A method for preparing bis(methylcyclopentadienyl)nickel, according to one embodiment of the present invention, does not require preparation of an anhydrous solvent, and uses a cheap and safe alkali metal hydroxide, and thus has excellent process stability. Furthermore, bis(methylcyclopentadienyl)nickel prepared by the method has excellent yield and purity. In addition, a method for manufacturing a nickel oxide thin film, according one embodiment of the present invention, exhibits an economic effect of reducing process time through an improved deposition rate, and a nickel oxide thin film manufactured thereby has excellent physical properties, for example, excellent resistance and transparency, and thus is suitable for application to a hole transport layer of a perovskite solar cell.
C07F 17/02 - Metallocènes de métaux des groupes 8, 9 ou 10 du tableau périodique
C23C 16/455 - Revêtement chimique par décomposition de composés gazeux, ne laissant pas de produits de réaction du matériau de la surface dans le revêtement, c.-à-d. procédés de dépôt chimique en phase vapeur [CVD] caractérisé par le procédé de revêtement caractérisé par le procédé utilisé pour introduire des gaz dans la chambre de réaction ou pour modifier les écoulements de gaz dans la chambre de réaction
An etching gas and an etching method, the etching gas includes hydrogen gas; a halogen gas; a first gas; and a second gas, wherein the first gas includes a phosphorus atom, and the second gas includes a carbon atom and two or more halogen atoms that are different from each other.
The present invention relates to a method for purifying 6FDA with high purity. According to the present invention, the use of activated carbon and phosphoric acid together in the purification process makes it possible to remove heavy metal ion impurities contained in 6FDA in a single process while maintaining an excellent yield, thereby enabling the production of high-quality and high-purity 6FDA.
SAMSUNG ELECTRONICS CO., LTD. (République de Corée)
FOOSUNG CO.,LTD. (République de Corée)
Inventeur(s)
Hong, Hyeunwoong
Kwon, Woohyeop
Ahn, Hyeongeun
Jung, Wooin
Kang, Dongkyeong
Kim, Donghyun
Kim, Taeheon
Kim, Hyunjeong
Lee, Changsu
Jeon, Kangyeob
Moon, Jungheun
Moon, Chulhwan
Woo, Byungwon
Lee, Jungeun
Lee, Junhee
Lee, Taeseok
Jeong, Hyejeong
Hong, Kangsan
Joung, Soonkil
Abrégé
266) and hydrofluoric acid (HF), and a surface treatment method using same. The composition can be used for processing (for example, etching) of a substrate such as glass.
C03C 15/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par attaque chimique
C09K 13/04 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
C09K 13/02 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un hydroxyde d'un métal alcalin
5.
COMPOSITION FOR SURFACE TREATMENT AND SURFACE TREATMENT METHOD USING THE SAME
Samsung Electronics Co., Ltd. (République de Corée)
FOOSUNG CO., LTD. (République de Corée)
Inventeur(s)
Hong, Hyeunwoong
Kwon, Woohyeop
Ahn, Hyeongeun
Jung, Wooin
Kang, Dongkyeong
Kim, Donghyun
Kim, Taeheon
Kim, Hyunjeong
Lee, Changsu
Jeon, Kangyeob
Moon, Jungheun
Moon, Chulhwan
Woo, Byungwon
Lee, Jungeun
Lee, Junhee
Jeong, Hyejeong
Lee, Taeseok
Hong, Kangsan
Joung, Soonkil
Abrégé
A composition for surface treatment includes fluorosilicic acid (H2SiF6) and hydrofluoric acid (HF), and/or a surface treatment method using the same. The composition may be used to treat (e.g., etch) a substrate such as glass or the like.
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
C03C 15/00 - Traitement de surface du verre, autre que sous forme de fibres ou de filaments, par attaque chimique
6.
SILICON NITRIDE FILM ETCHING COMPOSITION AND PREPARATION METHOD THEREFOR
The present invention relates to a silicon nitride film etching composition and a preparation method therefor, and the silicon nitride film etching composition of the present invention may comprise phosphoric acid, hydrogen fluoride, silicate ions and water. The silicon nitride film etching composition of the present invention can provide the excellent effects of excellent etch selectivity, which is maintained as ∞, a high silicon nitride film etching rate and post-etching particle generation suppression.
C09K 13/06 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique avec une substance organique
C09K 13/08 - Compositions pour l'attaque chimique, la gravure, le brillantage de surface ou le décapage contenant un acide inorganique contenant un composé du fluor
According to an embodiment of the present inventive concept, an electrolyte additive represented by the compounds of Chemical Formulas 1 to 4 may be provided. In addition, according to another embodiment of the present inventive concept, a method for preparing an electrolyte additive of the compounds of Chemical Formulas 1 to 4 may be provided, wherein the method for preparing the electrolyte additive includes reacting hexafluorophosphate and 2-monofluoromalonic acid, further adding an HF scavenger to the mixed solution produced by the reaction, and concentrating and drying the reaction solution obtained therefrom.
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
H01M 10/0569 - Matériaux liquides caracterisés par les solvants
8.
SURFACE TREATMENT METHOD FOR CONTAINER FOR STORING HIGH-PURITY HYDROGEN FLUORIDE FOR SEMICONDUCTOR ETCHING
The present invention relates to a surface treatment method for the inside of a container for storing high-purity hydrogen fluoride, comprising: a cylinder pretreatment step for removing moisture inside a cylinder; and a fluorinated passive film formation step for forming a fluorinated passive film on the inner surface of the cylinder by means of anhydrous hydrofluoric acid. The present invention can provide: a surface treatment method which, even in the case of long-term storage of high-purity hydrogen fluoride, can minimize the amounts of impurity gases (hydrogen, oxygen, etc.) generated; and a container, surface-treated according to the method, for storing high-purity hydrogen fluoride.
F17C 1/10 - Récipients sous pression, p. ex. bouteilles de gaz, réservoirs de gaz, cartouches échangeables avec des moyens pour assurer une protection contre la corrosion, p. ex. due à un acide à l'état gazeux
9.
ELECTROLYTE ADDITIVE FOR SECONDARY BATTERY, PREPARATION METHOD THEREFOR, AND ELECTROLYTE COMPOSITION AND SECONDARY BATTERY, WHICH COMPRISE ADDITIVE
According to one embodiment of the present invention, provided is an electrolyte additive which is a compound represented by chemical formulas 1-4. In addition, according to another embodiment of the present invention, provided is an electrolyte additive preparation method for preparing the compound of chemical formulas 1-4, and the electrolyte additive preparation method can comprise the steps of: reacting a hexafluorophosphate and 2-monofluoromalonic acid; further adding an HF scavenger to a mixture solution produced by the reaction; and concentrating and drying the obtained reaction solution.
H01M 10/0567 - Matériaux liquides caracterisés par les additifs
H01M 4/525 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'oxydes ou d'hydroxydes inorganiques de nickel, de cobalt ou de fer d'oxydes ou d'hydroxydes mixtes contenant du fer, du cobalt ou du nickel pour insérer ou intercaler des métaux légers, p. ex. LiNiO2, LiCoO2 ou LiCoOxFy
H01M 4/587 - Matériau carboné, p. ex. composés au graphite d'intercalation ou CFx pour insérer ou intercaler des métaux légers
H01M 4/36 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs
H01M 4/38 - Emploi de substances spécifiées comme matériaux actifs, masses actives, liquides actifs d'éléments simples ou d'alliages
H01M 10/0525 - Batteries du type "rocking chair" ou "fauteuil à bascule", p. ex. batteries à insertion ou intercalation de lithium dans les deux électrodesBatteries à l'ion lithium
C07F 9/6568 - Composés hétérocycliques, p. ex. contenant du phosphore comme hétéro-atome du cycle comportant des atomes de phosphore, avec ou sans atomes d'azote, d'oxygène, de soufre, de sélénium ou de tellure, comme hétéro-atomes du cycle comportant des atomes de phosphore comme uniques hétéro-atomes du cycle
10.
METHOD FOR PRODUCING ALKALI METAL HEXAFLUOROPHOSPHATE, ALKALI METAL HEXAFLUOROPHOSPHATE, METHOD FOR PRODUCING ELECTROLYTE CONCENTRATE COMPRISING ALKALI METAL HEXAFLUOROPHOSPHATE, AND METHOD FOR PRODUCING SECONDARY BATTERY
Provided are method for producing alkali metal hexafluorophosphate, alkali metal hexafluorophosphate powder, method for producing electrolyte concentrate comprising alkali metal hexafluorophosphate, and method for producing secondary battery. The method for preparing alkali metal hexafluorophosphate includes a step of obtaining an alkali metal hexafluorophosphate by reacting phosphorus pentafluoride with alkali metal fluoride in a haloformate solvent.
Disclosed is a method of simultaneously preparing 1,1,1-trifluoro-2-chloropropene and 1,1,1,2-tetrafluoropropene, the method including i) a step of elevating a temperature of a reactor charged with a gas phase catalyst up to a reaction temperature; ii) a step of feeding 1,1,1-trifluoro-2,3-dichloropropane and 2-chloro-1,1,1,2-tetrafluoropropane into the reactor, the temperature of which has been elevated; iii) a step of performing dehydrochlorination while maintaining the temperature of the reactor; and iv) a step of performing washing and distillation after the dehydrochlorination. In accordance with the present disclosure, a high-efficient gas-phase process of continuously, simultaneously preparing 1,1,1-trifluoro-2-chloropropene and 1,1,1,2-tetrafluoropropene is provided.
B01J 8/10 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés avec des particules mobiles mues par des agitateurs ou par des tambours rotatifs ou par des récipients tournants
B01J 8/00 - Procédés chimiques ou physiques en général, conduits en présence de fluides et de particules solidesAppareillage pour de tels procédés
Disclosed herein is a method of preparing a perfluoroalkadiene. A dihaloperfluorocarbon used as a starting material is added dropwise to a nonpolar organic solvent, a metal powder and an organic metal compound. The dihaloperfluorocarbon is slowly added dropwise in a temperature range from 30° C. to 150° C. for a certain period of time. Moreover, the nonpolar organic solvent used may be benzene, toluene, xylene, etc., and the organic metal compound is used by being dissolved in ethyl ether or tetrahydrofuran at a concentration of 1 to 3M. The metal powder used may be Mg, Zn, Cd, etc.
8 in an amount of 99.995 vol % or higher, nitrogen in an amount of 50 vol ppm or less, oxygen in an amount of 5 vol ppm or less, water in an amount of 5 vol ppm or less, and metal ingredients in an amount of 5 wt ppb or less.
2 and HF, and then at 320-380° C. using HF gas. The fluorination catalyst prepared using the method of this invention can be effectively used to prepare pentafluoroethane at a high yield using a chloroethane compound.
3 by gas-liquid phase reaction of fluorine and ammonia in molten ammonium acid fluoride (AAF) in a static reactor in which the reactants are conveyed primarily by thermal conduction or siphon. Optimally, the reactor contains one or more static mixing elements with little, if any, mechanical agitation. Reactant flow rate and reaction temperature are regulated by the rate of introduction of ammonia and cooling, as necessary The ratio of hydrogen fluoride (generated by the reaction) to ammonia in the reactor is significantly lower than taught in the prior art. This allows a lower reaction temperature. The present invention is an improved synthetic method that offers enhanced selectivity and higher yields, improved control of reaction kinetics, reduced operational and energy costs, and a greater margin of safety.