Versatile temperature control systems adaptable to many different applications employ different states and proportions of a pressurized dual phase medium in direct contact with a thermal load. In one aspect of the invention, thermal energy generated by pressurization of a gaseous medium is stored at a selected temperature level so that it is later readily accessible. In addition, in accordance with the invention temperature control of a two-phase medium can be exercised across selectable dynamic ranges and with different resolutions. In accordance with such features, the control can be exerted by varying the input flow rate of a mixture applied to a thermal load, or by controlling the back pressure of the flow through the thermal load.
In accordance with another feature of the invention, substantial energy conservation can be effected by employing an ambient temperature evaporator configuration between the thermal load and the input to the compressor. This variant also utilizes the two-phase characteristics of the medium. Moreover, the system can be configured compactly utilizing a thermal reservoir for retaining thermal energy for special purposes. In a food processing system for providing a frozen product, for example, the thermal reservoir can be accessed to utilize the refrigerant itself in different operating modes, such as rapid heating and system cleansing. In the food processing application, target temperatures can be set and maintained on a platen which is to receive food ingredients using energy flows at two different enthalpies, to enable rapid freezing or temperature elevation.
F25B 5/04 - Machines, installations ou systèmes à compression, avec plusieurs circuits d'évaporateurs, p. ex. pour faire varier la puissance frigorifique disposés en série
F25B 40/00 - Sous-refroidisseurs, désurchauffeurs ou surchauffeurs
F25B 41/39 - Dispositions avec plusieurs moyens de détente disposés en série, c.-à-d. détente à plusieurs étages, sur une ligne de réfrigérant menant au même évaporateur
2.
Method and apparatus for thermal exchange with two-phase media
In a temperature control system using a controlled mix of high temperature pressurized gas and a cooled vapor/liquid flow of the same medium to cool a thermal load to a target temperature in a high energy environment, particular advantages are obtained in precision and efficiency by passing at least a substantial percentage of the cooled vapor/liquid flow through the thermal load directly, and thereafter mixing the output with a portion of the pressurized gas flow. This “post load mixing” approach increases the thermal transfer coefficient, improves control and facilities target temperature change. Ad added mixing between the cooled expanded flow and a lesser flow of pressurized gas also is used prior to the input to the thermal load. A further feature, termed a remote “Line Box”, enables transport of the separate flows of the two phase medium through a substantial spacing from pressurizing and condensing units without undesired liquefaction in the transport lines.
A temperature control system is disclosed where thermal energy generated by pressurization of a gaseous medium is stored at a selected temperature level so that it is later readily accessible. Temperature control of a two-phase medium is exercised across selectable dynamic ranges and with different resolutions and the control can be exerted by varying the input flow rate of a mixture applied to a thermal load, or by controlling the back pressure of the flow through the thermal load.
A23G 9/22 - Détails, éléments constitutifs ou accessoires d'appareils dans la mesure où ils ne sont pas spécifiques à un seul des groupes précédents
F25B 5/04 - Machines, installations ou systèmes à compression, avec plusieurs circuits d'évaporateurs, p. ex. pour faire varier la puissance frigorifique disposés en série
F25B 40/00 - Sous-refroidisseurs, désurchauffeurs ou surchauffeurs
Versatile temperature control systems adaptable to many different applications employ different states and proportions of a pressurized dual phase medium in direct contact with a thermal load. In one aspect of the invention, thermal energy generated by pressurization of a gaseous medium is stored at a selected temperature level so that it is later readily accessible. In addition, in accordance with the invention temperature control of a two-phase medium can be exercised across selectable dynamic ranges and with different resolutions. In accordance with such features, the control can be exerted by varying the input flow rate of a mixture applied to a thermal load, or by controlling the back pressure of the flow through the thermal load.
In accordance with another feature of the invention, substantial energy conservation can be effected by employing an ambient temperature evaporator configuration between the thermal load and the input to the compressor. This variant also utilizes the two-phase characteristics of the medium. Moreover, the system can be configured compactly utilizing a thermal reservoir for retaining thermal energy for special purposes. In a food processing system for providing a frozen product, for example, the thermal reservoir can be accessed to utilize the refrigerant itself in different operating modes, such as rapid heating and system cleansing. In the food processing application, target temperatures can be set and maintained on a platen which is to receive food ingredients using energy flows at two different enthalpies, to enable rapid freezing or temperature elevation.
In a temperature control system using a controlled mix of high temperature pressurized gas and a cooled vapor/liquid flow of the same medium to cool a thermal load to a target temperature in a high energy environment, particular advantages are obtained in precision and efficiency by passing at least a substantial percentage of the cooled vapor/liquid flow through the thermal load directly, and thereafter mixing the output with a portion of the pressurized gas flow. This “post load mixing” approach increases the thermal transfer coefficient, improves control and facilities target temperature change. Ad added mixing between the cooled expanded flow and a lesser flow of pressurized gas also is used prior to the input to the thermal load. A further feature, termed a remote “Line Box”, enables transport of the separate flows of the two phase medium through a substantial spacing from pressurizing and condensing units without undesired liquefaction in the transport lines.
G05D 11/16 - Commande du rapport du mélange de fluides ayant des températures différentes, p. ex. en déterminant la température d'un mélange de fluides ayant des viscosités différentes
A temperature control system employing a two-phase refrigerant and a compressor/condenser loop is disclosed wherein a two phase refrigerant condenses within the load, the system including a thermo-expansion valve that simultaneously allows refrigerant flow through the thermo-expansion valve and regulates a temperature of the refrigerant in its two phase state ahead of the thermo-expansion valve, and wherein a flow through the thermo-expansion valve occurs only after a pressure and temperature upstream of the thermo-expansion valve reaches a final temperature and pressure.
A temperature control system employing a two-phase refrigerant and a compressor/condenser loop is disclosed wherein a two phase refrigerant condenses within the load, the system including a thermo-expansion valve that simultaneously allows refrigerant flow through the thermo-expansion valve and regulates a temperature of the refrigerant in its two phase state ahead of the thermo-expansion valve, and wherein a flow through the thermo-expansion valve occurs only after a pressure and temperature upstream of the thermo-expansion valve reaches a final temperature and pressure.
A system and method for controlling cooling of a thermal load having different cooling requirements in different sections based on direct thermal exchange using a two-phase refrigerant employs the pressure/temperature characteristics of the refrigerant to particular benefit for this multi-level cooling system. The two-phase refrigerant is first adjusted to have temperature/enthalpy characteristics chosen as the starting level for different cooling demands at related temperatures. After appropriate generation of a mixture of two-phase refrigerant initial reference temperature and pressure are established. Thereafter, incremental changes in the comprising hot gas and expanded cooled liquid/vapor, an temperature cooling medium area made by lowering the pressure by predetermined amounts, or alternatively by bypassing the pressure drop and proceeding to the next stage.
F25D 13/04 - Dispositifs fixes associés à des machines frigorifiques, p. ex. chambres froides avec plusieurs compartiments de refroidissement, p. ex. casiers frigorifiques les compartiments étant à des températures différentes
9.
Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
A method of controlling wafer temperature in a plasma reactor by obtaining the next scheduled change in RF heat load on the workpiece, and using thermal modeling to estimate respective changes in wafer backside gas pressure and in coolant flow through a wafer support pedestal that would compensate for the next scheduled change in RF heat load, and making the respective changes in the backside gas pressure or in the coolant flow prior to the time of the next scheduled change.
A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using the model to estimate a change in thermal conditions of the coolant in the evaporator that would hold the temperature nearly constant by compensating for the next scheduled change in RF heat load, and making the change in thermal conditions of the coolant in the evaporator prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.
H01L 21/302 - Traitement des corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer leurs caractéristiques physiques de surface ou leur forme, p. ex. gravure, polissage, découpage
H01L 21/461 - Traitement de corps semi-conducteurs en utilisant des procédés ou des appareils non couverts par les groupes pour changer les caractéristiques physiques ou la forme de leur surface, p. ex. gravure, polissage, découpage
11.
Plasma reactor with a multiple zone thermal control feed forward control apparatus
A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
H01L 21/67 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants
H01L 21/683 - Appareils spécialement adaptés pour la manipulation des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide pendant leur fabrication ou leur traitementAppareils spécialement adaptés pour la manipulation des plaquettes pendant la fabrication ou le traitement des dispositifs à semi-conducteurs ou des dispositifs électriques à l'état solide ou de leurs composants pour le maintien ou la préhension
H01J 37/32 - Tubes à décharge en atmosphère gazeuse
F25B 49/02 - Disposition ou montage des dispositifs de commande ou de sécurité pour machines, installations ou systèmes du type à compression
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
C23C 16/50 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques
C23C 16/503 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à courant continu ou alternatif
C23C 16/52 - Commande ou régulation du processus de dépôt
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
H05H 1/46 - Production du plasma utilisant des champs électromagnétiques appliqués, p. ex. de l'énergie à haute fréquence ou sous forme de micro-ondes
12.
Method and apparatus for thermal exchange with two-phase media
In a temperature control system using a controlled mix of high temperature pressurized gas and a cooled vapor/liquid flow of the same medium to cool a thermal load to a target temperature in a high energy environment, particular advantages are obtained in precision and efficiency by passing at least a substantial percentage of the cooled vapor/liquid flow through the thermal load directly, and thereafter mixing the output with a portion of the pressurized gas flow. This “post load mixing” approach increases the thermal transfer coefficient, improves control and facilities target temperature change. Ad added mixing between the cooled expanded flow and a lesser flow of pressurized gas also is used prior to the input to the thermal load. A further feature, termed a remote “Line Box”, enables transport of the separate flows of the two phase medium through a substantial spacing from pressurizing and condensing units without undesired liquefaction in the transport lines.
G05D 11/16 - Commande du rapport du mélange de fluides ayant des températures différentes, p. ex. en déterminant la température d'un mélange de fluides ayant des viscosités différentes
In a thermal control system of the type employing a two phase refrigerant that is first compressed and then is divided into a variable mass flow of refrigerant into a hot pressurized gas form and a differential remainder flow of cooled vapor derived from condensation and then thermal expansion, transitions between different temperature levels are enhanced by incremental variations of the mass flow at different control rates.
A system (110) for improving the thermal efficiency of a thermal control loop in which refrigerant after compression and condensation is applied to an evaporator (130) employs a subsidiary counter-current heat exchanger (126) intercepting refrigerant flow to maintain the quality of the refrigerant by exchanging thermal energy between the input flow and the output flow from the evaporator (130). The same principle is effective, with particular advantage when small connections have to be made, in systems using mixed phase media and using the concept of direct energy transfer with saturated fluid.
A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer zone heat exchangers coupled to respective inner and outer zones of said electrostatic chuck. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
H01L 21/306 - Traitement chimique ou électrique, p. ex. gravure électrolytique
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
C23C 16/52 - Commande ou régulation du processus de dépôt
16.
Method for agile workpiece temperature control in a plasma reactor using a thermal model
A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.
A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
18.
Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
H01L 21/3065 - Gravure par plasmaGravure au moyen d'ions réactifs
C23C 16/52 - Commande ou régulation du processus de dépôt
C23C 16/46 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour le chauffage du substrat
C23C 16/458 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour supporter les substrats dans la chambre de réaction
C23C 16/503 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à courant continu ou alternatif
C23C 16/509 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement au moyen de décharges électriques utilisant des décharges à radiofréquence utilisant des électrodes internes
brevets
