Abstract

3.

IPC Classes  ?

• C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
• C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
• C30B 21/06 - Unidirectional solidification of eutectic materials by pulling from a melt
• C30B 27/02 - Single-crystal growth under a protective fluid by pulling from a melt
• C30B 28/10 - Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
• C30B 29/06 - Silicon
• C30B 15/20 - Controlling or regulating

Abstract

A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.

IPC Classes  ?

• H05B 3/06 - Heater elements structurally combined with coupling elements or with holders

Abstract

An upper side heater 10 is configured so that a current passage width becomes larger at a heater lower part than at a heater upper part. Thus, the upper side heater 10 has a current-carrying cross-sectional area which becomes larger at the heater lower part than at the heater upper part, a resistance value becomes accordingly smaller at the heater lower part than at the heater upper part, and a heat generation amount becomes relatively smaller at the heater lower part than at the heater upper part. Meanwhile, a lower side heater 20 is configured so that the current passage width becomes larger at the heater upper part than at the heater lower part. Thus, the current-carrying cross-sectional area of the lower side heater 20 becomes larger at the heater upper part than at the heater lower part, a resistance value becomes accordingly smaller at the heater upper part than at the heater lower part, and a heat generation amount becomes relatively smaller at the heater upper part than at the heater lower part.

IPC Classes  ?

• C30B 21/04 - Unidirectional solidification of eutectic materials by zone-melting

Abstract

b)) provided at a bottom of a chamber 1.

IPC Classes  ?

• C30B 15/20 - Controlling or regulating

Abstract

The crucible and the side heater are held in the respective initial positions, and the raw material is put into the crucible. These initial positions are positions where the crucible side surface is mainly heated by the side heater. When the side heater heats the crucible side surface, the raw material is melted to form melt. When a part or all of the raw material is melted, the crucible is raised from the initial position or the side heater is lowered from the initial position. At this time, the position of the crucible or the side heater is adjusted such that the amount of heat applied to the lower side curved portion of the crucible side surface is greater than that in the initial relative position between the crucible and the side heater. And, if the crucible bottom part is heated by the side heater while the relative positions of the crucible and the side heater is maintained, the amount of heat applied to the crucible bottom part is increased as compared to the amount of heat applied to the crucible side surface, and the convection in the melt that makes the gas bubbles spatter to the outside. In this way, the gas bubbles are eliminated from the melt. As a result, the amount of gas bubbles in the melt can be reduced without deforming the crucible, and occurrence of pinhole defects in the wafer can be suppressed.

IPC Classes  ?

• C30B 15/14 - Heating of the melt or the crystallised materials
• C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
• C30B 29/06 - Silicon
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure