A panel repairing apparatus according to an embodiment of the present invention repairs a defective pattern of a lower layer in a panel having an upper layer and the lower layer and comprises: a laser generator which generates a laser beam; a beam expander unit configured to diverge or converge at least a portion of the laser beam; a flat-top beam unit which processes the laser beam passing through the beam expander unit so that the intensity of the laser beam has a flat-top distribution; and an objective lens unit configured to transmit the laser beam, which is processed to have the flat-top distribution, through the upper layer and focus the laser beam on the lower layer.
G02F 1/13 - Dispositifs ou dispositions pour la commande de l'intensité, de la couleur, de la phase, de la polarisation ou de la direction de la lumière arrivant d'une source lumineuse indépendante, p. ex. commutation, ouverture de porte ou modulationOptique non linéaire pour la commande de l'intensité, de la phase, de la polarisation ou de la couleur basés sur des cristaux liquides, p. ex. cellules d'affichage individuelles à cristaux liquides
G02F 1/1362 - Cellules à adressage par une matrice active
H10K 71/00 - Fabrication ou traitement spécialement adaptés aux dispositifs organiques couverts par la présente sous-classe
H10K 71/70 - Tests, p. ex. tests de durée de vie accélérée
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
B23K 26/06 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples
B23K 26/0622 - Mise en forme du faisceau laser, p. ex. à l’aide de masques ou de foyers multiples par commande directe du faisceau laser par impulsions de mise en forme
2.
INSPECTION APPARATUS, REPAIR APPARATUS, AND PARTICLE BEAM APPARATUS
The present invention provides an inspection apparatus capable of inspecting an object, to be treated in midair, by using a particle beam and a repair apparatus capable of repairing an object, to be treated in midair, by using a particle beam, the inspection apparatus comprising: a column part which is disposed in midair, and of which the inside is controlled to be a vacuum; an opening formed on the column part; a particle beam discharge unit provided inside the column part; and a detection unit provided between the particle beam discharge unit and the object to be treated, and the repair apparatus comprising: a column part which is disposed in midair, and of which the inside is controlled to be a vacuum; an opening formed on the column part; a particle beam discharge unit provided inside the column part; and a gas supply part capable of spraying a source gas.
Provided are a treatment device and a treatment method utilizing same, the treatment device comprising: a support part which is provided in the air and on which an object to be treated can be placed; a chamber part which is disposed on one side of the support part and has an open portion facing the object to be treated; a first discharging part, at least a portion of which is disposed in the chamber part; a second discharging part, at least a portion of which is disposed in the chamber part; an inspection part which is connected to the first and second discharging parts and inspects defects in the object to be treated; and a source supply part connected to the chamber part so as to be able to spray a source for depositing a thin film. The treatment device and the treatment method can inspect and repair the object to be treated provided in the air.
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
G01N 21/95 - Recherche de la présence de criques, de défauts ou de souillures caractérisée par le matériau ou la forme de l'objet à analyser
G01N 23/22 - Recherche ou analyse des matériaux par l'utilisation de rayonnement [ondes ou particules], p. ex. rayons X ou neutrons, non couvertes par les groupes , ou en mesurant l'émission secondaire de matériaux
C23C 16/453 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement en faisant passer les gaz de réaction à travers des brûleurs ou des torches, p. ex. CVD sous pression atmosphérique
G01N 33/00 - Recherche ou analyse des matériaux par des méthodes spécifiques non couvertes par les groupes
The present invention relates to a substrate processing apparatus comprising: a chamber allowing a substrate to enter and exit on one side thereof and having a first space therein; an inner chamber arranged in the first space in the interior of the chamber and having a second space therein; a substrate support, arranged inside the inner chamber, for supporting the substrate; and a gas sprayer for spraying gas on the substrate support, wherein the inner chamber comprises: a first body fixed on the upper side of the interior of the chamber; and a second body arranged below the first body and capable of moving vertically, wherein the first body and the second body are coupled together to create the second space as an isolated space which is isolated from the first space.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
The present invention relates to a substrate processing apparatus comprising: a chamber allowing a substrate to enter and exit on one side thereof and having a first space therein; an inner chamber arranged in the first space inside the chamber and having a second space therein; a substrate support, arranged in the interior of the inner chamber, for supporting the substrate; and a gas sprayer for spraying gas on the substrate support, wherein the inner chamber comprises: a first body fixed on the upper part of the interior of the chamber; a second body arranged below the first body, being capable of moving vertically and having an exhaust hole in the central part of the bottom surface thereof; and an exhaust body connected to the exhaust hole and having a gas exhaust path in the interior thereof.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
6.
METHOD AND APPARATUS FOR MEASURING ANESTHETIC DEPTH USING CEPSTRUM TENIQUE
The present invention relates to a more accurate method for measuring anesthetic depth compared to existing methods for measuring anesthetic depth by using a cepstrum technique, thereby providing an anesthetic depth at an appropriate time even during sudden changes in anesthetic states. The method for measuring anesthetic depth using the cepstrum technique comprises the steps of: a first characteristic vector extraction portion receiving a first EEG signal as an input signal, calculating with a mel-frequency cepstral coefficient (MFCC), and extracting a first characteristic vector; a second characteristic vector extraction portion receiving, as input signals, a second EEG signal from an anesthetic state and a third EEG signal from a non-anesthetic state, calculating with the mel-frequency cepstral coefficient (MFCC), and extracting a second characteristic vector and a third characteristic vector; and a quantifying portion dividing, into a plurality of sections, an area between two axes of a vector flat surface having the second characteristic vector and the third characteristic vector as the two axes, and quantifying a position of the first characteristic vector within the plurality of sections to output an anesthetic depth index.
The present invention rapidly reacts to changes in the degree of anesthesia to provide an accurate and timely anesthetic depth measurement result, and a method for measuring anesthetic depth comprises the steps of: an epoch dividing portion generating an epoch signal by dividing a EEG signal into a plurality of numbers based on time units, a coefficient portion extracting a CAI calculation value (CAI) by calculating the number of points in an epoch having a value higher than an established critical value, a Shannon entropy calculating portion extracting a Shannon entropy calculation value (ShEn) by conducting a Shannon entropy-calculation from the EEG signal, and a spectra entropy calculating portion extracting a spectra entropy value (SpEn) by conducting a spectra entropy calculation; an improved Shannon entropy extracting portion extracting an improved Shannon entropy calculation value (MshEn) by multiplying the Shannon entropy calculation value (ShEn) and the spectra entropy calculation value (SpEn); and a CAI extracting portion extracting an anesthetic depth index (MsCAI) through logical operating of the improved Shannon entropy calculation value(MshEn) and the CAI calculation value (CAI).
There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.
C23F 1/00 - Décapage de matériaux métalliques par des moyens chimiques
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
C23C 16/00 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD]
H01J 37/20 - Moyens de support ou de mise en position de l'objet ou du matériauMoyens de réglage de diaphragmes ou de lentilles associées au support
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
9.
Apparatus for plasma processing and method for plasma processing
There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
C23F 1/00 - Décapage de matériaux métalliques par des moyens chimiques
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
H01L 21/687 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension en utilisant des moyens mécaniques, p. ex. mandrins, pièces de serrage, pinces
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
10.
PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING
Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.
brevets
