that causes the inference device in a state in which the designated model has been set to execute inference processing using data designated by the user as inference target data.
G06V 10/764 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant la classification, p. ex. des objets vidéo
G06N 5/04 - Modèles d’inférence ou de raisonnement
18.
ELECTRONIC DEVICE AND CONTROL METHOD FOR ELECTRONIC DEVICE
Electronic devices with built-in components including an antenna and transmission lines, with electromagnetic interference suppression are disclosed. In one example, an electronic device includes an antenna, a plurality of transmission lines, and a control unit. In the electronic device including the antenna, the plurality of transmission lines, and the control unit, signals are transmitted through the plurality of transmission lines. Furthermore, in the electronic device including the antenna, the plurality of transmission lines, and the control unit, the control unit controls the directivity of electromagnetic waves radiated from the plurality of transmission lines on the basis of the reception performance of the antenna.
This magnetic memory element comprises: a fixed layer in which a magnetization direction is fixed; a free layer in which a magnetization direction can be reversed; and a barrier layer which is provided between the fixed layer and the free layer so as to obtain a tunnel magnetoresistance (TMR) effect. The magnetization of the free layer is reversed by a voltage-controlled magnetic anisotropy (VCMA) effect by means of voltage application. The barrier layer contains MgO and at least one of Fe, Co, Mn, V, and Ti.
The present invention makes it possible to change sensitivity of a photoelectric conversion unit while suppressing an increase in circuit scale. This imaging device comprises: a photoelectric conversion unit provided in a pixel; and a transfer transistor capable of transferring signals from the photoelectric conversion unit in mutually different directions. The transfer transistor may transfer charges accumulated in the photoelectric conversion unit in a first direction and transfer a detection value of the potential of the photoelectric conversion unit in a second direction. The transfer transistor may have a transfer function of transferring the charges accumulated in the photoelectric conversion unit in the first direction, and a threshold modulation function of modulating a threshold on the basis of the charges accumulated in the photoelectric conversion unit and transferring the detection value of the potential of the photoelectric conversion unit in the second direction.
The present disclosure relates to a distance measurement module that makes it possible to improve the light shielding performance of a first light-receiving unit that receives measurement light and a second light-receiving unit that receives reference light. This distance measurement module comprises: a light source unit (31) that emits irradiation light; a first light-receiving unit (51A) that receives, as measurement light, reflected light obtained by the irradiation light being reflected by an object to be measured; a second light-receiving unit (51B) that receives, as reference light, some of the irradiation light passing through a light guide path (101) in a device; a first light-shielding wall (71) that shields light between a light-emitting space in which the light source unit is disposed and a light-receiving space in which the first light-receiving unit and the second light-receiving unit are disposed; and a second light-shielding wall (72) that shields light between the first light-receiving unit and the second light-receiving unit in the light-receiving space. The technology of the present disclosure can be applied, for example, to a distance measurement module or the like that detects the distance to a subject.
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
H10F 55/00 - Dispositifs à semi-conducteurs sensibles au rayonnement couverts par les groupes , ou structurellement associés à des sources lumineuses électriques et électriquement ou optiquement couplés avec lesdites sources
[Problem] To reduce pixel size and improve S/N ratio. [Solution] A light detection device is provided with: a plurality of pixels each having a photoelectric conversion element; a first circuit that is provided for each pixel group including two or more pixels among the plurality of pixels, and that adds or counts signals output from at least one pixel included in the pixel group; and a second circuit that performs, in parallel with the first circuit, processing that adds or counts signals output from at least one pixel among the pixels included in the pixel group, where at least some of the pixels differ from the first circuit.
H04N 25/76 - Capteurs adressés, p. ex. capteurs MOS ou CMOS
H04N 25/40 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner
H04N 25/46 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner en combinant ou en groupant les pixels
H04N 25/75 - Circuits pour fournir, modifier ou traiter des signaux d'image provenant de la matrice de pixels
A semiconductor memory device according to the present disclosure comprises a plurality of capacitors stacked in a first direction, and one field effect transistor provided so as to be electrically connectable to each of the plurality of capacitors. Each of the plurality of capacitors includes a first electrode, a second electrode facing the first electrode along a plane orthogonal to the first direction, a ferroelectric layer provided between the first electrode and the second electrode, a first buffer layer provided between the ferroelectric layer and the first electrode, and a second buffer layer provided between the ferroelectric layer and the second electrode. The field effect transistor is provided so as to be electrically connectable to the first electrode of each of the plurality of capacitors.
H10B 53/20 - Dispositifs RAM ferro-électrique [FeRAM] comprenant des condensateurs ferro-électriques de mémoire caractérisés par les agencements tridimensionnels, p. ex. avec des cellules à des niveaux différents de hauteur
H10B 51/20 - Dispositifs de RAM ferro-électrique [FeRAM] comprenant des transistors ferro-électriques de mémoire caractérisés par les agencements tridimensionnels, p. ex. avec des cellules à des niveaux différents de hauteur
A speed detection device according to one embodiment of the present technology comprises: a plurality of transmission antennas; a plurality of reception antennas; a chirp control unit; and a speed detection unit. The plurality of transmission antennas transmit a plurality of chirp signals. The plurality of reception antennas receive the plurality of chirp signals reflected by an object. The chirp control unit controls the plurality of chirp signals so that the chirp signals are simultaneously transmitted from the plurality of transmission antennas, while changing the combination of phases of the plurality of chirp signals for each of a plurality of time slots. The speed detection unit detects the speed of the object on the basis of the signals from the plurality of reception antennas. The chirp control unit sets, to different intervals, at least two intervals of time slots in which the combination of the phases of the plurality of chirp signals become the same.
G01S 13/58 - Systèmes de détermination de la vitesse ou de la trajectoireSystèmes de détermination du sens d'un mouvement
G01S 7/02 - Détails des systèmes correspondant aux groupes , , de systèmes selon le groupe
G01S 13/34 - Systèmes pour mesurer la distance uniquement utilisant la transmission d'ondes continues, soit modulées en amplitude, en fréquence ou en phase, soit non modulées utilisant la transmission d'ondes continues modulées en fréquence, tout en faisant un hétérodynage du signal reçu, ou d’un signal dérivé, avec un signal généré localement, associé au signal transmis simultanément
This information processing device comprises a search processing unit that searches for a subnet satisfying a predetermined condition from a supernet by means of a neural architecture search. The search processing unit performs processing for inferring characteristic-related evaluation information for each subnet serving as a candidate by means of a characteristic-related evaluation model that infers characteristic-related evaluation information using subnet architecture information as input and is an AI model trained to learn the correspondence relationship between subnet architecture information indicating the architecture of a subnet and characteristic-related evaluation information related to the characteristics of an AI processing device for performing inference processing using an AI model, then performs a subnet search using the inferred characteristic-related evaluation information as an evaluation index in the search.
A signal processing device according to the present technology includes a first edge emphasis section that inputs an event image that is an image indicating an event detection result by an event detection pixel group including a plurality of event pixels that detect, as an event, a change in an amount of light received by a light receiving element by a predetermined amount or more, and performs edge emphasis processing on the event image on a basis of an edge direction of a subject detected on a basis of a grayscale image obtained by a grayscale pixel group including a plurality of grayscale pixels that detect an amount of light received by a light receiving element by a grayscale value of a predetermined level.
G06V 10/60 - Extraction de caractéristiques d’images ou de vidéos relative aux propriétés luminescentes, p. ex. utilisant un modèle de réflectance ou d’éclairage
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
Luminance information is obtained using pixels that detect luminance changes. A photodetection device includes a plurality of pixels that detects events based on an amount of change in illuminance of incident light and that detects noise events whose rate of occurrence changes in accordance with the illuminance of the incident light, and a luminance information generation unit that generates luminance information for each of the plurality of pixels on the basis of the number of noise events that have occurred in the pixel.
H04N 25/707 - Pixels pour la détection d’événements
H04N 25/62 - Détection ou réduction du bruit dû aux charges excessives produites par l'exposition, p. ex. les bavures, les éblouissements, les images fantômes, la diaphonie ou les fuites entre les pixels
To suppress variations in charge injection due to a switching operation at the time of sampling and holding.
To suppress variations in charge injection due to a switching operation at the time of sampling and holding.
An imaging element of the present technology includes a pixel array unit and a sample-and-hold circuit provided corresponding to a pixel column of the pixel array unit. The sample-and-hold circuit includes: first and second capacitive elements; first and second sampling transistors connected in series to the first and second capacitive elements; first and second write transistors that are connected between an input terminal and the first and second sampling transistors, and write a reset signal and a data signal input from the input terminal to the first and second capacitive elements; first and second read transistors that read the reset signal and the data signal written to the first and second capacitive elements; and a reset transistor connected between an output terminal and a node of a predetermined reference potential.
An image processing configuration that determines whether a processing overrun has occurred following generation of a first clipped image based on a first frame of image data captured by an image sensor; acquires a second frame of image data captured by the image sensor after the first frame of image data has been captured; generates a second clipped image based on the second frame of image data and second movement data corresponding to movement of the image sensor while capturing the second frame of image data in a case it is determined that the processing overrun has not occurred; generates the second clipped image based on the second frame of image data and first movement data corresponding to movement of the image sensor while capturing a previous frame of image data in a case it is determined that the processing overrun has occurred; and outputs the second clipped image.
H04N 23/68 - Commande des caméras ou des modules de caméras pour une prise de vue stable de la scène, p. ex. en compensant les vibrations du boîtier de l'appareil photo
30.
ELECTROCHEMICAL SENSOR UNIT, ODOR COMPONENT ELECTROCHEMICAL SENSOR UNIT, AND METHOD FOR MANUFACTURING ELECTROCHEMICAL SENSOR UNIT
The present technology provides an electrochemical sensor unit and the like including two or more electrochemical sensor parts each connected to one AC signal generation unit, in which each of the electrochemical sensor parts includes a sensitive membrane having a physical property that changes in response to a chemical substance in a sample, and the sensitive membranes are separated from each other via at least one of an insulating membrane or an electrode in plan view. At least some of the electrochemical sensor parts may be arranged in an array.
[Problem] Output can be improved. [Solution] This resonant tunneling diode comprises: a first electrode layer that is disposed on a support substrate which contains a nitride semiconductor material; a first spacer layer that is disposed on the first electrode layer; an active layer that is disposed on the first spacer layer; a second spacer layer that is disposed on the active layer; and a second electrode layer that is disposed on the second spacer layer. The average value of the band gap in the second spacer layer is smaller than the average value of the band gaps in the first electrode layer and the second electrode layer.
The present technology pertains to an encoder, a decoder, and an optical sensor that make it possible to compress, while suppressing deterioration in image quality, a captured image composed of pixel values acquired by a clocked detector (CLK-DET) method in which counting of photons incident on a pixel during a count period for which a maximum count value of the photons is determined is performed as many times as the number of count periods in an exposure time, and a pixel value is acquired on the basis of a count value obtained by counting the photons. The encoder encodes a captured image composed of pixel values acquired by the CLK-DET method, on the basis of an encoding parameter generated on the basis of a CLK-DET parameter of the CLK-DET method. The decoder decodes the encoded data obtained by the encoding. The present technology can be applied, for example, to compression of a captured image composed of pixel values acquired by the CLK-DET method.
H04N 19/102 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le codage adaptatif caractérisés par l’élément, le paramètre ou la sélection affectés ou contrôlés par le codage adaptatif
H04N 19/136 - Caractéristiques ou propriétés du signal vidéo entrant
H04N 23/60 - Commande des caméras ou des modules de caméras
The present disclosure relates to a communication system and a communication method that enable easier achievement of time synchronization. This communication system comprises a first communication device that collectively stores image data and audio data in one CSI-2 packet based on the CSI-2 standard, and transmits the CSI-2 packet in accordance with the CSI-2 standard, and a second communication device that receives the CSI-2 packet and separates the image data and the audio data. The communication system utilizes the I2C standard to time-synchronize the transmission side for transmitting the CSI-2 packet and the reception side for receiving the CSI-2 packet. The present technology can be applied to, for example, a communication system that transmits image data and audio data.
The present invention eliminates the need for synchronization between a transmitter and a receiver in a communication system for performing communication by using time interleaving. This transmitter is provided with: a downlink transmitter that converts a digital signal indicating a transmission wave to an analog signal through time interleaving in synchronization with a prescribed transmission-side multi-phase clock signal and transmits the analog signal via a prescribed transmission path; and a transmission-side calibration processing unit that analyzes reception data and adjusts the skew of the transmission-side multi-phase clock signal so as to reduce spurious emissions on the transmission side. This receiver is provided with: a downlink receiver that converts an analog signal to a digital signal through time interleaving in synchronization with a prescribed reception-side multi-phase clock signal and outputs the digital signal as reception data; and a transmission-side calibration processing unit that analyzes the reception data and adjusts the skew of the reception-side multi-phase clock signal so as to reduce spurious emissions on the reception side.
H04L 7/033 - Commande de vitesse ou de phase au moyen des signaux de code reçus, les signaux ne contenant aucune information de synchronisation particulière en utilisant les transitions du signal reçu pour commander la phase de moyens générateurs du signal de synchronisation, p. ex. en utilisant une boucle verrouillée en phase
The present invention provides a surface-emitting laser capable of suppressing a decrease in light emission efficiency. A surface-emitting laser according to the present technology comprises a resonator including at least one active layer and at least one tunnel junction layer stacked with the active layer. When the wavelength of a standing wave generated in the resonator is λ, an optical distance between the active layer and the tunnel junction layer is longer than λ/4. The surface-emitting laser according to the present technology makes it possible to provide a surface-emitting laser capable of suppressing a decrease in light emission efficiency.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/0234 - Montage à orientation inversée, p. ex. puce retournée [flip-chip], montage à côté épitaxial au-dessous ou montage à jonction au-dessous
H01S 5/0237 - Fixation des puces laser sur des supports par soudage
36.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING SYSTEM
The present technology pertains to an information processing device, an information processing method, and an information processing system enabling suitable correction of deterioration that occurs in an image due to compression coding. This information processing device is provided with a correction processing unit. With respect to decoded data obtained by decoding a bitstream obtained by compression-coding image data that includes a maximum/minimum pixel which is a pixel for which a maximum value or minimum value is set as the pixel value, the correction processing unit corrects the pixel value of a corresponding pixel, which is a pixel estimated to correspond to the maximum/minimum pixel of the image data, so that the pixel value becomes the maximum value or minimum value. The present technology can be applied, for example, to an electronic apparatus equipped with an image sensor.
H04N 19/85 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant le pré-traitement ou le post-traitement spécialement adaptés pour la compression vidéo
37.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING SYSTEM
The present invention performs, for example, prediction related to a failure of a sensor. This information processing device comprises a failure prediction unit that receives, as an input, evaluation information related to normality of a sensor, and outputs a prediction result related to a failure of the sensor.
H04N 25/683 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit appliqué aux défauts par l'estimation des défauts effectuée sur le signal de la scène, p. ex. détection en temps réel ou à la volée
The present disclosure relates to a method for assisting with object recognition by using an electronic device, and an electronic device, a sensor, a program product, an apparatus and a storage medium. In the method, a sensor captures a first image of an object, and detects, on the basis of the first image, position information of the object; the sensor captures a second image of the object, and sends the second image and the position information to a processor, wherein the position of the object in the first image corresponds to the position of the object in the second image; and the processor processes the second image on the basis of the position information, and generates a third image for recognizing the object, wherein the third image corresponds to a region of interest that comprises the object and a surrounding region thereof. According to the present disclosure, the object recognition distance of the electronic device can be increased, the user experience can be improved, and the power consumption for object recognition can also be reduced.
Provided is an apparatus for processing image data. The apparatus includes processing circuitry configured to receive the image data indicating a region of the ground in front of a user and a portion of the user's lower body from a top-down perspective relative to the user. The processing circuitry is further configured to determine, based on the image data, at least one of a condition related to the user and a condition related to the user's environment. The processing circuitry is further configured to cause notification of the user if the condition is determined to present a risk or an anomaly.
A photodetector according to an embodiment of the present disclosure includes: a lens on which light is incident; a first photoelectric conversion section that photoelectrically converts light transmitted through the lens; a second photoelectric conversion section provided next to the first photoelectric conversion section and photoelectrically converting light transmitted through the lens; and a first light-guiding member provided above the first photoelectric conversion section and having a refractive index higher than a refractive index of an adjacent medium.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
The disclosure pertains to an imaging sensor that includes a photosensitive element. The photosensitive element is configured to integrate incident light and stop the integration of incident light when a signal is detected in the incident light integrated by the photosensitive element.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01S 17/894 - Imagerie 3D avec mesure simultanée du temps de vol sur une matrice 2D de pixels récepteurs, p. ex. caméras à temps de vol ou lidar flash
G01S 17/931 - Systèmes lidar, spécialement adaptés pour des applications spécifiques pour prévenir les collisions de véhicules terrestres
H04N 25/533 - Commande du temps d'intégration en utilisant des temps d'intégration différents pour les différentes régions du capteur
H04N 25/773 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des convertisseurs A/N, V/T, V/F, I/T ou I/F comprenant des circuits de comptage de photons, p. ex. des diodes de détection de photons uniques [SPD] ou des diodes à avalanche de photons uniques [SPAD]
42.
IMAGING DEVICE, CONTROL DEVICE, AND SPIKING NEURAL NETWORK
Saturation of an event output is suppressed while a decrease in sensitivity is suppressed. An imaging device includes: a light receiving section that is provided in pixels arranged in a matrix in a row direction and a column direction and outputs a pulse on the basis of incidence of photons; a counter that is provided in the pixels and counts the pulse output from the light receiving section; and a comparator that is provided in the pixels and outputs an event on the basis of a comparison result between a count value by the counter and a counter threshold. The comparator may output the event when the count value exceeds the counter threshold. The comparator may reset the counter when the count value exceeds the counter threshold.
G06N 3/049 - Réseaux neuronaux temporels, p. ex. éléments à retard, neurones oscillants ou entrées impulsionnelles
G06N 3/067 - Réalisation physique, c.-à-d. mise en œuvre matérielle de réseaux neuronaux, de neurones ou de parties de neurone utilisant des moyens optiques
43.
INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND PROGRAM
There is provided an information processing apparatus, including a display data generation unit configured to receive an image obtained by imaging surroundings of a vehicle, generate display data representing at least one parking division area, and superimpose the display data on the image, wherein the display data include an upward extension surface extending from a vehicle contact surface of the at least one parking division area.
G08G 1/14 - Systèmes de commande du trafic pour véhicules routiers indiquant des places libres individuelles dans des parcs de stationnement
B60K 35/28 - Dispositions de sortie, c.-à-d. du véhicule à l'utilisateur, associées aux fonctions du véhicule ou spécialement adaptées à celles-ci caractérisées par le type d’informations de sortie, p. ex. divertissement vidéo ou informations sur la dynamique du véhiculeDispositions de sortie, c.-à-d. du véhicule à l'utilisateur, associées aux fonctions du véhicule ou spécialement adaptées à celles-ci caractérisées par la finalité des informations de sortie, p. ex. pour attirer l'attention du conducteur
B60W 50/14 - Moyens d'information du conducteur, pour l'avertir ou provoquer son intervention
G06V 20/58 - Reconnaissance d’objets en mouvement ou d’obstacles, p. ex. véhicules ou piétonsReconnaissance des objets de la circulation, p. ex. signalisation routière, feux de signalisation ou routes
44.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
This information processing device comprises: a first selection unit that selects multiple pieces of imaging data from among a plurality of pieces of imaging data captured by a camera; and a second selection unit that selects, from the multiple pieces of imaging data selected by the first selection unit, imaging data to be used as an input to reconstruction processing.
G06T 19/00 - Transformation de modèles ou d'images tridimensionnels [3D] pour infographie
G06F 3/01 - Dispositions d'entrée ou dispositions d'entrée et de sortie combinées pour l'interaction entre l'utilisateur et le calculateur
G06F 3/04815 - Interaction s’effectuant dans un environnement basé sur des métaphores ou des objets avec un affichage tridimensionnel, p. ex. modification du point de vue de l’utilisateur par rapport à l’environnement ou l’objet
G06F 3/04845 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] pour la commande de fonctions ou d’opérations spécifiques, p. ex. sélection ou transformation d’un objet, d’une image ou d’un élément de texte affiché, détermination d’une valeur de paramètre ou sélection d’une plage de valeurs pour la transformation d’images, p. ex. glissement, rotation, agrandissement ou changement de couleur
G06T 7/55 - Récupération de la profondeur ou de la forme à partir de plusieurs images
H04N 23/60 - Commande des caméras ou des modules de caméras
45.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
This information processing device comprises: a selection unit that performs selection from a plurality of pieces of imaging data captured by a camera; and an information calculation unit that calculates information relating to the quality of a reconstruction result when the imaging data selected by the selection unit is used as an input for a reconstruction process.
G06T 19/00 - Transformation de modèles ou d'images tridimensionnels [3D] pour infographie
G06F 3/01 - Dispositions d'entrée ou dispositions d'entrée et de sortie combinées pour l'interaction entre l'utilisateur et le calculateur
G06F 3/04815 - Interaction s’effectuant dans un environnement basé sur des métaphores ou des objets avec un affichage tridimensionnel, p. ex. modification du point de vue de l’utilisateur par rapport à l’environnement ou l’objet
G06F 3/04845 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] pour la commande de fonctions ou d’opérations spécifiques, p. ex. sélection ou transformation d’un objet, d’une image ou d’un élément de texte affiché, détermination d’une valeur de paramètre ou sélection d’une plage de valeurs pour la transformation d’images, p. ex. glissement, rotation, agrandissement ou changement de couleur
G06T 7/55 - Récupération de la profondeur ou de la forme à partir de plusieurs images
H04N 23/60 - Commande des caméras ou des modules de caméras
46.
IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, PROGRAM, GENERATION METHOD, IMAGING APPARATUS, SEMICONDUCTOR APPARATUS, AND INFORMATION PROCESSING APPARATUS
The present disclosure relates to an image processing apparatus, an image processing method, a program, a generation method, an imaging apparatus, a semiconductor apparatus, and an information processing apparatus with which it is possible to more appropriately generate an image that has a wide dynamic range. Provided is an image processing apparatus comprising a processing unit that, on the basis of a single first image that has a first gradation and a first signal range, virtually generates a signal distribution comprising a second gradation that is higher than the first gradation and a second signal range that is higher than the first signal range. For example, the present disclosure can be applied to an image processing apparatus that generates a virtual HDR image from an SDR image.
G06T 5/90 - Modification de la plage dynamique d'images ou de parties d'images
G06T 5/60 - Amélioration ou restauration d'image utilisant l’apprentissage automatique, p. ex. les réseaux neuronaux
G06V 10/70 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique
H04N 23/60 - Commande des caméras ou des modules de caméras
H04N 23/741 - Circuits de compensation de la variation de luminosité dans la scène en augmentant la plage dynamique de l'image par rapport à la plage dynamique des capteurs d'image électroniques
Provided is a magnetoresistive element which comprises: a multilayer structure that includes a non-magnetic layer, and first and second magnetic layers which hold the non-magnetic layer therebetween from above and below; and a first protective film that covers at least a part of the side surface of the multilayer structure. The first protective film is formed of silicon nitride, and the silicon nitride contains nitrogen in an amount of 28 at% to 53 at% inclusive.
In an embodiment, a light emitting device comprises a substrate including a plurality of light emitting sections and a film disposed on the substrate. The substrate includes a groove surface at an end of a surface of the substrate.
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/42 - Réseaux de lasers à émission de surface
Event detection pixels with distortion correction are disclosed. In one example, a solid-state imaging device includes an optical system, a first pixel, a second pixel, a pixel array, and a signal processing circuit. The first pixel obtains image information based on luminance information via the optical system. The second pixel obtains event detection information based on a change in the luminance information via the optical system. The pixel array includes the first pixels and the second pixels in a two-dimensional array. The signal processing circuit selects whether or not to perform distortion correction on the event detection information obtained by the second pixel and performs signal processing.
H04N 25/707 - Pixels pour la détection d’événements
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H04N 25/702 - Architectures de capteurs SSIS caractérisées par une disposition non identique, non équidistante ou non plane des pixels
50.
INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND COMPUTER-READABLE NON-TRANSITORY STORAGE MEDIUM
An information processing apparatus includes processing circuitry configured to input a target area and a distortion intensity of the target area into a trained model, wherein the target area is at least a part of a wide-angle image. Additionally, the processing circuitry is further configured to identify, based on an output of the trained model, a detection target included in the target area.
G06V 10/98 - Détection ou correction d’erreurs, p. ex. en effectuant une deuxième exploration du motif ou par intervention humaineÉvaluation de la qualité des motifs acquis
G06V 10/12 - Détails des dispositions d’acquisitionLeurs détails structurels
G06V 10/774 - Génération d'ensembles de motifs de formationTraitement des caractéristiques d’images ou de vidéos dans les espaces de caractéristiquesDispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p. ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]Séparation aveugle de source méthodes de Bootstrap, p. ex. "bagging” ou “boosting”
G06V 10/94 - Architectures logicielles ou matérielles spécialement adaptées à la compréhension d’images ou de vidéos
G06V 40/10 - Corps d’êtres humains ou d’animaux, p. ex. occupants de véhicules automobiles ou piétonsParties du corps, p. ex. mains
51.
SEMICONDUCTOR PACKAGE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR PACKAGE
To improve heat dissipation performance in a semiconductor package in which wire bonding is performed.
To improve heat dissipation performance in a semiconductor package in which wire bonding is performed.
A semiconductor package includes a semiconductor chip, a package substrate, a Peltier element, a first wire, and a second wire. In this semiconductor package, the Peltier element cools a predetermined relay pad and the semiconductor chip. Furthermore, in the semiconductor package, the first wire connects the semiconductor chip and the relay pad. Furthermore, the second wire connects the relay pad and the package substrate.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
In a photodetection apparatus that performs TDI processing, multistage TDI processing is further achieved.
In a photodetection apparatus that performs TDI processing, multistage TDI processing is further achieved.
A photodetection apparatus according to the present technology includes: a pixel array unit in which pixel circuits each including a photon detection unit and a counter are arranged in a matrix and which constitutes a pixel unit with N stages (N is an integer) as one unit for each pixel column; a holding array unit which is provided outside the pixel array unit and holds a count value read from the pixel unit; and a control unit which reads the count value for each pixel unit with M (M is an integer) pixel units as a unit. The holding array unit includes: (M-1) holding units each having a holding unit at N stages that holds a count value read from one pixel unit of the M pixel units; and (M-1) addition circuits that add a held value of a holding unit at a final stage in the holding unit at the N stages and a count value read from a pixel unit of a next stage of the one pixel unit.
To implement quick and smooth parking assistance close to a human sense without being affected by an environment of a parking space.
To implement quick and smooth parking assistance close to a human sense without being affected by an environment of a parking space.
A 3D semantic segmentation image having a plurality of pixel units, each pixel unit of the plurality of pixel units including the depth data and class information, are generated, an available parking space is searched for on the basis of the 3D semantic segmentation image, and a path to the searched parking space is planned and a vehicle is controlled. The present disclosure can be applied to a parking assistance system.
G06T 7/50 - Récupération de la profondeur ou de la forme
G06V 10/44 - Extraction de caractéristiques locales par analyse des parties du motif, p. ex. par détection d’arêtes, de contours, de boucles, d’angles, de barres ou d’intersectionsAnalyse de connectivité, p. ex. de composantes connectées
G06V 10/764 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant la classification, p. ex. des objets vidéo
54.
ELECTRONIC CIRCUIT, COMPARATOR, AND IMAGING DEVICE
The present invention prevents GIDL generated by a clamp circuit from propagating to an input voltage. This electronic circuit comprises: a transistor that amplifies an input signal; a clamp circuit that clamps the input signal; and a switch that is connected between the clamp circuit and an input of the transistor. The electronic circuit may further comprise a detection circuit that opens and closes the switch on the basis of the detection result of the output of the transistor. When the input signal exceeds a prescribed voltage, the switch may be turned off, and when the input signal is equal to or less than the prescribed voltage, the switch may be turned on.
H03F 3/08 - Amplificateurs comportant comme éléments d'amplification uniquement des tubes à décharge ou uniquement des dispositifs à semi-conducteurs comportant uniquement des dispositifs à semi-conducteurs commandés par la lumière
H03K 5/08 - Mise en forme d'impulsions par limitation, par application d'un seuil, par découpage, c.-à-d. par application combinée d'une limitation et d'un seuil
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
A light detection device according to one embodiment of the present disclosure comprises: a semiconductor substrate that has a first surface where light is incident, and a second surface located on the opposite side from the first surface, a plurality of pixels being arranged in a two-dimensional array on said semiconductor substrate, and said plurality of pixels including a first pixel that detects light in a first wavelength band among the incident light; and a light guide unit that is positioned on the first surface side of the semiconductor substrate and includes a first wavelength condensing region for condensing, on the first pixel, light in the first wavelength band among the incident light. The light guide unit has a first condensing point where the light in the first wavelength band is condensed substantially in the center of the first pixel. The first wavelength condensing region has an area that is greater than the area of the first pixel, and extends asymmetrically from the first condensing point.
[Problem] To provide an imaging device capable of further suppressing noise. [Solution] This imaging device comprises: a plurality of pixels arranged in columns in a first layer and having a charge-voltage conversion unit for converting charge corresponding to the amount of incident light into voltage, the plurality of pixels being configured from a plurality of pixel groups; a reference signal supply unit configured in a layer different from the first layer, and supplies a prescribed reference signal to the charge-voltage conversion unit; and a comparator configured in a second layer stacked on the first layer, the comparator comparing a prescribed reference voltage and the voltage of a signal line for transmitting an analog pixel signal output from a pixel to which the reference signal has been supplied. The signal line is configured from a plurality of first signal lines for each of the plurality of pixel groups.
H04N 25/79 - Agencements de circuits répartis entre des substrats, des puces ou des cartes de circuits différents ou multiples, p. ex. des capteurs d'images empilés
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
The present technology relates to an imaging element and an electronic apparatus that make it possible to provide an imaging element in which the occurrence of noise is suppressed. In this invention, a first light-shielding part and a second light-shielding part each have a vertical light-shielding part extending in a wall shape in a direction orthogonal to a first surface, and a horizontal light-shielding part extending in a plate shape in a direction parallel to the first surface, and are arranged so as to cover at least a part of a region where the horizontal light-shielding part of the first light-shielding part is not disposed when viewed from the direction orthogonal to the first surface. A divided region that is divided is disposed in one of the first light-shielding part and the second light-shielding part, and a diffusion region is disposed in the divided region. The present technology can be applied to, e.g., an imaging element.
Provided is a light-emitting device that can highly-accurately monitor light output of a light-emitting element. The present technology provides a light-emitting device comprising a surface light-emitting element and a light-receiving element. The surface light-emitting element emits light in a prescribed direction. The light-receiving element receives monitor light leaking in at least one direction different from the prescribed direction, and has a smaller size than the surface light-emitting element. The present technology also provides a light-emitting device comprising: a difference detection unit that detects the difference between a reference value and an input/output signal corresponding to each of a plurality of light-emitting elements; an event generation unit that generates an event on the basis of a result of comparison between said difference and a prescribed threshold value; and an output unit that outputs event information including identification information for identifying a light-emitting element that is a source of the generated event.
H01S 5/026 - Composants intégrés monolithiques, p. ex. guides d'ondes, photodétecteurs de surveillance ou dispositifs d'attaque
H01S 5/40 - Agencement de plusieurs lasers à semi-conducteurs, non prévu dans les groupes
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
H01S 5/185 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités horizontales, p. ex. lasers à émission de surface à cavité horizontale [HCSEL]
H01S 5/0239 - Combinaisons d’éléments électriques ou optiques
H10F 30/223 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel étant du type PIN
H10F 30/225 - Dispositifs individuels à semi-conducteurs sensibles au rayonnement dans lesquels le rayonnement commande le flux de courant à travers les dispositifs, p. ex. photodétecteurs les dispositifs ayant des barrières de potentiel, p. ex. phototransistors les dispositifs étant sensibles au rayonnement infrarouge, visible ou ultraviolet les dispositifs ayant une seule barrière de potentiel, p. ex. photodiodes la barrière de potentiel fonctionnant en régime d'avalanche, p. ex. photodiodes à avalanche
[Problem] To provide a semiconductor device capable of transmitting a signal to be transmitted, which is transmitted via a plurality of transmission circuits, to a far end at a desired timing. [Solution] This semiconductor device comprises: a plurality of transmission circuits that are connected in series and sequentially transmit signals to be transmitted; and an adjustment control circuit that individually adjusts the transmission capability of each of the plurality of transmission circuits.
[Problem] To suppress an event caused by flickering of a light source. [Solution] Provided is an imaging system comprising: a signal generation unit that generates a time-series event signal in which a first event signal and a second event signal are positively and negatively inverted at a baseline, the first event signal indicating, for each time-series time, the number of times that the absolute value of a positive-side amount of change in which a pixel signal generated by a pixel having a photoelectric conversion element increases exceeds a prescribed threshold value, the second event signal indicating, for each time-series time, the number of times that the absolute value of a negative-side amount of change in which the pixel signal decreases exceeds a prescribed threshold value; and a determination unit that determines whether or not the event signal is caused by flickering on the basis of a value relating to a phase in a multiplication value obtained from the event signal and a flicker detection signal which has the same frequency as a frequency to be detected.
H04N 23/60 - Commande des caméras ou des modules de caméras
H04N 23/745 - Détection de la fréquence de scintillement ou suppression du scintillement, le scintillement étant causé par l'éclairage, p. ex. par l'éclairage d'un tube fluorescent ou d'une LED pulsée
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
61.
APPARATUS AND METHOD FOR GENERATING AN IMAGE SEQUENCE
Provided is an apparatus for generating an image sequence based on a multimodal input. The apparatus comprises processing circuitry configured to receive a plurality of encoded tokens. Each token represents a modality based on which the image sequence is to be generated by a trained machine-learning model. The processing circuitry is further configured to concatenate the plurality of encoded tokens to obtain a latent vector for the trained machine-learning model. The processing circuitry is further configured to generate the image sequence using the trained machine-learning model. The machine-learning model receives the latent vector as input
This information processing device comprises: a first determination unit that determines whether or not a plurality of imaging data items captured by a camera are sufficient in reconfiguration processing; and a reconfiguration processing unit that, when the first determination unit has determined that the plurality of imaging data items are sufficient in the reconfiguration processing, performs the reconfiguration processing by using the plurality of imaging data items as input and generates a reconfiguration result.
G06T 1/00 - Traitement de données d'image, d'application générale
G06F 3/04815 - Interaction s’effectuant dans un environnement basé sur des métaphores ou des objets avec un affichage tridimensionnel, p. ex. modification du point de vue de l’utilisateur par rapport à l’environnement ou l’objet
G06F 3/04845 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] pour la commande de fonctions ou d’opérations spécifiques, p. ex. sélection ou transformation d’un objet, d’une image ou d’un élément de texte affiché, détermination d’une valeur de paramètre ou sélection d’une plage de valeurs pour la transformation d’images, p. ex. glissement, rotation, agrandissement ou changement de couleur
G06T 19/00 - Transformation de modèles ou d'images tridimensionnels [3D] pour infographie
H04N 23/60 - Commande des caméras ou des modules de caméras
63.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
This information processing device comprises: a data selection unit that, on the basis of metadata corresponding to a plurality of pieces of imaging data generated by imaging with a plurality of cameras, and/or instruction information indicating an instruction related to a reconfiguration result, selects imaging data to be used for generating a reconfiguration result from the plurality of pieces of imaging data; and a reconfiguration processing unit that generates the reconfiguration result by means of three-dimensional reconfiguration processing on the basis of the imaging data selected by the data selection unit.
G06F 3/04815 - Interaction s’effectuant dans un environnement basé sur des métaphores ou des objets avec un affichage tridimensionnel, p. ex. modification du point de vue de l’utilisateur par rapport à l’environnement ou l’objet
G06F 3/04845 - Techniques d’interaction fondées sur les interfaces utilisateur graphiques [GUI] pour la commande de fonctions ou d’opérations spécifiques, p. ex. sélection ou transformation d’un objet, d’une image ou d’un élément de texte affiché, détermination d’une valeur de paramètre ou sélection d’une plage de valeurs pour la transformation d’images, p. ex. glissement, rotation, agrandissement ou changement de couleur
G06T 7/55 - Récupération de la profondeur ou de la forme à partir de plusieurs images
H04N 23/60 - Commande des caméras ou des modules de caméras
64.
INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
A system for three-dimensional reconfiguration of an object comprising: circuitry configured to: in response to a first input, provide on a display a three-dimensional construction of the object and a plurality of visual indicators positioned relative to the three-dimensional construction of the object, and in response to a selection to select one of the plurality of visual indicators that visually identifies the requirement for correction, transition from providing on the display the three-dimensional construction of the object to providing the selected corresponding two-dimensional view of the object. Each of the visual indicators can be associated with previously captured image view data corresponding to different two-dimensional views of the object and can visually identify whether or not the corresponding two-dimensional view of the object requires correction. The selected corresponding two-dimensional view of the object can be provided on the display with an identification corresponding to the requirement for correction.
Imaging elements with suppressed noise generation are disclosed. In one example, an imaging element includes a semiconductor substrate, a photoelectric conversion section, a charge holding section MEM, a first light shielding section, and a second light shielding section. The light shielding sections include vertical light shielding sections and horizontal light shielding sections with a hexagonal shape when viewed from a direction orthogonal to a first surface of the substrate. The horizontal light shielding section of the second light shielding section is disposed closer to the second surface than the horizontal light shielding section of the first light shielding section, and is disposed to cover at least a part of a region where the horizontal light shielding section of the first light shielding section is not disposed.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
To prevent a decrease in magnetic anisotropy modulation efficiency while improving crystallinity of a magnetic layer in a magnetic memory element. A magnetic memory element includes a storage layer having a variable magnetization direction and a voltage-controlled magnetic anisotropy effect, a reference layer having an invariable magnetization direction, a tunnel barrier layer disposed between the storage layer and the reference layer, and an underlayer disposed below the storage layer. The storage layer included in the magnetic memory element is configured to have a B content of 10 at % or less. The underlayer included in the magnetic memory element is configured to have an orientation different from that of the tunnel barrier layer or to be in an amorphous state.
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
There is provided a solid-state imaging device including a pixel array unit that includes a plurality of pixels each configured to generate charge by photoelectric conversion, in which the plurality of pixels include a plurality of event pixels each configured to generate an event signal on the basis of a luminance change of incident light, and a plurality of gradation pixels each configured to generate a luminance signal on the basis of a light amount of incident light. Each event pixel is associated with a white or cyan filter, and each gradation pixel is associated with a red, green, or blue color filter.
H04N 25/13 - Agencement de matrices de filtres colorés [CFA]Mosaïques de filtres caractérisées par les caractéristiques spectrales des éléments filtrants
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
Provided is an element device capable of improving reliability and simplifying substrate design. An element device according to the present technology comprises a laminate in which a first substrate and a second substrate including an element are laminated. The second substrate has at least one first terminal electrically connected to the first substrate on a surface opposite to the first substrate side, and has at least one second terminal electrically connected to the first substrate on a surface on the first substrate side. The element device according to the present technology is capable of improving reliability and simplifying substrate design.
A light-emitting device according to one embodiment of the present disclosure comprises: a light-emitting element in which a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type are sequentially stacked in a first direction; an ohmic contact layer in contact with a surface of the second semiconductor layer on the side opposite to the active layer; a first electrode provided so as to be electrically connectable to the first semiconductor layer; and a second electrode provided so as to be electrically connectable to the second semiconductor layer. The ohmic contact layer is provided at a position overlapping a part of the active layer in the first direction.
H10H 20/816 - Corps ayant des structures contrôlant le transport des charges, p. ex. couches semi-conductrices fortement dopées ou structures bloquant le courant
G09F 9/30 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels
G09F 9/33 - Dispositifs d'affichage d'information variable, dans lesquels l'information est formée sur un support, par sélection ou combinaison d'éléments individuels dans lesquels le ou les caractères désirés sont formés par une combinaison d'éléments individuels à semi-conducteurs, p. ex. à diodes
H10H 20/825 - Matériaux des régions électroluminescentes comprenant uniquement des matériaux du groupe III-V, p. ex. GaP contenant de l’azote, p. ex. GaN
The present disclosure relates to a light-receiving element and a distance-measuring device with which it is possible to calculate an accurate distance measurement value even in a pixel at the boundary portion of spot light. This light-receiving element comprises a pixel array unit having a pixel group composed of 4 pixels arranged 2 × 2, the pixel array unit receiving reflected light resulting from irradiation light reflected by a subject at light-receiving timings of which the phase is shifted by 0°, 90°, 180°, and 270° with respect to the irradiation timing of irradiation light emitted from a prescribed light source at a prescribed modulation frequency. The pixel array unit has a first inter-pixel separation unit for separating a semiconductor layer up to at least a portion in the depth direction of the semiconductor layer at a pixel boundary part between adjacent pixel groups, and either has a second inter-pixel separation unit of a different type from the first inter-pixel separation unit, or has neither the first inter-pixel separation unit nor the second inter-pixel separation unit, at a pixel boundary part between adjacent pixels within the pixel group. The present technology can be applied to, e.g., a distance-measuring device that measures the distance to a subject.
G01S 17/10 - Systèmes déterminant les données relatives à la position d'une cible pour mesurer la distance uniquement utilisant la transmission d'ondes à modulation d'impulsion interrompues
G01C 3/06 - Utilisation de moyens électriques pour obtenir une indication finale
G01S 7/4915 - Mesure du temps de retard, p. ex. détails opérationnels pour les composants de pixelsMesure de la phase
71.
DISPLAY DEVICE, ELECTRONIC APPARATUS, AND SEMICONDUCTOR DEVICE
[Problem] To make it possible to reduce latency when performing XR video display. [Solution] This display device comprises: a display unit that has a plurality of light-emitting element groups arranged in a first direction and a second direction intersecting each other; a trimming unit that cuts out a portion of input image data to generate trimmed image data; and an image processing unit that performs time warp processing for, on the basis of the position and/or the posture of a user viewing the display unit, transforming the trimmed image data to generate image data to be displayed on the display unit.
G09G 5/00 - Dispositions ou circuits de commande de l'affichage communs à l'affichage utilisant des tubes à rayons cathodiques et à l'affichage utilisant d'autres moyens de visualisation
G09G 5/37 - Détails concernant le traitement de dessins graphiques
H04N 5/64 - Détails de structure des récepteurs, p. ex. ébénisterie ou housses
72.
DISPLAY DEVICE, ELECTRONIC APPARATUS, AND SEMICONDUCTOR DEVICE
[Problem] To reduce latency when performing XR video display. [Solution] This display device comprises: a display unit having a plurality of light emitting element groups arranged in a first direction and a second direction intersecting each other; a time warp unit that performs time warp processing for deforming input image data and generating image data to be displayed on the display unit on the basis of at least one among a position and a posture of a user of the display unit; and a control unit that controls switching of at least one among write timing and light emission timing of the image data subjected to the time warp processing with respect to the display unit for each of the two or more light emitting element groups arranged in at least one among the first direction and the second direction.
G09G 5/00 - Dispositions ou circuits de commande de l'affichage communs à l'affichage utilisant des tubes à rayons cathodiques et à l'affichage utilisant d'autres moyens de visualisation
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
G09G 5/02 - Dispositions ou circuits de commande de l'affichage communs à l'affichage utilisant des tubes à rayons cathodiques et à l'affichage utilisant d'autres moyens de visualisation caractérisés par la manière dont la couleur est visualisée
G09G 5/37 - Détails concernant le traitement de dessins graphiques
G09G 5/373 - Détails concernant le traitement de dessins graphiques pour modifier la taille du dessin graphique
G09G 5/377 - Détails concernant le traitement de dessins graphiques pour mélanger ou superposer plusieurs dessins graphiques
H04N 5/64 - Détails de structure des récepteurs, p. ex. ébénisterie ou housses
The present invention reduces the size of an optical system for guiding incident light to an image sensor. This imaging device is provided with an optical system and an image sensor. In the imaging device, the optical system comprises a first lens. In the optical system, a first curved surface part of the first lens has a predetermined shape in which the planar shape of the first curved surface part is not circular when viewed from the optical axis direction. In addition, the outer periphery of the first lens when viewed from the optical axis direction is rectangular. In addition, the image sensor photoelectrically converts incident light from the optical system and generates image data. The first lens is provided with the first curved surface part and a flange part around the first curved surface part. The first curved surface part is provided with an aspherical surface part through which an effective light flux passes, and a connecting inclined part for connecting the aspherical surface part and the flange part.
G02B 7/02 - Montures, moyens de réglage ou raccords étanches à la lumière pour éléments optiques pour lentilles
G02B 1/04 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques faits de substances organiques, p. ex. plastiques
G02B 3/02 - Lentilles simples ou composées à surfaces non sphériques
G02B 13/00 - Objectifs optiques spécialement conçus pour les emplois spécifiés ci-dessous
Light-emitting devices that prevent delamination between an organic-containing layer and a first electrode are disclosed. In one example, a light-emitting device includes light-emitting elements each including a first electrode, an organic-containing layer including an organic light-emitting layer, and a second electrode. The light-emitting elements are arranged two-dimensionally, a protective layer is provided on each of the light-emitting elements and separated between the light-emitting elements adjacent to each other, and a side surface protective layer covers a side surface of each of the organic-containing layers, a side surface of each of the second electrodes, and a side surface of each of the protective layers. The side surface of the protective layer is located inside the side surface of the second electrode.
A light-emitting element includes an organic layer including a light-emitting layer, a transparent conductive layer, and a Ca layer disposed between the organic layer and the transparent conductive layer. The Ca layer contains Ca or CaO and a metal material, and the metal material contains at least one of Li, Cs, Rb, K, Ba, Sr, Na, Mg, Yb, a Li compound, a Cs compound, a Rb compound, a K compound, a Ba compound, a Sr compound, a Na compound, a Mg compound, and a Yb compound.
Provided is a display device that can improve luminous efficiency. The display device includes a plurality of light-emitting elements and a multilayer body covering the plurality of light-emitting elements. The multilayer body sequentially includes a first layer having a first refractive index n1, a second layer having a second refractive index n2 different from the first refractive index n1, and a third layer having a third refractive index n3 different from the second refractive index n2. The second layer includes a plurality of first lens portions and a plurality of second lens portions. The plurality of first lens portions and the plurality of second lens portions are provided on different surfaces of the second layer. The first lens portions are provided in one of the central portion and the peripheral portion of pixels, and the second lens portions are provided in the other of the central portion and the peripheral portion of the pixels.
The present technology relates to a semiconductor apparatus and a method for manufacturing a semiconductor apparatus that make it possible to provide a semiconductor apparatus that prevents, when semiconductor apparatuses are stacked on each other, reduction in the adhesion strength between the stacked semiconductor apparatuses.
The present technology relates to a semiconductor apparatus and a method for manufacturing a semiconductor apparatus that make it possible to provide a semiconductor apparatus that prevents, when semiconductor apparatuses are stacked on each other, reduction in the adhesion strength between the stacked semiconductor apparatuses.
The semiconductor apparatus includes a first electrode covered with a first insulating film, and a second electrode covered with the first insulating film and a second insulating film of a material different from that of the first insulating film. At least one surface of side surfaces of the second electrode is covered with the second insulating film, and a remaining surface is covered with the first insulating film. The present technology can be applied to a semiconductor apparatus that is subjected to an inspection to determine whether it is non-defective before it is stacked on other semiconductor apparatuses, in a case in which multiple semiconductor apparatuses are stacked on each other, for example.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
An emission direction of laser light is controlled with a simpler structure. A light emitting device includes: a laser light generation unit that causes laser light to resonate in a resonance area on a first surface and a second surface facing each other, and emits the laser light from the first surface; a substrate that is provided on the first surface of the laser light generation unit, and absorbs a part of the emitted laser light while transmitting the laser light; and a plurality of control electrodes that is provided on the second surface of the laser light generation unit, and faces each other with the resonance area interposed between the control electrodes.
H01S 5/062 - Dispositions pour commander les paramètres de sortie du laser, p. ex. en agissant sur le milieu actif en faisant varier le potentiel des électrodes
G01S 7/481 - Caractéristiques de structure, p. ex. agencements d'éléments optiques
H01S 5/183 - Lasers à émission de surface [lasers SE], p. ex. comportant à la fois des cavités horizontales et verticales comportant uniquement des cavités verticales, p. ex. lasers à émission de surface à cavité verticale [VCSEL]
79.
SIGNAL PROCESSING DEVICE, SIGNAL PROCESSING METHOD, AND SIGNAL PROCESSING SYSTEM
The present disclosure relates to a signal processing device, a signal processing method, and a signal processing system capable of preventing BMI control from running away.
The present disclosure relates to a signal processing device, a signal processing method, and a signal processing system capable of preventing BMI control from running away.
A determination unit determines whether or not to permit interaction of a user based on a neural signal corresponding to the intention of the user acquired from the brain of the user via a BMI. The present disclosure is applicable to a gateway device provided between the brain of a user and an external device or network service with which the user interacts in a system implemented using BMI technology.
Imaging devices, data processing methods, and recording media configured for enhanced information security of an imaging device equipped with a processing circuit that performs inference processing are disclosed. In one example, an image is captured, inference processing is performed using the captured image as input, and training processing of an inference model used in the inference processing is performed.
G06V 10/94 - Architectures logicielles ou matérielles spécialement adaptées à la compréhension d’images ou de vidéos
G06V 10/774 - Génération d'ensembles de motifs de formationTraitement des caractéristiques d’images ou de vidéos dans les espaces de caractéristiquesDispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant l’intégration et la réduction de données, p. ex. analyse en composantes principales [PCA] ou analyse en composantes indépendantes [ ICA] ou cartes auto-organisatrices [SOM]Séparation aveugle de source méthodes de Bootstrap, p. ex. "bagging” ou “boosting”
G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
H04N 23/80 - Chaînes de traitement de la caméraLeurs composants
An image including high-accuracy multi-wavelength information is acquired by a device that is compact and inexpensive.
An image including high-accuracy multi-wavelength information is acquired by a device that is compact and inexpensive.
A solid-state imaging device includes a sensor and a signal processing circuit. Light-receiving elements are included in a two-dimensional array along a first direction and a second direction intersecting the first direction, and a plurality of regions is arranged in which the regions are arranged along the first direction and respectively receives light beams having different wavelengths or light beams having different wavelengths are respectively incident on the regions. The signal processing circuit acquires an image in which information on an object moving along the second direction is corrected on the basis of signals acquired in the light-receiving elements to which each region of the plurality of regions belongs.
H04N 25/13 - Agencement de matrices de filtres colorés [CFA]Mosaïques de filtres caractérisées par les caractéristiques spectrales des éléments filtrants
H04N 23/12 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande pour générer des signaux d'image à partir de différentes longueurs d'onde avec un seul capteur
H04N 23/17 - Caméras ou modules de caméras comprenant des capteurs d'images électroniquesLeur commande pour générer des signaux d'image à partir de différentes longueurs d'onde n'utilisant que des moyens de balayage optico-mécanique
82.
STACKED PHOTON DETECTION DEVICE, STACKED PHOTON DETECTION SENSOR AND ACTIVE PHOTON SENSING SYSTEM
A stacked photon detection device, including: a first photodetection layer configured to detect photons in a first wavelength range; a second photodetection layer configured to detect photons in a second wavelength range; an interconnection layer arranged between the first and second photodetection layer which delimits an optical path from the first to the second photodetection layer for photons in the second wavelength range; and a plasmonic nano-antenna embedded in the first photodetection layer and configured to guide photons in the second wavelength range through the interconnection layer via the optical path.
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
83.
WAFER, METHOD FOR MANUFACTURING OPTICAL MEMBER, AND MOLD
In the present method for manufacturing an optical member, a large number of small-sized optical members is manufactured by performing molding once. A wafer according to the present invention is provided with a gate section, a sprue, an optical member array section, and a plurality of optical members. In the wafer, the gate section has a disk shape. Furthermore, in the wafer, the sprue extends from the center of the gate section along the central axis of the gate section. Moreover, in the wafer, the optical member array section is a member having a ring shape surrounding the gate section and having no runner. In addition, the plurality of optical members are arrayed in the optical member array section.
B29C 45/56 - Moyens pour plastifier ou homogénéiser la matière à mouler ou pour la forcer dans le moule utilisant des éléments de moules mobiles pendant ou après l'injection, p. ex. pour le moulage par injection-pressage
G02B 1/04 - Éléments optiques caractérisés par la substance dont ils sont faitsRevêtements optiques pour éléments optiques faits de substances organiques, p. ex. plastiques
Provided is a storage device comprising: a cell array unit that includes a plurality of memory cells arranged in a matrix; a reference unit that is provided within the cell array unit and that includes a first reference and a second reference; a sense amplifier that assesses the states of three of the memory cells by comparing the resistance values of the memory cells and the resistance value of the reference unit; and a switching unit that switches between connecting the first reference and the second reference as the reference unit to be connected to the sense amplifier.
G11C 7/14 - Gestion de cellules facticesGénérateurs de tension de référence de lecture
G11C 11/16 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments magnétiques utilisant des éléments dans lesquels l'effet d'emmagasinage est basé sur l'effet de spin
G11C 17/14 - Mémoires mortes programmables une seule foisMémoires semi-permanentes, p. ex. cartes d'information pouvant être replacées à la main dans lesquelles le contenu est déterminé en établissant, en rompant ou en modifiant sélectivement les liaisons de connexion par une modification définitive de l'état des éléments de couplage, p. ex. mémoires PROM
G11C 29/24 - Accès à des cellules additionnelles, p. ex. cellules factices ou cellules redondantes
85.
Imaging element, electronic apparatus, and method of driving imaging element
An imaging element according to an embodiment of the present disclosure includes a first photoelectric conversion section and a second photoelectric conversion section that are stacked in order from light incident side and that selectively detect and photoelectrically convert light beams of different wavelength bands, and the second photoelectric conversion section is disposed at an interval narrower than a pixel pitch of the first photoelectric conversion section.
A61B 1/04 - Instruments pour procéder à l'examen médical de l'intérieur des cavités ou des conduits du corps par inspection visuelle ou photographique, p. ex. endoscopesDispositions pour l'éclairage dans ces instruments combinés avec des dispositifs photographiques ou de télévision
H04N 25/17 - Séparation des couleurs sur la base de la profondeur d'absorption des photons, c.-à-d. que la résolution des couleurs est obtenue simultanément à chaque emplacement de pixel
H04N 25/46 - Extraction de données de pixels provenant d'un capteur d'images en agissant sur les circuits de balayage, p. ex. en modifiant le nombre de pixels ayant été échantillonnés ou à échantillonner en combinant ou en groupant les pixels
H04N 25/704 - Pixels spécialement adaptés à la mise au point, p. ex. des ensembles de pixels à différence de phase
H04N 25/76 - Capteurs adressés, p. ex. capteurs MOS ou CMOS
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
A light receiving element, an imaging element, and an imaging device that can prevent reflection of incident light over a wide wavelength range from visible light to infrared light are provided. A photoelectric conversion layer containing a compound semiconductor material or an organic material, a semiconductor layer arranged on a light incident surface side than the photoelectric conversion layer, containing a compound semiconductor material that prevents recombination of charges generated by photoelectric conversion by the photoelectric conversion layer, and having a film thickness thinner than the photoelectric conversion layer, a first insulating layer arranged on the light incident surface side than the semiconductor layer, containing silicon nitride, and having a lower refractive index than the semiconductor layer, and a second insulating layer arranged on the light incident surface side than the first insulating layer, containing silicon oxide, and having a lower refractive index than the first insulating layer are included.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
87.
INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD
Information processing with improved inferencing for machine learning is disclosed. In one example, a neural network is analyzed before inferencing is performed and generates control information for controlling compression and decoding of a feature amount processed by the neural network. Inferencing is performed using input data and the neural network and a processing result obtained by processing the feature amount is output as a computing result. The feature amount is compressed on the basis of the control information and recorded as a compressed feature amount. A decoder decodes the compressed feature amount temporarily recorded in the memory on the basis of the control information and outputs the decoded feature amount to the computing unit.
H04N 19/42 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques caractérisés par les détails de mise en œuvre ou le matériel spécialement adapté à la compression ou à la décompression vidéo, p. ex. la mise en œuvre de logiciels spécialisés
G06N 5/04 - Modèles d’inférence ou de raisonnement
H04N 19/13 - Codage entropique adaptatif, p. ex. codage adaptatif à longueur variable [CALV] ou codage arithmétique binaire adaptatif en fonction du contexte [CABAC]
H04N 19/132 - Échantillonnage, masquage ou troncature d’unités de codage, p. ex. ré-échantillonnage adaptatif, saut de trames, interpolation de trames ou masquage de coefficients haute fréquence de transformée
H04N 19/136 - Caractéristiques ou propriétés du signal vidéo entrant
H04N 19/61 - Procédés ou dispositions pour le codage, le décodage, la compression ou la décompression de signaux vidéo numériques utilisant un codage par transformée combiné avec un codage prédictif
Erroneous event detection caused by crosstalk is to be suppressed in a case where a pixel that detects an event and a pixel that outputs gradation information coexist. A photodetection element, which includes a plurality of pixel groups in which each of the plurality of pixel groups includes a first pixel and a first pixel circuit that output a pixel signal corresponding to a light amount of incident light, a second pixel that detects a change amount of the light amount of the incident light, and a second pixel circuit that compares the change amount detected by the second pixel with a bias signal to detect an event, includes a correction signal generation circuit that generates a correction signal for offsetting crosstalk in which the pixel signal affects the detection of the event, and a bias correction circuit that generates a bias correction signal obtained by correcting the bias signal on the basis of the correction signal, in which the second pixel circuit compares the change amount of the light amount of the incident light with the bias correction signal to detect the event.
H04N 25/47 - Capteurs d'images avec sortie d'adresse de pixelCapteurs d'images commandés par événementSélection des pixels à lire en fonction des données d'image
H04N 25/571 - Commande de la gamme dynamique impliquant une réponse non linéaire
H04N 25/633 - Traitement du bruit, p. ex. détection, correction, réduction ou élimination du bruit appliqué au courant d'obscurité en utilisant des pixels noirs optiques
H04N 25/707 - Pixels pour la détection d’événements
H04N 25/79 - Agencements de circuits répartis entre des substrats, des puces ou des cartes de circuits différents ou multiples, p. ex. des capteurs d'images empilés
In one example, a photodetector includes a first substrate, a light receiving element, a first contact layer, a second contact layer, a second substrate, a first through wiring, a second through wiring, and first shield electrodes. The first substrate includes pixels arranged in an array. The light receiving element includes a light receiving section and a multiplication section. The light receiving section and the multiplication section are provided in the first substrate. The first and second contact layers are respectively coupled to the light receiving section and the multiplication section. The second substrate is stacked at the first surface side of the first substrate and includes a semiconductor layer with transistors. The first and second through wirings are electrically coupled to the first and second contact layers. The first shield electrodes are provided at least partly in a region between the transistors and the first and second through wirings.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is made of ceramic, is thermally connected to a heat dissipation surface of the Peltier element, and accommodates the Peltier element and the sensor element.
H10N 10/10 - Dispositifs thermoélectriques comportant une jonction de matériaux différents, c.-à-d. dispositifs présentant l'effet Seebeck ou l'effet Peltier fonctionnant exclusivement par les effets Peltier ou Seebeck
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
91.
A DEPTH SENSING SYSTEM AND A METHOD OF MANUFACTURE
A depth system comprising an illuminator, a planar waveguide, an image sensor and a lens, wherein: the illuminator is configured to emit illuminator light to illuminate a scene when projected by the lens, the illuminator light being transferred to the lens through the planar waveguide; the image sensor is configured to receive illuminator light reflected from the scene and collected by the lens to determine a time of flight of the reflected light; and the lens, the planar waveguide and the image sensor are arranged along an optical path of the light reflected from the scene in that order.
A light detecting device includes a substrate and a first pixel region. The first pixel region includes a first photoelectric conversion region disposed in the substrate and to convert light into electric charge, a floating diffusion region, and a first transistor to transfer the electric charge from the first photoelectric conversion region to the floating diffusion region. The first transistor includes a first gate electrode disposed in the substrate and extending to a first depth within the substrate, and a second gate electrode disposed in the substrate and extending to a second depth within the substrate different than the first depth.
To facilitate connection between a gate electrode of a charge transfer section and wiring. The semiconductor apparatus includes a connection region, a photoelectric conversion section, a charge holding section, and a charge transfer section. The connection region is on the surface of the semiconductor substrate and to which wiring is connected. The photoelectric conversion section and the charge holding section are in the semiconductor substrate. The charge transfer section includes a MOS transistor including a gate electrode including a vertical electrode section disposed in the semiconductor substrate and a flat plate electrode section embedded in a surface of the semiconductor substrate and having a size in a plane direction of the semiconductor substrate different from that of the vertical electrode section and having wiring connected to an upper surface, and transfers a charge of the photoelectric conversion section to the charge holding section.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
H04N 25/77 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs
H10F 39/18 - Capteurs d’images à semi-conducteurs d’oxyde de métal complémentaire [CMOS]Capteurs d’images à matrice de photodiodes
94.
INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD
An information processing apparatus according to an embodiment includes: a processing unit configured to measure positions of a plurality of sites of a user based on positions of a plurality of measurement devices each attached to the user to acquire image data of the user and the image data acquired by each of the plurality of measurement devices. The position of each of the plurality of measurement devices is self-estimated by the measurement device or measured using another measurement device attached to the user.
A63F 13/212 - Dispositions d'entrée pour les dispositifs de jeu vidéo caractérisées par leurs capteurs, leurs finalités ou leurs types utilisant des capteurs portés par le joueur, p. ex. pour mesurer le rythme cardiaque ou l’activité des jambes
A63F 13/213 - Dispositions d'entrée pour les dispositifs de jeu vidéo caractérisées par leurs capteurs, leurs finalités ou leurs types comprenant des moyens de photo-détection, p. ex. des caméras, des photodiodes ou des cellules infrarouges
A63F 13/428 - Traitement des signaux de commande d’entrée des dispositifs de jeu vidéo, p. ex. les signaux générés par le joueur ou dérivés de l’environnement par mappage des signaux d’entrée en commandes de jeu, p. ex. mappage du déplacement d’un stylet sur un écran tactile en angle de braquage d’un véhicule virtuel incluant des signaux d’entrée de mouvement ou de position, p. ex. des signaux représentant la rotation de la manette d’entrée ou les mouvements des bras du joueur détectés par des accéléromètres ou des gyroscopes
G06F 3/01 - Dispositions d'entrée ou dispositions d'entrée et de sortie combinées pour l'interaction entre l'utilisateur et le calculateur
G06T 7/73 - Détermination de la position ou de l'orientation des objets ou des caméras utilisant des procédés basés sur les caractéristiques
95.
OPTICAL ELEMENT, ARITHMETIC METHOD, AND ELECTRONIC DEVICE
The present disclosure provides an optical element, an arithmetic method, and an electronic device capable of performing analog arithmetic operation using capacitance and enabling further reduction in size. According to the present disclosure, a photodetection element is provided, which includes: a pixel including a photoelectric conversion element that photoelectrically converts incident light; a readout circuit having a first capacitance capable of maintaining a potential according to a charge generated by the photoelectric conversion; and an arithmetic circuit capable of changing the number of times of readout of the potential of the first capacitance according to an arithmetic coefficient, in which the arithmetic circuit reads a reset potential of the first capacitance the number of times, and reads a photoelectric conversion potential of the first capacitance according to the charge generated by the photoelectric conversion the number of times.
G06E 1/00 - Dispositions pour traiter exclusivement des données numériques
H04N 25/771 - Circuits de pixels, p. ex. mémoires, convertisseurs A/N, amplificateurs de pixels, circuits communs ou composants communs comprenant des moyens de stockage autres que la diffusion flottante
H04N 25/78 - Circuits de lecture pour capteurs adressés, p. ex. amplificateurs de sortie ou convertisseurs A/N
A light-emitting device according to one embodiment of the present disclosure includes: a driving substrate; a compound semiconductor layer including a light-emitting region and having and a first surface facing the driving substrate and a second surface serving as a light-emitting surface on a side opposite to the first surface; and a separating part that separates at least a portion of the compound semiconductor layer from the second surface toward the first surface for each pixel, and has an inverted tapered shape in which an angle formed between a separation surface thereof and the first surface is an obtuse angle.
To suppress warpage of a wafer in a semiconductor package manufacturing process using an underfill. In a filling procedure, a portion along an outer periphery of each of a plurality of integrated circuits bonded to the wafer is filled with a photosensitive resin as a first underfill. In an exposure procedure, the first underfill is cured by exposure. In a sealing procedure, the plurality of integrated circuits and the first underfill are sealed by a sealing material. In a dicing procedure, the wafer is divided into a predetermined number of semiconductor chips.
For example, provided is a lighting device that irradiates an irradiation target with light with as few gaps as possible.
For example, provided is a lighting device that irradiates an irradiation target with light with as few gaps as possible.
The lighting device includes a light-emitting element including a plurality of light-emitting units arranged in an array, a first optical member arranged near the light-emitting element, the first optical member being arranged in an emission direction of light beams emitted from the light-emitting units to reduce a gap between the light beams emitted from the light-emitting units adjacent to each other and make the light beams uniform in light intensity, and a second optical member that roughly collimates divergent light from the first optical member.
[Problem] To provide a display device and an electronic apparatus, the display device making it possible to suppress luminance decrease and life shortening of a light-emitting element by high-duty driving in a surface batch light emission operation. [Solution] A display device according to the present disclosure comprises a pixel array in which a plurality of pixels are arranged in a two-dimensional array. The plurality of pixels include a drive transistor that drives a light-emitting element, and a first connection transistor that connects the drive transistor and the light-emitting element. Among the plurality of pixels, each of the pixels arranged in an n-th row (n is an integer of 1 or more) and each of the pixels arranged in an (n + 1)-th row are connected to each other via a second connection transistor in the same column.
G09G 3/3225 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice utilisant des sources lumineuses commandées utilisant des panneaux électroluminescents semi-conducteurs, p. ex. utilisant des diodes électroluminescentes [LED] organiques, p. ex. utilisant des diodes électroluminescentes organiques [OLED] utilisant une matrice active
G09G 3/20 - Dispositions ou circuits de commande présentant un intérêt uniquement pour l'affichage utilisant des moyens de visualisation autres que les tubes à rayons cathodiques pour la présentation d'un ensemble de plusieurs caractères, p. ex. d'une page, en composant l'ensemble par combinaison d'éléments individuels disposés en matrice
To suppress diffusion of impurities from a pixel boundary side to a photoelectric conversion unit, and improve a degree of freedom in electric field design of the photoelectric conversion unit. A photodetection device includes: a plurality of photoelectric conversion units provided for each pixel and disposed in a silicon layer; and a polysilicon layer and an insulating layer that are stacked in a depth direction of the plurality of photoelectric conversion units from a surface side opposite to a light incident surface of the plurality of photoelectric conversion units along a boundary region of the plurality of photoelectric conversion units, in which an interface between the polysilicon layer and the insulating layer has a convex shape in a direction of the light incident surface.
H10F 39/00 - Dispositifs intégrés, ou ensembles de plusieurs dispositifs, comprenant au moins un élément couvert par le groupe , p. ex. détecteurs de rayonnement comportant une matrice de photodiodes
