It is possible to suppress an adhesion of foreign matters (or particles) to a substrate. There is provided a technique that includes: (a) performing: (a1) supplying a process gas to a substrate arranged in a process chamber through a supplier; and (a2) exhausting a gas in the process chamber through a main exhaust path configured to connect the process chamber to an exhaust apparatus; and (b) exhausting a predetermined gas in the supplier through a subsidiary exhaust path configured to connect the supplier to the main exhaust path without passing through the process chamber, while suppressing or blocking a gas flow from the main exhaust path to the process chamber.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
2.
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
It is possible to improve characteristics of a film formed on a substrate. There is provided a technique that includes: (a) supplying a source gas; (b) supplying a first adsorption promoter; (c) supplying a reactive gas; (d) forming a film on a substrate by sequentially performing (a), (b) and (c) a predetermined number of times; and (e) supplying a first adsorption inhibitor in (d), wherein (e) is performed before (b) or after (b), or (e) is performed before (b) and after (b).
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
A technique includes a substrate holder including: a first boat holding substrates along a predetermined axis and a second boat movable in a direction of the axis, wherein the first and second boats respectively include first and second support columns extending in the direction of the axis and supporting the substrates from outer peripheries, the second boat configured such that the substrates are delivered from the first boat to the second boat and returned from the second boat to the first boat by moving the second boat in both directions along the axis, and wherein elastic deformation of at least one of the first and the second boat when supporting the substrates is set so that no displacement of the at least one of the first and the second boat occurs in a perpendicular direction of the axis after a cycle of delivery and return of the substrates is performed.
Provided is a technology that enables rapid processing of a substrate even when a plurality of types of plasma are used. The technology provided comprises: a processing chamber for processing a substrate; a plasma generation unit that is supplied with high-frequency power from a high-frequency power source and that generates plasma in the processing chamber; a matching unit provided with a first capacitor, a second capacitor, and a switching unit connected to the second capacitor; and a control unit configured so as to be capable of switching the switching unit in accordance with the type of gas to be turned into plasma by the plasma generation unit.
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/318 - Couches inorganiques composées de nitrures
5.
Processing Apparatus, Substrate Processing Apparatus, Processing Method, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium
It is possible to improve a work efficiency when editing a recipe. There is provided a technique that includes: a display displaying a setting value for an item in a recipe and a state of a flag indicating whether the setting value is to be stored, wherein the recipe is constituted by a plurality of steps involving process conditions containing the item and the setting value; and a controller controlling the display such that, in a case of deleting one step, when a flag for an item in the step to be deleted is valid and a flag for the item in a subsequent step is invalid, the flag for the item in the subsequent step is switched to be valid, and a setting value for the item in the step to be deleted is passed on to a setting value for the item in the subsequent step.
G05B 19/18 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique
6.
PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND PROCESSING APPARATUS
A technique that includes: a first process of modifying a predetermined surface of a material, by performing a first operation including: (a1) supplying a precursor gas containing a first predetermined element and a halogen element to the material including the predetermined surface; (a2) after (a1), supplying a first modifying gas containing oxygen to the material; and (a3) after (a1), supplying a second modifying gas, which is different from the first modifying gas, to the material; and a second process of forming a film containing the first predetermined element on the modified predetermined surface after the first process, by performing a second operation a predetermined number of times, the second operation including: (b1) supplying the precursor gas to the material; and (b2) supplying a reaction gas to the material.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
It is possible to save storage capacity by reducing a file size of a recipe. There is provided a technique that includes: a display for a recipe constituted by steps including process conditions containing at least one item and at least one setting value therefor; a controller for: checking, for each step, a flag indicating whether a setting value is to be stored; and when a flag in a specified step is set to be valid, comparing a setting value in the specified step with a setting value in a most recent preceding step whose flag is set to be valid; and switching the flag in the specified step to invalid when it is equal to the setting value in the most recent preceding step; and a first memory storing at least an item and a setting value therefor in a step whose flag is set to be valid.
This invention includes: (a) a step including (a1) a step for supplying a purge gas having a temperature lower than a predetermined temperature into a storage part heated to the predetermined temperature, (a2) a step for moving the thermal energy of the storage part to the purge gas in the storage part, and (a3) a step for exhausting the purge gas from the storage part without supplying the purge gas into the storage part; and (b) a step for performing, after step (a), a plurality of cycles each including (b1) a step for storing, in the storage part, a processing gas obtained by changing the phase of a liquid-phase or solid-phase substance, and (b2) a step for supplying the processing gas in the storage part to the substrate. The time for which step (a2) is performed is greater than the time from the start of step (a3) to the start of step (b1) in the first cycle.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
9.
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
It is possible to prevent damage to a quartz structure inside a process vessel. There is provided a technique that includes: a process vessel of a tubular shape where substrates supported by a boat are accommodated and collectively processed; a mover for moving the boat in an axial direction of the process vessel; a camera outside the process vessel for imaging inside of the process vessel in a state where one end of the process vessel is open and at least a part of the boat is unloaded from the process vessel; and a determination processor causing the camera to capture an image of the inside of the process vessel in a state where the boat unloaded by the mover is located at the one end of the process vessel, and determining a presence or absence of an abnormality and/or a degree of the abnormality from the image captured.
G01N 21/25 - CouleurPropriétés spectrales, c.-à-d. comparaison de l'effet du matériau sur la lumière pour plusieurs longueurs d'ondes ou plusieurs bandes de longueurs d'ondes différentes
G01N 21/88 - Recherche de la présence de criques, de défauts ou de souillures
G01N 21/954 - Inspection de la surface intérieure de corps creux, p. ex. d'alésages
G01N 21/17 - Systèmes dans lesquels la lumière incidente est modifiée suivant les propriétés du matériau examiné
10.
GAS CLEANING METHOD, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
A gas cleaning method includes: (a) removing a first metal element as one of contaminants from a process chamber by supplying a chlorine-containing gas into the process chamber without supplying an oxygen-containing gas; and (b) removing a second metal element as another one of the contaminants from the process chamber by supplying the oxygen-containing gas into the process chamber, wherein (b) is performed after (a).
B08B 5/00 - Nettoyage par des procédés impliquant l'utilisation d'un courant d'air ou de gaz
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
A technique includes: (a) supplying a first precursor to a substrate, (b) supplying a first reactant to the substrate in a first amount, (c) supplying a second reactant to the substrate in a second amount, (d) performing (a) and (b) a predetermined number of times to form a first layer on the substrate, and (e) performing (a) and (c) a predetermined number of times to form a second layer on the substrate.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
The present disclosure provides a method of manufacturing a semiconductor device, including: (a) loading a substrate with a film formed on a surface thereof into a process vessel; (b) generating a reactive species containing oxygen and a reactive species of a rare gas by converting a mixed gas containing the rare gas and an oxygen-containing gas into a plasma state; and (c) oxidizing the film by supplying the reactive species containing oxygen to the substrate together with the reactive species of the rare gas. In (b), a partial pressure ratio PN / PT, which is a ratio of a partial pressure PN of the rare gas in the process vessel to a total pressure PT of the mixed gas in the process vessel, is set to a value of 0.4 or less.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
13.
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
A technique that includes: a substrate mounting table on which a substrate is mounted, a substrate mover configured to move the substrate on the substrate mounting table, a process container in which the substrate is processed, and a controller configured to be capable of controlling the substrate mover, from a start of a film forming process in which a gas is supplied to the substrate in the process container and a film of a desired thickness on the substrate, before a film of a critical thickness at which the substrate cannot be separated off from the substrate mounting table by the substrate mover is formed, the controller moves the substrate placed on the substrate mounting table, and then performs a separation process that returns the substrate onto the substrate mounting table.
Described herein is a technique capable of forming a film so as to fill a recess of a substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table on which a substrate is placed; an adsorption inhibiting gas supplier configured to supply an adsorption inhibiting gas onto a surface of the substrate from above the substrate mounting table; and a source gas supplier configured to supply a source gas onto the surface of the substrate from above the substrate mounting table, wherein a distance D1 between a gas supply port provided in the adsorption inhibiting gas supplier and the substrate is greater than a distance D2 between a gas supply port provided in the source gas supplier and the substrate.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/54 - Appareillage spécialement adapté pour le revêtement en continu
15.
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
A technique includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a layer on the substrate by performing a process, which includes: (a) supplying a precursor gas containing a halogen element to the substrate; and (b) supplying a reaction gas to the substrate, wherein the cycle is performed under a formation condition set based on a predetermined relationship between an amount of the halogen element contained in the layer and a proportion of crystallites oriented in a predetermined crystal plane in the film.
C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
It is possible to easily identify a location causing or likely to cause the interlock. There is provided a technique that includes: detectors in modules constituting a substrate processing apparatus, for detecting physical states thereof to output detection signals therefor; an interlock determination processor storing interlock conditions establishing interlocks to determine whether each interlock is established based on the detection signals; and a display controller for graphically displaying, on a display, a module corresponding to a first factor establishing an interlock in a case where the interlock is established or corresponding to a second factor preventing the interlock from being established in a case where the interlock occurs if a physical state satisfies a condition among the interlock conditions corresponding thereto, such that the module is recognizable on an image indicating a structure of the substrate processing apparatus.
A technique includes: (a) supplying a process gas, obtained by subjecting an object in liquid-phase or in solid-phase to a phase change, to a substrate in a process chamber along a path passing through a first section; and (b) after (a), performing: (b1) storing a purge gas in a second section; and (b2) exhausting the first section along a path that does not pass through the process chamber, while supplying the purge gas stored in the second section to the first section.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
The present invention includes: a) a step for supplying a first raw material to a substrate; b) a step for supplying a first reactant to the substrate; c) a step for supplying a second reactant different from the first reactant to the substrate; d) a step for supplying an additive to the substrate; e) a step for performing a) and b) a first number of times in this order; and f) a step for performing d) and c) a second number of times.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
H01L 21/318 - Couches inorganiques composées de nitrures
19.
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
There is provided a gas supply assembly that includes a first nozzle configured to supply a process gas to a process chamber that processes a substrate and at least one second nozzle configured to supply an inert gas to the process chamber. The at least one second nozzle has a gas supply hole opened toward a side of the first nozzle rather than a center of the substrate to direct a flow direction of the process gas toward the substrate by forming a vortex flow of gas to overlap with at least a part of a peripheral edge portion of the substrate in the process chamber.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
20.
METHOD OF DISPLAYING SUBSTRATE ARRANGEMENT DATA, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
According to one aspect of the technique of the present disclosure, there is provided a method of displaying substrate arrangement data, including: (a) setting each of a transport parameter for determining at least an arrangement of substrates to be loaded into a substrate retainer and carrier information of a carrier storing the substrates to be loaded into the substrate retainer; (b) creating the substrate arrangement data of a case where the substrates are loaded into the substrate retainer based on the transport parameter and the carrier information set in (a); and (c) displaying the substrate arrangement data at least comprising data representing the arrangement of the substrates in a state where the substrates are loaded in the substrate retainer.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
G05B 19/418 - Commande totale d'usine, c.-à-d. commande centralisée de plusieurs machines, p. ex. commande numérique directe ou distribuée [DNC], systèmes d'ateliers flexibles [FMS], systèmes de fabrication intégrés [IMS], productique [CIM]
According to the present disclosure, there is provided a technique capable of substantially uniformizing the quality of each substrate by setting the position of the substrate in accordance with the process conditions for each step of the substrate processing. According to one aspect thereof, there is provided a substrate processing apparatus including: a support structure capable of supporting at least a substrate; and a controller provided with a memory in which a recipe capable of setting a support position of the substrate is stored, wherein the controller is configured to be capable of controlling an operation of elevating and lowering the support structure such that the support position set in the recipe is located at a predetermined reference position.
Included is (a) modifying a surface of a first material by exposing a substrate, the surface of which includes the first material and a second material containing the same element as an element contained in the first material, to the modifying agent; and (b) etching the second material by exposing the substrate, in which the surface of the first material has been modified, to an etching agent.
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM, GAS SUPPLY SYSTEM AND SUBSTRATE PROCESSING APPARATUS
There is provided a technique capable of suppressing a deterioration of one or both of a uniformity of film characteristics within a surface of a substrate and a uniformity of the film characteristics between surfaces of substrates, caused by an insufficient supply of a source gas. The technique may include: (a) storing a source gas in a first gas pipe by closing a first valve of the first gas pipe and supplying the source gas from an upstream side of the first gas pipe; and (b) supplying the source gas and a first inert gas through the first gas pipe to a substrate by opening the first valve of the first gas pipe and supplying the first inert gas from the upstream side of the first gas pipe.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
SUBSTRATE PROCESSING APPARATUS, GAS SUPPLY SUPPRESSION STRUCTURE, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
There is provided a technique that includes: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and capable of supporting a first substrate or a second substrate having an outer diameter smaller than that of the first substrate; a gas supplier including an annular first region provided at a position facing the substrate support and having an inner diameter larger than the outer diameter of the second substrate, and a second region provided on an inner peripheral side of the first region, and capable of supplying gas into the process chamber from the first region and the second region; and a suppressor configured to suppress supply of gas from the first region into the process chamber when the second substrate is processed.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
25.
SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATING DEVICE, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RECORDING MEDIUM
Provided is a substrate processing technique that improves processing uniformity. The technique includes a process chamber configured to process a substrate, and a first electrode unit. The first electrode unit includes: a first electrode portion having a first electrode, to which high-frequency power is applied, and one second electrode, to which a reference potential is applied, the first and second electrodes of the first electrode portion having equal lengths; a second electrode portion having one first electrode and one second electrode whose lengths differ from those of the first and second electrodes of the first electrode portion; and a third electrode portion having one first electrode and one second electrode whose lengths differ from those of the electrodes in both the first electrode portion and the second electrode portion.
There is provided a technique that includes: (a) preparing a first process container in which a substance X-containing layer is formed; (b) loading a substrate into the first process container in which the substance X-containing layer is formed; and (c) supplying a first processing agent to the substrate in the first process container in which the substance X-containing layer is formed, such that the first processing agent reacts with a substance X derived from the substance X-containing layer, thereby etching a surface of the substrate.
A technique improves productivity by shortening a heating time of a substrate. The a technique includes: a process chamber in which a substrate is heated; a container in which an unprocessed substrate to be loaded into the process chamber or a processed substrate unloaded from the process chamber is mounted; a supplier that supplies a fluid for heating the unprocessed substrate mounted in the container or cooling the processed substrate; a discharger that discharges the fluid from the container; an accumulator in which the fluid heated by cooling the processed substrate is accumulated; and a controller capable of performing control so as to supply the fluid accumulated in the accumulator to the container to heat the unprocessed substrate.
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
C23C 16/52 - Commande ou régulation du processus de dépôt
A technique includes: (a) setting a supply amount of a modifying agent based on a relationship between the supply amount of the modifying agent and a saturated adsorption property of a precursor on the substrate; and (b) supplying the modifying agent to the substrate based on the set supply amount.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
29.
Substrate Processing Apparatus, Method of Detecting Tilt of Substrate Retainer, Substrate Processing Method, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium
It is possible to detect a tilt of a substrate retainer by a technique that includes: a rotator rotatably supporting a substrate retainer provided with support columns; a sensor attached to a transfer robot for transferring a substrate to the substrate retainer such that a distance between the sensor and the substrate retainer and a relative height of the sensor with respect to the substrate retainer are variable, and configured to detect the support columns within an optical path; and a controller capable of: (a) causing the rotator to rotate the substrate retainer such that the support columns intersect with the optical path; (b) calculating center positions of the substrate retainer from detection results of the sensor at a plurality of heights; and (c) determining whether a tilt of the substrate retainer is within a reference degree based on a difference in the center positions in a height direction.
A technique includes: forming a film of a predetermined substance containing a first element by performing a cycle a predetermined number of times, the cycle including: (a1) supplying, under a predetermined condition, a first gas to a substrate, which includes a recess on a surface, to deposit a first substance containing the first element on the surface, wherein the predetermined condition satisfies: a temperature condition that a substrate temperature is equal to or higher than a decomposition temperature of the first gas, and a first condition that an amount of the first substance adsorbed on an opening portion of the recess increases during a first period after starting supplying the first gas, the amount gradually approaches a predetermined value during a second period after the first period, and the amount increases during a third period after the second period, and wherein (a1) is ended during the second period.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
31.
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
A technique includes preparing a substrate bonded to a semiconductor chip by micro bumps formed on at least one of a first surface of the substrate, which is a bonding surface side that bonds with the semiconductor chip, and a second surface of the semiconductor chip, which is a bonding surface side that bonds with the substrate; and forming, on the first surface and the second surface, a liner film including an insulating film so as to form a surface on which an underfill film can be formed between the substrate and the semiconductor chip.
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING HARD MASK, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
There is provided a technique that includes: (a) forming a multilayer film of a predetermined thickness with a controlled grain size on a substrate by performing a cycle a predetermined number of times, and patterning the multilayer film to prepare the substrate provided with a patterned multilayer film, wherein the cycle includes: (a-1) depositing a first film by exposing the substrate provided with a drift layer formed thereon to a source gas; and (a-2) exposing the substrate to a crystal growth inhibiting gas or a predetermined gas capable of forming a second film whose film quality is different from that of the first film; and (b) performing an ion implantation using the patterned multilayer film as a hard mask, wherein the multilayer film is more easily etched than the drift layer.
It is possible to perform a modification process while suppressing a heat diffusion. There is provided a technique that includes: preparing a substrate provided with at least a first film formed thereon; and modifying the substrate by supplying an electromagnetic wave to the substrate while maintaining a temperature of the substrate equal to or less than a predetermined temperature such that an absorption rate of the electromagnetic wave of the first film is higher than an absorption rate of the electromagnetic wave of the substrate.
A technique capable of reducing particles adhering to a substrate is provided includes a process chamber that processes a substrate in a state of being held by a substrate holder; a transfer chamber which is adjacent to the process chamber and in which the substrate holder can be arranged; and an injector that is arranged in the transfer chamber, is configured to be movable along a longitudinal direction of a column of the substrate holder in the transfer chamber, and injects gas toward the column.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
There is provided a technique that includes: a process vessel in which a first space and a second space located above the first space are provided; a mounting structure on which a substrate is placed; a driver configured to drive the mounting structure; a first supplier configured to control a supply of a first gas into the process vessel; a second supplier configured to control a supply of a second gas into the process vessel, wherein a molecular structure of the second gas is different from a molecular structure of the first gas; and a controller configured to be capable of controlling the driver, the first supplier and the second supplier to sequentially perform: (a) supplying the first gas to the substrate in the first space; (b) moving the substrate into the second space; and (c) supplying the second gas to the substrate in the second space.
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
A technique includes (a) preparing a substrate including a first film formed inside a recess, a surface of the first film inside the recess being terminated with a first termination that reduces wettability with respect to a processing liquid; and (b) removing at least a portion of the first film formed in a first region on an opening side of the recess while leaving the first film formed in a second region on a bottom side of the recess by supplying the processing liquid to the substrate and selectively exposing, to the processing liquid, the surface of the first film formed in the first region with respect to the surface of the first film formed in the second region.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/52 - Commande ou régulation du processus de dépôt
There is provided a technique that includes: a process vessel in which a substrate is accommodated and processed; a plasma generator configured to generate a plasma in the process vessel; a calculator configured to calculate a cumulative amount of an electric power output by the plasma generator during a processing of the substrate; a memory configured to store, as a master cumulative amount, the cumulative amount at an end of the processing of the substrate when a result of the processing of the substrate is normal; and a controller configured to be capable of controlling a progress of the processing of the substrate based on a recipe defining process conditions containing a process time for the substrate, and capable of calculating a correction time for the process time from a difference between the cumulative amount calculated by the calculator and the master cumulative amount.
The present invention comprises: a display unit that is capable of displaying, in table form in which a recipe obtained by defining, for each of a plurality of steps, a condition for processing a substrate is defined by the axis of the steps and the axis of a plurality of items constituting the condition, an editing screen which displays a plurality of setting values set for intersections of the plurality of items and the plurality of steps; and a control unit that is capable of controlling the display unit so as to change the display order of the plurality of items in accordance with an order of priority set for each of the plurality of items, and display the editing screen in the changed display order.
The present invention includes: a) a step of supplying a first gas containing a first element and a first halogen to a member having an oxide film, thereby removing at least a portion of the oxide film; (b) a step of supplying an oxygen-containing gas to the member; (c) a step of supplying a second gas containing a second halogen to the member, in an atmosphere not containing oxygen; and (d) a step of sequentially performing (a), (b), and (c).
The present invention performs: a step (a) for forming a film on the surface of a vibrator by executing, a first number of times, a first cycle comprising a step (a-1) for supplying a raw material to the surface of the vibrator and a step (a-2) for supplying a reactant to the surface of the vibrator; a step (b) for detecting the resonant frequency of a vibrator sensor during execution of (a-1); and a step (c) for, on the basis of the amount of change in the vibrational frequency detected in (b) with respect to time, calculating a first timing at which the amount of adsorption of the raw material to the surface of the vibrator becomes saturated in (a-1) and/or a second timing at which initial incubation of adsorption of the raw material to the surface of the vibrator is completed.
H01L 21/318 - Couches inorganiques composées de nitrures
C23C 16/52 - Commande ou régulation du processus de dépôt
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
43.
SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND PROGRAM
The present invention provides technology capable of measuring the temperature of a substrate during processing. Provided is technology comprising: a processing chamber in which a substrate held by a substrate holding unit is to be processed; an electromagnetic wave generator that supplies electromagnetic waves to the processing chamber; a rotation unit that rotates the substrate holding unit; and a temperature measurement unit that has a member composed of a material to be heated by heat radiated from the substrate.
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
H01L 21/26 - Bombardement par des radiations ondulatoires ou corpusculaires
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/324 - Traitement thermique pour modifier les propriétés des corps semi-conducteurs, p. ex. recuit, frittage
44.
Gas Supply Method, Method of Manufacturing Semiconductor Device, Gas Supply System, Substrate Processing Apparatus and Non-transitory Computer-readable Recording Medium
It is possible to stably supply a gas obtained by gasifying a material to a process chamber. There is provided a technique that includes: (a) exhausting a process gas containing a specified gas obtained by gasifying a material stored in a container such that the process gas is exhausted without passing through a process chamber; and (b) supplying the process gas to the process chamber, wherein a cycle comprising at least (b) is performed a plurality of times, and wherein, in a first execution of the cycle, (b) is performed by switching from (a) when a flow rate of the specified gas reaches a saturated state.
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
45.
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
There is provided a configuration that includes: at least one transfer mechanism configured to transfer a substrate and at least one processing mechanism configured to process the substrate; an earthquake detector configured to detect an earthquake; and a controller configured to control the at least one transfer mechanism and the at least one processing mechanism according to a detection result of the earthquake detector, wherein the controller is configured to be capable of performing a stopping operation of the at least one transfer mechanism according to a P wave (initial tremor wave) and an S wave (principal fluctuation wave).
It is possible to suppress an increase in a wire temperature of an auxiliary heater and to ensure the life of the auxiliary heater. There is provided a technique that includes: a first heater divided into a plurality of zones and configured to heat a process vessel in which a substrate is arranged; a second heater configured to assist in heating a specific zone among the plurality of zones by the first heater; a temperature sensor configured to detect a temperature of the second heater; and a controller configured to be capable of controlling an inner temperature of the process vessel to a target temperature by limiting an output of the second heater when the temperature detected by the temperature sensor is equal to or higher than a predetermined temperature lower than the target temperature.
The present invention comprises: a step (a) for preparing a substrate that includes a metal-containing film containing impurities; a step (b) for supplying a carboxy group-containing fluid to the metal-containing film at a first temperature and removing the impurities from the metal-containing film; and a step (c) for heating, in a non-oxidizing atmosphere, the metal-containing film from which the impurities have been removed to a second temperature higher than the first temperature.
The present invention provides a technology enabling formation of a uniform film in the plane of the substrate. The present invention is equipped with: a processing chamber for processing a substrate; and an irradiation unit having a first electrode to which high-frequency power is applied, a second electrode that is grounded, and an insulating member provided between the first electrode and the second electrode, the outer diameter of the insulating member being 3.5 times or more the outer diameter of the first electrode.
Substrate Processing Apparatus, Gas Supply System, Substrate Processing Method, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium
To easily supply a large flow rate of a process gas into a process chamber, a technique includes: a first flow path one end of which is connected to a first supply source configured to supply a process gas and the other end of which is connected to a process chamber in which a substrate is processed; a first opening/closing structure provided at the first flow path; a second opening/closing structure provided at the first flow path between the first opening/closing structure and the process chamber; a second flow path one end of which is connected to the first flow path between the first opening/closing structure and the second opening/closing structure and the other end of which is connected to an exhaust apparatus; a storage provided at the second flow path; and a third opening/closing structure provided at the second flow path between the storage and the exhaust apparatus.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/52 - Commande ou régulation du processus de dépôt
50.
SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
A technique includes: first and second process modules respectively including first and second process containers configured to process a substrate; first and second utilities respectively including first and second supply systems configured to supply process gas into the process containers, wherein the first and second process modules respectively include first and second outer side surfaces on sides of the first and second process modules opposite to surfaces of the process modules adjacent to each other and are parallel in a front-rear direction, wherein the first utility includes a first side box protruding outward than the first outer side surface and accommodating a part of the first supply system disposed such that maintenance is performed through access from at least one selected from the group of a front, a rear, and a top side of the first side box, and not from a side surface of the first side box.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
METHOD OF DETERMINING ROTATIONAL SPEED, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
A technique of determining a rotational speed of a substrate, applied in a substrate processing including intermittently supplying, to the rotating substrate, a process gas from an outer edge of the substrate toward an in-plane direction at a constant interval, a predetermined number of times K, during a predetermined duration T, includes: (a) calculating an evaluation value E corresponding to each of a plurality of candidate values N, which are candidate values for the selectable rotational speed of the substrate, based on: at least one selected from the group of the predetermined duration T and a supply interval I of the process gas; the predetermined number of times K; and each of the candidate values N; and (b) determining the rotational speed of the substrate to be applied in the substrate processing from among the candidate values N based on the evaluation value E calculated for each candidate value N.
Provided is a technique with which it is possible to detect lateral displacement of a substrate on a boat by using a mapping sensor provided in a transfer machine. Provided is a technique comprising: (a) a step for placing substrates in multiple levels on a boat by means of a substrate transfer machine provided with an end effector for gripping the substrates; and (b) a step for controlling a boat rotator that rotates the boat, and a mapping sensor having an optical axis in a plane perpendicular to the axis of rotation of the boat rotator, to attempt to detect the substrates held by the boat from at least two directions including a direction different from the direction in which the substrates are transferred to the boat.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
53.
SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
There is provided a technique that includes a process container including a cylindrical portion, a process chamber being formed in the process container and a substrate being arranged in the process chamber; a gas supplier configured to supply a processing gas to the process chamber; an electrode installed in a spiral shape to surround the process container from outside of the cylindrical portion of the process container and supplied with high-frequency power to plasma-excite the processing gas; and a mover configured to be capable of moving the electrode with respect to the process container in a radial direction of the cylindrical portion.
A technique includes: a first step including: (a1) storing a process gas in a reservoir; and a second step of performing a cycle a predetermined number of times after the first step, the cycle including sequentially performing: (b1) storing the process gas in the reservoir; and (b2) supplying at least a portion of the process gas in the reservoir to a substrate accommodated in a process chamber.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/448 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs
55.
REACTION TUBE, SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
There is provided a technique capable of uniformizing a flow of a gas discharged from a discharger by reducing a pressure difference in a substrate arrangement region of a process chamber. According to one aspect of the technique, there is provided a reaction tube in which a process chamber is provided and including an adjusting structure configured to suppress a flow of a gas discharged from a discharger, wherein a gas supplier is provided at one end of the process chamber and the discharger is provided at the other end of the process chamber, and a flow of the gas from the gas supplier to the discharger in the process chamber is adjusted by the adjusting structure such that the flow of the gas discharged from the discharger is uniformized.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
The present invention comprises a display unit that can display an editing screen that shows a recipe that defines conditions for processing a substrate at each of a plurality of steps in the form of a table defined by an axis for a plurality of items that constitute the conditions and an axis for the steps such that it is possible to edit a plurality of setting values that are set at the intersections between the items and the steps, a selection unit that selects respective display modes for the plurality of setting values on the basis of display setting information that sets display modes for display of the plurality of setting values by ranges for the setting values, and a control unit that can control the display unit to display the plurality of setting values on the editing screen in the respective display modes selected by the selection unit.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
57.
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
There is provided a technique that includes (a) supplying a fluorine-containing gas to a substrate including a first surface and a second surface; (b) supplying an oxygen- and hydrogen-containing gas and a catalyst to the substrate after performing (a); (c) supplying a modifying agent to the substrate after performing (b); and (d) supplying a film-forming agent to the substrate after performing (c).
A technique that includes : a process chamber in which a substrate is processed with a gas; a plasma generator configured to convert the gas into a plasma state; a supply pipe installed at an upstream side of the process chamber; an exhaust pipe installed at a downstream side of the process chamber; a valve installed at a downstream side of the exhaust pipe; and an attenuator configured to attenuate an energy of the gas in the plasma state, the attenuator being installed at the exhaust pipe at a position closer to the valve than the process chamber, or installed at an upstream side of a connection between the supply pipe and the process chamber.
A technique includes a gas supply system including: a plurality of gas supply lines connected to a process chamber, wherein each of the plurality of gas supply lines includes an inlet-side valve through which a gas flows in, a storage in which the gas is accumulated through the inlet-side valve, and an outlet-side valve through which the gas flows out of the storage; and a regulator installed in at least one of the plurality of gas supply lines and is configured to be capable of regulating a flow path resistance of the gas supply line such that gas supply amounts from the plurality of gas supply lines into the process chamber are matched.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
The present invention comprises: a display unit capable of displaying a recipe, in which conditions for processing a substrate is defined for each of a plurality of steps, on an edit screen which includes a setting value display region for displaying, in a table format defined by the axis of the steps and the axis of a plurality of items constituting the conditions, a plurality of setting values set at intersections between the plurality of items and the plurality of steps, and includes a setting value selection instruction region configured to be able to receive an operation instruction including at least a selection operation for the plurality of setting values, and which is configured such that the plurality of setting values are editable; and a control unit capable of performing control to receive an operation instruction regarding the setting values for the setting value selection instruction region, execute the operation instruction for the plurality of setting values displayed in the setting value display region, and edit the edit screen.
There is provided a technique that includes (a) supplying a first-element-containing gas to the substrate; (b) supplying a first reducing gas to the substrate; (c) supplying a second reducing gas, which is different from the first reducing gas, to the substrate; (d) supplying a third reducing gas, which is different from both the first reducing gas and the second reducing gas, to the substrate; (e) after a start of (a), performing (b) in parallel with (a); (f) in (e), performing (d) in parallel with (b); and (g) forming a first-element-containing film on the substrate by alternately performing (e) and (c) a predetermined number of times.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
The present invention comprises: a) a step for supplying a first reactant to a substrate having a recess provided with an opening in a side wall, at a first supply amount at which a Knudsen diffusion amount in the opening is less than a prescribed amount; b) a step for supplying a first adsorption inhibitor to the side wall; c) a step for supplying a raw material into the opening; d) a step for supplying a second reactant into the opening; e) a step for performing step b) after step a); and f) a step for performing steps c) and d) a prescribed number of times to preferentially form, within the opening, a film that contains an element contained in the raw material.
H01L 21/316 - Couches inorganiques composées d'oxydes, ou d'oxydes vitreux, ou de verres à base d'oxyde
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
H01L 21/318 - Couches inorganiques composées de nitrures
65.
SUBSTRATE PROCESSING METHOD, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Described herein is a technique capable of stabilizing conditions in a furnace at the start of a film-forming process. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: pre-processing of preparing a process environment in a process furnace of a substrate processing apparatus; film-forming by processing a substrate; and post-processing, wherein the pre-processing comprises (a1) determining whether to execute a maintenance recipe for a target object in the substrate processing apparatus, wherein (a1) is performed first in the pre-processing.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/52 - Commande ou régulation du processus de dépôt
It is possible to increase a flow path area of a gas. There is provided a technique that includes: a first nozzle and a second nozzle facing a peripheral edge of a substrate and extending perpendicular to a main surface of the substrate. Each nozzle includes a front surface facing the substrate and ejection holes thereon parallel to the main surface. An angle of a normal to the front surface relative to a direction from a center of the nozzles toward a center of the substrate at positions where the ejection holes are located increases in an arrangement order of the ejection holes. An ejection hole of the first nozzle closest to the second nozzle and an ejection hole of the second nozzle closest to the first nozzle are located on a substantially same tangent plane such that the directions of gases being ejected are substantially parallel to each other.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
Provided is a technique for heating a substrate so as to equalize the temperature of the substrate. The present invention comprises a heat insulator including a heat storage material disposed in the vicinity of a substrate accommodated in a reaction container configured to be heated to a predetermined temperature, wherein the heat storage material is configured such that, when the melting point of the heat storage material is higher than the predetermined temperature, the heat storage material is solid, and when the melting point of the heat storage material is lower than the predetermined temperature, the heat storage material is liquid.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
68.
SUBSTRATE PROCESSING APPARATUS, PROTECTOR, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
There is provided a technique that includes: a process container configured to process a substrate; a gas supplier configured to be capable of supplying a gas that processes the substrate into the process container; a protector arranged along an inner peripheral surface of the process container, a height of the protector being adjustable by rotation in a circumferential direction; and a controller configured to be capable of performing a control to process the substrate by supplying the gas after the height of the protector is adjusted.
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/52 - Commande ou régulation du processus de dépôt
69.
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A technique includes a supply process including: (a0) supplying a process gas into a process chamber in which a substrate including a recess on a surface of the substrate is placed; (a1) increasing an internal pressure of the process chamber at least partially simultaneously with (a0); (a2) decreasing the internal pressure of the process chamber; and (b) supplying a dilution gas into the process chamber or increasing a flow rate of the dilution gas supplied into the process chamber, the supply process being performed so that the internal pressure of the process chamber reaches one or more local maximum values; and an exhaust process of exhausting an interior of the process chamber during at least a portion of the supply process, wherein, in the supply process, (b) is started before (a2) ends for a first time.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
C23C 16/52 - Commande ou régulation du processus de dépôt
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
The present invention has (a) a step for supplying a first gas containing a group 14 element and forming a first film containing the group 14 element contained in the first gas preferentially on a group 14 element exposed surface on the bottom side of a recess of a substrate, (b) a step for supplying a second gas containing a group 14 element and forming, in the recess of the substrate, a second film containing the group 14 element contained in the second gas, (c) a step for supplying a third gas containing a second halogen element and etching a portion of the second film, and (d) a step for removing, after (c), the second halogen element remaining on the substrate.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
C23C 16/04 - Revêtement de parties déterminées de la surface, p. ex. au moyen de masques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
71.
SUBSTRATE PROCESSING APPARATUS, ELECTRODE STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
According to the present disclosure, there is provided a technique capable of performing a substrate processing more uniformly. According to one aspect thereof, there is provided an electrode structure capable of generating a plasma, including: a first electrode group constituted by: at least one first electrode to which an electric potential is applied; at least one second electrode whose length is different from that of the first electrode and to which an electric potential is applied; and at least one third electrode to which a reference potential is applied; and a second electrode group constituted by: at least one fourth electrode to which an electric potential is applied; at least one fifth electrode whose length is different from that of the fourth electrode and to which an electric potential is applied; and at least one sixth electrode to which the reference potential is applied.
There is provided a technique that includes at least one load port capable of mounting a substrate storage container that stores a substrate, a controller configured to be capable of performing: a switching control to switch a first function of using the at least one load port to load or unload the substrate storage container and a second function of mounting the substrate storage container on the at least one load port; and an erroneous operation prevention control to execute an erroneous operation prevention operation to the substrate storage container arranged on the at least one load port according to use modes associated with the first function and the second function; and a process chamber configured to process the substrate.
There is provided a technique that includes: forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor to the substrate; (b) supplying a nitriding agent to the substrate; and (c) supplying an active species X, which is generated by plasma-exciting an inert gas, to the substrate, wherein a stress of the nitride film is controlled to be between a tensile stress and a compressive stress or is controlled to be the compressive stress by controlling an amount of exposure of the active species X to a surface of the substrate in (c).
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/452 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour produire des courants de gaz réactifs, p. ex. par évaporation ou par sublimation de matériaux précurseurs par activation de courants de gaz réactifs avant l'introduction dans la chambre de réaction, p. ex. par ionisation ou par addition d'espèces réactives
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
There is provided a technique that includes a processor configured to be capable of executing a process recipe to process a substrate; and a pressure controller configured to be capable of controlling a pressure of a process chamber, in which the substrate is processed, by adjusting an opening degree of a pressure regulating valve provided to an exhaust line of the process chamber, wherein when controlling the pressure of the process chamber, the pressure controller adjusts the opening degree of the pressure regulating valve and outputs information of the opening degree, and wherein while receiving the information of the opening degree from the pressure controller and monitoring an open/close state of the pressure regulating valve, the processor is configured to, when the information of the opening degree is a preset value, be capable of determining whether or not opening/closing of the pressure regulating valve happens.
A substance on a substrate is removed by performing: (a) supplying a first gas, which is one of an etching gas containing a halogen element and a reactant gas reacting with the etching gas, to a substrate from a first feeder; and (b) supplying a second gas, which is another of the etching gas and the reactant gas and is different from the one of the etching gas and the reactant gas, from a second feeder different from the first feeder to the substrate, while executing (a), so as to adjust a distribution of a partial pressure of a reaction product generated by a reaction between the first gas and the second gas in a plane of the substrate.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
A technique includes: performing a film formation operation of forming a film containing a metal element on a first surface preferentially over a second surface of a substrate, the act of performing the film formation operation including: (a) forming metal-containing substance containing metal element on at least a portion of the substrate by performing: (a1) supplying a first gas containing the metal element to the substrate including the first surface as a surface of first substance and the second surface as a surface of second substance; and (a2) supplying a second gas containing the metal element to the substrate; and (b) supplying a reaction gas to the substrate, wherein (a) includes a period TC during which (a1) and (a2) are performed simultaneously, wherein the first gas etches the metal-containing substance at a first rate, and wherein the second gas etches the metal-containing substance at a second rate.
It is possible to improve a productivity of substrate processing. There is provided a technique that includes: a process chamber; a source material supplier provided with containers storing the source material and capable of being replaced; a determination processor configured to check a remaining amount of the source material in a container currently in use among the containers during a substrate processing, and further configured to determine, from the remaining amount, whether or not a supply source of the source material needs to be switched from the container currently in use to a container in standby among the containers; and a controller configured to be capable of controlling the supply of the source material to be continuously performed by switching the container currently in use to the container in standby based on a determination result obtained by the determination processor.
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
78.
SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
It is possible to improve a film forming rate. There is provided a technique that includes: (a) supplying a first gas containing a primary element constituting a film and a halogen element to a substrate; (b) supplying a first reducing gas containing hydrogen to the substrate; (c) supplying a second reducing gas containing hydrogen to the substrate, wherein a material of the second reducing gas is different from that of the first reducing gas; (d) performing (a) and (b) in parallel, wherein a supply amount of the first reducing gas is decreased compared to that of when a supply of the first reducing gas is started while performing (a) and (b) in parallel; and (e) performing (d) and (c) a predetermined number of times to form the film on the substrate.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/52 - Commande ou régulation du processus de dépôt
There is provided a technique that includes a process chamber configured to process a substrate; a substrate-mounting part configured to support the substrate in the process chamber; a gas supply part configured to supply a gas to the process chamber; a high-frequency power supply part configured to supply high-frequency power of a predetermined frequency; a first resonance coil wound to surround the process chamber and configured by a first conductor that forms plasma at the process chamber when the high-frequency power is supplied; a second resonance coil wound to surround the process chamber and configured by a second conductor that forms plasma at the process chamber when the high-frequency power is supplied; and a controller configured to control the high-frequency power supply part so that a period of power supply to the first resonance coil does not overlap with a period of power supply to the second resonance coil.
Provided is a control valve structure comprising a plurality of valves, wherein: the plurality of valves are provided in an exhaust pipe that exhausts the atmosphere of a processing chamber; each of the plurality of valves is configured such that the flow path cross-sectional area thereof is smaller than the flow path cross-sectional area of the exhaust pipe; and the sum of the flow path cross-sectional areas of the plurality of valves is larger than the flow path cross-sectional area of the exhaust pipe.
The present invention includes a step for etching a surface of a substrate by performing, a predetermined number of times, (a) a step for supplying a substance M that is filled in a first storage part in a gas state to the substrate that is under a reduced pressure a predetermined number of times so as to have the substance M adsorbed on the substrate, (b) a step for performing at least either supply of a purge gas to the substrate or exhaust of a space in which the substrate is present so as to desorb some of the substance M while leaving some of the substance M adsorbed on the substrate, (c) a step for supplying an etching agent to the substrate so as to have the substance M adsorbed and left on the substrate react with the etching agent, thereby generating an etching species, and (d) a step for performing at least either purge or exhaust of the space.
The present invention provides a technology which is capable of adjusting characteristics of a film. The present invention includes: (a) a step for supplying a first gas that contains a first element and chlorine to a substrate; (b) a step for supplying a second gas that contains iodine to the substrate; (c) a step for supplying a third gas that contains a second element to the substrate; (d) a step for forming a first film that contains the first element on the substrate by performing the steps (a) and (c) X times; and (e) a step for forming a second film that contains the first element and iodine on the substrate by performing the steps (a), (b), and (c) Y times.
H01L 21/285 - Dépôt de matériaux conducteurs ou isolants pour les électrodes à partir d'un gaz ou d'une vapeur, p. ex. condensation
C23C 16/08 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le dépôt d'un matériau métallique à partir d'halogénures métalliques
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
83.
SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Provided is a technique comprising: a preparation step for preparing a substrate in a state in which a resist removal process has been performed on the substrate, the substrate having an organic interlayer insulating film, a first metal-containing film that contains a first metal, a first diffusion prevention film that is provided between the first metal-containing film and the organic interlayer insulating film, and a resist that is formed on the side of the first metal-containing film; and a diffusion prevention film formation step for forming a second diffusion prevention film in a space between the organic interlayer insulating film and the first metal-containing film, the space being formed by removing a portion of the first diffusion prevention film in the resist removal process.
H01L 21/3205 - Dépôt de couches non isolantes, p. ex. conductrices ou résistives, sur des couches isolantesPost-traitement de ces couches
H01L 21/768 - Fixation d'interconnexions servant à conduire le courant entre des composants distincts à l'intérieur du dispositif
H01L 23/522 - Dispositions pour conduire le courant électrique à l'intérieur du dispositif pendant son fonctionnement, d'un composant à un autre comprenant des interconnexions externes formées d'une structure multicouche de couches conductrices et isolantes inséparables du corps semi-conducteur sur lequel elles ont été déposées
Provided is a technology which makes it possible to prevent or reduce sticking of a substrate to a support. Provided is a technology having: a plurality of columns; a placement part on which a substrate provided to each column is placed; and a first opening configured so that a gas for preventing sticking due to film formation flows to a contact part in contact with the substrate.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
85.
Substrate Processing Apparatus, Method of Adjusting Electromagnetic Wave Shield, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium
It is possible to prevent a leakage of an electromagnetic wave. There is provided a technique that includes: a vessel in which a substrate is processed; a plasma generator including: an electrode provided on an outer periphery of the vessel; a power supply line connected to the electrode; and a supplier configured to supply a high frequency power to the electrode via the power supply line; a shield provided on an outer periphery of the electrode and configured to shield an electromagnetic wave emitted from the electrode; an opening provided at the shield, wherein the power supply line is inserted through the opening; a plurality of shielding structures provided to overlap with one another around the opening and around locations of the supplier facing the opening; and a controller configured to be capable of controlling the plasma generator to move relative to the shield.
A substrate processing apparatus includes: a processing module including a process container in which a substrate is processed and a substrate loading port installed at a front side of the processing module; and a utility system arranged behind the processing module. The utility system includes: a supply system that supplies a processing gas into the process container; a vacuum-exhauster arranged at a rearmost position in the utility system, and including a pump that exhausts an inside of the process container and a gantry that holds the pump in a vertical direction; and an exhaust system including an exhaust pipe that brings an exhaust port provided at a rear side of the process container into fluid communication with an intake port of the pump, and the gantry holds the pump at a predetermined height such that the intake port of the pump faces the exhaust port at a substantially same height.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
H04W 72/02 - Sélection de ressources sans fil par un utilisateur ou un terminal
H04W 72/0446 - Ressources du domaine temporel, p. ex. créneaux ou trames
H04W 72/0453 - Ressources du domaine fréquentiel, p. ex. porteuses dans des AMDF [FDMA]
H04W 72/20 - Canaux de commande ou signalisation pour la gestion des ressources
87.
SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING APPARATUS
The present invention etches a surface of a substrate by performing: (a) a step for filling a storage tank that is provided in a supply pipe of an etching gas or a storage section of the supply pipe with the etching gas and boosting the pressure of the etching gas; and (b) a step for supplying the etching gas boosted in the storage tank or the storage section to the substrate along the surface of the substrate from the outer edge of the substrate toward the inside of the surface.
The present disclosure provides a technology comprising: a gas supply pipe that supplies, to a processing chamber, a gas obtained by converting a raw material into a gaseous state; a container that is provided to the gas supply pipe and stores the raw material; a flow rate regulator that is provided to the gas supply pipe and regulates the flow rate of the gas; and a monitoring unit that is configured to be capable of monitoring whether or not the pressure in the container after a necessary pressure change due to vaporization of the raw material is within the operating pressure range of the flow rate regulator.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
89.
METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
There is provided a technique that includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a first reactant which reacts with a surface of the substrate to the substrate at a first partial pressure; and (b) after (a), exhausting a process space in which the substrate is processed such that a partial pressure of a reaction product, which is generated by a reaction between the surface of the substrate and the first reactant and present in the process space, becomes a second partial pressure, wherein (a) and (b) are performed such that the first partial pressure and the second partial pressure are set, respectively, to make a ratio of the second partial pressure to the first partial pressure be equal to or less than a predetermined partial pressure ratio.
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
90.
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
There is provided a technique that includes: at least one process chamber configured to be capable of processing a substrate; one or more supports configured to be capable of supporting the substrate; a transporter configured to be capable of transporting the one or more supports; a transfer chamber configured to be capable of transferring the substrate; a transport chamber that is adjacent to the transfer chamber and the at least one process chamber and is configured to be capable of moving the transporter; and a delivery chamber that is disposed in the transport chamber and is configured to be capable of delivering the one or more supports.
H01L 21/677 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le transport, p. ex. entre différents postes de travail
H01L 21/68 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le positionnement, l'orientation ou l'alignement
91.
SUBSTRATE PROCESSING APPARATUS, PLASMA GENERATING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
There is provided a technique that includes: a process chamber in which a substrate is processed; a plurality of first electrodes; a plurality of second electrodes; a high-frequency power supply configured to supply a high-frequency power; a high-frequency power application plate configured to connect the plurality of first electrodes to the high-frequency power supply; and a grounding plate configured to ground the plurality of second electrodes.
Provided is a technology that makes it possible to supply a specific gas at a low temperature. The present invention includes: a processing chamber in which a substrate is processed; and a furnace that includes a first supply unit that supplies a first processing gas to the substrate, a second supply unit that supplies a second processing gas to the substrate, a cooling unit that is provided at a side of the first supply unit opposite to the side on which the substrate is disposed and cools the first supply unit, and a heating unit that is provided at least at a side of the second supply unit opposite to the side on which the substrate is disposed and heats the second supply unit, the furnace being configured to cover the circumference of the processing chamber.
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
93.
PROCESSING SYSTEM, SUBSTRATE PROCESSING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM
[Problem] To provide technology capable of simplifying login to a substrate processing device and enhancing security. [Solution] This processing system includes an authentication device and a substrate processing device. The authentication device comprises: a first storage unit that stores biometric information of a user who operates the substrate processing device and user information of the user; a biometric information acquiring unit that acquires biometric information of the user; an authenticating unit that compares the acquired biometric information with the stored biometric information to authenticate the user; a position information acquiring unit that acquires position information of the position at which the biometric information of the user was acquired if the user was successfully authenticated by the authenticating unit; and a first communication unit that communicates with an external device. The substrate processing device comprises: a second storage unit that stores user information of a plurality of users who operate the substrate processing device and position information indicating a location where use is permitted; a second communication unit that communicates with the authentication device; a determining unit that receives the user information and the position information from the authentication device when the second communication unit becomes capable of communicating with the authentication device, and if the received user information matches any of the plurality of items of user information stored in the second storage unit, determines whether or not to permit the user to log in depending on whether or not the position information received from the authentication device and the position information stored in the second storage unit indicate the same location; and a control unit that is capable of controlling login on the basis of the determination result obtained by the determining unit.
A technique includes (a) preparing a substrate including a first region, which forms an outer surface of a recess and is adjacent to an opening of the recess and whose surface is terminated by a first termination, and a second region, which forms an inner surface of the recess and whose surface is terminated by the first termination; and (b) removing the first termination in the first region by exposing the substrate to a first processing solution containing a liquid that reacts with the first termination, so that a density of the first termination in the first region is smaller than a density of the first termination in the second region.
H01L 21/322 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour modifier leurs propriétés internes, p. ex. pour produire des défectuosités internes
H01L 21/02 - Fabrication ou traitement des dispositifs à semi-conducteurs ou de leurs parties constitutives
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
95.
CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
It is possible to suppress a deviation in an etching amount in a process chamber. There is provided a technique that includes: (a) supplying a first gas into a process chamber from one or more first positions in a first direction; and (b) supplying a second gas into the process chamber from one or more second positions in the first direction different from the one or more first positions, wherein the process chamber is configured to be capable of accommodating a substrate along a plane perpendicular to the first direction, the first gas is one of a cleaning gas and an additive gas reacting with the cleaning gas, and the second gas is the other one of the cleaning gas and the additive gas.
C23C 16/44 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
96.
SUBSTRATE PROCESSING APPARATUS, DETERMINATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
There is provided a technique that includes: a substrate processor processing a substrate; a gas supplier supplying, to the substrate processor, a gas that processes the substrate; an acquirer configured to perform the act of processing the substrate a predetermined number of times and acquire measurement values in a predetermined section during each act of processing the substrate; a determination condition setter configured to set a threshold for each of a plurality of predetermined determination items based on the measurement values acquired by the acquirer; and a determiner configured to, in the act of processing the substrate after the threshold is set, determine whether or not the acquired measurement values are within a range of the threshold for each of the plurality of predetermined determination items, and determine whether or not the act of processing the substrate is reproducible.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
97.
PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM
There is provided a technique that includes: (a) preparing a substrate including a nitrogen-containing film, which is formed to be thicker by a thickness T2 than a target thickness T1, and an oxide film on a surface of the substrate; and (b) etching the oxide film on the surface of the substrate using a substance X generated by supplying a fluorine-containing substance to the substrate and chemically reacting the nitrogen-containing film with the fluorine-containing substance.
The present invention performs: (a) a step for supplying a film-forming agent to a substrate which is disposed inside a processing chamber; (b) a step for purging the inside of the processing chamber under a first pressure; and (c) a step for purging the inside of the processing chamber under a second pressure which is higher than the first pressure.
H01L 21/205 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale en utilisant la réduction ou la décomposition d'un composé gazeux donnant un condensat solide, c.-à-d. un dépôt chimique
99.
SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING APPARATUS
According to the present invention, a film containing silicon and oxygen is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) a step for supplying a compound to the substrate, each molecule of the compound containing a silicon atom and an amino group bonded to the silicon atom, and containing an alkoxy group bonded to the silicon atom and/or a siloxane bond having the silicon atom; and (b) a step for supplying an excited reactant to the substrate, the reactant containing hydrogen or deuterium and not containing oxygen.
The present invention comprises: a) a step for supplying a processing gas to a substrate at a first pressure via a first gas supply system having a first storage part; b) a step for supplying the processing gas to the substrate at a second pressure, which is lower than the first pressure, via a second gas supply system having a second storage part; and c) a step for performing the step b) after the step a).
H01L 21/268 - Bombardement par des radiations ondulatoires ou corpusculaires par des radiations d'énergie élevée les radiations étant électromagnétiques, p. ex. des rayons laser
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
H01L 21/20 - Dépôt de matériaux semi-conducteurs sur un substrat, p. ex. croissance épitaxiale
H01L 21/31 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour former des couches isolantes en surface, p. ex. pour masquer ou en utilisant des techniques photolithographiquesPost-traitement de ces couchesEmploi de matériaux spécifiés pour ces couches
