Abrégé

The present invention relates to a method of obtaining a surface characteristic parameter of a longitudinal orientation marking of a single crystal ingot, to a method of producing an orientation marked single crystal ingot, and to an ingot scanner system for performing the method. The method comprises rotating a single crystal ingot around a rotational axis, recording distances from a measuring point to the surface of the single crystal ingot at the angular positions, comparing the distances with the background shape to identify distances deviating from a background shape, and registering the angular position of distances deviating from the background shape and the corresponding distances. The surface characteristic parameter is defined from consecutive angular positions having distances deviating from the background shape and the corresponding distances. The method allows determination of the surface characteristic parameter at lower uncertainty.

Classes IPC  ?

• C30B 33/00 - Post-traitement des monocristaux ou des matériaux polycristallins homogènes de structure déterminée
• C30B 35/00 - Appareillages non prévus ailleurs, spécialement adaptés à la croissance, à la production ou au post-traitement de monocristaux ou de matériaux polycristallins homogènes de structure déterminée
• G01B 11/30 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la rugosité ou l'irrégularité des surfaces
• G01N 21/00 - Recherche ou analyse des matériaux par l'utilisation de moyens optiques, c.-à-d. en utilisant des ondes submillimétriques, de la lumière infrarouge, visible ou ultraviolette
• G01B 11/08 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des diamètres
• G01B 11/02 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer la longueur, la largeur ou l'épaisseur
• G01B 11/24 - Dispositions pour la mesure caractérisées par l'utilisation de techniques optiques pour mesurer des contours ou des courbes
• C30B 29/06 - Silicium

Abrégé

The present invention relates to a phosphorus doped silicon single crystal having a diameter of at least 175 mm and an axial length in the range of 50 mm to 1000 mm, the phosphorus doped silicon single crystal in a transverse plane having a density of dopant atoms providing a target resistivity (ρNTD) in the range of 5 Ωcm to 2000 Ωcm for a wafer cut from the phosphorus doped silicon ingot, wherein a RRV value of 3% or less as determined according to the SEMI standard SEMI MF81 is obtained for at least 75% of wafers cut from the phosphorus doped silicon single crystal when the resistivity is measured after annealing the silicon at a temperature in the range of 800°C to 1300°C, to a wafer and to a plurality of wafers cut from the phosphorus doped silicon single crystal and to a method of producing a phosphorus doped silicon single crystal. The products of the invention are particularly suited for use in high power electronics.

Classes IPC  ?

• C30B 29/06 - Silicium
• C30B 31/08 - Procédés de diffusion ou de dopage des monocristaux ou des matériaux polycristallins homogènes de structure déterminéeAppareillages à cet effet par contact avec la substance de diffusion à l'état gazeux la substance de diffusion étant un composé des éléments à diffuser
• C30B 31/20 - Dopage par irradiation au moyen de radiations électromagnétiques ou par rayonnement corpusculaire
• H01L 21/261 - Bombardement par des radiations ondulatoires ou corpusculaires pour produire une réaction nucléaire donnant des éléments chimiques par transmutation

Produits et services

Chemicals used in industry, science, photography and the electronic industry, silicones, silicon, including pure silicon. Common metals and their alloys, non-electric cables and wires of metal; silicon iron; goods made of metal, including silicon mixed metal, not included in other classes. Apparatus and instruments for regulating or controlling electricity; solar modules in the form of solar panels for generating energy, solar power transformer, solar cells for generating electricity; solar batteries; apparatus for recording, transmission or reproduction of sound or images; magnetic and optical data carriers, recording discs, compact discs; data processing equipment, computers; electric cables; semiconductors; silicon wafers for use in industry, science, photography and/or the electronic industry. Solar cells for solar installations to produce heat; solar cells for generating heat. Retail and wholesale trade, also via the Internet with silicon semiconductor products and products in the electronic semiconductor industry. Processing and treatment of silicon semiconductor materials and articles; generating electricity from solar energy.