Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/06 - Analyse de puissance ou optimisation de puissance
G06F 119/10 - Analyse du bruit ou optimisation du bruit
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
09 - Appareils et instruments scientifiques et électriques
Produits et services
Recorded computer software and hardware for use in
semiconductor design and manufacturing; downloadable
computer software and hardware for use in semiconductor
design and manufacturing.
3.
GEOMETRIC LOADING EFFECT CORRECTION FOR LITHOGRAPHY
A system may include a device configured to receive a plurality of patterns, each pattern in the plurality of patterns comprising a plurality of edges; a device configured to determine a neighborhood open area density for the plurality of patterns; and a device configured to determine a geometric loading effect correction (gLEC). The gLEC comprises a calculated offset from an edge in the plurality of edges, where the calculated offset is determined using the neighborhood open area density, and the determining the gLEC is performed offline. A system may also include a device configured to adjust the plurality of edges using the gLEC to counteract a loading effect, where the loading effect is a difference in an amount of etching that occurs based on the neighborhood open area density, forming an adjusted plurality of edges.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
09 - Appareils et instruments scientifiques et électriques
Produits et services
Recorded computer software and hardware for use in
semiconductor design and manufacturing; downloadable
computer software and hardware for use in semiconductor
design and manufacturing.
Some embodiments provide a method for decomposing a layout for a layer of an integrated circuit (IC) into two or more pattern layouts. The method receives, for the IC layer, a layout having multiple shapes representing a set of components that are to be manufactured on the IC layer. The method decomposes the layout into a first decomposition having a first set of two or more pattern layouts. The method identifies a set of violations in the layout when the first set of pattern layouts are used to manufacture the IC layer. The method computes a decomposition score for the first decomposition based on a size of an area of each identified violation. The method uses the computed score to decompose the layout into a second decomposition that has a second set of pattern layouts to use to manufacture the IC.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
6.
OPTIMIZATION OF DESIGN LAYOUT DECOMPOSITION USING MACHINE-TRAINED NETWORK
Some embodiments provide a method for decomposing a layout for a layer of an integrated circuit (IC) into two or more pattern layouts. The method receives a first decomposition of the layout of the IC layer. The first decomposition decomposes the layout into a first set of two or more pattern layouts. The method provides the first set of pattern layouts to a set of one or more machine-trained networks (MTNs) to identify a set of violations in the first set of pattern layouts. The set of violations is identified based on predicted manufactured shapes that are expected to be produced on the IC layer when the first set of pattern layouts is used to manufacture the IC. Based on the set of violations, the method decomposes the layout into a second decomposition, having a second set of pattern layouts, to use to manufacture the IC.
G06F 30/3308 - Vérification de la conception, p. ex. simulation fonctionnelle ou vérification du modèle par simulation
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
7.
CONTEXT-SENSITIVE IDENTIFICATION OF VIOLATIONS IN DESIGN LAYOUT COLORING
Some embodiments provide a method for decomposing a layout into two or more pattern layouts. The method receives, for an IC layer, a first decomposition of a layout. The layout includes shapes that in the first decomposition are individually assigned to at least one pattern layout of the first decomposition. The method identifies violations resulting from the first decomposition. A first set of shapes assigned to a first pattern layout is identified as resulting in a violation while a second set of shapes, assigned to a second pattern layout and having a same set of shapes in a same relative arrangement as the first set of shapes, is not identified as resulting in a violation. Based on the identified violations, the method defines a second decomposition of the layout in which at least two different shapes of the first set of shapes are assigned to different pattern layouts.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
8.
MULTI-LAYER ANALYSIS OF DESIGN LAYOUT DECOMPOSITIONS
Some embodiments provide a method for decomposing a layout for a first layer of an integrated circuit (IC) into pattern layouts. The method receives a first decomposition of the first IC layer design layout into a first set of two or more pattern layouts. The method generates predicted manufactured shapes for the first IC layer based on the received first decomposition. the method measures manufacturability of the first IC layer when the first IC layer uses the first decomposition based on alignment of the predicted manufactured shapes of the first IC layer with predicted manufactured shapes of at least a second IC layer. The method uses the measure of manufacturability to decompose the layout into a second decomposition that has a second set of pattern layouts to use to manufacture the IC.
Some embodiments provide a method for performing coloring for a design layout for an integrated circuit (IC) layer. The method receives a layout for the IC layer. The layout includes multiple features that represent IC components to be manufactured for the particular layer. The method generates a decomposition of the IC into multiple pattern layouts by using a machine-trained network (MTN) that outputs assignment of each layout feature to one of the pattern layouts. The method uses the pattern layouts for manufacturing the IC layer.
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
09 - Appareils et instruments scientifiques et électriques
Produits et services
Recorded computer software and hardware for use in semiconductor design and manufacturing; downloadable computer software and hardware for use in semiconductor design and manufacturing
11.
COMPUTING PARASITIC VALUES FOR SEMICONDUCTOR DESIGNS
Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/06 - Analyse de puissance ou optimisation de puissance
G06F 119/10 - Analyse du bruit ou optimisation du bruit
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
12.
Geometric loading effect correction for lithography
Methods and systems involve a plurality of patterns, each pattern in the plurality of patterns comprising a plurality of edges. Methods and systems also involve determining a neighborhood open area density for the plurality of patterns; determining a geometric loading effect correction, wherein the geometric loading effect correction comprises a calculated offset from an edge of a pattern in the plurality of patterns, and wherein the calculated offset is determined using the neighborhood open area density; and adjusting the edge of the pattern in the plurality of patterns using the geometric loading effect correction.
G03F 1/72 - Réparation ou correction des défauts dans un masque
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
09 - Appareils et instruments scientifiques et électriques
Produits et services
Recorded computer software and hardware for use in semiconductor design and manufacturing; downloadable computer software and hardware for use in semiconductor design and manufacturing
14.
COMPUTING PARASITIC VALUES FOR SEMICONDUCTOR DESIGNS
Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/06 - Analyse de puissance ou optimisation de puissance
G06F 119/10 - Analyse du bruit ou optimisation du bruit
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
15.
METHODS FOR MODELING OF A DESIGN IN RETICLE ENHANCEMENT TECHNOLOGY
A method for manufacturing a semiconductor chip involves generating exposure instructions from a Quantized Tone Mask (QTM) using charged particle beam technology, wherein the QTM is a 2-tone mask translated from a Continuous Tone Mask (CTM) using a cost function for mask value regularization.
G06F 30/39 - Conception de circuits au niveau physique
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/44 - Aspects liés au test ou à la mesure, p. ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
16.
COMPUTATION OF PARASITIC VALUES FOR INTERCONNECT SEGMENTS
Some embodiments provide a method for calculating parasitic parameters for an IC design layout including interconnects that traverse one or more interconnect layers and represent wires traversing one or more wiring layers of the IC. The method divides the design layout into tiles such that each interconnect of a set of the interconnects is divided into interconnect segments each of which is located in a respective tile. For a first interconnect segment located in a first tile, the method uses (i) a first computation technique to compute a first parasitic value representing a parasitic effect between the first interconnect segment and a second interconnect segment located in the first tile and (ii) a second, different computation technique to compute a second parasitic value representing a parasitic effect between the first interconnect segment and a third interconnect segment located in a second tile that is a neighbor of the first tile.
Some embodiments provide a method for calculating parasitic parameters for an IC design layout having interconnects that traverse multiple interconnect layers. The interconnects represent wires that traverse multiple wiring layers of the IC. The method divides the layout into 3D tiles such that each of a set of the interconnects is divided into multiple segments each of which is located in a 3D tile. Each 3D tile includes segments of a wiring layer. For a segment located in a particular 3D tile, the method computes parasitic values representing parasitic effects exerted on the segment by other segments in the particular 3D tile and a set of neighboring 3D tiles, including tiles with segments of the same wiring layer and tiles with segments of at least one other wiring layer. The method uses the set of parasitic values to determine parasitic effects exerted on an interconnect to which the segment belongs.
Some embodiments provide a method for calculating parasitics for an IC design layout that on at least one layer includes neighboring interconnects that are neither parallel nor perpendicular to each other. The method divides the layout into tiles such that each of a set of interconnects is divided into segments each of which is located in a respective tile. Each tile of a set of the tiles includes two or more segments that are neither parallel nor perpendicular. For each segment located in a tile, the method uses a parasitic value solver to compute a set of parasitic values representing parasitic effects exerted on the segment by a set of other segments in the tile and a set of neighboring tiles. For each interconnect, the method computes a set of overall parasitic values based on the parasitic values computed for the segments of the interconnect.
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
Some embodiments provide a method for calculating parasitic capacitance for an IC design layout. The method iteratively selects a core region and a plurality of halo regions neighboring the core region. For each interconnect segment located in the core, the method computes a halo capacitance value representing parasitic capacitance exerted on the interconnect segment by a particular neighboring segment in a particular neighboring halo region that depends on the particular neighboring segment in the particular neighboring halo region in addition to at least one additional neighboring interconnect segment in another halo region. To account for first and second interconnect segments in neighboring regions having different computed halo capacitance values with respect to each other, the method computes a single capacitance value from the first and second computed halo capacitance values and uses the single capacitance value to represent the parasitic capacitance exerted between the first and second interconnect segments.
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 17/11 - Opérations mathématiques complexes pour la résolution d'équations
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
Some embodiments provide a method calculating parasitic parameters for an IC design layout having interconnects that traverse multiple interconnect layers. The interconnects represent wires that traverse multiple wiring layers of the IC. The method analyzes congestion of interconnects in a layer of the design layout to identify at least a first region of the layer having a first density of interconnects and a second region of the layer having a second, greater density of interconnects. The method divides the design layout into multiple tiles such that each interconnect of a set of the interconnects is divided into multiple interconnect segments each of which is located in a respective tile. Tiles in the first region are larger than tiles in the second region to account for the different interconnect densities. The method computes parasitic values that express parasitic effects exerted on the interconnect segments on a per-tile basis.
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 17/11 - Opérations mathématiques complexes pour la résolution d'équations
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a substrate design, wherein a low-pass filter is applied to the substrate design to form a target wafer pattern. An initial mask pattern is determined from the target wafer pattern. An initial set of VSB shots is determined based on the initial mask pattern. A substrate pattern is calculated from a simulated mask pattern calculated with the initial set of VSB shots. The target wafer pattern is compared with the substrate pattern, and the initial set of VSB shots is adjusted until the substrate pattern and the target wafer pattern are within a predetermined tolerance. The adjusting of the initial set of VSB shots creates an adjusted set of VSB shots.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
22.
METHOD FOR COMPUTATIONAL METROLOGY AND INSPECTION FOR PATTERNS TO BE MANUFACTURED ON A SUBSTRATE
Systems for determining a scanner aerial image from a mask inspection image include a computer processor configured to receive the mask inspection image, wherein the mask inspection image has been generated by a mask inspection machine; and a computer processor configured to generate the scanner aerial image from the mask inspection image using a neural network. Systems include a computer processor configured to train a neural network with a set of images, such as with a simulated scanner aerial image and another image selected from a simulated mask inspection image, a simulated Critical Dimension Scanning Electron Microscope (CD-SEM) image, a simulated scanner emulator image and a simulated actinic mask inspection image.
Methods and systems incorporate variable side wall angle (VSA) into calculated patterns, using a mask 3D (M3D) effect. Aspects include determining the M3D effect, which may be performed using a neural network such as a multi-head UNet model. Determining the M3D effect may include determining the VSA. Aspects may include determining a VSA; calculating a calculated pattern on a substrate using the mask 3D effect; and modifying a mask exposure information based on the calculated pattern on the substrate.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
09 - Appareils et instruments scientifiques et électriques
42 - Services scientifiques, technologiques et industriels, recherche et conception
Produits et services
Computer software and hardware for use in semiconductor
design and manufacturing. Technical consulting services relating to semiconductor
design and manufacturing; custom calibration of deep
learning models for use in semiconductor design and
manufacturing.
Some embodiments provide a method for performing pixel-based rule checking on a layout that is used in a process for designing or manufacturing an integrated circuit. This pixel-based method provides an optimal approach for performing rule checks for layouts having shapes with curvilinear contours (i.e., with curvilinear edges). This method in some embodiments performs the rule check on a per pixel-basis that is optimal for curvilinear edges on which one or more pixels reside. In some embodiments, the layout is a mask layout used to manufacture the IC, while in other embodiments, the layout is a design layout used to design the IC (e.g., a layout used during the physical design process).
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
Some embodiments provide a method for performing pixel-based rule checking on a layout that is used in a process for designing or manufacturing an integrated circuit. This pixel-based method provides an optimal approach for performing rule checks for layouts having shapes with curvilinear contours (i.e., with curvilinear edges). This method in some embodiments performs the rule check on a per pixel-basis that is optimal for curvilinear edges on which one or more pixels reside. In some embodiments, the layout is a mask layout used to manufacture the IC, while in other embodiments, the layout is a design layout used to design the IC (e.g., a layout used during the physical design process).
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
Some embodiments provide a method for performing pixel-based rule checking on a layout that is used in a process for designing or manufacturing an integrated circuit. This pixel-based method provides an optimal approach for performing rule checks for layouts having shapes with curvilinear contours (i.e., with curvilinear edges). This method in some embodiments performs the rule check on a per pixel-basis that is optimal for curvilinear edges on which one or more pixels reside. In some embodiments, the layout is a mask layout used to manufacture the IC, while in other embodiments, the layout is a design layout used to design the IC (e.g., a layout used during the physical design process).
Some embodiments provide a method for performing pixel-based rule checking on a layout that is used in a process for designing or manufacturing an integrated circuit. This pixel-based method provides an optimal approach for performing rule checks for layouts having shapes with curvilinear contours (i.e., with curvilinear edges). This method in some embodiments performs the rule check on a per pixel-basis that is optimal for curvilinear edges on which one or more pixels reside. In some embodiments, the layout is a mask layout used to manufacture the IC, while in other embodiments, the layout is a design layout used to design the IC (e.g., a layout used during the physical design process).
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
Some embodiments provide a method for performing pixel-based rule checking on a layout that is used in a process for designing or manufacturing an integrated circuit. This pixel-based method provides an optimal approach for performing rule checks for layouts having shapes with curvilinear contours (i.e., with curvilinear edges). This method in some embodiments performs the rule check on a per pixel-basis that is optimal for curvilinear edges on which one or more pixels reside. In some embodiments, the layout is a mask layout used to manufacture the IC, while in other embodiments, the layout is a design layout used to design the IC (e.g., a layout used during the physical design process).
G05B 19/4097 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique caractérisée par l'utilisation de données de conception pour commander des machines à commande numérique [CN], p. ex. conception et fabrication assistées par ordinateur CFAO
09 - Appareils et instruments scientifiques et électriques
Produits et services
Recorded computer software and hardware for use in semiconductor design and manufacturing; downloadable computer software and hardware for use in semiconductor design and manufacturing
31.
MASK OPTIMIZATION PREFERENTIALLY ACCOUNTING FOR OVERLAP REGIONS
Some embodiments provide a method for optimizing a mask layout generated from a design layout of an IC. Based on an initial mask layout for a first layer, the method generates a simulated wafer image including shapes representing IC components of the layer, including a first component that has a relationship with a second component on a second layer of the design layout. The method identifies, in the simulated wafer image, (i) a first set of regions of a first shape of the first component that overlap with a second shape of the second component and (ii) a second set of regions of the first shape that do not overlap with the second shape. To improve overlap between the first shape's first set of regions and the second shape, the method modifies the initial mask layout to produce a modified mask layout.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
32.
MASK OPTIMIZATION FOR FIRST LAYER THAT ACCOUNTS FOR OTHER LAYERS
Some embodiments provide a method for optimizing a mask layout for producing masks that are used for manufacturing an integrated circuit (IC) comprising multiple layers of components. The method receives a mask layout including a set of mask images corresponding to a first layer of components of the IC that is adjacent to at least a second layer of components. The method generates a first wafer image including representations of IC components that are predicted to be manufactured for the first layer based on the received set of mask images corresponding to the first layer. Based on a positional relationship between at least one predicted IC component in the first wafer image and at least one predicted IC component in a second wafer image for the second layer, the method modifies at least one mask image in the set of mask images for the first layer.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
33.
ITERATIVE MASK OPTIMIZATION BIASED TOWARDS CRITICAL REGIONS OF LAYOUT
Some embodiments provide an iterative method for optimizing a mask layout for producing masks that are used for manufacturing an IC including multiple layers. Each iteration, the method generates a simulated wafer image including predicted manufactured shapes representing components for a layer based on a mask layout. Each iteration, the method compares the simulated wafer image to a target wafer image for the layer to determine whether the predicted manufactured shapes match corresponding shapes in the target wafer image. Each iteration, the method performs an inverse lithography operation to adjust mask shapes of the mask layout based on the comparison. The inverse lithography operation explores different mask layouts and is biased to select mask shapes that ensure that critical regions of the predicted manufactured shapes more perfectly match the corresponding target shapes at expense of less important regions of the predicted manufactured shapes failing to match the corresponding target shapes.
Some embodiments provide a method for modifying a mask layout for producing masks used to manufacture an IC. The method identifies a first set of mask images corresponding to a first layer and a second set of mask images corresponding to a second layer. The method formulates a problem that expresses correlation between desired shapes of IC components and predicted as-manufactured shapes of the IC components. The IC components include components on the first layer and vias on the second layer, each via connecting a first-layer component to a component on another layer. The method solves the problem by iteratively exploring modifications to both the first and second sets of mask images to identify modified sets of mask images that result in predicted as-manufactured shapes for the components on the first layer and the vias on the second layer that sufficiently correlate to the desired shapes of the IC components.
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
35.
VARIATION IN TAPER ANGLES OF PREDICTED MANUFACTURED SHAPES FOR PARASITICS EXTRACTION
Some embodiments provide a method for performing parasitic extraction. The method identifies a conductive circuit component on a layer of a design layout for an integrated circuit (IC). The first conductive circuit component (i) traverses within a plane defined for the layer and (ii) has a thickness orthogonal to the plane. The method identifies, for the conductive circuit component, a predicted manufactured three-dimensional (3-D) shape that tapers, in the direction orthogonal to the plane, by at least two different amounts at least two different locations along its traversal within the plane. The method uses the identified 3-D shape of the conductive circuit component to compute a parasitic effect that the conductive component experiences from a set of other conductive circuit components that neighbor the first conductive circuit component in the design layout.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
Some embodiments provide a method for performing parasitic extraction. The method identifies first and second conductive circuit components on a layer of a design layout for an integrated circuit (IC). The first and second conductive circuit components (i) traverse within a plane defined for the layer and (ii) have a thickness orthogonal to the plane. The method identifies, for each conductive circuit component, a predicted manufactured three-dimensional (3-D) shape of the conductive circuit component. At least one of the identified shapes tapers in the direction orthogonal to the plane. The method uses the identified 3-D shapes of the first and second conductive circuit components to compute a parasitic effect of the second conductive component on the first conductive component.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/06 - Analyse de puissance ou optimisation de puissance
37.
MASK OPTIMIZATION FOR LAYER ACCOUNTING FOR OVERLAP WITH OTHER LAYERS
Some embodiments provide a method for optimizing a mask layout generated from a design layout of an integrated circuit (IC). The method generates, based on a first mask layout, a simulated wafer image having predicted manufactured shapes representing IC components that are to be manufactured on a first layer of the IC. The method identifies a cross-sectional overlap between a first shape of a first IC component in the simulated wafer image and a second shape of a second IC component in a wafer image for a second layer of the IC. The first and second IC components are related components in the IC. Based on the cross-sectional overlap, the method modifies the first mask layout to generate a modified second mask layout for the first layer.
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
38.
MASK OPTIMIZATION FOR LAYER BASED ON COMPARISON OF COMPONENTS IN LAYER TO COMPONENTS IN OTHER LAYERS
Some embodiments provide a method for optimizing a mask layout for producing masks for manufacturing an integrated circuit (IC) by defining multiple layers of components on a substrate. The method generates, based on a first mask layout, a simulated wafer image including representations of IC components that are predicted to be manufactured for a first layer of the IC based on a received mask layout for the first layer. The method compares the simulated wafer image to a target wafer image including optimal representations of the IC components for the first layer. The comparison uses data regarding locations of components in at least one additional layer that interact with components in the first layer. Based on the comparison, the method modifies the first mask layout to generate a modified second mask layout for the first layer.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
39.
Mask optimization accounting for more critical and less critical overlap regions
Some embodiments provide a method for optimizing a mask layout generated from a design layout of an IC. Based on an initial mask layout for a first layer, the method generates a simulated wafer image including shapes representing components of the first layer, including a first component that overlaps with a second component on a second layer. The method identifies a more critical first region and a less critical second region of a first shape of the first component that both overlap with a second shape of the second component. The more critical first region is more important to ensuring overlap of the first shape with the second shape. To improve overlap between the first and second shapes, the method uses different costs for the more critical first region and the less critical second region to modify the initial mask layout to produce a modified mask layout.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
G03F 1/72 - Réparation ou correction des défauts dans un masque
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 30/367 - Vérification de la conception, p. ex. par simulation, programme de simulation avec emphase de circuit intégré [SPICE], méthodes directes ou de relaxation
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
G06F 119/22 - Analyse de rendement ou optimisation de rendement
40.
PARASITICS EXTRACTION BASED ON MULTIPLE MANUFACTURING PROCESS VARIATIONS
Some embodiments provide a method for performing parasitic extraction for a layer of a design layout of an integrated circuit (IC). The design layout includes a set of conductive circuit components that traverse within a plane defined for the layer. The method identifies, for a particular conductive circuit component, multiple different three-dimensional (3-D) shapes that have different variations in a direction orthogonal to the plane based on different sets of manufacturing process conditions. The method uses the different 3-D shapes to compute a set of parasitic values for the particular conductive circuit component that express parasitic effects affecting the particular conductive circuit component in the IC.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
Some embodiments provide q method for performing an EDA operation with respect to a circuit component that is defined on a layer of an EDA design layout. The layer is defined by (i) a plane defined along x- and y-axes and (ii) having a thickness along a z-axis. The method generates, for the circuit component, a two dimensional (2-D) shape that represents a predicted manufactured cross section of the component in the plane. The method uses (i) the 2-D shape and (ii) a taper angle that expresses a tapering amount of the component along the z-axis to perform a mathematical operation to generate a three dimensional (3-D) shape that represents a predicted manufactured 3-D shape of the component. The method performs an EDA operation for the circuit component using the generated 3-D second shape.
Some embodiments provide a method for performing an electronic design automation (EDA) operation with respect to a circuit component that is defined on a layer of an EDA design layout. The layer is defined by (i) a plane defined along x- and y-axes and (ii) a thickness along a z-axis. Based on the layer of the design layout, the method uses a wafer shape simulator to directly generate a predicted three dimensional (3-D) shape that represents a predicted manufactured shape of the component. The predicted 3-D shape has tapered sides that are offset from the z-axis based on a manufacturing process used to manufacture the circuit component that results in non-parallel sides of the component. The method performs an EDA operation for the circuit component using the generated 3-D shape.
Some embodiments provide a method for performing an electronic design automation (EDA) operation with respect to a circuit component that is defined on a layer of an EDA design layout. The layer is defined by (i) a plane defined along x- and y-axes and (ii) having a thickness along a z-axis. The method uses a wafer shape simulator to generate multiple two dimensional (2-D) shapes for the circuit component with each 2D shape representing a different predicted manufactured cross x-y section of the component at a different location along the z-axis. The method uses the 2-D shapes to generate, for the circuit component, a predicted-as-manufactured three dimensional (3-D) shape that deviates along the z-axis. The method performs an EDA operation for the circuit component using the predicted-as-manufactured 3-D shape.
Systems for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include a device configured to determine an initial mask pattern from a desired pattern for a substrate; a device configured to calculate a first substrate pattern from the initial mask pattern; a device configured to determine an initial set of VSB shots based on the initial mask pattern; a device configured to calculate a second substrate pattern from a simulated mask pattern calculated with the initial set of VSB shots; a device configured to compare the first substrate pattern with the second substrate pattern; and a device configured to adjust the initial set of VSB shots until the second substrate pattern and the first substrate pattern are within a predetermined tolerance, creating an adjusted set of VSB shots.
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
Methods for reticle enhancement technology include inputting a target wafer pattern, the target wafer pattern spanning an entire design area, and iterating a proposed mask for the entire design area until the proposed mask meets criteria towards producing the target wafer pattern. Each iteration includes calculating a predicted wafer pattern from the proposed mask. The calculating comprises calculating a cost and derivative data, the cost and the derivative data being based on comparing the predicted wafer pattern to the target wafer pattern. The cost further comprises specifications for mask manufacturability.
G06F 30/39 - Conception de circuits au niveau physique
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/44 - Aspects liés au test ou à la mesure, p. ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
48.
Methods and systems for reticle enhancement technology of a design pattern to be manufactured on a substrate
Methods and systems for fracturing a pattern to be exposed on a surface using variable shaped beam (VSB) lithography include inputting an initial pattern; calculating a first substrate pattern from the initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by a union of the initial pattern with locations on the grid; and merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots. The methods and systems also include calculating a calculated pattern to be exposed on the surface with the modified set of VSB shots; and calculating a second substrate pattern from the calculated pattern to be exposed on the surface.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
49.
Method and system for reticle enhancement technology
Methods incorporate variable side wall angle (VSA) into calculated patterns, using a mask 3D (M3D) effect. Embodiments include inputting a mask exposure information and determining the M3D effect. Determining the M3D effect may include determining the VSA. Embodiments may include calculating a VSA; and calculating a pattern on a substrate using the calculated VSA, wherein calculating the pattern on the substrate includes a mask 3D effect.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
50.
USING A MACHINE TRAINED NETWORK DURING ROUTING TO ACCOUNT FOR OPC COST
Some embodiments use a machine-trained network during routing to provide the router with sufficient information to improve the quality of routes generated by a router. This machine-trained network in some embodiments is referred to as the “digital twin” of a lengthy design and/or manufacturing process that produces the design of an IC layout and/or manufactures an IC based on a designed IC layout. The digital twin in some embodiments provides information regarding parasitics, regarding redundant vias for insertion or regarding complexity of subsequent manufacturing processes used to manufacture an IC based on the IC design layout.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
51.
MODELING OF A DESIGN IN RETICLE ENHANCEMENT TECHNOLOGY
Methods and systems for reticle enhancement technology (RET) include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. An optimized mask is calculated, wherein the optimized mask is generated by a first trained neural network using the target wafer patter. The calculating is performed for each tile in the plurality of tiles including its halo region.
G06F 30/39 - Conception de circuits au niveau physique
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/44 - Aspects liés au test ou à la mesure, p. ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
09 - Appareils et instruments scientifiques et électriques
Produits et services
Recorded computer software and hardware for use in
semiconductor design and manufacturing; downloadable
computer software and hardware for use in semiconductor
design and manufacturing.
53.
Method and system for determining a charged particle beam exposure for a local pattern density
Methods and systems for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose may be calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.
H01J 37/302 - Commande des tubes par une information d'origine externe, p. ex. commande par programme
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
54.
USING MACHINE TRAINED NETWORK DURING ROUTING TO PERFORM PARASITIC EXTRACTION FOR AN IC DESIGN
Some embodiments use a machine-trained network during routing to provide the router with sufficient information to improve the quality of routes generated by a router. This machine-trained network in some embodiments is referred to as the “digital twin” of a lengthy design and/or manufacturing process that produces the design of an IC layout and/or manufactures an IC based on a designed IC layout. The digital twin in some embodiments provides information regarding parasitics, regarding redundant vias for insertion or regarding complexity of subsequent manufacturing processes used to manufacture an IC based on the IC design layout.
Some embodiments use a machine-trained network during routing to provide the router with sufficient information to improve the quality of routes generated by a router. This machine-trained network in some embodiments is referred to as the “digital twin” of a lengthy design and/or manufacturing process that produces the design of an IC layout and/or manufactures an IC based on a designed IC layout. The digital twin in some embodiments provides information regarding parasitics, regarding redundant vias for insertion or regarding complexity of subsequent manufacturing processes used to manufacture an IC based on the IC design layout.
A method for performing pixel-based design rule checking (DRC) is described. This method is used to perform design rule checks for rectilinear and curvilinear designs. In some embodiments, the pixel-based approach is based on computational deep-learning. The pixel-based DRC method of some embodiments is more resilient to false positives than traditional geometric approaches, particularly for designs with curvilinear content, and the inference time remains constant, regardless of how many shapes exist in the design being checked, or how many polygon edges are needed to represent its curvature. The DRC method of some embodiments is implemented by highly parallel architectures (such as Graphics Processing Units (GPU) and Tensor Processing Units (TPU)) to improve processing throughput compared to traditional means.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
57.
USING MACHINE TRAINED NETWORK DURING ROUTING TO MODIFY LOCATIONS OF VIAS IN AN IC DESIGN
Some embodiments use a machine-trained network during routing to provide the router with sufficient information to improve the quality of routes generated by a router. This machine-trained network in some embodiments is referred to as the “digital twin” of a lengthy design and/or manufacturing process that produces the design of an IC layout and/or manufactures an IC based on a designed IC layout. The digital twin in some embodiments provides information regarding parasitics, regarding redundant vias for insertion or regarding complexity of subsequent manufacturing processes used to manufacture an IC based on the IC design layout.
Some embodiments use a machine-trained network during routing to provide the router with sufficient information to improve the quality of routes generated by a router. This machine-trained network in some embodiments is referred to as the “digital twin” of a lengthy design and/or manufacturing process that produces the design of an IC layout and/or manufactures an IC based on a designed IC layout. The digital twin in some embodiments provides information regarding parasitics, regarding redundant vias for insertion or regarding complexity of subsequent manufacturing processes used to manufacture an IC based on the IC design layout.
Some embodiments use a machine-trained network during routing to provide the router with sufficient information to improve the quality of routes generated by a router. This machine-trained network in some embodiments is referred to as the “digital twin” of a lengthy design and/or manufacturing process that produces the design of an IC layout and/or manufactures an IC based on a designed IC layout. The digital twin in some embodiments provides information regarding parasitics, regarding redundant vias for insertion or regarding complexity of subsequent manufacturing processes used to manufacture an IC based on the IC design layout.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
60.
USING TOPOLOGICAL AND GEOMETRIC ROUTERS TO PRODUCE CURVILINEAR ROUTES
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
Methods for fracturing a pattern to be exposed on a surface using variable shaped beam (VSB) lithography include inputting an initial pattern; calculating a first substrate pattern from the initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by a union of the initial pattern with locations on the grid; and merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots. The method also includes calculating a calculated pattern to be exposed on the surface with the modified set of VSB shots; and calculating a second substrate pattern from the calculated pattern to be exposed on the surface.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
62.
Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include determining an initial mask pattern from a desired pattern for a substrate; calculating a first substrate pattern from the initial mask pattern; determining an initial set of VSB shots that will form the initial mask pattern; calculating a simulated mask pattern from the initial set of VSB shots; calculating a second substrate pattern from the simulated mask pattern; and adjusting the initial set of VSB shots, wherein the adjusting of the initial set of VSB shots creates an adjusted set of VSB shots.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
63.
INTEGRATED CIRCUIT WITH NON-PREFERRED DIRECTION CURVILINEAR WIRING
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
H01L 27/02 - Dispositifs consistant en une pluralité de composants semi-conducteurs ou d'autres composants à l'état solide formés dans ou sur un substrat commun comprenant des éléments de circuit passif intégrés avec au moins une barrière de potentiel ou une barrière de surface
64.
Routing non-preferred direction wiring layers of an integrated circuit by minimizing vias between these layers
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
Some embodiments of the invention provide an integrated circuit (IC) that has a novel non-preferred direction (NPD) wiring architecture. In some embodiments, the IC includes a substrate and multiple wiring layers, which include a first set of one or more wiring layers with no preferred wiring directions, and a second set of one or more wiring layers with preferred wiring directions. In some embodiments, the first set of wiring layers includes the third and fourth wiring layers, while the second set of wiring layers includes the fifth and higher metal layers with successive neighboring layers having different (e.g., alternating) preferred wiring directions. The first set of wiring layers in other embodiments includes the third wiring layer but not the fourth wiring layer, which in these embodiments has a preferred wiring direction.
A method for performing pixel-based design rule checking (DRC) is described. This method is used to perform design rule checks for rectilinear and curvilinear designs. In some embodiments, the pixel-based approach is based on computational deep-learning. The pixel-based DRC method of some embodiments is more resilient to false positives than traditional geometric approaches, particularly for designs with curvilinear content, and the inference time remains constant, regardless of how many shapes exist in the design being checked, or how many polygon edges are needed to represent its curvature. The DRC method of some embodiments is implemented by highly parallel architectures (such as Graphics Processing Units (GPU) and Tensor Processing Units (TPU)) to improve processing throughput compared to traditional means.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
73.
Method and system for reticle enhancement technology
Methods incorporate variable side wall angle (VSA) into calculated patterns, using a mask 3D (M3D) effect. Embodiments include inputting a mask exposure information, calculating a mask 2D (M2D) effect from the mask exposure information, and determining the M3D effect from the M2D effect. Determining the M3D effect may include determining the VSA, such as by using a neural network. Embodiments may include determining a dose margin from mask exposure information; calculating a VSA using the dose margin; and calculating a pattern on a substrate using the calculated VSA, wherein calculating the pattern on the substrate includes a mask 3D effect.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/22 - Masques ou masques vierges d'imagerie par rayonnement d'une longueur d'onde de 100 nm ou moins, p. ex. masques pour rayons X, masques en extrême ultra violet [EUV]Leur préparation
74.
Computing and displaying a predicted overlap shape in an IC design based on predicted manufacturing contours
Some embodiments provide a method for computing and displaying of minimum overlap for semiconductor layer interfaces, such as metal-via and metal-contact. The method leverages a machine-trained network (e.g., a trained neural network) to quickly, but accurately, infer the contours for the manufactured shapes across a range of process variations. The method also models the semiconductor process manufacturing layer-to-layer misalignment. The combined set of information (from the machine-trained network and from the modeling) is used by the method to compute the minimum overlap shapes at multiple layer interfaces. The method in some embodiments then uses the minimum overlap shapes to obtain an accurate calculation of the via or contact resistance.
G06F 30/31 - Saisie informatique, p. ex. éditeurs spécifiquement adaptés à la conception de circuits
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
Some embodiments provide a method for computing and displaying of minimum overlap for semiconductor layer interfaces, such as metal-via and metal-contact. The method leverages a machine-trained network (e.g., a trained neural network) to quickly, but accurately, infer the contours for the manufactured shapes across a range of process variations. The method also models the semiconductor process manufacturing layer-to-layer misalignment. The combined set of information (from the machine-trained network and from the modeling) is used by the method to compute the minimum overlap shapes at multiple layer interfaces. The method in some embodiments then uses the minimum overlap shapes to obtain an accurate calculation of the via or contact resistance.
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/31 - Saisie informatique, p. ex. éditeurs spécifiquement adaptés à la conception de circuits
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
Some embodiments provide a method for computing and displaying of minimum overlap for semiconductor layer interfaces, such as metal-via and metal-contact. The method leverages a machine-trained network (e.g., a trained neural network) to quickly, but accurately, infer the contours for the manufactured shapes across a range of process variations. The method also models the semiconductor process manufacturing layer-to-layer misalignment. The combined set of information (from the machine-trained network and from the modeling) is used by the method to compute the minimum overlap shapes at multiple layer interfaces. The method in some embodiments then uses the minimum overlap shapes to obtain an accurate calculation of the via or contact resistance.
G06F 30/31 - Saisie informatique, p. ex. éditeurs spécifiquement adaptés à la conception de circuits
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information including the dosages for the plurality of pixels in the area. An increase in dosage for at least one pixel in a plurality of pixels in the sub area is determined, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area.
Methods for reticle enhancement technology include representing a target wafer pattern or a predicted wafer pattern as a smooth function captured as a function sample array (FSA). The FSA is an array of sampled values of the smooth function, which is a continuous differentiable function. Methods also include providing a continuous tone mask (CTM), wherein the CTM is used to produce the predicted wafer pattern, the predicted wafer pattern spanning an entire design area.
G06F 30/39 - Conception de circuits au niveau physique
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/44 - Aspects liés au test ou à la mesure, p. ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
79.
Computing and displaying a predicted overlap shape in an IC design based on predicted misalignment of metal layers
Some embodiments provide a method for computing and displaying of minimum overlap for semiconductor layer interfaces, such as metal-via and metal-contact. The method leverages a machine-trained network (e.g., a trained neural network) to quickly, but accurately, infer the contours for the manufactured shapes across a range of process variations. The method also models the semiconductor process manufacturing layer-to-layer misalignment. The combined set of information (from the machine-trained network and from the modeling) is used by the method to compute the minimum overlap shapes at multiple layer interfaces. The method in some embodiments then uses the minimum overlap shapes to obtain an accurate calculation of the via or contact resistance.
G06F 30/31 - Saisie informatique, p. ex. éditeurs spécifiquement adaptés à la conception de circuits
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
80.
Computing parasitic values for semiconductor designs
Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/06 - Analyse de puissance ou optimisation de puissance
G06F 119/10 - Analyse du bruit ou optimisation du bruit
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
81.
BASED ON MULTIPLE MANUFACTURING PROCESS VARIATIONS, PRODUCING MULTIPLE CONTOURS REPRESENTING PREDICTED SHAPES OF AN IC DESIGN COMPONENT
A method for manufacturing-aware editing of circuit layouts driven by predictions regarding predicted manufactured wafer contours generated by a machine-trained network. The method allows for fast edit loops in interactive editing timeframes, in which the predicted manufactured wafer contours corresponding to design edits are presented within seconds of the edits themselves. In some embodiments, the wafer contours take mask OPC/ILT and lithography effects into account, as determined by the machine trained network.
G05B 19/4097 - Commande numérique [CN], c.-à-d. machines fonctionnant automatiquement, en particulier machines-outils, p. ex. dans un milieu de fabrication industriel, afin d'effectuer un positionnement, un mouvement ou des actions coordonnées au moyen de données d'un programme sous forme numérique caractérisée par l'utilisation de données de conception pour commander des machines à commande numérique [CN], p. ex. conception et fabrication assistées par ordinateur CFAO
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
82.
Leveraging concurrency to improve interactivity with an EDA tool
A method for manufacturing-aware editing of circuit layouts driven by predictions regarding predicted manufactured wafer contours generated by a machine-trained network. The method allows for fast edit loops in interactive editing timeframes, in which the predicted manufactured wafer contours corresponding to design edits are presented within seconds of the edits themselves. In some embodiments, the wafer contours take mask OPC/ILT and lithography effects into account, as determined by the machine trained network.
G06F 30/31 - Saisie informatique, p. ex. éditeurs spécifiquement adaptés à la conception de circuits
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
A method for manufacturing-aware editing of circuit layouts driven by predictions regarding predicted manufactured wafer contours generated by a machine-trained network. The method allows for fast edit loops in interactive editing timeframes, in which the predicted manufactured wafer contours corresponding to design edits are presented within seconds of the edits themselves. In some embodiments, the wafer contours take mask OPC/ILT and lithography effects into account, as determined by the machine trained network.
A method for manufacturing-aware editing of circuit layouts driven by predictions regarding predicted manufactured wafer contours generated by a machine-trained network. The method allows for fast edit loops in interactive editing timeframes, in which the predicted manufactured wafer contours corresponding to design edits are presented within seconds of the edits themselves. In some embodiments, the wafer contours take mask OPC/ILT and lithography effects into account, as determined by the machine trained network.
G06F 30/31 - Saisie informatique, p. ex. éditeurs spécifiquement adaptés à la conception de circuits
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
09 - Appareils et instruments scientifiques et électriques
Produits et services
Recorded computer software and hardware for use in semiconductor design and manufacturing; downloadable computer software and hardware for use in semiconductor design and manufacturing
86.
Method and system for determining a charged particle beam exposure for a local pattern density
Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose is calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.
H01J 37/302 - Commande des tubes par une information d'origine externe, p. ex. commande par programme
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
87.
USING A MACHINE-TRAINED NETWORK TO PERFORM PHYSICAL DESIGN
A method of some embodiments receives an initial first physical design of a circuit. The method uses a machine-trained network to generate a second physical design that is a prediction of how the first physical design will look at a subsequent manufacturing stage. The method then uses the second physical design to modify the first physical design. Examples of such modifications include modifying a set of one or more routes in the first physical design and/or modifying a set of placement locations of a set of one or more sub-circuits or circuit components defined in the first physical design.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 30/12 - CAO géométrique caractérisée par des moyens d’entrée spécialement adaptés à la CAO, p. ex. interfaces utilisateur graphiques [UIG] spécialement adaptées à la CAO
88.
Method for computational metrology and inspection for patterns to be manufactured on a substrate
Methods include generating a scanner aerial image using a neural network, where the scanner aerial image is generated using a mask inspection image that has been generated by a mask inspection machine. Embodiments also include training the neural network with a set of images, such as with a simulated scanner aerial image and another image selected from a simulated mask inspection image, a simulated Critical Dimension Scanning Electron Microscope (CD-SEM) image, a simulated scanner emulator image and a simulated actinic mask inspection image.
Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
90.
Computing parasitic values for semiconductor designs
Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/06 - Analyse de puissance ou optimisation de puissance
G06F 119/10 - Analyse du bruit ou optimisation du bruit
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
91.
Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
G03F 1/74 - Réparation ou correction des défauts dans un masque par un faisceau de particules chargées [CPB charged particle beam], p. ex. réparation ou correction de défauts par un faisceau d'ions focalisé
G03F 1/78 - Création des motifs d'un masque par imagerie par un faisceau de particules chargées [CPB charged particle beam], p. ex. création des motifs d'un masque par un faisceau d'électrons
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
92.
Computing parasitic values for semiconductor designs
Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/06 - Analyse de puissance ou optimisation de puissance
G06F 119/10 - Analyse du bruit ou optimisation du bruit
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
93.
Methods and systems to determine parasitics for semiconductor or flat panel display fabrication
Some embodiments provide a method for calculating parasitic parameters for a pattern to be manufactured on an integrated circuit (IC) substrate. The method receives a definition of a wire structure as input. The method rasterizes the wire structure (e.g., produces pixel-based definition of the wire structure) to produce several images. Before rasterizing the wire structure, the method in some embodiments decomposes the wire structure into several components (e.g., several wires, wire segments or wire structure portions), which it then individually rasterizes. The method then uses the images as inputs to a neural network, which then calculates parasitic parameters associated with the wire structure. In some embodiments, the parasitic parameters include unwanted parasitic capacitance effects exerted on the wire structure. Conjunctively, or alternatively, these parameters include unwanted parasitic resistance and/or inductance effects on the wire structure.
G06F 30/27 - Optimisation, vérification ou simulation de l’objet conçu utilisant l’apprentissage automatique, p. ex. l’intelligence artificielle, les réseaux neuronaux, les machines à support de vecteur [MSV] ou l’apprentissage d’un modèle
G06F 30/392 - Conception de plans ou d’agencements, p. ex. partitionnement ou positionnement
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06F 119/06 - Analyse de puissance ou optimisation de puissance
G06F 119/10 - Analyse du bruit ou optimisation du bruit
H10D 86/40 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT]
H10D 86/60 - Dispositifs intégrés formés dans ou sur des substrats isolants ou conducteurs, p. ex. formés dans des substrats de silicium sur isolant [SOI] ou sur des substrats en acier inoxydable ou en verre caractérisés par de multiples transistors en couches minces [TFT] les transistors TFT étant dans des matrices actives
H10D 89/60 - Dispositifs intégrés comprenant des dispositions pour la protection électrique ou thermique, p. ex. circuits de protection contre les décharges électrostatiques [ESD].
94.
Methods for modeling of a design in reticle enhancement technology
Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.
G03F 1/44 - Aspects liés au test ou à la mesure, p. ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
95.
Methods and systems to determine shapes for semiconductor or flat panel display fabrication
Methods for calculating a pattern to be manufactured on a substrate include inputting a physical design pattern, determining a plurality of possible neighborhoods for the physical design pattern, generating a plurality of possible mask designs for the physical design pattern, calculating a plurality of possible patterns on the substrate, calculating a variation band from the plurality of possible patterns, and modifying the physical design pattern to reduce the variation band. Embodiments also include inputting a set of parameters for a neural network to calculate a pattern to be manufactured on a substrate, calculating a plurality of patterns to be manufactured on the substrate for the physical design in each possible neighborhood of the plurality of possible neighborhoods, training the neural network with the calculated plurality of patterns, and adjusting the set of parameters to reduce the manufacturing variation for the calculated plurality of patterns to be manufactured on a substrate.
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 7/00 - Production par voie photomécanique, p. ex. photolithographique, de surfaces texturées, p. ex. surfaces impriméesMatériaux à cet effet, p. ex. comportant des photoréservesAppareillages spécialement adaptés à cet effet
G06F 30/398 - Vérification ou optimisation de la conception, p. ex. par vérification des règles de conception [DRC], vérification de correspondance entre géométrie et schéma [LVS] ou par les méthodes à éléments finis [MEF]
G06N 3/04 - Architecture, p. ex. topologie d'interconnexion
Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area of the desired shape based on an original set of exposure information. A backscatter for a sub area is calculated, based on the original set of exposure information. Dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A pre-PEC maximum dose is determined for the local pattern density, based on a pre-determined target post-PEC maximum dose. The original set of exposure information is modified with the pre-PEC maximum dose and the increased dosage of the at least one pixel in the sub area to create a modified set of exposure information.
H01J 37/302 - Commande des tubes par une information d'origine externe, p. ex. commande par programme
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.
Methods for iteratively optimizing a two-dimensioned tiled area such as a lithographic mask include determining a halo area around each tile in the tiled area. An extended tile is made of a tile and a halo area. Each extended tile in the tiled area is iterated until a criterion is satisfied or a maximum number of iterations is met. Optimizing the extended tile produces a pattern for the tile such that at a perimeter of the tile, the pattern matches adjacent patterns that are calculated at perimeters of adjacent tiles.
G03F 1/44 - Aspects liés au test ou à la mesure, p. ex. motifs de grille, contrôleurs de focus, échelles en dents de scie ou échelles à encoches
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G06F 119/18 - Analyse de fabricabilité ou optimisation de fabricabilité
99.
Method and system of reducing charged particle beam write time
A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.
A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes determining a local pattern density for the area of the pattern based on an original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PLC maximum dose.
H01J 37/302 - Commande des tubes par une information d'origine externe, p. ex. commande par programme
H01J 37/317 - Tubes à faisceau électronique ou ionique destinés aux traitements localisés d'objets pour modifier les propriétés des objets ou pour leur appliquer des revêtements en couche mince, p. ex. implantation d'ions
G03F 1/36 - Masques à correction d'effets de proximitéLeur préparation, p. ex. procédés de conception à correction d'effets de proximité [OPC optical proximity correction]
G03F 1/70 - Adaptation du tracé ou de la conception de base du masque aux exigences du procédé lithographique, p. ex. correction par deuxième itération d'un motif de masque pour l'imagerie
