Abrégé

3.

Classes IPC  ?

• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
• C30B 15/00 - Croissance des monocristaux par tirage hors d'un bain fondu, p. ex. méthode de Czochralski
• C30B 21/06 - Solidification unidirectionnelle des matériaux eutectiques par tirage à partir d'un bain fondu
• C30B 27/02 - Croissance de monocristaux sous un fluide protecteur par tirage à partir d'un bain fondu
• C30B 28/10 - Production de matériaux polycristallins homogènes de structure déterminée à partir de liquides par tirage hors d'un bain fondu
• C30B 30/04 - Production de monocristaux ou de matériaux polycristallins homogènes de structure déterminée, caractérisée par l'action de champs électriques ou magnétiques, de l'énergie ondulatoire ou d'autres conditions physiques spécifiques en utilisant des champs magnétiques
• C30B 29/06 - Silicium
• C30B 15/20 - Commande ou régulation

Abrégé

A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.

Classes IPC  ?

• H05B 3/06 - Éléments chauffants combinés constructivement avec des éléments d'accouplement ou avec des supports

Abrégé

An upper side heater 10 is configured so that a current passage width becomes larger at a heater lower part than at a heater upper part. Thus, the upper side heater 10 has a current-carrying cross-sectional area which becomes larger at the heater lower part than at the heater upper part, a resistance value becomes accordingly smaller at the heater lower part than at the heater upper part, and a heat generation amount becomes relatively smaller at the heater lower part than at the heater upper part. Meanwhile, a lower side heater 20 is configured so that the current passage width becomes larger at the heater upper part than at the heater lower part. Thus, the current-carrying cross-sectional area of the lower side heater 20 becomes larger at the heater upper part than at the heater lower part, a resistance value becomes accordingly smaller at the heater upper part than at the heater lower part, and a heat generation amount becomes relatively smaller at the heater upper part than at the heater lower part.

Classes IPC  ?

• C30B 21/04 - Solidification unidirectionnelle des matériaux eutectiques par fusion de zone

Abrégé

b)) provided at a bottom of a chamber 1.

Classes IPC  ?

• C30B 15/20 - Commande ou régulation

Abrégé

The crucible and the side heater are held in the respective initial positions, and the raw material is put into the crucible. These initial positions are positions where the crucible side surface is mainly heated by the side heater. When the side heater heats the crucible side surface, the raw material is melted to form melt. When a part or all of the raw material is melted, the crucible is raised from the initial position or the side heater is lowered from the initial position. At this time, the position of the crucible or the side heater is adjusted such that the amount of heat applied to the lower side curved portion of the crucible side surface is greater than that in the initial relative position between the crucible and the side heater. And, if the crucible bottom part is heated by the side heater while the relative positions of the crucible and the side heater is maintained, the amount of heat applied to the crucible bottom part is increased as compared to the amount of heat applied to the crucible side surface, and the convection in the melt that makes the gas bubbles spatter to the outside. In this way, the gas bubbles are eliminated from the melt. As a result, the amount of gas bubbles in the melt can be reduced without deforming the crucible, and occurrence of pinhole defects in the wafer can be suppressed.

Classes IPC  ?

• C30B 15/14 - Chauffage du bain fondu ou du matériau cristallisé
• C30B 11/00 - Croissance des monocristaux par simple solidification ou dans un gradient de température, p. ex. méthode de Bridgman-Stockbarger
• C30B 29/06 - Silicium
• C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée