A memory device includes an array of storage cells. Each storage cell is coupled to one of multiple bitlines and one of multiple wordlines. A wordline decoder receives wordline address information and selectively activates an addressed wordline corresponding to the received wordline address information. The wordline decoder includes gating circuitry that is operative during a first mode of operation to selectively suppress activation of the addressed wordline during a refresh operation during a current refresh period based on a timing of an activate command associated with the addressed wordline.
A method of operating a memory controller is disclosed. The method includes transmitting data signals to a memory device over each one of at least two parallel data links. A timing signal is sent to the memory device on a first dedicated link. The timing signal has a fixed phase relationship with the data signals. A data strobe signal is driven to the memory device on a second dedicated link. Phase information is received from the memory device. The phase information being generated internal to the memory device and based on a comparison between the timing signal and a version of the data strobe signal internally distributed within the memory device. A phase of the data strobe signal is adjusted relative to the timing signal based on the received phase information.
G06F 1/04 - Génération ou distribution de signaux d'horloge ou de signaux dérivés directement de ceux-ci
G06F 13/42 - Protocole de transfert pour bus, p. ex. liaisonSynchronisation
G11C 7/04 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les effets perturbateurs thermiques
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
H04L 7/00 - Dispositions pour synchroniser le récepteur avec l'émetteur
An interposer interconnecting a first integrated circuit and a second integrated circuit includes active circuitry. The “active” interposer converts high-speed signals into lower-speed, but more parallelized, signals for transmission across the active interposer. The parallelized signals may be buffered or amplified at intervals while crossing the active interposer. The high-speed to low-speed, and back, conversions may be performed by an appropriately configured and controlled multiplexer/demultiplexer circuitry The supply voltages for some interposer circuits may be different than the supply voltages for the interfaces with the first and second integrated circuit. One or more of the interconnected integrated circuits may supply, and/or calibrate the supply voltages for the interposer circuitry. Timing signals provided by one or more of the interconnected integrated circuits may also be calibrated using circuitry on the active interposer.
G11C 11/4074 - Circuits d'alimentation ou de génération de tension, p. ex. générateurs de tension de polarisation, générateurs de tension de substrat, alimentation de secours, circuits de commande d'alimentation
A memory controller includes logic circuitry to generate a first data address identifying a location in a first external memory array for storing first data, a first tag address identifying a location in a second external memory array for storing a first tag, a second data address identifying a location in the second external memory array for storing second data, and a second tag address identifying a location in the first external memory array for storing a second tag. The memory controller includes an interface that transfers the first data address and the first tag address for a first set of memory operations in the first and the second external memory arrays. The interface transfers the second data address and the second tag address for a second set of memory operations in the first and the second external memory arrays.
G06F 12/0895 - Mémoires cache caractérisées par leur organisation ou leur structure de parties de mémoires cache, p. ex. répertoire ou matrice d’étiquettes
G06F 12/0802 - Adressage d’un niveau de mémoire dans lequel l’accès aux données ou aux blocs de données désirés nécessite des moyens d’adressage associatif, p. ex. mémoires cache
G06F 12/0846 - Mémoire cache avec matrices multiples d’étiquettes ou de données accessibles simultanément
G06F 12/1027 - Traduction d'adresses utilisant des moyens de traduction d’adresse associatifs ou pseudo-associatifs, p. ex. un répertoire de pages actives [TLB]
System and method for improved transferring of data involving memory device systems. A memory appliance (MA) comprising a plurality of memory modules is configured to store data within the plurality of memory modules and further configured to receive data commands from the first server and a second server coupled to the MA. The data commands may include direction memory access commands such that the MA can service the data commands while bypassing a host controller of the MA.
A memory system selectively compresses and/or decompresses pages of a memory array based on requests from a host device. Upon performing compression, the memory buffer device returns compression context metadata to the host device for storing in the page table of the host device to enable the host device to subsequently obtain data from the compressed page. The host device may subsequently send a request for the memory buffer device to perform decompression to a free page in the memory array for accessing by the host device, or the host device may directly access the compressed page for local decompression and storage.
A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.
G11C 7/04 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les effets perturbateurs thermiques
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
H04L 7/033 - Commande de vitesse ou de phase au moyen des signaux de code reçus, les signaux ne contenant aucune information de synchronisation particulière en utilisant les transitions du signal reçu pour commander la phase de moyens générateurs du signal de synchronisation, p. ex. en utilisant une boucle verrouillée en phase
8.
MEMORY COMPONENT WITH ADJUSTABLE CORE-TO-INTERFACE DATA RATE RATIO
A memory component includes a memory bank comprising a plurality of storage cells and a data interface block configured to transfer data between the memory component and a component external to the memory component. The memory component further includes a plurality of column interface buses coupled between the memory bank and the data interface block, wherein a first column interface bus of the plurality of column interface buses is configured to transfer data between a first storage cell of the plurality of storage cells and the data interface block during a first access operation and wherein a second column interface bus of the plurality of column interface buses is configured to transfer the data between the first storage cell and the data interface block during a second access operation.
The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.
G11C 29/50 - Test marginal, p. ex. test de vitesse, de tension ou de courant
G01R 23/02 - Dispositions pour procéder à la mesure de fréquences, p. ex. taux de répétition d'impulsionsDispositions pour procéder à la mesure de la période d'un courant ou d'une tension
G01R 23/15 - Indication de ce qu'une fréquence d'impulsions est, soit supérieure ou inférieure à une valeur prédéterminée, soit à l'intérieur ou à l'extérieur d'une plage de valeurs prédéterminée, en utilisant des éléments non linéaires ou numériques
G01R 35/00 - Test ou étalonnage des appareils couverts par les autres groupes de la présente sous-classe
G06F 1/08 - Générateurs d'horloge ayant une fréquence de base modifiable ou programmable
G06F 1/12 - Synchronisation des différents signaux d'horloge
G06F 11/16 - Détection ou correction d'erreur dans une donnée par redondance dans le matériel
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G11C 7/04 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les effets perturbateurs thermiques
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 8/18 - Circuits de synchronisation ou d'horlogeGénération ou gestion de signaux de commande d'adresse, p. ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
H03L 1/02 - Stabilisation du signal de sortie du générateur contre les variations de valeurs physiques, p. ex. de l'alimentation en énergie contre les variations de température uniquement
10.
REDUCED LATENCY METADATA ENCRYPTION AND DECRYPTION
Techniques for providing reduced latency metadata encryption and decryption are described herein. A memory buffer device having a cryptographic circuit to receive a first data and a first metadata associated with the first data. The cryptographic circuit can encrypt or decrypt the first metadata using a first cryptographic algorithm. The cryptographic circuit can encrypt or decrypt the first data using a second cryptographic algorithm. The first data and the first metadata can be stored at a same location, within a memory device, corresponding to a memory address.
H04L 9/06 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p. ex. système DES
A memory device includes functionality (e.g., mode, command, etc.) to concurrently activate/access a plurality of rows across a corresponding plurality of memory banks. When concurrently accessing the memory banks, the row address and column address are provided to all of the memory banks being accessed. Multiplexer/demultiplexer (e.g., steering logic) may be used to route non-payload (e.g., metadata) from the concurrently activated memory banks to/from the data interface of the memory device. The steering logic may route and/or serialize the metadata from the concurrently activated memory banks of the bank group such that the non-payload data from a respective memory bank is communicated via the same data signal(s) (e.g., DQ[0], DQ[1], etc.) of the data interface.
A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; and a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal. A third register field may store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal.
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 5/02 - Disposition d'éléments d'emmagasinage, p. ex. sous la forme d'une matrice
G11C 5/04 - Supports pour éléments d'emmagasinageMontage ou fixation d'éléments d'emmagasinage sur de tels supports
G11C 5/06 - Dispositions pour interconnecter électriquement des éléments d'emmagasinage
G11C 7/18 - Organisation de lignes de bitsDisposition de lignes de bits
G11C 11/4063 - Circuits auxiliaires, p. ex. pour l'adressage, le décodage, la commande, l'écriture, la lecture ou la synchronisation
G11C 11/4097 - Organisation de lignes de bits, p. ex. configuration de lignes de bits, lignes de bits repliées
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
A method of operation of a flash integrated circuit (IC) memory device is described. The flash IC memory device has an array of memory cells and an interface to receive control, address and data signals using an internal reference voltage. The method includes, at boot-up, initializing the internal reference voltage to a default voltage. At boot-up, the interface is operable to receive, using the internal reference voltage, signals having a first voltage swing at a first signaling frequency. The method includes receiving a first command that specifies calibration of the interface during a calibration mode. The calibration mode is used to calibrate the interface to operate at a second signaling frequency and receive signals having a second voltage swing. The second voltage swing is smaller than the first voltage swing and the second signaling frequency is higher than the first signaling frequency.
A control component implements pipelined data processing operations in either of two timing domains bridged by a domain-crossing circuit according to one or more configuration signals that indicate relative clock frequencies of the two domain and/or otherwise indicate which of the two timing domains will complete the data processing operations with lowest latency.
A multi-domain masked AND gate includes inner-domain calculations, re-sharing, register stage, cross-domain calculations, and compression. The inner-domain multiplication and the re-sharing are calculated prior to storing the re-shared variables in the register stage. Thus, the inputs to the cross-domain multiplication and the compression are performed on variables that have been refreshed by additional randomness. This AND gate does not need statistically independent inputs, is secure in the probing model even in the presence of glitches, also known as the robust probing model. A two-domain input and two domain output AND gate can be implemented using six (6) registers, four (4) two input logical AND gates, and eight (8) exclusive-OR (XOR) gates. The AND gate may also be used to implement an AES S-box that has two (2) register stages and takes two (2) clock cycles per computation.
G06F 21/75 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information par inhibition de l’analyse de circuit ou du fonctionnement, p. ex. pour empêcher l'ingénierie inverse
G06F 9/30 - Dispositions pour exécuter des instructions machines, p. ex. décodage d'instructions
Multiple helper data solutions (a.k.a., helper data images) are generated to produce preselected non-random values (a.k.a., “target values”) from a physically unclonable function (PUF) circuit. Therefore, multiple preselected PUF output values may be generated for a given integrated circuit die, where each the output values are derived from a combination of the chip-unique PUF circuit and the chip-unique helper data solution. These helper data blocks are stored in a nonvolatile memory on the integrated circuit die. In an embodiment, the preselected non-random values may be used as secret encryption or decryption keys. In this manner, multiple secret values can be reliably stored within a chip, using a combination of the chip-unique PUF circuit and the multiple chip-unique helper data solution.
H04L 9/32 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
G06F 21/72 - Protection de composants spécifiques internes ou périphériques, où la protection d'un composant mène à la protection de tout le calculateur pour assurer la sécurité du calcul ou du traitement de l’information dans les circuits de cryptographie
17.
MASKING WITH EFFICIENT UNMASKING VIA DOMAIN EMBEDDING IN CRYPTOGRAPHIC DEVICES AND APPLICATIONS
Disclosed aspects and implementations are directed to systems and techniques for protecting cryptographic operations against side-channel attacks. In one example, polynomials associated with secret data and public data defined on a working domain having a first dimension are mapped to an auxiliary domain having a larger second dimension. The mapped polynomials are masked using masking polynomials associated with a kernel of a homomorphism transformation from the auxiliary domain to the working domain. One or more computations are then performed on the masked polynomials in the auxiliary domain and an output is transformed from the auxiliary domain to the working domain.
H04L 9/30 - Clé publique, c.-à-d. l'algorithme de chiffrement étant impossible à inverser par ordinateur et les clés de chiffrement des utilisateurs n'exigeant pas le secret
H04L 9/00 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité
18.
USING DYNAMIC BURSTS TO SUPPORT FREQUENCY-AGILE MEMORY INTERFACES
The disclosed embodiments relate to a system that supports dynamic bursts to facilitate frequency-agile communication between a memory controller and a memory device. During operation, the system monitors a reference clock signal received at an interface between the memory device and the memory controller. Upon detecting a frequency change in the reference clock signal from a fullrate to a subrate, the interface operates in a burst mode, wherein data is communicated through bursts separated by intervening low-power intervals during which portions of the interface are powered down.
G06F 1/3237 - Économie d’énergie caractérisée par l'action entreprise par désactivation de la génération ou de la distribution du signal d’horloge
G06F 1/324 - Économie d’énergie caractérisée par l'action entreprise par réduction de la fréquence d’horloge
G06F 1/3287 - Économie d’énergie caractérisée par l'action entreprise par la mise hors tension d’une unité fonctionnelle individuelle dans un ordinateur
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G06F 13/28 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus d'entrée/sortie utilisant le transfert par rafale, p. ex. acces direct à la mémoire, vol de cycle
19.
PROTECTION OF NEURAL NETWORKS BY OBFUSCATION OF NEURAL NETWORK ARCHITECTURE
Aspects of the present disclosure involve implementations that may be used to protect neural network models against adversarial attacks by obfuscating neural network operations and architecture. Obfuscation techniques include obfuscating weights and biases of neural network nodes, obfuscating activation functions used by neural networks, as well as obfuscating neural network architecture by introducing dummy operations, dummy nodes, and dummy layers into the neural networks.
A system and method for performing a low overhead refresh management of a memory device. The method includes receiving, by a controller from a dynamic random access memory (DRAM) device via a feedback interface, a signal indicative of an occurrence of a row hammer event. The method includes determining, by the controller based on the signal, whether to schedule a refresh event. The method includes sending, by the controller responsive to determining whether to schedule the refresh event, a first command to the DRAM device to execute a refresh operation.
An interconnected stack of one or more Dynamic Random Access Memory (DRAM) die also has one or more custom logic, controller, or processor die. The custom die(s) of the stack include direct channel interfaces that allow direct access to memory regions on one or more DRAMs in the stack. The direct channels are time-division multiplexed such that each DRAM die is associated with a time slot on a direct channel. The custom die configures a first DRAM die to read a block of data and transmit it via the direct channel using a time slot that is assigned to a second DRAM die. The custom die also configures the second memory device to receive the first block of data in its assigned time slot and write the block of data.
Row addresses received by a module are mapped before being received by the memory devices of the module such that row hammer affects different neighboring row addresses in each memory device. Thus, because the mapped respective, externally received, row addresses applied to each device ensure that each set of neighboring rows for a given row address received by the module is different for each memory device on the module, row hammering of a given externally addressed row spreads the row hammering errors across different externally addressed rows on each memory device. This has the effect of confining the row hammer errors for each row that is hammered to a single memory device per externally addressed neighboring row. By confining the row hammer errors to a single memory device, the row hammer errors are correctible using a SDDC scheme.
G06F 12/06 - Adressage d'un bloc physique de transfert, p. ex. par adresse de base, adressage de modules, extension de l'espace d'adresse, spécialisation de mémoire
The embodiments described herein describe technologies for non-volatile memory persistence in a multi-tiered memory system including two or more memory technologies for volatile memory and non-volatile memory.
G06F 11/14 - Détection ou correction d'erreur dans les données par redondance dans les opérations, p. ex. en utilisant différentes séquences d'opérations aboutissant au même résultat
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G11C 7/20 - Circuits d'initialisation de cellules de mémoire, p. ex. à la mise sous ou hors tension, effacement de mémoire, mémoire d'image latente
G11C 14/00 - Mémoires numériques caractérisées par des dispositions de cellules ayant des propriétés de mémoire volatile et non volatile pour sauvegarder l'information en cas de défaillance de l'alimentation
24.
INTERFACE CIRCUIT FOR CONVERTING A SERIAL DATA STREAM TO A PARALLEL DATA SCHEME WITH DATA STROBE PREAMBLE INFORMATION IN THE SERIAL DATA STREAM
Technologies for converting serial data stream to a parallel data and strobe scheme with data strobe preamble information in the serial data stream are described. A device includes an interface circuit that receives a serial data stream and converts the serial data stream to parallel data and a data strobe (DQS) signal associated with the parallel data using N-bit header fields inserted into the serial data stream. The N-bit header fields specify DQS preamble information for the parallel data.
Disclosed is a dynamic random access memory that has columns, data rows, tag rows and comparators. Each comparator compares address bits and tag information bits from the tag rows to determine a cache hit and generate address bits to access data information in the DRAM as a multiway set associative cache.
G06F 12/0864 - Adressage d’un niveau de mémoire dans lequel l’accès aux données ou aux blocs de données désirés nécessite des moyens d’adressage associatif, p. ex. mémoires cache utilisant des moyens pseudo-associatifs, p. ex. associatifs d’ensemble ou de hachage
Disclosed herein are techniques for implementing high-throughput low-latency hybrid memory modules with improved data backup and restore throughput, enhanced non-volatile memory controller (NVC) resource access, and enhanced mode register setting programmability. Embodiments comprise a command replicator to generate sequences of one or more DRAM read and/or write and/or other commands to be executed in response to certain local commands from a non-volatile memory controller (NVC) during data backup and data restore operations. Other embodiments comprise an access engine to enable an NVC in a host control mode to trigger entry into a special mode and issue commands to access a protected register space. Some embodiments comprise a mode register controller to capture and store the data comprising mode register setting commands issued during a host control mode, such that an NVC can program the DRAM mode registers in an NVC control mode.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 11/00 - Détection d'erreursCorrection d'erreursContrôle de fonctionnement
G06F 11/14 - Détection ou correction d'erreur dans les données par redondance dans les opérations, p. ex. en utilisant différentes séquences d'opérations aboutissant au même résultat
G06F 12/0802 - Adressage d’un niveau de mémoire dans lequel l’accès aux données ou aux blocs de données désirés nécessite des moyens d’adressage associatif, p. ex. mémoires cache
G06F 12/14 - Protection contre l'utilisation non autorisée de mémoire
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G11C 5/04 - Supports pour éléments d'emmagasinageMontage ou fixation d'éléments d'emmagasinage sur de tels supports
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 11/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants
G11C 14/00 - Mémoires numériques caractérisées par des dispositions de cellules ayant des propriétés de mémoire volatile et non volatile pour sauvegarder l'information en cas de défaillance de l'alimentation
27.
INTERFACE FOR MEMORY READOUT FROM A MEMORY COMPONENT IN THE EVENT OF FAULT
Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory component is disclosed that includes a memory core, a primary interface, and a secondary interface. The primary interface includes data input/output (I/O) circuitry and control/address (C/A) input circuitry, and accesses the memory core during a normal mode of operation. The secondary interface accesses the memory core during a fault mode of operation.
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G06F 11/07 - Réaction à l'apparition d'un défaut, p. ex. tolérance de certains défauts
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
G06F 11/16 - Détection ou correction d'erreur dans une donnée par redondance dans le matériel
G06F 11/20 - Détection ou correction d'erreur dans une donnée par redondance dans le matériel en utilisant un masquage actif du défaut, p. ex. en déconnectant les éléments défaillants ou en insérant des éléments de rechange
An application executing at a first platform receives, from a tester device, a first request to generate a secure data asset. Responsive to authenticating the client, the application sends, to a second platform, a second request to determine whether the client has access to the secure data asset. Responsive to receiving an indication, from the second platform, that the client has access to the secure data asset, the application performs one or more operations to generate the secure data asset. The application sends, to the tester device, the generated secure data asset.
An integrated circuit (IC) memory device includes an array of storage cells configured into multiple regions. Monitoring circuitry is coupled to each of the multiple regions to detect and generate per-region operating parameter information. Refresh circuitry generates per-region refresh information for the multiple regions based on the per-region operating parameter information.
A system receives, from a first provisioning entity, a request for first secure device data related to a semiconductor device. The first secure device data is associated with one or more provisioning operations performed, on the semiconductor device, by a second provisioning entity. Based on determining that the first provisioning entity has permission to access the first secure device data, the first secure device data is provided to the first provisioning entity. Second secure device data associated with one or more provisioning operations performed by the first provisioning entity on the semiconductor device is received from the first provisioning entity.
Technologies for storing burst error information in a buffer structure and signaling to prevent overflow and over-writing the buffer structure are described. One controller device includes error detection logic, a buffer, and buffer control logic. The error detection logic detects an error in a read operation associated with a memory device coupled to the controller device. The buffer stores error information associated with the error. The buffer control logic generates and outputs a first signal responsive to the buffer being full.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
G06F 11/14 - Détection ou correction d'erreur dans les données par redondance dans les opérations, p. ex. en utilisant différentes séquences d'opérations aboutissant au même résultat
A first-in-first-out (FIFO) storage structure within an integrated-circuit component is loaded with qualification values corresponding to respective pairs of edges expected within a timing strobe signal transmitted to the integrated-circuit component. The qualification values are sequentially output from the FIFO storage structure during respective cycles of the timing strobe signal and a gate signal is either asserted or deasserted during the respective cycles of the timing strobe signal according to the qualification values output from the FIFO storage structure.
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.
G11C 29/44 - Indication ou identification d'erreurs, p. ex. pour la réparation
G11C 5/04 - Supports pour éléments d'emmagasinageMontage ou fixation d'éléments d'emmagasinage sur de tels supports
G11C 11/401 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules nécessitant un rafraîchissement ou une régénération de la charge, c.-à-d. cellules dynamiques
G11C 29/00 - Vérification du fonctionnement correct des mémoiresTest de mémoires lors d'opération en mode de veille ou hors-ligne
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
G11C 29/52 - Protection du contenu des mémoiresDétection d'erreurs dans le contenu des mémoires
34.
PROTECTION OF NEURAL NETWORKS BY OBFUSCATION OF ACTIVATION FUNCTIONS
Aspects of the present disclosure involve implementations that may be used to protect neural network models against adversarial attacks by obfuscating neural network operations and architecture. Obfuscation techniques include obfuscating weights and biases of neural network nodes, obfuscating activation functions used by neural networks, as well as obfuscating neural network architecture by introducing dummy operations, dummy nodes, and dummy layers into the neural networks.
G06V 10/82 - Dispositions pour la reconnaissance ou la compréhension d’images ou de vidéos utilisant la reconnaissance de formes ou l’apprentissage automatique utilisant les réseaux neuronaux
35.
PROTECTION OF HOMOMORPHIC ENCRYPTION COMPUTATIONS BY MASKING WITHOUT UNMASKING
Aspects and implementations are directed to systems and techniques for protecting cryptographic operations against side-channel attacks by masking a ciphertext data using one or more masks randomly sampled from a null space associated with a tensor representation of a secret data and generating a plaintext data using the masked ciphertext data.
H04L 9/00 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité
H04L 9/06 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p. ex. système DES
A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
37.
RECONFIGURABLE PROCESSING UNITS FOR EFFICIENT SUPPORT OF MULTIPLE POST-QUANTUM CRYPTOGRAPHIC ALGORITHMS
Disclosed aspects and implementations are directed to devices and techniques for performing cryptographic operations using post-quantum algorithms. Reconfigurable processing devices supports multiple algorithms that deploy various integer and polynomial arithmetic operations including Number Theoretic Transforms, inverse Number Theoretic Transforms, pointwise polynomial multiplications, pairwise polynomial multiplications, pointwise-pairwise polynomial multiplications, Karatsuba multiplications, and/or other operations. The reconfigurable processing device(s) may be integrated into a streaming pipeline that includes a hash value generator and a sampler with matching throughputs for efficient utilization of computational and memory resources.
38.
Memory component with programmable data-to-clock ratio
In a memory component having a command/address interface, timing interface and data interface, the command/address interface receives a first command/address value from a control component during a first interval and a second command/address value from the control component during a second interval. The timing interface receives a data strobe from the control component during the first interval and a data clock from the control component during the second interval, the data strobe departing from a parked voltage level to commence toggling at a time corresponding to reception of the first command/address value, and the data clock toggling throughout the second interval regardless of second command/address value reception-time. The data interface samples first write data corresponding to the first command/address value at times indicated by toggling of the data strobe, and samples second write data corresponding to the second command/address value at times indicated by toggling of the data clock.
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.
G11C 11/4093 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. mémoires tampon de données
G11C 5/02 - Disposition d'éléments d'emmagasinage, p. ex. sous la forme d'une matrice
G11C 5/04 - Supports pour éléments d'emmagasinageMontage ou fixation d'éléments d'emmagasinage sur de tels supports
G11C 11/406 - Organisation ou commande des cycles de rafraîchissement ou de régénération de la charge
G11C 11/4096 - Circuits de commande ou de gestion d'entrée/sortie [E/S, I/O] de données, p. ex. circuits pour la lecture ou l'écriture, circuits d'attaque d'entrée/sortie ou commutateurs de lignes de bits
H01L 23/00 - Détails de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide
H01L 23/48 - Dispositions pour conduire le courant électrique vers le ou hors du corps à l'état solide pendant son fonctionnement, p. ex. fils de connexion ou bornes
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
H01L 25/10 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs ayant des conteneurs séparés
H01L 25/18 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant de types prévus dans plusieurs différents groupes principaux de la même sous-classe , , , , ou
The timing of the synchronous interface is controlled by a clock signal driven by a controller. The clock is toggled in order to send a command to a memory device via the interface. If there are no additional commands to be sent via the interface, the controller suspends the clock signal. When the memory device is ready, the memory device drives a signal back to the controller. The timing of this signal is not dependent upon the clock signal. Receipt of this signal by the controller indicates that the memory device is ready and the clock signal should be resumed so that a status of the command can be returned via the interface, or another command issued via the interface.
A memory controller component of a memory system stores memory access requests within a transaction queue until serviced so that, over time, the transaction queue alternates between occupied and empty states. The memory controller transitions the memory system to a low power mode in response to detecting the transaction queue is has remained in the empty state for a predetermined time. In the transition to the low power mode, the memory controller disables oscillation of one or more timing signals required to time data signaling operations within synchronous communication circuits of one or more attached memory devices and also disables one or more power consuming circuits within the synchronous communication circuits of the one or more memory devices.
G06F 1/3237 - Économie d’énergie caractérisée par l'action entreprise par désactivation de la génération ou de la distribution du signal d’horloge
G06F 1/12 - Synchronisation des différents signaux d'horloge
G06F 1/3225 - Surveillance de dispositifs périphériques de mémoires
G06F 1/324 - Économie d’énergie caractérisée par l'action entreprise par réduction de la fréquence d’horloge
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 9/38 - Exécution simultanée d'instructions, p. ex. pipeline ou lecture en mémoire
G06F 12/0855 - Accès de mémoire cache en chevauchement, p. ex. pipeline
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G06F 13/36 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus ou au système à bus communs
G11C 7/04 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les effets perturbateurs thermiques
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 11/4096 - Circuits de commande ou de gestion d'entrée/sortie [E/S, I/O] de données, p. ex. circuits pour la lecture ou l'écriture, circuits d'attaque d'entrée/sortie ou commutateurs de lignes de bits
42.
LOCAL INTERNAL DISCOVERY AND CONFIGURATION OF INDIVIDUALLY SELECTED AND JOINTLY SELECTED DEVICES
A memory controller interfaces with one or more memory devices having configurable width data buses and configurable connectivity between data pins of the memory devices and data pins of the memory controller. Upon initialization of the memory devices, the memory controller automatically discovers the connectivity configuration of the one or more memory devices, including both individually selected and jointly selected devices. After discovering connectivity of the connected devices, the memory controller configures the memory devices according to the discovered connectivity and assigns unique addresses to jointly selected devices.
G06F 12/06 - Adressage d'un bloc physique de transfert, p. ex. par adresse de base, adressage de modules, extension de l'espace d'adresse, spécialisation de mémoire
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/20 - Circuits d'initialisation de cellules de mémoire, p. ex. à la mise sous ou hors tension, effacement de mémoire, mémoire d'image latente
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
An integrated circuit memory device is disclosed. The memory device includes an array of storage cells configured into multiple banks. Each bank includes multiple segments. Register storage stores per-segment values representing per-segment refresh parameters. Refresh logic refreshes each segment in accordance with the corresponding per-segment value.
A compute system includes an execution unit (e.g. of a CPU) with a memory controller providing access to a hybrid physical memory. The physical memory is “hybrid” in that it combines a cache of relatively fast, durable, and expensive memory (e.g. DRAM) with a larger amount of relatively slow, wear-sensitive, and inexpensive memory (e.g. flash). A hybrid controller component services memory commands from the memory controller component and additionally manages cache fetch and evict operations that keep the cache populated with instructions and data that have a high degree of locality of reference. The memory controller alerts the hybrid controller of available access slots to the cache so that the hybrid controller can use the available access slots for cache fetch and evict operations with minimal interference to the memory controller.
A DRAM device may be configured to retransmit or not retransmit zero or more of command/address signals, write data signals, read data signals, and/or data strobe signals. The DRAM device may have separate, unidirectional read data signal and write data signal interfaces. Combined activate and read or write commands may be implemented. The configuration of the DRAM to retransmit or not retransmit signals may be determined by the DRAM device's physical location on a module via hardwired configuration pins. The various configurations allows a DRAM device to be used on both a long and narrow form factor module and a DIMM module.
G11C 11/4096 - Circuits de commande ou de gestion d'entrée/sortie [E/S, I/O] de données, p. ex. circuits pour la lecture ou l'écriture, circuits d'attaque d'entrée/sortie ou commutateurs de lignes de bits
An integrated circuit device is disclosed including core circuitry and interface circuitry. The core circuitry outputs in parallel a set of data bits, while the interface circuitry couples to the core circuitry. The interface circuitry receives in parallel a first number of data bits among the set of data bits from the core circuitry and outputs in parallel a second number of data bits. The ratio of the first number to the second number is a non-power-of-2 value.
A dynamic random access memory (DRAM) device includes functions configured to aid with operating the DRAM device as part of data caching functions. The DRAM is configured to respond to at least two types of commands. A first type of command (cache data access command) seeks to access a cache line of data, if present in the DRAM cache. A second type of command (cache probe command) seeks to determine whether a cache line of data is present, but is not requesting the data be returned in response. In response to these types of access commands, the DRAM device is configured to receive cache tag query values and to compare stored cache tag values with the cache tag query values. A hit/miss (HM) interface/bus may indicate the result of the cache tag compare and stored cache line status bits to a controller.
G06F 12/0895 - Mémoires cache caractérisées par leur organisation ou leur structure de parties de mémoires cache, p. ex. répertoire ou matrice d’étiquettes
G06F 12/084 - Systèmes de mémoire cache multi-utilisateurs, multiprocesseurs ou multitraitement avec mémoire cache partagée
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
48.
MEMORY MODULE WITH DOUBLE DATA RATE COMMAND AND DATA INTERFACES SUPPORTING TWO-CHANNEL AND FOUR-CHANNEL MODES
A memory module supports multiple memory channel modes, each including a double-date-rate (DDR) data channel supported by an independent command-and-address (CA) channel. In a two-channel mode, the memory module supports two DDR data channels using two respective DDR CA channels. Each CA channel includes a corresponding set of CA links. In a four-channel mode, the memory module supports two pairs of DDR data channels, each pair supported by a pair of independent CA channels. Memory commands issued in the four-channel mode are time interleaved to share one of the sets of CA links.
Control logic within a memory control component outputs first and second memory read commands to a memory module at respective times, the memory module having memory components disposed thereon. Interface circuitry within the memory control component receives first read data concurrently from a first plurality of the memory components via a first plurality of data paths, respectively, in response to the first memory read command, and receives second read data concurrently from a second plurality of the memory components via a second plurality of data paths, respectively, in response to the second memory read command, the first plurality of the memory components including at least one memory component not included in the second plurality of the memory components and vice-versa.
G11C 16/06 - Circuits auxiliaires, p. ex. pour l'écriture dans la mémoire
G11C 7/04 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les effets perturbateurs thermiques
G11C 13/00 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage non couverts par les groupes , ou
G11C 16/26 - Circuits de détection ou de lectureCircuits de sortie de données
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
A memory controller integrated circuit includes a clock signal generator circuit configured to generate a plurality of strobe signals. The memory controller integrated circuit further includes a memory interface circuit coupled to the clock signal generator circuit, the memory interface circuit configured to transmit the plurality of strobe signals to a memory module, wherein each of the plurality of strobe signals is offset with respect to an adjacent strobe signal, and transmit a plurality of data signals to the memory module, wherein a first subset of the plurality of data signals comprises a first nibble and is phase aligned with a first strobe signal of the plurality of strobe signals, and wherein a second subset of the plurality of data signals comprises a second nibble and is phase aligned with a second strobe signal of the plurality of strobe signals.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
A stacked memory device comprises a stack of dies including respective core memories. An interface die in the stack includes interface circuitry for interfacing between a data bus coupled to a memory controller and the respective core memories of the stack of dies. The interface circuitry may implement decoding of data received from the data bus for the respective core memories and encoding of data sent to the data bus from the respective core memories. The respective core memories of the stacked memory device may be arranged in two or more ranks. A memory module includes a set of stacked memory devices. The stacked memory devices may be arranged in various configurations having varying numbers of channels, ranks, and data widths.
A power-management integrated circuit (PMIC) is installed on a memory module to optimize power use among a collection of memory devices. The PMIC includes external power-supply nodes that receive relatively high and low supply voltages. Depending on availability, the PMIC uses one or both of these supply voltages to generate a managed supply voltage for powering the memory devices. The PMIC selects between operational modes for improved efficiency in dependence upon the availability of one or both externally provided supply voltages.
G11C 11/4074 - Circuits d'alimentation ou de génération de tension, p. ex. générateurs de tension de polarisation, générateurs de tension de substrat, alimentation de secours, circuits de commande d'alimentation
53.
FUNCTIONS WITH A PRE-CHARGE OPERATION AND AN EVALUATION OPERATION
An input data may be received. A portion of a cryptographic operation may be performed with the received input data at a first function component. During the performance of the cryptographic operation at the first function component, a pre-charge operation may be performed at a second function component. Furthermore, the second function component may be used to perform another portion of the cryptographic operation with a result of the portion of the cryptographic operation performed at the first function component.
H04L 9/06 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p. ex. système DES
H04L 9/00 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité
54.
CONCURRENT FORWARD ERROR CORRECTION (FEC) AND CYCLIC REDUNDANCY CHECK (CRC)
A device includes a receiver coupled with a link and including control logic, the control logic to receive data bits corresponding to a first set of data. The control logic may also perform a forward error correction (FEC) operation on the data bits to generate an error location responsive to receiving the data bits. The control logic may also perform a cyclic redundancy check (CRC) operation on the data bits to generate a first CRC value, wherein the CRC operation and FEC operation are performed concurrently. The control logic may determine a second CRC value after performing the FEC operation, the second CRC value based on the error location and generate a third CRC value corresponding to the first set of data responsive to performing the CRC operation and determining the second CRC value.
A memory system includes a memory controller in communication with a memory device via a communication links and a memory interface that can be retrained without interrupting memory access. In a normal operating mode, the entire interface is available to the controller in service of access (read and write) requests. When retraining is required, the memory controller commands the memory device to enter a training mode that divides the interface functionally into two parts that operate concurrently, one that is retrained and another that services normal access requests. The training mode offers a reduced data rate, relative to the normal mode, but also reduced latency relative to interrupting data traffic altogether for training.
Space in a memory is allocated based on the highest used precision. When the maximum used precision is not being used, the bits required for that particular precision level (e.g., floating point format) are transferred between the processor and the memory while the rest are not. A given floating point number is distributed over non-contiguous addresses. Each portion of the given floating point number is located at the same offset within the access units, groups, and/or memory arrays. This allows a sequencer in the memory device to successively access a precision dependent number of access units, groups, and/or memory arrays without receiving additional requests over the memory channel.
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G06F 7/483 - Calculs avec des nombres représentés par une combinaison non linéaire de nombres codés, p. ex. nombres rationnels, système de numération logarithmique ou nombres à virgule flottante
57.
LOW LATENCY METADATA DECRYPTION USING HASH AND PSEUDORANDOM FUNCTIONS
Systems and techniques for cryptographically protecting data in a computer memory are disclosed. The techniques include dividing the data into a first portion and a second portion, encrypting the first portion of the data to create a first stored form of the data, encrypting the second portion of the data, and storing, in the computer memory, the first stored form of the data and a second stored form of the data. The techniques include, to encrypt the second portion, calculating a hash based on the first stored form of the data, applying a first pseudorandom function to the hash to obtain a bit sequence, and combining the bit sequence with the second portion of the data to obtain the second stored form of the data.
H04L 9/06 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p. ex. système DES
A random access memory device includes memory cells in each row for storing metadata related to accesses to that row. These metadata dedicated memory cells may store counter values that may be updated (e.g., incremented or decremented) when certain events occur (e.g., activate row—ACT, column read—CAS, error detected, etc.). Which events cause an update of the metadata stored in a row, and under what conditions related to the metadata/count value (e.g., threshold, match, threshold value, etc.) cause further action to be taken (e.g., alert controller, set mode register, etc.) are configurable by a controller. Additional functions related to the metadata/counters are also configurable such as scanning counter values to determine the row address with highest or lowest value and pattern matching (e.g., process identification match/mismatch).
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
59.
MULTI-LANE CRYPTOGRAPHIC ENGINES WITH SYSTOLIC ARCHITECTURE AND OPERATIONS THEREOF
Aspects of the present disclosure involve a cryptographic processor that includes a systolic array having a plurality of processing lanes (PLs), each PL including a systolic sub-array of two or more processing elements (PEs), each PE being configured to multiply two numbers to obtain and store a multiplication product. The cryptographic processor is configured to efficiently perform a variety of operations, including multiplication of large numbers, modular reduction, Montgomery reduction, and the like.
G06F 7/544 - Méthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs n'établissant pas de contact, p. ex. tube, dispositif à l'état solideMéthodes ou dispositions pour effectuer des calculs en utilisant exclusivement une représentation numérique codée, p. ex. en utilisant une représentation binaire, ternaire, décimale utilisant des dispositifs non spécifiés pour l'évaluation de fonctions par calcul
G06F 5/06 - Procédés ou dispositions pour la conversion de données, sans modification de l'ordre ou du contenu des données maniées pour modifier la vitesse de débit des données, c.-à-d. régularisation de la vitesse
G06F 7/72 - Méthodes ou dispositions pour effectuer des calculs en utilisant une représentation numérique non codée, c.-à-d. une représentation de nombres sans baseDispositifs de calcul utilisant une combinaison de représentations de nombres codées et non codées utilisant l'arithmétique des résidus
An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.
H03K 5/13 - Dispositions ayant une sortie unique et transformant les signaux d'entrée en impulsions délivrées à des intervalles de temps désirés
G06F 13/00 - Interconnexion ou transfert d'information ou d'autres signaux entre mémoires, dispositifs d'entrée/sortie ou unités de traitement
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G06F 13/42 - Protocole de transfert pour bus, p. ex. liaisonSynchronisation
G11C 7/04 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les effets perturbateurs thermiques
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
A sense amplifier for a memory device includes a primary latch and a holding latch that are independently controllable. The primary latch comprises a first set of transistors and the holding latch includes a second set of transistors having higher threshold voltages than the first set of transistors. In conjunction with a memory access operation, the primary latch and the holding latch sense and amplify a differential voltage of a pair of bitlines. A connectivity control circuit controls connectivity of the primary latch in different operational modes including pre-charge, offset pre-compensation, and amplification. In an active idle mode in between memory access operations while the wordline may remain active, the connectivity control circuit may turn off the primary latch while the holding latch holds the differential voltage on the bitlines to avoid leakage current through the primary latch.
G11C 11/4091 - Amplificateurs de lecture ou de lecture/rafraîchissement, ou circuits de lecture associés, p. ex. pour la précharge, la compensation ou l'isolation des lignes de bits couplées
G11C 7/06 - Amplificateurs de lectureCircuits associés
Multiple (e.g., four) memory devices on a module are connected to a common pair of differential data strobe signal conductors. The common pair of differential data strobe conductors are also coupled to a memory controller to time the transmission of data to the multiple memory devices and to time the reception of data from the memory devices. The controller calibrates two or more different data transmission delays relative to its transmission of a write data strobe signal on the common pair of differential data strobe conductors. The controller also calibrates to account for two or more different data reception delays (skew) relative to its reception of a read data strobe signal on the common pair of differential data strobe conductors.
A memory device includes an array of storage cells. Each storage cell is coupled to one of multiple bitlines and one of multiple wordlines. Reference cell circuitry includes reference cells, with each reference cell being coupled to a separate one of the multiple bitlines. For a given storage cell activated during a read operation by a given wordline and bitline, a corresponding reference cell is coupled to the given bitline and cooperates with the given storage cell to form a voltage divider circuit having a sense node. Sense amplifier circuitry, during the read operation, senses a stored state of the given storage cell based on a voltage developed by the voltage divider circuit at the sense node.
H10B 12/00 - Mémoires dynamiques à accès aléatoire [DRAM]
G11C 7/06 - Amplificateurs de lectureCircuits associés
G11C 7/14 - Gestion de cellules facticesGénérateurs de tension de référence de lecture
G11C 11/401 - Mémoires numériques caractérisées par l'utilisation d'éléments d'emmagasinage électriques ou magnétiques particuliersÉléments d'emmagasinage correspondants utilisant des éléments électriques utilisant des dispositifs à semi-conducteurs utilisant des transistors formant des cellules nécessitant un rafraîchissement ou une régénération de la charge, c.-à-d. cellules dynamiques
64.
PROVISIONING A VOLATILE SECURITY CONTEXT IN A ROOT OF TRUST
A first device receives, from a second device, a request to provision a security context for the second device. The first device transmits a nonce value to the second device and receives, from the second device, a data structure encoding the security context and a cryptographically signed digest of a combination of the data structure, the nonce value, and a public key. The first device determines a first digest using the nonce value and cryptographically signed digest, and a second digest using the data structure, the nonce value, and the public key. Responsive to determining that the first digest matches the second digest, the first device provisions the security context for the second device by storing the security context on the volatile memory.
H04L 9/32 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
A memory system in which a timing drift that would occur in distribution of a first timing signal for data transport in a memory device is determined by measuring the actual phase delays occurring in a second timing signal that has a frequency lower than that of the first timing signal and is distributed in one or more circuits mimicking the drift characteristics of at least a portion of distribution of the first timing signal. The actual phase delays are determined in the memory device and provided to a memory controller so that the phases of the timing signals used for data transport may be adjusted based on the determined timing drift.
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
H03L 7/07 - Commande automatique de fréquence ou de phaseSynchronisation utilisant un signal de référence qui est appliqué à une boucle verrouillée en fréquence ou en phase utilisant plusieurs boucles, p. ex. pour la génération d'un signal d'horloge redondant
H03L 7/081 - Détails de la boucle verrouillée en phase avec un déphaseur commandé additionnel
H03L 7/099 - Détails de la boucle verrouillée en phase concernant principalement l'oscillateur commandé de la boucle
H04L 7/00 - Dispositions pour synchroniser le récepteur avec l'émetteur
H04L 7/10 - Dispositions pour synchronisation initiale
Memory devices and a memory controller that controls such memory devices. Multiple memory devices receive commands and addresses on a command/address (C/A) bus that is relayed point-to-point by each memory device. Data is received and sent from these devices to/from a memory controller in a point-to-point configuration by adjusting the width of each individual data bus coupled between the individual memory devices and the memory controller. Along with the C/A bus are clock signals that are regenerated by each memory device and relayed. The memory controller and memory devices may be packaged on a single substrate using package-on-package technology. Using package-on-package technology allows the relayed C/A signals to connect from memory device to memory device using wire bonding. Wirebond connections provide a short, high-performance signaling environment for the chip-to-chip relaying of the C/A signals and clocks from one memory device to the next in the daisy-chain.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 12/06 - Adressage d'un bloc physique de transfert, p. ex. par adresse de base, adressage de modules, extension de l'espace d'adresse, spécialisation de mémoire
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
Disclosed systems and techniques include a cryptographic processor for processing of both unprotected data and protected data using an unprotected data path. In one implementation, the cryptographic processor includes a processing unit, and a control unit to selectively cause the processing unit to operate in a public mode or a secure mode. In the public mode, the processing unit performs a computational operation to compute a nonlinear function of a public data. In the secure mode, the processing unit computes, over a plurality of iterations, a plurality of shares of the nonlinear function of a secure data. At each iteration, the processing unit performs multiple instances of the computational operation to compute a respective share of the nonlinear function of the secure data.
H04L 9/06 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité l'appareil de chiffrement utilisant des registres à décalage ou des mémoires pour le codage par blocs, p. ex. système DES
A memory component and a controller communicate commands and data with each other The commands to activate and then access data, and the data itself, are all communicated between a controller and the memory component at different times. The controller and memory component each calculate a respective error detecting code (EDC) values on the activate command information (e.g., bank address and row address) and store them indexed by the bank address. When the memory component is accessed, retrieved EDC values are combined with EDC values calculated from the access command information, and the data itself. The memory component transmits its combined EDC value to the controller for checking.
G11C 29/42 - Dispositifs de vérification de réponse utilisant des codes correcteurs d'erreurs [ECC] ou un contrôle de parité
G11C 8/18 - Circuits de synchronisation ou d'horlogeGénération ou gestion de signaux de commande d'adresse, p. ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
G11C 29/18 - Dispositifs pour la génération d'adressesDispositifs pour l'accès aux mémoires, p. ex. détails de circuits d'adressage
G11C 29/44 - Indication ou identification d'erreurs, p. ex. pour la réparation
69.
ENERGY EFFICIENT STORAGE OF ERROR-CORRECTION-DETECTION INFORMATION
Data and error correction information may involve accessing multiple data channels (e.g., 8) and one error detection and correction channel concurrently. This technique requires a total of N+1 row requests for each access, where N is the number of data channels (e.g., 8 data row accesses and 1 error detection and correction row access equals 9 row accesses.) A single (or at least less than N) data channel row may be accessed concurrently with a single error detection and correction row. This reduces the number of row requests to two (2)—one for the data and one for the error detection and correction information. Because, row requests consume power, reducing the number of row requests is more power efficient.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
70.
Multi-Modal Refresh of Dynamic, Random-Access Memory
A memory system includes two or more memory controllers capable of accessing the same dynamic, random-access memory (DRAM), one controller having access to the DRAM or a subset of the DRAM at a time. Different subsets of the DRAM are supported with different refresh-control circuitry, including respective refresh-address counters. Whichever controller has access to a given subset of the DRAM issues refresh requests to the corresponding refresh-address counter. Counters are synchronized before control of a given subset of the DRAM is transferred between controllers to avoid a loss of stored data.
A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.
G11C 5/02 - Disposition d'éléments d'emmagasinage, p. ex. sous la forme d'une matrice
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 8/18 - Circuits de synchronisation ou d'horlogeGénération ou gestion de signaux de commande d'adresse, p. ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
G11C 11/4093 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. mémoires tampon de données
G11C 11/4096 - Circuits de commande ou de gestion d'entrée/sortie [E/S, I/O] de données, p. ex. circuits pour la lecture ou l'écriture, circuits d'attaque d'entrée/sortie ou commutateurs de lignes de bits
A memory module includes one or more memory devices and a memory interface chip coupled to the one or more memory devices via one or more communication links. The memory module further includes a persistent memory storing one or more sets of training and calibration settings corresponding to communication over the one or more communication links, where the one or more sets of training and calibration settings are stored in the persistent memory before operation of the memory module and used to configure one or more components of the memory interface chip during the operation of the memory module.
A value corresponding to a physical variation of a device may be received. Furthermore, helper data associated with the physical variation of the device may be received. A result data may be generated based on a combination of the value corresponding to the physical variation of the device and the helper data. An error correction operation may be performed on the result data to identify one or more code words associated with the error correction operation. Subsequently, a target data may be generated based on the one or more code words.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
H04L 9/32 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
74.
Memory system using asymmetric source-synchronous clocking
The disclosed embodiments relate to a memory system that generates a multiplied timing signal from a reference timing signal. During operation, the system receives a reference timing signal. Next, the system produces a multiplied timing signal from the reference timing signal by generating a burst comprising multiple timing events for each timing event in the reference timing signal, wherein consecutive timing events in each burst of timing events are separated by a bit time. Then, as the reference clock frequency changes, the interval between bursts of timing events changes while the bit time remains substantially constant.
G06F 1/12 - Synchronisation des différents signaux d'horloge
G06F 1/04 - Génération ou distribution de signaux d'horloge ou de signaux dérivés directement de ceux-ci
G06F 1/08 - Générateurs d'horloge ayant une fréquence de base modifiable ou programmable
G11C 7/02 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les signaux parasites
G11C 7/04 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les effets perturbateurs thermiques
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G06F 1/06 - Générateurs d'horloge produisant plusieurs signaux d'horloge
A serial presence detect (SPD) device includes nonvolatile memory to store SPD information. Parity information suitable for single error correct and double error detect (SEC-DED) is also stored in association with the SPD information in the nonvolatile memory. The combination of SPD information and parity information is organized into codewords addressable at each memory location. During an initialization period occurring after a power on reset and before the SPD device is accepting I2C commands, the SPD device checks each memory location (codeword) for errors. Each error detected is counted to provide an indicator of device health. Before the initialization period expires, the SPD device writes a corrected codeword back to the nonvolatile memory.
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
G06F 11/07 - Réaction à l'apparition d'un défaut, p. ex. tolérance de certains défauts
G06F 11/16 - Détection ou correction d'erreur dans une donnée par redondance dans le matériel
Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.
G06F 1/324 - Économie d’énergie caractérisée par l'action entreprise par réduction de la fréquence d’horloge
G06F 1/3234 - Économie d’énergie caractérisée par l'action entreprise
G06F 1/3287 - Économie d’énergie caractérisée par l'action entreprise par la mise hors tension d’une unité fonctionnelle individuelle dans un ordinateur
G06F 5/06 - Procédés ou dispositions pour la conversion de données, sans modification de l'ordre ou du contenu des données maniées pour modifier la vitesse de débit des données, c.-à-d. régularisation de la vitesse
G11C 7/04 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les effets perturbateurs thermiques
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
Memory devices, modules, controllers, systems and associated methods are disclosed. In one embodiment, a dynamic random access memory (DRAM) device is disclosed. The DRAM device includes memory core circuitry including an array of DRAM storage cells organized into bank groups. Each bank group includes multiple banks, where each of the multiple banks includes addressable columns of DRAM storage cells. The DRAM device includes signal interface circuitry having dedicated write data path circuitry and dedicated read data path circuitry. Selector circuitry, for a first memory transaction, selectively couples at least one of the addressable columns of DRAM storage cells to the dedicated read data path circuitry or the dedicated write data path circuitry.
Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory controller is disclosed. The IC memory controller includes a first controller command/address (C/A) interface to transmit first and second read commands for first and second read data to a first memory C/A interface of a first bank group of memory. A second command/address (C/A) interface transmits third and fourth read commands for third and fourth read data to a second memory C/A interface of a second bank group of memory. Receiver circuitry receives the first and second read data via a first data link interface and the third and fourth read data via the second data link interface. For a first operating mode, the first and second read data are received after respective first delays following transmission of the first and second read commands and at a first serialization ratio. For a second operating mode, the first and second read data are received after respective second and third delays following transmission of the first and second read commands. The second and third delays are different from the first delays and from each other. The first and second data are received at a second serialization ratio that is different than the first serialization ratio.
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 8/18 - Circuits de synchronisation ou d'horlogeGénération ou gestion de signaux de commande d'adresse, p. ex. pour des signaux d'échantillonnage d'adresse de ligne [RAS] ou d'échantillonnage d'adresse de colonne [CAS]
A memory controller includes a request queue and associated logic for efficiently managing the request queue based on various timing constraints of the memory device. A single request queue for the memory device stores read and write requests spanning different banks of the memory device. In each memory controller cycle, selection logic may select both a row request and a column request (relating to a different bank than the row request) for issuing to the memory device based on a set of timing status bits. Following issuance of requests, the memory controller updates the queue to maintain the queued requests in a time-ordered, compressed sequence. The memory controller furthermore updates the timing status bits that are used by the selection logic to select requests from the queue based on a history of past memory requests.
A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.
Described are memory modules that support different error detection and correction (EDC) schemes in both single-and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.
G11C 11/4093 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. mémoires tampon de données
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
G11C 7/02 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les signaux parasites
G11C 11/4096 - Circuits de commande ou de gestion d'entrée/sortie [E/S, I/O] de données, p. ex. circuits pour la lecture ou l'écriture, circuits d'attaque d'entrée/sortie ou commutateurs de lignes de bits
G11C 29/04 - Détection ou localisation d'éléments d'emmagasinage défectueux
G11C 29/52 - Protection du contenu des mémoiresDétection d'erreurs dans le contenu des mémoires
During system initialization, each data buffer device and/or memory device on a memory module is configured with a unique (at least to the module) device identification number. In order to access a single device (rather than multiple buffers and/or memory devices), a target identification number is written to all of the devices using a command bus connected to all of the data buffer devices or memory devices, respectively. The devices whose respective device identification numbers do not match the target identification number are configured to ignore future command bus transactions (at least until the debug mode is turned off.) The selected device that is configured with a device identification number matching the target identification number is configured to respond to command bus transactions.
G06F 11/07 - Réaction à l'apparition d'un défaut, p. ex. tolérance de certains défauts
G06F 13/00 - Interconnexion ou transfert d'information ou d'autres signaux entre mémoires, dispositifs d'entrée/sortie ou unités de traitement
G11C 5/04 - Supports pour éléments d'emmagasinageMontage ou fixation d'éléments d'emmagasinage sur de tels supports
G11C 7/20 - Circuits d'initialisation de cellules de mémoire, p. ex. à la mise sous ou hors tension, effacement de mémoire, mémoire d'image latente
G11C 8/12 - Circuits de sélection de groupe, p. ex. pour la sélection d'un bloc de mémoire, la sélection d'une puce, la sélection d'un réseau de cellules
A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G06F 13/372 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus ou au système à bus communs avec commande d'accès décentralisée utilisant une priorité dépendant du temps, p. ex. des compteurs de temps individuellement chargés ou des tranches de temps
84.
Methods and Circuits for Streaming Data to Processing Elements in Stacked Processor-Plus-Memory Architecture
A stacked processor-plus-memory device includes a processing die with an array of processing elements of an artificial neural network. Each processing element multiplies a first operand—e.g. a weight—by a second operand to produce a partial result to a subsequent processing element. To prepare for these computations, a sequencer loads the weights into the processing elements as a sequence of operands that step through the processing elements, each operand stored in the corresponding processing element. The operands can be sequenced directly from memory to the processing elements or can be stored first in cache. The processing elements include streaming logic that disregards interruptions in the stream of operands.
G06F 15/80 - Architectures de calculateurs universels à programmes enregistrés comprenant un ensemble d'unités de traitement à commande commune, p. ex. plusieurs processeurs de données à instruction unique
A system includes a memory controller and a memory device having a command interface, refresh circuitry, control logic, and a plurality of memory banks, each with a plurality of rows of memory cells. The command interface is operable to receive a refresh command from a memory controller and the refresh circuitry is configured to perform one or more refresh operations to refresh data stored in at least one bank of the plurality of memory banks during a refresh time interval in response to the refresh command from the memory controller. The control logic is to configure the command interface to enter a calibration mode during the refresh time interval, and the command interface is configured to perform a calibration operation in the calibration mode during the refresh time interval.
G06Q 20/00 - Architectures, schémas ou protocoles de paiement
G11C 7/02 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les signaux parasites
G11C 11/406 - Organisation ou commande des cycles de rafraîchissement ou de régénération de la charge
A system limits the use (e.g., number of encryptions and/or decryptions using that key value) of cryptographic key values. When a key value's usage count exceeds the limit, that value is "retired", and a new key value is selected. Key identifiers and a key versions are associated with each encrypted data block. The key identifiers are also associated with current key values, a current version indicators, and usage indicators. Key identifiers may also be associated with one or more previous (i.e., 'retired') version indicators and corresponding previous key values. When an encrypted data block associated with a given key identifier is accessed, the key version indicator associated with that block, and the key version indicators associated with the current and previous keys, are used to select the proper key from either the current key value or one of the previous key values.
Technologies for providing write protection to an integrated circuit memory device are described. The integrated circuit memory device has an input port to receive write data and command data and a read data output port to send read data. A device includes a write protection mechanism to prevent write data from being written to a memory core. The write protection mechanism can mask the write data or abort a write operation in response to activation. The write protection mechanism can be activated in response to an error detected by a serial data buffer (SDB) device coupled to the integrated circuit memory device.
A dynamic random access memory (DRAM) device includes functions configured to aid with operating the DRAM device as part of data caching functions. In response to some write and/or read access commands, the DRAM device is configured to copy a cache line (e.g., dirty cache line) from the main DRAM memory array, place it in a flush buffer, and replace the copied cache line in the main DRAM memory array with a new (e.g., different) cache line of data. In response to conditions and/or events (e.g., explicit command, refresh, write-to-read command sequence, unused data bus bandwidth, full flush buffer, etc.) the DRAM device transmits the cache line from the flush buffer to the controller. The controller may then transmit the cache line to other cache levels.
G06F 12/0804 - Adressage d’un niveau de mémoire dans lequel l’accès aux données ou aux blocs de données désirés nécessite des moyens d’adressage associatif, p. ex. mémoires cache avec mise à jour de la mémoire principale
89.
DETERMINING A PHYSICALLY UNCLONABLE FUNCTION (PUF) SELECTION VECTOR
Technologies for generating an M-bit selection vector for a selector circuit that receives as input M binary values from a set of entropy-generation elements and outputs N binary values responsive to the M-bit selection vector are described. N bits in the M-bit selection vector are set to a first logic state, and M-N bits of the M-bit selection vector are set to a second logic state. A determination of which N bits in the M-bit selection vector are set to the first logic state is determined by a process. The process includes determining an accumulated Hamming weight value for M bit positions of the M-bit selection vector using K samples and identifying N bit positions in the M-bit selection vector using the accumulated Hamming weight values. The process sets the N bits corresponding to the N bit positions in the M-bit selection vector to the first logic state.
H04L 9/32 - Dispositions pour les communications secrètes ou protégéesProtocoles réseaux de sécurité comprenant des moyens pour vérifier l'identité ou l'autorisation d'un utilisateur du système
A memory system includes a memory controller, a plurality of serial data buffers, and a plurality of memory devices. The memory controller includes rank configuration logic for composing ranks of memory devices and corresponding serial communication lanes. In different configurations, the ranks may be of varying sizes to accommodate different data widths and/or different levels of striping across memory devices. The memory controller may dynamically change the rank configuration by re-assigning the serial communication lanes to different memory ranks.
Power consumption in a three-dimensional stack of integrated-circuit memory dies is reduced through selective enabling/disabling of physical signaling interfaces in those dies in response to early transmission of chip identifier information relative to command execution.
An integrated circuit (IC) memory device includes an array of storage cells configured into multiple banks. Interface circuitry receives refresh commands from a host memory controller to refresh the multiple banks for a first refresh mode. On-die refresh control circuitry selectively generates local refresh commands to refresh the multiple banks in cooperation with the host memory controller during a designated hidden refresh interval in a second refresh mode. Mode register circuitry stores a value indicating whether the on-die refresh control circuitry is enabled for use during the second refresh mode. The interface circuitry includes backchannel control circuitry to transmit a corrective action control signal during operation in the second refresh mode.
Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation
G06F 11/10 - Détection ou correction d'erreur par introduction de redondance dans la représentation des données, p. ex. en utilisant des codes de contrôle en ajoutant des chiffres binaires ou des symboles particuliers aux données exprimées suivant un code, p. ex. contrôle de parité, exclusion des 9 ou des 11
G06F 11/07 - Réaction à l'apparition d'un défaut, p. ex. tolérance de certains défauts
G06F 11/16 - Détection ou correction d'erreur dans une donnée par redondance dans le matériel
H03M 13/09 - Détection d'erreurs uniquement, p. ex. utilisant des codes de contrôle à redondance cyclique [CRC] ou un seul bit de parité
94.
Multi-Element Memory Device with Power for Individual Elements
A multi-element device includes a plurality of memory elements, each of which includes a memory array, access circuitry to control access to the memory array, and power control circuitry. The power control circuitry, which includes one or more control registers for storing first and second control values, controls distribution of power to the access circuitry in accordance with the first control value, and controls distribution of power to the memory array in accordance with the second control value. Each memory element also includes sideband circuitry for enabling a host system to set at least the first control value and the second control value in the one or more control registers.
G06F 1/28 - Surveillance, p. ex. détection des pannes d'alimentation par franchissement de seuils
G06F 1/3234 - Économie d’énergie caractérisée par l'action entreprise
G06F 1/3287 - Économie d’énergie caractérisée par l'action entreprise par la mise hors tension d’une unité fonctionnelle individuelle dans un ordinateur
G06F 13/42 - Protocole de transfert pour bus, p. ex. liaisonSynchronisation
G11C 5/06 - Dispositions pour interconnecter électriquement des éléments d'emmagasinage
Aspects and implementations include systems and techniques for efficient detection and correction of errors in stored and communicated data. On encoding, data is partitioned into multiple portions of data symbols and corresponding codewords having one or more error correction (EC) symbols are generated. A mixing transformation is then applied to obtain mixed codewords. On decoding, an unmixing transformation is applied to the mixed codewords before one or more EC codes are applied to identify locations of error(s) in the plurality of codewords. Responsive to determining whether a number of the locations of error(s) is above a threshold number, an EC decoder determines if decoding has been successful or declares an uncorrectable decoding error.
H03M 13/15 - Codes cycliques, c.-à-d. décalages cycliques de mots de code produisant d'autres mots de code, p. ex. codes définis par un générateur polynomial, codes de Bose-Chaudhuri-Hocquenghen [BCH]
H03M 13/37 - Méthodes ou techniques de décodage non spécifiques à un type particulier de codage prévu dans les groupes
H03M 13/00 - Codage, décodage ou conversion de code pour détecter ou corriger des erreursHypothèses de base sur la théorie du codageLimites de codageMéthodes d'évaluation de la probabilité d'erreurModèles de canauxSimulation ou test des codes
96.
Memory component with input/output data rate alignment
First data is read out of a core storage array of a memory component over a first time interval constrained by data output bandwidth of the core storage array. After read out from the core storage array, the first data is output from the memory component over a second time interval that is shorter than the first time interval and that corresponds to a data transfer bandwidth greater than the data output bandwidth of the core storage array.
G06F 3/06 - Entrée numérique à partir de, ou sortie numérique vers des supports d'enregistrement
G06F 13/16 - Gestion de demandes d'interconnexion ou de transfert pour l'accès au bus de mémoire
G11C 7/06 - Amplificateurs de lectureCircuits associés
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 11/4096 - Circuits de commande ou de gestion d'entrée/sortie [E/S, I/O] de données, p. ex. circuits pour la lecture ou l'écriture, circuits d'attaque d'entrée/sortie ou commutateurs de lignes de bits
H01L 25/065 - Ensembles consistant en une pluralité de dispositifs à semi-conducteurs ou d'autres dispositifs à l'état solide les dispositifs étant tous d'un type prévu dans une seule des sous-classes , , , , ou , p. ex. ensembles de diodes redresseuses les dispositifs n'ayant pas de conteneurs séparés les dispositifs étant d'un type prévu dans le groupe
97.
DRAM REFRESH CONTROL WITH MASTER WORDLINE GRANULARITY OF REFRESH INTERVALS
DRAM cells need to be periodically refreshed to preserve the charge stored in them. The retention time is typically not the same for all DRAM cells but follows a distribution with multiple orders of magnitude difference between the retention time of cells with the highest charge loss and the cells with the lowest charge loss. Different refresh intervals are used for certain wordlines based on the required minimum retention time of the cells on those wordlines. The memory controller does not keep track of refresh addresses. After initialization of the DRAM devices, the memory controller issues a smaller number of refresh commands when compared to refreshing all wordlines at the same refresh interval.
A first sequence of data bits is shifted into storage elements of a signal receiver during a first sequence of bit-time intervals, and a memory access command indicates that a second sequence of data bits is to be received within the signal receiver during a second sequence of bit-time intervals. Contents of the shift-register storage elements are conditionally overwritten with a predetermined set of seed bits, depending on whether one or more bit-time intervals will transpire between the first and second sequences of bit-time intervals. Equalization signals generated based, at least in part, on contents of the shift-register storage elements are used to adjust respective signal levels representative of one or more bits of the second sequence of data bits.
In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
G11C 11/406 - Organisation ou commande des cycles de rafraîchissement ou de régénération de la charge
G06F 1/3234 - Économie d’énergie caractérisée par l'action entreprise
G11C 7/02 - Dispositions pour écrire une information ou pour lire une information dans une mémoire numérique avec des moyens d'éviter les signaux parasites
G11C 7/20 - Circuits d'initialisation de cellules de mémoire, p. ex. à la mise sous ou hors tension, effacement de mémoire, mémoire d'image latente
G11C 11/4072 - Circuits pour l'initialisation, pour la mise sous ou hors tension, pour l'effacement de la mémoire ou pour le préréglage
G11C 11/4074 - Circuits d'alimentation ou de génération de tension, p. ex. générateurs de tension de polarisation, générateurs de tension de substrat, alimentation de secours, circuits de commande d'alimentation
G11C 29/02 - Détection ou localisation de circuits auxiliaires défectueux, p. ex. compteurs de rafraîchissement défectueux
An integrated circuit includes a physical layer interface having a control timing domain and a data timing domain, and circuits that enable the control timing domain during a change in power conservation mode in response to a first event, and that enable the data timing domain in response to a second event. The control timing domain can include interface circuits coupled to a command and address path, and the data timing domain can include interface circuits coupled to a data path.
G06F 1/04 - Génération ou distribution de signaux d'horloge ou de signaux dérivés directement de ceux-ci
G06F 1/08 - Générateurs d'horloge ayant une fréquence de base modifiable ou programmable
G06F 1/3234 - Économie d’énergie caractérisée par l'action entreprise
G06F 1/3237 - Économie d’énergie caractérisée par l'action entreprise par désactivation de la génération ou de la distribution du signal d’horloge
G11C 7/10 - Dispositions d'interface d'entrée/sortie [E/S, I/O] de données, p. ex. circuits de commande E/S de données, mémoires tampon de données E/S
G11C 7/20 - Circuits d'initialisation de cellules de mémoire, p. ex. à la mise sous ou hors tension, effacement de mémoire, mémoire d'image latente
G11C 7/22 - Circuits de synchronisation ou d'horloge pour la lecture-écriture [R-W]Générateurs ou gestion de signaux de commande pour la lecture-écriture [R-W]
G11C 11/4072 - Circuits pour l'initialisation, pour la mise sous ou hors tension, pour l'effacement de la mémoire ou pour le préréglage
G11C 11/4074 - Circuits d'alimentation ou de génération de tension, p. ex. générateurs de tension de polarisation, générateurs de tension de substrat, alimentation de secours, circuits de commande d'alimentation
G11C 11/4096 - Circuits de commande ou de gestion d'entrée/sortie [E/S, I/O] de données, p. ex. circuits pour la lecture ou l'écriture, circuits d'attaque d'entrée/sortie ou commutateurs de lignes de bits
